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VI30120S-E3/4W VI30120S-E3/4W Vishay General Semiconductor - Diodes Division v30120s.pdf Description: DIODE SCHOTTKY 120V 30A TO262AA
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VI30120SG-E3/4W VI30120SG-E3/4W Vishay General Semiconductor - Diodes Division v30120sg.pdf Description: DIODE SCHOTTKY 120V 30A TO262AA
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VI30200C-E3/4W VI30200C-E3/4W Vishay General Semiconductor - Diodes Division v30200c.pdf Description: DIODE ARRAY SCHOTTKY 200V TO262
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V10P10-E3/87A V10P10-E3/87A Vishay General Semiconductor - Diodes Division V10P10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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V12P10-E3/87A V12P10-E3/87A Vishay General Semiconductor - Diodes Division V12P10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
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V8P10-E3/87A V8P10-E3/87A Vishay General Semiconductor - Diodes Division V8P10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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VB20100S-E3/8W VB20100S-E3/8W Vishay General Semiconductor - Diodes Division v20100s.pdf Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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VS-6CWQ06FNPBF VS-6CWQ06FNPBF Vishay General Semiconductor - Diodes Division VS-6CWQ06FNPbF.pdf Description: DIODE ARRAY SCHOTT 60V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
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VS-70TPS12PBF VS-70TPS12PBF Vishay General Semiconductor - Diodes Division Description: SCR 1.2KV 75A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A @ 50Hz
Current - On State (It (AV)) (Max): 70 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 1 mA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.2 kV
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VS-100MT160PAPBF VS-100MT160PAPBF Vishay General Semiconductor - Diodes Division 100MT140PA.pdf Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Bulk
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
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VS-8EWS10SPBF VS-8EWS10SPBF Vishay General Semiconductor - Diodes Division vs-8ewf12sm.pdf Description: DIODE STANDARD 1000V 8A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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VCUT0505B-HD1-GS08 VCUT0505B-HD1-GS08 Vishay General Semiconductor - Diodes Division vcut0505.pdf Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
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VESD03A1B-HD1-GS08 VESD03A1B-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd03a1.pdf Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
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VESD05A1A-HD1-GS08 VESD05A1A-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
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VESD05A1B-HD1-GS08 VESD05A1B-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
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VESD05A4A-HS4-GS08 VESD05A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division VESD05A4A-HS4.pdf Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
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VEMI65AB-HCI-GS08 VEMI65AB-HCI-GS08 Vishay General Semiconductor - Diodes Division vemi65ab.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
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VESD09A4A-HS4-GS08 VESD09A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division vesd09a4.pdf Description: TVS DIODE 9VWM 23VC LLP1010-5L
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VCUT0505B-HD1-GS08 VCUT0505B-HD1-GS08 Vishay General Semiconductor - Diodes Division vcut0505.pdf Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
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VESD03A1B-HD1-GS08 VESD03A1B-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd03a1.pdf Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
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VESD05A1A-HD1-GS08 VESD05A1A-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
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VESD05A1B-HD1-GS08 VESD05A1B-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
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VESD05A4A-HS4-GS08 VESD05A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division VESD05A4A-HS4.pdf Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
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VEMI65AB-HCI-GS08 VEMI65AB-HCI-GS08 Vishay General Semiconductor - Diodes Division vemi65ab.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
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VESD09A4A-HS4-GS08 VESD09A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division vesd09a4.pdf Description: TVS DIODE 9VWM 23VC LLP1010-5L
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VBUS054B-HSF-GS08 VBUS054B-HSF-GS08 Vishay General Semiconductor - Diodes Division vbus054b-hsf.pdf Description: TVS DIODE 5VWM 15VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: Yes
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VESD03A1C-02Z-GS08 VESD03A1C-02Z-GS08 Vishay General Semiconductor - Diodes Division VESD03A1C-02Z.pdf Description: TVS DIODE 3.3VWM 10VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
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BU10065S-E3/45 BU10065S-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU-5S
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BU1006A5S-E3/45 BU1006A5S-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU-5S
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BU1006A-E3/45 BU1006A-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BU1006A-E3/51 BU1006A-E3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BU1006-E3/45 BU1006-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1006-E3/51 BU1006-E3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BU1010A5S-E3/45 BU1010A5S-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU-5S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1010A-E3/45 BU1010A-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BU1010A-E3/51 BU1010A-E3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BU1010-E3/45 BU1010-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BU1010-E3/51 BU1010-E3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BU12065S-E3/45 BU12065S-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 3.4A BU-5S
Produkt ist nicht verfügbar
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BU1206-E3/45 BU1206-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 111 Stücke:
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4+5.43 EUR
10+3.31 EUR
100+2.43 EUR
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BU1206-E3/51 BU1206-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BU12085S-E3/45 BU12085S-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1208-E3/51 BU1208-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1PHASE 800V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BU15085S-E3/45 BU15085S-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1508-E3/45 BU1508-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.05 EUR
20+3.38 EUR
100+3.34 EUR
500+2.74 EUR
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BU1508-E3/51 BU1508-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BU1510-E3/51 BU1510-E3/51 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BU2006-E3/45 BU2006-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.95 EUR
10+5.36 EUR
100+4.31 EUR
500+3.53 EUR
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BU20085S-E3/45 BU20085S-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2008-E3/45 BU2008-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.15 EUR
10+8.15 EUR
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BU2008-E3/51 BU2008-E3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU20105S-E3/45 BU20105S-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2010-E3/45 BU2010-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.42 EUR
20+7.51 EUR
100+6.03 EUR
500+5.05 EUR
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BU2010-E3/51 BU2010-E3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.42 EUR
10+8.35 EUR
250+5.43 EUR
500+5.05 EUR
1000+4.72 EUR
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BU25065S-E3/45 BU25065S-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2506-E3/45 BU2506-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2506-E3/51 BU2506-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
10+5.38 EUR
250+3.39 EUR
500+3.14 EUR
Mindestbestellmenge: 3 Stücke
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BU25085S-E3/45 BU25085S-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2508-E3/45 BU2508-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.78 EUR
10+8.59 EUR
50+6.79 EUR
100+6.22 EUR
Mindestbestellmenge: 2 Stücke
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BU2508-E3/51 BU2508-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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VI30120S-E3/4W v30120s.pdf
VI30120S-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A TO262AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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VI30120SG-E3/4W v30120sg.pdf
VI30120SG-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A TO262AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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VI30200C-E3/4W v30200c.pdf
VI30200C-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 200V TO262
Produkt ist nicht verfügbar
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V10P10-E3/87A V10P10.pdf
V10P10-E3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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V12P10-E3/87A V12P10.pdf
V12P10-E3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Produkt ist nicht verfügbar
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V8P10-E3/87A V8P10.pdf
V8P10-E3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Produkt ist nicht verfügbar
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VB20100S-E3/8W v20100s.pdf
VB20100S-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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800+1.38 EUR
2400+1.23 EUR
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VS-6CWQ06FNPBF VS-6CWQ06FNPbF.pdf
VS-6CWQ06FNPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Produkt ist nicht verfügbar
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VS-70TPS12PBF
VS-70TPS12PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 75A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A @ 50Hz
Current - On State (It (AV)) (Max): 70 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 1 mA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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VS-100MT160PAPBF 100MT140PA.pdf
VS-100MT160PAPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Bulk
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
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VS-8EWS10SPBF vs-8ewf12sm.pdf
VS-8EWS10SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 8A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Produkt ist nicht verfügbar
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VCUT0505B-HD1-GS08 vcut0505.pdf
VCUT0505B-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
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8000+0.13 EUR
24000+0.12 EUR
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VESD03A1B-HD1-GS08 vesd03a1.pdf
VESD03A1B-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
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8000+0.11 EUR
24000+0.092 EUR
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VESD05A1A-HD1-GS08 vesd05a1.pdf
VESD05A1A-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
auf Bestellung 64000 Stücke:
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8000+0.13 EUR
24000+0.11 EUR
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VESD05A1B-HD1-GS08 vesd05a1.pdf
VESD05A1B-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
auf Bestellung 224000 Stücke:
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8000+0.11 EUR
24000+0.098 EUR
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VESD05A4A-HS4-GS08 VESD05A4A-HS4.pdf
VESD05A4A-HS4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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VEMI65AB-HCI-GS08 vemi65ab.pdf
VEMI65AB-HCI-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
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3000+0.4 EUR
6000+0.39 EUR
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VESD09A4A-HS4-GS08 vesd09a4.pdf
VESD09A4A-HS4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 23VC LLP1010-5L
Produkt ist nicht verfügbar
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VCUT0505B-HD1-GS08 vcut0505.pdf
VCUT0505B-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
auf Bestellung 153072 Stücke:
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32+0.67 EUR
50+0.42 EUR
70+0.3 EUR
100+0.26 EUR
500+0.19 EUR
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VESD03A1B-HD1-GS08 vesd03a1.pdf
VESD03A1B-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
auf Bestellung 365676 Stücke:
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36+0.58 EUR
58+0.36 EUR
81+0.26 EUR
100+0.23 EUR
500+0.17 EUR
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VESD05A1A-HD1-GS08 vesd05a1.pdf
VESD05A1A-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
auf Bestellung 71474 Stücke:
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30+0.71 EUR
49+0.44 EUR
68+0.31 EUR
100+0.27 EUR
500+0.2 EUR
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VESD05A1B-HD1-GS08 vesd05a1.pdf
VESD05A1B-HD1-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
auf Bestellung 237261 Stücke:
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36+0.58 EUR
58+0.36 EUR
81+0.26 EUR
100+0.23 EUR
500+0.17 EUR
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VESD05A4A-HS4-GS08 VESD05A4A-HS4.pdf
VESD05A4A-HS4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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VEMI65AB-HCI-GS08 vemi65ab.pdf
VEMI65AB-HCI-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
auf Bestellung 8669 Stücke:
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23+0.94 EUR
33+0.65 EUR
36+0.58 EUR
100+0.51 EUR
250+0.46 EUR
500+0.45 EUR
1000+0.43 EUR
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VESD09A4A-HS4-GS08 vesd09a4.pdf
VESD09A4A-HS4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 23VC LLP1010-5L
Produkt ist nicht verfügbar
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VBUS054B-HSF-GS08 vbus054b-hsf.pdf
VBUS054B-HSF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 15VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: Yes
auf Bestellung 27788 Stücke:
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24+0.9 EUR
34+0.62 EUR
100+0.51 EUR
500+0.49 EUR
1000+0.46 EUR
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VESD03A1C-02Z-GS08 VESD03A1C-02Z.pdf
VESD03A1C-02Z-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 10VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
Produkt ist nicht verfügbar
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BU10065S-E3/45 bu1006.pdf
BU10065S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
Produkt ist nicht verfügbar
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BU1006A5S-E3/45 bu1006a.pdf
BU1006A5S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU-5S
Produkt ist nicht verfügbar
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BU1006A-E3/45 bu1006a.pdf
BU1006A-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BU1006A-E3/51 bu1006a.pdf
BU1006A-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BU1006-E3/45 bu1006.pdf
BU1006-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BU1006-E3/51 bu1006.pdf
BU1006-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BU1010A5S-E3/45 bu1006a.pdf
BU1010A5S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU-5S
Produkt ist nicht verfügbar
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BU1010A-E3/45 bu1006a.pdf
BU1010A-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BU1010A-E3/51 bu1006a.pdf
BU1010A-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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BU1010-E3/45 bu1006.pdf
BU1010-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BU1010-E3/51 bu1006.pdf
BU1010-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BU12065S-E3/45 bu1206.pdf
BU12065S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BU1206-E3/45 bu1206.pdf
BU1206-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+3.31 EUR
100+2.43 EUR
Mindestbestellmenge: 4 Stücke
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BU1206-E3/51 bu1206.pdf
BU1206-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BU12085S-E3/45 bu1206.pdf
BU12085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1208-E3/51 bu1206.pdf
BU1208-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU15085S-E3/45 bu1506.pdf
BU15085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1508-E3/45 bu1506.pdf
BU1508-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
20+3.38 EUR
100+3.34 EUR
500+2.74 EUR
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BU1508-E3/51 bu1206.pdf
BU1508-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1510-E3/51 bu1506.pdf
BU1510-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU2006-E3/45 bu2006.pdf
BU2006-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+5.36 EUR
100+4.31 EUR
500+3.53 EUR
Mindestbestellmenge: 4 Stücke
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BU20085S-E3/45 bu2006.pdf
BU20085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2008-E3/45 bu2006.pdf
BU2008-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.15 EUR
10+8.15 EUR
Mindestbestellmenge: 2 Stücke
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BU2008-E3/51 bu2006.pdf
BU2008-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU20105S-E3/45 bu2006.pdf
BU20105S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2010-E3/45 bu2006.pdf
BU2010-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.42 EUR
20+7.51 EUR
100+6.03 EUR
500+5.05 EUR
Mindestbestellmenge: 2 Stücke
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BU2010-E3/51 bu2006.pdf
BU2010-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.42 EUR
10+8.35 EUR
250+5.43 EUR
500+5.05 EUR
1000+4.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU25065S-E3/45 bu2506.pdf
BU25065S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2506-E3/45 bu2506.pdf
BU2506-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2506-E3/51 bu2506.pdf
BU2506-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.13 EUR
10+5.38 EUR
250+3.39 EUR
500+3.14 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU25085S-E3/45 bu2506.pdf
BU25085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2508-E3/45 bu2506.pdf
BU2508-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.78 EUR
10+8.59 EUR
50+6.79 EUR
100+6.22 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU2508-E3/51 bu2506.pdf
BU2508-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH