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BU10065S-E3/45 BU10065S-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU-5S
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BU1006A5S-E3/45 BU1006A5S-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU-5S
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BU1006A-E3/45 BU1006A-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
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BU1006A-E3/51 BU1006A-E3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
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BU1006-E3/45 BU1006-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
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BU1006-E3/51 BU1006-E3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
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BU1010A5S-E3/45 BU1010A5S-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU-5S
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BU1010A-E3/45 BU1010A-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
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BU1010A-E3/51 BU1010A-E3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Produkt ist nicht verfügbar
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BU1010-E3/45 BU1010-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
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BU1010-E3/51 BU1010-E3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 3.2A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
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BU12065S-E3/45 BU12065S-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 3.4A BU-5S
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BU1206-E3/45 BU1206-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
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4+5.43 EUR
10+3.31 EUR
100+2.43 EUR
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BU1206-E3/51 BU1206-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
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BU12085S-E3/45 BU12085S-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU-5S
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BU1208-E3/51 BU1208-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1PHASE 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
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BU15085S-E3/45 BU15085S-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Produkt ist nicht verfügbar
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BU1508-E3/45 BU1508-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
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20+3.38 EUR
100+3.34 EUR
500+2.74 EUR
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BU1508-E3/51 BU1508-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
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BU1510-E3/51 BU1510-E3/51 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
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BU2006-E3/45 BU2006-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-SIP, BU
Packaging: Bulk
Mounting Type: Through Hole
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10+5.36 EUR
100+4.31 EUR
500+3.53 EUR
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BU20085S-E3/45 BU20085S-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Voltage - Peak Reverse (Max): 800 V
Produkt ist nicht verfügbar
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BU2008-E3/45 BU2008-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 49 Stücke:
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BU2008-E3/51 BU2008-E3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BU20105S-E3/45 BU20105S-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Produkt ist nicht verfügbar
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BU2010-E3/45 BU2010-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 618 Stücke:
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BU2010-E3/51 BU2010-E3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BU25065S-E3/45 BU25065S-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Produkt ist nicht verfügbar
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BU2506-E3/45 BU2506-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BU2506-E3/51 BU2506-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 990 Stücke:
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3+8.13 EUR
10+5.38 EUR
250+3.39 EUR
500+3.14 EUR
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BU25085S-E3/45 BU25085S-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Produkt ist nicht verfügbar
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BU2508-E3/45 BU2508-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
auf Bestellung 241 Stücke:
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3+8.84 EUR
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BU2508-E3/51 BU2508-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BU2510-E3/45 BU2510-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
auf Bestellung 800 Stücke:
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4+5.87 EUR
10+5.26 EUR
100+4.31 EUR
500+3.67 EUR
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BU2510-E3/51 BU2510-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU
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GL41T-E3/1 GL41T-E3/1 Vishay General Semiconductor - Diodes Division BYM10-50%20-%2010-1000%2C%20GL41A-Y_Rev30.pdf Description: DIODE STANDARD 1300V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
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VS-100BGQ100 VS-100BGQ100 Vishay General Semiconductor - Diodes Division 100BGQ100.pdf Description: DIODE SCHOTTK 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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SS10P4-M3/86A SS10P4-M3/86A Vishay General Semiconductor - Diodes Division ss10p4.pdf Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
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SS3P4L-M3/86A SS3P4L-M3/86A Vishay General Semiconductor - Diodes Division ss3p4l.pdf Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
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SS3P6L-M3/86A SS3P6L-M3/86A Vishay General Semiconductor - Diodes Division ss3p6l.pdf Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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SS5P10-M3/86A SS5P10-M3/86A Vishay General Semiconductor - Diodes Division ss5p10.pdf Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
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SS5P3-M3/86A SS5P3-M3/86A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 30V 5A TO277A
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SS5P6-M3/86A SS5P6-M3/86A Vishay General Semiconductor - Diodes Division ss5p6.pdf Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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SS8P2L-M3/86A SS8P2L-M3/86A Vishay General Semiconductor - Diodes Division ss8p3l.pdf Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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SS8P3L-M3/86A SS8P3L-M3/86A Vishay General Semiconductor - Diodes Division ss8p3l.pdf Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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SS8PH10-M3/86A SS8PH10-M3/86A Vishay General Semiconductor - Diodes Division ss8ph10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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V10P10-M3/86A V10P10-M3/86A Vishay General Semiconductor - Diodes Division v10p10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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V12P10-M3/86A V12P10-M3/86A Vishay General Semiconductor - Diodes Division v12p10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
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V30100S-E3/4W V30100S-E3/4W Vishay General Semiconductor - Diodes Division v30100s.pdf Description: DIODE SCHOTTKY 100V 30A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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100+1.99 EUR
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V60100C-E3/4W V60100C-E3/4W Vishay General Semiconductor - Diodes Division V(B)60100C.pdf Description: DIODE ARR SCHOT 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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VF30100S-E3/4W VF30100S-E3/4W Vishay General Semiconductor - Diodes Division v30100s.pdf Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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VF30100SG-E3/4W VF30100SG-E3/4W Vishay General Semiconductor - Diodes Division v30100sg.pdf Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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VF40100C-E3/4W VF40100C-E3/4W Vishay General Semiconductor - Diodes Division v40100c.pdf Description: DIODE ARR SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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SS10P4-M3/86A SS10P4-M3/86A Vishay General Semiconductor - Diodes Division ss10p4.pdf Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
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SS3P4L-M3/86A SS3P4L-M3/86A Vishay General Semiconductor - Diodes Division ss3p4l.pdf Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
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SS3P6L-M3/86A SS3P6L-M3/86A Vishay General Semiconductor - Diodes Division ss3p6l.pdf Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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SS5P10-M3/86A SS5P10-M3/86A Vishay General Semiconductor - Diodes Division ss5p10.pdf Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
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SS5P3-M3/86A SS5P3-M3/86A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 30V 5A TO277A
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SS5P6-M3/86A SS5P6-M3/86A Vishay General Semiconductor - Diodes Division ss5p6.pdf Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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SS8P2L-M3/86A SS8P2L-M3/86A Vishay General Semiconductor - Diodes Division ss8p3l.pdf Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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BU10065S-E3/45 bu1006.pdf
BU10065S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
Produkt ist nicht verfügbar
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BU1006A5S-E3/45 bu1006a.pdf
BU1006A5S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU-5S
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BU1006A-E3/45 bu1006a.pdf
BU1006A-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BU1006A-E3/51 bu1006a.pdf
BU1006A-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BU1006-E3/45 bu1006.pdf
BU1006-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1006-E3/51 bu1006.pdf
BU1006-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1010A5S-E3/45 bu1006a.pdf
BU1010A5S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU-5S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1010A-E3/45 bu1006a.pdf
BU1010A-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1010A-E3/51 bu1006a.pdf
BU1010A-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1010-E3/45 bu1006.pdf
BU1010-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1010-E3/51 bu1006.pdf
BU1010-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU12065S-E3/45 bu1206.pdf
BU12065S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1206-E3/45 bu1206.pdf
BU1206-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+3.31 EUR
100+2.43 EUR
Mindestbestellmenge: 4 Stücke
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BU1206-E3/51 bu1206.pdf
BU1206-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU12085S-E3/45 bu1206.pdf
BU12085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1208-E3/51 bu1206.pdf
BU1208-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU15085S-E3/45 bu1506.pdf
BU15085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU1508-E3/45 bu1506.pdf
BU1508-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
20+3.38 EUR
100+3.34 EUR
500+2.74 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1508-E3/51 bu1206.pdf
BU1508-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU1510-E3/51 bu1506.pdf
BU1510-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU2006-E3/45 bu2006.pdf
BU2006-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-SIP, BU
Packaging: Bulk
Mounting Type: Through Hole
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+5.36 EUR
100+4.31 EUR
500+3.53 EUR
Mindestbestellmenge: 4 Stücke
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BU20085S-E3/45 bu2006.pdf
BU20085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Voltage - Peak Reverse (Max): 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2008-E3/45 bu2006.pdf
BU2008-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.4 EUR
10+8.33 EUR
Mindestbestellmenge: 2 Stücke
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BU2008-E3/51 bu2006.pdf
BU2008-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU20105S-E3/45 bu2006.pdf
BU20105S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2010-E3/45 bu2006.pdf
BU2010-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.42 EUR
20+7.51 EUR
100+6.03 EUR
500+5.05 EUR
Mindestbestellmenge: 2 Stücke
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BU2010-E3/51 bu2006.pdf
BU2010-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.42 EUR
10+8.35 EUR
250+5.43 EUR
500+5.05 EUR
1000+4.72 EUR
Mindestbestellmenge: 2 Stücke
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BU25065S-E3/45 bu2506.pdf
BU25065S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2506-E3/45 bu2506.pdf
BU2506-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2506-E3/51 bu2506.pdf
BU2506-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.13 EUR
10+5.38 EUR
250+3.39 EUR
500+3.14 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU25085S-E3/45 bu2506.pdf
BU25085S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BU2508-E3/45 bu2506.pdf
BU2508-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.84 EUR
10+4.76 EUR
100+3.7 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU2508-E3/51 bu2506.pdf
BU2508-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU2510-E3/45 bu2506.pdf
BU2510-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.87 EUR
10+5.26 EUR
100+4.31 EUR
500+3.67 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU2510-E3/51 bu2506.pdf
BU2510-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GL41T-E3/1 BYM10-50%20-%2010-1000%2C%20GL41A-Y_Rev30.pdf
GL41T-E3/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
Produkt ist nicht verfügbar
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VS-100BGQ100 100BGQ100.pdf
VS-100BGQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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SS10P4-M3/86A ss10p4.pdf
SS10P4-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
auf Bestellung 28500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.73 EUR
3000+0.67 EUR
4500+0.64 EUR
7500+0.61 EUR
10500+0.58 EUR
15000+0.57 EUR
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SS3P4L-M3/86A ss3p4l.pdf
SS3P4L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Produkt ist nicht verfügbar
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SS3P6L-M3/86A ss3p6l.pdf
SS3P6L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.44 EUR
4500+0.38 EUR
Mindestbestellmenge: 1500 Stücke
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SS5P10-M3/86A ss5p10.pdf
SS5P10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.48 EUR
4500+0.42 EUR
Mindestbestellmenge: 1500 Stücke
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SS5P3-M3/86A ss5p4.pdf
SS5P3-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A TO277A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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SS5P6-M3/86A ss5p6.pdf
SS5P6-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.44 EUR
4500+0.38 EUR
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SS8P2L-M3/86A ss8p3l.pdf
SS8P2L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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SS8P3L-M3/86A ss8p3l.pdf
SS8P3L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.46 EUR
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SS8PH10-M3/86A ss8ph10.pdf
SS8PH10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 49500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.5 EUR
3000+0.45 EUR
4500+0.43 EUR
7500+0.4 EUR
10500+0.39 EUR
15000+0.38 EUR
Mindestbestellmenge: 1500 Stücke
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V10P10-M3/86A v10p10.pdf
V10P10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.69 EUR
3000+0.64 EUR
4500+0.61 EUR
7500+0.58 EUR
10500+0.56 EUR
15000+0.54 EUR
Mindestbestellmenge: 1500 Stücke
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V12P10-M3/86A v12p10.pdf
V12P10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
auf Bestellung 36500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.81 EUR
3000+0.75 EUR
4500+0.71 EUR
7500+0.68 EUR
10500+0.65 EUR
15000+0.63 EUR
Mindestbestellmenge: 1500 Stücke
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V30100S-E3/4W v30100s.pdf
V30100S-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 26008 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.55 EUR
10+2.92 EUR
50+2.21 EUR
100+1.99 EUR
500+1.58 EUR
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V60100C-E3/4W V(B)60100C.pdf
V60100C-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
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4+5.53 EUR
10+4.59 EUR
100+3.65 EUR
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VF30100S-E3/4W v30100s.pdf
VF30100S-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
50+1.62 EUR
100+1.33 EUR
500+1.2 EUR
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VF30100SG-E3/4W v30100sg.pdf
VF30100SG-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.76 EUR
50+2.21 EUR
100+1.75 EUR
500+1.49 EUR
1000+1.21 EUR
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VF40100C-E3/4W v40100c.pdf
VF40100C-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.61 EUR
10+3.82 EUR
100+3.05 EUR
500+2.57 EUR
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SS10P4-M3/86A ss10p4.pdf
SS10P4-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
auf Bestellung 28806 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.63 EUR
100+1.08 EUR
500+0.84 EUR
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SS3P4L-M3/86A ss3p4l.pdf
SS3P4L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
auf Bestellung 2 Stücke:
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SS3P6L-M3/86A ss3p6l.pdf
SS3P6L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 11044 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
21+1.04 EUR
50+0.76 EUR
100+0.67 EUR
500+0.51 EUR
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SS5P10-M3/86A ss5p10.pdf
SS5P10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
auf Bestellung 48344 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.12 EUR
50+0.82 EUR
100+0.73 EUR
500+0.56 EUR
Mindestbestellmenge: 12 Stücke
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SS5P3-M3/86A ss5p4.pdf
SS5P3-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A TO277A
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
19+1.11 EUR
100+0.83 EUR
500+0.65 EUR
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SS5P6-M3/86A ss5p6.pdf
SS5P6-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 14548 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
21+1.04 EUR
50+0.76 EUR
100+0.67 EUR
500+0.51 EUR
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SS8P2L-M3/86A ss8p3l.pdf
SS8P2L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
19+1.17 EUR
50+0.86 EUR
100+0.75 EUR
Mindestbestellmenge: 12 Stücke
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