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SMBJ160CA58HE3_A/I SMBJ160CA58HE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Bidirectional Channels: 1
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Produkt ist nicht verfügbar
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SMBJ160CAHM3/H SMBJ160CAHM3/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160CAHE3_A/I SMBJ160CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160CA58HE3/5B SMBJ160CA58HE3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Produkt ist nicht verfügbar
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NSB8MTHE3_B/I NSB8MTHE3_B/I Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 1KV 8A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NSB8MTHE3_B/P NSB8MTHE3_B/P Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 1KV 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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SMA6F6.0A-M3/6A SMA6F6.0A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 6VWM 13.7VC DO221AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4000W (4kW)
Voltage - Clamping (Max) @ Ipp: 13.7V
Voltage - Breakdown (Min): 6.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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SMA6F6.0A-M3/6A SMA6F6.0A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 6VWM 13.7VC DO221AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4000W (4kW)
Voltage - Clamping (Max) @ Ipp: 13.7V
Voltage - Breakdown (Min): 6.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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DZ23C3V3-G3-08 DZ23C3V3-G3-08 Vishay General Semiconductor - Diodes Division dz23-g_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DZ23C3V3-G3-08 DZ23C3V3-G3-08 Vishay General Semiconductor - Diodes Division dz23-g_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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VS-16EDH02-M3/I VS-16EDH02-M3/I Vishay General Semiconductor - Diodes Division vs-16edh02-m3.pdf Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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VS-16EDH02-M3/I VS-16EDH02-M3/I Vishay General Semiconductor - Diodes Division vs-16edh02-m3.pdf Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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VS-25FR80 VS-25FR80 Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE STD REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
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VS-25FR20 VS-25FR20 Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE STD REV 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
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VS-25FR80M VS-25FR80M Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE STD REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
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VS-25F80M VS-25F80M Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE STANDARD 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
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VS-3C10ET07T-M3 VS-3C10ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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VS-3C04ET07T-M3 VS-3C04ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
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VS-3C08ET07T-M3 VS-3C08ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
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VS-3C16ET07T-M3 VS-3C16ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
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VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
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VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
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VS-3C06ET07T-M3 VS-3C06ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
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VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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VS-3C12ET07T-M3 VS-3C12ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1500 Stücke:
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500+7.57 EUR
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VS-3C20ET07T-M3 VS-3C20ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 996 Stücke:
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VS-3C20ET07S2L-M3 VS-3C20ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C20ET07S2L-M3 VS-3C20ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 663 Stücke:
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VS-3C06ET07S2L-M3 VS-3C06ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
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VS-3C06ET07S2L-M3 VS-3C06ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 1598 Stücke:
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4+6.64 EUR
10+5.96 EUR
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VS-3C04ET07S2L-M3 VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
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800+3.46 EUR
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VS-3C04ET07S2L-M3 VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1600 Stücke:
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VS-3C16ET07S2L-M3 VS-3C16ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
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800+10.39 EUR
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VS-3C16ET07S2L-M3 VS-3C16ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
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2+15.43 EUR
10+13.93 EUR
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VS-3C08ET07S2L-M3 VS-3C08ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1600 Stücke:
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800+3.51 EUR
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VS-3C08ET07S2L-M3 VS-3C08ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 2376 Stücke:
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3+7.66 EUR
10+6.44 EUR
100+5.21 EUR
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XLD8A24CAHM3/I XLD8A24CAHM3/I Vishay General Semiconductor - Diodes Division xld8a24ca.pdf Description: TVS DIODE 24VWM 26VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 11000W (11kW)
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 180A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
auf Bestellung 750 Stücke:
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750+2.92 EUR
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XLD8A24CAHM3/I XLD8A24CAHM3/I Vishay General Semiconductor - Diodes Division xld8a24ca.pdf Description: TVS DIODE 24VWM 26VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 11000W (11kW)
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 180A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
auf Bestellung 1304 Stücke:
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3+7.14 EUR
10+4.84 EUR
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SMCJ18CAHM3/H SMCJ18CAHM3/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 51.4A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5242C-HE3-08 MMSZ5242C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 12V 500MW SOD123
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 30 Ohms
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MMSZ5242C-HE3-08 MMSZ5242C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 12V 500MW SOD123
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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AR1PK-M3/84A AR1PK-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 800V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.24 EUR
6000+0.23 EUR
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AR1PK-M3/84A AR1PK-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 800V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 7724 Stücke:
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20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
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AR1FK-M3/H AR1FK-M3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 800V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
15000+0.13 EUR
21000+0.12 EUR
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AU1FK-M3/H AU1FK-M3/H Vishay General Semiconductor - Diodes Division au1fd-au1fm.pdf Description: DIODE AVALANCHE 800V 1A DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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PLZ3V9B-HG3_A/H PLZ3V9B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.03 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
4500+0.13 EUR
9000+0.11 EUR
13500+0.093 EUR
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PLZ3V9B-HG3_A/H PLZ3V9B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 4.03 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
auf Bestellung 20702 Stücke:
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29+0.74 EUR
36+0.6 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.13 EUR
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PLZ3V0B-HG3_A/H PLZ3V0B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.12V 960MW DO219AC
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.37%
Packaging: Tape & Reel (TR)
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PLZ3V0B-HG3_A/H PLZ3V0B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.12V 960MW DO219AC
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.37%
Packaging: Cut Tape (CT)
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PLZ27B-HG3_A/H PLZ27B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 25.62V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 25.62 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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PLZ27B-HG3_A/H PLZ27B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 25.62V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 25.62 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ12B-HG3_A/H PLZ12B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 12V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Qualification: AEC-Q101
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PLZ12B-HG3_A/H PLZ12B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 12V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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MMSZ5229C-E3-08 MMSZ5229C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMSZ5229C-E3-08 MMSZ5229C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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PLZ4V3B-HG3_A/H PLZ4V3B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 4.3V 960MW DO219AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.02%
Packaging: Tape & Reel (TR)
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PLZ4V3B-HG3_A/H PLZ4V3B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 4.3V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.02%
Packaging: Cut Tape (CT)
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TLZ4V3B-GS08 TLZ4V3B-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 4.3V 500MW SOD80
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
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TLZ4V3B-GS08 TLZ4V3B-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 4.3V 500MW SOD80
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
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SMBJ160CA58HE3_A/I smbj.pdf
SMBJ160CA58HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Bidirectional Channels: 1
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Produkt ist nicht verfügbar
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SMBJ160CAHM3/H smbj.pdf
SMBJ160CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160CAHE3_A/I smbj.pdf
SMBJ160CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ160CA58HE3/5B smbj.pdf
SMBJ160CA58HE3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 259V
Voltage - Breakdown (Min): 178V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 160V
Current - Peak Pulse (10/1000µs): 2.3A
Produkt ist nicht verfügbar
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NSB8MTHE3_B/I ns8xt.pdf
NSB8MTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NSB8MTHE3_B/P ns8xt.pdf
NSB8MTHE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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7+3.08 EUR
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SMA6F6.0A-M3/6A sma6f5.pdf
SMA6F6.0A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 13.7VC DO221AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4000W (4kW)
Voltage - Clamping (Max) @ Ipp: 13.7V
Voltage - Breakdown (Min): 6.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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SMA6F6.0A-M3/6A sma6f5.pdf
SMA6F6.0A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 13.7VC DO221AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4000W (4kW)
Voltage - Clamping (Max) @ Ipp: 13.7V
Voltage - Breakdown (Min): 6.7V
Unidirectional Channels: 1
Supplier Device Package: DO-221AC (SlimSMA)
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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DZ23C3V3-G3-08 dz23-g_series.pdf
DZ23C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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DZ23C3V3-G3-08 dz23-g_series.pdf
DZ23C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
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VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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VS-25FR80 vs-25frseries.pdf
VS-25FR80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
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VS-25FR20 vs-25frseries.pdf
VS-25FR20
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
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VS-25FR80M vs-25frseries.pdf
VS-25FR80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 97 Stücke:
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2+20.72 EUR
10+14.39 EUR
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VS-25F80M vs-25frseries.pdf
VS-25F80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.72 EUR
10+14.39 EUR
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VS-3C10ET07T-M3 vs-3c10et07t-m3.pdf
VS-3C10ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 3047 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.92 EUR
10+8.91 EUR
100+7.29 EUR
500+6.21 EUR
1000+5.45 EUR
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VS-3C04ET07T-M3 vs-3c04et07t-m3.pdf
VS-3C04ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.49 EUR
50+3.61 EUR
100+2.96 EUR
500+2.51 EUR
1000+2.13 EUR
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VS-3C08ET07T-M3 vs-3c08et07t-m3.pdf
VS-3C08ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1934 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
50+3.97 EUR
100+3.4 EUR
500+3.33 EUR
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VS-3C16ET07T-M3 vs-3c16et07t-m3.pdf
VS-3C16ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.89 EUR
10+13.46 EUR
100+11.14 EUR
500+9.7 EUR
1000+9.12 EUR
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VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+8.18 EUR
Mindestbestellmenge: 800 Stücke
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VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1557 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.7 EUR
10+11.39 EUR
100+9.33 EUR
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VS-3C06ET07T-M3 vs-3c06et07t-m3.pdf
VS-3C06ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
50+4.3 EUR
100+3.68 EUR
500+3.27 EUR
1000+2.8 EUR
2000+2.64 EUR
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VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+6.58 EUR
1600+5.77 EUR
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VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.52 EUR
10+9.44 EUR
100+7.74 EUR
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VS-3C12ET07T-M3 vs-3c12et07t-m3.pdf
VS-3C12ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.09 EUR
10+10.85 EUR
100+8.89 EUR
500+7.57 EUR
1000+6.64 EUR
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VS-3C20ET07T-M3 vs-3c20et07t-m3.pdf
VS-3C20ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.9 EUR
10+17.98 EUR
100+14.89 EUR
500+13.02 EUR
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VS-3C20ET07S2L-M3 vs-3c20et07s2l-m3.pdf
VS-3C20ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C20ET07S2L-M3 vs-3c20et07s2l-m3.pdf
VS-3C20ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.87 EUR
10+17.97 EUR
100+14.88 EUR
Mindestbestellmenge: 2 Stücke
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VS-3C06ET07S2L-M3 vs-3c06et07s2l-m3.pdf
VS-3C06ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+4.28 EUR
Mindestbestellmenge: 800 Stücke
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VS-3C06ET07S2L-M3 vs-3c06et07s2l-m3.pdf
VS-3C06ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.64 EUR
10+5.96 EUR
100+4.88 EUR
Mindestbestellmenge: 4 Stücke
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VS-3C04ET07S2L-M3 vs-3c04et07s2l-m3.pdf
VS-3C04ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.46 EUR
Mindestbestellmenge: 800 Stücke
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VS-3C04ET07S2L-M3 vs-3c04et07s2l-m3.pdf
VS-3C04ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.68 EUR
10+5.09 EUR
100+4.09 EUR
Mindestbestellmenge: 4 Stücke
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VS-3C16ET07S2L-M3 vs-3c16et07s2l-m3.pdf
VS-3C16ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+10.39 EUR
Mindestbestellmenge: 800 Stücke
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VS-3C16ET07S2L-M3 vs-3c16et07s2l-m3.pdf
VS-3C16ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.43 EUR
10+13.93 EUR
100+11.54 EUR
Mindestbestellmenge: 2 Stücke
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VS-3C08ET07S2L-M3 vs-3c08et07s2l-m3.pdf
VS-3C08ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.51 EUR
Mindestbestellmenge: 800 Stücke
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VS-3C08ET07S2L-M3 vs-3c08et07s2l-m3.pdf
VS-3C08ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 2376 Stücke:
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3+7.66 EUR
10+6.44 EUR
100+5.21 EUR
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XLD8A24CAHM3/I xld8a24ca.pdf
XLD8A24CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 26VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 11000W (11kW)
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 180A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
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750+2.92 EUR
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XLD8A24CAHM3/I xld8a24ca.pdf
XLD8A24CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 26VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 11000W (11kW)
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 180A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
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3+7.14 EUR
10+4.84 EUR
100+3.65 EUR
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SMCJ18CAHM3/H smcj.pdf
SMCJ18CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 51.4A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5242C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5242C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 30 Ohms
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MMSZ5242C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5242C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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AR1PK-M3/84A ar1pm.pdf
AR1PK-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.24 EUR
6000+0.23 EUR
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AR1PK-M3/84A ar1pm.pdf
AR1PK-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 7724 Stücke:
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20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
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AR1FK-M3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
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AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
15000+0.13 EUR
21000+0.12 EUR
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AU1FK-M3/H au1fd-au1fm.pdf
AU1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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AnzahlPrivatkunde
3000+0.12 EUR
6000+0.12 EUR
9000+0.11 EUR
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PLZ3V9B-HG3_A/H plzseries.pdf
PLZ3V9B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.03 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 18000 Stücke:
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4500+0.13 EUR
9000+0.11 EUR
13500+0.093 EUR
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PLZ3V9B-HG3_A/H plzseries.pdf
PLZ3V9B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 4.03 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
auf Bestellung 20702 Stücke:
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29+0.74 EUR
36+0.6 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.13 EUR
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PLZ3V0B-HG3_A/H plzseries.pdf
PLZ3V0B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.12V 960MW DO219AC
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.37%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ3V0B-HG3_A/H plzseries.pdf
PLZ3V0B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.12V 960MW DO219AC
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 3.12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.37%
Packaging: Cut Tape (CT)
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PLZ27B-HG3_A/H plzseries.pdf
PLZ27B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25.62V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 25.62 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ27B-HG3_A/H plzseries.pdf
PLZ27B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25.62V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 25.62 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ12B-HG3_A/H plzseries.pdf
PLZ12B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
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4500+0.06 EUR
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PLZ12B-HG3_A/H plzseries.pdf
PLZ12B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 15545 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
90+0.24 EUR
212+0.099 EUR
500+0.09 EUR
1000+0.077 EUR
2000+0.073 EUR
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MMSZ5229C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5229C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.18 EUR
6000+0.17 EUR
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MMSZ5229C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5229C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 7966 Stücke:
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AnzahlPrivatkunde
26+0.82 EUR
42+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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PLZ4V3B-HG3_A/H plzseries.pdf
PLZ4V3B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 960MW DO219AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.02%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ4V3B-HG3_A/H plzseries.pdf
PLZ4V3B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3.02%
Packaging: Cut Tape (CT)
auf Bestellung 50 Stücke:
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AnzahlPrivatkunde
32+0.67 EUR
46+0.46 EUR
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TLZ4V3B-GS08 tlz.pdf
TLZ4V3B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD80
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLZ4V3B-GS08 tlz.pdf
TLZ4V3B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD80
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
auf Bestellung 367 Stücke:
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AnzahlPrivatkunde
44+0.48 EUR
65+0.32 EUR
131+0.15 EUR
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