| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRF9530SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 441 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9540PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of channel: enhancement Gate charge: 61nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1298 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9540SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9610PBF | VISHAY |
IRF9610PBF THT P channel transistors |
auf Bestellung 334 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9620PBF | VISHAY |
IRF9620PBF THT P channel transistors |
auf Bestellung 697 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9630PBF | VISHAY |
IRF9630PBF THT P channel transistors |
auf Bestellung 334 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9630SPBF | VISHAY |
IRF9630SPBF SMD P channel transistors |
auf Bestellung 330 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9Z24PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement Gate charge: 19nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 404 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9Z24SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9Z34PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Pulsed drain current: -72A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9Z34SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Pulsed drain current: -72A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 941 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB11N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 440 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB17N50LPBF | VISHAY |
IRFB17N50LPBF THT N channel transistors |
auf Bestellung 236 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB9N60APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 883 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC20PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 8A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 748 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBE20PBF | VISHAY |
IRFBE20PBF THT N channel transistors |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBE30PBF | VISHAY |
IRFBE30PBF THT N channel transistors |
auf Bestellung 624 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBE30SPBF | VISHAY |
IRFBE30SPBF SMD N channel transistors |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBF20SPBF | VISHAY |
IRFBF20SPBF SMD N channel transistors |
auf Bestellung 925 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBF30PBF | VISHAY |
IRFBF30 THT N channel transistors |
auf Bestellung 739 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBG20PBF | VISHAY |
IRFBG20PBF THT N channel transistors |
auf Bestellung 159 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9020PBF | VISHAY |
IRFD9020PBF THT P channel transistors |
auf Bestellung 244 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9110PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.49A Power dissipation: 1.3W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 8.7nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 426 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9210PBF | VISHAY |
IRFD9210PBF THT P channel transistors |
auf Bestellung 2075 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9220PBF | VISHAY |
IRFD9220PBF THT P channel transistors |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI510GPBF | VISHAY |
IRFI510GPBF THT N channel transistors |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI540GPBF | VISHAY |
IRFI540GPBF THT N channel transistors |
auf Bestellung 908 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI630GPBF | VISHAY |
IRFI630GPBF THT N channel transistors |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI644GPBF | VISHAY |
IRFI644GPBF THT N channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI740GPBF | VISHAY |
IRFI740GPBF THT N channel transistors |
auf Bestellung 1370 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI830GPBF | VISHAY |
IRFI830GPBF THT N channel transistors |
auf Bestellung 119 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI840GPBF | VISHAY |
IRFI840GPBF THT N channel transistors |
auf Bestellung 229 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9530GPBF | VISHAY |
IRFI9530GPBF THT P channel transistors |
auf Bestellung 364 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9540GPBF | VISHAY |
IRFI9540GPBF THT P channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9630GPBF | VISHAY |
IRFI9630GPBF THT P channel transistors |
auf Bestellung 341 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9634GPBF | VISHAY |
IRFI9634GPBF THT P channel transistors |
auf Bestellung 391 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI9640GPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.9A Gate charge: 44nC On-state resistance: 0.5Ω Gate-source voltage: ±20V Power dissipation: 40W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 590 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9Z34GPBF | VISHAY |
IRFI9Z34GPBF THT P channel transistors |
auf Bestellung 850 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIB6N60APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIBC30GPBF | VISHAY |
IRFIBC30GPBF THT N channel transistors |
auf Bestellung 434 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIBE30GPBF | VISHAY |
IRFIBE30GPBF THT N channel transistors |
auf Bestellung 131 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIBF20GPBF | VISHAY |
IRFIBF20GPBF THT N channel transistors |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIZ48GPBF | VISHAY |
IRFIZ48GPBF THT N channel transistors |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL014TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2227 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL110TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.96A Pulsed drain current: 12A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1029 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL210TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Pulsed drain current: 7.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 262 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL9014TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.1A Pulsed drain current: -14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6009 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL9110TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W Mounting: SMD Case: SOT223 Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -8.8A Drain current: -0.69A Gate charge: 8.7nC On-state resistance: 1.2Ω Power dissipation: 3.1W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP048RPBF | VISHAY |
IRFP048RPBF THT N channel transistors |
auf Bestellung 437 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP054PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP064PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP150PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 523 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP244PBF | VISHAY |
IRFP244PBF THT N channel transistors |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Pulsed drain current: 92A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 391 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 434 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9530SPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| 76+ | 0.94 EUR |
| 88+ | 0.82 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.72 EUR |
| 500+ | 0.69 EUR |
| IRF9540PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 59+ | 1.22 EUR |
| 87+ | 0.83 EUR |
| IRF9540SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.32 EUR |
| 200+ | 1.22 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.1 EUR |
| IRF9610PBF |
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Hersteller: VISHAY
IRF9610PBF THT P channel transistors
IRF9610PBF THT P channel transistors
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 140+ | 0.51 EUR |
| 148+ | 0.48 EUR |
| IRF9620PBF |
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Hersteller: VISHAY
IRF9620PBF THT P channel transistors
IRF9620PBF THT P channel transistors
auf Bestellung 697 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 109+ | 0.66 EUR |
| 114+ | 0.63 EUR |
| IRF9630PBF |
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Hersteller: VISHAY
IRF9630PBF THT P channel transistors
IRF9630PBF THT P channel transistors
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 81+ | 0.89 EUR |
| 87+ | 0.83 EUR |
| IRF9630SPBF |
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Hersteller: VISHAY
IRF9630SPBF SMD P channel transistors
IRF9630SPBF SMD P channel transistors
auf Bestellung 330 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 87+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| IRF9Z24PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 404 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 65+ | 1.1 EUR |
| 100+ | 1.03 EUR |
| 250+ | 0.91 EUR |
| 500+ | 0.82 EUR |
| 750+ | 0.76 EUR |
| 1000+ | 0.72 EUR |
| IRF9Z24SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 62+ | 1.16 EUR |
| 67+ | 1.07 EUR |
| 75+ | 0.96 EUR |
| 500+ | 0.89 EUR |
| IRF9Z34PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.9 EUR |
| 65+ | 1.11 EUR |
| 72+ | 1 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.81 EUR |
| IRF9Z34SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 941 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 52+ | 1.4 EUR |
| 500+ | 1.3 EUR |
| IRFB11N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 440 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.97 EUR |
| 34+ | 2.16 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.29 EUR |
| 1000+ | 1.23 EUR |
| IRFB17N50LPBF |
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Hersteller: VISHAY
IRFB17N50LPBF THT N channel transistors
IRFB17N50LPBF THT N channel transistors
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 35+ | 2.04 EUR |
| 38+ | 1.93 EUR |
| IRFB9N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 883 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 50+ | 1.72 EUR |
| IRFBC20PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 748 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.95 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.64 EUR |
| IRFBC40ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 44+ | 1.66 EUR |
| 49+ | 1.47 EUR |
| 52+ | 1.37 EUR |
| IRFBC40LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 44+ | 1.63 EUR |
| 52+ | 1.4 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.29 EUR |
| IRFBC40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 71+ | 1.02 EUR |
| IRFBE20PBF |
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Hersteller: VISHAY
IRFBE20PBF THT N channel transistors
IRFBE20PBF THT N channel transistors
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.67 EUR |
| 64+ | 1.12 EUR |
| 2000+ | 0.86 EUR |
| IRFBE30PBF |
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Hersteller: VISHAY
IRFBE30PBF THT N channel transistors
IRFBE30PBF THT N channel transistors
auf Bestellung 624 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| IRFBE30SPBF |
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Hersteller: VISHAY
IRFBE30SPBF SMD N channel transistors
IRFBE30SPBF SMD N channel transistors
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.78 EUR |
| 46+ | 1.56 EUR |
| 49+ | 1.47 EUR |
| IRFBF20SPBF |
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Hersteller: VISHAY
IRFBF20SPBF SMD N channel transistors
IRFBF20SPBF SMD N channel transistors
auf Bestellung 925 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.92 EUR |
| IRFBF30PBF |
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Hersteller: VISHAY
IRFBF30 THT N channel transistors
IRFBF30 THT N channel transistors
auf Bestellung 739 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.53 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| IRFBG20PBF |
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Hersteller: VISHAY
IRFBG20PBF THT N channel transistors
IRFBG20PBF THT N channel transistors
auf Bestellung 159 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.53 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| 5000+ | 0.84 EUR |
| IRFD9020PBF |
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Hersteller: VISHAY
IRFD9020PBF THT P channel transistors
IRFD9020PBF THT P channel transistors
auf Bestellung 244 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 114+ | 0.63 EUR |
| 122+ | 0.59 EUR |
| IRFD9110PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.49A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.49A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 426 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 73+ | 0.99 EUR |
| 100+ | 0.85 EUR |
| 200+ | 0.8 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.71 EUR |
| IRFD9210PBF |
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Hersteller: VISHAY
IRFD9210PBF THT P channel transistors
IRFD9210PBF THT P channel transistors
auf Bestellung 2075 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| 1000+ | 0.45 EUR |
| IRFD9220PBF |
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Hersteller: VISHAY
IRFD9220PBF THT P channel transistors
IRFD9220PBF THT P channel transistors
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
| IRFI510GPBF |
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Hersteller: VISHAY
IRFI510GPBF THT N channel transistors
IRFI510GPBF THT N channel transistors
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.45 EUR |
| 55+ | 1.3 EUR |
| 77+ | 0.93 EUR |
| 5000+ | 0.7 EUR |
| IRFI540GPBF |
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Hersteller: VISHAY
IRFI540GPBF THT N channel transistors
IRFI540GPBF THT N channel transistors
auf Bestellung 908 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| IRFI630GPBF |
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Hersteller: VISHAY
IRFI630GPBF THT N channel transistors
IRFI630GPBF THT N channel transistors
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.67 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| IRFI644GPBF |
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Hersteller: VISHAY
IRFI644GPBF THT N channel transistors
IRFI644GPBF THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 33+ | 2.17 EUR |
| 2000+ | 1.3 EUR |
| IRFI740GPBF |
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Hersteller: VISHAY
IRFI740GPBF THT N channel transistors
IRFI740GPBF THT N channel transistors
auf Bestellung 1370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.72 EUR |
| 91+ | 0.79 EUR |
| 99+ | 0.73 EUR |
| IRFI830GPBF |
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Hersteller: VISHAY
IRFI830GPBF THT N channel transistors
IRFI830GPBF THT N channel transistors
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.92 EUR |
| IRFI840GPBF |
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Hersteller: VISHAY
IRFI840GPBF THT N channel transistors
IRFI840GPBF THT N channel transistors
auf Bestellung 229 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.82 EUR |
| 61+ | 1.19 EUR |
| 65+ | 1.12 EUR |
| IRFI9530GPBF |
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Hersteller: VISHAY
IRFI9530GPBF THT P channel transistors
IRFI9530GPBF THT P channel transistors
auf Bestellung 364 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.54 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| IRFI9540GPBF |
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Hersteller: VISHAY
IRFI9540GPBF THT P channel transistors
IRFI9540GPBF THT P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.65 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
| IRFI9630GPBF |
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Hersteller: VISHAY
IRFI9630GPBF THT P channel transistors
IRFI9630GPBF THT P channel transistors
auf Bestellung 341 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| IRFI9634GPBF |
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Hersteller: VISHAY
IRFI9634GPBF THT P channel transistors
IRFI9634GPBF THT P channel transistors
auf Bestellung 391 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 77+ | 0.93 EUR |
| 82+ | 0.87 EUR |
| IRFI9640GPBF | ![]() |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.9A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.9A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 50+ | 1.49 EUR |
| 500+ | 1.4 EUR |
| 2000+ | 1.33 EUR |
| IRFI9Z34GPBF |
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Hersteller: VISHAY
IRFI9Z34GPBF THT P channel transistors
IRFI9Z34GPBF THT P channel transistors
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| IRFIB6N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.23 EUR |
| 50+ | 1.94 EUR |
| 1000+ | 1.49 EUR |
| IRFIBC30GPBF |
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Hersteller: VISHAY
IRFIBC30GPBF THT N channel transistors
IRFIBC30GPBF THT N channel transistors
auf Bestellung 434 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 64+ | 1.13 EUR |
| 68+ | 1.06 EUR |
| IRFIBE30GPBF |
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Hersteller: VISHAY
IRFIBE30GPBF THT N channel transistors
IRFIBE30GPBF THT N channel transistors
auf Bestellung 131 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
| IRFIBF20GPBF |
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Hersteller: VISHAY
IRFIBF20GPBF THT N channel transistors
IRFIBF20GPBF THT N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 40+ | 1.79 EUR |
| 250+ | 1.53 EUR |
| IRFIZ48GPBF |
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Hersteller: VISHAY
IRFIZ48GPBF THT N channel transistors
IRFIZ48GPBF THT N channel transistors
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.06 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| IRFL014TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2227 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.71 EUR |
| 106+ | 0.68 EUR |
| 112+ | 0.64 EUR |
| 119+ | 0.6 EUR |
| 200+ | 0.57 EUR |
| 500+ | 0.52 EUR |
| IRFL110TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1029 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 112+ | 0.64 EUR |
| 126+ | 0.57 EUR |
| 132+ | 0.54 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.47 EUR |
| IRFL210TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 110+ | 0.65 EUR |
| 138+ | 0.52 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.44 EUR |
| IRFL9014TRPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6009 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| 250+ | 0.57 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 2500+ | 0.4 EUR |
| IRFL9110TRPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -8.8A
Drain current: -0.69A
Gate charge: 8.7nC
On-state resistance: 1.2Ω
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -8.8A
Drain current: -0.69A
Gate charge: 8.7nC
On-state resistance: 1.2Ω
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 89+ | 0.81 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| IRFP048RPBF |
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Hersteller: VISHAY
IRFP048RPBF THT N channel transistors
IRFP048RPBF THT N channel transistors
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.35 EUR |
| 45+ | 1.6 EUR |
| 48+ | 1.5 EUR |
| IRFP054PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 19+ | 3.83 EUR |
| 25+ | 3.47 EUR |
| 50+ | 3.23 EUR |
| 100+ | 3.03 EUR |
| 125+ | 2.97 EUR |
| 250+ | 2.82 EUR |
| IRFP064PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.65 EUR |
| 1000+ | 3.39 EUR |
| 2500+ | 3.03 EUR |
| 5000+ | 2.86 EUR |
| IRFP150PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 523 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.92 EUR |
| 22+ | 3.35 EUR |
| 24+ | 3.06 EUR |
| 27+ | 2.7 EUR |
| 50+ | 2.49 EUR |
| 100+ | 2.33 EUR |
| 125+ | 2.29 EUR |
| IRFP22N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.58 EUR |
| 19+ | 3.96 EUR |
| 25+ | 3.69 EUR |
| 50+ | 3.5 EUR |
| 100+ | 3.32 EUR |
| 125+ | 3.27 EUR |
| 200+ | 3.16 EUR |
| IRFP244PBF |
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Hersteller: VISHAY
IRFP244PBF THT N channel transistors
IRFP244PBF THT N channel transistors
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 36+ | 1.99 EUR |
| 5000+ | 1.9 EUR |
| IRFP250PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.96 EUR |
| 27+ | 2.75 EUR |
| 28+ | 2.62 EUR |
| 30+ | 2.46 EUR |
| 1000+ | 2.25 EUR |
| IRFP254PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 391 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.6 EUR |
| 24+ | 2.99 EUR |
| 26+ | 2.76 EUR |
| 50+ | 2.57 EUR |
| 100+ | 2.4 EUR |
| 125+ | 2.35 EUR |
| 250+ | 2.16 EUR |
| IRFP260PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 434 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| 25+ | 3.2 EUR |
| 50+ | 3.03 EUR |
| 100+ | 2.92 EUR |









