| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRFR9120PBF | VISHAY |
IRFR9120PBF SMD P channel transistors |
auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 143 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1557 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9310PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 685 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9310TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2229 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFRC20PBF | VISHAY |
IRFRC20PBF SMD N channel transistors |
auf Bestellung 2070 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFS11N50APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 181 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFS9N60APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 49nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 115 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFSL11N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 190W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 459 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU024PBF | VISHAY |
IRFU024PBF THT N channel transistors |
auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU120PBF | VISHAY |
IRFU120PBF THT N channel transistors |
auf Bestellung 919 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFU220PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU320PBF | VISHAY |
IRFU320PBF THT N channel transistors |
auf Bestellung 599 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU420PBF | VISHAY |
IRFU420PBF THT N channel transistors |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFU9014PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251 Kind of package: tube Case: IPAK; TO251 Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Gate charge: 12nC On-state resistance: 0.5Ω Power dissipation: 25W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 852 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFU9024PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 159 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU9110PBF | VISHAY |
IRFU9110PBF THT P channel transistors |
auf Bestellung 504 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU9120PBF | VISHAY |
IRFU9120PBF THT P channel transistors |
auf Bestellung 1629 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU9310PBF | VISHAY |
IRFU9310PBF THT P channel transistors |
auf Bestellung 2146 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFUC20PBF | VISHAY |
IRFUC20PBF THT N channel transistors |
auf Bestellung 198 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ14PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.2A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 939 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ24PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 481 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 340 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ48RPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 291A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 274 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL510PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 18A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 241 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRL640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 794 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLI640GPBF | VISHAY |
IRLI640GPBF THT N channel transistors |
auf Bestellung 368 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLIZ44GPBF | VISHAY |
IRLIZ44GPBF THT N channel transistors |
auf Bestellung 272 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 519 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLR014PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.28Ω Gate charge: 8.4nC Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLR110PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 17A On-state resistance: 0.54Ω Gate charge: 6.1nC Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 554 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLR120TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1134 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLU014PBF | VISHAY |
IRLU014PBF THT N channel transistors |
auf Bestellung 1945 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Mounting: THT Kind of channel: enhancement Gate-source voltage: ±10V Kind of package: tube Gate charge: 66nC On-state resistance: 28mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 369 Stücke: Lieferzeit 7-14 Tag (e) |
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K104K10X7RF5UH5 | VISHAY |
Category: Ceramic capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7922 Stücke: Lieferzeit 7-14 Tag (e) |
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K104K10X7RF5UL2 | VISHAY |
Category: Ceramic capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: THT Operating temperature: -55...125°C Terminal pitch: 2.5mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15663 Stücke: Lieferzeit 7-14 Tag (e) |
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K104K15X7RF5TH5 | VISHAY |
Category: MLCC THT capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 532 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL02-E4/51 | VISHAY |
KBL02-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL04-E4/51 | VISHAY |
KBL04-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 374 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL06-E4/51 | VISHAY |
KBL06-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL08-E4/51 | VISHAY |
KBL08-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL10-E4/51 | VISHAY |
KBL10-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU4D-E4/51 | VISHAY |
KBU4D-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 204 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU4K-E4/51 | VISHAY |
KBU4K-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 192 Stücke: Lieferzeit 7-14 Tag (e) |
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KBU6M-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 250A; flat Case: KBU Max. forward voltage: 1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 1kV Max. forward impulse current: 250A Type of bridge rectifier: single-phase Anzahl je Verpackung: 1 Stücke |
auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU8B-E4/51 | VISHAY |
KBU8B-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU8D-E4/51 | VISHAY |
KBU8D-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU8G-E4/51 | VISHAY |
KBU8G-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU8J-E4/51 | VISHAY |
KBU8J-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU8K-E4/51 | VISHAY |
KBU8K-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 176 Stücke: Lieferzeit 7-14 Tag (e) |
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KMKP 900-2,2IA | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 2.2uF; 900VAC; 16A; Ø35x72mm; ±10% Type of capacitor: polypropylene Capacitance: 2.2µF Body dimensions: Ø35x72mm Tolerance: ±10% Height: 72mm Diameter: 35mm Max. operating current: 16A Operating voltage: 900V AC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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LH1540AT | VISHAY |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; LH; 1-phase Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V Relay variant: 1-phase Manufacturer series: LH Mounting: THT Operating temperature: -40...85°C Release time: 50µs Operate time: 130µs Control current max.: 50mA Max. operating current: 120mA On-state resistance: 22Ω Case: DIP6 Insulation voltage: 5.3kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1588 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL101A-GS08 | VISHAY |
LL101A-GS08 SMD Schottky diodes |
auf Bestellung 14795 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL101C-GS08 | VISHAY |
LL101C-GS08 SMD Schottky diodes |
auf Bestellung 2142 Stücke: Lieferzeit 7-14 Tag (e) |
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LL103A-GS08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 40V; 0.2A; 10ns Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 15A Kind of package: 7 inch reel Capacitance: 50pF Reverse recovery time: 10ns Leakage current: 5µA Power dissipation: 0.4W Quantity in set/package: 2500pcs. Features of semiconductor devices: small signal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10396 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL103B-GS08 | VISHAY |
LL103B-GS08 SMD Schottky diodes |
auf Bestellung 2160 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL103C-GS08 | VISHAY |
LL103C-GS08 SMD Schottky diodes |
auf Bestellung 285 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL41-GS08 | VISHAY |
LL41-GS08 SMD Schottky diodes |
auf Bestellung 3237 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFR9120PBF |
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Hersteller: VISHAY
IRFR9120PBF SMD P channel transistors
IRFR9120PBF SMD P channel transistors
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 92+ | 0.78 EUR |
| 141+ | 0.51 EUR |
| 148+ | 0.48 EUR |
| IRFR9220PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 65+ | 1.11 EUR |
| 83+ | 0.87 EUR |
| 90+ | 0.8 EUR |
| 525+ | 0.7 EUR |
| IRFR9220TRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1557 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 250+ | 0.97 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.79 EUR |
| 2000+ | 0.67 EUR |
| 4000+ | 0.55 EUR |
| 6000+ | 0.48 EUR |
| IRFR9310PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 685 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 78+ | 0.92 EUR |
| 88+ | 0.82 EUR |
| 150+ | 0.76 EUR |
| 525+ | 0.66 EUR |
| 1050+ | 0.62 EUR |
| 2025+ | 0.59 EUR |
| IRFR9310TRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2229 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 59+ | 1.23 EUR |
| 64+ | 1.12 EUR |
| 79+ | 0.91 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
| IRFRC20PBF |
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Hersteller: VISHAY
IRFRC20PBF SMD N channel transistors
IRFRC20PBF SMD N channel transistors
auf Bestellung 2070 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 130+ | 0.55 EUR |
| 137+ | 0.52 EUR |
| IRFS11N50APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 28+ | 2.56 EUR |
| 31+ | 2.33 EUR |
| 50+ | 1.93 EUR |
| IRFS9N60APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 37+ | 1.94 EUR |
| 50+ | 1.77 EUR |
| IRFSL11N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 34+ | 2.12 EUR |
| 38+ | 1.89 EUR |
| 50+ | 1.69 EUR |
| 250+ | 1.57 EUR |
| IRFU024PBF |
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Hersteller: VISHAY
IRFU024PBF THT N channel transistors
IRFU024PBF THT N channel transistors
auf Bestellung 215 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 135+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| IRFU120PBF | ![]() |
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Hersteller: VISHAY
IRFU120PBF THT N channel transistors
IRFU120PBF THT N channel transistors
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 118+ | 0.61 EUR |
| 125+ | 0.58 EUR |
| IRFU220PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 91+ | 0.79 EUR |
| 107+ | 0.67 EUR |
| 122+ | 0.59 EUR |
| 150+ | 0.56 EUR |
| IRFU320PBF |
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Hersteller: VISHAY
IRFU320PBF THT N channel transistors
IRFU320PBF THT N channel transistors
auf Bestellung 599 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 151+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| IRFU420PBF |
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Hersteller: VISHAY
IRFU420PBF THT N channel transistors
IRFU420PBF THT N channel transistors
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 152+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| IRFU9014PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Kind of package: tube
Case: IPAK; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Gate charge: 12nC
On-state resistance: 0.5Ω
Power dissipation: 25W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Kind of package: tube
Case: IPAK; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Gate charge: 12nC
On-state resistance: 0.5Ω
Power dissipation: 25W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 852 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 92+ | 0.78 EUR |
| 105+ | 0.68 EUR |
| 150+ | 0.65 EUR |
| 375+ | 0.62 EUR |
| 1050+ | 0.59 EUR |
| 5025+ | 0.55 EUR |
| IRFU9024PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 159 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 90+ | 0.8 EUR |
| 99+ | 0.73 EUR |
| 150+ | 0.7 EUR |
| 300+ | 0.68 EUR |
| 525+ | 0.65 EUR |
| 750+ | 0.64 EUR |
| IRFU9110PBF |
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Hersteller: VISHAY
IRFU9110PBF THT P channel transistors
IRFU9110PBF THT P channel transistors
auf Bestellung 504 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 180+ | 0.4 EUR |
| 191+ | 0.38 EUR |
| IRFU9120PBF |
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Hersteller: VISHAY
IRFU9120PBF THT P channel transistors
IRFU9120PBF THT P channel transistors
auf Bestellung 1629 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 157+ | 0.46 EUR |
| 167+ | 0.43 EUR |
| IRFU9310PBF |
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Hersteller: VISHAY
IRFU9310PBF THT P channel transistors
IRFU9310PBF THT P channel transistors
auf Bestellung 2146 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 130+ | 0.55 EUR |
| 138+ | 0.52 EUR |
| IRFUC20PBF | ![]() |
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Hersteller: VISHAY
IRFUC20PBF THT N channel transistors
IRFUC20PBF THT N channel transistors
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 109+ | 0.66 EUR |
| 115+ | 0.62 EUR |
| IRFZ14PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 939 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 132+ | 0.54 EUR |
| 1000+ | 0.44 EUR |
| IRFZ24PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 481 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 76+ | 0.95 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.8 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.65 EUR |
| IRFZ44PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 340 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 44+ | 1.63 EUR |
| 59+ | 1.23 EUR |
| 61+ | 1.17 EUR |
| IRFZ48RPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 291A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 291A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 274 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 50+ | 1.97 EUR |
| 100+ | 1.83 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.47 EUR |
| IRL510PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.11 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.65 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.59 EUR |
| IRL640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 241 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 57+ | 1.27 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.07 EUR |
| 250+ | 1.06 EUR |
| IRL640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
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| IRL640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 794 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 42+ | 1.72 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.26 EUR |
| 500+ | 1.2 EUR |
| 800+ | 1.17 EUR |
| 2400+ | 1.1 EUR |
| IRLI640GPBF |
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Hersteller: VISHAY
IRLI640GPBF THT N channel transistors
IRLI640GPBF THT N channel transistors
auf Bestellung 368 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 65+ | 1.12 EUR |
| 68+ | 1.06 EUR |
| IRLIZ44GPBF |
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Hersteller: VISHAY
IRLIZ44GPBF THT N channel transistors
IRLIZ44GPBF THT N channel transistors
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.05 EUR |
| 44+ | 1.66 EUR |
| 46+ | 1.56 EUR |
| 2000+ | 1.5 EUR |
| IRLL110TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 519 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 98+ | 0.74 EUR |
| 104+ | 0.69 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |
| 2500+ | 0.43 EUR |
| IRLR014PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 50+ | 1.43 EUR |
| 75+ | 0.96 EUR |
| 300+ | 0.45 EUR |
| IRLR110PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 17A
On-state resistance: 0.54Ω
Gate charge: 6.1nC
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 17A
On-state resistance: 0.54Ω
Gate charge: 6.1nC
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 554 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 117+ | 0.61 EUR |
| 128+ | 0.56 EUR |
| 525+ | 0.51 EUR |
| 2025+ | 0.48 EUR |
| 5025+ | 0.46 EUR |
| 11250+ | 0.44 EUR |
| IRLR120TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1134 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 134+ | 0.53 EUR |
| 152+ | 0.47 EUR |
| 169+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| IRLU014PBF |
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Hersteller: VISHAY
IRLU014PBF THT N channel transistors
IRLU014PBF THT N channel transistors
auf Bestellung 1945 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.66 EUR |
| 131+ | 0.55 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| IRLZ44PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 369 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 47+ | 1.53 EUR |
| 53+ | 1.37 EUR |
| 100+ | 1.32 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.19 EUR |
| 750+ | 1.14 EUR |
| K104K10X7RF5UH5 |
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Hersteller: VISHAY
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Anzahl je Verpackung: 1 Stücke
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7922 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 345+ | 0.21 EUR |
| 692+ | 0.1 EUR |
| 844+ | 0.085 EUR |
| 1044+ | 0.068 EUR |
| 1124+ | 0.064 EUR |
| 1169+ | 0.061 EUR |
| K104K10X7RF5UL2 |
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Hersteller: VISHAY
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Anzahl je Verpackung: 1 Stücke
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15663 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 342+ | 0.21 EUR |
| 474+ | 0.15 EUR |
| 646+ | 0.11 EUR |
| 737+ | 0.097 EUR |
| 960+ | 0.075 EUR |
| 1058+ | 0.068 EUR |
| 2500+ | 0.061 EUR |
| K104K15X7RF5TH5 |
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Hersteller: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Anzahl je Verpackung: 1 Stücke
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 532 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 532+ | 0.13 EUR |
| 1000+ | 0.072 EUR |
| KBL02-E4/51 |
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Hersteller: VISHAY
KBL02-E4/51 Flat single phase diode bridge rectif.
KBL02-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.73 EUR |
| 32+ | 2.25 EUR |
| 34+ | 2.12 EUR |
| KBL04-E4/51 |
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Hersteller: VISHAY
KBL04-E4/51 Flat single phase diode bridge rectif.
KBL04-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 374 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.19 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.04 EUR |
| KBL06-E4/51 |
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Hersteller: VISHAY
KBL06-E4/51 Flat single phase diode bridge rectif.
KBL06-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 6+ | 11.91 EUR |
| 17+ | 4.2 EUR |
| 300+ | 2.79 EUR |
| KBL08-E4/51 |
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Hersteller: VISHAY
KBL08-E4/51 Flat single phase diode bridge rectif.
KBL08-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.42 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| KBL10-E4/51 |
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Hersteller: VISHAY
KBL10-E4/51 Flat single phase diode bridge rectif.
KBL10-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.61 EUR |
| 31+ | 2.32 EUR |
| 33+ | 2.19 EUR |
| KBU4D-E4/51 |
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Hersteller: VISHAY
KBU4D-E4/51 Flat single phase diode bridge rectif.
KBU4D-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.32 EUR |
| 30+ | 2.42 EUR |
| 32+ | 2.29 EUR |
| KBU4K-E4/51 |
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Hersteller: VISHAY
KBU4K-E4/51 Flat single phase diode bridge rectif.
KBU4K-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.65 EUR |
| 30+ | 2.4 EUR |
| 32+ | 2.27 EUR |
| 5000+ | 2.23 EUR |
| KBU6M-E4/51 |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 250A; flat
Case: KBU
Max. forward voltage: 1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 250A
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 250A; flat
Case: KBU
Max. forward voltage: 1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 250A
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 19+ | 3.8 EUR |
| 50+ | 3.3 EUR |
| 100+ | 3.1 EUR |
| 250+ | 2.86 EUR |
| KBU8B-E4/51 |
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Hersteller: VISHAY
KBU8B-E4/51 Flat single phase diode bridge rectif.
KBU8B-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.56 EUR |
| 19+ | 3.86 EUR |
| 20+ | 3.65 EUR |
| 250+ | 3.5 EUR |
| KBU8D-E4/51 |
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Hersteller: VISHAY
KBU8D-E4/51 Flat single phase diode bridge rectif.
KBU8D-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.81 EUR |
| 22+ | 3.4 EUR |
| 23+ | 3.22 EUR |
| KBU8G-E4/51 |
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Hersteller: VISHAY
KBU8G-E4/51 Flat single phase diode bridge rectif.
KBU8G-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.72 EUR |
| 18+ | 4.19 EUR |
| 19+ | 3.83 EUR |
| 20+ | 3.62 EUR |
| KBU8J-E4/51 |
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Hersteller: VISHAY
KBU8J-E4/51 Flat single phase diode bridge rectif.
KBU8J-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.48 EUR |
| 25+ | 2.92 EUR |
| 26+ | 2.76 EUR |
| 2500+ | 2.69 EUR |
| KBU8K-E4/51 |
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Hersteller: VISHAY
KBU8K-E4/51 Flat single phase diode bridge rectif.
KBU8K-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 176 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.79 EUR |
| 22+ | 3.4 EUR |
| 23+ | 3.22 EUR |
| 250+ | 3.12 EUR |
| KMKP 900-2,2IA |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2uF; 900VAC; 16A; Ø35x72mm; ±10%
Type of capacitor: polypropylene
Capacitance: 2.2µF
Body dimensions: Ø35x72mm
Tolerance: ±10%
Height: 72mm
Diameter: 35mm
Max. operating current: 16A
Operating voltage: 900V AC
Anzahl je Verpackung: 1 Stücke
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2uF; 900VAC; 16A; Ø35x72mm; ±10%
Type of capacitor: polypropylene
Capacitance: 2.2µF
Body dimensions: Ø35x72mm
Tolerance: ±10%
Height: 72mm
Diameter: 35mm
Max. operating current: 16A
Operating voltage: 900V AC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 67.94 EUR |
| 5+ | 62.59 EUR |
| 10+ | 58.96 EUR |
| 20+ | 57.01 EUR |
| 50+ | 55.86 EUR |
| LH1540AT |
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Hersteller: VISHAY
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; LH; 1-phase
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V
Relay variant: 1-phase
Manufacturer series: LH
Mounting: THT
Operating temperature: -40...85°C
Release time: 50µs
Operate time: 130µs
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 22Ω
Case: DIP6
Insulation voltage: 5.3kV
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; LH; 1-phase
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V
Relay variant: 1-phase
Manufacturer series: LH
Mounting: THT
Operating temperature: -40...85°C
Release time: 50µs
Operate time: 130µs
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 22Ω
Case: DIP6
Insulation voltage: 5.3kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1588 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 28+ | 2.63 EUR |
| 50+ | 2.29 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.62 EUR |
| LL101A-GS08 |
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Hersteller: VISHAY
LL101A-GS08 SMD Schottky diodes
LL101A-GS08 SMD Schottky diodes
auf Bestellung 14795 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 181+ | 0.4 EUR |
| 1603+ | 0.045 EUR |
| 1695+ | 0.042 EUR |
| LL101C-GS08 |
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Hersteller: VISHAY
LL101C-GS08 SMD Schottky diodes
LL101C-GS08 SMD Schottky diodes
auf Bestellung 2142 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 857+ | 0.084 EUR |
| 1292+ | 0.055 EUR |
| 1367+ | 0.052 EUR |
| LL103A-GS08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 40V; 0.2A; 10ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 15A
Kind of package: 7 inch reel
Capacitance: 50pF
Reverse recovery time: 10ns
Leakage current: 5µA
Power dissipation: 0.4W
Quantity in set/package: 2500pcs.
Features of semiconductor devices: small signal
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 40V; 0.2A; 10ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 15A
Kind of package: 7 inch reel
Capacitance: 50pF
Reverse recovery time: 10ns
Leakage current: 5µA
Power dissipation: 0.4W
Quantity in set/package: 2500pcs.
Features of semiconductor devices: small signal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10396 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 550+ | 0.13 EUR |
| 742+ | 0.096 EUR |
| 845+ | 0.085 EUR |
| 1124+ | 0.064 EUR |
| 1266+ | 0.056 EUR |
| 2500+ | 0.049 EUR |
| LL103B-GS08 |
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Hersteller: VISHAY
LL103B-GS08 SMD Schottky diodes
LL103B-GS08 SMD Schottky diodes
auf Bestellung 2160 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 185+ | 0.39 EUR |
| 1405+ | 0.051 EUR |
| 1484+ | 0.048 EUR |
| LL103C-GS08 |
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Hersteller: VISHAY
LL103C-GS08 SMD Schottky diodes
LL103C-GS08 SMD Schottky diodes
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 279+ | 0.26 EUR |
| 320+ | 0.23 EUR |
| 880+ | 0.082 EUR |
| 62500+ | 0.051 EUR |
| LL41-GS08 |
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Hersteller: VISHAY
LL41-GS08 SMD Schottky diodes
LL41-GS08 SMD Schottky diodes
auf Bestellung 3237 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 222+ | 0.32 EUR |
| 947+ | 0.076 EUR |
| 1000+ | 0.072 EUR |
| 2500+ | 0.069 EUR |

















