| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRF640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1116 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1070 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF644PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 639 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF644SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 116 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF710PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 36W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: THT Kind of channel: enhancement Gate charge: 17nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF710STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 17nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 626 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF720PBF | VISHAY |
IRF720PBF THT N channel transistors |
auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF730PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 601 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 973 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF740LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 39nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 492 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 63nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2152 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 63nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 551 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 474 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF820APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 867 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF820ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 969 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF820PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 8A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 8A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF830ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 934 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF830APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 186 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF830PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1001 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF840ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 360 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF840LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 702 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF840PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3178 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF840SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9510PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 8.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9510SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9530PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF9530SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 441 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9540PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Mounting: THT Case: TO220AB Kind of package: tube Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -72A Drain current: -13A Gate charge: 61nC On-state resistance: 0.2Ω Gate-source voltage: ±20V Power dissipation: 150W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1223 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9610PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9620PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Pulsed drain current: -14A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 663 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9630PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Pulsed drain current: -26A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9630SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Pulsed drain current: -26A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 275 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9Z24PBF | VISHAY |
IRF9Z24PBF THT P channel transistors |
auf Bestellung 403 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9Z24SPBF | VISHAY |
IRF9Z24SPBF SMD P channel transistors |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9Z34PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Pulsed drain current: -72A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhancement Gate charge: 34nC Heatsink thickness: 1.14...1.4mm Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB11N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 440 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB17N50LPBF | VISHAY |
IRFB17N50LPBF THT N channel transistors |
auf Bestellung 184 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB9N60APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Gate charge: 49nC On-state resistance: 0.75Ω Gate-source voltage: ±30V Power dissipation: 170W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 879 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC20PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 8A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 687 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBE20PBF | VISHAY |
IRFBE20PBF THT N channel transistors |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBE30PBF | VISHAY |
IRFBE30PBF THT N channel transistors |
auf Bestellung 612 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBE30SPBF | VISHAY |
IRFBE30SPBF SMD N channel transistors |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBF20SPBF | VISHAY |
IRFBF20SPBF SMD N channel transistors |
auf Bestellung 925 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBF30PBF | VISHAY |
IRFBF30 THT N channel transistors |
auf Bestellung 739 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFBG20PBF | VISHAY |
IRFBG20PBF THT N channel transistors |
auf Bestellung 356 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9020PBF | VISHAY |
IRFD9020PBF THT P channel transistors |
auf Bestellung 168 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9110PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.49A Power dissipation: 1.3W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 8.7nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 426 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9210PBF | VISHAY |
IRFD9210PBF THT P channel transistors |
auf Bestellung 1975 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9220PBF | VISHAY |
IRFD9220PBF THT P channel transistors |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI510GPBF | VISHAY |
IRFI510GPBF THT N channel transistors |
auf Bestellung 1153 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI540GPBF | VISHAY |
IRFI540GPBF THT N channel transistors |
auf Bestellung 788 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI630GPBF | VISHAY |
IRFI630GPBF THT N channel transistors |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI644GPBF | VISHAY |
IRFI644GPBF THT N channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI740GPBF | VISHAY |
IRFI740GPBF THT N channel transistors |
auf Bestellung 1311 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI830GPBF | VISHAY |
IRFI830GPBF THT N channel transistors |
auf Bestellung 119 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1116 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 52+ | 1.39 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.1 EUR |
| 250+ | 1.02 EUR |
| 300+ | 1 EUR |
| 500+ | 0.96 EUR |
| IRF640PBF-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 54+ | 1.34 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.17 EUR |
| 100+ | 1.1 EUR |
| 250+ | 1 EUR |
| 500+ | 0.92 EUR |
| IRF640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1070 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.47 EUR |
| 47+ | 1.53 EUR |
| 52+ | 1.4 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.04 EUR |
| 750+ | 1.03 EUR |
| IRF644PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 639 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 46+ | 1.57 EUR |
| 54+ | 1.35 EUR |
| 100+ | 1.23 EUR |
| 250+ | 1.07 EUR |
| 500+ | 0.94 EUR |
| 750+ | 0.87 EUR |
| IRF644SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.96 EUR |
| 50+ | 1.76 EUR |
| 1000+ | 1.59 EUR |
| IRF710PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 17nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 17nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 120+ | 0.6 EUR |
| 1000+ | 0.42 EUR |
| IRF710STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 626 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 76+ | 0.95 EUR |
| 100+ | 0.75 EUR |
| 800+ | 0.65 EUR |
| 1600+ | 0.63 EUR |
| 2400+ | 0.61 EUR |
| 4000+ | 0.6 EUR |
| IRF720PBF |
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Hersteller: VISHAY
IRF720PBF THT N channel transistors
IRF720PBF THT N channel transistors
auf Bestellung 215 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 132+ | 0.54 EUR |
| 140+ | 0.51 EUR |
| IRF730PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 601 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 103+ | 0.7 EUR |
| 1000+ | 0.67 EUR |
| IRF740ALPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 973 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 40+ | 1.79 EUR |
| 50+ | 1.57 EUR |
| 250+ | 1.43 EUR |
| IRF740APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF740LCPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.1 EUR |
| 43+ | 1.69 EUR |
| 47+ | 1.54 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.1 EUR |
| IRF740PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2152 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 72+ | 1 EUR |
| 74+ | 0.97 EUR |
| 76+ | 0.94 EUR |
| 77+ | 0.93 EUR |
| 100+ | 0.9 EUR |
| 150+ | 0.87 EUR |
| IRF740PBF-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 551 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 52+ | 1.4 EUR |
| 55+ | 1.32 EUR |
| 57+ | 1.26 EUR |
| 100+ | 1.19 EUR |
| 500+ | 1.12 EUR |
| IRF740SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 474 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| 37+ | 1.94 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.39 EUR |
| 500+ | 1.26 EUR |
| IRF820APBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 867 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 74+ | 0.97 EUR |
| 88+ | 0.82 EUR |
| 100+ | 0.79 EUR |
| 1000+ | 0.73 EUR |
| IRF820ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 969 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.9 EUR |
| 59+ | 1.23 EUR |
| 69+ | 1.05 EUR |
| 100+ | 0.98 EUR |
| 250+ | 0.89 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.76 EUR |
| IRF820PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.37 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.5 EUR |
| IRF830ALPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 934 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 40+ | 1.8 EUR |
| 46+ | 1.56 EUR |
| 57+ | 1.27 EUR |
| 100+ | 1.22 EUR |
| 1000+ | 1.1 EUR |
| IRF830APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.93 EUR |
| 52+ | 1.39 EUR |
| 61+ | 1.19 EUR |
| 100+ | 1.1 EUR |
| 250+ | 0.99 EUR |
| 500+ | 0.9 EUR |
| 750+ | 0.85 EUR |
| IRF830PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1001 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 87+ | 0.83 EUR |
| 115+ | 0.62 EUR |
| 125+ | 0.57 EUR |
| 129+ | 0.56 EUR |
| IRF840ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 360 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 45+ | 1.6 EUR |
| 48+ | 1.52 EUR |
| 54+ | 1.33 EUR |
| 100+ | 1.27 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.1 EUR |
| IRF840LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 702 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| 49+ | 1.49 EUR |
| 53+ | 1.36 EUR |
| 56+ | 1.29 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.12 EUR |
| 500+ | 1.06 EUR |
| IRF840PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3178 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 42+ | 1.73 EUR |
| 48+ | 1.52 EUR |
| 62+ | 1.16 EUR |
| 93+ | 0.77 EUR |
| IRF840SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 71+ | 1.02 EUR |
| 75+ | 0.96 EUR |
| IRF9510PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 120+ | 0.6 EUR |
| 135+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.42 EUR |
| IRF9510SPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 59+ | 1.23 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.99 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |
| IRF9530PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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| IRF9530SPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| 76+ | 0.94 EUR |
| 88+ | 0.82 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.72 EUR |
| 500+ | 0.69 EUR |
| IRF9540PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -72A
Drain current: -13A
Gate charge: 61nC
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 150W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -72A
Drain current: -13A
Gate charge: 61nC
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 150W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1223 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 52+ | 1.4 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.12 EUR |
| 100+ | 1.01 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.79 EUR |
| IRF9610PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 76+ | 0.95 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.81 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.74 EUR |
| IRF9620PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -14A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -14A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 663 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 67+ | 1.08 EUR |
| 100+ | 1.02 EUR |
| 200+ | 0.96 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.86 EUR |
| 750+ | 0.82 EUR |
| IRF9630PBF |
![]() |
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.06 EUR |
| 55+ | 1.3 EUR |
| 67+ | 1.07 EUR |
| 100+ | 0.99 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.8 EUR |
| IRF9630SPBF |
![]() |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Pulsed drain current: -26A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 38+ | 1.92 EUR |
| 61+ | 1.19 EUR |
| IRF9Z24PBF |
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Hersteller: VISHAY
IRF9Z24PBF THT P channel transistors
IRF9Z24PBF THT P channel transistors
auf Bestellung 403 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 129+ | 0.56 EUR |
| 139+ | 0.51 EUR |
| IRF9Z24SPBF |
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Hersteller: VISHAY
IRF9Z24SPBF SMD P channel transistors
IRF9Z24SPBF SMD P channel transistors
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 114+ | 0.63 EUR |
| 120+ | 0.6 EUR |
| IRF9Z34PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 34nC
Heatsink thickness: 1.14...1.4mm
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 34nC
Heatsink thickness: 1.14...1.4mm
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 2000+ | 0.63 EUR |
| IRFB11N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 440 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.97 EUR |
| 34+ | 2.16 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.29 EUR |
| 1000+ | 1.23 EUR |
| IRFB17N50LPBF |
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Hersteller: VISHAY
IRFB17N50LPBF THT N channel transistors
IRFB17N50LPBF THT N channel transistors
auf Bestellung 184 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 35+ | 2.04 EUR |
| 38+ | 1.93 EUR |
| IRFB9N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Gate charge: 49nC
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 170W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Gate charge: 49nC
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 170W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 48+ | 1.5 EUR |
| IRFBC20PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 687 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 75+ | 0.97 EUR |
| 100+ | 0.86 EUR |
| 250+ | 0.8 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.62 EUR |
| IRFBC40ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 44+ | 1.66 EUR |
| 49+ | 1.47 EUR |
| 52+ | 1.37 EUR |
| IRFBC40LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 44+ | 1.63 EUR |
| 52+ | 1.4 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.29 EUR |
| IRFBC40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 71+ | 1.02 EUR |
| IRFBE20PBF |
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Hersteller: VISHAY
IRFBE20PBF THT N channel transistors
IRFBE20PBF THT N channel transistors
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.37 EUR |
| 64+ | 1.12 EUR |
| 1000+ | 0.84 EUR |
| IRFBE30PBF |
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Hersteller: VISHAY
IRFBE30PBF THT N channel transistors
IRFBE30PBF THT N channel transistors
auf Bestellung 612 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| IRFBE30SPBF |
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Hersteller: VISHAY
IRFBE30SPBF SMD N channel transistors
IRFBE30SPBF SMD N channel transistors
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.59 EUR |
| 47+ | 1.54 EUR |
| 49+ | 1.47 EUR |
| IRFBF20SPBF |
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Hersteller: VISHAY
IRFBF20SPBF SMD N channel transistors
IRFBF20SPBF SMD N channel transistors
auf Bestellung 925 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 74+ | 0.97 EUR |
| 79+ | 0.92 EUR |
| IRFBF30PBF |
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Hersteller: VISHAY
IRFBF30 THT N channel transistors
IRFBF30 THT N channel transistors
auf Bestellung 739 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.18 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| IRFBG20PBF |
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Hersteller: VISHAY
IRFBG20PBF THT N channel transistors
IRFBG20PBF THT N channel transistors
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.86 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| IRFD9020PBF |
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Hersteller: VISHAY
IRFD9020PBF THT P channel transistors
IRFD9020PBF THT P channel transistors
auf Bestellung 168 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 114+ | 0.63 EUR |
| 122+ | 0.59 EUR |
| IRFD9110PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.49A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.49A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 426 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 73+ | 0.99 EUR |
| 100+ | 0.85 EUR |
| 200+ | 0.8 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.71 EUR |
| IRFD9210PBF |
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Hersteller: VISHAY
IRFD9210PBF THT P channel transistors
IRFD9210PBF THT P channel transistors
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 146+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| 1000+ | 0.45 EUR |
| IRFD9220PBF |
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Hersteller: VISHAY
IRFD9220PBF THT P channel transistors
IRFD9220PBF THT P channel transistors
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
| IRFI510GPBF |
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Hersteller: VISHAY
IRFI510GPBF THT N channel transistors
IRFI510GPBF THT N channel transistors
auf Bestellung 1153 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.1 EUR |
| 118+ | 0.61 EUR |
| 125+ | 0.57 EUR |
| IRFI540GPBF |
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Hersteller: VISHAY
IRFI540GPBF THT N channel transistors
IRFI540GPBF THT N channel transistors
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| IRFI630GPBF |
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Hersteller: VISHAY
IRFI630GPBF THT N channel transistors
IRFI630GPBF THT N channel transistors
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| IRFI644GPBF |
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Hersteller: VISHAY
IRFI644GPBF THT N channel transistors
IRFI644GPBF THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 33+ | 2.17 EUR |
| 50+ | 1.43 EUR |
| IRFI740GPBF |
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Hersteller: VISHAY
IRFI740GPBF THT N channel transistors
IRFI740GPBF THT N channel transistors
auf Bestellung 1311 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 93+ | 0.77 EUR |
| 99+ | 0.73 EUR |
| IRFI830GPBF |
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Hersteller: VISHAY
IRFI830GPBF THT N channel transistors
IRFI830GPBF THT N channel transistors
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 75+ | 0.96 EUR |
| 80+ | 0.9 EUR |











