| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRFR430APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 20A Power dissipation: 110W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1176 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9014PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1519 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9024PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Kind of package: tube Case: DPAK; TO252 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -35A Drain current: -5.6A Gate charge: 19nC On-state resistance: 0.28Ω Gate-source voltage: ±20V Power dissipation: 42W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 920 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9110PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 802 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 143 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1557 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9310PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 685 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9310TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2215 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFRC20PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2070 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFS11N50APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 181 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFS9N60APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Gate charge: 49nC On-state resistance: 0.75Ω Gate-source voltage: ±30V Power dissipation: 170W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFSL11N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 190W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 459 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU024PBF | VISHAY |
IRFU024PBF THT N channel transistors |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU120PBF | VISHAY |
IRFU120PBF THT N channel transistors |
auf Bestellung 919 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU220PBF | VISHAY |
IRFU220PBF THT N channel transistors |
auf Bestellung 104 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU310PBF | VISHAY |
IRFU310PBF THT N channel transistors |
auf Bestellung 1495 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU320PBF | VISHAY |
IRFU320PBF THT N channel transistors |
auf Bestellung 593 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU420PBF | VISHAY |
IRFU420PBF THT N channel transistors |
auf Bestellung 1260 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU9014PBF | VISHAY |
IRFU9014PBF THT P channel transistors |
auf Bestellung 838 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFU9024PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251 Kind of package: tube Case: IPAK; TO251 Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Gate charge: 19nC On-state resistance: 0.28Ω Gate-source voltage: ±20V Power dissipation: 42W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 673 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU9120PBF | VISHAY |
IRFU9120PBF THT P channel transistors |
auf Bestellung 1629 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU9310PBF | VISHAY |
IRFU9310PBF THT P channel transistors |
auf Bestellung 2068 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFUC20PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 188 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ14PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.2A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 939 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ24PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 467 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 186 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ48RPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 291A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 274 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL510PBF | VISHAY |
IRL510PBF THT N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 158 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 779 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLI640GPBF | VISHAY |
IRLI640GPBF THT N channel transistors |
auf Bestellung 358 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLIZ44GPBF | VISHAY |
IRLIZ44GPBF THT N channel transistors |
auf Bestellung 272 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 760mΩ Gate charge: 6.1nC Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2551 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR110PBF | VISHAY |
IRLR110PBF SMD N channel transistors |
auf Bestellung 548 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR120TRPBF | VISHAY |
IRLR120TRPBF SMD N channel transistors |
auf Bestellung 992 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLU014PBF | VISHAY |
IRLU014PBF THT N channel transistors |
auf Bestellung 1820 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLU110PBF | VISHAY |
IRLU110PBF THT N channel transistors |
auf Bestellung 1700 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Mounting: THT Kind of channel: enhancement Gate-source voltage: ±10V Kind of package: tube Gate charge: 66nC On-state resistance: 28mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1042 Stücke: Lieferzeit 7-14 Tag (e) |
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K104K10X7RF5UH5 | VISHAY |
Category: Ceramic capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Mounting: THT Tolerance: ±10% Operating temperature: -55...125°C Terminal pitch: 5mm Dielectric: X7R Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10789 Stücke: Lieferzeit 7-14 Tag (e) |
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K104K10X7RF5UL2 | VISHAY |
Category: Ceramic capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Mounting: THT Tolerance: ±10% Operating temperature: -55...125°C Terminal pitch: 2.5mm Dielectric: X7R Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14213 Stücke: Lieferzeit 7-14 Tag (e) |
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K104K15X7RF5TH5 | VISHAY |
Category: MLCC THT capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2550 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL02-E4/51 | VISHAY |
KBL02-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL04-E4/51 | VISHAY |
KBL04-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBL08-E4/51 | VISHAY |
KBL08-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU4D-E4/51 | VISHAY |
KBU4D-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 204 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU4G-E4/51 | VISHAY |
KBU4G-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 133 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU4K-E4/51 | VISHAY |
KBU4K-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 166 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU6M-E4/51 | VISHAY |
KBU6M-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 278 Stücke: Lieferzeit 7-14 Tag (e) |
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| KBU8D-E4/51 | VISHAY |
KBU8D-E4/51 Flat single phase diode bridge rectif. |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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KBU8G-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 8A Max. forward impulse current: 0.3kA Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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KBU8J-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 0.3kA Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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KBU8K-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 0.3kA Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
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KBU8M-M3/P | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 0.3kA Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: tube Max. forward voltage: 0.98V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1200 Stücke: Lieferzeit 7-14 Tag (e) |
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KMKP 900-2,2IA | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 2.2uF; 900VAC; 16A; Ø35x72mm; ±10% Type of capacitor: polypropylene Capacitance: 2.2µF Operating voltage: 900V AC Tolerance: ±10% Body dimensions: Ø35x72mm Diameter: 35mm Height: 72mm Max. operating current: 16A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 62 Stücke: Lieferzeit 7-14 Tag (e) |
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| LH1540AT | VISHAY |
LH1540AT One Phase Solid State Relays |
auf Bestellung 1481 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL101A-GS08 | VISHAY |
LL101A-GS08 SMD Schottky diodes |
auf Bestellung 13924 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL101C-GS08 | VISHAY |
LL101C-GS08 SMD Schottky diodes |
auf Bestellung 2097 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL103A-GS08 | VISHAY |
LL103A-GS08 SMD Schottky diodes |
auf Bestellung 16285 Stücke: Lieferzeit 7-14 Tag (e) |
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| LL103B-GS08 | VISHAY |
LL103B-GS08 SMD Schottky diodes |
auf Bestellung 2110 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFR430APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1176 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 81+ | 0.88 EUR |
| 89+ | 0.8 EUR |
| 300+ | 0.75 EUR |
| 750+ | 0.72 EUR |
| 2025+ | 0.68 EUR |
| 3000+ | 0.67 EUR |
| IRFR9014PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1519 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 121+ | 0.59 EUR |
| 126+ | 0.57 EUR |
| 150+ | 0.52 EUR |
| 525+ | 0.47 EUR |
| IRFR9024PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -35A
Drain current: -5.6A
Gate charge: 19nC
On-state resistance: 0.28Ω
Gate-source voltage: ±20V
Power dissipation: 42W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -35A
Drain current: -5.6A
Gate charge: 19nC
On-state resistance: 0.28Ω
Gate-source voltage: ±20V
Power dissipation: 42W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 56+ | 1.28 EUR |
| 69+ | 1.05 EUR |
| 100+ | 0.72 EUR |
| 148+ | 0.48 EUR |
| IRFR9110PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 802 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 122+ | 0.59 EUR |
| 24000+ | 0.54 EUR |
| IRFR9220PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 65+ | 1.11 EUR |
| 83+ | 0.87 EUR |
| 90+ | 0.8 EUR |
| 525+ | 0.7 EUR |
| IRFR9220TRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1557 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 250+ | 0.97 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.79 EUR |
| 2000+ | 0.67 EUR |
| 4000+ | 0.55 EUR |
| 6000+ | 0.48 EUR |
| IRFR9310PBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 685 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 90+ | 0.8 EUR |
| 131+ | 0.55 EUR |
| 1050+ | 0.51 EUR |
| IRFR9310TRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2215 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 50+ | 1.45 EUR |
| 56+ | 1.28 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.55 EUR |
| IRFRC20PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2070 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 101+ | 0.71 EUR |
| 142+ | 0.5 EUR |
| IRFS11N50APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 28+ | 2.56 EUR |
| 31+ | 2.33 EUR |
| 50+ | 1.93 EUR |
| IRFS9N60APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Gate charge: 49nC
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 170W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Gate charge: 49nC
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 170W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 50+ | 1.79 EUR |
| IRFSL11N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 34+ | 2.12 EUR |
| 38+ | 1.89 EUR |
| 50+ | 1.69 EUR |
| 250+ | 1.57 EUR |
| IRFU024PBF |
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Hersteller: VISHAY
IRFU024PBF THT N channel transistors
IRFU024PBF THT N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 65+ | 1.1 EUR |
| 88+ | 0.82 EUR |
| 1050+ | 0.72 EUR |
| IRFU120PBF | ![]() |
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Hersteller: VISHAY
IRFU120PBF THT N channel transistors
IRFU120PBF THT N channel transistors
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 118+ | 0.61 EUR |
| 125+ | 0.57 EUR |
| 375+ | 0.56 EUR |
| IRFU220PBF |
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Hersteller: VISHAY
IRFU220PBF THT N channel transistors
IRFU220PBF THT N channel transistors
auf Bestellung 104 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 104+ | 0.69 EUR |
| 3000+ | 0.51 EUR |
| IRFU310PBF |
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Hersteller: VISHAY
IRFU310PBF THT N channel transistors
IRFU310PBF THT N channel transistors
auf Bestellung 1495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 170+ | 0.42 EUR |
| 180+ | 0.4 EUR |
| IRFU320PBF |
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Hersteller: VISHAY
IRFU320PBF THT N channel transistors
IRFU320PBF THT N channel transistors
auf Bestellung 593 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.18 EUR |
| 152+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| IRFU420PBF |
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Hersteller: VISHAY
IRFU420PBF THT N channel transistors
IRFU420PBF THT N channel transistors
auf Bestellung 1260 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.98 EUR |
| 153+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| IRFU9014PBF |
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Hersteller: VISHAY
IRFU9014PBF THT P channel transistors
IRFU9014PBF THT P channel transistors
auf Bestellung 838 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.21 EUR |
| 150+ | 0.52 EUR |
| 180+ | 0.4 EUR |
| 191+ | 0.37 EUR |
| IRFU9024PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251
Kind of package: tube
Case: IPAK; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Gate charge: 19nC
On-state resistance: 0.28Ω
Gate-source voltage: ±20V
Power dissipation: 42W
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; 42W; IPAK,TO251
Kind of package: tube
Case: IPAK; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Gate charge: 19nC
On-state resistance: 0.28Ω
Gate-source voltage: ±20V
Power dissipation: 42W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 673 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 90+ | 0.8 EUR |
| 9000+ | 0.64 EUR |
| IRFU9120PBF |
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Hersteller: VISHAY
IRFU9120PBF THT P channel transistors
IRFU9120PBF THT P channel transistors
auf Bestellung 1629 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| IRFU9310PBF |
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Hersteller: VISHAY
IRFU9310PBF THT P channel transistors
IRFU9310PBF THT P channel transistors
auf Bestellung 2068 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.54 EUR |
| 131+ | 0.55 EUR |
| 138+ | 0.52 EUR |
| IRFUC20PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 188 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 2025+ | 0.67 EUR |
| 3000+ | 0.65 EUR |
| IRFZ14PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 939 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 132+ | 0.54 EUR |
| 1000+ | 0.44 EUR |
| IRFZ24PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 467 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 75+ | 0.96 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.6 EUR |
| IRFZ44PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 43+ | 1.69 EUR |
| 57+ | 1.27 EUR |
| 75+ | 0.96 EUR |
| 76+ | 0.94 EUR |
| IRFZ48RPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 291A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 291A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 291A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 274 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 33+ | 2.17 EUR |
| 50+ | 1.89 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.47 EUR |
| IRL510PBF |
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Hersteller: VISHAY
IRL510PBF THT N channel transistors
IRL510PBF THT N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 151+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| IRL640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 158 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.45 EUR |
| 63+ | 1.14 EUR |
| 68+ | 1.06 EUR |
| IRL640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 39+ | 1.87 EUR |
| 57+ | 1.26 EUR |
| IRL640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 779 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 49+ | 1.47 EUR |
| 800+ | 1.13 EUR |
| IRLI640GPBF |
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Hersteller: VISHAY
IRLI640GPBF THT N channel transistors
IRLI640GPBF THT N channel transistors
auf Bestellung 358 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.75 EUR |
| 65+ | 1.12 EUR |
| 68+ | 1.06 EUR |
| IRLIZ44GPBF |
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Hersteller: VISHAY
IRLIZ44GPBF THT N channel transistors
IRLIZ44GPBF THT N channel transistors
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.25 EUR |
| 44+ | 1.66 EUR |
| 46+ | 1.56 EUR |
| IRLL110TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 760mΩ
Gate charge: 6.1nC
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 760mΩ
Gate charge: 6.1nC
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2551 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 106+ | 0.67 EUR |
| 136+ | 0.53 EUR |
| 144+ | 0.5 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.41 EUR |
| 2500+ | 0.36 EUR |
| IRLR110PBF |
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Hersteller: VISHAY
IRLR110PBF SMD N channel transistors
IRLR110PBF SMD N channel transistors
auf Bestellung 548 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.68 EUR |
| 187+ | 0.38 EUR |
| 198+ | 0.36 EUR |
| IRLR120TRPBF |
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Hersteller: VISHAY
IRLR120TRPBF SMD N channel transistors
IRLR120TRPBF SMD N channel transistors
auf Bestellung 992 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.18 EUR |
| 161+ | 0.45 EUR |
| 170+ | 0.42 EUR |
| IRLU014PBF |
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Hersteller: VISHAY
IRLU014PBF THT N channel transistors
IRLU014PBF THT N channel transistors
auf Bestellung 1820 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.94 EUR |
| 166+ | 0.43 EUR |
| 176+ | 0.41 EUR |
| IRLU110PBF |
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Hersteller: VISHAY
IRLU110PBF THT N channel transistors
IRLU110PBF THT N channel transistors
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 192+ | 0.37 EUR |
| 203+ | 0.35 EUR |
| IRLZ44PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1042 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.4 EUR |
| 250+ | 1.27 EUR |
| 500+ | 1.19 EUR |
| 750+ | 1.12 EUR |
| K104K10X7RF5UH5 |
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Hersteller: VISHAY
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 5mm
Dielectric: X7R
Anzahl je Verpackung: 1 Stücke
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 5mm
Dielectric: X7R
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10789 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 345+ | 0.21 EUR |
| 692+ | 0.1 EUR |
| 844+ | 0.085 EUR |
| 1044+ | 0.068 EUR |
| 1124+ | 0.064 EUR |
| 1169+ | 0.061 EUR |
| K104K10X7RF5UL2 |
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Hersteller: VISHAY
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Dielectric: X7R
Anzahl je Verpackung: 1 Stücke
Category: Ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Dielectric: X7R
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14213 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 342+ | 0.21 EUR |
| 474+ | 0.15 EUR |
| 646+ | 0.11 EUR |
| 737+ | 0.097 EUR |
| 960+ | 0.075 EUR |
| 1058+ | 0.068 EUR |
| 2500+ | 0.061 EUR |
| K104K15X7RF5TH5 |
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Hersteller: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Anzahl je Verpackung: 1 Stücke
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2550 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 582+ | 0.12 EUR |
| 884+ | 0.081 EUR |
| 1042+ | 0.069 EUR |
| 1247+ | 0.057 EUR |
| 1386+ | 0.052 EUR |
| 1433+ | 0.05 EUR |
| KBL02-E4/51 |
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Hersteller: VISHAY
KBL02-E4/51 Flat single phase diode bridge rectif.
KBL02-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.73 EUR |
| 33+ | 2.23 EUR |
| 34+ | 2.12 EUR |
| KBL04-E4/51 |
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Hersteller: VISHAY
KBL04-E4/51 Flat single phase diode bridge rectif.
KBL04-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 8+ | 8.94 EUR |
| 22+ | 3.25 EUR |
| 1200+ | 2.13 EUR |
| KBL08-E4/51 |
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Hersteller: VISHAY
KBL08-E4/51 Flat single phase diode bridge rectif.
KBL08-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.68 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| KBU4D-E4/51 |
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Hersteller: VISHAY
KBU4D-E4/51 Flat single phase diode bridge rectif.
KBU4D-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.93 EUR |
| 30+ | 2.4 EUR |
| 32+ | 2.27 EUR |
| 1000+ | 2.25 EUR |
| KBU4G-E4/51 |
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Hersteller: VISHAY
KBU4G-E4/51 Flat single phase diode bridge rectif.
KBU4G-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.19 EUR |
| 27+ | 2.69 EUR |
| 29+ | 2.55 EUR |
| 2500+ | 2.52 EUR |
| KBU4K-E4/51 |
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Hersteller: VISHAY
KBU4K-E4/51 Flat single phase diode bridge rectif.
KBU4K-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.65 EUR |
| 30+ | 2.39 EUR |
| 32+ | 2.26 EUR |
| 5000+ | 2.23 EUR |
| KBU6M-E4/51 |
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Hersteller: VISHAY
KBU6M-E4/51 Flat single phase diode bridge rectif.
KBU6M-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.55 EUR |
| 23+ | 3.15 EUR |
| 25+ | 2.96 EUR |
| 1000+ | 2.89 EUR |
| KBU8D-E4/51 |
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Hersteller: VISHAY
KBU8D-E4/51 Flat single phase diode bridge rectif.
KBU8D-E4/51 Flat single phase diode bridge rectif.
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.81 EUR |
| 22+ | 3.39 EUR |
| 23+ | 3.22 EUR |
| KBU8G-E4/51 |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| KBU8J-E4/51 |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.59 EUR |
| 19+ | 3.89 EUR |
| 25+ | 3.56 EUR |
| 100+ | 3.09 EUR |
| 250+ | 2.77 EUR |
| 500+ | 2.62 EUR |
| KBU8K-E4/51 |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.08 EUR |
| 20+ | 3.69 EUR |
| 21+ | 3.45 EUR |
| 25+ | 3.09 EUR |
| KBU8M-M3/P |
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Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: tube
Max. forward voltage: 0.98V
Anzahl je Verpackung: 1 Stücke
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 300A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 0.3kA
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: tube
Max. forward voltage: 0.98V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.85 EUR |
| 26+ | 2.82 EUR |
| 100+ | 2.39 EUR |
| 200+ | 2.23 EUR |
| 500+ | 2.12 EUR |
| 1200+ | 1.99 EUR |
| 2400+ | 1.83 EUR |
| KMKP 900-2,2IA |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2uF; 900VAC; 16A; Ø35x72mm; ±10%
Type of capacitor: polypropylene
Capacitance: 2.2µF
Operating voltage: 900V AC
Tolerance: ±10%
Body dimensions: Ø35x72mm
Diameter: 35mm
Height: 72mm
Max. operating current: 16A
Anzahl je Verpackung: 1 Stücke
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2uF; 900VAC; 16A; Ø35x72mm; ±10%
Type of capacitor: polypropylene
Capacitance: 2.2µF
Operating voltage: 900V AC
Tolerance: ±10%
Body dimensions: Ø35x72mm
Diameter: 35mm
Height: 72mm
Max. operating current: 16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 67.94 EUR |
| 5+ | 62.59 EUR |
| 10+ | 58.96 EUR |
| 20+ | 57.01 EUR |
| 50+ | 55.86 EUR |
| LH1540AT |
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Hersteller: VISHAY
LH1540AT One Phase Solid State Relays
LH1540AT One Phase Solid State Relays
auf Bestellung 1481 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.22 EUR |
| 41+ | 1.76 EUR |
| 43+ | 1.67 EUR |
| LL101A-GS08 |
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Hersteller: VISHAY
LL101A-GS08 SMD Schottky diodes
LL101A-GS08 SMD Schottky diodes
auf Bestellung 13924 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 181+ | 0.4 EUR |
| 1603+ | 0.045 EUR |
| 1695+ | 0.042 EUR |
| 17500+ | 0.041 EUR |
| LL101C-GS08 |
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Hersteller: VISHAY
LL101C-GS08 SMD Schottky diodes
LL101C-GS08 SMD Schottky diodes
auf Bestellung 2097 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 857+ | 0.084 EUR |
| 1296+ | 0.055 EUR |
| 1370+ | 0.052 EUR |
| LL103A-GS08 |
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Hersteller: VISHAY
LL103A-GS08 SMD Schottky diodes
LL103A-GS08 SMD Schottky diodes
auf Bestellung 16285 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 285+ | 0.25 EUR |
| 1678+ | 0.043 EUR |
| 1774+ | 0.04 EUR |
| LL103B-GS08 |
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Hersteller: VISHAY
LL103B-GS08 SMD Schottky diodes
LL103B-GS08 SMD Schottky diodes
auf Bestellung 2110 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 197+ | 0.36 EUR |
| 1662+ | 0.043 EUR |
| 1761+ | 0.041 EUR |

















