| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRFI840GPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 585 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI9540GPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -7.6A Gate charge: 61nC On-state resistance: 0.2Ω Gate-source voltage: ±20V Power dissipation: 48W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9630GPBF | VISHAY |
IRFI9630GPBF THT P channel transistors |
auf Bestellung 341 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9634GPBF | VISHAY |
IRFI9634GPBF THT P channel transistors |
auf Bestellung 391 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI9640GPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.9A Gate charge: 44nC On-state resistance: 0.5Ω Gate-source voltage: ±20V Power dissipation: 40W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 590 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI9Z34GPBF | VISHAY |
IRFI9Z34GPBF THT P channel transistors |
auf Bestellung 850 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIB6N60APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Gate charge: 49nC On-state resistance: 0.75Ω Gate-source voltage: ±30V Power dissipation: 60W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIBC30GPBF | VISHAY |
IRFIBC30GPBF THT N channel transistors |
auf Bestellung 434 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIBE30GPBF | VISHAY |
IRFIBE30GPBF THT N channel transistors |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIBF20GPBF | VISHAY |
IRFIBF20GPBF THT N channel transistors |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFIZ48GPBF | VISHAY |
IRFIZ48GPBF THT N channel transistors |
auf Bestellung 423 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL014TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1692 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL110TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.96A Pulsed drain current: 12A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 695 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL210TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Pulsed drain current: 7.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 262 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL9014TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.1A Pulsed drain current: -14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5089 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL9110TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.69A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP048RPBF | VISHAY |
IRFP048RPBF THT N channel transistors |
auf Bestellung 437 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP054PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP064PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 227 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP150PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 523 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP244PBF | VISHAY |
IRFP244PBF THT N channel transistors |
auf Bestellung 629 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 284 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Pulsed drain current: 92A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 391 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 414 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP340PBF | VISHAY |
IRFP340PBF THT N channel transistors |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP350PBF | VISHAY |
IRFP350PBF THT N channel transistors |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP440PBF | VISHAY |
IRFP440PBF THT N channel transistors |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP450APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.7A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 519 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP450LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.6A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.6A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 360 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP450PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.7A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 962 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 666 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 435 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 903 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP9140PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of channel: enhancement Gate charge: 61nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 223 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP9240PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 558 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPC40PBF | VISHAY |
IRFPC40PBF THT N channel transistors |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPC50APBF | VISHAY | IRFPC50APBF THT N channel transistors |
auf Bestellung 121 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPC50PBF | VISHAY | IRFPC50PBF THT N channel transistors |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPC60LCPBF | VISHAY |
IRFPC60LCPBF THT N channel transistors |
auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPC60PBF | VISHAY |
IRFPC60PBF THT N channel transistors |
auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPE40PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPE50PBF | VISHAY |
IRFPE50PBF THT N channel transistors |
auf Bestellung 106 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPF50PBF | VISHAY |
IRFPF50PBF THT N channel transistors |
auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPG30PBF | VISHAY |
IRFPG30PBF THT N channel transistors |
auf Bestellung 462 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPG40PBF | VISHAY |
IRFPG40PBF THT N channel transistors |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFPG50PBF | VISHAY |
IRFPG50PBF THT N channel transistors |
auf Bestellung 615 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR014PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 471 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR024PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 279 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR110PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: SMD Polarisation: unipolar Gate charge: 8.3nC On-state resistance: 0.54Ω Drain current: 2.7A Pulsed drain current: 17A Gate-source voltage: ±20V Power dissipation: 25W Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4842 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR120PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Kind of package: tube Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 16nC On-state resistance: 0.27Ω Drain current: 4.9A Gate-source voltage: ±20V Pulsed drain current: 31A Power dissipation: 42W Drain-source voltage: 100V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 433 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR210PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 238 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR220PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 254 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR224PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 2.4A; Idm: 15A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.4A Pulsed drain current: 15A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.1Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1225 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR310PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.7A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 374 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR320PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Pulsed drain current: 12A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 714 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR320TRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Pulsed drain current: 12A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1569 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR420APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.1A Pulsed drain current: 10A Power dissipation: 83W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1026 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR420PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 349 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR420TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1855 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI840GPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 585 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.52 EUR |
| 500+ | 1.4 EUR |
| IRFI9540GPBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Gate charge: 61nC
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 48W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Gate charge: 61nC
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 48W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.88 EUR |
| 24+ | 3.06 EUR |
| 27+ | 2.67 EUR |
| 50+ | 2.06 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.74 EUR |
| 1000+ | 1.63 EUR |
| IRFI9630GPBF |
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Hersteller: VISHAY
IRFI9630GPBF THT P channel transistors
IRFI9630GPBF THT P channel transistors
auf Bestellung 341 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.05 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| IRFI9634GPBF |
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Hersteller: VISHAY
IRFI9634GPBF THT P channel transistors
IRFI9634GPBF THT P channel transistors
auf Bestellung 391 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.07 EUR |
| 77+ | 0.93 EUR |
| 82+ | 0.87 EUR |
| IRFI9640GPBF | ![]() |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.9A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.9A
Gate charge: 44nC
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 50+ | 1.49 EUR |
| 500+ | 1.4 EUR |
| 2000+ | 1.33 EUR |
| IRFI9Z34GPBF |
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Hersteller: VISHAY
IRFI9Z34GPBF THT P channel transistors
IRFI9Z34GPBF THT P channel transistors
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| IRFIB6N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Gate charge: 49nC
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 60W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Gate charge: 49nC
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 60W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 28+ | 2.6 EUR |
| 50+ | 2.22 EUR |
| 100+ | 2.04 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.66 EUR |
| 750+ | 1.56 EUR |
| IRFIBC30GPBF |
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Hersteller: VISHAY
IRFIBC30GPBF THT N channel transistors
IRFIBC30GPBF THT N channel transistors
auf Bestellung 434 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 64+ | 1.13 EUR |
| 68+ | 1.06 EUR |
| IRFIBE30GPBF |
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Hersteller: VISHAY
IRFIBE30GPBF THT N channel transistors
IRFIBE30GPBF THT N channel transistors
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
| 57+ | 1.27 EUR |
| IRFIBF20GPBF |
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Hersteller: VISHAY
IRFIBF20GPBF THT N channel transistors
IRFIBF20GPBF THT N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.49 EUR |
| 40+ | 1.79 EUR |
| 2000+ | 1.47 EUR |
| IRFIZ48GPBF |
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Hersteller: VISHAY
IRFIZ48GPBF THT N channel transistors
IRFIZ48GPBF THT N channel transistors
auf Bestellung 423 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| IRFL014TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1692 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 114+ | 0.63 EUR |
| 123+ | 0.58 EUR |
| 144+ | 0.5 EUR |
| 200+ | 0.47 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.41 EUR |
| IRFL110TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 695 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 103+ | 0.7 EUR |
| 123+ | 0.58 EUR |
| 128+ | 0.56 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.34 EUR |
| IRFL210TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 148+ | 0.48 EUR |
| 250+ | 0.44 EUR |
| IRFL9014TRPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5089 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 96+ | 0.75 EUR |
| 111+ | 0.64 EUR |
| 120+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.46 EUR |
| 2500+ | 0.4 EUR |
| IRFL9110TRPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.31 EUR |
| 5000+ | 0.3 EUR |
| IRFP048RPBF |
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Hersteller: VISHAY
IRFP048RPBF THT N channel transistors
IRFP048RPBF THT N channel transistors
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.35 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| IRFP054PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 19+ | 3.83 EUR |
| 25+ | 3.47 EUR |
| 50+ | 3.23 EUR |
| 100+ | 3.03 EUR |
| 125+ | 2.97 EUR |
| 250+ | 2.82 EUR |
| IRFP064PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 17+ | 4.33 EUR |
| 20+ | 3.75 EUR |
| 25+ | 3.55 EUR |
| 100+ | 3.2 EUR |
| 200+ | 3 EUR |
| 500+ | 2.8 EUR |
| IRFP150PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 523 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.92 EUR |
| 22+ | 3.35 EUR |
| 24+ | 3.06 EUR |
| 27+ | 2.7 EUR |
| 50+ | 2.49 EUR |
| 100+ | 2.33 EUR |
| 125+ | 2.29 EUR |
| IRFP22N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.46 EUR |
| 100+ | 3.35 EUR |
| 500+ | 2.79 EUR |
| IRFP244PBF |
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Hersteller: VISHAY
IRFP244PBF THT N channel transistors
IRFP244PBF THT N channel transistors
auf Bestellung 629 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.09 EUR |
| 50+ | 1.43 EUR |
| 53+ | 1.36 EUR |
| IRFP250PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.3 EUR |
| 21+ | 3.46 EUR |
| 30+ | 2.39 EUR |
| 38+ | 1.93 EUR |
| 5000+ | 1.79 EUR |
| IRFP254PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 391 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.6 EUR |
| 24+ | 2.99 EUR |
| 26+ | 2.76 EUR |
| 50+ | 2.57 EUR |
| 100+ | 2.4 EUR |
| 125+ | 2.35 EUR |
| 250+ | 2.16 EUR |
| IRFP260PBF | ![]() |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 414 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.96 EUR |
| 21+ | 3.55 EUR |
| 25+ | 3.09 EUR |
| IRFP340PBF |
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Hersteller: VISHAY
IRFP340PBF THT N channel transistors
IRFP340PBF THT N channel transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.75 EUR |
| 40+ | 1.83 EUR |
| 42+ | 1.73 EUR |
| IRFP350PBF |
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Hersteller: VISHAY
IRFP350PBF THT N channel transistors
IRFP350PBF THT N channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.22 EUR |
| 35+ | 2.04 EUR |
| IRFP440PBF |
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Hersteller: VISHAY
IRFP440PBF THT N channel transistors
IRFP440PBF THT N channel transistors
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.32 EUR |
| 33+ | 2.22 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| IRFP450APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 519 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.16 EUR |
| 21+ | 3.45 EUR |
| 25+ | 3.03 EUR |
| 50+ | 2.76 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.35 EUR |
| IRFP450LCPBF | ![]() |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.6A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.6A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.6A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.6A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 360 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.15 EUR |
| 28+ | 2.62 EUR |
| 32+ | 2.27 EUR |
| 35+ | 2.09 EUR |
| 50+ | 2.02 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.84 EUR |
| IRFP450PBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 962 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.23 EUR |
| 27+ | 2.67 EUR |
| 33+ | 2.22 EUR |
| 45+ | 1.62 EUR |
| 100+ | 1.53 EUR |
| IRFP460APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 666 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.29 EUR |
| 16+ | 4.59 EUR |
| 17+ | 4.35 EUR |
| 25+ | 4.05 EUR |
| 50+ | 3.85 EUR |
| 100+ | 3.55 EUR |
| 375+ | 2.72 EUR |
| IRFP460LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 435 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.23 EUR |
| 13+ | 5.66 EUR |
| 14+ | 5.35 EUR |
| 25+ | 4.92 EUR |
| 100+ | 4.28 EUR |
| 250+ | 3.83 EUR |
| 500+ | 3.49 EUR |
| IRFP460PBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 903 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.63 EUR |
| 18+ | 4 EUR |
| 21+ | 3.46 EUR |
| 25+ | 2.89 EUR |
| 100+ | 2.73 EUR |
| IRFP9140PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.59 EUR |
| 25+ | 2.96 EUR |
| 27+ | 2.66 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.19 EUR |
| 250+ | 1.89 EUR |
| 375+ | 1.74 EUR |
| IRFP9240PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 558 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 34+ | 2.14 EUR |
| 38+ | 1.9 EUR |
| 46+ | 1.56 EUR |
| 52+ | 1.4 EUR |
| 100+ | 1.34 EUR |
| IRFPC40PBF |
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Hersteller: VISHAY
IRFPC40PBF THT N channel transistors
IRFPC40PBF THT N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.02 EUR |
| 39+ | 1.84 EUR |
| 40+ | 1.79 EUR |
| IRFPC50APBF |
Hersteller: VISHAY
IRFPC50APBF THT N channel transistors
IRFPC50APBF THT N channel transistors
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.16 EUR |
| 31+ | 2.36 EUR |
| 33+ | 2.23 EUR |
| IRFPC50PBF |
Hersteller: VISHAY
IRFPC50PBF THT N channel transistors
IRFPC50PBF THT N channel transistors
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.79 EUR |
| 31+ | 2.35 EUR |
| 33+ | 2.22 EUR |
| IRFPC60LCPBF |
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Hersteller: VISHAY
IRFPC60LCPBF THT N channel transistors
IRFPC60LCPBF THT N channel transistors
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.41 EUR |
| 21+ | 3.47 EUR |
| 22+ | 3.29 EUR |
| 1000+ | 3.19 EUR |
| IRFPC60PBF |
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Hersteller: VISHAY
IRFPC60PBF THT N channel transistors
IRFPC60PBF THT N channel transistors
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.45 EUR |
| 22+ | 3.27 EUR |
| 24+ | 3.1 EUR |
| IRFPE40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.96 EUR |
| 100+ | 2.47 EUR |
| 200+ | 2.25 EUR |
| IRFPE50PBF |
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Hersteller: VISHAY
IRFPE50PBF THT N channel transistors
IRFPE50PBF THT N channel transistors
auf Bestellung 106 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 26+ | 2.8 EUR |
| 28+ | 2.62 EUR |
| 29+ | 2.47 EUR |
| IRFPF50PBF |
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Hersteller: VISHAY
IRFPF50PBF THT N channel transistors
IRFPF50PBF THT N channel transistors
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 24+ | 3.05 EUR |
| 25+ | 2.87 EUR |
| 1500+ | 2.8 EUR |
| IRFPG30PBF |
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Hersteller: VISHAY
IRFPG30PBF THT N channel transistors
IRFPG30PBF THT N channel transistors
auf Bestellung 462 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 42+ | 1.73 EUR |
| 44+ | 1.63 EUR |
| IRFPG40PBF |
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Hersteller: VISHAY
IRFPG40PBF THT N channel transistors
IRFPG40PBF THT N channel transistors
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.15 EUR |
| 30+ | 2.46 EUR |
| 31+ | 2.32 EUR |
| IRFPG50PBF |
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Hersteller: VISHAY
IRFPG50PBF THT N channel transistors
IRFPG50PBF THT N channel transistors
auf Bestellung 615 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.83 EUR |
| 32+ | 2.27 EUR |
| 34+ | 2.16 EUR |
| IRFR014PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 471 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 60+ | 1.21 EUR |
| 73+ | 0.98 EUR |
| 95+ | 0.76 EUR |
| 112+ | 0.64 EUR |
| 150+ | 0.52 EUR |
| 225+ | 0.5 EUR |
| IRFR024PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 279 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 96+ | 0.75 EUR |
| 123+ | 0.58 EUR |
| 150+ | 0.53 EUR |
| 300+ | 0.51 EUR |
| IRFR110PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4842 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 525+ | 0.4 EUR |
| 1050+ | 0.38 EUR |
| 1500+ | 0.37 EUR |
| 2025+ | 0.36 EUR |
| 3000+ | 0.35 EUR |
| IRFR120PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 16nC
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Pulsed drain current: 31A
Power dissipation: 42W
Drain-source voltage: 100V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 16nC
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Pulsed drain current: 31A
Power dissipation: 42W
Drain-source voltage: 100V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 433 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 128+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 525+ | 0.49 EUR |
| 1050+ | 0.47 EUR |
| 3000+ | 0.45 EUR |
| 6000+ | 0.43 EUR |
| IRFR210PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 128+ | 0.56 EUR |
| 138+ | 0.52 EUR |
| 525+ | 0.49 EUR |
| 6000+ | 0.45 EUR |
| IRFR220PBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 103+ | 0.7 EUR |
| 139+ | 0.52 EUR |
| 155+ | 0.46 EUR |
| 300+ | 0.43 EUR |
| 525+ | 0.4 EUR |
| IRFR224PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.4A; Idm: 15A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.4A; Idm: 15A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1225 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 116+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 143+ | 0.5 EUR |
| 300+ | 0.46 EUR |
| IRFR310PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 374 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 128+ | 0.56 EUR |
| 1050+ | 0.52 EUR |
| IRFR320PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 103+ | 0.7 EUR |
| 133+ | 0.54 EUR |
| IRFR320TRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1569 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 106+ | 0.68 EUR |
| 125+ | 0.57 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.49 EUR |
| 3000+ | 0.47 EUR |
| IRFR420APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 83W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 83W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1026 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 50+ | 1.45 EUR |
| 59+ | 1.22 EUR |
| 73+ | 0.98 EUR |
| 83+ | 0.86 EUR |
| 88+ | 0.81 EUR |
| 150+ | 0.75 EUR |
| IRFR420PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 349 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 109+ | 0.66 EUR |
| 127+ | 0.57 EUR |
| 150+ | 0.54 EUR |
| 525+ | 0.51 EUR |
| 1500+ | 0.49 EUR |
| IRFR420TRPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1855 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 85+ | 0.84 EUR |
| 104+ | 0.69 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.46 EUR |
| 4000+ | 0.42 EUR |









