| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RCA060330K9FKEC | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; 30.9kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 30.9kΩ Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW060330K9FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 30.9kΩ; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 30.9kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Body dimensions: 1.55x0.85x0.45mm Temperature coefficient: 100ppm/°C Quantity in set/package: 5000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW060330K9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 30.9kΩ; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 30.9kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Body dimensions: 0.85x1.55x0.45mm Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMAJ33CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Peak pulse power dissipation: 0.4kW Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 805 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMAJ33CAHE3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WSR2R0500FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 50mΩ; SMD; 4527; 2W; ±1%; 11.56x6.98x2.41mm Type of resistor: metal strip Resistance: 50mΩ Mounting: SMD Case - inch: 4527 Power: 2W Tolerance: ±1% Body dimensions: 11.56x6.98x2.41mm Operating temperature: -65...275°C Temperature coefficient: 75ppm/°C Roll diameter max.: 330mm Conform to the norm: AEC-Q200 Quantity in set/package: 1500pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WSR2R5000FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 500mΩ; SMD; 4527; 2W; ±1%; 11.56x6.98x2.41mm Type of resistor: metal strip Resistance: 0.5Ω Mounting: SMD Case - inch: 4527 Power: 2W Tolerance: ±1% Body dimensions: 11.56x6.98x2.41mm Operating temperature: -65...275°C Temperature coefficient: 75ppm/°C Roll diameter max.: 330mm Conform to the norm: AEC-Q200 Quantity in set/package: 1500pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WSR2R1000FEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 4527; 100mΩ; 2W; ±1%; -65÷275°C; 75ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 4527 Resistance: 0.1Ω Power: 2W Tolerance: ±1% Operating temperature: -65...275°C Temperature coefficient: 75ppm/°C Conform to the norm: AEC-Q200 Case - mm: 11470 |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BYV27-200-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward impulse current: 50A Case: SOD57 Kind of package: Ammo Pack Max. forward voltage: 1.07V Max. load current: 15A Leakage current: 0.15mA Reverse recovery time: 25ns |
auf Bestellung 13359 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BYV27-200-TR | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 1.07V; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.07V Max. load current: 2A Leakage current: 1µA Reverse recovery time: 25ns |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SIHG80N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Power dissipation: 520W Case: TO247AC On-state resistance: 30mΩ Mounting: THT Gate charge: 443nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 268A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIHG80N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Power dissipation: 520W Case: TO247AC On-state resistance: 32mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 254A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIHG080N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 227W Case: TO247AC On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 96A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIHH080N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 184W Case: PowerPAK® 8x8L On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 96A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SIHA180N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 33W Case: TO220FP On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHB180N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 156W Case: D2PAK; TO263 On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 44A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHD180N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 156W Case: DPAK; TO252 On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHG180N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 156W Case: TO247AC On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIHH180N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 114W Case: PowerPAK® 8x8L On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 44A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SIHP180N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 156W Case: TO220AB On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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293D336X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
auf Bestellung 4293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5404-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: 13 inch reel Max. forward voltage: 1.2V Leakage current: 0.5mA Manufacturer standard package: 1400pcs. Capacitance: 30pF |
auf Bestellung 3142 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DG212BDY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube Mounting: SMD Supply voltage: 4.5...22V; 4.5...25V Type of integrated circuit: analog switch Resistance: 85Ω Kind of package: tube Output configuration: SPST-NO Case: SO16 Number of channels: 4 |
auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DG212BDQ-T1-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V Mounting: SMD Supply voltage: 4.5...22V; 4.5...25V Type of integrated circuit: analog switch Resistance: 85Ω Kind of package: reel; tape Output configuration: SPST-NO Case: TSSOP16 Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DG212BDY-T1-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape Mounting: SMD Supply voltage: 7...22V; 13...36V Type of integrated circuit: analog switch Resistance: 85Ω Kind of package: reel; tape Output configuration: SPST-NO Case: SO16 Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MAL209327681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 680uF; 450VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 450V DC Body dimensions: Ø35x50mm Tolerance: ±20% Service life: 2000h Operating temperature: -25...85°C Height: 50mm Diameter: 35mm Terminal pitch: 10mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TS53YL102MR10 | VISHAY |
Category: Single turn SMD trimmers Description: Potentiometer: mounting; 1kΩ; single turn; 250mW; SMD; ±20%; linear Resistance: 1kΩ Mounting: SMD Power: 0.25W Tolerance: ±20% Operating voltage: 200V Body dimensions: 5x5x2.7mm Leads: YL Track material: cermet Operating temperature: -55...155°C Mechanical rotation angle: 270 ±10° Characteristics: linear Kind of potentiometer: single turn Temperature coefficient: 100ppm/°C Torque: 1.5Ncm IP rating: IP67 Electrical rotation angle: 220 ±15° Type of potentiometer: mounting |
auf Bestellung 1033 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TS53YL502MR10 | VISHAY |
Category: Single turn SMD trimmers Description: Potentiometer: mounting; 5kΩ; single turn; 250mW; SMD; ±20%; linear Type of potentiometer: mounting Resistance: 5kΩ Kind of potentiometer: single turn Power: 0.25W Tolerance: ±20% Characteristics: linear Body dimensions: 5x5x2.7mm Mounting: SMD Temperature coefficient: 100ppm/°C Track material: cermet IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...155°C Operating voltage: 200V Electrical rotation angle: 220 ±15° Leads: YL Mechanical rotation angle: 270 ±10° |
auf Bestellung 1794 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF644SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF644PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF644STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF644STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW060351R0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 51Ω; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 51Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 3450 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCT06030C7509FP50S | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 75Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V Resistance: 75Ω Tolerance: ±1% Power: 0.125W Mounting: SMD Operating voltage: 75V Temperature coefficient: 50ppm/°C Case - inch: 0603 Operating temperature: -55...155°C Type of resistor: thin film Manufacturer series: MCT0603 Version: 0 Roll diameter max.: 180mm Case - mm: 1608 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW06035K10FKEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 5.1kΩ; SMD; 0603; 330mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 5.1kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.33W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 1.6x0.85x0.45mm Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW12065K10FKEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 5.1kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.75W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 3.2x1.6x0.6mm Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW060330K0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V Type of resistor: thick film Resistance: 30kΩ Mounting: SMD Power: 0.1W Tolerance: ±1% Manufacturer series: CRCW0603 Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...155°C |
auf Bestellung 31594 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCT06030D3002DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 30kΩ; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 30kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Roll diameter max.: 180mm Manufacturer series: MCT0603 Version: 0 |
auf Bestellung 8290 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CRCW0603330KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 330kΩ; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 0.33MΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 36100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW0201330KFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 330kΩ; SMD; 0201; 50mW; ±1%; 30V; -55÷155°C Type of resistor: thick film Resistance: 0.33MΩ Mounting: SMD Case - inch: 0201 Case - mm: 0603 Power: 50mW Tolerance: ±1% Operating voltage: 30V Operating temperature: -55...155°C |
auf Bestellung 4470 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW060330K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 30kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GRC00PK4721J00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4700uF; 63VDC; Ø25x40mm; ±20%; 2000h Type of capacitor: electrolytic Capacitance: 4.7mF Operating voltage: 63V DC Body dimensions: Ø25x40mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI4825DDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.9A Pulsed drain current: -60A Power dissipation: 5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AC05000001000JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; 100Ω; THT; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm Type of resistor: wire-wound Resistance: 100Ω Mounting: THT Power: 5W Tolerance: ±5% Body dimensions: Ø7.5x18mm Length: 18mm Leads: axial Conform to the norm: AEC-Q200 Diameter: 7.5mm |
auf Bestellung 336 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SM6T6V8A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Manufacturer series: SM6T Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 13460 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SM6T6V8A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1mA Kind of package: 13 inch reel; tape Manufacturer series: SM6T Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFI9540GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -7.6A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A220JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603 Mounting: SMD Case - inch: 0603 Case - mm: 1608 Capacitance: 22pF Operating temperature: -55...125°C Operating voltage: 50V Tolerance: ±5% Kind of capacitor: MLCC Dielectric: C0G (NP0) Type of capacitor: ceramic |
auf Bestellung 6458 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT42-TAP | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.65V; 200mW Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: DO35 Max. forward voltage: 0.65V Max. load current: 0.5A Max. forward impulse current: 4A Kind of package: Ammo Pack Power dissipation: 0.2W Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAT42W-E3-18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 300mA; 5ns; 230mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 4A Reverse recovery time: 5ns Power dissipation: 0.23W Leakage current: 0.5µA Capacitance: 7pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAT42-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; DO35; 30V; 200mA; 5ns Type of diode: Schottky switching Max. off-state voltage: 30V Load current: 0.2A Case: DO35 Max. forward impulse current: 4A Reverse recovery time: 5ns Leakage current: 0.5µA Capacitance: 7pF |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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GRC00DD3311HTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 330uF; 50VDC; Ø10x16mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 50V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
auf Bestellung 393 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MAL214097112E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 50VDC; 12.5x12.5x16mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 50V DC Body dimensions: 12.5x12.5x16mm Tolerance: ±20% Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR110TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR110TRLPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW080510R0JNEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 10Ω; SMD; 0805; 0.125W; ±5%; 150V; -55÷155°C Type of resistor: thick film Resistance: 10Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
auf Bestellung 2515 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW080510R0JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 10Ω; SMD; 0805; 0.125W; ±5%; CRCW0805; 150V Type of resistor: thick film Resistance: 10Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C Manufacturer series: CRCW0805 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIHP10N40D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB Mounting: THT Pulsed drain current: 23A Power dissipation: 147W Gate charge: 30nC Polarisation: unipolar Drain current: 6A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220AB On-state resistance: 0.6Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RCA0603620KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 620kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 620kΩ Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RCA060330K9FKEC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 30.9kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30.9kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 30.9kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30.9kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
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| CRCW060330K9FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 30.9kΩ; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30.9kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Body dimensions: 1.55x0.85x0.45mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 30.9kΩ; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30.9kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Body dimensions: 1.55x0.85x0.45mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| CRCW060330K9FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 30.9kΩ; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30.9kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Body dimensions: 0.85x1.55x0.45mm
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 30.9kΩ; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30.9kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Body dimensions: 0.85x1.55x0.45mm
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
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| SMAJ33CA-E3/61 |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.4kW
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.4kW
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 805 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ33CAHE3_A/H |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| WSR2R0500FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 50mΩ; SMD; 4527; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Resistance: 50mΩ
Mounting: SMD
Case - inch: 4527
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Quantity in set/package: 1500pcs.
Category: SMD resistors
Description: Resistor: metal strip; 50mΩ; SMD; 4527; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Resistance: 50mΩ
Mounting: SMD
Case - inch: 4527
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Quantity in set/package: 1500pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| WSR2R5000FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 500mΩ; SMD; 4527; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Resistance: 0.5Ω
Mounting: SMD
Case - inch: 4527
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Quantity in set/package: 1500pcs.
Category: SMD resistors
Description: Resistor: metal strip; 500mΩ; SMD; 4527; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Resistance: 0.5Ω
Mounting: SMD
Case - inch: 4527
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Quantity in set/package: 1500pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| WSR2R1000FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 4527; 100mΩ; 2W; ±1%; -65÷275°C; 75ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 4527
Resistance: 0.1Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Case - mm: 11470
Category: SMD resistors
Description: Resistor: thick film; SMD; 4527; 100mΩ; 2W; ±1%; -65÷275°C; 75ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 4527
Resistance: 0.1Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Case - mm: 11470
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV27-200-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 50A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.07V
Max. load current: 15A
Leakage current: 0.15mA
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 50A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.07V
Max. load current: 15A
Leakage current: 0.15mA
Reverse recovery time: 25ns
auf Bestellung 13359 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV27-200-TR |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 1.07V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.07V
Max. load current: 2A
Leakage current: 1µA
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 1.07V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.07V
Max. load current: 2A
Leakage current: 1µA
Reverse recovery time: 25ns
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHG80N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 520W
Case: TO247AC
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 520W
Case: TO247AC
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG80N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 520W
Case: TO247AC
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 254A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 520W
Case: TO247AC
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 254A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG080N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO247AC
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 96A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO247AC
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 96A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHH080N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 184W
Case: PowerPAK® 8x8L
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 96A
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 184W
Case: PowerPAK® 8x8L
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 96A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHA180N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB180N60E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: D2PAK; TO263
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: D2PAK; TO263
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHD180N60E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: DPAK; TO252
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: DPAK; TO252
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG180N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: TO247AC
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: TO247AC
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHH180N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 114W
Case: PowerPAK® 8x8L
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 114W
Case: PowerPAK® 8x8L
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP180N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: TO220AB
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 156W
Case: TO220AB
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 293D336X9016D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 4293 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5404-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Manufacturer standard package: 1400pcs.
Capacitance: 30pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Manufacturer standard package: 1400pcs.
Capacitance: 30pF
auf Bestellung 3142 Stücke:
Lieferzeit 14-21 Tag (e)
| DG212BDY-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube
Mounting: SMD
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: tube
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube
Mounting: SMD
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: tube
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
| DG212BDQ-T1-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V
Mounting: SMD
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: TSSOP16
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V
Mounting: SMD
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: TSSOP16
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DG212BDY-T1-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape
Mounting: SMD
Supply voltage: 7...22V; 13...36V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape
Mounting: SMD
Supply voltage: 7...22V; 13...36V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MAL209327681E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -25...85°C
Height: 50mm
Diameter: 35mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -25...85°C
Height: 50mm
Diameter: 35mm
Terminal pitch: 10mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| TS53YL102MR10 |
|
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 1kΩ; single turn; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Mounting: SMD
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Body dimensions: 5x5x2.7mm
Leads: YL
Track material: cermet
Operating temperature: -55...155°C
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
IP rating: IP67
Electrical rotation angle: 220 ±15°
Type of potentiometer: mounting
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 1kΩ; single turn; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Mounting: SMD
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Body dimensions: 5x5x2.7mm
Leads: YL
Track material: cermet
Operating temperature: -55...155°C
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
IP rating: IP67
Electrical rotation angle: 220 ±15°
Type of potentiometer: mounting
auf Bestellung 1033 Stücke:
Lieferzeit 14-21 Tag (e)
| TS53YL502MR10 |
|
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 5kΩ; single turn; 250mW; SMD; ±20%; linear
Type of potentiometer: mounting
Resistance: 5kΩ
Kind of potentiometer: single turn
Power: 0.25W
Tolerance: ±20%
Characteristics: linear
Body dimensions: 5x5x2.7mm
Mounting: SMD
Temperature coefficient: 100ppm/°C
Track material: cermet
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...155°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Leads: YL
Mechanical rotation angle: 270 ±10°
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 5kΩ; single turn; 250mW; SMD; ±20%; linear
Type of potentiometer: mounting
Resistance: 5kΩ
Kind of potentiometer: single turn
Power: 0.25W
Tolerance: ±20%
Characteristics: linear
Body dimensions: 5x5x2.7mm
Mounting: SMD
Temperature coefficient: 100ppm/°C
Track material: cermet
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...155°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Leads: YL
Mechanical rotation angle: 270 ±10°
auf Bestellung 1794 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF644SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF644PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF644STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IRF644STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| CRCW060351R0FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 51Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 51Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
| MCT06030C7509FP50S |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 75Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Resistance: 75Ω
Tolerance: ±1%
Power: 0.125W
Mounting: SMD
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Case - inch: 0603
Operating temperature: -55...155°C
Type of resistor: thin film
Manufacturer series: MCT0603
Version: 0
Roll diameter max.: 180mm
Case - mm: 1608
Category: SMD resistors
Description: Resistor: thin film; 75Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Resistance: 75Ω
Tolerance: ±1%
Power: 0.125W
Mounting: SMD
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Case - inch: 0603
Operating temperature: -55...155°C
Type of resistor: thin film
Manufacturer series: MCT0603
Version: 0
Roll diameter max.: 180mm
Case - mm: 1608
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| CRCW06035K10FKEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 0603; 330mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.33W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 1.6x0.85x0.45mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 0603; 330mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.33W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 1.6x0.85x0.45mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| CRCW12065K10FKEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.6mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.6mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| CRCW060330K0FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 30kΩ
Mounting: SMD
Power: 0.1W
Tolerance: ±1%
Manufacturer series: CRCW0603
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 30kΩ
Mounting: SMD
Power: 0.1W
Tolerance: ±1%
Manufacturer series: CRCW0603
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...155°C
auf Bestellung 31594 Stücke:
Lieferzeit 14-21 Tag (e)
| MCT06030D3002DP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 30kΩ; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 30kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Version: 0
Category: SMD resistors
Description: Resistor: thin film; 30kΩ; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 30kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Version: 0
auf Bestellung 8290 Stücke:
Lieferzeit 14-21 Tag (e)
| CRCW0603330KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 330kΩ; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 0.33MΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 330kΩ; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 0.33MΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 36100 Stücke:
Lieferzeit 14-21 Tag (e)
| CRCW0201330KFKTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 330kΩ; SMD; 0201; 50mW; ±1%; 30V; -55÷155°C
Type of resistor: thick film
Resistance: 0.33MΩ
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Power: 50mW
Tolerance: ±1%
Operating voltage: 30V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 330kΩ; SMD; 0201; 50mW; ±1%; 30V; -55÷155°C
Type of resistor: thick film
Resistance: 0.33MΩ
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Power: 50mW
Tolerance: ±1%
Operating voltage: 30V
Operating temperature: -55...155°C
auf Bestellung 4470 Stücke:
Lieferzeit 14-21 Tag (e)
| CRCW060330K0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 30kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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| GRC00PK4721J00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 63VDC; Ø25x40mm; ±20%; 2000h
Type of capacitor: electrolytic
Capacitance: 4.7mF
Operating voltage: 63V DC
Body dimensions: Ø25x40mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 63VDC; Ø25x40mm; ±20%; 2000h
Type of capacitor: electrolytic
Capacitance: 4.7mF
Operating voltage: 63V DC
Body dimensions: Ø25x40mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4825DDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.9A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.9A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AC05000001000JAC00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; 100Ω; THT; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Type of resistor: wire-wound
Resistance: 100Ω
Mounting: THT
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Length: 18mm
Leads: axial
Conform to the norm: AEC-Q200
Diameter: 7.5mm
Category: Power resistors
Description: Resistor: wire-wound; 100Ω; THT; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Type of resistor: wire-wound
Resistance: 100Ω
Mounting: THT
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Length: 18mm
Leads: axial
Conform to the norm: AEC-Q200
Diameter: 7.5mm
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
| SM6T6V8A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Manufacturer series: SM6T
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Manufacturer series: SM6T
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 13460 Stücke:
Lieferzeit 14-21 Tag (e)
| SM6T6V8A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 13 inch reel; tape
Manufacturer series: SM6T
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 13 inch reel; tape
Manufacturer series: SM6T
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
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| IRFI9540GPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
| VJ0603A220JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Capacitance: 22pF
Operating temperature: -55...125°C
Operating voltage: 50V
Tolerance: ±5%
Kind of capacitor: MLCC
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Capacitance: 22pF
Operating temperature: -55...125°C
Operating voltage: 50V
Tolerance: ±5%
Kind of capacitor: MLCC
Dielectric: C0G (NP0)
Type of capacitor: ceramic
auf Bestellung 6458 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT42-TAP |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.65V; 200mW
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 0.65V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: Ammo Pack
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.65V; 200mW
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 0.65V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: Ammo Pack
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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| BAT42W-E3-18 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 300mA; 5ns; 230mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Power dissipation: 0.23W
Leakage current: 0.5µA
Capacitance: 7pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 300mA; 5ns; 230mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Power dissipation: 0.23W
Leakage current: 0.5µA
Capacitance: 7pF
Produkt ist nicht verfügbar
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| BAT42-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO35; 30V; 200mA; 5ns
Type of diode: Schottky switching
Max. off-state voltage: 30V
Load current: 0.2A
Case: DO35
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Leakage current: 0.5µA
Capacitance: 7pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO35; 30V; 200mA; 5ns
Type of diode: Schottky switching
Max. off-state voltage: 30V
Load current: 0.2A
Case: DO35
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Leakage current: 0.5µA
Capacitance: 7pF
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| GRC00DD3311HTNL |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 50VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 50V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 50VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 50V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
| MAL214097112E3 |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 50VDC; 12.5x12.5x16mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 50V DC
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Operating temperature: -55...125°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 50VDC; 12.5x12.5x16mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 50V DC
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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| IRFR110TRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IRFR110TRLPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| IRFR110TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CRCW080510R0JNEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10Ω; SMD; 0805; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 10Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 10Ω; SMD; 0805; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 10Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
| CRCW080510R0JNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10Ω; SMD; 0805; 0.125W; ±5%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 10Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Category: SMD resistors
Description: Resistor: thick film; 10Ω; SMD; 0805; 0.125W; ±5%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 10Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| SIHP10N40D-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Mounting: THT
Pulsed drain current: 23A
Power dissipation: 147W
Gate charge: 30nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.6Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Mounting: THT
Pulsed drain current: 23A
Power dissipation: 147W
Gate charge: 30nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.6Ω
Produkt ist nicht verfügbar
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| RCA0603620KFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 620kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 620kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 620kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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