| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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SL23-E3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.44V Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Leakage current: 0.4mA Case: DO214AA; SMB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SL23-M3/52T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.44V Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Leakage current: 0.4mA Case: DO214AA; SMB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SL23HE3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.44V Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Leakage current: 10mA Case: DO214AA; SMB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SL23HM3_A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.44V Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Leakage current: 0.4mA Case: DO214AA; SMB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SL23HM3_A/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.44V Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Leakage current: 10mA Case: DO214AA; SMB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4933-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 22000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DF08S-E3/I | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DF08SA-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| V10P10-M3/87A | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A Type of diode: Schottky rectifying Case: SMPC; TO277A Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.68V Leakage current: 0.15mA Max. forward impulse current: 180A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| V10P10HM3_A/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A Type of diode: Schottky rectifying Case: SMPC; TO277A Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.68V Leakage current: 0.15mA Max. forward impulse current: 180A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| VBUS053CZ-HAF-G-08 | VISHAY |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 0.054kW; unidirectional; ESD; LLP75; Ch: 3 Type of diode: TVS array Breakdown voltage: 6.5V Peak pulse power dissipation: 0.054kW Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: LLP75 Max. off-state voltage: 5.5V Leakage current: 20nA Number of channels: 3 Application: USB |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDR608DP-T1-RE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of channel: enhancement Pulsed drain current: 400A Technology: TrenchFET® Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIDR608EP-T1-RE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 45V; 228A; 125W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 45V Drain current: 228A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 167nC Kind of channel: enhancement |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805511RFKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 511Ω; SMD; 0805; 125mW; ±1%; 2x1.25mm Type of resistor: thick film Resistance: 511Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Body dimensions: 2x1.25mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
auf Bestellung 62410 Stücke: Lieferzeit 14-21 Tag (e) |
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BZD27C4V3P-E3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.8W; 4.3V; SMD; DO219AB,SMF; 7 inch reel; BZD27C Type of diode: Zener Power dissipation: 0.8W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Case: DO219AB; SMF Kind of package: 7 inch reel Semiconductor structure: single diode Manufacturer series: BZD27C Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SIHFL9110TR-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.69A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CMB02070X1821FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1.82kΩ; SMD; MELF; 0207; 1W; ±1%; 500V Type of resistor: carbon film Resistance: 1.82kΩ Mounting: SMD Case: MELF Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±1% Operating voltage: 500V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...125°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm Roll diameter max.: 330mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TNPW0402100KBXEP | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; 100kΩ; 0402; 130mW; ±0.1%; ESD; 15ppm/°C Type of resistor: thin film Resistance: 100kΩ Case - inch: 0402 Case - mm: 1005 Power: 130mW Tolerance: ±0.1% Version: ESD Temperature coefficient: 15ppm/°C |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56-G3-18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 250mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Features of semiconductor devices: fast switching; small signal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAW56-HE3_A-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Features of semiconductor devices: fast switching; small signal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAW56-HE3_A-18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Features of semiconductor devices: fast switching; small signal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SIHB150N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 43A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 43A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 137mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SIHP150N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MAL211990502E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; THT; 470uF; 10VDC; 10x25mm; 4000h Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 470µF Operating voltage: 10V DC Body dimensions: 10x25mm Tolerance: -10...50% Service life: 4000h Impedance: 0.49Ω Operating temperature: -55...125°C ESR value: 610mΩ |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T200CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 190V; 2.2A; bidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 190V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SM6T Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CRCW06031R00JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 1Ω; SMD; 0603; 0.1W; ±5%; CRCW0603; 75V Type of resistor: thick film Resistance: 1Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±5% Manufacturer series: CRCW0603 Operating voltage: 75V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| P6KE6.8A-E3/73 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 57.1A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1mA Manufacturer series: P6KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| P6KE6.8AHE3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 57.1A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1mA Manufacturer series: P6KE Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 13 inch reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MCL103A-TR | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MicroMELF; SMD; 40V; 0.2A; 7 inch reel Mounting: SMD Max. forward impulse current: 15A Manufacturer standard package: 2500pcs. Max. forward voltage: 0.6V Features of semiconductor devices: small signal Max. off-state voltage: 40V Load current: 0.2A Kind of package: 7 inch reel Semiconductor structure: single diode Case: MicroMELF Type of diode: Schottky switching |
auf Bestellung 15447 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCL103C-TR | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MicroMELF; SMD; 20V; 200mA; 10ns; 400mW Type of diode: Schottky switching Case: MicroMELF Mounting: SMD Max. off-state voltage: 20V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Leakage current: 5µA Max. forward impulse current: 15A Reverse recovery time: 10ns Power dissipation: 0.4W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCL103A-TR3 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MicroMELF; SMD; 40V; 200mA; 10ns; 400mW Type of diode: Schottky switching Case: MicroMELF Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Leakage current: 5µA Max. forward impulse current: 15A Reverse recovery time: 10ns Power dissipation: 0.4W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCL103B-TR3 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MicroMELF; SMD; 30V; 200mA; 10ns; 400mW Type of diode: Schottky switching Case: MicroMELF Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Leakage current: 5µA Max. forward impulse current: 15A Reverse recovery time: 10ns Power dissipation: 0.4W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZT52C24-E3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: 7 inch reel Semiconductor structure: single diode Manufacturer series: BZT52C Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZT52C24-E3-18 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: 13 inch reel Semiconductor structure: single diode Manufacturer series: BZT52C Manufacturer standard package: 10000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZT52C24-G3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: 7 inch reel Semiconductor structure: single diode Manufacturer series: BZT52C Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZT52C24-G3-18 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: 13 inch reel Semiconductor structure: single diode Manufacturer series: BZT52C Manufacturer standard package: 10000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MCL101A-TR | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1V Max. off-state voltage: 60V Load current: 30mA Semiconductor structure: single diode Leakage current: 0.2µA Case: MicroMELF Type of diode: Schottky switching |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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| MAL205847103E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 10mF; 40VDC; Ø30x50mm; ±20% Tolerance: ±20% Diameter: 30mm Terminal pitch: 10mm Mounting: SNAP-IN Service life: 5000h Operating temperature: -40...105°C Body dimensions: Ø30x50mm Type of capacitor: electrolytic Capacitance: 10mF Height: 50mm Operating voltage: 40V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMU01020C9102FB300 | VISHAY |
Category: SMD resistorsDescription: Resistor: metal film; 91kΩ; SMD; 300mW; ±1%; 150V; Ø1.1x2.2mm Type of resistor: metal film Resistance: 91kΩ Mounting: SMD Power: 0.3W Tolerance: ±1% Operating voltage: 150V Body dimensions: Ø1.1x2.2mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF4002-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF4003-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF4004-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF4004-M3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF4006-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1.7V Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF4005-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1.7V Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SS16-M3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Leakage current: 0.2mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SS16HM3_B/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Leakage current: 0.2mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ES2D-M3/52T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ES2D-M3/5BT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ES2DHM3_A/I | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
1.5KE22A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 49A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
RCA0805620RFKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 620Ω; 0805; 125mW; ±1%; 150V; -55÷155°C Case - mm: 2012 Tolerance: ±1% Type of resistor: thick film Operating temperature: -55...155°C Resistance: 620Ω Power: 0.125W Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating voltage: 150V Case - inch: 0805 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
CRCW0805620KFKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 620kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Case - mm: 2012 Quantity in set/package: 5000pcs. Tolerance: ±1% Type of resistor: thick film Mounting: SMD Body dimensions: 2x1.25x0.45mm Operating temperature: -55...155°C Resistance: 620kΩ Power: 0.125W Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 150V Case - inch: 0805 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
CRCW0805620RFHEAP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Case - mm: 2012 Quantity in set/package: 5000pcs. Tolerance: ±1% Type of resistor: thick film Mounting: SMD Body dimensions: 2x1.25x0.5mm Operating temperature: -55...155°C Resistance: 620Ω Power: 0.125W Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 150V Case - inch: 0805 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
CRCW0805620RJNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Resistance: 620Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Body dimensions: 2x1.25x0.45mm Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
MBR10100-M3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 800mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.8V Max. forward impulse current: 150A Leakage current: 6mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
MBR10100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 120A Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SI7469DP-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -28A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -28A Pulsed drain current: -40A Power dissipation: 53W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| V8PAL45-M3/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO221BC; SMD; 45V; 8A Type of diode: Schottky rectifying Case: DO221BC Mounting: SMD Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.57V Leakage current: 1.85mA Max. forward impulse current: 120A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
SMAJ12CA-M3/5A | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SL23-E3/5BT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.4mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.4mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
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| SL23-M3/52T |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.4mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.4mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 6750 Stücke
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| SL23HE3_A/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 10mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 10mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SL23HM3_A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.4mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.4mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| SL23HM3_A/I |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 10mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AA,SMB; SMD; 30V; 2A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.44V
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 10mA
Case: DO214AA; SMB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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| 1N4933-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 22000 Stücke
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| DF08S-E3/I |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| DF08SA-E3/45 |
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Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| V10P10-M3/87A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Leakage current: 0.15mA
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Leakage current: 0.15mA
Max. forward impulse current: 180A
Produkt ist nicht verfügbar
Mindestbestellmenge: 6500 Stücke
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| V10P10HM3_A/I |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Leakage current: 0.15mA
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Leakage current: 0.15mA
Max. forward impulse current: 180A
Produkt ist nicht verfügbar
Mindestbestellmenge: 6500 Stücke
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| VBUS053CZ-HAF-G-08 |
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Hersteller: VISHAY
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 0.054kW; unidirectional; ESD; LLP75; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6.5V
Peak pulse power dissipation: 0.054kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: LLP75
Max. off-state voltage: 5.5V
Leakage current: 20nA
Number of channels: 3
Application: USB
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 0.054kW; unidirectional; ESD; LLP75; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6.5V
Peak pulse power dissipation: 0.054kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: LLP75
Max. off-state voltage: 5.5V
Leakage current: 20nA
Number of channels: 3
Application: USB
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| SIDR608DP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of channel: enhancement
Pulsed drain current: 400A
Technology: TrenchFET®
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of channel: enhancement
Pulsed drain current: 400A
Technology: TrenchFET®
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| SIDR608EP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 45V; 228A; 125W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 45V
Drain current: 228A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 167nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 45V; 228A; 125W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 45V
Drain current: 228A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 167nC
Kind of channel: enhancement
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.23 EUR |
| CRCW0805511RFKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 511Ω; SMD; 0805; 125mW; ±1%; 2x1.25mm
Type of resistor: thick film
Resistance: 511Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Body dimensions: 2x1.25mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 511Ω; SMD; 0805; 125mW; ±1%; 2x1.25mm
Type of resistor: thick film
Resistance: 511Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Body dimensions: 2x1.25mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
auf Bestellung 62410 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20000+ | 0.0045 EUR |
| BZD27C4V3P-E3-08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.8W; 4.3V; SMD; DO219AB,SMF; 7 inch reel; BZD27C
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: DO219AB; SMF
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZD27C
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.8W; 4.3V; SMD; DO219AB,SMF; 7 inch reel; BZD27C
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: DO219AB; SMF
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZD27C
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIHFL9110TR-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CMB02070X1821FB700 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1.82kΩ; SMD; MELF; 0207; 1W; ±1%; 500V
Type of resistor: carbon film
Resistance: 1.82kΩ
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: carbon film; 1.82kΩ; SMD; MELF; 0207; 1W; ±1%; 500V
Type of resistor: carbon film
Resistance: 1.82kΩ
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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| TNPW0402100KBXEP |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 100kΩ; 0402; 130mW; ±0.1%; ESD; 15ppm/°C
Type of resistor: thin film
Resistance: 100kΩ
Case - inch: 0402
Case - mm: 1005
Power: 130mW
Tolerance: ±0.1%
Version: ESD
Temperature coefficient: 15ppm/°C
Category: SMD resistors
Description: Resistor: thin film; 100kΩ; 0402; 130mW; ±0.1%; ESD; 15ppm/°C
Type of resistor: thin film
Resistance: 100kΩ
Case - inch: 0402
Case - mm: 1005
Power: 130mW
Tolerance: ±0.1%
Version: ESD
Temperature coefficient: 15ppm/°C
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.43 EUR |
| BAW56-G3-18 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 250mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 250mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BAW56-HE3_A-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| BAW56-HE3_A-18 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 150mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Features of semiconductor devices: fast switching; small signal
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| SIHB150N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 43A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 43A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 43A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 43A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| SIHP150N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MAL211990502E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 10VDC; 10x25mm; 4000h
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 470µF
Operating voltage: 10V DC
Body dimensions: 10x25mm
Tolerance: -10...50%
Service life: 4000h
Impedance: 0.49Ω
Operating temperature: -55...125°C
ESR value: 610mΩ
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 10VDC; 10x25mm; 4000h
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 470µF
Operating voltage: 10V DC
Body dimensions: 10x25mm
Tolerance: -10...50%
Service life: 4000h
Impedance: 0.49Ω
Operating temperature: -55...125°C
ESR value: 610mΩ
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 2.02 EUR |
| SM6T200CA-E3/52 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 190V; 2.2A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 190V; 2.2A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CRCW06031R00JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1Ω; SMD; 0603; 0.1W; ±5%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 1Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Manufacturer series: CRCW0603
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 1Ω; SMD; 0603; 0.1W; ±5%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 1Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Manufacturer series: CRCW0603
Operating voltage: 75V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| P6KE6.8A-E3/73 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| P6KE6.8AHE3/54 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.45V; 57.1A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| MCL103A-TR |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 0.2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 15A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.6V
Features of semiconductor devices: small signal
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: MicroMELF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 0.2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 15A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.6V
Features of semiconductor devices: small signal
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: MicroMELF
Type of diode: Schottky switching
auf Bestellung 15447 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 280+ | 0.31 EUR |
| 472+ | 0.18 EUR |
| 660+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2500+ | 0.098 EUR |
| 5000+ | 0.089 EUR |
| 7500+ | 0.084 EUR |
| 12500+ | 0.082 EUR |
| MCL103C-TR |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 20V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 20V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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| MCL103A-TR3 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 40V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| MCL103B-TR3 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 200mA; 10ns; 400mW
Type of diode: Schottky switching
Case: MicroMELF
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 15A
Reverse recovery time: 10ns
Power dissipation: 0.4W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BZT52C24-E3-08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| BZT52C24-E3-18 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BZT52C24-G3-08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 7 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 7 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C24-G3-18 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; 13 inch reel; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: 13 inch reel
Semiconductor structure: single diode
Manufacturer series: BZT52C
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| MCL101A-TR |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1V
Max. off-state voltage: 60V
Load current: 30mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1V
Max. off-state voltage: 60V
Load current: 30mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Type of diode: Schottky switching
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 736+ | 0.12 EUR |
| 787+ | 0.11 EUR |
| 823+ | 0.1 EUR |
| 852+ | 0.1 EUR |
| 1000+ | 0.093 EUR |
| MAL205847103E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 10mF; 40VDC; Ø30x50mm; ±20%
Tolerance: ±20%
Diameter: 30mm
Terminal pitch: 10mm
Mounting: SNAP-IN
Service life: 5000h
Operating temperature: -40...105°C
Body dimensions: Ø30x50mm
Type of capacitor: electrolytic
Capacitance: 10mF
Height: 50mm
Operating voltage: 40V DC
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 10mF; 40VDC; Ø30x50mm; ±20%
Tolerance: ±20%
Diameter: 30mm
Terminal pitch: 10mm
Mounting: SNAP-IN
Service life: 5000h
Operating temperature: -40...105°C
Body dimensions: Ø30x50mm
Type of capacitor: electrolytic
Capacitance: 10mF
Height: 50mm
Operating voltage: 40V DC
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| MMU01020C9102FB300 |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal film; 91kΩ; SMD; 300mW; ±1%; 150V; Ø1.1x2.2mm
Type of resistor: metal film
Resistance: 91kΩ
Mounting: SMD
Power: 0.3W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: Ø1.1x2.2mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 3000pcs.
Category: SMD resistors
Description: Resistor: metal film; 91kΩ; SMD; 300mW; ±1%; 150V; Ø1.1x2.2mm
Type of resistor: metal film
Resistance: 91kΩ
Mounting: SMD
Power: 0.3W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: Ø1.1x2.2mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 3000pcs.
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| UF4002-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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| UF4003-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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| UF4004-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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| UF4004-M3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1V
Reverse recovery time: 50ns
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| UF4006-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
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| UF4005-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO204AL,DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 30A
Case: DO41; DO204AL
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
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| SS16-M3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
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| SS16HM3_B/I |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
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| ES2D-M3/52T |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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| ES2D-M3/5BT |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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| ES2DHM3_A/I |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
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| 1.5KE22A-E3/54 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| RCA0805620RFKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Tolerance: ±1%
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; 620Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Tolerance: ±1%
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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| CRCW0805620KFKEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Resistance: 620kΩ
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; 620kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Resistance: 620kΩ
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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| CRCW0805620RFHEAP |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Case - mm: 2012
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Resistance: 620Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 150V
Case - inch: 0805
Produkt ist nicht verfügbar
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| CRCW0805620RJNEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 620Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.45mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 620Ω; SMD; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 620Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.45mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
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| MBR10100-M3/4W |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 6mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 6mA
Produkt ist nicht verfügbar
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| MBR10100CT-E3/4W |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 120A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 120A
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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| SI7469DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -28A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -28A
Pulsed drain current: -40A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -28A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -28A
Pulsed drain current: -40A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
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| V8PAL45-M3/I |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO221BC; SMD; 45V; 8A
Type of diode: Schottky rectifying
Case: DO221BC
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 1.85mA
Max. forward impulse current: 120A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO221BC; SMD; 45V; 8A
Type of diode: Schottky rectifying
Case: DO221BC
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 1.85mA
Max. forward impulse current: 120A
Produkt ist nicht verfügbar
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| SMAJ12CA-M3/5A |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Produkt ist nicht verfügbar
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