Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF540STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AC03000001007JAC00 | VISHAY |
![]() Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 0.1Ω Power: 3W Tolerance: ±5% Operating temperature: -50...250°C Temperature coefficient: 80ppm/°C Leads: axial Resistor features: non-flammable Leads dimensions: Ø0.8x25mm Body dimensions: Ø4.8x13mm |
auf Bestellung 1708 Stücke: Lieferzeit 14-21 Tag (e) |
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GSC00AF2211VARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Manufacturer series: GSC Nominal life: 2000h Height: 10mm |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A151JXBAC | VISHAY |
![]() Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1111D100JXRAJ | VISHAY |
![]() Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 1.5kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1111 Case - mm: 3028 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX55C3V0-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: THT Tolerance: ±5% Kind of package: Ammo Pack Case: DO35 Semiconductor structure: single diode |
auf Bestellung 19749 Stücke: Lieferzeit 14-21 Tag (e) |
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WSL2512R3300FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.33Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.54Ω Gate charge: 8.3nC Pulsed drain current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRF830ALPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF830ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF830ASTRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF830BPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF840ASTRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF840LCLPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF840LCSPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF840STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF9530STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF9530STRRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRFB13N50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SISS5808DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 24nC On-state resistance: 11mΩ Gate-source voltage: ±20V Power dissipation: 65.7W Drain current: 66.6A Drain-source voltage: 80V Pulsed drain current: 150A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX85C22-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 22V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 6232 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640PBF-BE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
GSC00AP4712AARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 470µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 18x21.5mm Height: 21.5mm Nominal life: 2000h Manufacturer series: GSC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ZSC00AP4712AARL | VISHAY |
![]() Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 470µF Operating voltage: 100V DC Body dimensions: Ø18x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ZSC00AG6811CARL | VISHAY |
![]() Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 16V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
auf Bestellung 1530 Stücke: Lieferzeit 14-21 Tag (e) |
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IFSC1008ABER100M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm Mounting: SMD Resistance: 359mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Type of inductor: wire Inductance: 10µH Operating current: 0.9A Manufacturer series: IFSC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IFSC1008ABER1R0M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm Mounting: SMD Resistance: 37mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Type of inductor: wire Inductance: 1µH Operating current: 2.65A Manufacturer series: IFSC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
GSC00AP4702GARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 400V DC Tolerance: ±20% Operating temperature: -40...105°C Manufacturer series: GSC Nominal life: 2000h Dimensions: 18x21.5mm Height: 21.5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CRCW08057K50JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 7.5kΩ Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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MRS16000C3300FCT00 | VISHAY |
![]() Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm Mounting: THT Type of resistor: thin film Operating temperature: -55...155°C Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Power: 0.4W Tolerance: ±1% Temperature coefficient: 50ppm/°C Max. operating voltage: 200V Resistance: 330Ω |
auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF730APBF-BE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF730ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF730ASTRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF730STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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VJ0603A180JXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 18pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 3426 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL219367121E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 120µF Operating voltage: 450V DC Body dimensions: Ø25x30mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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VJ0402V104ZXJCW2BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 16V Dielectric: Y5V Tolerance: -20...80% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -25...85°C |
auf Bestellung 7707 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7852DP-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 41nC On-state resistance: 16.5mΩ Power dissipation: 1.2W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TSOP39438 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
auf Bestellung 1081 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4138 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° Connector variant: straight |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP4438 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP58338 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TSOP6138TT | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Supply voltage: 2.5...5.5V Viewing angle: 100° Connector variant: angled |
auf Bestellung 556 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP6238TT | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Supply voltage: 2.5...5.5V Viewing angle: 100° Connector variant: angled |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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PA16NP472MAB15 | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±20% Power: 0.5W Characteristics: linear Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PE30L0FL472KAB | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear Resistance: 4.7kΩ Power: 3W Tolerance: ±10% Max. operating voltage: 300V Temperature coefficient: 150ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn Mounting: on panel Operating temperature: -55...125°C Shaft diameter: 6mm Thread length: 12mm Shaft length: 25mm Electrical rotation angle: 270 ±10° Mechanical rotation angle: 300 ±5° Min. insulation resistance: 1TΩ Leads: for soldering Track material: cermet Shaft surface: smooth Potentiometer features: for industrial use; for military use |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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TS53YJ102MR10 | VISHAY |
![]() Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear Resistance: 1kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Leads: YJ Track material: cermet Kind of potentiometer: single turn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: SMD Torque: 1,5Ncm Temperature coefficient: 100ppm/°C Max. operating voltage: 200V Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° |
auf Bestellung 628 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF644STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF644STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BFC233820333 | VISHAY |
![]() Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm Type of capacitor: polypropylene Capacitance: 33nF Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Body dimensions: 10x5x10.5mm Operating voltage: 310V AC; 630V DC |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301CDS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MRS25000C2324FCT00 | VISHAY |
![]() Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm Mounting: THT Type of resistor: thin film Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm Power: 0.6W Tolerance: ±1% Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Resistance: 2.32MΩ |
auf Bestellung 9441 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A561KXCAT | VISHAY |
![]() Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 560pF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL530PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL530STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1.5KE130CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
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593D107X9016D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ Manufacturer series: Tantamount ESR value: 125mΩ Kind of capacitor: low ESR Case - mm: 7343 Operating temperature: -55...125°C Case - inch: 2917 Case: D Tolerance: ±10% Type of capacitor: tantalum Capacitance: 100µF Operating voltage: 16V DC Mounting: SMD |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AC03000001007JAC00 |
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Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Leads: axial
Resistor features: non-flammable
Leads dimensions: Ø0.8x25mm
Body dimensions: Ø4.8x13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Leads: axial
Resistor features: non-flammable
Leads dimensions: Ø0.8x25mm
Body dimensions: Ø4.8x13mm
auf Bestellung 1708 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
143+ | 0.5 EUR |
177+ | 0.41 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
GSC00AF2211VARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
210+ | 0.35 EUR |
VJ0603A151JXBAC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
538+ | 0.13 EUR |
703+ | 0.1 EUR |
781+ | 0.092 EUR |
1578+ | 0.045 EUR |
1667+ | 0.043 EUR |
VJ1111D100JXRAJ |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX55C3V0-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO35
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO35
Semiconductor structure: single diode
auf Bestellung 19749 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
606+ | 0.12 EUR |
910+ | 0.079 EUR |
1087+ | 0.066 EUR |
1629+ | 0.044 EUR |
2858+ | 0.025 EUR |
3031+ | 0.024 EUR |
WSL2512R3300FEA |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1782 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
334+ | 0.21 EUR |
353+ | 0.2 EUR |
IRF510STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Gate charge: 8.3nC
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Gate charge: 8.3nC
Pulsed drain current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF830ALPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
IRF830ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF830ASTRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF830BPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF840ASTRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF840LCLPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF840LCSPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF840STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9530STRLPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF9530STRRPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFB13N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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SISS5808DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Drain current: 66.6A
Drain-source voltage: 80V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Drain current: 66.6A
Drain-source voltage: 80V
Pulsed drain current: 150A
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BZX85C22-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 6232 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
385+ | 0.19 EUR |
463+ | 0.15 EUR |
742+ | 0.096 EUR |
892+ | 0.08 EUR |
1289+ | 0.055 EUR |
1363+ | 0.052 EUR |
5000+ | 0.05 EUR |
IRF640PBF-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
IRF640STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
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GSC00AP4712AARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 18x21.5mm
Height: 21.5mm
Nominal life: 2000h
Manufacturer series: GSC
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 18x21.5mm
Height: 21.5mm
Nominal life: 2000h
Manufacturer series: GSC
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ZSC00AP4712AARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
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ZSC00AG6811CARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
170+ | 0.42 EUR |
290+ | 0.25 EUR |
530+ | 0.14 EUR |
560+ | 0.13 EUR |
IFSC1008ABER100M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 10µH
Operating current: 0.9A
Manufacturer series: IFSC
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 10µH
Operating current: 0.9A
Manufacturer series: IFSC
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IFSC1008ABER1R0M01 |
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Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 1µH
Operating current: 2.65A
Manufacturer series: IFSC
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 1µH
Operating current: 2.65A
Manufacturer series: IFSC
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GSC00AP4702GARL |
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Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
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CRCW08057K50JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1200+ | 0.06 EUR |
MRS16000C3300FCT00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm
Mounting: THT
Type of resistor: thin film
Operating temperature: -55...155°C
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Power: 0.4W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Resistance: 330Ω
Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm
Mounting: THT
Type of resistor: thin film
Operating temperature: -55...155°C
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Power: 0.4W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Resistance: 330Ω
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
397+ | 0.18 EUR |
460+ | 0.16 EUR |
574+ | 0.12 EUR |
794+ | 0.09 EUR |
1441+ | 0.05 EUR |
1525+ | 0.047 EUR |
IRF730APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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IRF730APBF-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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IRF730ASPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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IRF730ASTRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ0603A180JXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3426 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
729+ | 0.098 EUR |
2273+ | 0.031 EUR |
3402+ | 0.021 EUR |
MAL219367121E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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VJ0402V104ZXJCW2BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
auf Bestellung 7707 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4700+ | 0.015 EUR |
SI7852DP-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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TSOP39438 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
80+ | 0.9 EUR |
85+ | 0.85 EUR |
99+ | 0.72 EUR |
105+ | 0.68 EUR |
500+ | 0.66 EUR |
TSOP4138 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
99+ | 0.73 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
TSOP4438 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
89+ | 0.81 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
113+ | 0.63 EUR |
TSOP58338 |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSOP6138TT |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
60+ | 1.21 EUR |
65+ | 1.1 EUR |
109+ | 0.66 EUR |
115+ | 0.62 EUR |
TSOP6238TT |
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Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
77+ | 0.93 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
PA16NP472MAB15 |
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Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
Im Einkaufswagen
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PE30L0FL472KAB |
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Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.98 EUR |
TS53YJ102MR10 |
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Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1,5Ncm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1,5Ncm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.8 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
IRF644STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF644STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFC233820333 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 630VDC; 310VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 33nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Body dimensions: 10x5x10.5mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
75+ | 0.95 EUR |
125+ | 0.58 EUR |
132+ | 0.54 EUR |
SI2301CDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MRS25000C2324FCT00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Resistance: 2.32MΩ
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 9441 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
240+ | 0.3 EUR |
570+ | 0.13 EUR |
1220+ | 0.059 EUR |
1280+ | 0.056 EUR |
VJ0805A561KXCAT |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 560pF; 200V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 560pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
560+ | 0.13 EUR |
1200+ | 0.06 EUR |
1250+ | 0.057 EUR |
IRL530PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
59+ | 1.21 EUR |
91+ | 0.79 EUR |
IRL530STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9540STRRPBF |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5KE130CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
96+ | 0.75 EUR |
202+ | 0.35 EUR |
214+ | 0.33 EUR |
593D107X9016D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Operating temperature: -55...125°C
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Case - mm: 7343
Operating temperature: -55...125°C
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 16V DC
Mounting: SMD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.1 EUR |
87+ | 0.82 EUR |
143+ | 0.5 EUR |
152+ | 0.47 EUR |