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VOH1016AD-V VOH1016AD-V VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CFB72F47D7B40C7&compId=VOH1016AD.pdf?ci_sign=ce2b553eebf41ca5dec32417d9407d7d73267247 Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: DIP6
Conform to the norm: VDE
Slew rate: 10kV/μs
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VOH1016AG VOH1016AG VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CFB72F47D7B40C7&compId=VOH1016AD.pdf?ci_sign=ce2b553eebf41ca5dec32417d9407d7d73267247 Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: 400 mil; DIP6
Slew rate: 10kV/μs
Turn-off time: 0.5µs
Turn-on time: 250ns
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SIHP22N60E-GE3 SIHP22N60E-GE3 VISHAY sihp22n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.39 EUR
15+4.86 EUR
25+4.29 EUR
100+3.85 EUR
Mindestbestellmenge: 14
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SIHA22N60AE-GE3 VISHAY siha22n60ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHA22N60EF-GE3 VISHAY tf-siha22n60ef-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHB22N60AE-GE3 VISHAY sihb22n60ae.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60E-GE3 SIHB22N60E-GE3 VISHAY sihb22n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60EF-GE3 VISHAY tf-sihb22n60ef-ge3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60EL-GE3 VISHAY sihb22n60el.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60ET1-GE3 VISHAY sihb22n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60ET5-GE3 VISHAY sihb22n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SiHP22N60AE-GE3 VISHAY sihp22n60ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHP22N60EF-GE3 VISHAY sihp22n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHG052N60EF-GE3 VISHAY sihg052n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
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SIHP052N60EF-GE3 VISHAY sihp052n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
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T18222KT10 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C6A6922DA760E2&compId=211.pdf?ci_sign=927389ec971b022990db5885f449357d96f52955 Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 2.2kΩ; THT; ±10%; cermet; 19x6.4x5.3mm
Type of potentiometer: mounting
Resistance: 2.2kΩ
Mounting: THT
Tolerance: ±10%
Track material: cermet
Temperature coefficient: 100ppm/°C
Body dimensions: 19x6.4x5.3mm
Quantity in set/package: 25pcs.
Operating temperature: -55...125°C
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TLHR4400 TLHR4400 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED684D7965D100E91BF&compId=TLHG4400.pdf?ci_sign=c34eb9869f9fdd677c216f741ac6a643d5059f25 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AB93F3E25DA27E27&compId=TLHx440x-DTE.pdf?ci_sign=67c9fd62a3094c4d8c0c6b752824027f903ed220 Category: THT LEDs Round
Description: LED; red; 3mm; 1.6÷13mcd; 30°; Front: convex; 2÷3VDC; No.of term: 2
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 1.6...13mcd
Viewing angle: 30°
Wavelength: 612...625nm
LED lens: diffused
LED current: 20mA
Mounting: THT
Front: convex
Operating voltage: 2...3V DC
Number of terminals: 2
Terminal pitch: 2.54mm
auf Bestellung 3967 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
516+0.14 EUR
Mindestbestellmenge: 417
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PR03000202209JAC00 PR03000202209JAC00 VISHAY pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa Category: THT Resistors
Description: Resistor: power metal; THT; 22Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial
Type of resistor: power metal
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 750V
Temperature coefficient: 250ppm/°C
Leads: axial
Resistor features: high power and small dimension
Body dimensions: Ø5.2x19.5mm
Diameter: 5.2mm
Length: 19.5mm
auf Bestellung 365 Stücke:
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180+0.4 EUR
Mindestbestellmenge: 180
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AC03000002209JACCS VISHAY acxxcs.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 22Ω; 3W; ±5%; Ø4.8x13mm; axial; L: 13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
Body dimensions: Ø4.8x13mm
Diameter: 4.8mm
Length: 13mm
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CRCW080582K0FKTABC CRCW080582K0FKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 5100 Stücke:
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2200+0.034 EUR
4000+0.018 EUR
5100+0.014 EUR
Mindestbestellmenge: 2200
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RCA080582K0FKEA RCA080582K0FKEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752 Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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RCA080582K0JNEA RCA080582K0JNEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752 Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW080582K0FKEAHP CRCW080582K0FKEAHP VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C169D892CFC0E2&compId=13.pdf?ci_sign=521368a6c90f4ae6b0426b9ee1f4b22f34e92b3c Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 500mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.5W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.5mm
Roll diameter max.: 180mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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CRCW080582K0JNTABC CRCW080582K0JNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
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PR02000209101JA100 PR02000209101JA100 VISHAY pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa Category: THT Resistors
Description: Resistor: power metal; THT; 9.1kΩ; 2W; ±5%; 500V; Ø3.9x12mm; axial
Mounting: THT
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Resistance: 9.1kΩ
Leads: axial
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
610+0.12 EUR
Mindestbestellmenge: 610
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CRCW06039K10FKTABC CRCW06039K10FKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 9.1kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 9.1kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 34900 Stücke:
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4200+0.017 EUR
12000+0.006 EUR
16100+0.0045 EUR
34900+0.002 EUR
Mindestbestellmenge: 4200
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SB140-E3/54 VISHAY sb110.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.48V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Leakage current: 10mA
Kind of package: 13 inch reel
Produkt ist nicht verfügbar
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VJ1812A472FXCTW1BC VJ1812A472FXCTW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 200V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A103GXATW1BC VJ1812A103GXATW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A221KXGAT VJ1812A221KXGAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 220pF
Tolerance: ±10%
Operating voltage: 1kV
Case - inch: 1812
Case - mm: 4532
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VJ1812A472JXAAT VJ1812A472JXAAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 50V; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A103GXAAT VJ1812A103GXAAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1812A123FXAAT VJ1812A123FXAAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 12nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A151JXHTW1BC VJ1812A151JXHTW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A183FXAAT VJ1812A183FXAAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 18nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A392GXCAT VJ1812A392GXCAT VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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VJ1812A470JXHTW1BC VJ1812A470JXHTW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 47pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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MCT0603MD1623DP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 162kΩ; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 162kΩ
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
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CRCW080513R0FKEA CRCW080513R0FKEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C0C6CC265A40E2&compId=1.pdf?ci_sign=8b43def66cb9304b4c26a68019cb04278e0bb88d Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 13Ω; 125mW; ±1%; 150V; 2x1.25x0.5mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 13Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
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CRCW080584K5FKEA CRCW080584K5FKEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C0C6CC265A40E2&compId=1.pdf?ci_sign=8b43def66cb9304b4c26a68019cb04278e0bb88d Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 84.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 84.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
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SI7454DDP-T1-GE3 VISHAY si7454ddp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 21A; Idm: 40A; 19W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 33mΩ
Power dissipation: 19W
Drain current: 21A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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SI7454DP-T1-E3 VISHAY 71618.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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SI7454DP-T1-GE3 VISHAY si7454dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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SI7454FDP-T1-RE3 VISHAY si7454fdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 26.5nC
On-state resistance: 34mΩ
Power dissipation: 39W
Drain current: 23.5A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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UF4003-E3/54 UF4003-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCB05CAE3D340143&compId=uf4001_7.pdf?ci_sign=57283e7b1e18173aacfb9eaf44a51d24cbec7693 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; 13 inch reel; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 50µA
Capacitance: 17pF
Quantity in set/package: 5500pcs.
auf Bestellung 1090 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
353+0.2 EUR
491+0.15 EUR
642+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 228
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RCWL1206R150JMEA RCWL1206R150JMEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C68C4AE790E0E2&compId=172.pdf?ci_sign=2ea60a18bddd8329369b03fce96053815d1078a8 Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 150mΩ; 250mW; ±5%; 3.2x1.6x0.55mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Resistance: 0.15Ω
Power: 0.25W
Tolerance: ±5%
Body dimensions: 3.2x1.6x0.55mm
Operating temperature: -55...155°C
Temperature coefficient: 300ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
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VS-ETH1506FP-M3 VISHAY vs-eth1506fpm3.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220FP-2; 29ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 29ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FP-2
Max. forward voltage: 2.45V
Kind of package: tube
Max. forward impulse current: 160A
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BFC237363684 VISHAY mkt373.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 250VAC; 31x23x13mm; THT
Type of capacitor: polypropylene
Capacitance: 0.68µF
Operating voltage: 250V AC; 630V DC
Tolerance: ±10%
Mounting: THT
Terminal pitch: 27.5mm
Body dimensions: 31x23x13mm
Climate class: 55/105/56
Leads: 2pin
Produkt ist nicht verfügbar
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IRLL110PBF IRLL110PBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BFCAABFDBA469&compId=IRLL110PBF.pdf?ci_sign=ea4ae21d58897bca7902ff68bd6b60d7e49bab3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
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SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 VISHAY si3460ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
214+0.33 EUR
258+0.28 EUR
295+0.24 EUR
329+0.22 EUR
390+0.19 EUR
Mindestbestellmenge: 148
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SIR4602LDP-T1-RE3 VISHAY sir4602ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 52.1A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 52.1A
Pulsed drain current: 150A
Power dissipation: 43W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIR4604LDP-T1-GE3 VISHAY sir4604ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 100A
Power dissipation: 41.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIR4608DP-T1-GE3 VISHAY sir4608dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 42.8A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42.8A
Pulsed drain current: 100A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIR460DP-T1-GE3 VISHAY sir460dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIS4604LDN-T1-GE3 VISHAY sis4604ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.7A
Pulsed drain current: 100A
Power dissipation: 21.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SIS4608LDN-T1-GE3 VISHAY sis4608ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28.9A
Pulsed drain current: 100A
Power dissipation: 17.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SIHG460B-GE3 VISHAY sihg460b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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SUD80460E-GE3 VISHAY sud80460e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 42A
Pulsed drain current: 40A
Power dissipation: 65.2W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 44.7mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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MAL204211479E3 VISHAY 041042043ash.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 160VDC; -10÷50%; Leads: axial
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 160V DC
Tolerance: -10...50%
Service life: 15000h
Operating temperature: -40...85°C
Manufacturer series: MAL2042
Impedance: 2.1Ω
ESR value: 3.2Ω
Leads: axial
auf Bestellung 200 Stücke:
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200+2.29 EUR
Mindestbestellmenge: 200
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SISH410DN-T1-GE3 VISHAY sish410dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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VOH1016AD-V pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CFB72F47D7B40C7&compId=VOH1016AD.pdf?ci_sign=ce2b553eebf41ca5dec32417d9407d7d73267247
VOH1016AD-V
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: DIP6
Conform to the norm: VDE
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
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VOH1016AG pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CFB72F47D7B40C7&compId=VOH1016AD.pdf?ci_sign=ce2b553eebf41ca5dec32417d9407d7d73267247
VOH1016AG
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: 400 mil; DIP6
Slew rate: 10kV/μs
Turn-off time: 0.5µs
Turn-on time: 250ns
Produkt ist nicht verfügbar
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SIHP22N60E-GE3 sihp22n60e.pdf
SIHP22N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.39 EUR
15+4.86 EUR
25+4.29 EUR
100+3.85 EUR
Mindestbestellmenge: 14
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SIHA22N60AE-GE3 siha22n60ae.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHA22N60EF-GE3 tf-siha22n60ef-ge3.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB22N60AE-GE3 sihb22n60ae.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB22N60E-GE3 sihb22n60e.pdf
SIHB22N60E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB22N60EF-GE3 tf-sihb22n60ef-ge3.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB22N60EL-GE3 sihb22n60el.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB22N60ET1-GE3 sihb22n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB22N60ET5-GE3 sihb22n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SiHP22N60AE-GE3 sihp22n60ae.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP22N60EF-GE3 sihp22n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG052N60EF-GE3 sihg052n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP052N60EF-GE3 sihp052n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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T18222KT10 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C6A6922DA760E2&compId=211.pdf?ci_sign=927389ec971b022990db5885f449357d96f52955
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 2.2kΩ; THT; ±10%; cermet; 19x6.4x5.3mm
Type of potentiometer: mounting
Resistance: 2.2kΩ
Mounting: THT
Tolerance: ±10%
Track material: cermet
Temperature coefficient: 100ppm/°C
Body dimensions: 19x6.4x5.3mm
Quantity in set/package: 25pcs.
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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TLHR4400 pVersion=0046&contRep=ZT&docId=005056AB752F1ED684D7965D100E91BF&compId=TLHG4400.pdf?ci_sign=c34eb9869f9fdd677c216f741ac6a643d5059f25 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AB93F3E25DA27E27&compId=TLHx440x-DTE.pdf?ci_sign=67c9fd62a3094c4d8c0c6b752824027f903ed220
TLHR4400
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1.6÷13mcd; 30°; Front: convex; 2÷3VDC; No.of term: 2
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 1.6...13mcd
Viewing angle: 30°
Wavelength: 612...625nm
LED lens: diffused
LED current: 20mA
Mounting: THT
Front: convex
Operating voltage: 2...3V DC
Number of terminals: 2
Terminal pitch: 2.54mm
auf Bestellung 3967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
516+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PR03000202209JAC00 pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa
PR03000202209JAC00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 22Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial
Type of resistor: power metal
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 750V
Temperature coefficient: 250ppm/°C
Leads: axial
Resistor features: high power and small dimension
Body dimensions: Ø5.2x19.5mm
Diameter: 5.2mm
Length: 19.5mm
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
180+0.4 EUR
Mindestbestellmenge: 180
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AC03000002209JACCS acxxcs.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 22Ω; 3W; ±5%; Ø4.8x13mm; axial; L: 13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
Body dimensions: Ø4.8x13mm
Diameter: 4.8mm
Length: 13mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRCW080582K0FKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW080582K0FKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 5100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2200+0.034 EUR
4000+0.018 EUR
5100+0.014 EUR
Mindestbestellmenge: 2200
Im Einkaufswagen  Stück im Wert von  UAH
RCA080582K0FKEA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752
RCA080582K0FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA080582K0JNEA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752
RCA080582K0JNEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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CRCW080582K0FKEAHP pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C169D892CFC0E2&compId=13.pdf?ci_sign=521368a6c90f4ae6b0426b9ee1f4b22f34e92b3c
CRCW080582K0FKEAHP
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 500mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.5W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.5mm
Roll diameter max.: 180mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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CRCW080582K0JNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW080582K0JNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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PR02000209101JA100 pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa
PR02000209101JA100
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 9.1kΩ; 2W; ±5%; 500V; Ø3.9x12mm; axial
Mounting: THT
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Resistance: 9.1kΩ
Leads: axial
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
610+0.12 EUR
Mindestbestellmenge: 610
Im Einkaufswagen  Stück im Wert von  UAH
CRCW06039K10FKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW06039K10FKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 9.1kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 9.1kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 34900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4200+0.017 EUR
12000+0.006 EUR
16100+0.0045 EUR
34900+0.002 EUR
Mindestbestellmenge: 4200
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SB140-E3/54 sb110.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.48V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Leakage current: 10mA
Kind of package: 13 inch reel
Produkt ist nicht verfügbar
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VJ1812A472FXCTW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1812A472FXCTW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 200V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1812A103GXATW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1812A103GXATW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1812A221KXGAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1812A221KXGAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 220pF
Tolerance: ±10%
Operating voltage: 1kV
Case - inch: 1812
Case - mm: 4532
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1812A472JXAAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1812A472JXAAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 50V; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1812A103GXAAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1812A103GXAAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1812A123FXAAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1812A123FXAAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 12nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1812A151JXHTW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1812A151JXHTW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1812A183FXAAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1812A183FXAAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 18nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1812A392GXCAT pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ1812A392GXCAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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VJ1812A470JXHTW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ1812A470JXHTW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 47pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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MCT0603MD1623DP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 162kΩ; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 162kΩ
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
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CRCW080513R0FKEA pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C0C6CC265A40E2&compId=1.pdf?ci_sign=8b43def66cb9304b4c26a68019cb04278e0bb88d
CRCW080513R0FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 13Ω; 125mW; ±1%; 150V; 2x1.25x0.5mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 13Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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CRCW080584K5FKEA pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C0C6CC265A40E2&compId=1.pdf?ci_sign=8b43def66cb9304b4c26a68019cb04278e0bb88d
CRCW080584K5FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 84.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 84.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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SI7454DDP-T1-GE3 si7454ddp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 21A; Idm: 40A; 19W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 33mΩ
Power dissipation: 19W
Drain current: 21A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
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SI7454DP-T1-E3 71618.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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SI7454DP-T1-GE3 si7454dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
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SI7454FDP-T1-RE3 si7454fdp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 26.5nC
On-state resistance: 34mΩ
Power dissipation: 39W
Drain current: 23.5A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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UF4003-E3/54 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCB05CAE3D340143&compId=uf4001_7.pdf?ci_sign=57283e7b1e18173aacfb9eaf44a51d24cbec7693
UF4003-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; 13 inch reel; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 50µA
Capacitance: 17pF
Quantity in set/package: 5500pcs.
auf Bestellung 1090 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
353+0.2 EUR
491+0.15 EUR
642+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 228
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RCWL1206R150JMEA pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A4C68C4AE790E0E2&compId=172.pdf?ci_sign=2ea60a18bddd8329369b03fce96053815d1078a8
RCWL1206R150JMEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 150mΩ; 250mW; ±5%; 3.2x1.6x0.55mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Resistance: 0.15Ω
Power: 0.25W
Tolerance: ±5%
Body dimensions: 3.2x1.6x0.55mm
Operating temperature: -55...155°C
Temperature coefficient: 300ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
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VS-ETH1506FP-M3 vs-eth1506fpm3.pdf
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220FP-2; 29ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 29ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FP-2
Max. forward voltage: 2.45V
Kind of package: tube
Max. forward impulse current: 160A
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BFC237363684 mkt373.pdf
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 250VAC; 31x23x13mm; THT
Type of capacitor: polypropylene
Capacitance: 0.68µF
Operating voltage: 250V AC; 630V DC
Tolerance: ±10%
Mounting: THT
Terminal pitch: 27.5mm
Body dimensions: 31x23x13mm
Climate class: 55/105/56
Leads: 2pin
Produkt ist nicht verfügbar
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IRLL110PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BFCAABFDBA469&compId=IRLL110PBF.pdf?ci_sign=ea4ae21d58897bca7902ff68bd6b60d7e49bab3e
IRLL110PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI3460DDV-T1-GE3 si3460ddv.pdf
SI3460DDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
214+0.33 EUR
258+0.28 EUR
295+0.24 EUR
329+0.22 EUR
390+0.19 EUR
Mindestbestellmenge: 148
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SIR4602LDP-T1-RE3 sir4602ldp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 52.1A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 52.1A
Pulsed drain current: 150A
Power dissipation: 43W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIR4604LDP-T1-GE3 sir4604ldp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 100A
Power dissipation: 41.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIR4608DP-T1-GE3 sir4608dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 42.8A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42.8A
Pulsed drain current: 100A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIR460DP-T1-GE3 sir460dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIS4604LDN-T1-GE3 sis4604ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.7A
Pulsed drain current: 100A
Power dissipation: 21.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SIS4608LDN-T1-GE3 sis4608ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28.9A
Pulsed drain current: 100A
Power dissipation: 17.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SIHG460B-GE3 sihg460b.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SUD80460E-GE3 sud80460e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 42A
Pulsed drain current: 40A
Power dissipation: 65.2W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 44.7mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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MAL204211479E3 041042043ash.pdf
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 160VDC; -10÷50%; Leads: axial
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 160V DC
Tolerance: -10...50%
Service life: 15000h
Operating temperature: -40...85°C
Manufacturer series: MAL2042
Impedance: 2.1Ω
ESR value: 3.2Ω
Leads: axial
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+2.29 EUR
Mindestbestellmenge: 200
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SISH410DN-T1-GE3 sish410dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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