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SS33-E3/9AT VISHAY ss32_ss36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 13 inch reel
Mounting: SMD
Quantity in set/package: 3500pcs.
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Kind of package: 13 inch reel
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
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SS32-E3/57T SS32-E3/57T VISHAY ss32_ss36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Kind of package: 7 inch reel
Case: SMC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
206+0.35 EUR
298+0.24 EUR
355+0.2 EUR
500+0.17 EUR
Mindestbestellmenge: 162
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SS32-E3/9AT VISHAY ss32_ss36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 13 inch reel
Mounting: SMD
Kind of package: 13 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SS32HE3_B/H VISHAY ss32_ss36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Application: automotive industry
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SISS32ADN-T1-GE3 VISHAY siss32adn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 120A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
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SISS32DN-T1-GE3 VISHAY siss32dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
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SISS32LDN-T1-GE3 VISHAY siss32ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 9.5mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
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1.5KE20A-E3/54 1.5KE20A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 54.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 17.1V
Breakdown voltage: 20V
Max. forward impulse current: 54.2A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
auf Bestellung 1367 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
122+0.59 EUR
172+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE24A-E3/54 1.5KE24A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
93+0.77 EUR
104+0.69 EUR
136+0.53 EUR
154+0.47 EUR
250+0.4 EUR
500+0.35 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ20A-E3/57T SMCJ20A-E3/57T VISHAY smcj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
175+0.41 EUR
247+0.29 EUR
295+0.24 EUR
500+0.21 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
VDRH07K300TSE VISHAY vdrh.pdf Category: THT varistors
Description: Varistor: metal-oxide; THT; 300VAC; 385VDC; 470V; 1.75kA; Ø9mm
Type of varistor: metal-oxide
Mounting: THT
Max. operating voltage: 300V AC; 385V DC
Varistor voltage: 470V
Varistor max current 8/20µs: 1.75kA
Terminal pitch: 5mm
Body dimensions: Ø9mm
Diameter: 9mm
Height: 9mm
Operating temperature: -40...125°C
Leads dimensions: Ø0.6x24mm
Produkt ist nicht verfügbar
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UG30DPT-E3/45 UG30DPT-E3/45 VISHAY ug30.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AD-3
Max. forward voltage: 1.15V
Reverse recovery time: 50ns
auf Bestellung 743 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
29+2.49 EUR
33+2.19 EUR
37+1.97 EUR
120+1.86 EUR
Mindestbestellmenge: 26
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VBT6045CBP-E3/4W VBT6045CBP-E3/4W VISHAY VBT6045CBP-E3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
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VBT6045C-E3/8W VISHAY vbt6045c.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
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VBT6045C-E3/4W VISHAY vbt6045c.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
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VBT6045C-M3/8W VISHAY vbt6045c.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
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VBT6045CBP-E3/8W VISHAY irl620.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045C-M3/4W VISHAY vbt6045c.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
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VBT6045CBP-M3/4W VISHAY VBT6045CBP-M3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
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VBT6045CBP-M3/8W VISHAY VBT6045CBP-M3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
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BAV203-GS08 BAV203-GS08 VISHAY bav200-bav203-vi.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
auf Bestellung 8884 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
715+0.1 EUR
947+0.076 EUR
1071+0.067 EUR
1417+0.05 EUR
1593+0.045 EUR
1662+0.043 EUR
2500+0.039 EUR
Mindestbestellmenge: 625
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BAV202-GS08 BAV202-GS08 VISHAY bav200-bav203-vi.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1042+0.069 EUR
1147+0.062 EUR
1345+0.053 EUR
1613+0.044 EUR
1749+0.041 EUR
Mindestbestellmenge: 625
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BAV20-TAP BAV20-TAP VISHAY bav17-bav21-vi.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 8739 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
406+0.18 EUR
455+0.16 EUR
797+0.09 EUR
1177+0.061 EUR
1260+0.057 EUR
1493+0.048 EUR
1839+0.039 EUR
2500+0.036 EUR
Mindestbestellmenge: 313
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BAV20W-E3-08 VISHAY BAV19W_20W_21W_Rev1.6_2-18-23.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.25A; 50ns; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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BAV20W-E3-18 VISHAY BAV19W_20W_21W_Rev1.6_2-18-23.pdf Category: SMD universal diodes
Description: Diode: switching; SMD
Type of diode: switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAV20WS-HE3-18 BAV20WS-HE3-18 VISHAY bav19ws.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 13 inch reel
Max. forward impulse current: 1A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Power dissipation: 0.2W
Leakage current: 15µA
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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VJ1206Y224KXAAT VJ1206Y224KXAAT VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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SML4742A-E3/61 SML4742A-E3/61 VISHAY SML47xx_A.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: DO214AC; SMA
Semiconductor structure: single diode
Quantity in set/package: 1800pcs.
Produkt ist nicht verfügbar
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CRCW080522R0JNEA CRCW080522R0JNEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
658+0.11 EUR
2660+0.027 EUR
3552+0.02 EUR
4020+0.018 EUR
5000+0.014 EUR
Mindestbestellmenge: 658
Im Einkaufswagen  Stück im Wert von  UAH
RCA080522R0JNEA RCA080522R0JNEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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IRFP9140PBF IRFP9140PBF VISHAY IRFP9140PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.18 EUR
24+2.99 EUR
28+2.63 EUR
50+2.36 EUR
100+2.1 EUR
Mindestbestellmenge: 18
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IRF9510PBF IRF9510PBF VISHAY IRF9510PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
120+0.6 EUR
135+0.53 EUR
143+0.5 EUR
250+0.47 EUR
500+0.44 EUR
Mindestbestellmenge: 100
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IRF9510SPBF IRF9510SPBF VISHAY IRF9510S.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
59+1.23 EUR
68+1.06 EUR
100+0.99 EUR
250+0.9 EUR
Mindestbestellmenge: 40
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IRF9510STRLPBF VISHAY sihf9510.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9510STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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534B1103JC 534B1103JC VISHAY 533534.pdf Category: Wire multiturn potentiometers
Description: Potentiometer: shaft; multiturn; 10kΩ; 2W; ±5%; 6.35mm; Ø22.22x19mm
Type of potentiometer: shaft
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 2W
Tolerance: ±5%
Temperature coefficient: 20ppm/°C
Body dimensions: Ø22.22x19mm
Track material: wirewound
Operating temperature: -55...125°C
Diameter: 22.22mm
L shaft length: 20.7mm
Linearity tolerance: ±0.25%
Number of electrical turns: 10
Min. insulation resistance: 1GΩ
Manufacturer series: 534
Shaft surface: smooth
Potentiometer features: precise
Height: 19mm
Thread length: 8mm
Shaft diameter: 6.35mm
Shaft length: 12.7mm
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20+13.26 EUR
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100+12.61 EUR
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MCT0603PD2002BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 20kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Mounting: SMD
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: P
Type of resistor: thin film
Operating temperature: -55...175°C
Resistance: 20kΩ
Roll diameter max.: 180mm
Power: 0.25W
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC-Q200
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EGP20D-E3/54 EGP20D-E3/54 VISHAY EGP20D-E3-54.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; 13 inch reel; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Quantity in set/package: 4000pcs.
Max. forward impulse current: 75A
Max. off-state voltage: 200V
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EGP20D-E3/73 EGP20D-E3/73 VISHAY EGP20D-E3-54.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 200V
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MCT0603PD1001BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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MCT0603PD1001DP500 VISHAY mcxhp.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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MCT0603PD1002BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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MCT0603PD1002DP500 VISHAY mcxhp.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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MCT0603PD1009DP500 VISHAY mcxhp.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10Ω; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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MCS0402PD1000DE500 VISHAY mcxhp.pdf Category: SMD resistors
Description: Resistor: thin film; 0402; 100Ω; 200mW; ±0.5%; -55÷175°C; 25ppm/°C
Power: 0.2W
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Resistance: 100Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0402
Case - mm: 1005
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GSC00CX3302DARL VISHAY GSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 200VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 200V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 16mm
Nominal life: 2000h
Dimensions: 12.5x16mm
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IRFR9310TRPBF IRFR9310TRPBF VISHAY IRFR9310PBF.pdf IRFR9310TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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56+1.28 EUR
100+0.86 EUR
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1000+0.62 EUR
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IRFRC20PBF IRFRC20PBF VISHAY IRFRC20PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
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IRFR110PBF IRFR110PBF VISHAY IRFR110PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
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525+0.4 EUR
1050+0.38 EUR
1500+0.37 EUR
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IRFR9110PBF IRFR9110PBF VISHAY IRFR9110.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
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60+1.2 EUR
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IRFR120PBF IRFR120PBF VISHAY IRFR120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 16nC
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Pulsed drain current: 31A
Power dissipation: 42W
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 433 Stücke:
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120+0.6 EUR
128+0.56 EUR
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IRFR420PBF IRFR420PBF VISHAY IRFR420PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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109+0.66 EUR
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IRFR014PBF IRFR014PBF VISHAY IRFR014PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 471 Stücke:
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52+1.4 EUR
60+1.21 EUR
73+0.98 EUR
95+0.76 EUR
112+0.64 EUR
150+0.52 EUR
225+0.5 EUR
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IRFR9220TRPBF IRFR9220TRPBF VISHAY IRFR9220TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1557 Stücke:
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52+1.39 EUR
100+1 EUR
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250+0.83 EUR
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IRFR420APBF IRFR420APBF VISHAY IRFR420A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 83W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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50+1.45 EUR
59+1.22 EUR
73+0.98 EUR
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88+0.81 EUR
150+0.75 EUR
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IRFR210PBF IRFR210PBF VISHAY IRFR210.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
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IRFR9310PBF IRFR9310PBF VISHAY IRFR9310PBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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46+1.56 EUR
90+0.8 EUR
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IRFR220PBF IRFR220PBF VISHAY irfr220_IRFU220.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 254 Stücke:
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103+0.7 EUR
139+0.52 EUR
155+0.46 EUR
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IRFR420TRPBF IRFR420TRPBF VISHAY IRFR420PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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79+0.92 EUR
85+0.84 EUR
104+0.69 EUR
500+0.57 EUR
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IRFR224PBF IRFR224PBF VISHAY IRFR224.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.4A; Idm: 15A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
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73+0.99 EUR
116+0.62 EUR
133+0.54 EUR
143+0.5 EUR
300+0.46 EUR
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SS33-E3/9AT ss32_ss36.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 13 inch reel
Mounting: SMD
Quantity in set/package: 3500pcs.
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Kind of package: 13 inch reel
Max. off-state voltage: 30V
Max. forward impulse current: 100A
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SS32-E3/57T ss32_ss36.pdf
SS32-E3/57T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Kind of package: 7 inch reel
Case: SMC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 850 Stücke:
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Anzahl Preis
162+0.44 EUR
206+0.35 EUR
298+0.24 EUR
355+0.2 EUR
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SS32-E3/9AT ss32_ss36.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 13 inch reel
Mounting: SMD
Kind of package: 13 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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SS32HE3_B/H ss32_ss36.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Application: automotive industry
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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SISS32ADN-T1-GE3 siss32adn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 120A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
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SISS32DN-T1-GE3 siss32dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SISS32LDN-T1-GE3 siss32ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 9.5mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE20A-E3/54 15ke_Ser.pdf
1.5KE20A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 54.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 17.1V
Breakdown voltage: 20V
Max. forward impulse current: 54.2A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
auf Bestellung 1367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
122+0.59 EUR
172+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE24A-E3/54 15ke_Ser.pdf
1.5KE24A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
93+0.77 EUR
104+0.69 EUR
136+0.53 EUR
154+0.47 EUR
250+0.4 EUR
500+0.35 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ20A-E3/57T smcj.pdf
SMCJ20A-E3/57T
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
175+0.41 EUR
247+0.29 EUR
295+0.24 EUR
500+0.21 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
VDRH07K300TSE vdrh.pdf
Hersteller: VISHAY
Category: THT varistors
Description: Varistor: metal-oxide; THT; 300VAC; 385VDC; 470V; 1.75kA; Ø9mm
Type of varistor: metal-oxide
Mounting: THT
Max. operating voltage: 300V AC; 385V DC
Varistor voltage: 470V
Varistor max current 8/20µs: 1.75kA
Terminal pitch: 5mm
Body dimensions: Ø9mm
Diameter: 9mm
Height: 9mm
Operating temperature: -40...125°C
Leads dimensions: Ø0.6x24mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UG30DPT-E3/45 ug30.pdf
UG30DPT-E3/45
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AD-3
Max. forward voltage: 1.15V
Reverse recovery time: 50ns
auf Bestellung 743 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
29+2.49 EUR
33+2.19 EUR
37+1.97 EUR
120+1.86 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045CBP-E3/4W VBT6045CBP-E3.pdf
VBT6045CBP-E3/4W
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045C-E3/8W vbt6045c.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045C-E3/4W vbt6045c.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045C-M3/8W vbt6045c.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045CBP-E3/8W irl620.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045C-M3/4W vbt6045c.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045CBP-M3/4W VBT6045CBP-M3.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBT6045CBP-M3/8W VBT6045CBP-M3.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV203-GS08 bav200-bav203-vi.pdf
BAV203-GS08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
auf Bestellung 8884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
715+0.1 EUR
947+0.076 EUR
1071+0.067 EUR
1417+0.05 EUR
1593+0.045 EUR
1662+0.043 EUR
2500+0.039 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAV202-GS08 bav200-bav203-vi.pdf
BAV202-GS08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1042+0.069 EUR
1147+0.062 EUR
1345+0.053 EUR
1613+0.044 EUR
1749+0.041 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAV20-TAP bav17-bav21-vi.pdf
BAV20-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 8739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
406+0.18 EUR
455+0.16 EUR
797+0.09 EUR
1177+0.061 EUR
1260+0.057 EUR
1493+0.048 EUR
1839+0.039 EUR
2500+0.036 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BAV20W-E3-08 BAV19W_20W_21W_Rev1.6_2-18-23.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.25A; 50ns; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV20W-E3-18 BAV19W_20W_21W_Rev1.6_2-18-23.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD
Type of diode: switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV20WS-HE3-18 bav19ws.pdf
BAV20WS-HE3-18
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 13 inch reel
Max. forward impulse current: 1A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Power dissipation: 0.2W
Leakage current: 15µA
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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VJ1206Y224KXAAT vjcommercialseries.pdf
VJ1206Y224KXAAT
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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SML4742A-E3/61 SML47xx_A.pdf
SML4742A-E3/61
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: DO214AC; SMA
Semiconductor structure: single diode
Quantity in set/package: 1800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRCW080522R0JNEA dcrcwe3.pdf
CRCW080522R0JNEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
658+0.11 EUR
2660+0.027 EUR
3552+0.02 EUR
4020+0.018 EUR
5000+0.014 EUR
Mindestbestellmenge: 658
Im Einkaufswagen  Stück im Wert von  UAH
RCA080522R0JNEA rcae3.pdf
RCA080522R0JNEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP9140PBF IRFP9140PBF.pdf
IRFP9140PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
24+2.99 EUR
28+2.63 EUR
50+2.36 EUR
100+2.1 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF9510PBF IRF9510PBF.pdf
IRF9510PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
120+0.6 EUR
135+0.53 EUR
143+0.5 EUR
250+0.47 EUR
500+0.44 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IRF9510SPBF description IRF9510S.pdf
IRF9510SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
59+1.23 EUR
68+1.06 EUR
100+0.99 EUR
250+0.9 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRF9510STRLPBF sihf9510.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9510STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
534B1103JC 533534.pdf
534B1103JC
Hersteller: VISHAY
Category: Wire multiturn potentiometers
Description: Potentiometer: shaft; multiturn; 10kΩ; 2W; ±5%; 6.35mm; Ø22.22x19mm
Type of potentiometer: shaft
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 2W
Tolerance: ±5%
Temperature coefficient: 20ppm/°C
Body dimensions: Ø22.22x19mm
Track material: wirewound
Operating temperature: -55...125°C
Diameter: 22.22mm
L shaft length: 20.7mm
Linearity tolerance: ±0.25%
Number of electrical turns: 10
Min. insulation resistance: 1GΩ
Manufacturer series: 534
Shaft surface: smooth
Potentiometer features: precise
Height: 19mm
Thread length: 8mm
Shaft diameter: 6.35mm
Shaft length: 12.7mm
auf Bestellung 708 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.32 EUR
6+14.03 EUR
10+13.51 EUR
20+13.26 EUR
50+12.87 EUR
100+12.61 EUR
200+12.36 EUR
400+12.23 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MCT0603PD2002BP100
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 20kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Mounting: SMD
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: P
Type of resistor: thin film
Operating temperature: -55...175°C
Resistance: 20kΩ
Roll diameter max.: 180mm
Power: 0.25W
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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EGP20D-E3/54 EGP20D-E3-54.pdf
EGP20D-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; 13 inch reel; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Quantity in set/package: 4000pcs.
Max. forward impulse current: 75A
Max. off-state voltage: 200V
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
166+0.43 EUR
184+0.39 EUR
500+0.33 EUR
Mindestbestellmenge: 143
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EGP20D-E3/73 EGP20D-E3-54.pdf
EGP20D-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 200V
auf Bestellung 3477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
111+0.64 EUR
139+0.51 EUR
500+0.43 EUR
1000+0.39 EUR
2000+0.38 EUR
Mindestbestellmenge: 76
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MCT0603PD1001BP100
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCT0603PD1001DP500 mcxhp.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCT0603PD1002BP100
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCT0603PD1002DP500 mcxhp.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCT0603PD1009DP500 mcxhp.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10Ω; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCS0402PD1000DE500 mcxhp.pdf
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 0402; 100Ω; 200mW; ±0.5%; -55÷175°C; 25ppm/°C
Power: 0.2W
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Resistance: 100Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0402
Case - mm: 1005
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.063 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GSC00CX3302DARL GSC.pdf
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 200VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 200V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 16mm
Nominal life: 2000h
Dimensions: 12.5x16mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9310TRPBF IRFR9310PBF.pdf IRFR9310TRPBF.pdf
IRFR9310TRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
50+1.45 EUR
56+1.28 EUR
100+0.86 EUR
500+0.69 EUR
1000+0.62 EUR
2000+0.55 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRFRC20PBF IRFRC20PBF.pdf
IRFRC20PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
auf Bestellung 2070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
101+0.71 EUR
142+0.5 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRFR110PBF IRFR110PBF.pdf
IRFR110PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
auf Bestellung 4842 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
525+0.4 EUR
1050+0.38 EUR
1500+0.37 EUR
2025+0.36 EUR
3000+0.35 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9110PBF IRFR9110.pdf
IRFR9110PBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 802 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
122+0.59 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRFR120PBF IRFR120.pdf
IRFR120PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 16nC
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Pulsed drain current: 31A
Power dissipation: 42W
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
128+0.56 EUR
135+0.53 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IRFR420PBF IRFR420PBF.pdf
IRFR420PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
109+0.66 EUR
127+0.57 EUR
150+0.54 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
IRFR014PBF IRFR014PBF.pdf
IRFR014PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
60+1.21 EUR
73+0.98 EUR
95+0.76 EUR
112+0.64 EUR
150+0.52 EUR
225+0.5 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9220TRPBF IRFR9220TRPBF.pdf
IRFR9220TRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
100+1 EUR
125+0.96 EUR
250+0.83 EUR
500+0.71 EUR
1000+0.6 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRFR420APBF IRFR420A.pdf
IRFR420APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 83W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
50+1.45 EUR
59+1.22 EUR
73+0.98 EUR
83+0.86 EUR
88+0.81 EUR
150+0.75 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRFR210PBF IRFR210.pdf
IRFR210PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
128+0.56 EUR
138+0.52 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9310PBF IRFR9310PBF.pdf
IRFR9310PBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
90+0.8 EUR
131+0.55 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220PBF description irfr220_IRFU220.pdf
IRFR220PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
103+0.7 EUR
139+0.52 EUR
155+0.46 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IRFR420TRPBF IRFR420PBF.pdf
IRFR420TRPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
85+0.84 EUR
104+0.69 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
IRFR224PBF IRFR224.pdf
IRFR224PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.4A; Idm: 15A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
116+0.62 EUR
133+0.54 EUR
143+0.5 EUR
300+0.46 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
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