Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3334) > Seite 54 nach 56
| Foto | Bezeichnung | Hersteller | Beschreibung |
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YBSM4006 | Yangjie Technology | Description: YBSM 600V 4.0A Diodes Bridge R |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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| YBSM4006 | YANGJIE TECHNOLOGY | YBSM4006-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 427 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM4008 | YANGJIE TECHNOLOGY | YBSM4008-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 2192 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM4010 | YANGJIE TECHNOLOGY | YBSM4010-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 1211 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM60005 | YANGJIE TECHNOLOGY | YBSM60005-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 2070 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM6001 | YANGJIE TECHNOLOGY | YBSM6001-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 243 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM6002 | YANGJIE TECHNOLOGY | YBSM6002-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 1232 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM6004 | YANGJIE TECHNOLOGY | YBSM6004-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 2374 Stücke: Lieferzeit 7-14 Tag (e) |
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YBSM6006 | Yangjie Technology |
Description: YBSM 600V 6.0A Diodes Bridge R Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBSM6006 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 1751 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM6006 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1751 Stücke: Lieferzeit 7-14 Tag (e) |
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| YBSM6008 | YANGJIE TECHNOLOGY |
YBSM6008-YAN SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 2528 Stücke: Lieferzeit 7-14 Tag (e) |
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YBSM6010 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM6010 | Yangjie Technology |
Description: YBS3 1000V 6.0A Diodes BridgePackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBSM6010 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1799 Stücke: Lieferzeit 7-14 Tag (e) |
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YJ2N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.33mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.33mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N70CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ7N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ7N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ7N80CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 28A Power dissipation: 49W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJA3134KA | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 1000000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJB150N06BQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD112010DG1 | Yangjie Technology |
Description: TO-252 1200V 16A Diodes Rectif Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD120N04A | Yangjie Technology |
Description: TO-252 N 40V 120A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD15N10A | Yangjie Technology |
Description: TO-252 N 100V 15A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD15N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: TRENCH POWER MV Gate charge: 16nC Pulsed drain current: 60A |
auf Bestellung 7900 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD15N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: TRENCH POWER MV Gate charge: 16nC Pulsed drain current: 60A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 7900 Stücke: Lieferzeit 7-14 Tag (e) |
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YJD180N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD20N06A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 12140 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD20N06A | Yangjie Technology |
Description: TO-252 N 60V 20A Transistors FEPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD20N06A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 5 Stücke |
auf Bestellung 12140 Stücke: Lieferzeit 7-14 Tag (e) |
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YJD40N04A | Yangjie Technology | Description: TO-252 N 40V 40A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD50N03A | Yangjie Technology |
Description: TO-252 N 30V 50A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD50N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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| YJD50N06A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 200A Power dissipation: 21.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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YJD60N02A | Yangjie Technology |
Description: TO-252 N 20V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD60N04A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD60N04A | Yangjie Technology |
Description: TO-252 N 40V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD60N04A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 5 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| YJD80G06A | YANGJIE TECHNOLOGY | YJD80G06A-YAN SMD N channel transistors |
auf Bestellung 258 Stücke: Lieferzeit 7-14 Tag (e) |
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YJD80N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD80N03B | Yangjie Technology |
Description: TO-252 N 30V 80A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD90N06A | Yangjie Technology |
Description: TO-252 N 60V 90A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG100N04A | Yangjie Technology |
Description: PDFN(5x6) N 40V 100A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG105N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG150N03A | Yangjie Technology |
Description: PDFN(5x6) N 30V 150A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG15GP10A | Yangjie Technology |
Description: PDFN(5x6) P -100V -15A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG20N06A | Yangjie Technology |
Description: PDFN(5x6) N 60V 20A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG30N06A | Yangjie Technology |
Description: PDFN(5x6) N 60V 30A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40G10A | Yangjie Technology |
Description: PDFN 5x6 N 100V 40A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40G10AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40N03A | Yangjie Technology |
Description: PDFN(5x6) N 30V 40A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40P03A | Yangjie Technology | Description: PDFN5060-8L P -30V -40A Transis |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG50N03B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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| YBSM4006 |
Hersteller: Yangjie Technology
Description: YBSM 600V 4.0A Diodes Bridge R
Description: YBSM 600V 4.0A Diodes Bridge R
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
| 18000+ | 0.29 EUR |
| 36000+ | 0.27 EUR |
| 72000+ | 0.25 EUR |
| 180000+ | 0.23 EUR |
| YBSM4006 |
Hersteller: YANGJIE TECHNOLOGY
YBSM4006-YAN SMD/THT sing. phase diode bridge rectif.
YBSM4006-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 427 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.48 EUR |
| 325+ | 0.22 EUR |
| 345+ | 0.21 EUR |
| YBSM4008 |
Hersteller: YANGJIE TECHNOLOGY
YBSM4008-YAN SMD/THT sing. phase diode bridge rectif.
YBSM4008-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 2192 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 241+ | 0.3 EUR |
| 435+ | 0.16 EUR |
| 1800+ | 0.15 EUR |
| YBSM4010 |
Hersteller: YANGJIE TECHNOLOGY
YBSM4010-YAN SMD/THT sing. phase diode bridge rectif.
YBSM4010-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 1211 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 0.47 EUR |
| 336+ | 0.21 EUR |
| 355+ | 0.2 EUR |
| YBSM60005 |
Hersteller: YANGJIE TECHNOLOGY
YBSM60005-YAN SMD/THT sing. phase diode bridge rectif.
YBSM60005-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 2070 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 169+ | 0.42 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |
| YBSM6001 |
Hersteller: YANGJIE TECHNOLOGY
YBSM6001-YAN SMD/THT sing. phase diode bridge rectif.
YBSM6001-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 243 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 196+ | 0.37 EUR |
| 243+ | 0.3 EUR |
| 1800+ | 0.2 EUR |
| YBSM6002 |
Hersteller: YANGJIE TECHNOLOGY
YBSM6002-YAN SMD/THT sing. phase diode bridge rectif.
YBSM6002-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 1232 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 277+ | 0.26 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 1800+ | 0.17 EUR |
| YBSM6004 |
Hersteller: YANGJIE TECHNOLOGY
YBSM6004-YAN SMD/THT sing. phase diode bridge rectif.
YBSM6004-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 2374 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 277+ | 0.26 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 1800+ | 0.17 EUR |
| YBSM6006 |
Hersteller: Yangjie Technology
Description: YBSM 600V 6.0A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
Description: YBSM 600V 6.0A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.43 EUR |
| 9000+ | 0.4 EUR |
| 18000+ | 0.38 EUR |
| 36000+ | 0.36 EUR |
| 72000+ | 0.32 EUR |
| 180000+ | 0.3 EUR |
| YBSM6006 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1751 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 283+ | 0.25 EUR |
| 321+ | 0.22 EUR |
| 500+ | 0.2 EUR |
| YBSM6006 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1751 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 283+ | 0.25 EUR |
| 321+ | 0.22 EUR |
| 500+ | 0.2 EUR |
| YBSM6008 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
YBSM6008-YAN SMD/THT sing. phase diode bridge rectif.
YBSM6008-YAN SMD/THT sing. phase diode bridge rectif.
auf Bestellung 2528 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 246+ | 0.29 EUR |
| 307+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| 1800+ | 0.21 EUR |
| YBSM6010 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 168+ | 0.43 EUR |
| 281+ | 0.25 EUR |
| 313+ | 0.23 EUR |
| 500+ | 0.21 EUR |
| YBSM6010 |
![]() |
Hersteller: Yangjie Technology
Description: YBS3 1000V 6.0A Diodes Bridge
Packaging: Tape & Reel (TR)
Part Status: Active
Description: YBS3 1000V 6.0A Diodes Bridge
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.4 EUR |
| 9000+ | 0.38 EUR |
| 18000+ | 0.36 EUR |
| 36000+ | 0.33 EUR |
| 72000+ | 0.3 EUR |
| 180000+ | 0.28 EUR |
| YBSM6010 |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1799 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 168+ | 0.43 EUR |
| 281+ | 0.25 EUR |
| 313+ | 0.23 EUR |
| 500+ | 0.21 EUR |
| YJ2N60CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ2N65CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ2N65CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ2N65CZ |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ4N60CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ4N65CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ4N65CZ |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ4N70CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ7N60CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ7N65CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJ7N80CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJA3134KA |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 1000000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.042 EUR |
| 50000+ | 0.04 EUR |
| 100000+ | 0.037 EUR |
| 200000+ | 0.035 EUR |
| 400000+ | 0.032 EUR |
| 1000000+ | 0.03 EUR |
| YJB150N06BQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 1.17 EUR |
| 4000+ | 1.1 EUR |
| 8000+ | 1.04 EUR |
| 16000+ | 0.97 EUR |
| 32000+ | 0.88 EUR |
| 80000+ | 0.81 EUR |
| YJD112010DG1 |
Hersteller: Yangjie Technology
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 9.35 EUR |
| 12500+ | 8.83 EUR |
| 25000+ | 8.31 EUR |
| 50000+ | 7.79 EUR |
| 100000+ | 7.01 EUR |
| 250000+ | 6.49 EUR |
| YJD120N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
| 12500+ | 0.56 EUR |
| 25000+ | 0.53 EUR |
| 50000+ | 0.5 EUR |
| 100000+ | 0.45 EUR |
| 250000+ | 0.42 EUR |
| YJD15N10A |
Hersteller: Yangjie Technology
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.32 EUR |
| 25000+ | 0.3 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
| YJD15N10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Gate charge: 16nC
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Gate charge: 16nC
Pulsed drain current: 60A
auf Bestellung 7900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 395+ | 0.18 EUR |
| 430+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 2500+ | 0.14 EUR |
| YJD15N10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Gate charge: 16nC
Pulsed drain current: 60A
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Gate charge: 16nC
Pulsed drain current: 60A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 395+ | 0.18 EUR |
| 430+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 2500+ | 0.14 EUR |
| YJD180N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
| 12500+ | 0.56 EUR |
| 25000+ | 0.53 EUR |
| 50000+ | 0.5 EUR |
| 100000+ | 0.45 EUR |
| 250000+ | 0.42 EUR |
| YJD20N06A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 12140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 300+ | 0.24 EUR |
| 335+ | 0.22 EUR |
| 500+ | 0.19 EUR |
| 2500+ | 0.17 EUR |
| 10000+ | 0.16 EUR |
| YJD20N06A |
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Hersteller: Yangjie Technology
Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
| YJD20N06A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12140 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 300+ | 0.24 EUR |
| 335+ | 0.22 EUR |
| 500+ | 0.19 EUR |
| 2500+ | 0.17 EUR |
| 10000+ | 0.16 EUR |
| YJD40N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 40A Transistors FE
Description: TO-252 N 40V 40A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.25 EUR |
| 12500+ | 0.23 EUR |
| 25000+ | 0.22 EUR |
| 50000+ | 0.21 EUR |
| 100000+ | 0.19 EUR |
| 250000+ | 0.17 EUR |
| YJD50N03A |
Hersteller: Yangjie Technology
Description: TO-252 N 30V 50A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 30V 50A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.32 EUR |
| 12500+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.24 EUR |
| 250000+ | 0.23 EUR |
| YJD50N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.43 EUR |
| 12500+ | 0.41 EUR |
| 25000+ | 0.39 EUR |
| 50000+ | 0.36 EUR |
| 100000+ | 0.33 EUR |
| 250000+ | 0.3 EUR |
| YJD50N06A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
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| YJD60N02A |
Hersteller: Yangjie Technology
Description: TO-252 N 20V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 20V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 12500+ | 0.28 EUR |
| 25000+ | 0.26 EUR |
| 50000+ | 0.24 EUR |
| 100000+ | 0.22 EUR |
| 250000+ | 0.2 EUR |
| YJD60N04A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| YJD60N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
| YJD60N04A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.18 EUR |
| 2500+ | 0.16 EUR |
| YJD80G06A |
Hersteller: YANGJIE TECHNOLOGY
YJD80G06A-YAN SMD N channel transistors
YJD80G06A-YAN SMD N channel transistors
auf Bestellung 258 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 0.43 EUR |
| 258+ | 0.27 EUR |
| 2500+ | 0.26 EUR |
| YJD80N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.41 EUR |
| 12500+ | 0.39 EUR |
| 25000+ | 0.37 EUR |
| 50000+ | 0.34 EUR |
| 100000+ | 0.31 EUR |
| 250000+ | 0.29 EUR |
| YJD80N03B |
Hersteller: Yangjie Technology
Description: TO-252 N 30V 80A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 30V 80A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 12500+ | 0.28 EUR |
| 25000+ | 0.26 EUR |
| 50000+ | 0.24 EUR |
| 100000+ | 0.22 EUR |
| 250000+ | 0.2 EUR |
| YJD90N06A |
Hersteller: Yangjie Technology
Description: TO-252 N 60V 90A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 60V 90A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.57 EUR |
| 12500+ | 0.54 EUR |
| 25000+ | 0.51 EUR |
| 50000+ | 0.48 EUR |
| 100000+ | 0.43 EUR |
| 250000+ | 0.4 EUR |
| YJG100N04A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 40V 100A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 40V 100A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.5 EUR |
| 25000+ | 0.47 EUR |
| 50000+ | 0.45 EUR |
| 100000+ | 0.42 EUR |
| 200000+ | 0.37 EUR |
| 500000+ | 0.35 EUR |
| YJG105N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.41 EUR |
| 25000+ | 0.39 EUR |
| 50000+ | 0.37 EUR |
| 100000+ | 0.34 EUR |
| 200000+ | 0.31 EUR |
| 500000+ | 0.29 EUR |
| YJG150N03A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 30V 150A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 30V 150A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.52 EUR |
| 25000+ | 0.49 EUR |
| 50000+ | 0.46 EUR |
| 100000+ | 0.43 EUR |
| 200000+ | 0.39 EUR |
| 500000+ | 0.36 EUR |
| YJG15GP10A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) P -100V -15A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) P -100V -15A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.48 EUR |
| 25000+ | 0.45 EUR |
| 50000+ | 0.43 EUR |
| 100000+ | 0.4 EUR |
| 200000+ | 0.36 EUR |
| 500000+ | 0.33 EUR |
| YJG20N06A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 60V 20A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 60V 20A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.25 EUR |
| 25000+ | 0.24 EUR |
| 50000+ | 0.22 EUR |
| 100000+ | 0.21 EUR |
| 200000+ | 0.19 EUR |
| 500000+ | 0.17 EUR |
| YJG30N06A |
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Hersteller: Yangjie Technology
Description: PDFN(5x6) N 60V 30A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 60V 30A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.32 EUR |
| 25000+ | 0.31 EUR |
| 50000+ | 0.29 EUR |
| 100000+ | 0.27 EUR |
| 200000+ | 0.24 EUR |
| 500000+ | 0.23 EUR |
| YJG40G10A |
Hersteller: Yangjie Technology
Description: PDFN 5x6 N 100V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN 5x6 N 100V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.45 EUR |
| 25000+ | 0.42 EUR |
| 50000+ | 0.4 EUR |
| 100000+ | 0.37 EUR |
| 200000+ | 0.33 EUR |
| 500000+ | 0.31 EUR |
| YJG40G10AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.88 EUR |
| 25000+ | 0.83 EUR |
| 50000+ | 0.78 EUR |
| 100000+ | 0.74 EUR |
| 200000+ | 0.66 EUR |
| 500000+ | 0.61 EUR |
| YJG40N03A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 30V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 30V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.26 EUR |
| 25000+ | 0.25 EUR |
| 50000+ | 0.23 EUR |
| 100000+ | 0.22 EUR |
| 200000+ | 0.2 EUR |
| 500000+ | 0.18 EUR |
| YJG40P03A |
Hersteller: Yangjie Technology
Description: PDFN5060-8L P -30V -40A Transis
Description: PDFN5060-8L P -30V -40A Transis
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.26 EUR |
| 200000+ | 0.23 EUR |
| 500000+ | 0.22 EUR |
| YJG50N03B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.29 EUR |
| 25000+ | 0.28 EUR |
| 50000+ | 0.26 EUR |
| 100000+ | 0.24 EUR |
| 200000+ | 0.22 EUR |
| 500000+ | 0.2 EUR |












