Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3988) > Seite 66 nach 67
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YJG105N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG150N03A | Yangjie Technology |
Description: PDFN(5x6) N 30V 150A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG15GP10A | Yangjie Technology |
Description: PDFN(5x6) P -100V -15A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG20N06A | Yangjie Technology |
Description: PDFN(5x6) N 60V 20A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG30N06A | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40G10A | Yangjie Technology |
Description: PDFN 5x6 N 100V 40A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40G10AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40N03A | Yangjie Technology |
Description: PDFN(5x6) N 30V 40A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40P03A | Yangjie Technology | Description: PDFN5060-8L P -30V -40A Transis |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG50N03B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJGD20G10A | Yangjie Technology | Description: DFN5060 N 100V 20A Transistors |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH03N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH03N06B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH03N10A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH10N02A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJJ09N03A | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL03N04A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL03N06AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL03N06B | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL05N04AQ | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL05N06AL | Yangjie Technology | Description: SOT-23 N 60V 5A Transistors FET |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2300A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W Case: SOT23 Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.2nC Technology: TRENCH POWER LV Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 18A Mounting: SMD |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2301C | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Pulsed drain current: -14A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2960 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2301CQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301D | Yangjie Technology |
Description: SOT-23 P -19V -3.8A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 900000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301D | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -3A Pulsed drain current: -15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 87mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL2301G | Yangjie Technology |
Description: SOT-23 P -19V -2A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301N | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2302A | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2305A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W Drain-source voltage: -15V Drain current: -4.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Technology: TRENCH POWER LV Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -23A Mounting: SMD Case: SOT23 |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2305B | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W Drain-source voltage: -20V Drain current: -4.4A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Technology: TRENCH POWER LV Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -22A Mounting: SMD Case: SOT23 |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2312A | Yangjie Technology |
Description: SOT-23 N 20V 6.8A Transistors F Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2312AL | Yangjie Technology |
Description: SOT-23 N 20V 7.6A Transistors F Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2312AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3400A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 23A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL3401A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3401AL | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3401AL | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL3401AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3404AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3407A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL3407AL | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJM04N10A | Yangjie Technology | Description: SOT-223 N 100V 4A Transistors F |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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YJM05N06A | Yangjie Technology | Description: SOT-223 N 60V 5A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ13N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ15GP10A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A Type of transistor: P-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: -100V Drain current: -9.5A Pulsed drain current: -45A Power dissipation: 17.2W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3.98nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3946 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ2012A | Yangjie Technology |
Description: DFN2020-6L N 20V 12A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ20N04A | Yangjie Technology |
Description: DFN(3.3x3.3) N 40V 20A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ20P03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ2301A | Yangjie Technology | Description: DFN2020-6L P -20V -4A Transisto |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ3400A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A Pulsed drain current: 30A Power dissipation: 2W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ3407A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.4A Pulsed drain current: -22A Power dissipation: 1.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 11.65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
YJQ35G10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 120A Power dissipation: 54W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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YJQ35N04A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ35N04A | Yangjie Technology | Description: DFN(3.3x3.3) N 40V 35A Transist |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ4606A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ50N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 50A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ50P03A | Yangjie Technology |
Description: DFN(3.3x3.3) P -30V -50A Transi Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ60N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 60A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQD12N03A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
YJG105N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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5000+ | 0.41 EUR |
25000+ | 0.39 EUR |
50000+ | 0.37 EUR |
100000+ | 0.34 EUR |
200000+ | 0.31 EUR |
500000+ | 0.29 EUR |
YJG150N03A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 30V 150A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 30V 150A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.52 EUR |
25000+ | 0.49 EUR |
50000+ | 0.46 EUR |
100000+ | 0.43 EUR |
200000+ | 0.39 EUR |
500000+ | 0.36 EUR |
YJG15GP10A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) P -100V -15A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) P -100V -15A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.48 EUR |
25000+ | 0.45 EUR |
50000+ | 0.43 EUR |
100000+ | 0.40 EUR |
200000+ | 0.36 EUR |
500000+ | 0.33 EUR |
YJG20N06A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 60V 20A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 60V 20A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.25 EUR |
25000+ | 0.24 EUR |
50000+ | 0.22 EUR |
100000+ | 0.21 EUR |
200000+ | 0.19 EUR |
500000+ | 0.17 EUR |
YJG30N06A |
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Hersteller: Yangjie Technology
Description: PDFN(5x6) N 60V 30A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 60V 30A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.32 EUR |
25000+ | 0.31 EUR |
50000+ | 0.29 EUR |
100000+ | 0.27 EUR |
200000+ | 0.24 EUR |
500000+ | 0.23 EUR |
YJG40G10A |
Hersteller: Yangjie Technology
Description: PDFN 5x6 N 100V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN 5x6 N 100V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.45 EUR |
25000+ | 0.42 EUR |
50000+ | 0.40 EUR |
100000+ | 0.37 EUR |
200000+ | 0.33 EUR |
500000+ | 0.31 EUR |
YJG40G10AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.88 EUR |
25000+ | 0.83 EUR |
50000+ | 0.78 EUR |
100000+ | 0.74 EUR |
200000+ | 0.66 EUR |
500000+ | 0.61 EUR |
YJG40N03A |
Hersteller: Yangjie Technology
Description: PDFN(5x6) N 30V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: PDFN(5x6) N 30V 40A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.26 EUR |
25000+ | 0.25 EUR |
50000+ | 0.23 EUR |
100000+ | 0.22 EUR |
200000+ | 0.20 EUR |
500000+ | 0.18 EUR |
YJG40P03A |
Hersteller: Yangjie Technology
Description: PDFN5060-8L P -30V -40A Transis
Description: PDFN5060-8L P -30V -40A Transis
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.31 EUR |
25000+ | 0.29 EUR |
50000+ | 0.28 EUR |
100000+ | 0.26 EUR |
200000+ | 0.23 EUR |
500000+ | 0.22 EUR |
YJG50N03B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.29 EUR |
25000+ | 0.28 EUR |
50000+ | 0.26 EUR |
100000+ | 0.24 EUR |
200000+ | 0.22 EUR |
500000+ | 0.20 EUR |
YJGD20G10A |
Hersteller: Yangjie Technology
Description: DFN5060 N 100V 20A Transistors
Description: DFN5060 N 100V 20A Transistors
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.84 EUR |
25000+ | 0.80 EUR |
50000+ | 0.75 EUR |
100000+ | 0.70 EUR |
200000+ | 0.63 EUR |
500000+ | 0.59 EUR |
YJH03N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.09 EUR |
5000+ | 0.09 EUR |
10000+ | 0.08 EUR |
20000+ | 0.08 EUR |
40000+ | 0.07 EUR |
100000+ | 0.06 EUR |
YJH03N06B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.09 EUR |
5000+ | 0.09 EUR |
10000+ | 0.08 EUR |
20000+ | 0.08 EUR |
40000+ | 0.07 EUR |
100000+ | 0.06 EUR |
YJH03N10A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.16 EUR |
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
20000+ | 0.13 EUR |
40000+ | 0.12 EUR |
100000+ | 0.11 EUR |
YJH10N02A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.16 EUR |
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
20000+ | 0.13 EUR |
40000+ | 0.12 EUR |
100000+ | 0.11 EUR |
YJJ09N03A |
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Hersteller: Yangjie Technology
Description: SOT-23-6L N 30V 9A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L N 30V 9A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
15000+ | 0.14 EUR |
60000+ | 0.13 EUR |
120000+ | 0.11 EUR |
YJL03N04A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.05 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
YJL03N06AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
30000+ | 0.10 EUR |
60000+ | 0.09 EUR |
120000+ | 0.08 EUR |
300000+ | 0.08 EUR |
YJL03N06B |
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Hersteller: Yangjie Technology
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.06 EUR |
15000+ | 0.06 EUR |
30000+ | 0.05 EUR |
60000+ | 0.05 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
YJL05N04AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.09 EUR |
15000+ | 0.08 EUR |
30000+ | 0.08 EUR |
60000+ | 0.07 EUR |
120000+ | 0.07 EUR |
300000+ | 0.06 EUR |
YJL05N06AL |
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 5A Transistors FET
Description: SOT-23 N 60V 5A Transistors FET
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
30000+ | 0.12 EUR |
60000+ | 0.11 EUR |
120000+ | 0.10 EUR |
300000+ | 0.09 EUR |
YJL2300A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 18A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 18A
Mounting: SMD
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1240+ | 0.06 EUR |
1920+ | 0.04 EUR |
2160+ | 0.03 EUR |
2440+ | 0.03 EUR |
2580+ | 0.03 EUR |
YJL2301C |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1050+ | 0.07 EUR |
1640+ | 0.04 EUR |
1820+ | 0.04 EUR |
1920+ | 0.04 EUR |
YJL2301CQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.10 EUR |
15000+ | 0.10 EUR |
30000+ | 0.09 EUR |
60000+ | 0.09 EUR |
120000+ | 0.08 EUR |
300000+ | 0.07 EUR |
YJL2301D |
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.06 EUR |
15000+ | 0.06 EUR |
30000+ | 0.05 EUR |
60000+ | 0.05 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
600000+ | 0.03 EUR |
YJL2301D |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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YJL2301G |
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.04 EUR |
15000+ | 0.04 EUR |
30000+ | 0.04 EUR |
60000+ | 0.04 EUR |
120000+ | 0.03 EUR |
300000+ | 0.03 EUR |
YJL2301N |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.04 EUR |
15000+ | 0.04 EUR |
30000+ | 0.03 EUR |
60000+ | 0.03 EUR |
120000+ | 0.03 EUR |
300000+ | 0.03 EUR |
YJL2302A |
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Hersteller: Yangjie Technology
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.04 EUR |
30000+ | 0.04 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.03 EUR |
YJL2305A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Drain-source voltage: -15V
Drain current: -4.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -23A
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Drain-source voltage: -15V
Drain current: -4.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -23A
Mounting: SMD
Case: SOT23
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
320+ | 0.23 EUR |
YJL2305B |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Drain-source voltage: -20V
Drain current: -4.4A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -22A
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Drain-source voltage: -20V
Drain current: -4.4A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -22A
Mounting: SMD
Case: SOT23
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
600+ | 0.12 EUR |
YJL2312A |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.06 EUR |
15000+ | 0.06 EUR |
30000+ | 0.06 EUR |
60000+ | 0.05 EUR |
120000+ | 0.05 EUR |
300000+ | 0.04 EUR |
YJL2312AL |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.08 EUR |
15000+ | 0.07 EUR |
30000+ | 0.07 EUR |
60000+ | 0.07 EUR |
120000+ | 0.06 EUR |
300000+ | 0.06 EUR |
YJL2312AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
30000+ | 0.10 EUR |
60000+ | 0.09 EUR |
120000+ | 0.08 EUR |
300000+ | 0.08 EUR |
YJL3400A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL3401A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1160+ | 0.06 EUR |
1280+ | 0.06 EUR |
1620+ | 0.04 EUR |
1720+ | 0.04 EUR |
YJL3401AL |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.09 EUR |
15000+ | 0.08 EUR |
30000+ | 0.08 EUR |
60000+ | 0.07 EUR |
120000+ | 0.07 EUR |
300000+ | 0.06 EUR |
YJL3401AL |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL3401AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
30000+ | 0.10 EUR |
60000+ | 0.09 EUR |
120000+ | 0.08 EUR |
300000+ | 0.08 EUR |
YJL3404AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.12 EUR |
15000+ | 0.11 EUR |
30000+ | 0.10 EUR |
60000+ | 0.10 EUR |
120000+ | 0.09 EUR |
300000+ | 0.08 EUR |
YJL3407A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL3407AL |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJM04N10A |
Hersteller: Yangjie Technology
Description: SOT-223 N 100V 4A Transistors F
Description: SOT-223 N 100V 4A Transistors F
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.17 EUR |
YJM05N06A |
Hersteller: Yangjie Technology
Description: SOT-223 N 60V 5A Transistors FE
Description: SOT-223 N 60V 5A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.20 EUR |
12500+ | 0.19 EUR |
25000+ | 0.18 EUR |
50000+ | 0.17 EUR |
100000+ | 0.15 EUR |
250000+ | 0.14 EUR |
YJQ13N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
15000+ | 0.14 EUR |
30000+ | 0.13 EUR |
60000+ | 0.12 EUR |
120000+ | 0.11 EUR |
300000+ | 0.10 EUR |
YJQ15GP10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3946 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
198+ | 0.36 EUR |
271+ | 0.26 EUR |
309+ | 0.23 EUR |
327+ | 0.22 EUR |
500+ | 0.21 EUR |
YJQ2012A |
Hersteller: Yangjie Technology
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.12 EUR |
15000+ | 0.11 EUR |
30000+ | 0.10 EUR |
60000+ | 0.10 EUR |
120000+ | 0.09 EUR |
300000+ | 0.08 EUR |
YJQ20N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 20A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 40V 20A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.23 EUR |
25000+ | 0.21 EUR |
50000+ | 0.20 EUR |
100000+ | 0.19 EUR |
200000+ | 0.17 EUR |
500000+ | 0.16 EUR |
YJQ20P03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.25 EUR |
25000+ | 0.23 EUR |
50000+ | 0.22 EUR |
100000+ | 0.21 EUR |
200000+ | 0.19 EUR |
500000+ | 0.17 EUR |
YJQ2301A |
Hersteller: Yangjie Technology
Description: DFN2020-6L P -20V -4A Transisto
Description: DFN2020-6L P -20V -4A Transisto
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
15000+ | 0.14 EUR |
30000+ | 0.13 EUR |
60000+ | 0.12 EUR |
120000+ | 0.11 EUR |
300000+ | 0.10 EUR |
YJQ3400A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
480+ | 0.15 EUR |
840+ | 0.09 EUR |
1000+ | 0.07 EUR |
1055+ | 0.07 EUR |
YJQ3407A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJQ35G10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJQ35N04A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
340+ | 0.21 EUR |
375+ | 0.19 EUR |
420+ | 0.17 EUR |
465+ | 0.15 EUR |
YJQ35N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 35A Transist
Description: DFN(3.3x3.3) N 40V 35A Transist
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.31 EUR |
25000+ | 0.30 EUR |
50000+ | 0.28 EUR |
100000+ | 0.26 EUR |
200000+ | 0.23 EUR |
500000+ | 0.22 EUR |
YJQ4606A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.20 EUR |
25000+ | 0.19 EUR |
50000+ | 0.18 EUR |
100000+ | 0.17 EUR |
200000+ | 0.15 EUR |
500000+ | 0.14 EUR |
YJQ50N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.30 EUR |
25000+ | 0.29 EUR |
50000+ | 0.27 EUR |
100000+ | 0.25 EUR |
200000+ | 0.23 EUR |
500000+ | 0.21 EUR |
YJQ50P03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.60 EUR |
25000+ | 0.56 EUR |
50000+ | 0.53 EUR |
100000+ | 0.50 EUR |
200000+ | 0.45 EUR |
500000+ | 0.42 EUR |
YJQ60N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.49 EUR |
25000+ | 0.46 EUR |
50000+ | 0.43 EUR |
100000+ | 0.40 EUR |
200000+ | 0.36 EUR |
500000+ | 0.34 EUR |
YJQD12N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH