Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3986) > Seite 66 nach 67
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YJG40P03A | Yangjie Technology | Description: PDFN5060-8L P -30V -40A Transis |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG50N03B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG80G06A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 320A Power dissipation: 38W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2216 Stücke: Lieferzeit 14-21 Tag (e) |
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YJGD20G10A | Yangjie Technology | Description: DFN5060 N 100V 20A Transistors |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH03N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH03N06B | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH03N10A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT89 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 2.4A On-state resistance: 0.12Ω Power dissipation: 4W Gate charge: 16nC Technology: TRENCH POWER MV Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A |
auf Bestellung 9185 Stücke: Lieferzeit 14-21 Tag (e) |
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YJH03N10A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJH10N02A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJJ09N03A | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL02N10A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL03G10A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 121A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL03N04A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL03N06A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.4A Pulsed drain current: 12A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 5985 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL03N06AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL03N06B | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL05N04AQ | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL05N06AL | Yangjie Technology | Description: SOT-23 N 60V 5A Transistors FET |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2300A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 49mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL2301CQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301D | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -3A Pulsed drain current: -15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 87mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL2301D | Yangjie Technology |
Description: SOT-23 P -19V -3.8A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 900000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301F | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -8A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL2301G | Yangjie Technology |
Description: SOT-23 P -19V -2A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2301N | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2302A | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2302A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 37mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1050 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2305A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W Drain-source voltage: -15V Drain current: -4.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Technology: TRENCH POWER LV Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -23A Mounting: SMD Case: SOT23 |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2305B | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W Drain-source voltage: -20V Drain current: -4.4A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Technology: TRENCH POWER LV Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -22A Mounting: SMD Case: SOT23 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2312A | Yangjie Technology |
Description: SOT-23 N 20V 6.8A Transistors F Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2312A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W Mounting: SMD Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.6nC Technology: TRENCH POWER LV Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 27A Case: SOT23 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2312AL | Yangjie Technology |
Description: SOT-23 N 20V 7.6A Transistors F Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL2312AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3400A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 23A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3220 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3401A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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YJL3401AL | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3401AL | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3401AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3404AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJL3407A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3407AL | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3330 Stücke: Lieferzeit 14-21 Tag (e) |
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YJM04N10A | Yangjie Technology | Description: SOT-223 N 100V 4A Transistors F |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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YJM05N06A | Yangjie Technology | Description: SOT-223 N 60V 5A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ13N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ2012A | Yangjie Technology |
Description: DFN2020-6L N 20V 12A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ20N04A | Yangjie Technology |
Description: DFN(3.3x3.3) N 40V 20A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ20P03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ2301A | Yangjie Technology | Description: DFN2020-6L P -20V -4A Transisto |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ3400A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A Pulsed drain current: 30A Power dissipation: 2W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ3407A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.4A Pulsed drain current: -22A Power dissipation: 1.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 11.65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
YJQ35G10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 120A Power dissipation: 54W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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YJQ35N04A | Yangjie Technology | Description: DFN(3.3x3.3) N 40V 35A Transist |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ4606A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ50N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 50A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ50P03A | Yangjie Technology |
Description: DFN(3.3x3.3) P -30V -50A Transi Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQ60N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 60A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJQD12N03A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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YJQD25N04A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJR20N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 495000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJS03N10A | Yangjie Technology |
Description: SOT-23-6L N 100V 3A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJG40P03A |
Hersteller: Yangjie Technology
Description: PDFN5060-8L P -30V -40A Transis
Description: PDFN5060-8L P -30V -40A Transis
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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5000+ | 0.31 EUR |
25000+ | 0.29 EUR |
50000+ | 0.28 EUR |
100000+ | 0.26 EUR |
200000+ | 0.23 EUR |
500000+ | 0.22 EUR |
YJG50N03B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.29 EUR |
25000+ | 0.28 EUR |
50000+ | 0.26 EUR |
100000+ | 0.24 EUR |
200000+ | 0.22 EUR |
500000+ | 0.2 EUR |
YJG80G06A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 320A
Power dissipation: 38W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 320A
Power dissipation: 38W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2216 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
127+ | 0.56 EUR |
142+ | 0.51 EUR |
168+ | 0.43 EUR |
177+ | 0.4 EUR |
YJGD20G10A |
Hersteller: Yangjie Technology
Description: DFN5060 N 100V 20A Transistors
Description: DFN5060 N 100V 20A Transistors
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.84 EUR |
25000+ | 0.8 EUR |
50000+ | 0.75 EUR |
100000+ | 0.7 EUR |
200000+ | 0.63 EUR |
500000+ | 0.59 EUR |
YJH03N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.092 EUR |
5000+ | 0.087 EUR |
10000+ | 0.082 EUR |
20000+ | 0.077 EUR |
40000+ | 0.069 EUR |
100000+ | 0.064 EUR |
YJH03N06B |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.092 EUR |
5000+ | 0.087 EUR |
10000+ | 0.082 EUR |
20000+ | 0.077 EUR |
40000+ | 0.069 EUR |
100000+ | 0.064 EUR |
YJH03N10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.4A
On-state resistance: 0.12Ω
Power dissipation: 4W
Gate charge: 16nC
Technology: TRENCH POWER MV
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.4A
On-state resistance: 0.12Ω
Power dissipation: 4W
Gate charge: 16nC
Technology: TRENCH POWER MV
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
auf Bestellung 9185 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.18 EUR |
585+ | 0.12 EUR |
820+ | 0.087 EUR |
870+ | 0.083 EUR |
YJH03N10A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.16 EUR |
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
20000+ | 0.13 EUR |
40000+ | 0.12 EUR |
100000+ | 0.11 EUR |
YJH10N02A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.16 EUR |
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
20000+ | 0.13 EUR |
40000+ | 0.12 EUR |
100000+ | 0.11 EUR |
YJJ09N03A |
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Hersteller: Yangjie Technology
Description: SOT-23-6L N 30V 9A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L N 30V 9A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
15000+ | 0.14 EUR |
60000+ | 0.13 EUR |
120000+ | 0.11 EUR |
YJL02N10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
760+ | 0.094 EUR |
1320+ | 0.054 EUR |
1590+ | 0.045 EUR |
1680+ | 0.043 EUR |
YJL03G10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
340+ | 0.21 EUR |
YJL03N04A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.053 EUR |
15000+ | 0.049 EUR |
30000+ | 0.046 EUR |
60000+ | 0.044 EUR |
120000+ | 0.039 EUR |
300000+ | 0.037 EUR |
YJL03N06A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
1415+ | 0.051 EUR |
1735+ | 0.041 EUR |
1835+ | 0.039 EUR |
YJL03N06AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
30000+ | 0.1 EUR |
60000+ | 0.093 EUR |
120000+ | 0.084 EUR |
300000+ | 0.077 EUR |
YJL03N06B |
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Hersteller: Yangjie Technology
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.059 EUR |
15000+ | 0.056 EUR |
30000+ | 0.053 EUR |
60000+ | 0.049 EUR |
120000+ | 0.044 EUR |
300000+ | 0.041 EUR |
YJL05N04AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.085 EUR |
15000+ | 0.081 EUR |
30000+ | 0.076 EUR |
60000+ | 0.071 EUR |
120000+ | 0.065 EUR |
300000+ | 0.059 EUR |
YJL05N06AL |
Hersteller: Yangjie Technology
Description: SOT-23 N 60V 5A Transistors FET
Description: SOT-23 N 60V 5A Transistors FET
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
30000+ | 0.12 EUR |
60000+ | 0.11 EUR |
120000+ | 0.1 EUR |
300000+ | 0.092 EUR |
YJL2300A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL2301CQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.1 EUR |
15000+ | 0.097 EUR |
30000+ | 0.092 EUR |
60000+ | 0.086 EUR |
120000+ | 0.077 EUR |
300000+ | 0.072 EUR |
YJL2301D |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL2301D |
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.058 EUR |
15000+ | 0.056 EUR |
30000+ | 0.053 EUR |
60000+ | 0.049 EUR |
120000+ | 0.044 EUR |
300000+ | 0.04 EUR |
600000+ | 0.033 EUR |
YJL2301F |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL2301G |
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.042 EUR |
15000+ | 0.04 EUR |
30000+ | 0.037 EUR |
60000+ | 0.035 EUR |
120000+ | 0.032 EUR |
300000+ | 0.03 EUR |
YJL2301N |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.039 EUR |
15000+ | 0.037 EUR |
30000+ | 0.033 EUR |
60000+ | 0.032 EUR |
120000+ | 0.028 EUR |
300000+ | 0.026 EUR |
YJL2302A |
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Hersteller: Yangjie Technology
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.048 EUR |
15000+ | 0.044 EUR |
30000+ | 0.042 EUR |
60000+ | 0.039 EUR |
120000+ | 0.035 EUR |
300000+ | 0.033 EUR |
YJL2302A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1050 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1050+ | 0.069 EUR |
YJL2305A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Drain-source voltage: -15V
Drain current: -4.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -23A
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Drain-source voltage: -15V
Drain current: -4.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -23A
Mounting: SMD
Case: SOT23
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.19 EUR |
YJL2305B |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Drain-source voltage: -20V
Drain current: -4.4A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -22A
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Drain-source voltage: -20V
Drain current: -4.4A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -22A
Mounting: SMD
Case: SOT23
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1340+ | 0.054 EUR |
1480+ | 0.048 EUR |
1920+ | 0.037 EUR |
2040+ | 0.035 EUR |
YJL2312A |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.062 EUR |
15000+ | 0.058 EUR |
30000+ | 0.055 EUR |
60000+ | 0.051 EUR |
120000+ | 0.046 EUR |
300000+ | 0.044 EUR |
YJL2312A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1180+ | 0.061 EUR |
1310+ | 0.055 EUR |
1710+ | 0.042 EUR |
1810+ | 0.04 EUR |
YJL2312AL |
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.079 EUR |
15000+ | 0.074 EUR |
30000+ | 0.07 EUR |
60000+ | 0.065 EUR |
120000+ | 0.058 EUR |
300000+ | 0.055 EUR |
YJL2312AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
30000+ | 0.1 EUR |
60000+ | 0.093 EUR |
120000+ | 0.084 EUR |
300000+ | 0.077 EUR |
YJL3400A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3220 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1180+ | 0.061 EUR |
1320+ | 0.054 EUR |
1720+ | 0.042 EUR |
1820+ | 0.039 EUR |
YJL3401A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJL3401AL |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.088 EUR |
15000+ | 0.083 EUR |
30000+ | 0.079 EUR |
60000+ | 0.074 EUR |
120000+ | 0.067 EUR |
300000+ | 0.062 EUR |
YJL3401AL |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
645+ | 0.11 EUR |
1460+ | 0.049 EUR |
1535+ | 0.047 EUR |
1640+ | 0.044 EUR |
3000+ | 0.042 EUR |
YJL3401AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
30000+ | 0.1 EUR |
60000+ | 0.093 EUR |
120000+ | 0.084 EUR |
300000+ | 0.077 EUR |
YJL3404AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.12 EUR |
15000+ | 0.11 EUR |
30000+ | 0.1 EUR |
60000+ | 0.097 EUR |
120000+ | 0.088 EUR |
300000+ | 0.081 EUR |
YJL3407A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
295+ | 0.24 EUR |
585+ | 0.12 EUR |
838+ | 0.085 EUR |
1049+ | 0.068 EUR |
1725+ | 0.041 EUR |
1825+ | 0.039 EUR |
YJL3407AL |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3330 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
930+ | 0.077 EUR |
1470+ | 0.049 EUR |
1660+ | 0.043 EUR |
1750+ | 0.041 EUR |
3000+ | 0.039 EUR |
YJM04N10A |
Hersteller: Yangjie Technology
Description: SOT-223 N 100V 4A Transistors F
Description: SOT-223 N 100V 4A Transistors F
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.17 EUR |
YJM05N06A |
Hersteller: Yangjie Technology
Description: SOT-223 N 60V 5A Transistors FE
Description: SOT-223 N 60V 5A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.2 EUR |
12500+ | 0.19 EUR |
25000+ | 0.18 EUR |
50000+ | 0.17 EUR |
100000+ | 0.15 EUR |
250000+ | 0.14 EUR |
YJQ13N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
15000+ | 0.14 EUR |
30000+ | 0.13 EUR |
60000+ | 0.12 EUR |
120000+ | 0.11 EUR |
300000+ | 0.1 EUR |
YJQ2012A |
Hersteller: Yangjie Technology
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.12 EUR |
15000+ | 0.11 EUR |
30000+ | 0.1 EUR |
60000+ | 0.099 EUR |
120000+ | 0.088 EUR |
300000+ | 0.081 EUR |
YJQ20N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 20A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 40V 20A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.23 EUR |
25000+ | 0.21 EUR |
50000+ | 0.2 EUR |
100000+ | 0.19 EUR |
200000+ | 0.17 EUR |
500000+ | 0.16 EUR |
YJQ20P03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.25 EUR |
25000+ | 0.23 EUR |
50000+ | 0.22 EUR |
100000+ | 0.21 EUR |
200000+ | 0.19 EUR |
500000+ | 0.17 EUR |
YJQ2301A |
Hersteller: Yangjie Technology
Description: DFN2020-6L P -20V -4A Transisto
Description: DFN2020-6L P -20V -4A Transisto
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
15000+ | 0.14 EUR |
30000+ | 0.13 EUR |
60000+ | 0.12 EUR |
120000+ | 0.11 EUR |
300000+ | 0.1 EUR |
YJQ3400A |
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Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
880+ | 0.082 EUR |
1015+ | 0.07 EUR |
1075+ | 0.067 EUR |
YJQ3407A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJQ35G10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJQ35N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 35A Transist
Description: DFN(3.3x3.3) N 40V 35A Transist
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.31 EUR |
25000+ | 0.3 EUR |
50000+ | 0.28 EUR |
100000+ | 0.26 EUR |
200000+ | 0.23 EUR |
500000+ | 0.22 EUR |
YJQ4606A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.2 EUR |
25000+ | 0.19 EUR |
50000+ | 0.18 EUR |
100000+ | 0.17 EUR |
200000+ | 0.15 EUR |
500000+ | 0.14 EUR |
YJQ50N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.3 EUR |
25000+ | 0.29 EUR |
50000+ | 0.27 EUR |
100000+ | 0.25 EUR |
200000+ | 0.23 EUR |
500000+ | 0.21 EUR |
YJQ50P03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.6 EUR |
25000+ | 0.56 EUR |
50000+ | 0.53 EUR |
100000+ | 0.5 EUR |
200000+ | 0.45 EUR |
500000+ | 0.42 EUR |
YJQ60N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.49 EUR |
25000+ | 0.46 EUR |
50000+ | 0.43 EUR |
100000+ | 0.4 EUR |
200000+ | 0.36 EUR |
500000+ | 0.34 EUR |
YJQD12N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJQD25N04A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.31 EUR |
25000+ | 0.3 EUR |
50000+ | 0.28 EUR |
100000+ | 0.26 EUR |
200000+ | 0.23 EUR |
500000+ | 0.22 EUR |
YJR20N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 495000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4950+ | 0.25 EUR |
24750+ | 0.24 EUR |
49500+ | 0.22 EUR |
99000+ | 0.21 EUR |
198000+ | 0.19 EUR |
495000+ | 0.18 EUR |
YJS03N10A |
Hersteller: Yangjie Technology
Description: SOT-23-6L N 100V 3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L N 100V 3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.16 EUR |
15000+ | 0.15 EUR |
30000+ | 0.14 EUR |
120000+ | 0.12 EUR |
300000+ | 0.11 EUR |