Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3992) > Seite 65 nach 67
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UF5402 | YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns |
auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5403 | YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns |
auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5404 | YANGJIE TECHNOLOGY |
![]() ![]() Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO201AD; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.3V Reverse recovery time: 50ns |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5406 | YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO201AD; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.7V Reverse recovery time: 75ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5407 | YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO201AD; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.7V Reverse recovery time: 75ns |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5408 | YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO201AD; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.7V Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UG2DA | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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UG2DBF | Yangjie Technology |
Description: Diodes - Rectifiers - Single SMB Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMD22N | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMD3N | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMH3N | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMX1N | Yangjie Technology |
Description: SOT-363 NPN+NPN 0.2W 0.15A 60V T Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMZ1N | Yangjie Technology |
Description: SOT-363 NPN+PNP 0.2W 0.15A 60 -6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz, 140MHz Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBS2006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 2A; Ifsm: 75A; YBS; SMT Electrical mounting: SMT Max. off-state voltage: 0.6kV Load current: 2A Max. forward impulse current: 75A Kind of package: reel; tape Type of bridge rectifier: single-phase Case: YBS |
auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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YBS2008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 2A; Ifsm: 75A; YBS; SMT Electrical mounting: SMT Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 75A Kind of package: reel; tape Type of bridge rectifier: single-phase Case: YBS |
auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) |
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YBS2008 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers YBS 2 Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBS2010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 2A; Ifsm: 75A; YBS; SMT Electrical mounting: SMT Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 75A Kind of package: reel; tape Type of bridge rectifier: single-phase Case: YBS |
auf Bestellung 2730 Stücke: Lieferzeit 14-21 Tag (e) |
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YBS2206 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 2.2A; Ifsm: 90A; YBS; SMT Electrical mounting: SMT Max. off-state voltage: 0.6kV Load current: 2.2A Max. forward impulse current: 90A Kind of package: reel; tape Type of bridge rectifier: single-phase Case: YBS |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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YBS2208 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 2.2A; Ifsm: 90A; YBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2.2A Max. forward impulse current: 90A Case: YBS Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 2955 Stücke: Lieferzeit 14-21 Tag (e) |
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YBS2210 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 2.2A; Ifsm: 90A; YBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2.2A Max. forward impulse current: 90A Case: YBS Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 2245 Stücke: Lieferzeit 14-21 Tag (e) |
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YBS3008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 3A; Ifsm: 110A; YBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 3A Max. forward impulse current: 110A Case: YBS Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 1710 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM40005 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 50V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 616 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM4001 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 100V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 1306 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM4004 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 400V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM4006 | Yangjie Technology | Description: YBSM 600V 4.0A Diodes Bridge R |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBSM4006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 952 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM4008 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 2528 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM4010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 120A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YBSM6006 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 1784 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM6006 | Yangjie Technology |
Description: YBSM 600V 6.0A Diodes Bridge R Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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YBSM6010 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 150A Case: YBS3 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
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YBSM6010 | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJ10N60CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.33mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ2N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.33mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N65CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ4N65CZ | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.33mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ7N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ7N65CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 25A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJ7N80CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 28A Power dissipation: 49W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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YJA3134KA | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 1000000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJB150N06BQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD112010DG1 | Yangjie Technology |
Description: TO-252 1200V 16A Diodes Rectif Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD120N04A | Yangjie Technology |
Description: TO-252 N 40V 120A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD15N10A | Yangjie Technology |
Description: TO-252 N 100V 15A Transistors F Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD15N10A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD180N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD20N06A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3090 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD20N06A | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD40N04A | Yangjie Technology | Description: TO-252 N 40V 40A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD50N03A | Yangjie Technology |
Description: TO-252 N 30V 50A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD50N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD50N06A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 200A Power dissipation: 21.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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YJD60N02A | Yangjie Technology |
Description: TO-252 N 20V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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YJD60N04A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 12250 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD60N04A | Yangjie Technology |
Description: TO-252 N 40V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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UF5402 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
270+ | 0.27 EUR |
685+ | 0.10 EUR |
785+ | 0.09 EUR |
850+ | 0.08 EUR |
UF5403 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
325+ | 0.22 EUR |
835+ | 0.09 EUR |
945+ | 0.08 EUR |
990+ | 0.07 EUR |
UF5404 | ![]() |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
335+ | 0.21 EUR |
435+ | 0.16 EUR |
UF5406 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
300+ | 0.24 EUR |
UF5407 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
325+ | 0.22 EUR |
675+ | 0.11 EUR |
UF5408 |
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Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
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Stück im Wert von UAH
UG2DA |
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Hersteller: Yangjie Technology
Description: SMA 200V 2.0A Diodes Rectifier
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SMA 200V 2.0A Diodes Rectifier
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.15 EUR |
25000+ | 0.14 EUR |
50000+ | 0.13 EUR |
100000+ | 0.12 EUR |
200000+ | 0.11 EUR |
500000+ | 0.10 EUR |
UG2DBF |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SMB
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.19 EUR |
25000+ | 0.18 EUR |
50000+ | 0.17 EUR |
100000+ | 0.15 EUR |
200000+ | 0.14 EUR |
500000+ | 0.13 EUR |
UMD22N |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.04 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.03 EUR |
UMD3N |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.05 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
UMH3N |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.05 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
UMX1N |
Hersteller: Yangjie Technology
Description: SOT-363 NPN+NPN 0.2W 0.15A 60V T
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-363
Part Status: Active
Description: SOT-363 NPN+NPN 0.2W 0.15A 60V T
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.04 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
UMZ1N |
Hersteller: Yangjie Technology
Description: SOT-363 NPN+PNP 0.2W 0.15A 60 -6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: SOT-363
Part Status: Active
Description: SOT-363 NPN+PNP 0.2W 0.15A 60 -6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.04 EUR |
60000+ | 0.04 EUR |
120000+ | 0.04 EUR |
300000+ | 0.04 EUR |
YBS2006 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 2A; Ifsm: 75A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 75A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 2A; Ifsm: 75A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 75A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
645+ | 0.11 EUR |
740+ | 0.10 EUR |
850+ | 0.08 EUR |
895+ | 0.08 EUR |
YBS2008 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 2A; Ifsm: 75A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 75A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 2A; Ifsm: 75A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 75A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
YBS2008 |
Hersteller: Yangjie Technology
Description: Diodes - Bridge Rectifiers YBS 2
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Bridge Rectifiers YBS 2
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.20 EUR |
15000+ | 0.19 EUR |
30000+ | 0.17 EUR |
60000+ | 0.16 EUR |
120000+ | 0.15 EUR |
300000+ | 0.14 EUR |
YBS2010 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 2A; Ifsm: 75A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 75A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 2A; Ifsm: 75A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 75A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
645+ | 0.11 EUR |
740+ | 0.10 EUR |
820+ | 0.09 EUR |
865+ | 0.08 EUR |
YBS2206 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 2.2A; Ifsm: 90A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 0.6kV
Load current: 2.2A
Max. forward impulse current: 90A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 2.2A; Ifsm: 90A; YBS; SMT
Electrical mounting: SMT
Max. off-state voltage: 0.6kV
Load current: 2.2A
Max. forward impulse current: 90A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: YBS
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
620+ | 0.12 EUR |
705+ | 0.10 EUR |
785+ | 0.09 EUR |
795+ | 0.09 EUR |
820+ | 0.09 EUR |
YBS2208 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 2.2A; Ifsm: 90A; YBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 2.2A; Ifsm: 90A; YBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
380+ | 0.19 EUR |
645+ | 0.11 EUR |
725+ | 0.10 EUR |
785+ | 0.09 EUR |
820+ | 0.09 EUR |
YBS2210 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 2.2A; Ifsm: 90A; YBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 2.2A; Ifsm: 90A; YBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2.2A
Max. forward impulse current: 90A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
620+ | 0.12 EUR |
705+ | 0.10 EUR |
760+ | 0.09 EUR |
785+ | 0.09 EUR |
810+ | 0.09 EUR |
YBS3008 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 3A; Ifsm: 110A; YBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 3A
Max. forward impulse current: 110A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 3A; Ifsm: 110A; YBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 3A
Max. forward impulse current: 110A
Case: YBS
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
605+ | 0.12 EUR |
685+ | 0.10 EUR |
750+ | 0.10 EUR |
770+ | 0.09 EUR |
795+ | 0.09 EUR |
YBSM40005 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
225+ | 0.32 EUR |
374+ | 0.19 EUR |
424+ | 0.17 EUR |
451+ | 0.16 EUR |
477+ | 0.15 EUR |
YBSM4001 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1306 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
225+ | 0.32 EUR |
374+ | 0.19 EUR |
424+ | 0.17 EUR |
451+ | 0.16 EUR |
477+ | 0.15 EUR |
YBSM4004 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
194+ | 0.37 EUR |
YBSM4006 |
Hersteller: Yangjie Technology
Description: YBSM 600V 4.0A Diodes Bridge R
Description: YBSM 600V 4.0A Diodes Bridge R
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1800+ | 0.33 EUR |
9000+ | 0.31 EUR |
18000+ | 0.29 EUR |
36000+ | 0.27 EUR |
72000+ | 0.25 EUR |
180000+ | 0.23 EUR |
YBSM4006 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
280+ | 0.26 EUR |
330+ | 0.22 EUR |
349+ | 0.21 EUR |
500+ | 0.20 EUR |
YBSM4008 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2528 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
195+ | 0.37 EUR |
329+ | 0.22 EUR |
424+ | 0.17 EUR |
447+ | 0.16 EUR |
YBSM4010 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YBSM6006 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1784 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
198+ | 0.36 EUR |
266+ | 0.27 EUR |
329+ | 0.22 EUR |
350+ | 0.20 EUR |
YBSM6006 |
Hersteller: Yangjie Technology
Description: YBSM 600V 6.0A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
Description: YBSM 600V 6.0A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1800+ | 0.43 EUR |
9000+ | 0.40 EUR |
18000+ | 0.38 EUR |
36000+ | 0.36 EUR |
72000+ | 0.32 EUR |
180000+ | 0.30 EUR |
YBSM6010 |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 6A; Ifsm: 150A; YBS3; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 150A
Case: YBS3
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
145+ | 0.49 EUR |
241+ | 0.30 EUR |
323+ | 0.22 EUR |
343+ | 0.21 EUR |
YBSM6010 |
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Hersteller: Yangjie Technology
Description: YBS3 1000V 6.0A Diodes Bridge
Packaging: Tape & Reel (TR)
Part Status: Active
Description: YBS3 1000V 6.0A Diodes Bridge
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1800+ | 0.40 EUR |
9000+ | 0.38 EUR |
18000+ | 0.36 EUR |
36000+ | 0.33 EUR |
72000+ | 0.30 EUR |
180000+ | 0.28 EUR |
YJ10N60CZ |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ2N60CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ2N60CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ2N65CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ2N65CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ2N65CZ |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ4N60CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ4N65CP |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ4N65CZ |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ7N60CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ7N65CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJ7N80CI |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 49W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 49W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJA3134KA |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 1000000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.04 EUR |
50000+ | 0.04 EUR |
100000+ | 0.04 EUR |
200000+ | 0.04 EUR |
400000+ | 0.03 EUR |
1000000+ | 0.03 EUR |
YJB150N06BQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.17 EUR |
4000+ | 1.10 EUR |
8000+ | 1.04 EUR |
16000+ | 0.97 EUR |
32000+ | 0.88 EUR |
80000+ | 0.81 EUR |
YJD112010DG1 |
Hersteller: Yangjie Technology
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 1200V 16A Diodes Rectif
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 9.35 EUR |
12500+ | 8.83 EUR |
25000+ | 8.31 EUR |
50000+ | 7.79 EUR |
100000+ | 7.01 EUR |
250000+ | 6.49 EUR |
YJD120N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 120A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.60 EUR |
12500+ | 0.56 EUR |
25000+ | 0.53 EUR |
50000+ | 0.50 EUR |
100000+ | 0.45 EUR |
250000+ | 0.42 EUR |
YJD15N10A |
Hersteller: Yangjie Technology
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.33 EUR |
12500+ | 0.32 EUR |
25000+ | 0.30 EUR |
50000+ | 0.28 EUR |
100000+ | 0.25 EUR |
250000+ | 0.23 EUR |
YJD15N10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
350+ | 0.21 EUR |
405+ | 0.18 EUR |
430+ | 0.17 EUR |
YJD180N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.60 EUR |
12500+ | 0.56 EUR |
25000+ | 0.53 EUR |
50000+ | 0.50 EUR |
100000+ | 0.45 EUR |
250000+ | 0.42 EUR |
YJD20N06A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3090 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
270+ | 0.27 EUR |
320+ | 0.22 EUR |
405+ | 0.18 EUR |
430+ | 0.17 EUR |
2500+ | 0.16 EUR |
YJD20N06A |
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Hersteller: Yangjie Technology
Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.33 EUR |
12500+ | 0.31 EUR |
25000+ | 0.29 EUR |
50000+ | 0.27 EUR |
100000+ | 0.25 EUR |
250000+ | 0.23 EUR |
YJD40N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 40A Transistors FE
Description: TO-252 N 40V 40A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.25 EUR |
12500+ | 0.23 EUR |
25000+ | 0.22 EUR |
50000+ | 0.21 EUR |
100000+ | 0.19 EUR |
250000+ | 0.17 EUR |
YJD50N03A |
Hersteller: Yangjie Technology
Description: TO-252 N 30V 50A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 30V 50A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.32 EUR |
12500+ | 0.31 EUR |
25000+ | 0.29 EUR |
50000+ | 0.27 EUR |
100000+ | 0.24 EUR |
250000+ | 0.23 EUR |
YJD50N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.43 EUR |
12500+ | 0.41 EUR |
25000+ | 0.39 EUR |
50000+ | 0.36 EUR |
100000+ | 0.33 EUR |
250000+ | 0.30 EUR |
YJD50N06A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
YJD60N02A |
Hersteller: Yangjie Technology
Description: TO-252 N 20V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 20V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.29 EUR |
12500+ | 0.28 EUR |
25000+ | 0.26 EUR |
50000+ | 0.24 EUR |
100000+ | 0.22 EUR |
250000+ | 0.20 EUR |
YJD60N04A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 12250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
320+ | 0.23 EUR |
355+ | 0.20 EUR |
435+ | 0.16 EUR |
YJD60N04A |
Hersteller: Yangjie Technology
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.33 EUR |
12500+ | 0.31 EUR |
25000+ | 0.29 EUR |
50000+ | 0.27 EUR |
100000+ | 0.25 EUR |
250000+ | 0.23 EUR |