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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
auf Bestellung 1572 Stücke:
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95+0.76 EUR
120+0.6 EUR
138+0.52 EUR
230+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 95
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FZT855TA FZT855TA DIODES INCORPORATED FZT855.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 90MHz
auf Bestellung 482 Stücke:
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48+1.52 EUR
74+0.98 EUR
96+0.75 EUR
108+0.66 EUR
200+0.63 EUR
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SMBJ14A-13-F SMBJ14A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1861 Stücke:
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228+0.31 EUR
269+0.27 EUR
315+0.23 EUR
417+0.17 EUR
658+0.11 EUR
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SMBJ14AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMJT9435-13 DIODES INCORPORATED DMJT9435.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 30V
Collector current: 3A
Quantity in set/package: 2500pcs.
Pulsed collector current: 6A
Frequency: 160MHz
Produkt ist nicht verfügbar
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SMCJ12A-13-F SMCJ12A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ12A-13-F SMBJ12A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3377 Stücke:
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278+0.26 EUR
334+0.21 EUR
397+0.18 EUR
705+0.1 EUR
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SMCJ28A-13-F SMCJ28A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 5898 Stücke:
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107+0.67 EUR
125+0.57 EUR
140+0.51 EUR
213+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.23 EUR
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3.0SMCJ28A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTA123JCA-7-F DDTA123JCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 669 Stücke:
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358+0.2 EUR
532+0.13 EUR
669+0.11 EUR
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DDA123JU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DDA123JH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT563
Collector current: 0.1A
Power dissipation: 0.15W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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SMAJ54A-13-F SMAJ54A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2879 Stücke:
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264+0.27 EUR
382+0.19 EUR
779+0.092 EUR
1003+0.071 EUR
Mindestbestellmenge: 264
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SMAJ51A-13-F SMAJ51A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 706 Stücke:
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250+0.29 EUR
302+0.24 EUR
360+0.2 EUR
706+0.1 EUR
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SMAJ51CA-13-F SMAJ51CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
278+0.26 EUR
321+0.22 EUR
463+0.15 EUR
530+0.13 EUR
Mindestbestellmenge: 228
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SMAJ54CA-13-F SMAJ54CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AZ23C5V6-7-F AZ23C5V6-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
736+0.097 EUR
794+0.09 EUR
927+0.077 EUR
Mindestbestellmenge: 625
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BZT52C5V6S-7-F BZT52C5V6S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 5265 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
834+0.086 EUR
1413+0.051 EUR
1993+0.036 EUR
3000+0.027 EUR
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BZT52C5V6-13-F BZT52C5V6-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 4623 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
758+0.094 EUR
893+0.08 EUR
1137+0.063 EUR
2193+0.033 EUR
3049+0.023 EUR
Mindestbestellmenge: 625
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BZT52C5V6Q-7-F BZT52C5V6Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 5936 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
676+0.11 EUR
794+0.09 EUR
1417+0.05 EUR
2110+0.034 EUR
2305+0.031 EUR
3000+0.03 EUR
Mindestbestellmenge: 556
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BZT52C5V6T-7 BZT52C5V6T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 1233 Stücke:
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500+0.14 EUR
1233+0.059 EUR
Mindestbestellmenge: 500
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED ZXMHC10A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2053 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
70+1.03 EUR
83+0.87 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 59
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DMHC4035LSDQ-13 DMHC4035LSDQ-13 DIODES INCORPORATED DMHC4035LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ZXMHC6A07N8TC ZXMHC6A07N8TC DIODES INCORPORATED ZXMHC6A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3A01N8TC DIODES INCORPORATED ZXMHC3A01N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.1A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 125/210mΩ
Mounting: SMD
Gate charge: 3.9/5.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZXMHC3F381N8TC ZXMHC3F381N8TC DIODES INCORPORATED ZXMHC3F381N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Produkt ist nicht verfügbar
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DSS3540M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Collector current: 0.5A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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DSS3515M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 3000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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DSS3515M-7B DIODES INCORPORATED DSS3515M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 10000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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DSS3540M-7B DIODES INCORPORATED DSS3540M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 10000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AH49EZ3-G1 DIODES INCORPORATED AH49E.pdf Category: Hall Sensors
Description: Sensor: Hall; TO92S; THT; Temp: -40÷85°C
Type of sensor: Hall
Case: TO92S
Mounting: THT
Operating temperature: -40...85°C
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.32 EUR
Mindestbestellmenge: 1000
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AH1751-PG-B-A DIODES INCORPORATED AH1751.pdf Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...125°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.39 EUR
Mindestbestellmenge: 1000
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AH175-WG-7-A DIODES INCORPORATED AH175.pdf Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; SMT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.41 EUR
Mindestbestellmenge: 3000
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AH175-PG-A-A DIODES INCORPORATED AH175.pdf Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.37 EUR
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AH175-PG-A-B DIODES INCORPORATED AH175.pdf Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.45 EUR
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AH175-PG-B-B DIODES INCORPORATED AH175.pdf Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 710 Stücke:
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710+0.42 EUR
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ZTX853 ZTX853 DIODES INCORPORATED ZTX853.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Quantity in set/package: 4000pcs.
auf Bestellung 3560 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
73+0.98 EUR
86+0.84 EUR
107+0.67 EUR
500+0.56 EUR
Mindestbestellmenge: 45
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ZTX853STZ DIODES INCORPORATED ZTX853.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Produkt ist nicht verfügbar
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74LVC374AT20-13 DIODES INCORPORATED 74LVC374A.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Supply voltage: 1.65...3.6V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMC2020USD-13 DMC2020USD-13 DIODES INCORPORATED DMC2020USD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.3/-7.8A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 0.02/0.033Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DMC3016LSD-13 DMC3016LSD-13 DIODES INCORPORATED DMC3016LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.016Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 139 Stücke:
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84+0.86 EUR
139+0.51 EUR
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DMC3026LSD-13 DIODES INCORPORATED DMC3026LSD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 6.5A; 1.2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 1.2W
Case: SO8
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DGD2106MS8-13 DGD2106MS8-13 DIODES INCORPORATED DGD2106M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 220ns
Pulse fall time: 80ns
Kind of package: reel; tape
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Supply voltage: 10...20V DC
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED DMC3028LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
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DMC3028LSDX-13 DMC3028LSDX-13 DIODES INCORPORATED DMC3028LSDX-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.027/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMC6040SSD-13 DMC6040SSD-13 DIODES INCORPORATED DMC6040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.04/0.11Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
113+0.64 EUR
145+0.49 EUR
162+0.44 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 79
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DMC6040SSDQ-13 DMC6040SSDQ-13 DIODES INCORPORATED DMC6040SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.6/-3.6A
Power dissipation: 1.24W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.13Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DIODES INCORPORATED DMC1018UPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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DMC1018UPD-13 DIODES INCORPORATED DMC1018UPD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMC1016UPD-13 DIODES INCORPORATED DMC1016UPD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMC3016LDV-13 DIODES INCORPORATED DMC3016LDV.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMC3016LDV-7 DIODES INCORPORATED DMC3016LDV.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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LM2904AQTH-13 DIODES INCORPORATED LM2902Q-04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 150nA
Input bias current: 0.5µA
Produkt ist nicht verfügbar
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LM2904ATH-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 150nA
Input bias current: 0.5µA
Produkt ist nicht verfügbar
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LM2904QTH-13 DIODES INCORPORATED Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 150nA
Input bias current: 0.5µA
Produkt ist nicht verfügbar
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LM2904AS-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2904AQM8-13 LM2904AQM8-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Integrated circuit features: low power
Produkt ist nicht verfügbar
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LM2904QM8-13 DIODES INCORPORATED LM2902Q-04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; MSOP8; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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BZT52C12Q-7-F BZT52C12Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
770+0.093 EUR
926+0.077 EUR
1603+0.045 EUR
1645+0.043 EUR
Mindestbestellmenge: 625
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BZT52C12SQ-7-F BZT52C12SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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DF08S-T DF005_10S.pdf
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
auf Bestellung 1572 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
120+0.6 EUR
138+0.52 EUR
230+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 95
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FZT855TA FZT855.pdf
FZT855TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 90MHz
auf Bestellung 482 Stücke:
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Anzahl Preis
48+1.52 EUR
74+0.98 EUR
96+0.75 EUR
108+0.66 EUR
200+0.63 EUR
Mindestbestellmenge: 48
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SMBJ14A-13-F SMBJ_ser.pdf
SMBJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
269+0.27 EUR
315+0.23 EUR
417+0.17 EUR
658+0.11 EUR
Mindestbestellmenge: 228
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SMBJ14AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DMJT9435-13 DMJT9435.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 30V
Collector current: 3A
Quantity in set/package: 2500pcs.
Pulsed collector current: 6A
Frequency: 160MHz
Produkt ist nicht verfügbar
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SMCJ12A-13-F SMCJ_ser.pdf
SMCJ12A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ12A-13-F SMBJ_ser.pdf
SMBJ12A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
397+0.18 EUR
705+0.1 EUR
Mindestbestellmenge: 278
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SMCJ28A-13-F SMCJ_ser.pdf
SMCJ28A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 5898 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
125+0.57 EUR
140+0.51 EUR
213+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.23 EUR
Mindestbestellmenge: 107
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3.0SMCJ28A-13 3.0SMCJxx.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
532+0.13 EUR
669+0.11 EUR
Mindestbestellmenge: 358
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DDA123JU-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DDA123JH-7 ds30420.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT563
Collector current: 0.1A
Power dissipation: 0.15W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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SMAJ54A-13-F SMAJ_ser.pdf
SMAJ54A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
382+0.19 EUR
779+0.092 EUR
1003+0.071 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ51A-13-F SMAJ_ser.pdf
SMAJ51A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
360+0.2 EUR
706+0.1 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ51CA-13-F SMAJ_ser.pdf
SMAJ51CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
278+0.26 EUR
321+0.22 EUR
463+0.15 EUR
530+0.13 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ54CA-13-F SMAJ_ser.pdf
SMAJ54CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AZ23C5V6-7-F AZ23C_ser.pdf
AZ23C5V6-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
736+0.097 EUR
794+0.09 EUR
927+0.077 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C5V6S-7-F BZT52CxxS_ser.pdf
BZT52C5V6S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 5265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
834+0.086 EUR
1413+0.051 EUR
1993+0.036 EUR
3000+0.027 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C5V6-13-F BZT52Cxx_ser.pdf
BZT52C5V6-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 4623 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
893+0.08 EUR
1137+0.063 EUR
2193+0.033 EUR
3049+0.023 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C5V6Q-7-F BZT52Cxx_ser.pdf
BZT52C5V6Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 5936 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
676+0.11 EUR
794+0.09 EUR
1417+0.05 EUR
2110+0.034 EUR
2305+0.031 EUR
3000+0.03 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C5V6T-7 BZT52CxxT_ser.pdf
BZT52C5V6T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 1233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
1233+0.059 EUR
Mindestbestellmenge: 500
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ZXMHC10A07N8TC ZXMHC10A07N8.pdf
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2053 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
70+1.03 EUR
83+0.87 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DMHC4035LSDQ-13 DMHC4035LSDQ.pdf
DMHC4035LSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ZXMHC6A07N8TC ZXMHC6A07N8.pdf
ZXMHC6A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMHC3A01N8TC ZXMHC3A01N8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.1A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 125/210mΩ
Mounting: SMD
Gate charge: 3.9/5.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZXMHC3F381N8TC ZXMHC3F381N8.pdf
ZXMHC3F381N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Produkt ist nicht verfügbar
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DSS3540M-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Collector current: 0.5A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSS3515M-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 3000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSS3515M-7B DSS3515M.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 10000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSS3540M-7B DSS3540M.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 10000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH49EZ3-G1 AH49E.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; TO92S; THT; Temp: -40÷85°C
Type of sensor: Hall
Case: TO92S
Mounting: THT
Operating temperature: -40...85°C
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.32 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AH1751-PG-B-A AH1751.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...125°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.39 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AH175-WG-7-A AH175.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; SMT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AH175-PG-A-A AH175.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.37 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
AH175-PG-A-B AH175.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.45 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
AH175-PG-B-B AH175.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
710+0.42 EUR
Mindestbestellmenge: 710
Im Einkaufswagen  Stück im Wert von  UAH
ZTX853 ZTX853.pdf
ZTX853
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Quantity in set/package: 4000pcs.
auf Bestellung 3560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
73+0.98 EUR
86+0.84 EUR
107+0.67 EUR
500+0.56 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
ZTX853STZ ZTX853.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Produkt ist nicht verfügbar
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74LVC374AT20-13 74LVC374A.pdf
Hersteller: DIODES INCORPORATED
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Supply voltage: 1.65...3.6V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMC2020USD-13 DMC2020USD-13.pdf
DMC2020USD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.3/-7.8A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 0.02/0.033Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DMC3016LSD-13 DMC3016LSD-13.pdf
DMC3016LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.016Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
139+0.51 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
DMC3026LSD-13 DMC3026LSD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 6.5A; 1.2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 1.2W
Case: SO8
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DGD2106MS8-13 DGD2106M.pdf
DGD2106MS8-13
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 220ns
Pulse fall time: 80ns
Kind of package: reel; tape
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Supply voltage: 10...20V DC
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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DMC3028LSD-13 DMC3028LSD-13.pdf
DMC3028LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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DMC3028LSDX-13 DMC3028LSDX-13.pdf
DMC3028LSDX-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.027/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMC6040SSD-13 DMC6040SSD-13.pdf
DMC6040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.04/0.11Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
113+0.64 EUR
145+0.49 EUR
162+0.44 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 79
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DMC6040SSDQ-13 DMC6040SSDQ.pdf
DMC6040SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.6/-3.6A
Power dissipation: 1.24W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.13Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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DMC1018UPD-13 DMC1018UPD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMC1016UPD-13 DMC1016UPD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMC3016LDV-13 DMC3016LDV.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMC3016LDV-7 DMC3016LDV.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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LM2904AQTH-13 LM2902Q-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 150nA
Input bias current: 0.5µA
Produkt ist nicht verfügbar
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LM2904ATH-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 150nA
Input bias current: 0.5µA
Produkt ist nicht verfügbar
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LM2904QTH-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 150nA
Input bias current: 0.5µA
Produkt ist nicht verfügbar
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LM2904AS-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2904AQM8-13 LM2902Q_04Q.pdf
LM2904AQM8-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Integrated circuit features: low power
Produkt ist nicht verfügbar
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LM2904QM8-13 LM2902Q-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; MSOP8; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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BZT52C12Q-7-F BZT52Cxx_ser.pdf
BZT52C12Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
770+0.093 EUR
926+0.077 EUR
1603+0.045 EUR
1645+0.043 EUR
Mindestbestellmenge: 625
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BZT52C12SQ-7-F Ds30093-R20.pdf
BZT52C12SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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