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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
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SMBJ14A-13-F SMBJ14A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ14AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMJT9435-13 DIODES INCORPORATED DMJT9435.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 30V
Power dissipation: 1.2W
Collector current: 3A
Quantity in set/package: 2500pcs.
Pulsed collector current: 6A
Frequency: 160MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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SMCJ12A-13-F SMCJ12A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ12A-13-F SMBJ12A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ28A-13-F SMCJ28A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ28A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTA123JCA-7-F DDTA123JCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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DDA123JU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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DDA123JH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
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SMAJ54A-13-F SMAJ54A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ51A-13-F SMAJ51A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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285+0.3 EUR
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SMAJ51CA-13-F SMAJ51CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AZ23C5V6-7-F AZ23C5V6-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Tolerance: ±5%
Semiconductor structure: common anode; double
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BZT52C5V6S-7-F BZT52C5V6S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED ZXMHC10A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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DMHC4035LSDQ-13 DMHC4035LSDQ-13 DIODES INCORPORATED DMHC4035LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMHC6A07N8TC ZXMHC6A07N8TC DIODES INCORPORATED ZXMHC6A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3F381N8TC ZXMHC3F381N8TC DIODES INCORPORATED ZXMHC3F381N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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DSS3540M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
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DSS3515M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3515M-7B DIODES INCORPORATED DSS3515M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3540M-7B DIODES INCORPORATED DSS3540M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
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AH49EZ3-G1 DIODES INCORPORATED AH49E.pdf Category: Hall Sensors
Description: Sensor: Hall; TO92S; THT; Temp: -40÷85°C
Type of sensor: Hall
Case: TO92S
Operating temperature: -40...85°C
Mounting: THT
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DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED DMC3028LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 2.1W
Polarisation: unipolar
Drain current: 7.4/-7.1A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
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DMC6040SSD-13 DMC6040SSD-13 DIODES INCORPORATED DMC6040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
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79+1.09 EUR
113+0.76 EUR
145+0.58 EUR
162+0.52 EUR
500+0.39 EUR
1000+0.37 EUR
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DMC1018UPDWQ-13 DIODES INCORPORATED DMC1018UPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
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DMC1018UPD-13 DIODES INCORPORATED DMC1018UPD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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BZT52C12Q-7-F BZT52C12Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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758+0.11 EUR
918+0.093 EUR
1593+0.054 EUR
1634+0.052 EUR
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BZT52C12SQ-7-F BZT52C12SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C12TQ-7-F BZT52C12TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZT52C12Q-13-F BZT52C12Q-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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MMBTA06Q-7-F MMBTA06Q-7-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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ZVP3310FTA ZVP3310FTA DIODES INCORPORATED ZVP3310F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140mA
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.9 EUR
131+0.65 EUR
161+0.54 EUR
220+0.39 EUR
240+0.36 EUR
500+0.29 EUR
1000+0.26 EUR
3000+0.24 EUR
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74AHC1G125W5-7 74AHC1G125W5-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
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415+0.2 EUR
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74LVC1G125W5-7 74LVC1G125W5-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2128 Stücke:
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500+0.17 EUR
658+0.13 EUR
758+0.11 EUR
893+0.095 EUR
1099+0.077 EUR
1112+0.076 EUR
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74AHC1G125SE-7 74AHC1G125SE-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
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74AHCT1G125SE-7 74AHCT1G125SE-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
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Lieferzeit 14-21 Tag (e)
500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1244+0.068 EUR
1316+0.064 EUR
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74AHCT1G125W5-7 74AHCT1G125W5-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
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Lieferzeit 14-21 Tag (e)
455+0.19 EUR
582+0.14 EUR
658+0.13 EUR
787+0.11 EUR
940+0.09 EUR
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74LVC1G125SE-7 74LVC1G125SE-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 1550 Stücke:
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715+0.12 EUR
962+0.088 EUR
1087+0.079 EUR
1316+0.064 EUR
1550+0.055 EUR
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74LVC1G125Z-7 74LVC1G125Z-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
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74LVC1G125FW4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74LVC1G125FZ4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74AUP1G125FS3-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G125FW5-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G125FX4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
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 Mindestbestellmenge: 5 Stücke
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74AUP1G125FZ4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Family: AUP
Number of inputs: 2
Produkt ist nicht verfügbar
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3849 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
305+0.27 EUR
374+0.23 EUR
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SMAJ28A-13-F SMAJ28A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.25 EUR
491+0.18 EUR
569+0.15 EUR
642+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
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SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ28AQ-13-F SMAJ28AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED DMTH6004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Power dissipation: 3.9W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Kind of package: 13 inch reel; tape
Application: automotive industry
Polarisation: unipolar
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.55 EUR
51+1.69 EUR
60+1.43 EUR
100+1.19 EUR
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DMTH4004SCTB-13 DIODES INCORPORATED DMTH4004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Mounting: SMD
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO263AB
On-state resistance: 3mΩ
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
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DMTH4004SCTBQ-13 DIODES INCORPORATED DMTH4004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Mounting: SMD
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO263AB
On-state resistance: 3mΩ
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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DF08S-T DF005_10S.pdf
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
71+1.19 EUR
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SMBJ14A-13-F SMBJ_ser.pdf
SMBJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
241+0.36 EUR
272+0.31 EUR
361+0.24 EUR
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SMBJ14AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DMJT9435-13 DMJT9435.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 30V
Power dissipation: 1.2W
Collector current: 3A
Quantity in set/package: 2500pcs.
Pulsed collector current: 6A
Frequency: 160MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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SMCJ12A-13-F SMCJ_ser.pdf
SMCJ12A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ12A-13-F SMBJ_ser.pdf
SMBJ12A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3177 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
309+0.27 EUR
348+0.25 EUR
527+0.17 EUR
650+0.13 EUR
3000+0.12 EUR
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SMCJ28A-13-F SMCJ_ser.pdf
SMCJ28A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 5898 Stücke:
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91+0.94 EUR
110+0.77 EUR
125+0.69 EUR
210+0.4 EUR
500+0.3 EUR
1000+0.26 EUR
3000+0.25 EUR
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3.0SMCJ28A-13 3.0SMCJxx.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 669 Stücke:
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358+0.24 EUR
491+0.18 EUR
669+0.13 EUR
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DDA123JU-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DDA123JH-7 ds30420.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ54A-13-F SMAJ_ser.pdf
SMAJ54A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2873 Stücke:
Lieferzeit 14-21 Tag (e)
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264+0.32 EUR
382+0.23 EUR
779+0.11 EUR
1000+0.086 EUR
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SMAJ51A-13-F SMAJ_ser.pdf
SMAJ51A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
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239+0.36 EUR
285+0.3 EUR
321+0.26 EUR
468+0.19 EUR
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SMAJ51CA-13-F SMAJ_ser.pdf
SMAJ51CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
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65+1.31 EUR
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AZ23C5V6-7-F AZ23C_ser.pdf
AZ23C5V6-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Tolerance: ±5%
Semiconductor structure: common anode; double
auf Bestellung 701 Stücke:
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625+0.13 EUR
701+0.12 EUR
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BZT52C5V6S-7-F BZT52CxxS_ser.pdf
BZT52C5V6S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZXMHC10A07N8TC ZXMHC10A07N8.pdf
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2047 Stücke:
Lieferzeit 14-21 Tag (e)
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59+1.46 EUR
70+1.23 EUR
83+1.04 EUR
100+0.95 EUR
500+0.9 EUR
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DMHC4035LSDQ-13 DMHC4035LSDQ.pdf
DMHC4035LSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ZXMHC6A07N8TC ZXMHC6A07N8.pdf
ZXMHC6A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Produkt ist nicht verfügbar
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ZXMHC3F381N8TC ZXMHC3F381N8.pdf
ZXMHC3F381N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Produkt ist nicht verfügbar
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DSS3540M-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
Produkt ist nicht verfügbar
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DSS3515M-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
Produkt ist nicht verfügbar
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DSS3515M-7B DSS3515M.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
Produkt ist nicht verfügbar
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DSS3540M-7B DSS3540M.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Produkt ist nicht verfügbar
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AH49EZ3-G1 AH49E.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; TO92S; THT; Temp: -40÷85°C
Type of sensor: Hall
Case: TO92S
Operating temperature: -40...85°C
Mounting: THT
auf Bestellung 59000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.38 EUR
Mindestbestellmenge: 1000 Stücke
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DMC3028LSD-13 DMC3028LSD-13.pdf
DMC3028LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 2.1W
Polarisation: unipolar
Drain current: 7.4/-7.1A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Produkt ist nicht verfügbar
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DMC6040SSD-13 DMC6040SSD-13.pdf
DMC6040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1324 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
79+1.09 EUR
113+0.76 EUR
145+0.58 EUR
162+0.52 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 79 Stücke
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMC1018UPD-13 DMC1018UPD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BZT52C12Q-7-F BZT52Cxx_ser.pdf
BZT52C12Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
758+0.11 EUR
918+0.093 EUR
1593+0.054 EUR
1634+0.052 EUR
Mindestbestellmenge: 625 Stücke
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BZT52C12SQ-7-F Ds30093-R20.pdf
BZT52C12SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C12T-7 BZT52CxxT_ser.pdf
BZT52C12T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C12TQ-7-F ds30502.pdf
BZT52C12TQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C12Q-13-F ds18004.pdf
BZT52C12Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MMBTA06Q-7-F MMBTA05_MMBTA06.pdf
MMBTA06Q-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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AP2112M-3.3TRG1 AP2112.pdf
AP2112M-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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AP2112R5-3.3TRG1 AP2112.pdf
AP2112R5-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP2112R5A-3.3TRG1 AP2112.pdf
AP2112R5A-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP2112R5-1.2TRG1 AP2112.pdf
AP2112R5-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ZVP3310FTA ZVP3310F.pdf
ZVP3310FTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140mA
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
95+0.9 EUR
131+0.65 EUR
161+0.54 EUR
220+0.39 EUR
240+0.36 EUR
500+0.29 EUR
1000+0.26 EUR
3000+0.24 EUR
Mindestbestellmenge: 95 Stücke
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74AHC1G125W5-7 74AHC1G125.pdf
74AHC1G125W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
415+0.2 EUR
Mindestbestellmenge: 415 Stücke
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74LVC1G125W5-7 74LVC1G125.pdf
74LVC1G125W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 2128 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
658+0.13 EUR
758+0.11 EUR
893+0.095 EUR
1099+0.077 EUR
1112+0.076 EUR
Mindestbestellmenge: 500 Stücke
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74AHC1G125SE-7 74AHC1G125.pdf
74AHC1G125SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
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74AHCT1G125SE-7 74AHCT1G125.pdf
74AHCT1G125SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 2558 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1244+0.068 EUR
1316+0.064 EUR
Mindestbestellmenge: 500 Stücke
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74AHCT1G125W5-7 74AHCT1G125.pdf
74AHCT1G125W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
582+0.14 EUR
658+0.13 EUR
787+0.11 EUR
940+0.09 EUR
Mindestbestellmenge: 455 Stücke
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74LVC1G125SE-7 74LVC1G125.pdf
74LVC1G125SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
715+0.12 EUR
962+0.088 EUR
1087+0.079 EUR
1316+0.064 EUR
1550+0.055 EUR
Mindestbestellmenge: 715 Stücke
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74LVC1G125Z-7 74LVC1G125.pdf
74LVC1G125Z-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125FW4-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125FZ4-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G125FS3-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G125FW5-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G125FX4-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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74AUP1G125FZ4-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Family: AUP
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ28CA-13-F SMAJ_ser.pdf
SMAJ28CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3849 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
305+0.27 EUR
374+0.23 EUR
Mindestbestellmenge: 250 Stücke
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SMAJ28A-13-F SMAJ_ser.pdf
SMAJ28A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
491+0.18 EUR
569+0.15 EUR
642+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 334 Stücke
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SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ28AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Power dissipation: 3.9W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Kind of package: 13 inch reel; tape
Application: automotive industry
Polarisation: unipolar
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.55 EUR
51+1.69 EUR
60+1.43 EUR
100+1.19 EUR
Mindestbestellmenge: 34 Stücke
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DMTH4004SCTB-13 DMTH4004SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Mounting: SMD
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO263AB
On-state resistance: 3mΩ
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Mounting: SMD
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO263AB
On-state resistance: 3mΩ
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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