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AP22913W6-7 AP22913W6-7 Diodes Incorporated AP22913.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT26
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 84mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-26
Fault Protection: Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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AP22913W6-EVM Diodes Incorporated AP22913W6-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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AP22913CN4-EVM AP22913CN4-EVM Diodes Incorporated AP22913CN4-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
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DF01S-T DF01S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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3000+0.27 EUR
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7500+0.25 EUR
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DF01S-T DF01S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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BZX84C36W-7 BZX84C36W-7 Diodes Incorporated ds30066.pdf Description: DIODE ZENER 36V 200MW SOT323
Part Status: Active
Packaging: Cut Tape (CT)
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104+0.2 EUR
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KBP2005G KBP2005G Diodes Incorporated ds21205.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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105+0.69 EUR
525+0.54 EUR
1015+0.48 EUR
2030+0.44 EUR
5005+0.39 EUR
10010+0.36 EUR
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PI3EQX16621ZLDEX PI3EQX16621ZLDEX Diodes Incorporated PI3EQX16621-Product-Brief.pdf Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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PI3EQX16621ZLDEX PI3EQX16621ZLDEX Diodes Incorporated PI3EQX16621-Product-Brief.pdf Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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250+7.85 EUR
500+7.06 EUR
1000+5.95 EUR
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PS508LEX PS508LEX Diodes Incorporated PS508-509.pdf Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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PS508LEX PS508LEX Diodes Incorporated PS508-509.pdf Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
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AP78L05WG-7 AP78L05WG-7 Diodes Incorporated Description: IC REG LINEAR 5V 100MA SOT23
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PI7C9X1170ACLE PI7C9X1170ACLE Diodes Incorporated PI7C9X1170.pdf Description: IC I2C/SPI TO UART 24TSSOP 62PC
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PI7C9X1170ACLEX PI7C9X1170ACLEX Diodes Incorporated PI7C9X1170.pdf Description: IC I2C/SPI TO UART 24TSSOP 3K
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PI7C9X1170BCLEX PI7C9X1170BCLEX Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 16TSSOP 2.5K
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PI7C9X1170CZDEX PI7C9X1170CZDEX Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDGE 24TQFN 3.5K
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PI7C9X1170BCLE PI7C9X1170BCLE Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 16TSSOP 96PC
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PI7C9X1170ABLE Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170ABLEX Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLE Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170BBLEX Diodes Incorporated Description: IC BRIDGE I2C/SPI TO UART
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PI7C9X1170CZDE PI7C9X1170CZDE Diodes Incorporated PI7C9X1170.pdf Description: IC SPI TO UART BRDG 24TQFN 490PC
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AL1678-08BS7-13 AL1678-08BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED DRIVER OFFL NO 800MA 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 15V ~ 35V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 350kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SO
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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SBRT25U50SLP-13 SBRT25U50SLP-13 Diodes Incorporated SBRT25U50SLP.pdf Description: DIODE SBR 50V 25A POWERDI5060-8
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI5060-8
Current - Average Rectified (Io): 25A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBRT20M80SP5-13 SBRT20M80SP5-13 Diodes Incorporated Description: DIODE SBR 80V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBRT20M60SP5-13 SBRT20M60SP5-13 Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
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SBRT20M60SP5-13 SBRT20M60SP5-13 Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
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10+2.09 EUR
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500+0.79 EUR
1000+0.73 EUR
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SBRT25M60SLP-13 SBRT25M60SLP-13 Diodes Incorporated SBRT25M60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI5060-8 (Type K)
Current - Average Rectified (Io): 25A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP7363-HA-7 AP7363-HA-7 Diodes Incorporated AP7363.pdf Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
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3000+0.35 EUR
6000+0.33 EUR
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AP7363-HA-7 AP7363-HA-7 Diodes Incorporated AP7363.pdf Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
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100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
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FL3200022 FL3200022 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200022 FL3200022 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 16PF SMD
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FL3200037 FL3200037 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Height - Seated (Max): 0.030" (0.75mm)
Operating Mode: Fundamental
Frequency Tolerance: ±15ppm
Frequency Stability: ±15ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 8pF
Package / Case: 4-SMD, No Lead
Frequency: 32 MHz
ESR (Equivalent Series Resistance): 50 Ohms
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FL3200037 FL3200037 Diodes Incorporated FL.pdf Description: CRYSTAL 32.0000MHZ 8PF SMD
Frequency: 32 MHz
ESR (Equivalent Series Resistance): 50 Ohms
Height - Seated (Max): 0.030" (0.75mm)
Operating Mode: Fundamental
Frequency Tolerance: ±15ppm
Frequency Stability: ±15ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 8pF
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
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16+1.32 EUR
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50+0.99 EUR
100+0.88 EUR
500+0.83 EUR
1000+0.7 EUR
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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMPH4015SK3Q-13 DMPH4015SK3Q-13 Diodes Incorporated DMPH4015SK3Q.pdf Description: MOSFET P-CH 40V 14A/45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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6+3.5 EUR
10+2.21 EUR
25+1.87 EUR
50+1.65 EUR
100+1.48 EUR
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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2500+1 EUR
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DMTH6005LK3Q-13 DMTH6005LK3Q-13 Diodes Incorporated DMTH6005LK3Q.pdf Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 141698 Stücke:
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7+3.2 EUR
10+2.26 EUR
100+1.54 EUR
500+1.21 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Qualification: AEC-Q101
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 Diodes Incorporated DMTH6004SK3Q.pdf Description: MOSFET N-CH 60V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMNH6042SK3Q-13 DMNH6042SK3Q-13 Diodes Incorporated DMNH6042SK3Q.pdf Description: MOSFET N-CH 60V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
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DMTH6010SK3Q-13 DMTH6010SK3Q-13 Diodes Incorporated DMTH6010SK3Q.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
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500+1.06 EUR
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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G53270004 G53270004 Diodes Incorporated G53270004_G.pdf Description: CRYSTAL 32.7680KHZ 12.5PF SMD
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PT8A3290WE PT8A3290WE Diodes Incorporated PT8A3290-3297.pdf Description: HEATER CONTROLLER SO-8
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PT8A3290WEX PT8A3290WEX Diodes Incorporated PT8A3290-3297.pdf Description: HEATER CONTROLLER SO-8
Supplier Device Package: 8-SOIC
Applications: Heating Controller
Voltage - Supply: 3.5V ~ 5.5V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06QW5-7 Diodes Incorporated 74LVC1G06Q.pdf Description: IC INVERTER 1CH 1-INP SOT25
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Input Logic Level - Low: 0.58V ~ 1.65V
Input Logic Level - High: 1.07V ~ 3.85V
Supplier Device Package: SOT-25
Number of Inputs: 1
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Features: Open Drain
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06QW5-7 Diodes Incorporated 74LVC1G06Q.pdf Description: IC INVERTER 1CH 1-INP SOT25
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Input Logic Level - Low: 0.58V ~ 1.65V
Input Logic Level - High: 1.07V ~ 3.85V
Supplier Device Package: SOT-25
Number of Inputs: 1
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Features: Open Drain
Packaging: Cut Tape (CT)
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84+0.25 EUR
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139+0.15 EUR
164+0.13 EUR
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74LVC1G00QW5-7 74LVC1G00QW5-7 Diodes Incorporated 74LVC1G00Q.pdf Description: IC NAND 1-CIR 2-IN SOT-25
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
Grade: Automotive
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: SOT-25
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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74LVC1G00QW5-7 74LVC1G00QW5-7 Diodes Incorporated 74LVC1G00Q.pdf Description: IC NAND 1-CIR 2-IN SOT-25
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: SOT-25
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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72+0.3 EUR
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124+0.17 EUR
135+0.15 EUR
146+0.14 EUR
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WT21120001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21200002 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21260003 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21320001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
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WT21390001 Diodes Incorporated Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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FL1300034 FL1300034 Diodes Incorporated Description: CRYSTAL 13.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 13 MHz
Produkt ist nicht verfügbar
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AP22913W6-7 AP22913.pdf
AP22913W6-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 SOT26
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 84mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-26
Fault Protection: Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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AP22913W6-EVM AP22913W6-EVM-User-Guide.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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AP22913CN4-EVM AP22913CN4-EVM-User-Guide.pdf
AP22913CN4-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP22913
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AP22913
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
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DF01S-T ds17001.pdf
DF01S-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1500+0.31 EUR
3000+0.27 EUR
4500+0.26 EUR
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DF01S-T ds17001.pdf
DF01S-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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18+1.21 EUR
29+0.75 EUR
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BZX84C36W-7 ds30066.pdf
BZX84C36W-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOT323
Part Status: Active
Packaging: Cut Tape (CT)
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48+0.44 EUR
75+0.29 EUR
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KBP2005G ds21205.pdf
KBP2005G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 12727 Stücke:
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35+0.84 EUR
105+0.69 EUR
525+0.54 EUR
1015+0.48 EUR
2030+0.44 EUR
5005+0.39 EUR
10010+0.36 EUR
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PI3EQX16621ZLDEX PI3EQX16621-Product-Brief.pdf
PI3EQX16621ZLDEX
Hersteller: Diodes Incorporated
Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
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3500+5.65 EUR
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PI3EQX16621ZLDEX PI3EQX16621-Product-Brief.pdf
PI3EQX16621ZLDEX
Hersteller: Diodes Incorporated
Description: PCIE EQX REDRIVER W-QFN3060-40
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: PCIe
Data Rate (Max): 16Gbps
Supplier Device Package: 40-TQFN (3x6)
Signal Conditioning: Input Equalization
auf Bestellung 6998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.25 EUR
10+10.12 EUR
25+9.56 EUR
100+8.28 EUR
250+7.85 EUR
500+7.06 EUR
1000+5.95 EUR
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PS508LEX PS508-509.pdf
PS508LEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
Produkt ist nicht verfügbar
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PS508LEX PS508-509.pdf
PS508LEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 17V,TSSOP-16,T&R,2
Produkt ist nicht verfügbar
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AP78L05WG-7
AP78L05WG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 100MA SOT23
Produkt ist nicht verfügbar
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PI7C9X1170ACLE PI7C9X1170.pdf
PI7C9X1170ACLE
Hersteller: Diodes Incorporated
Description: IC I2C/SPI TO UART 24TSSOP 62PC
Produkt ist nicht verfügbar
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PI7C9X1170ACLEX PI7C9X1170.pdf
PI7C9X1170ACLEX
Hersteller: Diodes Incorporated
Description: IC I2C/SPI TO UART 24TSSOP 3K
Produkt ist nicht verfügbar
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PI7C9X1170BCLEX PI7C9X1170.pdf
PI7C9X1170BCLEX
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 16TSSOP 2.5K
Produkt ist nicht verfügbar
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PI7C9X1170CZDEX PI7C9X1170.pdf
PI7C9X1170CZDEX
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDGE 24TQFN 3.5K
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+5.22 EUR
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PI7C9X1170BCLE PI7C9X1170.pdf
PI7C9X1170BCLE
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 16TSSOP 96PC
Produkt ist nicht verfügbar
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PI7C9X1170ABLE
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170ABLEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170BBLE
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170BBLEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE I2C/SPI TO UART
Produkt ist nicht verfügbar
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PI7C9X1170CZDE PI7C9X1170.pdf
PI7C9X1170CZDE
Hersteller: Diodes Incorporated
Description: IC SPI TO UART BRDG 24TQFN 490PC
Produkt ist nicht verfügbar
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AL1678-08BS7-13 AL1678-20B_10B_08B.pdf
AL1678-08BS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL NO 800MA 7SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 15V ~ 35V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 350kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SO
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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SBRT25U50SLP-13 SBRT25U50SLP.pdf
SBRT25U50SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 25A POWERDI5060-8
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI5060-8
Current - Average Rectified (Io): 25A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBRT20M80SP5-13
SBRT20M80SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 80V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBRT20M60SP5-13 SBRT20M60SP5.pdf
SBRT20M60SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.63 EUR
Mindestbestellmenge: 5000 Stücke
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SBRT20M60SP5-13 SBRT20M60SP5.pdf
SBRT20M60SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 70064 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
15+1.42 EUR
100+0.98 EUR
500+0.79 EUR
1000+0.73 EUR
2000+0.67 EUR
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SBRT25M60SLP-13 SBRT25M60SLP.pdf
SBRT25M60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI5060-8 (Type K)
Current - Average Rectified (Io): 25A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP7363-HA-7 AP7363.pdf
AP7363-HA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.33 EUR
Mindestbestellmenge: 3000 Stücke
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AP7363-HA-7 AP7363.pdf
AP7363-HA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: U-DFN2030-8
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 9652 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
38+0.56 EUR
43+0.5 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
Mindestbestellmenge: 26 Stücke
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FL3200022 FL.pdf
FL3200022
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FL3200022 FL.pdf
FL3200022
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
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FL3200037 FL.pdf
FL3200037
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Height - Seated (Max): 0.030" (0.75mm)
Operating Mode: Fundamental
Frequency Tolerance: ±15ppm
Frequency Stability: ±15ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 8pF
Package / Case: 4-SMD, No Lead
Frequency: 32 MHz
ESR (Equivalent Series Resistance): 50 Ohms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.65 EUR
6000+0.64 EUR
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FL3200037 FL.pdf
FL3200037
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Frequency: 32 MHz
ESR (Equivalent Series Resistance): 50 Ohms
Height - Seated (Max): 0.030" (0.75mm)
Operating Mode: Fundamental
Frequency Tolerance: ±15ppm
Frequency Stability: ±15ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 8pF
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 6815 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
20+1.09 EUR
50+0.99 EUR
100+0.88 EUR
500+0.83 EUR
1000+0.7 EUR
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
DMPH4015SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.5 EUR
10+2.21 EUR
25+1.87 EUR
50+1.65 EUR
100+1.48 EUR
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1 EUR
5000+0.94 EUR
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DMTH6005LK3Q-13 DMTH6005LK3Q.pdf
DMTH6005LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 141698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
10+2.26 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.11 EUR
Mindestbestellmenge: 7 Stücke
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Qualification: AEC-Q101
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.07 EUR
5000+1.05 EUR
Mindestbestellmenge: 2500 Stücke
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 235350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
10+2.17 EUR
100+1.52 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 8 Stücke
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 975000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.62 EUR
5000+0.6 EUR
7500+0.58 EUR
12500+0.57 EUR
Mindestbestellmenge: 2500 Stücke
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DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
DMNH6021SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 976626 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
100+0.92 EUR
500+0.79 EUR
1000+0.69 EUR
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
DMNH6042SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1851 Stücke:
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AnzahlPrivatkunde
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 275000 Stücke:
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2500+0.84 EUR
5000+0.79 EUR
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
DMTH6010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 277156 Stücke:
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AnzahlPrivatkunde
7+3.14 EUR
11+2 EUR
100+1.33 EUR
500+1.06 EUR
1000+0.96 EUR
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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G53270004 G53270004_G.pdf
G53270004
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.7680KHZ 12.5PF SMD
Produkt ist nicht verfügbar
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PT8A3290WE PT8A3290-3297.pdf
PT8A3290WE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Produkt ist nicht verfügbar
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PT8A3290WEX PT8A3290-3297.pdf
PT8A3290WEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Supplier Device Package: 8-SOIC
Applications: Heating Controller
Voltage - Supply: 3.5V ~ 5.5V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06Q.pdf
74LVC1G06QW5-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP SOT25
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Input Logic Level - Low: 0.58V ~ 1.65V
Input Logic Level - High: 1.07V ~ 3.85V
Supplier Device Package: SOT-25
Number of Inputs: 1
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Features: Open Drain
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC1G06QW5-7 74LVC1G06Q.pdf
74LVC1G06QW5-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP SOT25
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Input Logic Level - Low: 0.58V ~ 1.65V
Input Logic Level - High: 1.07V ~ 3.85V
Supplier Device Package: SOT-25
Number of Inputs: 1
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Features: Open Drain
Packaging: Cut Tape (CT)
auf Bestellung 2409 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
122+0.17 EUR
139+0.15 EUR
164+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
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74LVC1G00QW5-7 74LVC1G00Q.pdf
74LVC1G00QW5-7
Hersteller: Diodes Incorporated
Description: IC NAND 1-CIR 2-IN SOT-25
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
Grade: Automotive
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: SOT-25
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
9000+0.1 EUR
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74LVC1G00QW5-7 74LVC1G00Q.pdf
74LVC1G00QW5-7
Hersteller: Diodes Incorporated
Description: IC NAND 1-CIR 2-IN SOT-25
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: SOT-25
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 86574 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
108+0.19 EUR
124+0.17 EUR
135+0.15 EUR
146+0.14 EUR
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WT21120001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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WT21200002
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21260003
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21320001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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WT21390001
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
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FL1300034
FL1300034
Hersteller: Diodes Incorporated
Description: CRYSTAL 13.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 13 MHz
Produkt ist nicht verfügbar
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