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IRFR6215TRLPBF IRFR6215TRLPBF Infineon Technologies irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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IRFR540ZTRRPBF IRFR540ZTRRPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRFR18N15DTRRP IRFR18N15DTRRP Infineon Technologies irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069 Description: MOSFET N-CH 150V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPS1041RTRRPBF IPS1041RTRRPBF Infineon Technologies IPS1041%28L%2CR%29PbF%2CIPS1042GPbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR13N20DTRLP IRFR13N20DTRLP Infineon Technologies irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f Description: MOSFET N-CH 200V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR13N20DTRRP IRFR13N20DTRRP Infineon Technologies irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f Description: MOSFET N-CH 200V 13A DPAK
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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IRLR3717TRLPBF IRLR3717TRLPBF Infineon Technologies IRLR3717PbF%2CIRLU3717PbF.pdf Description: MOSFET N-CH 20V 120A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR48ZTRLPBF IRFR48ZTRLPBF Infineon Technologies irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRGR3B60KD2TRLP IRGR3B60KD2TRLP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 7.8A TO-252AA
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRGR3B60KD2TRRP IRGR3B60KD2TRRP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 7.8A TO252AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
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IRLR8113TRRPBF IRLR8113TRRPBF Infineon Technologies IRLR8113PbF, IRLU8113PbF.pdf Description: MOSFET N-CH 30V 94A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRLR8113TRLPBF IRLR8113TRLPBF Infineon Technologies IRLR8113PbF%2C%20IRLU8113PbF.pdf Description: MOSFET N-CH 30V 94A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR12N25DTRRP IRFR12N25DTRRP Infineon Technologies IRF%28R%2CU%2912N25DPbF.pdf Description: MOSFET N-CH 250V 14A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR12N25DCTRRP IRFR12N25DCTRRP Infineon Technologies IRFR12N25D.pdf Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR12N25DTRLP IRFR12N25DTRLP Infineon Technologies IRF%28R%2CU%2912N25DPbF.pdf Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR12N25DCTRLP IRFR12N25DCTRLP Infineon Technologies IRFR12N25D.pdf Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRLR8103VTRLPBF IRLR8103VTRLPBF Infineon Technologies irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd Description: MOSFET N-CH 30V 91A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR15N20DTRLP IRFR15N20DTRLP Infineon Technologies irfr15n20dpbf.pdf Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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IRFR15N20DTRRP IRFR15N20DTRRP Infineon Technologies irfr15n20dpbf.pdf Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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IRFR2407TRRPBF IRFR2407TRRPBF Infineon Technologies infineon-irfr2407-datasheet-en.pdf Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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IRG4RC10UTRLPBF IRG4RC10UTRLPBF Infineon Technologies IRG4RC10UPbF.pdf Description: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 19ns/116ns
Switching Energy: 80µJ (on), 160µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
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IPS1031RTRRPBF IPS1031RTRRPBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
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IRG4RC10SDTRLP IRG4RC10SDTRLP Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 14A 38W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IRG4RC10SDTRRP IRG4RC10SDTRRP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Td (on/off) @ 25°C: 76ns/815ns
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IRFR13N20DCTRRP IRFR13N20DCTRRP Infineon Technologies IRFR13N20D, IRFU13N20D.pdf Description: MOSFET N-CH 200V 13A DPAK
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IRFR13N20DCTRLP IRFR13N20DCTRLP Infineon Technologies IRFR13N20D%2C%20IRFU13N20D.pdf Description: MOSFET N-CH 200V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
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IRFR1010ZTRLPBF IRFR1010ZTRLPBF Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR1010ZTRRPBF IRFR1010ZTRRPBF Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR3418TRLPBF IRFR3418TRLPBF Infineon Technologies irfr3418pbf.pdf Description: MOSFET N-CH 80V 70A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRLR7843TRRPBF IRLR7843TRRPBF Infineon Technologies irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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IRFR4105TRLPBF IRFR4105TRLPBF Infineon Technologies irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9 Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFR3412TRLPBF IRFR3412TRLPBF Infineon Technologies irfr3412pbf.pdf Description: MOSFET N-CH 100V 48A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR3412TRRPBF IRFR3412TRRPBF Infineon Technologies irfr3412pbf.pdf Description: MOSFET N-CH 100V 48A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR4104TRRPBF IRFR4104TRRPBF Infineon Technologies irfr4104pbf.pdf?fileId=5546d462533600a40153563207e320e6 Description: MOSFET N-CH 40V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRLR2905TRRPBF IRLR2905TRRPBF Infineon Technologies irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFR1205TRLPBF IRFR1205TRLPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFR3710ZTRLPBF IRFR3710ZTRLPBF Infineon Technologies irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
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IRFR3710ZTRRPBF IRFR3710ZTRRPBF Infineon Technologies irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
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IPS1021RTRRPBF IPS1021RTRRPBF Infineon Technologies IPS1021%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.3A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRLR8503TRLPBF IRLR8503TRLPBF Infineon Technologies irlr8503pbf.pdf Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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IRLR7833CTRLPBF IRLR7833CTRLPBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta)
Power Dissipation (Max): 140W (Tc)
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
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IRLR7833CTRRPBF IRLR7833CTRRPBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta)
Power Dissipation (Max): 140W (Tc)
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
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IPS1011RTRRPBF IPS1011RTRRPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
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BCR450E6327HTSA1 BCR450E6327HTSA1 Infineon Technologies bcr450.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a304314dca38901156008609e1dc9 Description: IC LED DRVR LIN PWM 85MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 85mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 27V
Part Status: Not For New Designs
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BCR450E6327HTSA1 BCR450E6327HTSA1 Infineon Technologies bcr450.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a304314dca38901156008609e1dc9 Description: IC LED DRVR LIN PWM 85MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 85mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 27V
Part Status: Not For New Designs
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CY2313ANZSC-1 CY2313ANZSC-1 Infineon Technologies CY2313ANZ.pdf Description: IC CLOCK BUFFER MEMORY 28-SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: Memory, SDRAM DIMM
Ratio - Input:Output: 1:13
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
PLL: No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY26121ZI-21 CY26121ZI-21 Infineon Technologies CY26121.pdf Description: IC FANOUT DIST 16TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 33.33MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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CY30703 Infineon Technologies CY30703.pdf Description: EVAL BOARD FOR CY27EE16
Utilized IC / Part: CY27EE16
Contents: Board(s)
Type: Timing
Function: Clock Generator
Packaging: Box
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CY3094 Infineon Technologies Description: SOCKET ADAPTER FTG
Utilized IC / Part: CY2292F (SOIC only)
Accessory Type: Socket Adapter
For Use With/Related Products: CY2292F (SOIC only)
Packaging: Box
Produkt ist nicht verfügbar
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CY3097 Infineon Technologies CY3670%20FTG%20Programming%20Kit.pdf Description: SOCKET ADAPTER FTG FOR CY2907F8
Utilized IC / Part: CY2907F8
Accessory Type: Socket Adapter
For Use With/Related Products: CY2907F8
Packaging: Box
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CY3098 Infineon Technologies CY3670%20FTG%20Programming%20Kit.pdf Description: SOCKET ADAPTER FTG FOR CY2907F14
Utilized IC / Part: CY2907F14
Accessory Type: Socket Adapter
For Use With/Related Products: CY2907F14
Packaging: Box
Produkt ist nicht verfügbar
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CY37256VP256-66BBI CY37256VP256-66BBI Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 256MC 20NS 256LFBGA
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CY37512P256-100BGI Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 512MC 12NS 292BGA
DigiKey Programmable: Not Verified
Number of I/O: 197
Voltage Supply - Internal: 4.5V ~ 5.5V
Supplier Device Package: 292-PBGA (27x27)
Delay Time tpd(1) Max: 12 ns
Operating Temperature: -40°C ~ 85°C (TA)
Number of Macrocells: 512
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 292-BGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY4636B Infineon Technologies authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=68adfbd24add594b2f2f6653437303e6%3A%2Fdgdlac%2FInfineon-CY46 Description: KIT WIRELESS USB LP FOR CYRF6936
Packaging: Box
For Use With/Related Products: CY4636B
Frequency: 2.4GHz
Type: Transceiver
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: CY4636B
Produkt ist nicht verfügbar
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CY4636L Infineon Technologies authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=68adfbd24add594b2f2f6653437303e6%3A%2Fdgdlac%2FInfineon-CY46 Description: KIT WIRELESS USB LP FOR CYRF6936
Supplied Contents: Board(s)
Type: WirelessUSB
Frequency: 2.4GHz
Packaging: Box
Produkt ist nicht verfügbar
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CY4672-69103 Infineon Technologies CY4672_QSG.pdf Description: KIT POD FOR 69103
Accessory Type: Emulation Pod
For Use With/Related Products: CY4672, CYRF69103
Packaging: Box
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CY4672-69213 Infineon Technologies CY4672_QSG.pdf Description: KIT POD FOR 69213
Accessory Type: Emulation Pod
For Use With/Related Products: CY4672, CYRF69213
Packaging: Box
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CY5301 Infineon Technologies Description: PIONEER CY7C53120E4 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Board Type: Evaluation Platform
Utilized IC / Part: CY7C53120E4
Platform: Pioneer
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY62126DV30L-55ZSXE CY62126DV30L-55ZSXE Infineon Technologies CY62126DV30%20MoBL.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY62128BLL-70ZRXE CY62128BLL-70ZRXE Infineon Technologies CY62128B.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 32-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
IRFR6215TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR540ZTRRPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRFR18N15DTRRP irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069
IRFR18N15DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPS1041RTRRPBF IPS1041%28L%2CR%29PbF%2CIPS1042GPbF.pdf
IPS1041RTRRPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR13N20DTRLP irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f
IRFR13N20DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR13N20DTRRP irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f
IRFR13N20DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 13A DPAK
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR3717TRLPBF IRLR3717PbF%2CIRLU3717PbF.pdf
IRLR3717TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 120A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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IRFR48ZTRLPBF irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa
IRFR48ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRGR3B60KD2TRLP fundamentals-of-power-semiconductors
IRGR3B60KD2TRLP
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 7.8A TO-252AA
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRGR3B60KD2TRRP fundamentals-of-power-semiconductors
IRGR3B60KD2TRRP
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 7.8A TO252AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Produkt ist nicht verfügbar
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IRLR8113TRRPBF IRLR8113PbF, IRLU8113PbF.pdf
IRLR8113TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 94A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRLR8113TRLPBF IRLR8113PbF%2C%20IRLU8113PbF.pdf
IRLR8113TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 94A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR12N25DTRRP IRF%28R%2CU%2912N25DPbF.pdf
IRFR12N25DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFR12N25DCTRRP IRFR12N25D.pdf
IRFR12N25DCTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFR12N25DTRLP IRF%28R%2CU%2912N25DPbF.pdf
IRFR12N25DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR12N25DCTRLP IRFR12N25D.pdf
IRFR12N25DCTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRLR8103VTRLPBF irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd
IRLR8103VTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR15N20DTRLP irfr15n20dpbf.pdf
IRFR15N20DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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IRFR15N20DTRRP irfr15n20dpbf.pdf
IRFR15N20DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR2407TRRPBF infineon-irfr2407-datasheet-en.pdf
IRFR2407TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IRG4RC10UTRLPBF IRG4RC10UPbF.pdf
IRG4RC10UTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 19ns/116ns
Switching Energy: 80µJ (on), 160µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
Produkt ist nicht verfügbar
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IPS1031RTRRPBF IPS1031%28S%2CR%29PbF.pdf
IPS1031RTRRPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
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IRG4RC10SDTRLP Part_Number_Guide_Web.pdf
IRG4RC10SDTRLP
Hersteller: Infineon Technologies
Description: IGBT 600V 14A 38W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IRG4RC10SDTRRP fundamentals-of-power-semiconductors
IRG4RC10SDTRRP
Hersteller: Infineon Technologies
Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Td (on/off) @ 25°C: 76ns/815ns
Produkt ist nicht verfügbar
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IRFR13N20DCTRRP IRFR13N20D, IRFU13N20D.pdf
IRFR13N20DCTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 13A DPAK
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IRFR13N20DCTRLP IRFR13N20D%2C%20IRFU13N20D.pdf
IRFR13N20DCTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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IRFR1010ZTRLPBF irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f
IRFR1010ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR1010ZTRRPBF irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f
IRFR1010ZTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR3418TRLPBF irfr3418pbf.pdf
IRFR3418TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRLR7843TRRPBF irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8
IRLR7843TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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IRFR4105TRLPBF irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9
IRFR4105TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFR3412TRLPBF irfr3412pbf.pdf
IRFR3412TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 48A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR3412TRRPBF irfr3412pbf.pdf
IRFR3412TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 48A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR4104TRRPBF irfr4104pbf.pdf?fileId=5546d462533600a40153563207e320e6
IRFR4104TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRLR2905TRRPBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFR1205TRLPBF IR_PartNumberingSystem.pdf
IRFR1205TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFR3710ZTRLPBF irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb
IRFR3710ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
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IRFR3710ZTRRPBF irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb
IRFR3710ZTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Produkt ist nicht verfügbar
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IPS1021RTRRPBF IPS1021%28S%2CR%29PbF.pdf
IPS1021RTRRPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.3A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRLR8503TRLPBF irlr8503pbf.pdf
IRLR8503TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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IRLR7833CTRLPBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLR7833CTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta)
Power Dissipation (Max): 140W (Tc)
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRLR7833CTRRPBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLR7833CTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta)
Power Dissipation (Max): 140W (Tc)
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPS1011RTRRPBF Part_Number_Guide_Web.pdf
IPS1011RTRRPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Produkt ist nicht verfügbar
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BCR450E6327HTSA1 bcr450.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a304314dca38901156008609e1dc9
BCR450E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 85MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 85mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 27V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCR450E6327HTSA1 bcr450.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a304314dca38901156008609e1dc9
BCR450E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 85MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 85mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 27V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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CY2313ANZSC-1 CY2313ANZ.pdf
CY2313ANZSC-1
Hersteller: Infineon Technologies
Description: IC CLOCK BUFFER MEMORY 28-SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: Memory, SDRAM DIMM
Ratio - Input:Output: 1:13
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
PLL: No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY26121ZI-21 CY26121.pdf
CY26121ZI-21
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 33.33MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY30703 CY30703.pdf
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CY27EE16
Utilized IC / Part: CY27EE16
Contents: Board(s)
Type: Timing
Function: Clock Generator
Packaging: Box
Produkt ist nicht verfügbar
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CY3094
Hersteller: Infineon Technologies
Description: SOCKET ADAPTER FTG
Utilized IC / Part: CY2292F (SOIC only)
Accessory Type: Socket Adapter
For Use With/Related Products: CY2292F (SOIC only)
Packaging: Box
Produkt ist nicht verfügbar
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CY3097 CY3670%20FTG%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: SOCKET ADAPTER FTG FOR CY2907F8
Utilized IC / Part: CY2907F8
Accessory Type: Socket Adapter
For Use With/Related Products: CY2907F8
Packaging: Box
Produkt ist nicht verfügbar
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CY3098 CY3670%20FTG%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: SOCKET ADAPTER FTG FOR CY2907F14
Utilized IC / Part: CY2907F14
Accessory Type: Socket Adapter
For Use With/Related Products: CY2907F14
Packaging: Box
Produkt ist nicht verfügbar
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CY37256VP256-66BBI Ultra%20370000%20CPLD%20Family.pdf
CY37256VP256-66BBI
Hersteller: Infineon Technologies
Description: IC CPLD 256MC 20NS 256LFBGA
Produkt ist nicht verfügbar
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CY37512P256-100BGI Ultra%20370000%20CPLD%20Family.pdf
Hersteller: Infineon Technologies
Description: IC CPLD 512MC 12NS 292BGA
DigiKey Programmable: Not Verified
Number of I/O: 197
Voltage Supply - Internal: 4.5V ~ 5.5V
Supplier Device Package: 292-PBGA (27x27)
Delay Time tpd(1) Max: 12 ns
Operating Temperature: -40°C ~ 85°C (TA)
Number of Macrocells: 512
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 292-BGA
Packaging: Tray
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CY4636B authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=68adfbd24add594b2f2f6653437303e6%3A%2Fdgdlac%2FInfineon-CY46
Hersteller: Infineon Technologies
Description: KIT WIRELESS USB LP FOR CYRF6936
Packaging: Box
For Use With/Related Products: CY4636B
Frequency: 2.4GHz
Type: Transceiver
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: CY4636B
Produkt ist nicht verfügbar
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CY4636L authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=68adfbd24add594b2f2f6653437303e6%3A%2Fdgdlac%2FInfineon-CY46
Hersteller: Infineon Technologies
Description: KIT WIRELESS USB LP FOR CYRF6936
Supplied Contents: Board(s)
Type: WirelessUSB
Frequency: 2.4GHz
Packaging: Box
Produkt ist nicht verfügbar
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CY4672-69103 CY4672_QSG.pdf
Hersteller: Infineon Technologies
Description: KIT POD FOR 69103
Accessory Type: Emulation Pod
For Use With/Related Products: CY4672, CYRF69103
Packaging: Box
Produkt ist nicht verfügbar
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CY4672-69213 CY4672_QSG.pdf
Hersteller: Infineon Technologies
Description: KIT POD FOR 69213
Accessory Type: Emulation Pod
For Use With/Related Products: CY4672, CYRF69213
Packaging: Box
Produkt ist nicht verfügbar
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CY5301
Hersteller: Infineon Technologies
Description: PIONEER CY7C53120E4 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Board Type: Evaluation Platform
Utilized IC / Part: CY7C53120E4
Platform: Pioneer
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY62126DV30L-55ZSXE CY62126DV30%20MoBL.pdf
CY62126DV30L-55ZSXE
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY62128BLL-70ZRXE CY62128B.pdf
CY62128BLL-70ZRXE
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 32-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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