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IPD040N03LGATMA1 IPD040N03LGATMA1 Infineon Technologies IPD040N03LG_rev1.01.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
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IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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IPD060N03LGATMA1 IPD060N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IPD075N03LGATMA1 IPD075N03LGATMA1 Infineon Technologies infineon-ipd075n03lg-datasheet-en.pdf Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
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IPD090N03LGATMA1 IPD090N03LGATMA1 Infineon Technologies Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181 Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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BCR401UE6327HTSA1 BCR401UE6327HTSA1 Infineon Technologies dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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BSC025N03LS G BSC025N03LS G Infineon Technologies download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1 Description: MOSFET N-CH 30V 100A TDSON-8
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TLE6282GXUMA1 TLE6282GXUMA1 Infineon Technologies TLE6282G.pdf Description: IC MOTOR DRIVER 7.5V-60V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 7.5V ~ 60V
Technology: Power MOSFET
Supplier Device Package: PG-DSO-20-45
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
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IRFR3706CPBF IRFR3706CPBF Infineon Technologies irfr3706cpbf.pdf Description: MOSFET N-CH 20V 75A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRF7534D1PBF IRF7534D1PBF Infineon Technologies IRF7534D1PbF.pdf description Description: MOSFET P-CH 20V 4.3A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
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IRFR120NCPBF IRFR120NCPBF Infineon Technologies irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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IRLR7807ZCPBF IRLR7807ZCPBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 43A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRFR5305CPBF IRFR5305CPBF Infineon Technologies IRFR%20U5305.pdf Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRLR7811WCPBF IRLR7811WCPBF Infineon Technologies irlr7811wcpbf.pdf Description: MOSFET N-CH 30V 64A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IR2102SPBF IR2102SPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFU4104-701PBF IRFU4104-701PBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 40V 42A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IRF8707PBF IRF8707PBF Infineon Technologies irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b description Description: MOSFET N-CH 30V 11A 8SO
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
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IRS2168DSPBF IRS2168DSPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
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IRF7459PBF IRF7459PBF Infineon Technologies IRF7459PbF.pdf Description: MOSFET N-CH 20V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRL3713SPBF IRL3713SPBF Infineon Technologies irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d description Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
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IPS1031SPBF IPS1031SPBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 3.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRG4PC40KDE206P IRG4PC40KDE206P Infineon Technologies irg4pc40kdpbf.pdf?fileId=5546d462533600a401535644123422d6 Description: IGBT 600V 42A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 53ns/110ns
Switching Energy: 950µJ (on), 760µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
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IRFU3709Z-701P IRFU3709Z-701P Infineon Technologies IRFR3709Z,%20IRFU3709Z.pdf Description: MOSFET N-CH 30V 86A IPAK
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PVT312SPBF PVT312SPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 190MA 0-250V
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 190 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
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IRFR6215CPBF IRFR6215CPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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IRL3716SPBF IRL3716SPBF Infineon Technologies IRL3716%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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PVT212SPBF PVT212SPBF Infineon Technologies pvt212.pdf?fileId=5546d462533600a4015356841646295d Description: SSR RELAY SPST-NO 550MA 0-150V
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4RC10UPBF IRG4RC10UPBF Infineon Technologies IRG4RC10UPbF.pdf Description: IGBT 600V 8.5A 38W DPAK
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IRF8721PBF IRF8721PBF Infineon Technologies irf8721pbf.pdf?fileId=5546d462533600a40153560d86f61d79 description Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRG4RC10SPBF IRG4RC10SPBF Infineon Technologies IRG4RC10SPbF.pdf Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 140µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 25ns/630ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRF7240PBF IRF7240PBF Infineon Technologies irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2 Description: MOSFET P-CH 40V 10.5A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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IRF8736PBF IRF8736PBF Infineon Technologies irf8736pbf.pdf?fileId=5546d462533600a40153560d9e661d7f description Description: MOSFET N-CH 30V 18A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V
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IRFR540ZPBF IRFR540ZPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 description Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRLR3410CPBF IRLR3410CPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRFR3303CPBF IRFR3303CPBF Infineon Technologies IRFR%2CU3303.pdf Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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IRFR5505CPBF IRFR5505CPBF Infineon Technologies IRF%28R%2CU%295505PbF.pdf Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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IRF7854PBF IRF7854PBF Infineon Technologies irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29 Description: MOSFET N-CH 80V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IPS1031RPBF IPS1031RPBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
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IRF8714PBF IRF8714PBF Infineon Technologies irf8714pbf.pdf?fileId=5546d462533600a40153560d6f0f1d71 description Description: MOSFET N-CH 30V 14A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IR2166SPBF IR2166SPBF Infineon Technologies ir2166.pdf?fileId=5546d462533600a4015355c9049416c0 Description: IC PFC/BALLAST CNTL 50KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 50kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10V ~ 17V
Supplier Device Package: 16-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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IPS1011RPBF IPS1011RPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 10mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF6215L-103PBF IRF6215L-103PBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A TO262
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IRF7524D1PBF IRF7524D1PBF Infineon Technologies IRF7524D1PbF.pdf Description: MOSFET P-CH 20V 1.7A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IP1203PBF IP1203PBF Infineon Technologies IP1203PbF.pdf Description: IC REG BUCK ADJUSTABLE 15A LGA
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IRLR4343-701PBF IRLR4343-701PBF Infineon Technologies IRLR4343%2C%20IRLU4343%2C-701.pdf Description: MOSFET N-CH 55V 26A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: I-PAK (LF701)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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IRLR8721PBF IRLR8721PBF Infineon Technologies IRLR8721PbF%2CIRLU8721PbF.pdf description Description: MOSFET N-CH 30V 65A DPAK
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 65W (Tc)
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IRFR220NCPBF IRFR220NCPBF Infineon Technologies IRFR220N%2C%20IRFU220N.pdf Description: MOSFET N-CH 200V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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IRLR8743PBF IRLR8743PBF Infineon Technologies irlr8743pbf.pdf?fileId=5546d462533600a4015356719c7e26ff description Description: MOSFET N-CH 30V 160A DPAK
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
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IRL3803VSPBF IRL3803VSPBF Infineon Technologies irl3803vspbf.pdf Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
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IRF7494PBF IRF7494PBF Infineon Technologies IRF7494PbF.pdf Description: MOSFET N-CH 150V 5.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRFU3706-701PBF IRFU3706-701PBF Infineon Technologies IRF(R,U)3706PbF.pdf Description: MOSFET N-CH 20V 75A IPAK
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IRU3037ACFPBF IRU3037ACFPBF Infineon Technologies IRU3037%28A%20%2CPbF%29.pdf Description: IC REG CTRLR BUCK/BOOST 8TSSOP
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-TSSOP
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Topology: Buck, Boost
Frequency - Switching: 400kHz
Output Configuration: Positive
Function: Step-Up, Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Operating Temperature: 0°C ~ 70°C (TA)
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IRU3037CFPBF IRU3037CFPBF Infineon Technologies IRU3037(A ,PbF).pdf Description: IC REG CTRLR BUCK/BOOST 8TSSOP
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-TSSOP
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Topology: Buck, Boost
Frequency - Switching: 200kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Down
Output Type: Transistor Driver
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IRLR9343-701PBF IRLR9343-701PBF Infineon Technologies irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702 Description: MOSFET P-CH 55V 20A IPAK
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I-PAK (LF701)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Packaging: Tube
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IRF9Z24NSPBF IRF9Z24NSPBF Infineon Technologies Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Description: MOSFET P-CH 55V 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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IRF9520NSPBF IRF9520NSPBF Infineon Technologies irf9520nspbf.pdf Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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IRFSL23N20D102P IRFSL23N20D102P Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A TO262
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Produkt ist nicht verfügbar
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IRG4PF50WD-201P IRG4PF50WD-201P Infineon Technologies irg4pf50wdpbf.pdf?fileId=5546d462533600a401535647eed32305 Description: IGBT 900V 51A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 2.63mJ (on), 1.34mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRF4905SPBF IRF4905SPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRF7853PBF IRF7853PBF Infineon Technologies irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27 Description: MOSFET N-CH 100V 8.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IPD040N03LGATMA1 IPD040N03LG_rev1.01.pdf
IPD040N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
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10+2.18 EUR
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IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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7+3.08 EUR
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IPD060N03LGATMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPD060N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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8+2.89 EUR
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IPD075N03LGATMA1 infineon-ipd075n03lg-datasheet-en.pdf
IPD075N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
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IPD090N03LGATMA1 Infineon-IPD090N03LG-DS-v01_09-en.pdf?fileId=db3a304327b897500127d89522867181
IPD090N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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9+2.56 EUR
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BCR401UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d
BCR401UE6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 244288 Stücke:
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38+0.56 EUR
54+0.39 EUR
61+0.35 EUR
100+0.3 EUR
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500+0.26 EUR
1000+0.25 EUR
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BSC025N03LS G download.html?filename=%2Fdgdl%2FBSC025N03LS_rev1.2.pdf%3FfolderId%3Ddb3a304412b407950112b408e8c90004%26fileId%3Ddb3a304412b407950112b4274ff53bff&location=.en.product.findProductTypeByName.html_dgdl_BSC025N03LS_rev1
BSC025N03LS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
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TLE6282GXUMA1 TLE6282G.pdf
TLE6282GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 7.5V-60V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 7.5V ~ 60V
Technology: Power MOSFET
Supplier Device Package: PG-DSO-20-45
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
Produkt ist nicht verfügbar
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IRFR3706CPBF irfr3706cpbf.pdf
IRFR3706CPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 75A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRF7534D1PBF description IRF7534D1PbF.pdf
IRF7534D1PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.3A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR120NCPBF irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d
IRFR120NCPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR7807ZCPBF fundamentals-of-power-semiconductors
IRLR7807ZCPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 43A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR5305CPBF IRFR%20U5305.pdf
IRFR5305CPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR7811WCPBF irlr7811wcpbf.pdf
IRLR7811WCPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IR2102SPBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRFU4104-701PBF IR_PartNumberingSystem.pdf
IRFU4104-701PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRF8707PBF description irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
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IRS2168DSPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSPBF
Hersteller: Infineon Technologies
Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
Produkt ist nicht verfügbar
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IRF7459PBF IRF7459PbF.pdf
IRF7459PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRL3713SPBF description irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d
IRL3713SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
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IPS1031SPBF IPS1031%28S%2CR%29PbF.pdf
IPS1031SPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 3.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4PC40KDE206P irg4pc40kdpbf.pdf?fileId=5546d462533600a401535644123422d6
IRG4PC40KDE206P
Hersteller: Infineon Technologies
Description: IGBT 600V 42A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 53ns/110ns
Switching Energy: 950µJ (on), 760µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IRFU3709Z-701P IRFR3709Z,%20IRFU3709Z.pdf
IRFU3709Z-701P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 86A IPAK
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PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312SPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 190MA 0-250V
On-State Resistance (Max): 10 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 190 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
auf Bestellung 5418 Stücke:
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AnzahlPrivatkunde
3+9.03 EUR
10+8.03 EUR
25+7.68 EUR
50+7.41 EUR
100+7.16 EUR
250+6.83 EUR
500+6.6 EUR
1000+6.38 EUR
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IRFR6215CPBF IR_PartNumberingSystem.pdf
IRFR6215CPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRL3716SPBF IRL3716%28S%2CL%29PbF.pdf
IRL3716SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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PVT212SPBF pvt212.pdf?fileId=5546d462533600a4015356841646295d
PVT212SPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
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IRG4RC10UPBF IRG4RC10UPbF.pdf
IRG4RC10UPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Produkt ist nicht verfügbar
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IRF8721PBF description irf8721pbf.pdf?fileId=5546d462533600a40153560d86f61d79
IRF8721PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRG4RC10SPBF IRG4RC10SPbF.pdf
IRG4RC10SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 140µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 25ns/630ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF7240PBF irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2
IRF7240PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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IRF8736PBF description irf8736pbf.pdf?fileId=5546d462533600a40153560d9e661d7f
IRF8736PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V
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IRFR540ZPBF description irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRLR3410CPBF Part_Number_Guide_Web.pdf
IRLR3410CPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR3303CPBF IRFR%2CU3303.pdf
IRFR3303CPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR5505CPBF IRF%28R%2CU%295505PbF.pdf
IRFR5505CPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7854PBF irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29
IRF7854PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IPS1031RPBF IPS1031%28S%2CR%29PbF.pdf
IPS1031RPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
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IRF8714PBF description irf8714pbf.pdf?fileId=5546d462533600a40153560d6f0f1d71
IRF8714PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IR2166SPBF ir2166.pdf?fileId=5546d462533600a4015355c9049416c0
IR2166SPBF
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CNTL 50KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 50kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10V ~ 17V
Supplier Device Package: 16-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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IPS1011RPBF Part_Number_Guide_Web.pdf
IPS1011RPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-252AA (DPAK)
Ratio - Input:Output: 1:1
Current - Output (Max): 6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 10mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRF6215L-103PBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215L-103PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A TO262
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IRF7524D1PBF IRF7524D1PbF.pdf
IRF7524D1PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IP1203PBF IP1203PbF.pdf
IP1203PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 15A LGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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IRLR4343-701PBF IRLR4343%2C%20IRLU4343%2C-701.pdf
IRLR4343-701PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 26A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: I-PAK (LF701)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Produkt ist nicht verfügbar
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IRLR8721PBF description IRLR8721PbF%2CIRLU8721PbF.pdf
IRLR8721PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 65W (Tc)
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IRFR220NCPBF IRFR220N%2C%20IRFU220N.pdf
IRFR220NCPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR8743PBF description irlr8743pbf.pdf?fileId=5546d462533600a4015356719c7e26ff
IRLR8743PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
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IRL3803VSPBF irl3803vspbf.pdf
IRL3803VSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
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IRF7494PBF IRF7494PbF.pdf
IRF7494PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRFU3706-701PBF IRF(R,U)3706PbF.pdf
IRFU3706-701PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 75A IPAK
Produkt ist nicht verfügbar
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IRU3037ACFPBF IRU3037%28A%20%2CPbF%29.pdf
IRU3037ACFPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8TSSOP
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-TSSOP
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Topology: Buck, Boost
Frequency - Switching: 400kHz
Output Configuration: Positive
Function: Step-Up, Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Operating Temperature: 0°C ~ 70°C (TA)
Produkt ist nicht verfügbar
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IRU3037CFPBF IRU3037(A ,PbF).pdf
IRU3037CFPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8TSSOP
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-TSSOP
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Topology: Buck, Boost
Frequency - Switching: 200kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Down
Output Type: Transistor Driver
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IRLR9343-701PBF irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702
IRLR9343-701PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 20A IPAK
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I-PAK (LF701)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Packaging: Tube
Produkt ist nicht verfügbar
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IRF9Z24NSPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
IRF9Z24NSPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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IRF9520NSPBF irf9520nspbf.pdf
IRF9520NSPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRFSL23N20D102P irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFSL23N20D102P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO262
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
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IRG4PF50WD-201P irg4pf50wdpbf.pdf?fileId=5546d462533600a401535647eed32305
IRG4PF50WD-201P
Hersteller: Infineon Technologies
Description: IGBT 900V 51A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 2.63mJ (on), 1.34mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W
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IRF4905SPBF irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905SPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRF7853PBF irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27
IRF7853PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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