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IRS2153DSTRPBF IRS2153DSTRPBF INFINEON TECHNOLOGIES irs2153d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IRFB3077PBFXKMA1 IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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30+2.93 EUR
34+2.57 EUR
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES IRFB7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.66 EUR
21+4.13 EUR
26+3.33 EUR
50+2.43 EUR
100+2.17 EUR
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
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24+3.57 EUR
28+3.05 EUR
31+2.81 EUR
32+2.69 EUR
50+2.55 EUR
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1958 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.31 EUR
92+0.93 EUR
126+0.68 EUR
144+0.6 EUR
250+0.51 EUR
500+0.46 EUR
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES BSO211PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -4.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.49 EUR
190+0.45 EUR
205+0.42 EUR
225+0.38 EUR
Mindestbestellmenge: 173 Stücke
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1157 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.52 EUR
34+2.52 EUR
40+2.13 EUR
43+1.99 EUR
50+1.82 EUR
100+1.7 EUR
500+1.43 EUR
1000+1.33 EUR
Mindestbestellmenge: 25 Stücke
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BC817UE6327HTSA1 BC817UE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
182+0.46 EUR
202+0.42 EUR
262+0.32 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 162 Stücke
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IRS2103STRPBF IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 750ns
Kind of package: reel; tape
Case: SO8
Turn-off time: 185ns
Produkt ist nicht verfügbar
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ITS4140N ITS4140N INFINEON TECHNOLOGIES ITS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Mounting: SMD
Supply voltage: 4.9...60V DC
Output current: 0.2A
Kind of output: N-Channel
Technology: Industrial PROFET
Case: SOT223-4
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 4016 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.57 EUR
60+1.43 EUR
68+1.26 EUR
100+1.14 EUR
500+1.07 EUR
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES BSS159NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: depletion
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
214+0.39 EUR
261+0.32 EUR
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BCR402WH6327XTSA1 BCR402WH6327XTSA1 INFINEON TECHNOLOGIES bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Output current: 20...60mA
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.2...18V DC
Topology: single transistor
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
285+0.3 EUR
325+0.26 EUR
388+0.21 EUR
459+0.19 EUR
Mindestbestellmenge: 228 Stücke
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IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES irfb3006gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES ICL8001G-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: phase-cut dimming; soft-start function
Case: PG-DSO-8
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Number of channels: 1
Operating voltage: 10.5...26V DC
Topology: flyback
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.59 EUR
61+1.42 EUR
67+1.27 EUR
100+1.21 EUR
Mindestbestellmenge: 54 Stücke
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Power: 1W
Turn-off time: 180ns
Voltage class: 200V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
28+3.05 EUR
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 14.7mΩ
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
39+2.18 EUR
Mindestbestellmenge: 39 Stücke
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES irfr4620pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.33 EUR
37+2.34 EUR
43+1.99 EUR
50+1.75 EUR
100+1.57 EUR
500+1.21 EUR
1000+1.12 EUR
Mindestbestellmenge: 26 Stücke
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2106STRPBF IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.6A
auf Bestellung 2791 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.15 EUR
695+0.12 EUR
839+0.1 EUR
887+0.096 EUR
918+0.093 EUR
977+0.087 EUR
1036+0.082 EUR
Mindestbestellmenge: 556 Stücke
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.6A
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
848+0.1 EUR
997+0.086 EUR
1055+0.081 EUR
1139+0.075 EUR
Mindestbestellmenge: 625 Stücke
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IPF042N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Pulsed drain current: 556A
Power dissipation: 167W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 4.25mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.56 EUR
Mindestbestellmenge: 13 Stücke
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BSS138IXTSA1 BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
222+0.39 EUR
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IPD50N06S214ATMA2 IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BSS169H6906XTSA1 BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.17A
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 2.9Ω
Power dissipation: 0.36W
Gate charge: 2.8nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Power dissipation: 100W
Gate charge: 33nC
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPD096N08N3GATMA1 IPD096N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Drain current: 73A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 7.9mΩ
Mounting: SMD
Power dissipation: 100W
Gate charge: 35nC
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Operating temperature: -40...175°C
Power dissipation: 300W
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
9+9.94 EUR
10+8.94 EUR
11+7.91 EUR
Mindestbestellmenge: 9 Stücke
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SPB20N60S5ATMA1 SPB20N60S5ATMA1 INFINEON TECHNOLOGIES SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
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IPD100N04S402ATMA1 IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 1.7mΩ
Mounting: SMD
Power dissipation: 150W
Gate charge: 118nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Case: DPAK; TO252
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES irf1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Produkt ist nicht verfügbar
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IRF1310NSTRLPBF IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
On-state resistance: 0.19Ω
Mounting: SMD
Power dissipation: 208W
Gate charge: 10nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 560V
Case: D2PAK-3
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CPXKSA1 INFINEON TECHNOLOGIES IPA50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.14Ω
Drain current: 23A
Power dissipation: 34W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.13 EUR
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SPP15N60C3XKSA1 SPP15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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BSS84PH7894XTMA1 BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Case: TO247-3
Mounting: THT
Pulsed collector current: 300A
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Power dissipation: 536W
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2907AE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Frequency: 200MHz
Collector current: 0.6A
auf Bestellung 2407 Stücke:
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228+0.37 EUR
243+0.35 EUR
268+0.32 EUR
426+0.2 EUR
562+0.15 EUR
781+0.11 EUR
942+0.09 EUR
1073+0.08 EUR
Mindestbestellmenge: 228 Stücke
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IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES irfp4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Power dissipation: 370W
Gate charge: 150nC
Technology: HEXFET®
Gate-source voltage: ±20V
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPP030N10N5AKSA1 IPP030N10N5AKSA1 INFINEON TECHNOLOGIES IPP030N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.41 EUR
14+6.38 EUR
17+5.12 EUR
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IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES irlml2060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4458 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.51 EUR
256+0.33 EUR
439+0.19 EUR
625+0.13 EUR
1000+0.12 EUR
3000+0.11 EUR
Mindestbestellmenge: 167 Stücke
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BC817K40WH6327XTSA1 BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES IPB073N15N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 126 Stücke:
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126+0.68 EUR
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES SPP04N80C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.43 EUR
40+2.17 EUR
44+1.94 EUR
50+1.83 EUR
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SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.33 EUR
20+4.4 EUR
22+4.01 EUR
30+3.77 EUR
60+3.45 EUR
120+3.2 EUR
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Manufacturer series: PVI-NPbF
Turn-off time: 220µs
Kind of output: photodiode
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
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19+4.58 EUR
20+4.43 EUR
32+2.7 EUR
33+2.62 EUR
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BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES BFN26.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Produkt ist nicht verfügbar
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IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES irg4ph20kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 60W
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Collector current: 11A
Produkt ist nicht verfügbar
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IRF2805PBF IRF2805PBF INFINEON TECHNOLOGIES irf2805.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.38 EUR
39+2.19 EUR
45+1.93 EUR
54+1.59 EUR
100+1.36 EUR
250+1.21 EUR
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BAS7004E6327HTSA1 BAS7004E6327HTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.4 EUR
291+0.3 EUR
505+0.17 EUR
637+0.13 EUR
749+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 209 Stücke
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES irfi3205.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Mounting: THT
Power dissipation: 48W
Gate charge: 113.3nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 8mΩ
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.51 EUR
25+3.44 EUR
30+2.84 EUR
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IRS2153DSTRPBF irs2153d.pdf
IRS2153DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
IRFB3077PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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AnzahlPrivatkunde
30+2.93 EUR
34+2.57 EUR
Mindestbestellmenge: 30 Stücke
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IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7430PBF IRFB7430PBF.pdf
IRFB7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.66 EUR
21+4.13 EUR
26+3.33 EUR
50+2.43 EUR
100+2.17 EUR
Mindestbestellmenge: 19 Stücke
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IRFB3207PBF irfs3207pbf.pdf
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.57 EUR
28+3.05 EUR
31+2.81 EUR
32+2.69 EUR
50+2.55 EUR
Mindestbestellmenge: 24 Stücke
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1958 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
65+1.31 EUR
92+0.93 EUR
126+0.68 EUR
144+0.6 EUR
250+0.51 EUR
500+0.46 EUR
Mindestbestellmenge: 65 Stücke
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BSO211PHXUMA1 BSO211PHXUMA1-dte.pdf
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -4.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
173+0.49 EUR
190+0.45 EUR
205+0.42 EUR
225+0.38 EUR
Mindestbestellmenge: 173 Stücke
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IRF100B201 IRF100x201.pdf
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1157 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.52 EUR
34+2.52 EUR
40+2.13 EUR
43+1.99 EUR
50+1.82 EUR
100+1.7 EUR
500+1.43 EUR
1000+1.33 EUR
Mindestbestellmenge: 25 Stücke
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BC817UE6327HTSA1 BC817UE6327.pdf
BC817UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
182+0.46 EUR
202+0.42 EUR
262+0.32 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 162 Stücke
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
IRS2103STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 750ns
Kind of package: reel; tape
Case: SO8
Turn-off time: 185ns
Produkt ist nicht verfügbar
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ITS4140N ITS4140N.pdf
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Mounting: SMD
Supply voltage: 4.9...60V DC
Output current: 0.2A
Kind of output: N-Channel
Technology: Industrial PROFET
Case: SOT223-4
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 4016 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.57 EUR
60+1.43 EUR
68+1.26 EUR
100+1.14 EUR
500+1.07 EUR
Mindestbestellmenge: 55 Stücke
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BSS159NH6327XTSA2 BSS159NH6327XTSA2.pdf
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: depletion
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
214+0.39 EUR
261+0.32 EUR
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BCR402WH6327XTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Output current: 20...60mA
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.2...18V DC
Topology: single transistor
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
285+0.3 EUR
325+0.26 EUR
388+0.21 EUR
459+0.19 EUR
Mindestbestellmenge: 228 Stücke
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IRFB3006GPBF irfb3006gpbf.pdf
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ICL8001GXUMA1 ICL8001G-DTE.pdf
ICL8001GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: phase-cut dimming; soft-start function
Case: PG-DSO-8
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Number of channels: 1
Operating voltage: 10.5...26V DC
Topology: flyback
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
54+1.59 EUR
61+1.42 EUR
67+1.27 EUR
100+1.21 EUR
Mindestbestellmenge: 54 Stücke
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IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Power: 1W
Turn-off time: 180ns
Voltage class: 200V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.05 EUR
Mindestbestellmenge: 28 Stücke
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IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 14.7mΩ
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
39+2.18 EUR
Mindestbestellmenge: 39 Stücke
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IRFR4620TRLPBF irfr4620pbf.pdf
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.33 EUR
37+2.34 EUR
43+1.99 EUR
50+1.75 EUR
100+1.57 EUR
500+1.21 EUR
1000+1.12 EUR
Mindestbestellmenge: 26 Stücke
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS2106STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.6A
auf Bestellung 2791 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
556+0.15 EUR
695+0.12 EUR
839+0.1 EUR
887+0.096 EUR
918+0.093 EUR
977+0.087 EUR
1036+0.082 EUR
Mindestbestellmenge: 556 Stücke
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BAT5405WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.6A
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
848+0.1 EUR
997+0.086 EUR
1055+0.081 EUR
1139+0.075 EUR
Mindestbestellmenge: 625 Stücke
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Pulsed drain current: 556A
Power dissipation: 167W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 4.25mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7002VH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
Mindestbestellmenge: 13 Stücke
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
BSS138IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
222+0.39 EUR
Mindestbestellmenge: 222 Stücke
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IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
IPD50N06S214ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
BSS169H6906XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.17A
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 2.9Ω
Power dissipation: 0.36W
Gate charge: 2.8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Power dissipation: 100W
Gate charge: 33nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
IPD096N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Drain current: 73A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 7.9mΩ
Mounting: SMD
Power dissipation: 100W
Gate charge: 35nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BTS282ZE3230AKSA2 BTS282Z.pdf
BTS282ZE3230AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Operating temperature: -40...175°C
Power dissipation: 300W
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.94 EUR
10+8.94 EUR
11+7.91 EUR
Mindestbestellmenge: 9 Stücke
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SPB20N60S5ATMA1 SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e
SPB20N60S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
IPD100N04S402ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 1.7mΩ
Mounting: SMD
Power dissipation: 150W
Gate charge: 118nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Case: DPAK; TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRF1310NPBF irf1310n.pdf
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Produkt ist nicht verfügbar
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IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
IRF1310NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPB21N50C3ATMA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
On-state resistance: 0.19Ω
Mounting: SMD
Power dissipation: 208W
Gate charge: 10nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 560V
Case: D2PAK-3
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CP-DTE.pdf
IPA50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.14Ω
Drain current: 23A
Power dissipation: 34W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
auf Bestellung 29 Stücke:
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AnzahlPrivatkunde
14+6.13 EUR
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SPP15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPP15N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSS84PH7894XTMA1
BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Case: TO247-3
Mounting: THT
Pulsed collector current: 300A
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Power dissipation: 536W
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327.pdf
SMBT2907AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Frequency: 200MHz
Collector current: 0.6A
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
243+0.35 EUR
268+0.32 EUR
426+0.2 EUR
562+0.15 EUR
781+0.11 EUR
942+0.09 EUR
1073+0.08 EUR
Mindestbestellmenge: 228 Stücke
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IRFP4110PBF irfp4110pbf.pdf
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Power dissipation: 370W
Gate charge: 150nC
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 IPP030N10N5-DTE.pdf
IPP030N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3G-DTE.pdf
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.41 EUR
14+6.38 EUR
17+5.12 EUR
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
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IRLML2060TRPBF irlml2060pbf.pdf
IRLML2060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4458 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
256+0.33 EUR
439+0.19 EUR
625+0.13 EUR
1000+0.12 EUR
3000+0.11 EUR
Mindestbestellmenge: 167 Stücke
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BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
BC817K40WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 IPB073N15N5.pdf
IPB073N15N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817UE6327.pdf
BC817SUE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
126+0.68 EUR
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SPP04N80C3 SPP04N80C3.pdf
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
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35+2.43 EUR
40+2.17 EUR
44+1.94 EUR
50+1.83 EUR
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.33 EUR
20+4.4 EUR
22+4.01 EUR
30+3.77 EUR
60+3.45 EUR
120+3.2 EUR
Mindestbestellmenge: 16 Stücke
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PVI1050NSPBF Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Manufacturer series: PVI-NPbF
Turn-off time: 220µs
Kind of output: photodiode
Produkt ist nicht verfügbar
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IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.58 EUR
20+4.43 EUR
32+2.7 EUR
33+2.62 EUR
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BFN26E6327 BFN26.pdf
BFN26E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Produkt ist nicht verfügbar
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IRG4PH20KDPBF irg4ph20kdpbf.pdf
IRG4PH20KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 60W
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Collector current: 11A
Produkt ist nicht verfügbar
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IRF2805PBF description irf2805.pdf
IRF2805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.38 EUR
39+2.19 EUR
45+1.93 EUR
54+1.59 EUR
100+1.36 EUR
250+1.21 EUR
Mindestbestellmenge: 36 Stücke
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BAS7004E6327HTSA1 BAS7004E6327HTSA1.pdf
BAS7004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
291+0.3 EUR
505+0.17 EUR
637+0.13 EUR
749+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 209 Stücke
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IRFI3205PBF description irfi3205.pdf
IRFI3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Mounting: THT
Power dissipation: 48W
Gate charge: 113.3nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 8mΩ
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.51 EUR
25+3.44 EUR
30+2.84 EUR
Mindestbestellmenge: 19 Stücke
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