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AIGW50N65F5XKSA1 AIGW50N65F5XKSA1 INFINEON TECHNOLOGIES AIGW50N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES SPx21N50C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 0.19Ω
Mounting: THT
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 13.1A
Kind of channel: enhancement
Drain-source voltage: 560V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.34 EUR
22+3.92 EUR
25+3.44 EUR
Mindestbestellmenge: 20 Stücke
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BTS428L2 BTS428L2 INFINEON TECHNOLOGIES BTS428L2.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.53 EUR
20+4.38 EUR
100+3.53 EUR
250+3.21 EUR
500+2.98 EUR
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BTS441TG BTS441TG INFINEON TECHNOLOGIES BTS441TG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 1331 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.34 EUR
18+4.82 EUR
100+4.27 EUR
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IRFB3207ZGPBF IRFB3207ZGPBF INFINEON TECHNOLOGIES irfb3207zgpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3207ZPBF IRFB3207ZPBF INFINEON TECHNOLOGIES irfs3207zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.75 EUR
25+3.44 EUR
28+3.09 EUR
50+2.23 EUR
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BSS138WH6327XTSA1 BSS138WH6327XTSA1 INFINEON TECHNOLOGIES BSS138WH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Produkt ist nicht verfügbar
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BSS138WH6433XTMA1 BSS138WH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.12A
Technology: SIPMOS®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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IRFB4020PBF IRFB4020PBF INFINEON TECHNOLOGIES irfb4020pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
37+2.33 EUR
47+1.83 EUR
53+1.62 EUR
72+1.19 EUR
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IRS2184PBF IRS2184PBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 720ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 290ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: THT
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
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FM31256-GTR FM31256-GTR INFINEON TECHNOLOGIES FM3164_31256-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO14
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Clock frequency: 1MHz
Memory: 256kb FRAM
Kind of interface: serial
Memory organisation: 32kx8bit
Case: SO14
Interface: I2C
Kind of memory: FRAM
Mounting: SMD
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.29 EUR
10+16.7 EUR
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AIKW20N60CTXKSA1 AIKW20N60CTXKSA1 INFINEON TECHNOLOGIES AIKW20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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BCR185WH6327 BCR185WH6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 200MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
769+0.11 EUR
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AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 INFINEON TECHNOLOGIES AIGW50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 INFINEON TECHNOLOGIES AIKP20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.95 EUR
17+5.27 EUR
18+4.74 EUR
50+4.4 EUR
250+4.39 EUR
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AIKB20N60CTATMA1 AIKB20N60CTATMA1 INFINEON TECHNOLOGIES AIKB20N60CT.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IKQ120N60TXKSA1 INFINEON TECHNOLOGIES IKQ120N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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BFP183WH6327XTSA1 BFP183WH6327XTSA1 INFINEON TECHNOLOGIES bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT343
Current gain: 70...140
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
154+0.55 EUR
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BFP196WH6327 BFP196WH6327 INFINEON TECHNOLOGIES BFP196WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Kind of package: reel; tape
Power dissipation: 0.7W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT343
Frequency: 5GHz
Collector current: 0.15A
Mounting: SMD
Collector-emitter voltage: 20V
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
192+0.44 EUR
309+0.27 EUR
382+0.23 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 148 Stücke
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BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 INFINEON TECHNOLOGIES BSS209PW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
On-state resistance: 0.55Ω
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -0.63A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 3004 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
327+0.26 EUR
470+0.18 EUR
552+0.15 EUR
771+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
Mindestbestellmenge: 239 Stücke
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BSP171PH6327XTSA1 BSP171PH6327XTSA1 INFINEON TECHNOLOGIES BSP171PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
On-state resistance: 0.3Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -1.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.45 EUR
91+0.94 EUR
137+0.62 EUR
200+0.56 EUR
250+0.54 EUR
500+0.48 EUR
Mindestbestellmenge: 59 Stücke
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 INFINEON TECHNOLOGIES BSS816NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Case: SOT323
On-state resistance: 0.24Ω
Mounting: SMD
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.4 EUR
296+0.29 EUR
430+0.2 EUR
509+0.17 EUR
738+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 209 Stücke
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BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Max. forward voltage: 0.6V
Power dissipation: 0.15W
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.64 EUR
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 INFINEON TECHNOLOGIES BSS223PWH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -0.39A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.32 EUR
388+0.21 EUR
561+0.15 EUR
659+0.13 EUR
807+0.11 EUR
935+0.092 EUR
1053+0.081 EUR
Mindestbestellmenge: 264 Stücke
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IRFB7446PBF IRFB7446PBF INFINEON TECHNOLOGIES IRFB7446PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.06 EUR
70+1.23 EUR
88+0.98 EUR
100+0.88 EUR
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IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES irf7832pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3352 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.98 EUR
64+1.34 EUR
100+0.92 EUR
250+0.82 EUR
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BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES BSP135H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 60Ω
auf Bestellung 1612 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.06 EUR
62+1.38 EUR
79+1.08 EUR
100+0.98 EUR
200+0.88 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 42 Stücke
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES irs2101pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Power: 625mW
Turn-off time: 185ns
Number of channels: 2
Part status: Not recommended for new designs
Topology: MOSFET half-bridge
Output current: -600...290mA
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.36 EUR
65+1.31 EUR
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Max. forward voltage: 0.6V
Power dissipation: 0.15W
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
516+0.17 EUR
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BAT6405WH6327XTSA1 BAT6405WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Max. forward voltage: 0.75V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.8A
auf Bestellung 1575 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.24 EUR
463+0.18 EUR
511+0.17 EUR
705+0.12 EUR
834+0.1 EUR
1000+0.095 EUR
Mindestbestellmenge: 358 Stücke
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BTS6143D BTS6143D INFINEON TECHNOLOGIES BTS6143D.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2207 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.61 EUR
28+3.06 EUR
30+2.89 EUR
50+2.76 EUR
100+2.62 EUR
250+2.45 EUR
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES FF45MR12W1M1B11.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 50A
Case: AG-EASY1BM-2
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Type of semiconductor module: MOSFET transistor
Technology: CoolSiC™; SiC
Mechanical mounting: screw
Electrical mounting: Press-Fit
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge; NTC thermistor
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Lieferzeit 14-21 Tag (e)
1+89.04 EUR
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IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES irs2104.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 185ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
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44+1.94 EUR
50+1.7 EUR
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BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES BSS84P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1526 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
355+0.24 EUR
527+0.17 EUR
623+0.13 EUR
889+0.096 EUR
1025+0.083 EUR
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BAT6404WH6327XTSA1 BAT6404WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 1264 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
325+0.26 EUR
454+0.19 EUR
521+0.17 EUR
694+0.12 EUR
1000+0.11 EUR
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BAT6406WH6327XTSA1 BAT6406WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Max. forward voltage: 0.75V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.8A
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.32 EUR
410+0.2 EUR
562+0.15 EUR
642+0.13 EUR
848+0.1 EUR
Mindestbestellmenge: 264 Stücke
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IR11672ASTRPBF IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Voltage class: 200V
Type of integrated circuit: driver
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.55 EUR
40+2.17 EUR
42+2.05 EUR
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BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.1A
auf Bestellung 235 Stücke:
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235+0.36 EUR
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IRS2184STRPBF IRS2184STRPBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 720ns
Power: 625mW
Kind of package: reel; tape
Case: SO8
Turn-off time: 290ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES TT210N12KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Power: 625mW
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.58 EUR
74+1.15 EUR
82+1.04 EUR
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES BCR400W.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Output current: 10mA
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Power: 0.33W
Case: SOT343
Mounting: SMD
Supply voltage: 1.6...18V DC
auf Bestellung 2866 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
447+0.19 EUR
491+0.18 EUR
511+0.17 EUR
538+0.15 EUR
Mindestbestellmenge: 313 Stücke
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IRS21844STRPBF IRS21844STRPBF INFINEON TECHNOLOGIES infineon-irs2186-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Power: 1W
Turn-off time: 290ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.69 EUR
38+2.28 EUR
41+2.07 EUR
45+1.93 EUR
Mindestbestellmenge: 32 Stücke
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TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES TLD1120EL.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
auf Bestellung 1859 Stücke:
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76+1.12 EUR
91+0.94 EUR
102+0.84 EUR
103+0.83 EUR
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BTS724G BTS724G INFINEON TECHNOLOGIES BTS724G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
On-state resistance: 22.5mΩ
Mounting: SMD
Supply voltage: 5.5...40V DC
Output current: 3.3...7.3A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO20
Kind of integrated circuit: high-side
Number of channels: 4
auf Bestellung 1296 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.62 EUR
13+6.91 EUR
15+5.95 EUR
25+4.91 EUR
50+4.43 EUR
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES ITS4141N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 2297 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.38 EUR
49+1.75 EUR
54+1.59 EUR
55+1.55 EUR
100+1.48 EUR
250+1.45 EUR
Mindestbestellmenge: 36 Stücke
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Case: SOT343
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Type of diode: Schottky switching
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 71 Stücke:
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71+1.19 EUR
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ITS5215L ITS5215L INFINEON TECHNOLOGIES ITS5215L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.68 EUR
26+3.3 EUR
30+2.84 EUR
34+2.53 EUR
50+2.45 EUR
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES IKD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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IRFP4468PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
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12+7.39 EUR
18+4.88 EUR
25+4.27 EUR
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IRFP4668PBFXKMA1 IRFP4668PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfp4668-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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14+6.21 EUR
16+5.66 EUR
18+4.83 EUR
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IRF7103TRPBFXTMA1 IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.45 EUR
93+0.92 EUR
143+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 59 Stücke
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IRF7341GTRPBF IRF7341GTRPBF INFINEON TECHNOLOGIES irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7341TRPBFXTMA1 IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.65 EUR
83+1.04 EUR
126+0.68 EUR
500+0.54 EUR
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.33 EUR
25+3.51 EUR
28+3.05 EUR
100+2.52 EUR
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IRFP3077PBFXKMA1 IRFP3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.96 EUR
24+3.56 EUR
28+3.15 EUR
30+2.93 EUR
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AIGW50N65F5XKSA1 AIGW50N65F5.pdf
AIGW50N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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SPP21N50C3 SPx21N50C3.pdf
SPP21N50C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 0.19Ω
Mounting: THT
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 13.1A
Kind of channel: enhancement
Drain-source voltage: 560V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.34 EUR
22+3.92 EUR
25+3.44 EUR
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BTS428L2 BTS428L2.pdf
BTS428L2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.53 EUR
20+4.38 EUR
100+3.53 EUR
250+3.21 EUR
500+2.98 EUR
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BTS441TG BTS441TG.pdf
BTS441TG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 1331 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.34 EUR
18+4.82 EUR
100+4.27 EUR
Mindestbestellmenge: 14 Stücke
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IRFB3207ZGPBF irfb3207zgpbf.pdf
IRFB3207ZGPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3207ZPBF description irfs3207zpbf.pdf
IRFB3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.75 EUR
25+3.44 EUR
28+3.09 EUR
50+2.23 EUR
Mindestbestellmenge: 23 Stücke
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BSS138WH6327XTSA1 BSS138WH6327XTSA1.pdf
BSS138WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Produkt ist nicht verfügbar
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BSS138WH6433XTMA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.12A
Technology: SIPMOS®
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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IRFB4020PBF irfb4020pbf.pdf
IRFB4020PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
37+2.33 EUR
47+1.83 EUR
53+1.62 EUR
72+1.19 EUR
Mindestbestellmenge: 37 Stücke
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IRS2184PBF irs2184.pdf
IRS2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 720ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 290ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: THT
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
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FM31256-GTR FM3164_31256-DTE.pdf
FM31256-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO14
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Clock frequency: 1MHz
Memory: 256kb FRAM
Kind of interface: serial
Memory organisation: 32kx8bit
Case: SO14
Interface: I2C
Kind of memory: FRAM
Mounting: SMD
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.29 EUR
10+16.7 EUR
Mindestbestellmenge: 5 Stücke
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AIKW20N60CTXKSA1 AIKW20N60CT.pdf
AIKW20N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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BCR185WH6327 BCR185.pdf
BCR185WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 200MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
769+0.11 EUR
Mindestbestellmenge: 769 Stücke
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AIGW50N65H5XKSA1 AIGW50N65H5.pdf
AIGW50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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AIKP20N60CTAKSA1 AIKP20N60CT.pdf
AIKP20N60CTAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.95 EUR
17+5.27 EUR
18+4.74 EUR
50+4.4 EUR
250+4.39 EUR
Mindestbestellmenge: 15 Stücke
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AIKB20N60CTATMA1 AIKB20N60CT.pdf
AIKB20N60CTATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IKQ120N60TXKSA1 IKQ120N60T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT343
Current gain: 70...140
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
154+0.55 EUR
Mindestbestellmenge: 154 Stücke
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BFP196WH6327 BFP196WH6327-dte.pdf
BFP196WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Kind of package: reel; tape
Power dissipation: 0.7W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT343
Frequency: 5GHz
Collector current: 0.15A
Mounting: SMD
Collector-emitter voltage: 20V
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
192+0.44 EUR
309+0.27 EUR
382+0.23 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 148 Stücke
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BSS209PWH6327XTSA1 BSS209PW.pdf
BSS209PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
On-state resistance: 0.55Ω
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -0.63A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 3004 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
327+0.26 EUR
470+0.18 EUR
552+0.15 EUR
771+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
Mindestbestellmenge: 239 Stücke
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BSP171PH6327XTSA1 BSP171PH6327XTSA1-dte.pdf
BSP171PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
On-state resistance: 0.3Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -1.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.45 EUR
91+0.94 EUR
137+0.62 EUR
200+0.56 EUR
250+0.54 EUR
500+0.48 EUR
Mindestbestellmenge: 59 Stücke
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1.pdf
BSS816NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Case: SOT323
On-state resistance: 0.24Ω
Mounting: SMD
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
296+0.29 EUR
430+0.2 EUR
509+0.17 EUR
738+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 209 Stücke
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BAT1704WH6327XTSA1 BAT1704E6327HTSA1.pdf
BAT1704WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Max. forward voltage: 0.6V
Power dissipation: 0.15W
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
Mindestbestellmenge: 132 Stücke
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1-dte.pdf
BSS223PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -0.39A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
388+0.21 EUR
561+0.15 EUR
659+0.13 EUR
807+0.11 EUR
935+0.092 EUR
1053+0.081 EUR
Mindestbestellmenge: 264 Stücke
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IRFB7446PBF IRFB7446PBF.pdf
IRFB7446PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.06 EUR
70+1.23 EUR
88+0.98 EUR
100+0.88 EUR
Mindestbestellmenge: 42 Stücke
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IRF7832TRPBF description irf7832pbf.pdf
IRF7832TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3352 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
44+1.98 EUR
64+1.34 EUR
100+0.92 EUR
250+0.82 EUR
Mindestbestellmenge: 44 Stücke
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BSP135H6327XTSA1 BSP135H6327XTSA1.pdf
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 60Ω
auf Bestellung 1612 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.06 EUR
62+1.38 EUR
79+1.08 EUR
100+0.98 EUR
200+0.88 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 42 Stücke
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IRS2101SPBF description irs2101pbf.pdf
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Power: 625mW
Turn-off time: 185ns
Number of channels: 2
Part status: Not recommended for new designs
Topology: MOSFET half-bridge
Output current: -600...290mA
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
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63+1.36 EUR
65+1.31 EUR
Mindestbestellmenge: 63 Stücke
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BAT1705WH6327XTSA1 BAT1704E6327HTSA1.pdf
BAT1705WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Max. forward voltage: 0.6V
Power dissipation: 0.15W
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
516+0.17 EUR
Mindestbestellmenge: 516 Stücke
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BAT6405WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Max. forward voltage: 0.75V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.8A
auf Bestellung 1575 Stücke:
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AnzahlPrivatkunde
358+0.24 EUR
463+0.18 EUR
511+0.17 EUR
705+0.12 EUR
834+0.1 EUR
1000+0.095 EUR
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BTS6143D description BTS6143D.pdf
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2207 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.61 EUR
28+3.06 EUR
30+2.89 EUR
50+2.76 EUR
100+2.62 EUR
250+2.45 EUR
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11.pdf
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 50A
Case: AG-EASY1BM-2
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Type of semiconductor module: MOSFET transistor
Technology: CoolSiC™; SiC
Mechanical mounting: screw
Electrical mounting: Press-Fit
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
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1+89.04 EUR
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IRS2104SPBF irs2104.pdf
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 185ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
auf Bestellung 94 Stücke:
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42+2.06 EUR
44+1.94 EUR
50+1.7 EUR
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BSS84PH6327XTSA2 BSS84P.pdf
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1526 Stücke:
Lieferzeit 14-21 Tag (e)
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250+0.35 EUR
355+0.24 EUR
527+0.17 EUR
623+0.13 EUR
889+0.096 EUR
1025+0.083 EUR
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BAT6404WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 1264 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
325+0.26 EUR
454+0.19 EUR
521+0.17 EUR
694+0.12 EUR
1000+0.11 EUR
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BAT6406WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Max. forward voltage: 0.75V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.8A
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
410+0.2 EUR
562+0.15 EUR
642+0.13 EUR
848+0.1 EUR
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Voltage class: 200V
Type of integrated circuit: driver
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
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34+2.55 EUR
40+2.17 EUR
42+2.05 EUR
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BAS7004WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7004WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.1A
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
235+0.36 EUR
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IRS2184STRPBF irs2184.pdf
IRS2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 720ns
Power: 625mW
Kind of package: reel; tape
Case: SO8
Turn-off time: 290ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
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FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TT210N12KOF TT210N12KOF.pdf
TT210N12KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
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1+85.08 EUR
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Power: 625mW
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 724 Stücke:
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54+1.58 EUR
74+1.15 EUR
82+1.04 EUR
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BCR400WH6327XTSA1 BCR400W.pdf
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Output current: 10mA
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Power: 0.33W
Case: SOT343
Mounting: SMD
Supply voltage: 1.6...18V DC
auf Bestellung 2866 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
447+0.19 EUR
491+0.18 EUR
511+0.17 EUR
538+0.15 EUR
Mindestbestellmenge: 313 Stücke
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IRS21844STRPBF infineon-irs2186-datasheet-en.pdf
IRS21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Power: 1W
Turn-off time: 290ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
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32+2.69 EUR
38+2.28 EUR
41+2.07 EUR
45+1.93 EUR
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TLD1120ELXUMA1 TLD1120EL.pdf
TLD1120ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
auf Bestellung 1859 Stücke:
Lieferzeit 14-21 Tag (e)
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76+1.12 EUR
91+0.94 EUR
102+0.84 EUR
103+0.83 EUR
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BTS724G BTS724G.pdf
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
On-state resistance: 22.5mΩ
Mounting: SMD
Supply voltage: 5.5...40V DC
Output current: 3.3...7.3A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO20
Kind of integrated circuit: high-side
Number of channels: 4
auf Bestellung 1296 Stücke:
Lieferzeit 14-21 Tag (e)
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10+8.62 EUR
13+6.91 EUR
15+5.95 EUR
25+4.91 EUR
50+4.43 EUR
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ITS4141NHUMA1 ITS4141N.pdf
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 2297 Stücke:
Lieferzeit 14-21 Tag (e)
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36+2.38 EUR
49+1.75 EUR
54+1.59 EUR
55+1.55 EUR
100+1.48 EUR
250+1.45 EUR
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BAS4007WH6327XTSA1 BAS4004E6327HTSA1.pdf
BAS4007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Case: SOT343
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Type of diode: Schottky switching
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
71+1.19 EUR
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ITS5215L ITS5215L.pdf
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.68 EUR
26+3.3 EUR
30+2.84 EUR
34+2.53 EUR
50+2.45 EUR
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IKD04N60RFATMA1 IKD04N60RF.pdf
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
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12+7.39 EUR
18+4.88 EUR
25+4.27 EUR
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IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
IRFP4668PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.21 EUR
16+5.66 EUR
18+4.83 EUR
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IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
IRF7103TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.45 EUR
93+0.92 EUR
143+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 59 Stücke
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IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7341TRPBFXTMA1 infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
IRF7341TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.65 EUR
83+1.04 EUR
126+0.68 EUR
500+0.54 EUR
Mindestbestellmenge: 52 Stücke
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IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.33 EUR
25+3.51 EUR
28+3.05 EUR
100+2.52 EUR
Mindestbestellmenge: 16 Stücke
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IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
IRFP3077PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.96 EUR
24+3.56 EUR
28+3.15 EUR
30+2.93 EUR
Mindestbestellmenge: 22 Stücke
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