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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
736+0.12 EUR
782+0.11 EUR
855+0.1 EUR
906+0.094 EUR
1009+0.084 EUR
Mindestbestellmenge: 500 Stücke
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES BSS127H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 500Ω
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
222+0.38 EUR
313+0.27 EUR
363+0.24 EUR
511+0.17 EUR
Mindestbestellmenge: 152 Stücke
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BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES BAS16SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4341 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
455+0.19 EUR
491+0.18 EUR
511+0.17 EUR
532+0.15 EUR
Mindestbestellmenge: 417 Stücke
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BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 5634 Stücke:
Lieferzeit 14-21 Tag (e)
3049+0.027 EUR
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
481+0.18 EUR
596+0.14 EUR
676+0.13 EUR
Mindestbestellmenge: 481 Stücke
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SMBTA42E6327HTSA1 SMBTA42E6327HTSA1 INFINEON TECHNOLOGIES SMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 6128 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.6 EUR
182+0.46 EUR
211+0.4 EUR
304+0.29 EUR
353+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 143 Stücke
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BC856UE6327 BC856UE6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.2 EUR
521+0.17 EUR
589+0.14 EUR
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BC817UPNE6327HTSA1 BC817UPNE6327HTSA1 INFINEON TECHNOLOGIES BC817UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
239+0.36 EUR
345+0.25 EUR
500+0.2 EUR
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IRLML9303TRPBF IRLML9303TRPBF INFINEON TECHNOLOGIES irlml9303pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1625 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
317+0.27 EUR
481+0.18 EUR
569+0.15 EUR
667+0.13 EUR
705+0.12 EUR
807+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 200 Stücke
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BCP5616H6327XTSA1 BCP5616H6327XTSA1 INFINEON TECHNOLOGIES BCP5616H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BCX5610H6327XTSA1 BCX5610H6327XTSA1 INFINEON TECHNOLOGIES BCX56H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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BCX56H6327XTSA1 BCX56H6327XTSA1 INFINEON TECHNOLOGIES BCX56H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IR2132JPBF IR2132JPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Power: 2W
Turn-off time: 475ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.6 EUR
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FM24C04B-G FM24C04B-G INFINEON TECHNOLOGIES FM24C04B-G.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 506 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.92 EUR
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FM24C04B-GTR FM24C04B-GTR INFINEON TECHNOLOGIES Infineon-FM24C04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec967c841cc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.3 EUR
27+3.17 EUR
28+3.15 EUR
Mindestbestellmenge: 26 Stücke
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SPW20N60S5 SPW20N60S5 INFINEON TECHNOLOGIES SPW20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.45 EUR
15+5.81 EUR
30+5.12 EUR
120+4.62 EUR
Mindestbestellmenge: 14 Stücke
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IRLZ34NPBF IRLZ34NPBF INFINEON TECHNOLOGIES irlz34n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.7nC
Features of semiconductor devices: logic level
Kind of package: tube
auf Bestellung 4477 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.82 EUR
87+0.98 EUR
104+0.82 EUR
113+0.75 EUR
250+0.68 EUR
500+0.63 EUR
1000+0.6 EUR
2000+0.56 EUR
Mindestbestellmenge: 47 Stücke
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IRLZ34NSTRLPBF IRLZ34NSTRLPBF INFINEON TECHNOLOGIES irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRFZ46NLPBF IRFZ46NLPBF INFINEON TECHNOLOGIES irfz46ns.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 48nC
Technology: HEXFET®
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.74 EUR
54+1.58 EUR
65+1.31 EUR
72+1.19 EUR
Mindestbestellmenge: 50 Stücke
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IRFZ46NPBF IRFZ46NPBF INFINEON TECHNOLOGIES irfz46n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 48nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.9 EUR
68+1.26 EUR
79+1.07 EUR
Mindestbestellmenge: 45 Stücke
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FM24C64B-G FM24C64B-G INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.34 EUR
Mindestbestellmenge: 14 Stücke
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BTS4140N BTS4140N INFINEON TECHNOLOGIES BTS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
On-state resistance: 1Ω
Mounting: SMD
Supply voltage: 4.9...60V DC
Output current: 0.2A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SOT223-3
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.81 EUR
53+1.62 EUR
60+1.43 EUR
100+1.3 EUR
500+1.26 EUR
Mindestbestellmenge: 48 Stücke
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IRFB3006PBF IRFB3006PBF INFINEON TECHNOLOGIES irfb3006pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 IM69D120V01XTSA1 INFINEON TECHNOLOGIES IM69D120.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130V01XTSA1 INFINEON TECHNOLOGIES IM69D130.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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SPA15N60C3XKSA1 SPA15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.47 EUR
Mindestbestellmenge: 19 Stücke
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AIHD15N60RATMA1 AIHD15N60RATMA1 INFINEON TECHNOLOGIES AIHD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 26ns
Turn-off time: 319ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BTS4142N BTS4142N INFINEON TECHNOLOGIES BTS4142N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 12...45V DC
Output current: 1.4A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SOT223-3
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.36 EUR
28+3.09 EUR
40+2.62 EUR
80+2.42 EUR
100+2.33 EUR
Mindestbestellmenge: 20 Stücke
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES IHW30N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.62 EUR
29+3.01 EUR
30+2.86 EUR
32+2.69 EUR
60+2.61 EUR
Mindestbestellmenge: 16 Stücke
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IPB027N10N3GATMA1 IPB027N10N3GATMA1 INFINEON TECHNOLOGIES IPB027N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 INFINEON TECHNOLOGIES IPB027N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IRLR3636TRPBF IRLR3636TRPBF INFINEON TECHNOLOGIES IRLR3636TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 407 Stücke:
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29+2.98 EUR
35+2.49 EUR
39+2.19 EUR
48+1.78 EUR
56+1.54 EUR
100+1.32 EUR
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BTS6163D BTS6163D INFINEON TECHNOLOGIES BTS6163D-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1031 Stücke:
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12+7.41 EUR
17+5.26 EUR
100+4.43 EUR
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BTS716GXUMA1 BTS716GXUMA1 INFINEON TECHNOLOGIES BTS716G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Supply voltage: 5.5...40V DC
Output current: 2.6...5.3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 3.6W
Technology: Classic PROFET
Turn-on time: 270µs
Case: SO20
Turn-off time: 0.25ms
Kind of integrated circuit: high-side
Number of channels: 4
On-state resistance: 35mΩ
Mounting: SMD
auf Bestellung 982 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.09 EUR
19+4.64 EUR
25+4.27 EUR
50+4.12 EUR
100+4.05 EUR
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IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 401ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 69ns
auf Bestellung 41 Stücke:
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10+9.03 EUR
11+7.87 EUR
12+7.33 EUR
15+7.13 EUR
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IRFR3910TRPBF IRFR3910TRPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.69 EUR
61+1.4 EUR
70+1.21 EUR
99+0.87 EUR
112+0.76 EUR
250+0.67 EUR
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BSS123NH6433XTMA1 BSS123NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of channel: enhancement
auf Bestellung 4773 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
414+0.2 EUR
592+0.14 EUR
698+0.12 EUR
860+0.099 EUR
981+0.087 EUR
1060+0.08 EUR
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FM24CL04B-G FM24CL04B-G INFINEON TECHNOLOGIES Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.65 EUR
17+5.07 EUR
25+4.83 EUR
97+4.26 EUR
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FM24CL16B-GTR FM24CL16B-GTR INFINEON TECHNOLOGIES FM24CL16B-GTR.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BTS462T BTS462T INFINEON TECHNOLOGIES BTS462T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1385 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.39 EUR
35+2.5 EUR
36+2.38 EUR
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Mounting: SMD
Power dissipation: 0.1W
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2639 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.61 EUR
168+0.51 EUR
190+0.45 EUR
222+0.38 EUR
268+0.32 EUR
286+0.3 EUR
Mindestbestellmenge: 139 Stücke
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES BTS711L1.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.37 EUR
16+5.63 EUR
25+5.21 EUR
50+5.09 EUR
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BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.63nC
Kind of channel: enhancement
auf Bestellung 5789 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
569+0.15 EUR
779+0.11 EUR
881+0.096 EUR
1134+0.075 EUR
1266+0.067 EUR
3000+0.057 EUR
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES BSS123NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of channel: enhancement
auf Bestellung 12978 Stücke:
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385+0.23 EUR
447+0.19 EUR
496+0.17 EUR
729+0.12 EUR
916+0.093 EUR
1000+0.086 EUR
3000+0.075 EUR
6000+0.069 EUR
9000+0.067 EUR
Mindestbestellmenge: 385 Stücke
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AIHD10N60RFATMA1 AIHD10N60RFATMA1 INFINEON TECHNOLOGIES AIHD10N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES irs2109.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Output current: -600...290mA
Voltage class: 600V
Turn-on time: 850ns
Power: 1.6W
Kind of package: tube
Turn-off time: 235ns
Topology: MOSFET half-bridge
auf Bestellung 96 Stücke:
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46+1.89 EUR
48+1.81 EUR
49+1.77 EUR
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IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Power: 625mW
Turn-off time: 235ns
auf Bestellung 27 Stücke:
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27+3.15 EUR
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IRFR120NTRPBF IRFR120NTRPBF INFINEON TECHNOLOGIES irfr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2308 Stücke:
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47+1.82 EUR
74+1.17 EUR
111+0.77 EUR
250+0.68 EUR
500+0.62 EUR
1000+0.56 EUR
2000+0.51 EUR
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IRFR6215TRPBF IRFR6215TRPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
auf Bestellung 1549 Stücke:
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34+2.52 EUR
47+1.83 EUR
57+1.51 EUR
66+1.3 EUR
100+1.12 EUR
250+0.95 EUR
500+0.86 EUR
1000+0.77 EUR
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BC856SH6327 BC856SH6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1151 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
365+0.24 EUR
557+0.15 EUR
746+0.11 EUR
1000+0.1 EUR
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES BSP170PH6327XTSA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
On-state resistance: 0.3Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -1.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 1487 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.46 EUR
93+0.93 EUR
124+0.69 EUR
139+0.61 EUR
200+0.55 EUR
500+0.48 EUR
1000+0.43 EUR
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IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES irl7833pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IPD90N04S405ATMA1 IPD90N04S405ATMA1 INFINEON TECHNOLOGIES IPD90N04S405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES IPD068P03L3GATMA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Drain current: -70A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 11mΩ
Mounting: SMD
Power dissipation: 100W
Polarisation: unipolar
auf Bestellung 2235 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.94 EUR
103+0.83 EUR
110+0.77 EUR
117+0.74 EUR
121+0.7 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 91 Stücke
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SPA07N60C3 SPA07N60C3 INFINEON TECHNOLOGIES SPA07N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
40+2.14 EUR
51+1.69 EUR
66+1.3 EUR
69+1.23 EUR
Mindestbestellmenge: 40 Stücke
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SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES SPx07N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.27 EUR
76+1.12 EUR
84+1.02 EUR
90+0.95 EUR
Mindestbestellmenge: 67 Stücke
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AIGW40N65F5XKSA1 AIGW40N65F5XKSA1 INFINEON TECHNOLOGIES AIGW40N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.2 EUR
Mindestbestellmenge: 14 Stücke
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 INFINEON TECHNOLOGIES AIGW40N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
10+9.1 EUR
11+8.39 EUR
13+6.89 EUR
Mindestbestellmenge: 10 Stücke
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AIKW40N65DF5XKSA1 AIKW40N65DF5XKSA1 INFINEON TECHNOLOGIES AIKW40N65DF5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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AIKW40N65DH5XKSA1 AIKW40N65DH5XKSA1 INFINEON TECHNOLOGIES AIKW40N65DH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
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BAT6404E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
736+0.12 EUR
782+0.11 EUR
855+0.1 EUR
906+0.094 EUR
1009+0.084 EUR
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BSS127H6327XTSA2 BSS127H6327XTSA2.pdf
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 500Ω
auf Bestellung 715 Stücke:
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152+0.56 EUR
222+0.38 EUR
313+0.27 EUR
363+0.24 EUR
511+0.17 EUR
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BAS16UE6327HTSA1 BAS16SH6327XTSA1.pdf
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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417+0.2 EUR
455+0.19 EUR
491+0.18 EUR
511+0.17 EUR
532+0.15 EUR
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BAV70UE6327HTSA1 BAV70E6327HTSA1.pdf
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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3049+0.027 EUR
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BAV99UE6327HTSA1 BAV99SH6327XTSA1.pdf
BAV99UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2300 Stücke:
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481+0.18 EUR
596+0.14 EUR
676+0.13 EUR
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SMBTA42E6327HTSA1 SMBTA42.pdf
SMBTA42E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 6128 Stücke:
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143+0.6 EUR
182+0.46 EUR
211+0.4 EUR
304+0.29 EUR
353+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
3000+0.13 EUR
6000+0.12 EUR
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BC856UE6327 BC856UE6327.pdf
BC856UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 927 Stücke:
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410+0.2 EUR
521+0.17 EUR
589+0.14 EUR
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BC817UPNE6327HTSA1 BC817UPNE6327.pdf
BC817UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 990 Stücke:
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162+0.52 EUR
239+0.36 EUR
345+0.25 EUR
500+0.2 EUR
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IRLML9303TRPBF irlml9303pbf.pdf
IRLML9303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1625 Stücke:
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200+0.43 EUR
317+0.27 EUR
481+0.18 EUR
569+0.15 EUR
667+0.13 EUR
705+0.12 EUR
807+0.11 EUR
1000+0.1 EUR
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BCP5616H6327XTSA1 BCP5616H6327XTSA1.pdf
BCP5616H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BCX5610H6327XTSA1 BCX56H6327XTSA1.pdf
BCX5610H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BCX56H6327XTSA1 BCX56H6327XTSA1.pdf
BCX56H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IR2132JPBF description IR2132JPBF.pdf
IR2132JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Power: 2W
Turn-off time: 475ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
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13+6.6 EUR
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FM24C04B-G FM24C04B-G.pdf
FM24C04B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 506 Stücke:
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30+2.92 EUR
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FM24C04B-GTR Infineon-FM24C04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec967c841cc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C04B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 2490 Stücke:
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26+3.3 EUR
27+3.17 EUR
28+3.15 EUR
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SPW20N60S5 description SPW20N60S5.pdf
SPW20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
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14+6.45 EUR
15+5.81 EUR
30+5.12 EUR
120+4.62 EUR
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IRLZ34NPBF description irlz34n.pdf
IRLZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.7nC
Features of semiconductor devices: logic level
Kind of package: tube
auf Bestellung 4477 Stücke:
Lieferzeit 14-21 Tag (e)
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47+1.82 EUR
87+0.98 EUR
104+0.82 EUR
113+0.75 EUR
250+0.68 EUR
500+0.63 EUR
1000+0.6 EUR
2000+0.56 EUR
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IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
IRLZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ46NLPBF description irfz46ns.pdf
IRFZ46NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 48nC
Technology: HEXFET®
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
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50+1.74 EUR
54+1.58 EUR
65+1.31 EUR
72+1.19 EUR
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IRFZ46NPBF description irfz46n.pdf
IRFZ46NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 48nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
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45+1.9 EUR
68+1.26 EUR
79+1.07 EUR
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FM24C64B-G Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
FM24C64B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
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14+6.34 EUR
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BTS4140N BTS4140N.pdf
BTS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
On-state resistance: 1Ω
Mounting: SMD
Supply voltage: 4.9...60V DC
Output current: 0.2A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SOT223-3
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
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48+1.81 EUR
53+1.62 EUR
60+1.43 EUR
100+1.3 EUR
500+1.26 EUR
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IRFB3006PBF description irfb3006pbf.pdf
IRFB3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 IM69D120.pdf
IM69D120V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130.pdf
IM69D130V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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SPA15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPA15N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.47 EUR
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AIHD15N60RATMA1 AIHD15N60R.pdf
AIHD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 26ns
Turn-off time: 319ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BTS4142N BTS4142N.pdf
BTS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 12...45V DC
Output current: 1.4A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SOT223-3
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.36 EUR
28+3.09 EUR
40+2.62 EUR
80+2.42 EUR
100+2.33 EUR
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IHW30N135R5XKSA1 IHW30N135R5.pdf
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.62 EUR
29+3.01 EUR
30+2.86 EUR
32+2.69 EUR
60+2.61 EUR
Mindestbestellmenge: 16 Stücke
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IPB027N10N3GATMA1 IPB027N10N3G-DTE.pdf
IPB027N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5-dte.pdf
IPB027N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRLR3636TRPBF IRLR3636TRPBF.pdf
IRLR3636TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+2.98 EUR
35+2.49 EUR
39+2.19 EUR
48+1.78 EUR
56+1.54 EUR
100+1.32 EUR
Mindestbestellmenge: 29 Stücke
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BTS6163D BTS6163D-DTE.pdf
BTS6163D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1031 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.41 EUR
17+5.26 EUR
100+4.43 EUR
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BTS716GXUMA1 BTS716G.pdf
BTS716GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Supply voltage: 5.5...40V DC
Output current: 2.6...5.3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 3.6W
Technology: Classic PROFET
Turn-on time: 270µs
Case: SO20
Turn-off time: 0.25ms
Kind of integrated circuit: high-side
Number of channels: 4
On-state resistance: 35mΩ
Mounting: SMD
auf Bestellung 982 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.09 EUR
19+4.64 EUR
25+4.27 EUR
50+4.12 EUR
100+4.05 EUR
Mindestbestellmenge: 14 Stücke
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IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 401ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 69ns
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.03 EUR
11+7.87 EUR
12+7.33 EUR
15+7.13 EUR
Mindestbestellmenge: 10 Stücke
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IRFR3910TRPBF irfr3910pbf.pdf
IRFR3910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
51+1.69 EUR
61+1.4 EUR
70+1.21 EUR
99+0.87 EUR
112+0.76 EUR
250+0.67 EUR
Mindestbestellmenge: 51 Stücke
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BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of channel: enhancement
auf Bestellung 4773 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
414+0.2 EUR
592+0.14 EUR
698+0.12 EUR
860+0.099 EUR
981+0.087 EUR
1060+0.08 EUR
Mindestbestellmenge: 313 Stücke
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FM24CL04B-G Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL04B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.65 EUR
17+5.07 EUR
25+4.83 EUR
97+4.26 EUR
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FM24CL16B-GTR FM24CL16B-GTR.pdf
FM24CL16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BTS462T BTS462T.pdf
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1385 Stücke:
Lieferzeit 14-21 Tag (e)
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26+3.39 EUR
35+2.5 EUR
36+2.38 EUR
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BAT1504WH6327XTSA1 BAT1503WE6327HTSA1.pdf
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Mounting: SMD
Power dissipation: 0.1W
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2639 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
168+0.51 EUR
190+0.45 EUR
222+0.38 EUR
268+0.32 EUR
286+0.3 EUR
Mindestbestellmenge: 139 Stücke
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BTS711L1 description BTS711L1.pdf
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.37 EUR
16+5.63 EUR
25+5.21 EUR
50+5.09 EUR
Mindestbestellmenge: 12 Stücke
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.63nC
Kind of channel: enhancement
auf Bestellung 5789 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
569+0.15 EUR
779+0.11 EUR
881+0.096 EUR
1134+0.075 EUR
1266+0.067 EUR
3000+0.057 EUR
Mindestbestellmenge: 455 Stücke
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BSS123NH6327XTSA1 BSS123NH6327XTSA1.pdf
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of channel: enhancement
auf Bestellung 12978 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
447+0.19 EUR
496+0.17 EUR
729+0.12 EUR
916+0.093 EUR
1000+0.086 EUR
3000+0.075 EUR
6000+0.069 EUR
9000+0.067 EUR
Mindestbestellmenge: 385 Stücke
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AIHD10N60RFATMA1 AIHD10N60RF.pdf
AIHD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS21094PBF description irs2109.pdf
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Output current: -600...290mA
Voltage class: 600V
Turn-on time: 850ns
Power: 1.6W
Kind of package: tube
Turn-off time: 235ns
Topology: MOSFET half-bridge
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
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46+1.89 EUR
48+1.81 EUR
49+1.77 EUR
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IRS2108SPBF irs2108.pdf
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Power: 625mW
Turn-off time: 235ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.15 EUR
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IRFR120NTRPBF description irfr120npbf.pdf
IRFR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2308 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.82 EUR
74+1.17 EUR
111+0.77 EUR
250+0.68 EUR
500+0.62 EUR
1000+0.56 EUR
2000+0.51 EUR
Mindestbestellmenge: 47 Stücke
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IRFR6215TRPBF irfr6215pbf.pdf
IRFR6215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.52 EUR
47+1.83 EUR
57+1.51 EUR
66+1.3 EUR
100+1.12 EUR
250+0.95 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 34 Stücke
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BC856SH6327 BC856UE6327.pdf
BC856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1151 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
365+0.24 EUR
557+0.15 EUR
746+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 278 Stücke
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BSP170PH6327XTSA1 BSP170PH6327XTSA1-DTE.PDF
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
On-state resistance: 0.3Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -1.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 1487 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.46 EUR
93+0.93 EUR
124+0.69 EUR
139+0.61 EUR
200+0.55 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 59 Stücke
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IRL7833STRLPBF irl7833pbf.pdf
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPD90N04S405ATMA1 IPD90N04S405.pdf
IPD90N04S405ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1.pdf
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Drain current: -70A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 11mΩ
Mounting: SMD
Power dissipation: 100W
Polarisation: unipolar
auf Bestellung 2235 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
91+0.94 EUR
103+0.83 EUR
110+0.77 EUR
117+0.74 EUR
121+0.7 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 91 Stücke
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SPA07N60C3 description SPA07N60C3.pdf
SPA07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.14 EUR
51+1.69 EUR
66+1.3 EUR
69+1.23 EUR
Mindestbestellmenge: 40 Stücke
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SPP07N60C3 SPx07N60C3.pdf
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
67+1.27 EUR
76+1.12 EUR
84+1.02 EUR
90+0.95 EUR
Mindestbestellmenge: 67 Stücke
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AIGW40N65F5XKSA1 AIGW40N65F5.pdf
AIGW40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.2 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AIGW40N65H5XKSA1 AIGW40N65H5.pdf
AIGW40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.1 EUR
11+8.39 EUR
13+6.89 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AIKW40N65DF5XKSA1 AIKW40N65DF5.pdf
AIKW40N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW40N65DH5XKSA1 AIKW40N65DH5.pdf
AIKW40N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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