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PVG612ASPBF PVG612ASPBF INFINEON TECHNOLOGIES PVG612ASPBF.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: PVG612
Relay variant: MOSFET
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 3.5ms
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Max. operating current: 4A
On-state resistance: 0.1Ω
Type of relay: solid state
auf Bestellung 183 Stücke:
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5+24.62 EUR
25+21.54 EUR
100+18.48 EUR
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PVG612S PVG612S INFINEON TECHNOLOGIES PVG612S.PDF description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 416 Stücke:
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9+9.62 EUR
10+8.51 EUR
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BFR93AE6327 BFR93AE6327 INFINEON TECHNOLOGIES BFR93AE6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Frequency: 6GHz
Kind of package: reel; tape
auf Bestellung 10057 Stücke:
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228+0.37 EUR
272+0.31 EUR
309+0.27 EUR
365+0.24 EUR
410+0.2 EUR
447+0.19 EUR
491+0.18 EUR
511+0.17 EUR
3000+0.15 EUR
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BFR93AWH6327 BFR93AWH6327 INFINEON TECHNOLOGIES BFR93AWH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Frequency: 6GHz
Kind of package: reel; tape
auf Bestellung 2355 Stücke:
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376+0.23 EUR
451+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF INFINEON TECHNOLOGIES IRFZ44ZSTRRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
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IRLR024NTRPBF IRLR024NTRPBF INFINEON TECHNOLOGIES irlr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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61+1.42 EUR
77+1.11 EUR
92+0.93 EUR
121+0.7 EUR
148+0.58 EUR
176+0.49 EUR
185+0.46 EUR
500+0.37 EUR
1000+0.35 EUR
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IRLML2030TRPBF IRLML2030TRPBF INFINEON TECHNOLOGIES irlml2030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 329 Stücke:
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167+0.51 EUR
200+0.43 EUR
230+0.37 EUR
329+0.25 EUR
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IRLML2502TRPBF IRLML2502TRPBF INFINEON TECHNOLOGIES IRLML2502TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 29578 Stücke:
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105+0.82 EUR
159+0.54 EUR
236+0.36 EUR
278+0.31 EUR
348+0.25 EUR
500+0.21 EUR
1000+0.18 EUR
3000+0.14 EUR
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IRF2807PBF IRF2807PBF INFINEON TECHNOLOGIES irf2807.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 13mΩ
Gate charge: 106.7nC
Gate-source voltage: ±20V
auf Bestellung 341 Stücke:
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29+2.94 EUR
47+1.82 EUR
54+1.58 EUR
60+1.43 EUR
100+1.31 EUR
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IRF2807STRLPBF IRF2807STRLPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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27+3.15 EUR
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IRF2807STRRPBF IRF2807STRRPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF2807ZPBF IRF2807ZPBF INFINEON TECHNOLOGIES irf2807z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Power: 1W
Turn-off time: 270ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 250 Stücke:
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18+4.8 EUR
23+3.76 EUR
26+3.3 EUR
28+3.09 EUR
55+2.93 EUR
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IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
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IR2184PBF IR2184PBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Power: 1W
Turn-off time: 270ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 49 Stücke:
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21+4.08 EUR
28+3.13 EUR
30+2.92 EUR
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IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 37 Stücke:
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18+4.82 EUR
19+4.59 EUR
20+4.39 EUR
24+3.61 EUR
29+3.03 EUR
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IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Power: 625mW
Turn-off time: 270ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 2139 Stücke:
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30+2.84 EUR
34+2.57 EUR
39+2.21 EUR
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BAT60AE6327HTSA1 BAT60AE6327HTSA1 INFINEON TECHNOLOGIES BAT60AE6327-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 6208 Stücke:
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209+0.4 EUR
264+0.32 EUR
296+0.29 EUR
417+0.2 EUR
506+0.17 EUR
1000+0.14 EUR
3000+0.11 EUR
6000+0.099 EUR
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BTS452R BTS452R INFINEON TECHNOLOGIES BTS452R-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Kind of output: N-Channel
Technology: Classic PROFET
Output voltage: 62V
Case: PG-TO252-5-11
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.2Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
auf Bestellung 2596 Stücke:
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40+2.13 EUR
42+2.05 EUR
100+1.86 EUR
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BAV70SH6327XTSA1 BAV70SH6327XTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2220 Stücke:
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511+0.17 EUR
828+0.1 EUR
930+0.092 EUR
1000+0.086 EUR
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BAV99SH6327XTSA1 BAV99SH6327XTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.25W
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IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES IRS2092.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 416 Stücke:
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31+2.82 EUR
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IRFP064NPBF IRFP064NPBF INFINEON TECHNOLOGIES irfp064n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 723 Stücke:
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22+4.01 EUR
29+3.03 EUR
35+2.5 EUR
38+2.25 EUR
44+1.95 EUR
51+1.69 EUR
100+1.51 EUR
125+1.46 EUR
250+1.38 EUR
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IRFP3206PBF IRFP3206PBF INFINEON TECHNOLOGIES irfp3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
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17+5.18 EUR
26+3.32 EUR
34+2.55 EUR
50+2.19 EUR
100+2.11 EUR
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IRF3415PBF IRF3415PBF INFINEON TECHNOLOGIES irf3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 42mΩ
Gate charge: 133.3nC
Gate-source voltage: ±20V
auf Bestellung 383 Stücke:
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33+2.58 EUR
45+1.93 EUR
57+1.51 EUR
100+1.34 EUR
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BCP5216H6327XTSA1 BCP5216H6327XTSA1 INFINEON TECHNOLOGIES BCP5216H6327XTSA1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Polarisation: bipolar
Frequency: 125MHz
Type of transistor: PNP
Collector current: 1A
Power dissipation: 2W
Produkt ist nicht verfügbar
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SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPB11N60C3ATMA1 INFINEON TECHNOLOGIES SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
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20+4.26 EUR
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SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES irfp4468pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Power dissipation: 520W
Gate charge: 360nC
Technology: HEXFET®
Gate-source voltage: ±20V
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IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES IRLML6402TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRF7416TRPBF IRF7416TRPBF INFINEON TECHNOLOGIES irf7416qpbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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73+1.17 EUR
110+0.77 EUR
250+0.67 EUR
500+0.61 EUR
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2000+0.52 EUR
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IRF5210PBF IRF5210PBF INFINEON TECHNOLOGIES irf5210.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 60mΩ
Gate charge: 0.12µC
Gate-source voltage: ±20V
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35+2.5 EUR
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50+1.99 EUR
100+1.81 EUR
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1000+1.42 EUR
1250+1.38 EUR
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IRF5210STRLPBF IRF5210STRLPBF INFINEON TECHNOLOGIES irf5210spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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20+4.36 EUR
24+3.57 EUR
27+3.18 EUR
31+2.76 EUR
100+2.28 EUR
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IRF5210STRRPBF IRF5210STRRPBF INFINEON TECHNOLOGIES irf5210spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR4427STRPBF IR4427STRPBF INFINEON TECHNOLOGIES IR4427PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
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IRLR2905TRPBF IRLR2905TRPBF INFINEON TECHNOLOGIES irlr2905pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1801 Stücke:
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38+2.3 EUR
85+1.01 EUR
90+0.95 EUR
96+0.89 EUR
97+0.88 EUR
103+0.83 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.68 EUR
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BAR81WH6327XTSA1 BAR81WH6327XTSA1 INFINEON TECHNOLOGIES BAR81.pdf Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOT343; single diode; 80ns; Ufmax: 1V
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOT343
Type of diode: switching
Reverse recovery time: 80ns
Mounting: SMD
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177+0.49 EUR
199+0.43 EUR
222+0.38 EUR
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BAS28WH6327XTSA1 BAS28WH6327XTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW
Kind of package: reel; tape
Power dissipation: 0.25W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT343
Type of diode: switching
Reverse recovery time: 4ns
Mounting: SMD
Max. forward voltage: 1.25V
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685+0.12 EUR
770+0.11 EUR
1000+0.099 EUR
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BC847CWH6327XTSA1 BC847CWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4962 Stücke:
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228+0.37 EUR
309+0.27 EUR
539+0.15 EUR
687+0.12 EUR
827+0.1 EUR
1000+0.086 EUR
2500+0.067 EUR
3000+0.063 EUR
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BC849CWH6327XTSA1 BC849CWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 420...800
Case: SOT323
Frequency: 250MHz
Collector current: 0.1A
Mounting: SMD
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BC858CWH6327 BC858CWH6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: PNP
Case: SOT323
Frequency: 250MHz
Collector current: 0.1A
Mounting: SMD
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BC860CWH6327 BC860CWH6327 INFINEON TECHNOLOGIES BC860CWH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.25W
Polarisation: bipolar
Case: SOT323
Frequency: 250MHz
auf Bestellung 1655 Stücke:
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1075+0.08 EUR
1215+0.07 EUR
1355+0.063 EUR
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BCR108WH6327 BCR108WH6327 INFINEON TECHNOLOGIES BCR108WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 170MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 2881 Stücke:
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385+0.23 EUR
496+0.17 EUR
571+0.15 EUR
705+0.12 EUR
861+0.099 EUR
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BCR116WH6327 BCR116WH6327 INFINEON TECHNOLOGIES BCR116.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector current: 0.1A
Mounting: SMD
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IRFB3077PBF IRFB3077PBF INFINEON TECHNOLOGIES irfb3077pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Power dissipation: 370W
Gate charge: 160nC
Technology: HEXFET®
Gate-source voltage: ±20V
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BAS2103WE6327HTSA1 BAS2103WE6327HTSA1 INFINEON TECHNOLOGIES BAS2103WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES SPA17N80C3-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 42W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3-FP
auf Bestellung 16 Stücke:
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES SPB17N80C3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: SMD
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Case: PG-TO263-3
auf Bestellung 192 Stücke:
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13+6.56 EUR
25+5.89 EUR
100+5.58 EUR
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES SPW17N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 257 Stücke:
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18+4.78 EUR
21+4.07 EUR
30+3.72 EUR
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IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES irf9540n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.117Ω
Gate charge: 64.7nC
Gate-source voltage: ±20V
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75+1.15 EUR
84+1.01 EUR
89+0.96 EUR
92+0.94 EUR
100+0.87 EUR
500+0.81 EUR
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IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFP1405PBF IRFP1405PBF INFINEON TECHNOLOGIES irfp1405pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 75 Stücke:
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32+2.68 EUR
35+2.45 EUR
38+2.28 EUR
42+2.05 EUR
50+1.9 EUR
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IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES irfp140n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 83 Stücke:
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27+3.2 EUR
47+1.82 EUR
59+1.45 EUR
61+1.42 EUR
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KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES KIT-XMC11-BOOT-001-DTE.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Connection: pin strips; USB B micro
Kind of architecture: Cortex M0
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Components: XMC1100
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES BSC150N03LDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES BSO150N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES BAT6804E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 8V; 0.13A; 150mW
Max. forward voltage: 0.5V
Power dissipation: 0.15W
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.7 EUR
138+0.62 EUR
152+0.56 EUR
198+0.43 EUR
217+0.39 EUR
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PVG612ASPBF PVG612ASPBF.pdf
PVG612ASPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: PVG612
Relay variant: MOSFET
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 3.5ms
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Max. operating current: 4A
On-state resistance: 0.1Ω
Type of relay: solid state
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PVG612S description PVG612S.PDF
PVG612S
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
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BFR93AE6327 BFR93AE6327-dte.pdf
BFR93AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Frequency: 6GHz
Kind of package: reel; tape
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228+0.37 EUR
272+0.31 EUR
309+0.27 EUR
365+0.24 EUR
410+0.2 EUR
447+0.19 EUR
491+0.18 EUR
511+0.17 EUR
3000+0.15 EUR
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BFR93AWH6327 BFR93AWH6327-dte.pdf
BFR93AWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Frequency: 6GHz
Kind of package: reel; tape
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264+0.32 EUR
376+0.23 EUR
451+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF.pdf
IRFZ44ZSTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024NTRPBF description irlr024npbf.pdf
IRLR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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61+1.42 EUR
77+1.11 EUR
92+0.93 EUR
121+0.7 EUR
148+0.58 EUR
176+0.49 EUR
185+0.46 EUR
500+0.37 EUR
1000+0.35 EUR
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IRLML2030TRPBF irlml2030pbf.pdf
IRLML2030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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167+0.51 EUR
200+0.43 EUR
230+0.37 EUR
329+0.25 EUR
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IRLML2502TRPBF IRLML2502TRPBF.pdf
IRLML2502TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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105+0.82 EUR
159+0.54 EUR
236+0.36 EUR
278+0.31 EUR
348+0.25 EUR
500+0.21 EUR
1000+0.18 EUR
3000+0.14 EUR
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IRF2807PBF irf2807.pdf
IRF2807PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 13mΩ
Gate charge: 106.7nC
Gate-source voltage: ±20V
auf Bestellung 341 Stücke:
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29+2.94 EUR
47+1.82 EUR
54+1.58 EUR
60+1.43 EUR
100+1.31 EUR
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IRF2807STRLPBF irf2807spbf.pdf
IRF2807STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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26+3.39 EUR
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IRF2807STRRPBF irf2807spbf.pdf
IRF2807STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2807ZPBF description irf2807z.pdf
IRF2807ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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IR21844SPBF description IR21844SPBF.pdf
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Power: 1W
Turn-off time: 270ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 250 Stücke:
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18+4.8 EUR
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26+3.3 EUR
28+3.09 EUR
55+2.93 EUR
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IR21844STRPBF IR21844SPBF.pdf
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
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IR2184PBF IR21844SPBF.pdf
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Power: 1W
Turn-off time: 270ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 49 Stücke:
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21+4.08 EUR
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IR2184SPBF description IR21844SPBF.pdf
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 37 Stücke:
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18+4.82 EUR
19+4.59 EUR
20+4.39 EUR
24+3.61 EUR
29+3.03 EUR
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IR2184STRPBF IR21844SPBF.pdf
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Power: 625mW
Turn-off time: 270ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2.3...1.9A
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 2139 Stücke:
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30+2.84 EUR
34+2.57 EUR
39+2.21 EUR
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BAT60AE6327HTSA1 BAT60AE6327-DTE.pdf
BAT60AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 6208 Stücke:
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209+0.4 EUR
264+0.32 EUR
296+0.29 EUR
417+0.2 EUR
506+0.17 EUR
1000+0.14 EUR
3000+0.11 EUR
6000+0.099 EUR
Mindestbestellmenge: 209 Stücke
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BTS452R BTS452R-DTE.pdf
BTS452R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Kind of output: N-Channel
Technology: Classic PROFET
Output voltage: 62V
Case: PG-TO252-5-11
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.2Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
auf Bestellung 2596 Stücke:
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40+2.13 EUR
42+2.05 EUR
100+1.86 EUR
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BAV70SH6327XTSA1 BAV70E6327HTSA1.pdf
BAV70SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2220 Stücke:
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511+0.17 EUR
828+0.1 EUR
930+0.092 EUR
1000+0.086 EUR
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BAV99SH6327XTSA1 BAV99SH6327XTSA1.pdf
BAV99SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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IRS2092STRPBF IRS2092.pdf
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 416 Stücke:
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31+2.82 EUR
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IRFP064NPBF irfp064n.pdf
IRFP064NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 723 Stücke:
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22+4.01 EUR
29+3.03 EUR
35+2.5 EUR
38+2.25 EUR
44+1.95 EUR
51+1.69 EUR
100+1.51 EUR
125+1.46 EUR
250+1.38 EUR
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IRFP3206PBF irfp3206pbf.pdf
IRFP3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
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17+5.18 EUR
26+3.32 EUR
34+2.55 EUR
50+2.19 EUR
100+2.11 EUR
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IRF3415PBF irf3415.pdf
IRF3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 42mΩ
Gate charge: 133.3nC
Gate-source voltage: ±20V
auf Bestellung 383 Stücke:
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33+2.58 EUR
45+1.93 EUR
57+1.51 EUR
100+1.34 EUR
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BCP5216H6327XTSA1 BCP5216H6327XTSA1.pdf
BCP5216H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Polarisation: bipolar
Frequency: 125MHz
Type of transistor: PNP
Collector current: 1A
Power dissipation: 2W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
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SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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5+17.02 EUR
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IRFP4468PBF irfp4468pbf.pdf
IRFP4468PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Power dissipation: 520W
Gate charge: 360nC
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRLML6402TRPBF IRLML6402TRPBF.pdf
IRLML6402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRF7416TRPBF irf7416qpbf.pdf
IRF7416TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3854 Stücke:
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48+1.78 EUR
73+1.17 EUR
110+0.77 EUR
250+0.67 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.52 EUR
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IRF5210PBF irf5210.pdf
IRF5210PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 60mΩ
Gate charge: 0.12µC
Gate-source voltage: ±20V
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23+3.75 EUR
35+2.5 EUR
40+2.18 EUR
50+1.99 EUR
100+1.81 EUR
500+1.51 EUR
1000+1.42 EUR
1250+1.38 EUR
2000+1.31 EUR
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IRF5210STRLPBF irf5210spbf.pdf
IRF5210STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 599 Stücke:
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20+4.36 EUR
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27+3.18 EUR
31+2.76 EUR
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500+2.11 EUR
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IRF5210STRRPBF irf5210spbf.pdf
IRF5210STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR4427STRPBF IR4427PBF.pdf
IR4427STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 2124 Stücke:
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38+2.25 EUR
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IRLR2905TRPBF description irlr2905pbf.pdf
IRLR2905TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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38+2.3 EUR
85+1.01 EUR
90+0.95 EUR
96+0.89 EUR
97+0.88 EUR
103+0.83 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.68 EUR
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BAR81WH6327XTSA1 BAR81.pdf
BAR81WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOT343; single diode; 80ns; Ufmax: 1V
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOT343
Type of diode: switching
Reverse recovery time: 80ns
Mounting: SMD
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69+1.24 EUR
177+0.49 EUR
199+0.43 EUR
222+0.38 EUR
500+0.36 EUR
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BAS28WH6327XTSA1 BAS28E6327HTSA1.pdf
BAS28WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW
Kind of package: reel; tape
Power dissipation: 0.25W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT343
Type of diode: switching
Reverse recovery time: 4ns
Mounting: SMD
Max. forward voltage: 1.25V
auf Bestellung 8934 Stücke:
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610+0.14 EUR
685+0.12 EUR
770+0.11 EUR
1000+0.099 EUR
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BC847CWH6327XTSA1 bc847_8_9_bc850.pdf
BC847CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4962 Stücke:
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228+0.37 EUR
309+0.27 EUR
539+0.15 EUR
687+0.12 EUR
827+0.1 EUR
1000+0.086 EUR
2500+0.067 EUR
3000+0.063 EUR
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BC849CWH6327XTSA1 bc847_8_9_bc850.pdf
BC849CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 420...800
Case: SOT323
Frequency: 250MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 992 Stücke:
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992+0.086 EUR
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BC858CWH6327 BC858CE6327.pdf
BC858CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: PNP
Case: SOT323
Frequency: 250MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 3022 Stücke:
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2907+0.03 EUR
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BC860CWH6327 BC860CWH6327.pdf
BC860CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.25W
Polarisation: bipolar
Case: SOT323
Frequency: 250MHz
auf Bestellung 1655 Stücke:
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795+0.11 EUR
1075+0.08 EUR
1215+0.07 EUR
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BCR108WH6327 BCR108WH6327.pdf
BCR108WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 170MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 2881 Stücke:
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385+0.23 EUR
496+0.17 EUR
571+0.15 EUR
705+0.12 EUR
861+0.099 EUR
1000+0.086 EUR
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BCR116WH6327 BCR116.pdf
BCR116WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 190 Stücke:
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190+0.44 EUR
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IRFB3077PBF description irfb3077pbf.pdf
IRFB3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Power dissipation: 370W
Gate charge: 160nC
Technology: HEXFET®
Gate-source voltage: ±20V
auf Bestellung 49 Stücke:
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18+4.86 EUR
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BAS2103WE6327HTSA1 BAS2103WE6327HTSA1.pdf
BAS2103WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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SPA17N80C3 description SPA17N80C3-DTE.pdf
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 42W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3-FP
auf Bestellung 16 Stücke:
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15+5.7 EUR
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SPB17N80C3 SPB17N80C3-DTE.pdf
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: SMD
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Case: PG-TO263-3
auf Bestellung 192 Stücke:
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13+6.56 EUR
25+5.89 EUR
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Produkt ist nicht verfügbar
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SPW17N80C3 description SPW17N80C3.pdf
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
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17+5.24 EUR
18+4.78 EUR
21+4.07 EUR
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IRF9540NPBF irf9540n.pdf
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.117Ω
Gate charge: 64.7nC
Gate-source voltage: ±20V
auf Bestellung 2117 Stücke:
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36+2.38 EUR
75+1.15 EUR
84+1.01 EUR
89+0.96 EUR
92+0.94 EUR
100+0.87 EUR
500+0.81 EUR
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IRF9540NSTRLPBF description irf9540nspbf.pdf
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP1405PBF irfp1405pbf.pdf
IRFP1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
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32+2.68 EUR
35+2.45 EUR
38+2.28 EUR
42+2.05 EUR
50+1.9 EUR
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IRFP140NPBF irfp140n.pdf
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
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27+3.2 EUR
47+1.82 EUR
59+1.45 EUR
61+1.42 EUR
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KIT_XMC11_BOOT_001 KIT-XMC11-BOOT-001-DTE.pdf
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Connection: pin strips; USB B micro
Kind of architecture: Cortex M0
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Components: XMC1100
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 BSC150N03LDG-DTE.pdf
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDG-DTE.pdf
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BAT6804WH6327XTSA1 BAT6804E6327HTSA1.pdf
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 8V; 0.13A; 150mW
Max. forward voltage: 0.5V
Power dissipation: 0.15W
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
138+0.62 EUR
152+0.56 EUR
198+0.43 EUR
217+0.39 EUR
Mindestbestellmenge: 122 Stücke
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