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IRLZ44NSTRLPBF IRLZ44NSTRLPBF INFINEON TECHNOLOGIES irlz44nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
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IGB30N60H3ATMA1 IGB30N60H3ATMA1 INFINEON TECHNOLOGIES IGB30N60H3-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 187W
auf Bestellung 890 Stücke:
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24+3.61 EUR
30+2.88 EUR
34+2.53 EUR
41+2.11 EUR
50+1.87 EUR
100+1.81 EUR
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IGB30N60TATMA1 IGB30N60TATMA1 INFINEON TECHNOLOGIES IGB30N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 187W
Gate charge: 167nC
Technology: TRENCHSTOP™
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IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES IGW30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 342 Stücke:
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19+4.55 EUR
23+3.71 EUR
30+2.92 EUR
34+2.53 EUR
120+2.11 EUR
300+2.09 EUR
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IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES IGW30N60TFKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 187W
auf Bestellung 59 Stücke:
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23+3.84 EUR
25+3.47 EUR
31+2.77 EUR
32+2.74 EUR
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES IKW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 30A
Manufacturer series: H3
Collector-emitter voltage: 600V
Power dissipation: 94W
Gate charge: 165nC
Technology: TRENCHSTOP™ 3
Features of semiconductor devices: integrated anti-parallel diode
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IKW30N60TFKSA1 IKW30N60TFKSA1 INFINEON TECHNOLOGIES IKW30N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 39A
Collector-emitter voltage: 600V
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
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AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 INFINEON TECHNOLOGIES AIKW30N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 187W
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
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IR21064PBF IR21064PBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
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IR2106SPBF IR2106SPBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
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33+2.64 EUR
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IR2106STRPBF IR2106STRPBF INFINEON TECHNOLOGIES ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 200ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
auf Bestellung 468 Stücke:
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51+1.69 EUR
59+1.46 EUR
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IR2102STRPBF IR2102STRPBF INFINEON TECHNOLOGIES IRSDS17613-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Power: 625mW
Turn-off time: 150ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -270...130mA
auf Bestellung 1301 Stücke:
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50+1.7 EUR
60+1.43 EUR
100+1.42 EUR
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IRFR5305TRLPBF IRFR5305TRLPBF INFINEON TECHNOLOGIES irfr5305pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3707 Stücke:
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37+2.31 EUR
61+1.4 EUR
68+1.26 EUR
100+0.99 EUR
200+0.89 EUR
500+0.8 EUR
1000+0.74 EUR
3000+0.67 EUR
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IRFR5305TRPBF IRFR5305TRPBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1195 Stücke:
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43+1.99 EUR
68+1.26 EUR
80+1.07 EUR
102+0.84 EUR
200+0.75 EUR
500+0.67 EUR
1000+0.61 EUR
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AUIRFR5305TR AUIRFR5305TR INFINEON TECHNOLOGIES auirfr5305.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFR193WH6327XTSA1 BFR193WH6327XTSA1 INFINEON TECHNOLOGIES BFR193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 644 Stücke:
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264+0.32 EUR
298+0.29 EUR
334+0.25 EUR
385+0.23 EUR
424+0.2 EUR
459+0.19 EUR
491+0.18 EUR
511+0.17 EUR
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 6A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.45 EUR
69+1.25 EUR
77+1.12 EUR
88+0.98 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate-emitter voltage: ±20V
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.78 EUR
74+1.15 EUR
104+0.82 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.3 EUR
61+1.39 EUR
67+1.27 EUR
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BSP149H6327XTSA1 BSP149H6327XTSA1 INFINEON TECHNOLOGIES BSP149H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.53A
Kind of channel: depletion
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 3.5Ω
Mounting: SMD
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IRF3808PBF IRF3808PBF INFINEON TECHNOLOGIES irf3808.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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7+12.15 EUR
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IRF3808STRLPBF IRF3808STRLPBF INFINEON TECHNOLOGIES irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.18 EUR
21+4.19 EUR
24+3.69 EUR
28+3.15 EUR
50+2.8 EUR
100+2.5 EUR
125+2.42 EUR
250+2.18 EUR
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BTS5215L BTS5215L INFINEON TECHNOLOGIES BTS5215L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Mounting: SMD
Supply voltage: 5.5...40V DC
Output current: 3.7A
Kind of output: N-Channel
Technology: Classic PROFET
Case: BSOP12
Kind of integrated circuit: high-side
Number of channels: 2
auf Bestellung 1079 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.18 EUR
19+4.7 EUR
20+4.34 EUR
25+3.93 EUR
50+3.63 EUR
100+3.36 EUR
250+3.06 EUR
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 INFINEON TECHNOLOGIES IGB50N65H5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 147ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 INFINEON TECHNOLOGIES IGB50N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Technology: TRENCHSTOP™ 5
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.89 EUR
31+2.8 EUR
50+2.38 EUR
100+2.23 EUR
125+2.14 EUR
150+2.09 EUR
500+1.77 EUR
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IGW50N65F5FKSA1 IGW50N65F5FKSA1 INFINEON TECHNOLOGIES IGW50N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.74 EUR
16+5.33 EUR
18+5 EUR
22+4.01 EUR
25+3.51 EUR
30+3.25 EUR
Mindestbestellmenge: 15 Stücke
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IGW50N65H5FKSA1 IGW50N65H5FKSA1 INFINEON TECHNOLOGIES DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IGZ50N65H5XKSA1 IGZ50N65H5XKSA1 INFINEON TECHNOLOGIES IGZ50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 271ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES IHW50N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 50ns
Turn-off time: 218ns
Technology: TRENCHSTOP™ 5
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.02 EUR
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IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 INFINEON TECHNOLOGIES IKW50N65EH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 207ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 INFINEON TECHNOLOGIES IKW50N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 47ns
Turn-off time: 161ns
Technology: TRENCHSTOP™ 5
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES IKW50N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 256 Stücke:
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16+5.62 EUR
17+5.3 EUR
21+4.2 EUR
23+3.75 EUR
30+3.49 EUR
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IKW50N65H5FKSA1 IKW50N65H5FKSA1 INFINEON TECHNOLOGIES IKW50N65H5FKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 65 Stücke:
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IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 INFINEON TECHNOLOGIES IKW50N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 79ns
Turn-off time: 420ns
Technology: TRENCHSTOP™ 5
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10+8.51 EUR
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 INFINEON TECHNOLOGIES IKZ50N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 58ns
Turn-off time: 326ns
Technology: TRENCHSTOP™ 5
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IKZ50N65NH5XKSA1 IKZ50N65NH5XKSA1 INFINEON TECHNOLOGIES IKZ50N65NH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 30ns
Turn-off time: 275ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IRLR3705ZTRPBF IRLR3705ZTRPBF INFINEON TECHNOLOGIES IRLR3705ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1707 Stücke:
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35+2.43 EUR
43+2.02 EUR
49+1.77 EUR
64+1.34 EUR
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IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES irlr3114zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES IHW30N160R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Turn-off time: 411ns
auf Bestellung 242 Stücke:
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21+4.13 EUR
25+3.45 EUR
30+3.21 EUR
120+3.2 EUR
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IR2113PBF IR2113PBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Power: 1.6W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 1450 Stücke:
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19+4.51 EUR
24+3.64 EUR
26+3.3 EUR
27+3.17 EUR
50+3.05 EUR
100+2.94 EUR
250+2.82 EUR
500+2.73 EUR
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IRLML9301TRPBF IRLML9301TRPBF INFINEON TECHNOLOGIES irlml9301pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
auf Bestellung 71 Stücke:
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71+1.19 EUR
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SMBT2222AE6327HTSA1 SMBT2222AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2222AE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
auf Bestellung 2241 Stücke:
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239+0.36 EUR
321+0.26 EUR
459+0.19 EUR
532+0.15 EUR
722+0.12 EUR
1000+0.1 EUR
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 INFINEON TECHNOLOGIES BSC040N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB64N25S320ATMA1 INFINEON TECHNOLOGIES infineon-ipb64n25s3-20-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS® -T
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3-2
On-state resistance: 20mΩ
Pulsed drain current: 256A
Power dissipation: 300W
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES 2N7002H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4181 Stücke:
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455+0.19 EUR
603+0.14 EUR
810+0.1 EUR
915+0.093 EUR
1200+0.071 EUR
1341+0.063 EUR
3000+0.057 EUR
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES irf1405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.3mΩ
Gate charge: 170nC
Gate-source voltage: ±20V
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.69 EUR
44+1.94 EUR
54+1.59 EUR
60+1.43 EUR
100+1.33 EUR
500+1.23 EUR
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES irf1405spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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 Mindestbestellmenge: 800 Stücke
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.07 EUR
20+4.47 EUR
22+3.89 EUR
25+3.63 EUR
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES IRFB4115.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
21+4.07 EUR
28+3.09 EUR
30+2.93 EUR
33+2.62 EUR
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
6+15.28 EUR
10+14.76 EUR
30+14.05 EUR
120+12.63 EUR
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES irfr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4799 Stücke:
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173+0.49 EUR
183+0.46 EUR
191+0.45 EUR
199+0.43 EUR
250+0.4 EUR
500+0.39 EUR
1000+0.36 EUR
2000+0.35 EUR
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES IHW30N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 165W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 90A
Turn-off time: 363ns
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 11 Stücke:
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11+7.75 EUR
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IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 52W
Gate charge: 22.6nC
Technology: OptiMOS™ 5
On-state resistance: 9.8mΩ
Pulsed drain current: 168A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES IPA060N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 33W
Technology: OptiMOS™
On-state resistance: 6mΩ
Produkt ist nicht verfügbar
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IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES irf9z24n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 827 Stücke:
Lieferzeit 14-21 Tag (e)
80+1.07 EUR
109+0.79 EUR
124+0.69 EUR
134+0.63 EUR
146+0.58 EUR
500+0.48 EUR
Mindestbestellmenge: 80 Stücke
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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
736+0.12 EUR
782+0.11 EUR
855+0.1 EUR
906+0.094 EUR
1009+0.084 EUR
Mindestbestellmenge: 500 Stücke
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES BSS127H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 500Ω
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
222+0.38 EUR
313+0.27 EUR
363+0.24 EUR
511+0.17 EUR
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IRLZ44NSTRLPBF irlz44nspbf.pdf
IRLZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IGB30N60H3ATMA1 IGB30N60H3-DTE.pdf
IGB30N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 187W
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.61 EUR
30+2.88 EUR
34+2.53 EUR
41+2.11 EUR
50+1.87 EUR
100+1.81 EUR
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IGB30N60TATMA1 IGB30N60T.pdf
IGB30N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 187W
Gate charge: 167nC
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
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IGW30N60H3FKSA1 IGW30N60H3-DTE.pdf
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 342 Stücke:
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19+4.55 EUR
23+3.71 EUR
30+2.92 EUR
34+2.53 EUR
120+2.11 EUR
300+2.09 EUR
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IGW30N60TFKSA1 IGW30N60TFKSA1-DTE.pdf
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 187W
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
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23+3.84 EUR
25+3.47 EUR
31+2.77 EUR
32+2.74 EUR
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IKW30N60H3FKSA1 IKW30N60H3.pdf
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 30A
Manufacturer series: H3
Collector-emitter voltage: 600V
Power dissipation: 94W
Gate charge: 165nC
Technology: TRENCHSTOP™ 3
Features of semiconductor devices: integrated anti-parallel diode
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IKW30N60TFKSA1 IKW30N60T.pdf
IKW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 39A
Collector-emitter voltage: 600V
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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AIKW30N60CTXKSA1 AIKW30N60CT.pdf
AIKW30N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 187W
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IR21064PBF ir2106.pdf
IR21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IR2106SPBF ir2106.pdf
IR2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
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IR2106STRPBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 200ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
auf Bestellung 468 Stücke:
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IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Power: 625mW
Turn-off time: 150ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -270...130mA
auf Bestellung 1301 Stücke:
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60+1.43 EUR
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IRFR5305TRLPBF irfr5305pbf.pdf
IRFR5305TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3707 Stücke:
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37+2.31 EUR
61+1.4 EUR
68+1.26 EUR
100+0.99 EUR
200+0.89 EUR
500+0.8 EUR
1000+0.74 EUR
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IRFR5305TRPBF description irfr5305pbf.pdf
IRFR5305TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1195 Stücke:
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43+1.99 EUR
68+1.26 EUR
80+1.07 EUR
102+0.84 EUR
200+0.75 EUR
500+0.67 EUR
1000+0.61 EUR
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AUIRFR5305TR auirfr5305.pdf
AUIRFR5305TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR193WH6327XTSA1 BFR193WH6327-dte.pdf
BFR193WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 644 Stücke:
Lieferzeit 14-21 Tag (e)
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264+0.32 EUR
298+0.29 EUR
334+0.25 EUR
385+0.23 EUR
424+0.2 EUR
459+0.19 EUR
491+0.18 EUR
511+0.17 EUR
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IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 6A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 88 Stücke:
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59+1.45 EUR
69+1.25 EUR
77+1.12 EUR
88+0.98 EUR
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IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate-emitter voltage: ±20V
auf Bestellung 437 Stücke:
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48+1.78 EUR
74+1.15 EUR
104+0.82 EUR
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IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 480 Stücke:
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38+2.3 EUR
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67+1.27 EUR
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BSP149H6327XTSA1 BSP149H6327XTSA1.pdf
BSP149H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.53A
Kind of channel: depletion
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 3.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
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IRF3808PBF description irf3808.pdf
IRF3808PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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7+12.15 EUR
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IRF3808STRLPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 370 Stücke:
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17+5.18 EUR
21+4.19 EUR
24+3.69 EUR
28+3.15 EUR
50+2.8 EUR
100+2.5 EUR
125+2.42 EUR
250+2.18 EUR
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BTS5215L BTS5215L.pdf
BTS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Mounting: SMD
Supply voltage: 5.5...40V DC
Output current: 3.7A
Kind of output: N-Channel
Technology: Classic PROFET
Case: BSOP12
Kind of integrated circuit: high-side
Number of channels: 2
auf Bestellung 1079 Stücke:
Lieferzeit 14-21 Tag (e)
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14+6.18 EUR
19+4.7 EUR
20+4.34 EUR
25+3.93 EUR
50+3.63 EUR
100+3.36 EUR
250+3.06 EUR
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IGB50N65H5ATMA1 IGB50N65H5.pdf
IGB50N65H5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 147ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IGB50N65S5ATMA1 IGB50N65S5.pdf
IGB50N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Technology: TRENCHSTOP™ 5
auf Bestellung 770 Stücke:
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AnzahlPrivatkunde
22+3.89 EUR
31+2.8 EUR
50+2.38 EUR
100+2.23 EUR
125+2.14 EUR
150+2.09 EUR
500+1.77 EUR
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IGW50N65F5FKSA1 IGW50N65F5.pdf
IGW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.74 EUR
16+5.33 EUR
18+5 EUR
22+4.01 EUR
25+3.51 EUR
30+3.25 EUR
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IGW50N65H5FKSA1 DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25
IGW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IGZ50N65H5XKSA1 IGZ50N65H5.pdf
IGZ50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 271ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IHW50N65R5XKSA1 IHW50N65R5.pdf
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 50ns
Turn-off time: 218ns
Technology: TRENCHSTOP™ 5
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.02 EUR
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IKW50N65EH5XKSA1 IKW50N65EH5.pdf
IKW50N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 207ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW50N65ES5XKSA1 IKW50N65ES5.pdf
IKW50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 47ns
Turn-off time: 161ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW50N65F5FKSA1 IKW50N65F5-DTE.pdf
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 256 Stücke:
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16+5.62 EUR
17+5.3 EUR
21+4.2 EUR
23+3.75 EUR
30+3.49 EUR
120+2.89 EUR
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IKW50N65H5FKSA1 IKW50N65H5FKSA1-DTE.pdf
IKW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
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19+4.55 EUR
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IKW50N65WR5XKSA1 IKW50N65WR5.pdf
IKW50N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 79ns
Turn-off time: 420ns
Technology: TRENCHSTOP™ 5
auf Bestellung 10 Stücke:
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10+8.51 EUR
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IKZ50N65ES5XKSA1 IKZ50N65ES5.pdf
IKZ50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 58ns
Turn-off time: 326ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKZ50N65NH5XKSA1 IKZ50N65NH5.pdf
IKZ50N65NH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 30ns
Turn-off time: 275ns
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IRLR3705ZTRPBF IRLR3705ZTRPBF.pdf
IRLR3705ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1707 Stücke:
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35+2.43 EUR
43+2.02 EUR
49+1.77 EUR
64+1.34 EUR
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IRLR3114ZTRPBF irlr3114zpbf.pdf
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IHW30N160R5XKSA1 IHW30N160R5.pdf
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Turn-off time: 411ns
auf Bestellung 242 Stücke:
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21+4.13 EUR
25+3.45 EUR
30+3.21 EUR
120+3.2 EUR
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IR2113PBF description ir2110_2113.pdf
IR2113PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Power: 1.6W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 1450 Stücke:
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19+4.51 EUR
24+3.64 EUR
26+3.3 EUR
27+3.17 EUR
50+3.05 EUR
100+2.94 EUR
250+2.82 EUR
500+2.73 EUR
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IRLML9301TRPBF irlml9301pbf.pdf
IRLML9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
auf Bestellung 71 Stücke:
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71+1.19 EUR
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SMBT2222AE6327HTSA1 SMBT2222AE6327.pdf
SMBT2222AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
auf Bestellung 2241 Stücke:
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239+0.36 EUR
321+0.26 EUR
459+0.19 EUR
532+0.15 EUR
722+0.12 EUR
1000+0.1 EUR
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BSC040N10NS5ATMA1 BSC040N10NS5-DTE.pdf
BSC040N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB64N25S320ATMA1 infineon-ipb64n25s3-20-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS® -T
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3-2
On-state resistance: 20mΩ
Pulsed drain current: 256A
Power dissipation: 300W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2N7002H6327XTSA2 2N7002H6327XTSA2.pdf
2N7002H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4181 Stücke:
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455+0.19 EUR
603+0.14 EUR
810+0.1 EUR
915+0.093 EUR
1200+0.071 EUR
1341+0.063 EUR
3000+0.057 EUR
Mindestbestellmenge: 455 Stücke
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IRF1405PBF irf1405.pdf
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.3mΩ
Gate charge: 170nC
Gate-source voltage: ±20V
auf Bestellung 1576 Stücke:
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24+3.69 EUR
44+1.94 EUR
54+1.59 EUR
60+1.43 EUR
100+1.33 EUR
500+1.23 EUR
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IRF1405STRLPBF irf1405spbf.pdf
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS21064PBF irs2106.pdf
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
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17+5.07 EUR
20+4.47 EUR
22+3.89 EUR
25+3.63 EUR
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IRS2106SPBF irs2106.pdf
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115.pdf
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
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21+4.07 EUR
28+3.09 EUR
30+2.93 EUR
33+2.62 EUR
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BCV47E6327 BCV27E6327.pdf
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
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6+15.28 EUR
10+14.76 EUR
30+14.05 EUR
120+12.63 EUR
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SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR024NTRPBF description irfr024npbf.pdf
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4799 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
173+0.49 EUR
183+0.46 EUR
191+0.45 EUR
199+0.43 EUR
250+0.4 EUR
500+0.39 EUR
1000+0.36 EUR
2000+0.35 EUR
Mindestbestellmenge: 173 Stücke
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IHW30N120R5XKSA1 IHW30N120R5.pdf
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 165W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 90A
Turn-off time: 363ns
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
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11+7.75 EUR
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IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
IAUC60N06S5L073ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 52W
Gate charge: 22.6nC
Technology: OptiMOS™ 5
On-state resistance: 9.8mΩ
Pulsed drain current: 168A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPA060N06NXKSA1 IPA060N06N-DTE.pdf
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 33W
Technology: OptiMOS™
On-state resistance: 6mΩ
Produkt ist nicht verfügbar
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IRF9Z24NPBF irf9z24n.pdf
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 827 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
80+1.07 EUR
109+0.79 EUR
124+0.69 EUR
134+0.63 EUR
146+0.58 EUR
500+0.48 EUR
Mindestbestellmenge: 80 Stücke
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BAT6404E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
736+0.12 EUR
782+0.11 EUR
855+0.1 EUR
906+0.094 EUR
1009+0.084 EUR
Mindestbestellmenge: 500 Stücke
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BSS127H6327XTSA2 BSS127H6327XTSA2.pdf
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 500Ω
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
222+0.38 EUR
313+0.27 EUR
363+0.24 EUR
511+0.17 EUR
Mindestbestellmenge: 152 Stücke
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