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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Power: 1W
Turn-off time: 190ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -420...200mA
auf Bestellung 55 Stücke:
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27+3.2 EUR
50+2.57 EUR
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES IR2111SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Turn-off time: 190ns
Topology: MOSFET half-bridge
Voltage class: 600V
Turn-on time: 830ns
auf Bestellung 83 Stücke:
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40+2.18 EUR
43+2.02 EUR
50+1.93 EUR
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BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 1855 Stücke:
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295+0.29 EUR
424+0.2 EUR
544+0.15 EUR
1000+0.11 EUR
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES BSS214NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT323
On-state resistance: 0.25Ω
Mounting: SMD
auf Bestellung 10986 Stücke:
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193+0.44 EUR
280+0.31 EUR
488+0.18 EUR
604+0.14 EUR
701+0.12 EUR
1000+0.11 EUR
3000+0.088 EUR
6000+0.08 EUR
9000+0.075 EUR
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IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3-11
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 100W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 80A
auf Bestellung 262 Stücke:
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10+8.97 EUR
13+7 EUR
14+6.28 EUR
30+5.81 EUR
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 165A
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 238 Stücke:
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9+9.72 EUR
10+8.68 EUR
11+7.91 EUR
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PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.25V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
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PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES IGB20N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 80A
Turn-on time: 27ns
Turn-off time: 137ns
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 650V
Gate charge: 48nC
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES IHW20N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 60A
Turn-off time: 257ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 650V
Gate charge: 97nC
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES IKB20N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
Gate-emitter voltage: ±20V
Collector current: 25A
Collector-emitter voltage: 650V
Gate charge: 48nC
auf Bestellung 909 Stücke:
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22+3.89 EUR
28+3.12 EUR
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SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES irf7103pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3299 Stücke:
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65+1.31 EUR
78+1.09 EUR
92+0.93 EUR
114+0.75 EUR
155+0.55 EUR
188+0.45 EUR
215+0.39 EUR
250+0.38 EUR
500+0.36 EUR
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IRFZ34NPBF IRFZ34NPBF INFINEON TECHNOLOGIES irfz34n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate charge: 22.7nC
Gate-source voltage: ±20V
auf Bestellung 1294 Stücke:
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117+0.73 EUR
125+0.69 EUR
132+0.64 EUR
150+0.57 EUR
500+0.45 EUR
1000+0.42 EUR
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IRFZ34NSTRLPBF IRFZ34NSTRLPBF INFINEON TECHNOLOGIES irfz34nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.69 EUR
73+1.17 EUR
85+1 EUR
100+0.96 EUR
250+0.92 EUR
500+0.86 EUR
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IRFP4568PBF IRFP4568PBF INFINEON TECHNOLOGIES irfp4568pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Power dissipation: 517W
Gate charge: 151nC
Technology: HEXFET®
Gate-source voltage: ±30V
auf Bestellung 45 Stücke:
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12+7.15 EUR
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 INFINEON TECHNOLOGIES IGP40N65F5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 474 Stücke:
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23+3.87 EUR
24+3.64 EUR
25+3.45 EUR
26+3.28 EUR
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IGP40N65H5XKSA1 IGP40N65H5XKSA1 INFINEON TECHNOLOGIES DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 325 Stücke:
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23+3.83 EUR
29+3.01 EUR
33+2.65 EUR
39+2.21 EUR
50+1.98 EUR
100+1.93 EUR
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IGW40N65F5FKSA1 IGW40N65F5FKSA1 INFINEON TECHNOLOGIES IGP40N65F5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 79 Stücke:
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17+5.14 EUR
27+3.24 EUR
29+3 EUR
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IGW40N65H5FKSA1 IGW40N65H5FKSA1 INFINEON TECHNOLOGIES IGW40N65H5FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 146 Stücke:
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14+6.32 EUR
24+3.56 EUR
30+3.51 EUR
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES IHW40N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 20 Stücke:
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20+4.26 EUR
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 115 Stücke:
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18+4.74 EUR
28+3.06 EUR
30+3.05 EUR
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IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES IKB40N65EF5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES IKB40N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES IKB40N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 INFINEON TECHNOLOGIES IKW40N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 115W
Gate charge: 95nC
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Turn-on time: 37ns
Kind of package: tube
Case: TO247-3
Turn-off time: 153ns
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.21 EUR
30+3.72 EUR
60+3.68 EUR
Mindestbestellmenge: 14 Stücke
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IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES IKW40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
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IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES IKW40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES IKW40N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.82 EUR
20+4.26 EUR
27+3.18 EUR
30+2.84 EUR
31+2.8 EUR
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SN7002WH6327XTSA1 SN7002WH6327XTSA1 INFINEON TECHNOLOGIES SN7002WH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.23A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT323
On-state resistance: 5Ω
Mounting: SMD
auf Bestellung 77 Stücke:
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IRFS3207TRLPBF IRFS3207TRLPBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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FM25L16B-G FM25L16B-G INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Clock frequency: 20MHz
Memory organisation: 2kx8bit
Interface: SPI
auf Bestellung 1372 Stücke:
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20+4.43 EUR
21+4.08 EUR
25+3.44 EUR
97+3.17 EUR
485+2.76 EUR
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IRFZ24NPBF IRFZ24NPBF INFINEON TECHNOLOGIES irfz24n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.92 EUR
177+0.48 EUR
217+0.39 EUR
237+0.36 EUR
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IR2110PBF IR2110PBF INFINEON TECHNOLOGIES ir2110_2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Power: 1.6W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
21+4.24 EUR
23+3.77 EUR
27+3.18 EUR
29+2.98 EUR
50+2.84 EUR
100+2.76 EUR
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IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 762 Stücke:
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17+5.31 EUR
18+4.83 EUR
22+3.95 EUR
25+3.63 EUR
45+3.45 EUR
90+3.3 EUR
270+2.96 EUR
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IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES IR2110STRPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 1347 Stücke:
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22+3.96 EUR
25+3.49 EUR
30+2.93 EUR
32+2.7 EUR
50+2.57 EUR
100+2.46 EUR
250+2.34 EUR
1000+2.17 EUR
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IHW20N135R5XKSA1 IHW20N135R5XKSA1 INFINEON TECHNOLOGIES IHW20N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.11 EUR
30+2.88 EUR
32+2.7 EUR
35+2.49 EUR
60+2.38 EUR
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1EDN7512BXTSA1 1EDN7512BXTSA1 INFINEON TECHNOLOGIES 1EDN751x_1EDN851x.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Technology: EiceDRIVER™
Case: PG-SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Type of integrated circuit: driver
auf Bestellung 1385 Stücke:
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114+0.75 EUR
126+0.68 EUR
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IRLML0040TRPBF IRLML0040TRPBF INFINEON TECHNOLOGIES irlml0040pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLML0100TRPBF IRLML0100TRPBF INFINEON TECHNOLOGIES irlml0100pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3054 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.71 EUR
153+0.56 EUR
180+0.48 EUR
319+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.14 EUR
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IRLML6244TRPBF IRLML6244TRPBF INFINEON TECHNOLOGIES irlml6244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC848BE6327HTSA1 BC848BE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2740 Stücke:
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1140+0.076 EUR
1260+0.068 EUR
1420+0.06 EUR
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IRF7342TRPBF IRF7342TRPBF INFINEON TECHNOLOGIES irf7342pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
40+2.18 EUR
63+1.37 EUR
100+0.96 EUR
250+0.86 EUR
500+0.77 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 40 Stücke
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IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES IKD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.55 EUR
75+1.14 EUR
106+0.8 EUR
122+0.7 EUR
200+0.68 EUR
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IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES IKP04N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
41+2.07 EUR
73+1.17 EUR
85+1 EUR
90+0.95 EUR
97+0.88 EUR
103+0.83 EUR
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IGB15N60TATMA1 IGB15N60TATMA1 INFINEON TECHNOLOGIES IGB15N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.5 EUR
44+1.98 EUR
50+1.74 EUR
55+1.57 EUR
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IGW75N60H3FKSA1 IGW75N60H3FKSA1 INFINEON TECHNOLOGIES IGW75N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGW75N60TFKSA1 IGW75N60TFKSA1 INFINEON TECHNOLOGIES IGW75N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
auf Bestellung 51 Stücke:
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13+6.77 EUR
20+4.47 EUR
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IKA15N60TXKSA1 IKA15N60TXKSA1 INFINEON TECHNOLOGIES IKA15N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 10.6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 28ns
Produkt ist nicht verfügbar
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 28ns
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
29+3.01 EUR
31+2.8 EUR
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-off time: 319ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 26ns
auf Bestellung 1866 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.82 EUR
40+2.14 EUR
46+1.89 EUR
53+1.63 EUR
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IKD15N60RFATMA1 IKD15N60RFATMA1 INFINEON TECHNOLOGIES IKD15N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.69 EUR
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IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 85ns
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.82 EUR
11+8.04 EUR
12+7.49 EUR
30+6.45 EUR
Mindestbestellmenge: 10 Stücke
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IRFU9024NPBF IRFU9024NPBF INFINEON TECHNOLOGIES irfr9024n.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
auf Bestellung 1363 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.57 EUR
94+0.9 EUR
108+0.79 EUR
128+0.67 EUR
150+0.62 EUR
375+0.56 EUR
525+0.54 EUR
1050+0.5 EUR
Mindestbestellmenge: 55 Stücke
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BSS126H6327XTSA2 BSS126H6327XTSA2 INFINEON TECHNOLOGIES BSS126H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 700Ω
Mounting: SMD
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2007 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.82 EUR
138+0.62 EUR
160+0.54 EUR
271+0.31 EUR
500+0.29 EUR
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IR2103STRPBF IR2103STRPBF INFINEON TECHNOLOGIES ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Power: 625mW
Turn-off time: 150ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -270...130mA
auf Bestellung 2097 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.78 EUR
51+1.69 EUR
58+1.48 EUR
64+1.34 EUR
73+1.18 EUR
79+1.09 EUR
100+1.02 EUR
250+0.98 EUR
Mindestbestellmenge: 48 Stücke
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IRLZ44NPBF IRLZ44NPBF INFINEON TECHNOLOGIES irlz44n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 5064 Stücke:
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IR2111PBF description ir2111.pdf
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Power: 1W
Turn-off time: 190ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -420...200mA
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IR2111SPBF description IR2111SPBF.pdf
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Turn-off time: 190ns
Topology: MOSFET half-bridge
Voltage class: 600V
Turn-on time: 830ns
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BC847PNH6327XTSA1 BC846PNH6327.pdf
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1.pdf
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT323
On-state resistance: 0.25Ω
Mounting: SMD
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193+0.44 EUR
280+0.31 EUR
488+0.18 EUR
604+0.14 EUR
701+0.12 EUR
1000+0.11 EUR
3000+0.088 EUR
6000+0.08 EUR
9000+0.075 EUR
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IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3-11
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 100W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 80A
auf Bestellung 262 Stücke:
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IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 165A
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 238 Stücke:
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PVT422PBF description pvt422.pdf
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.25V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PVT422SPBF description pvt422.pdf
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IGB20N65S5ATMA1 IGB20N65S5.pdf
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 80A
Turn-on time: 27ns
Turn-off time: 137ns
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 650V
Gate charge: 48nC
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 IHW20N65R5.pdf
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 60A
Turn-off time: 257ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 650V
Gate charge: 97nC
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5.pdf
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
Gate-emitter voltage: ±20V
Collector current: 25A
Collector-emitter voltage: 650V
Gate charge: 48nC
auf Bestellung 909 Stücke:
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SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7103TRPBF description irf7103pbf.pdf
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3299 Stücke:
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65+1.31 EUR
78+1.09 EUR
92+0.93 EUR
114+0.75 EUR
155+0.55 EUR
188+0.45 EUR
215+0.39 EUR
250+0.38 EUR
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IRFZ34NPBF irfz34n.pdf
IRFZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate charge: 22.7nC
Gate-source voltage: ±20V
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117+0.73 EUR
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132+0.64 EUR
150+0.57 EUR
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1000+0.42 EUR
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IRFZ34NSTRLPBF irfz34nspbf.pdf
IRFZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 750 Stücke:
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51+1.69 EUR
73+1.17 EUR
85+1 EUR
100+0.96 EUR
250+0.92 EUR
500+0.86 EUR
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IRFP4568PBF description irfp4568pbf.pdf
IRFP4568PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Power dissipation: 517W
Gate charge: 151nC
Technology: HEXFET®
Gate-source voltage: ±30V
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IGP40N65F5XKSA1 IGP40N65F5XKSA1-DTE.pdf
IGP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 474 Stücke:
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IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 325 Stücke:
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23+3.83 EUR
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39+2.21 EUR
50+1.98 EUR
100+1.93 EUR
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IGW40N65F5FKSA1 IGP40N65F5XKSA1-DTE.pdf
IGW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 79 Stücke:
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17+5.14 EUR
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29+3 EUR
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IGW40N65H5FKSA1 IGW40N65H5FKSA1.pdf
IGW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 146 Stücke:
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14+6.32 EUR
24+3.56 EUR
30+3.51 EUR
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IHW40N65R5XKSA1 IHW40N65R5.pdf
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
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20+4.26 EUR
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IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 115 Stücke:
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IKB40N65EF5ATMA1 IKB40N65EF5.pdf
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 IKB40N65EH5.pdf
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 IKB40N65ES5.pdf
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 IKW40N65ES5.pdf
IKW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 115W
Gate charge: 95nC
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Turn-on time: 37ns
Kind of package: tube
Case: TO247-3
Turn-off time: 153ns
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 218 Stücke:
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14+6.21 EUR
30+3.72 EUR
60+3.68 EUR
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IKW40N65F5FKSA1 IKW40N65F5-DTE.pdf
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
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IKW40N65H5FKSA1 IKW40N65H5-DTE.pdf
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW40N65WR5XKSA1 IKW40N65WR5.pdf
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.82 EUR
20+4.26 EUR
27+3.18 EUR
30+2.84 EUR
31+2.8 EUR
Mindestbestellmenge: 18 Stücke
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SN7002WH6327XTSA1 SN7002WH6327XTSA1.pdf
SN7002WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.23A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT323
On-state resistance: 5Ω
Mounting: SMD
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
77+1.11 EUR
Mindestbestellmenge: 77 Stücke
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IRFS3207TRLPBF irfs3207pbf.pdf
IRFS3207TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FM25L16B-G Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Clock frequency: 20MHz
Memory organisation: 2kx8bit
Interface: SPI
auf Bestellung 1372 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.43 EUR
21+4.08 EUR
25+3.44 EUR
97+3.17 EUR
485+2.76 EUR
Mindestbestellmenge: 20 Stücke
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IRFZ24NPBF description irfz24n.pdf
IRFZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
177+0.48 EUR
217+0.39 EUR
237+0.36 EUR
Mindestbestellmenge: 93 Stücke
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IR2110PBF ir2110_2113.pdf
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Power: 1.6W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.24 EUR
23+3.77 EUR
27+3.18 EUR
29+2.98 EUR
50+2.84 EUR
100+2.76 EUR
Mindestbestellmenge: 21 Stücke
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IR2110SPBF description ir2110_2113.pdf
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.31 EUR
18+4.83 EUR
22+3.95 EUR
25+3.63 EUR
45+3.45 EUR
90+3.3 EUR
270+2.96 EUR
Mindestbestellmenge: 17 Stücke
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IR2110STRPBF description IR2110STRPBF.pdf
IR2110STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 1347 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.96 EUR
25+3.49 EUR
30+2.93 EUR
32+2.7 EUR
50+2.57 EUR
100+2.46 EUR
250+2.34 EUR
1000+2.17 EUR
Mindestbestellmenge: 22 Stücke
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IHW20N135R5XKSA1 IHW20N135R5.pdf
IHW20N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.11 EUR
30+2.88 EUR
32+2.7 EUR
35+2.49 EUR
60+2.38 EUR
Mindestbestellmenge: 17 Stücke
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1EDN7512BXTSA1 1EDN751x_1EDN851x.pdf
1EDN7512BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Technology: EiceDRIVER™
Case: PG-SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Type of integrated circuit: driver
auf Bestellung 1385 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
114+0.75 EUR
126+0.68 EUR
Mindestbestellmenge: 114 Stücke
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IRLML0040TRPBF irlml0040pbf.pdf
IRLML0040TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLML0100TRPBF irlml0100pbf.pdf
IRLML0100TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3054 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
153+0.56 EUR
180+0.48 EUR
319+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.14 EUR
Mindestbestellmenge: 120 Stücke
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IRLML6244TRPBF irlml6244pbf.pdf
IRLML6244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC848BE6327HTSA1 bc847_8_9_bc850.pdf
BC848BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1140+0.076 EUR
1260+0.068 EUR
1420+0.06 EUR
Mindestbestellmenge: 1140 Stücke
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IRF7342TRPBF irf7342pbf.pdf
IRF7342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.18 EUR
63+1.37 EUR
100+0.96 EUR
250+0.86 EUR
500+0.77 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 40 Stücke
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IKD04N60RATMA1 IKD04N60R.pdf
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.55 EUR
75+1.14 EUR
106+0.8 EUR
122+0.7 EUR
200+0.68 EUR
Mindestbestellmenge: 55 Stücke
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IKP04N60TXKSA1 IKP04N60T.pdf
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.07 EUR
73+1.17 EUR
85+1 EUR
90+0.95 EUR
97+0.88 EUR
103+0.83 EUR
Mindestbestellmenge: 41 Stücke
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IGB15N60TATMA1 IGB15N60T-DTE.pdf
IGB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.5 EUR
44+1.98 EUR
50+1.74 EUR
55+1.57 EUR
Mindestbestellmenge: 35 Stücke
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IGW75N60H3FKSA1 IGW75N60H3-DTE.pdf
IGW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 IGW75N60T-DTE.pdf
IGW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.77 EUR
20+4.47 EUR
Mindestbestellmenge: 13 Stücke
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IKA15N60TXKSA1 IKA15N60T.pdf
IKA15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 10.6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 28ns
Produkt ist nicht verfügbar
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IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 28ns
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+3.01 EUR
31+2.8 EUR
Mindestbestellmenge: 29 Stücke
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IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-off time: 319ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 26ns
auf Bestellung 1866 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
31+2.82 EUR
40+2.14 EUR
46+1.89 EUR
53+1.63 EUR
Mindestbestellmenge: 31 Stücke
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IKD15N60RFATMA1 IKD15N60RF.pdf
IKD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.69 EUR
Mindestbestellmenge: 23 Stücke
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IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 85ns
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.82 EUR
11+8.04 EUR
12+7.49 EUR
30+6.45 EUR
Mindestbestellmenge: 10 Stücke
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IRFU9024NPBF description irfr9024n.pdf
IRFU9024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
auf Bestellung 1363 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.57 EUR
94+0.9 EUR
108+0.79 EUR
128+0.67 EUR
150+0.62 EUR
375+0.56 EUR
525+0.54 EUR
1050+0.5 EUR
Mindestbestellmenge: 55 Stücke
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BSS126H6327XTSA2 BSS126H6327XTSA2.pdf
BSS126H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 700Ω
Mounting: SMD
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2007 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
138+0.62 EUR
160+0.54 EUR
271+0.31 EUR
500+0.29 EUR
Mindestbestellmenge: 105 Stücke
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IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Power: 625mW
Turn-off time: 150ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -270...130mA
auf Bestellung 2097 Stücke:
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48+1.78 EUR
51+1.69 EUR
58+1.48 EUR
64+1.34 EUR
73+1.18 EUR
79+1.09 EUR
100+1.02 EUR
250+0.98 EUR
Mindestbestellmenge: 48 Stücke
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IRLZ44NPBF description irlz44n.pdf
IRLZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 5064 Stücke:
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AnzahlPrivatkunde
41+2.09 EUR
59+1.45 EUR
77+1.12 EUR
100+1.01 EUR
250+0.88 EUR
500+0.81 EUR
1000+0.74 EUR
1250+0.71 EUR
2000+0.68 EUR
Mindestbestellmenge: 41 Stücke
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