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IRFP260MPBF IRFP260MPBF INFINEON TECHNOLOGIES irfp260mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 681 Stücke:
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18+4.76 EUR
24+3.63 EUR
30+2.92 EUR
40+2.13 EUR
50+1.81 EUR
100+1.67 EUR
125+1.65 EUR
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IRFP260NPBF IRFP260NPBF INFINEON TECHNOLOGIES irfp260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 800 Stücke:
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20+4.26 EUR
25+3.81 EUR
50+3.49 EUR
100+3.2 EUR
400+2.73 EUR
500+2.65 EUR
800+2.52 EUR
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IRFP2907PBF IRFP2907PBF INFINEON TECHNOLOGIES irfp2907.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 230 Stücke:
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14+6.53 EUR
19+4.62 EUR
25+4.43 EUR
50+4.22 EUR
100+3.96 EUR
125+3.88 EUR
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IRF1407PBF IRF1407PBF INFINEON TECHNOLOGIES irf1407pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Kind of package: tube
auf Bestellung 184 Stücke:
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24+3.69 EUR
39+2.21 EUR
44+1.95 EUR
50+1.81 EUR
100+1.65 EUR
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IRF1407STRLPBF IRF1407STRLPBF INFINEON TECHNOLOGIES infineon-irf1407spbf-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES IKA10N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 9A
Manufacturer series: T6
Collector-emitter voltage: 650V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 42.5A
auf Bestellung 53 Stücke:
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40+2.18 EUR
43+2.01 EUR
50+1.93 EUR
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 INFINEON TECHNOLOGIES IGB15N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 650V
Power dissipation: 52.5W
Gate charge: 38nC
Produkt ist nicht verfügbar
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES IKB15N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 45A
Turn-on time: 33ns
Turn-off time: 172ns
Gate-emitter voltage: ±20V
Collector current: 18A
Collector-emitter voltage: 650V
Power dissipation: 52.5W
Gate charge: 38nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES SPW20N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 567 Stücke:
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23+3.87 EUR
25+3.47 EUR
28+3.08 EUR
30+2.86 EUR
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SPP20N60C3 SPP20N60C3 INFINEON TECHNOLOGIES spp20n60c3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 734 Stücke:
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19+4.68 EUR
32+2.69 EUR
50+2.26 EUR
100+2.21 EUR
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BSS169H6327XTSA1 BSS169H6327XTSA1 INFINEON TECHNOLOGIES BSS169H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.17A
Kind of channel: depletion
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12Ω
Power dissipation: 0.36W
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.79 EUR
165+0.51 EUR
233+0.37 EUR
271+0.31 EUR
329+0.26 EUR
500+0.23 EUR
1000+0.19 EUR
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BC850CWH6327 BC850CWH6327 INFINEON TECHNOLOGIES Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2905 Stücke:
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417+0.2 EUR
582+0.14 EUR
882+0.096 EUR
1036+0.082 EUR
1163+0.073 EUR
1309+0.065 EUR
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IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES IR2113SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 84 Stücke:
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15+5.7 EUR
20+4.34 EUR
21+4.15 EUR
25+3.95 EUR
45+3.75 EUR
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IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES IR2113STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 1029 Stücke:
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22+3.93 EUR
26+3.36 EUR
28+3.05 EUR
32+2.69 EUR
50+2.5 EUR
100+2.37 EUR
1000+2.17 EUR
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IRF5305PBF IRF5305PBF INFINEON TECHNOLOGIES irf5305.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1136 Stücke:
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43+2.02 EUR
70+1.21 EUR
81+1.05 EUR
93+0.92 EUR
104+0.82 EUR
500+0.73 EUR
1000+0.68 EUR
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IRF5305STRLPBF IRF5305STRLPBF INFINEON TECHNOLOGIES irf5305spbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1837 Stücke:
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28+3.06 EUR
34+2.55 EUR
39+2.23 EUR
56+1.54 EUR
100+1.31 EUR
250+1.14 EUR
500+1.06 EUR
800+1 EUR
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IRF530NPBF IRF530NPBF INFINEON TECHNOLOGIES irf530n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
auf Bestellung 2599 Stücke:
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74+1.15 EUR
90+0.95 EUR
99+0.87 EUR
110+0.77 EUR
129+0.65 EUR
250+0.56 EUR
500+0.51 EUR
1000+0.48 EUR
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IRF530NSTRLPBF IRF530NSTRLPBF INFINEON TECHNOLOGIES irf530nspbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 641 Stücke:
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31+2.8 EUR
50+1.74 EUR
70+1.21 EUR
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CY8CKIT-042 CY8CKIT-042 INFINEON TECHNOLOGIES Infineon-CY8CKIT-042_PSoC_4_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eeec6a57e1e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Arduino
Type of development kit: Cypress
Connection: USB B mini
Kind of module: evaluation board
Application - series/manufacturer: Arduino
Produkt ist nicht verfügbar
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ICE2QS03G ICE2QS03G INFINEON TECHNOLOGIES ICE2QS03G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Operating voltage: 10.5...25V DC
Topology: flyback
Mounting: SMD
Breakdown voltage: 500V
Input voltage: 80...265V
Operating temperature: -40...130°C
Duty cycle factor: 0...50%
Application: SMPS
Case: PG-DSO-8
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 39...65kHz
auf Bestellung 1824 Stücke:
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32+2.7 EUR
49+1.75 EUR
54+1.59 EUR
100+1.39 EUR
250+1.27 EUR
500+1.18 EUR
1000+1.15 EUR
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IRF1010EPBF IRF1010EPBF INFINEON TECHNOLOGIES irf1010e.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.62 EUR
75+1.14 EUR
84+1.02 EUR
100+0.95 EUR
250+0.88 EUR
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IRF1010EZPBF IRF1010EZPBF INFINEON TECHNOLOGIES irf1010ez.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Technology: HEXFET®
Power dissipation: 140W
Gate charge: 58nC
Polarisation: unipolar
Drain current: 84A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
auf Bestellung 23 Stücke:
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23+3.69 EUR
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BSP452 BSP452 INFINEON TECHNOLOGIES BSP452.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Output voltage: 40V
Technology: Classic PROFET
auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.64 EUR
28+3.09 EUR
100+2.43 EUR
250+2.19 EUR
500+1.99 EUR
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IRFB4110PBF IRFB4110PBF INFINEON TECHNOLOGIES irfb4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2153DPBF IRS2153DPBF INFINEON TECHNOLOGIES irs2153d.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Supply voltage: 10.1...16.8V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 0.12µs
Power: 1W
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
auf Bestellung 22 Stücke:
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21+4.22 EUR
22+3.87 EUR
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IRS2153DSPBF IRS2153DSPBF INFINEON TECHNOLOGIES irs2153d.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Power: 625mW
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 65 Stücke:
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28+3.12 EUR
32+2.69 EUR
36+2.37 EUR
37+2.31 EUR
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IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES IKP10N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.38 EUR
46+1.86 EUR
53+1.61 EUR
72+1.19 EUR
100+1.06 EUR
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES IGP30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Manufacturer series: H3
Collector-emitter voltage: 600V
Power dissipation: 187W
Technology: TRENCHSTOP™ 5
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.28 EUR
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IRF1404LPBF IRF1404LPBF INFINEON TECHNOLOGIES irf1404spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 13 Stücke:
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13+6.56 EUR
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IRF1404PBF IRF1404PBF INFINEON TECHNOLOGIES irf1404.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4mΩ
Gate charge: 160nC
Gate-source voltage: ±20V
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43+2.01 EUR
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61+1.39 EUR
100+1.34 EUR
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IRF1404STRLPBF IRF1404STRLPBF INFINEON TECHNOLOGIES irf1404spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF1404STRRPBF IRF1404STRRPBF INFINEON TECHNOLOGIES irf1404spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF1404ZPBF IRF1404ZPBF INFINEON TECHNOLOGIES irf1404z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.7mΩ
Gate charge: 0.1µC
Gate-source voltage: ±20V
auf Bestellung 755 Stücke:
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46+1.87 EUR
65+1.31 EUR
68+1.26 EUR
71+1.21 EUR
100+1.15 EUR
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IRF1404ZSTRLPBF IRF1404ZSTRLPBF INFINEON TECHNOLOGIES IRF1404ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 458 Stücke:
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25+3.4 EUR
32+2.73 EUR
36+2.38 EUR
50+1.74 EUR
100+1.57 EUR
250+1.51 EUR
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AUIRF1404STRL AUIRF1404STRL INFINEON TECHNOLOGIES auirf1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF1404ZSTRL AUIRF1404ZSTRL INFINEON TECHNOLOGIES auirf1404z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF520NPBF IRF520NPBF INFINEON TECHNOLOGIES irf520n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 222 Stücke:
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71+1.21 EUR
141+0.61 EUR
147+0.58 EUR
153+0.56 EUR
160+0.54 EUR
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IRF540NPBF IRF540NPBF INFINEON TECHNOLOGIES irf540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1558 Stücke:
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47+1.82 EUR
75+1.13 EUR
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118+0.73 EUR
135+0.63 EUR
500+0.57 EUR
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IGP20N65F5XKSA1 IGP20N65F5XKSA1 INFINEON TECHNOLOGIES IGP20N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Manufacturer series: F5
Collector-emitter voltage: 650V
auf Bestellung 123 Stücke:
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22+3.96 EUR
31+2.82 EUR
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IGP20N65H5XKSA1 IGP20N65H5XKSA1 INFINEON TECHNOLOGIES IGP20N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 169ns
Gate-emitter voltage: ±20V
Collector current: 21A
Manufacturer series: H5
Collector-emitter voltage: 650V
auf Bestellung 138 Stücke:
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60+1.43 EUR
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES IKP20N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Gate-emitter voltage: ±20V
Collector current: 20A
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate charge: 48nC
auf Bestellung 97 Stücke:
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22+3.93 EUR
35+2.43 EUR
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SPP20N60CFD SPP20N60CFD INFINEON TECHNOLOGIES SPP20N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP20N60S5 SPP20N60S5 INFINEON TECHNOLOGIES SPP20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 245 Stücke:
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18+4.74 EUR
23+3.77 EUR
25+3.51 EUR
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SPP20N65C3 SPP20N65C3 INFINEON TECHNOLOGIES SPx20N65C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
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11+8.43 EUR
12+7.59 EUR
13+6.7 EUR
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IRF3205PBF IRF3205PBF INFINEON TECHNOLOGIES irf3205.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3205STRLPBF IRF3205STRLPBF INFINEON TECHNOLOGIES irf3205spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Mounting: SMD
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: reel
Case: D2PAK
auf Bestellung 1710 Stücke:
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28+3.09 EUR
44+1.95 EUR
58+1.48 EUR
100+1.33 EUR
250+1.19 EUR
500+1.07 EUR
800+1.02 EUR
1600+0.95 EUR
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IRF3205STRRPBF IRF3205STRRPBF INFINEON TECHNOLOGIES irf3205spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF3205ZPBF IRF3205ZPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Mounting: THT
Power dissipation: 170W
Gate charge: 110nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 6.5mΩ
auf Bestellung 595 Stücke:
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59+1.46 EUR
66+1.31 EUR
69+1.25 EUR
73+1.17 EUR
100+1.11 EUR
200+1.05 EUR
250+1.02 EUR
500+0.96 EUR
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IRF3205ZSTRLPBF IRF3205ZSTRLPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Mounting: SMD
Pulsed drain current: 440A
Power dissipation: 170W
Gate charge: 110nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: D2PAK
On-state resistance: 6.5mΩ
auf Bestellung 23 Stücke:
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23+3.69 EUR
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AUIRF3205Z AUIRF3205Z INFINEON TECHNOLOGIES auirf3205z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 76nC
On-state resistance: 6.5mΩ
Produkt ist nicht verfügbar
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2N7002DWH6327XTSA1 2N7002DWH6327XTSA1 INFINEON TECHNOLOGIES 2N7002DWH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10149 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
332+0.26 EUR
461+0.19 EUR
532+0.15 EUR
729+0.12 EUR
1000+0.1 EUR
3000+0.082 EUR
6000+0.073 EUR
9000+0.068 EUR
Mindestbestellmenge: 250 Stücke
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SPW47N65C3FKSA1 SPW47N65C3FKSA1 INFINEON TECHNOLOGIES SPW47N65C3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLML2244TRPBF IRLML2244TRPBF INFINEON TECHNOLOGIES irlml2244pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 21965 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
225+0.38 EUR
388+0.21 EUR
532+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
9000+0.11 EUR
21000+0.1 EUR
Mindestbestellmenge: 152 Stücke
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BAV70E6327HTSA1 BAV70E6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
382+0.23 EUR
571+0.15 EUR
676+0.13 EUR
828+0.1 EUR
944+0.09 EUR
1092+0.077 EUR
1300+0.075 EUR
2500+0.069 EUR
Mindestbestellmenge: 250 Stücke
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IRF4905LPBF IRF4905LPBF INFINEON TECHNOLOGIES irf4905spbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
On-state resistance: 20mΩ
Gate charge: 0.12µC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF4905PBF IRF4905PBF INFINEON TECHNOLOGIES irf4905.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 20mΩ
Gate charge: 0.12µC
Gate-source voltage: ±20V
auf Bestellung 2992 Stücke:
Lieferzeit 14-21 Tag (e)
28+3.15 EUR
40+2.17 EUR
44+1.94 EUR
50+1.78 EUR
100+1.67 EUR
250+1.55 EUR
500+1.46 EUR
1000+1.39 EUR
2000+1.34 EUR
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IRF4905STRLPBF IRF4905STRLPBF INFINEON TECHNOLOGIES IRF4905STRLPBF.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3174 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.46 EUR
29+3.03 EUR
33+2.62 EUR
50+2.34 EUR
100+2.13 EUR
250+1.87 EUR
500+1.71 EUR
800+1.7 EUR
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IRF4905STRRPBF INFINEON TECHNOLOGIES irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IGW25N120H3FKSA1 IGW25N120H3FKSA1 INFINEON TECHNOLOGIES IGW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.53 EUR
16+5.41 EUR
Mindestbestellmenge: 14 Stücke
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IKW25N120T2FKSA1 IKW25N120T2FKSA1 INFINEON TECHNOLOGIES IKW25N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IRFP260MPBF irfp260mpbf.pdf
IRFP260MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
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IRFP260NPBF irfp260n.pdf
IRFP260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 800 Stücke:
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100+3.2 EUR
400+2.73 EUR
500+2.65 EUR
800+2.52 EUR
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IRFP2907PBF irfp2907.pdf
IRFP2907PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
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14+6.53 EUR
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125+3.88 EUR
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IRF1407PBF description irf1407pbf.pdf
IRF1407PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Kind of package: tube
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39+2.21 EUR
44+1.95 EUR
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IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
IRF1407STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKA10N65ET6XKSA2 IKA10N65ET6.pdf
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 9A
Manufacturer series: T6
Collector-emitter voltage: 650V
Gate charge: 27nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 42.5A
auf Bestellung 53 Stücke:
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40+2.18 EUR
43+2.01 EUR
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IGB15N65S5ATMA1 IGB15N65S5.pdf
IGB15N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 650V
Power dissipation: 52.5W
Gate charge: 38nC
Produkt ist nicht verfügbar
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IKB15N65EH5ATMA1 IKB15N65EH5.pdf
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 45A
Turn-on time: 33ns
Turn-off time: 172ns
Gate-emitter voltage: ±20V
Collector current: 18A
Collector-emitter voltage: 650V
Power dissipation: 52.5W
Gate charge: 38nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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SPW20N60C3 SPW20N60C3.pdf
SPW20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 567 Stücke:
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23+3.87 EUR
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28+3.08 EUR
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SPP20N60C3 spp20n60c3.pdf
SPP20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 734 Stücke:
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BSS169H6327XTSA1 BSS169H6327XTSA1.pdf
BSS169H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.17A
Kind of channel: depletion
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12Ω
Power dissipation: 0.36W
auf Bestellung 1830 Stücke:
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109+0.79 EUR
165+0.51 EUR
233+0.37 EUR
271+0.31 EUR
329+0.26 EUR
500+0.23 EUR
1000+0.19 EUR
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BC850CWH6327
BC850CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2905 Stücke:
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417+0.2 EUR
582+0.14 EUR
882+0.096 EUR
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1163+0.073 EUR
1309+0.065 EUR
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IR2113SPBF description IR2113SPBF.pdf
IR2113SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 84 Stücke:
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IR2113STRPBF IR2113STRPBF.pdf
IR2113STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Power: 1.25W
Turn-off time: 111ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -2...2A
auf Bestellung 1029 Stücke:
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IRF5305PBF irf5305.pdf
IRF5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1136 Stücke:
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43+2.02 EUR
70+1.21 EUR
81+1.05 EUR
93+0.92 EUR
104+0.82 EUR
500+0.73 EUR
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IRF5305STRLPBF description irf5305spbf.pdf
IRF5305STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1837 Stücke:
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28+3.06 EUR
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39+2.23 EUR
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250+1.14 EUR
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800+1 EUR
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IRF530NPBF irf530n.pdf
IRF530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
auf Bestellung 2599 Stücke:
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74+1.15 EUR
90+0.95 EUR
99+0.87 EUR
110+0.77 EUR
129+0.65 EUR
250+0.56 EUR
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IRF530NSTRLPBF description irf530nspbf.pdf
IRF530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 641 Stücke:
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31+2.8 EUR
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70+1.21 EUR
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CY8CKIT-042 Infineon-CY8CKIT-042_PSoC_4_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eeec6a57e1e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-042
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Arduino
Type of development kit: Cypress
Connection: USB B mini
Kind of module: evaluation board
Application - series/manufacturer: Arduino
Produkt ist nicht verfügbar
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ICE2QS03G ICE2QS03G.pdf
ICE2QS03G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Operating voltage: 10.5...25V DC
Topology: flyback
Mounting: SMD
Breakdown voltage: 500V
Input voltage: 80...265V
Operating temperature: -40...130°C
Duty cycle factor: 0...50%
Application: SMPS
Case: PG-DSO-8
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 39...65kHz
auf Bestellung 1824 Stücke:
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32+2.7 EUR
49+1.75 EUR
54+1.59 EUR
100+1.39 EUR
250+1.27 EUR
500+1.18 EUR
1000+1.15 EUR
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IRF1010EPBF description irf1010e.pdf
IRF1010EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 352 Stücke:
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53+1.62 EUR
75+1.14 EUR
84+1.02 EUR
100+0.95 EUR
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IRF1010EZPBF description irf1010ez.pdf
IRF1010EZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Technology: HEXFET®
Power dissipation: 140W
Gate charge: 58nC
Polarisation: unipolar
Drain current: 84A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
auf Bestellung 23 Stücke:
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23+3.69 EUR
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BSP452 BSP452.pdf
BSP452
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Output voltage: 40V
Technology: Classic PROFET
auf Bestellung 952 Stücke:
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19+4.64 EUR
28+3.09 EUR
100+2.43 EUR
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IRFB4110PBF irfb4110pbf.pdf
IRFB4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2153DPBF description irs2153d.pdf
IRS2153DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Supply voltage: 10.1...16.8V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 0.12µs
Power: 1W
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
auf Bestellung 22 Stücke:
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21+4.22 EUR
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IRS2153DSPBF description irs2153d.pdf
IRS2153DSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Power: 625mW
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 65 Stücke:
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28+3.12 EUR
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36+2.37 EUR
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IKP10N60TXKSA1 IKP10N60T.pdf
IKP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 220 Stücke:
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36+2.38 EUR
46+1.86 EUR
53+1.61 EUR
72+1.19 EUR
100+1.06 EUR
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IGP30N60H3XKSA1 IGP30N60H3-DTE.pdf
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Manufacturer series: H3
Collector-emitter voltage: 600V
Power dissipation: 187W
Technology: TRENCHSTOP™ 5
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
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IRF1404LPBF irf1404spbf.pdf
IRF1404LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
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IRF1404PBF irf1404.pdf
IRF1404PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4mΩ
Gate charge: 160nC
Gate-source voltage: ±20V
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.3 EUR
43+2.01 EUR
54+1.59 EUR
61+1.39 EUR
100+1.34 EUR
250+1.27 EUR
500+1.23 EUR
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IRF1404STRLPBF irf1404spbf.pdf
IRF1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.12 EUR
33+2.64 EUR
36+2.4 EUR
50+2.13 EUR
100+1.94 EUR
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IRF1404STRRPBF irf1404spbf.pdf
IRF1404STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1404ZPBF irf1404z.pdf
IRF1404ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.7mΩ
Gate charge: 0.1µC
Gate-source voltage: ±20V
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.87 EUR
65+1.31 EUR
68+1.26 EUR
71+1.21 EUR
100+1.15 EUR
500+1.04 EUR
Mindestbestellmenge: 46 Stücke
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IRF1404ZSTRLPBF IRF1404ZSTRLPBF.pdf
IRF1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.4 EUR
32+2.73 EUR
36+2.38 EUR
50+1.74 EUR
100+1.57 EUR
250+1.51 EUR
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AUIRF1404STRL auirf1404s.pdf
AUIRF1404STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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AUIRF1404ZSTRL auirf1404z.pdf
AUIRF1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF520NPBF irf520n.pdf
IRF520NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
71+1.21 EUR
141+0.61 EUR
147+0.58 EUR
153+0.56 EUR
160+0.54 EUR
Mindestbestellmenge: 71 Stücke
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IRF540NPBF irf540n.pdf
IRF540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1558 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.82 EUR
75+1.13 EUR
94+0.92 EUR
118+0.73 EUR
135+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 47 Stücke
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IGP20N65F5XKSA1 IGP20N65F5-DTE.pdf
IGP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Manufacturer series: F5
Collector-emitter voltage: 650V
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
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22+3.96 EUR
31+2.82 EUR
50+2.21 EUR
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IGP20N65H5XKSA1 IGP20N65H5.pdf
IGP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 169ns
Gate-emitter voltage: ±20V
Collector current: 21A
Manufacturer series: H5
Collector-emitter voltage: 650V
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
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30+2.86 EUR
60+1.43 EUR
100+1.34 EUR
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IKP20N65H5XKSA1 IKP20N65H5-DTE.pdf
IKP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Gate-emitter voltage: ±20V
Collector current: 20A
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate charge: 48nC
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.93 EUR
35+2.43 EUR
Mindestbestellmenge: 22 Stücke
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SPP20N60CFD SPP20N60CFD.pdf
SPP20N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP20N60S5 description SPP20N60S5.pdf
SPP20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.21 EUR
18+4.74 EUR
23+3.77 EUR
25+3.51 EUR
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SPP20N65C3 SPx20N65C3.pdf
SPP20N65C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.43 EUR
12+7.59 EUR
13+6.7 EUR
Mindestbestellmenge: 11 Stücke
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IRF3205PBF irf3205.pdf
IRF3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3205STRLPBF irf3205spbf.pdf
IRF3205STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Mounting: SMD
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: reel
Case: D2PAK
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.09 EUR
44+1.95 EUR
58+1.48 EUR
100+1.33 EUR
250+1.19 EUR
500+1.07 EUR
800+1.02 EUR
1600+0.95 EUR
Mindestbestellmenge: 28 Stücke
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IRF3205STRRPBF irf3205spbf.pdf
IRF3205STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF3205ZPBF description irf3205zpbf.pdf
IRF3205ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Mounting: THT
Power dissipation: 170W
Gate charge: 110nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 6.5mΩ
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.46 EUR
66+1.31 EUR
69+1.25 EUR
73+1.17 EUR
100+1.11 EUR
200+1.05 EUR
250+1.02 EUR
500+0.96 EUR
Mindestbestellmenge: 59 Stücke
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IRF3205ZSTRLPBF irf3205zpbf.pdf
IRF3205ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Mounting: SMD
Pulsed drain current: 440A
Power dissipation: 170W
Gate charge: 110nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: D2PAK
On-state resistance: 6.5mΩ
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.69 EUR
Mindestbestellmenge: 23 Stücke
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AUIRF3205Z auirf3205z.pdf
AUIRF3205Z
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 76nC
On-state resistance: 6.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2N7002DWH6327XTSA1 2N7002DWH6327XTSA1.pdf
2N7002DWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10149 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
332+0.26 EUR
461+0.19 EUR
532+0.15 EUR
729+0.12 EUR
1000+0.1 EUR
3000+0.082 EUR
6000+0.073 EUR
9000+0.068 EUR
Mindestbestellmenge: 250 Stücke
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SPW47N65C3FKSA1 SPW47N65C3F.pdf
SPW47N65C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLML2244TRPBF irlml2244pbf.pdf
IRLML2244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 21965 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
225+0.38 EUR
388+0.21 EUR
532+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
9000+0.11 EUR
21000+0.1 EUR
Mindestbestellmenge: 152 Stücke
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BAV70E6327HTSA1 BAV70E6327HTSA1.pdf
BAV70E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
382+0.23 EUR
571+0.15 EUR
676+0.13 EUR
828+0.1 EUR
944+0.09 EUR
1092+0.077 EUR
1300+0.075 EUR
2500+0.069 EUR
Mindestbestellmenge: 250 Stücke
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IRF4905LPBF description irf4905spbf.pdf
IRF4905LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
On-state resistance: 20mΩ
Gate charge: 0.12µC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905PBF irf4905.pdf
IRF4905PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 20mΩ
Gate charge: 0.12µC
Gate-source voltage: ±20V
auf Bestellung 2992 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.15 EUR
40+2.17 EUR
44+1.94 EUR
50+1.78 EUR
100+1.67 EUR
250+1.55 EUR
500+1.46 EUR
1000+1.39 EUR
2000+1.34 EUR
Mindestbestellmenge: 28 Stücke
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IRF4905STRLPBF description IRF4905STRLPBF.pdf
IRF4905STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3174 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.46 EUR
29+3.03 EUR
33+2.62 EUR
50+2.34 EUR
100+2.13 EUR
250+1.87 EUR
500+1.71 EUR
800+1.7 EUR
Mindestbestellmenge: 20 Stücke
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IRF4905STRRPBF irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IGW25N120H3FKSA1 IGW25N120H3-DTE.pdf
IGW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.53 EUR
16+5.41 EUR
Mindestbestellmenge: 14 Stücke
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IKW25N120T2FKSA1 IKW25N120T2.pdf
IKW25N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.27 EUR
14+6.16 EUR
20+5.5 EUR
30+5.43 EUR
Mindestbestellmenge: 12 Stücke
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