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BAT1502ELSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-02ELS-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895e8f04e77 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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BTN8982TA BTN8982TA INFINEON TECHNOLOGIES BTN8982TA-DTE.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Technology: NovalithIC™
Case: PG-TO263-7
Kind of package: reel; tape
Mounting: SMD
Output current: -44...50A
Operating temperature: -40...150°C
On-state resistance: 10mΩ
Number of channels: 1
Operating voltage: 5.5...40V DC
Kind of integrated circuit: IMC; motor controller
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BTN8982TAAUMA1 INFINEON TECHNOLOGIES BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
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BCW68FE6327 BCW68FE6327 INFINEON TECHNOLOGIES BCW68FE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
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BCW68HE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
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BCW68GE6327 INFINEON TECHNOLOGIES BCW68FE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
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IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES IPP60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BAS5202VH6327XTSA1 BAS5202VH6327XTSA1 INFINEON TECHNOLOGIES BAS5202VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 0.5W
Max. forward voltage: 0.6V
Load current: 0.75A
Max. forward impulse current: 2A
Max. off-state voltage: 45V
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BAS3010S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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BAS3010S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 1A
Max. forward impulse current: 4A
Max. off-state voltage: 30V
Max. forward voltage: 0.65V
Leakage current: 0.3mA
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IPA80R310CEXKSA2 IPA80R310CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16.7A; 35W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16.7A
Power dissipation: 35W
Case: TO220-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 91nC
Kind of channel: enhancement
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IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES IPP60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Drain current: 23.8A
Power dissipation: 176W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
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39+1.84 EUR
41+1.77 EUR
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IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES IPP60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R165CPATMA1 IPB60R165CPATMA1 INFINEON TECHNOLOGIES IPB60R165CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhancement
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IPI60R165CPAKSA1 IPI60R165CPAKSA1 INFINEON TECHNOLOGIES IPI60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhancement
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IPB65R310CFDATMA1 IPB65R310CFDATMA1 INFINEON TECHNOLOGIES IPB65R310CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
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IPB65R420CFDATMA1 IPB65R420CFDATMA1 INFINEON TECHNOLOGIES IPB65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 310W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
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ISS17EP06LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISS17EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0731173673a6 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; 360mW; SOT23
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.79nC
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Polarisation: unipolar
Kind of channel: enhancement
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IGW100N60H3FKSA1 IGW100N60H3FKSA1 INFINEON TECHNOLOGIES IGW100N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 714W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES BSL606SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
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97+0.74 EUR
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169+0.42 EUR
191+0.37 EUR
500+0.28 EUR
1000+0.27 EUR
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IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES irfr2407pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
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IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES irf9335pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES irf9358pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES irf9952pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
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IDV20E65D1XKSA1 INFINEON TECHNOLOGIES Infineon-IDV20E65D1-DS-v02_01-EN.pdf?fileId=5546d4624923e78d0149329dc06a76e7 Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
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IRS2336DSTRPBF INFINEON TECHNOLOGIES Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET; 10÷20V
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
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IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
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IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFR2405TRLPBF IRFR2405TRLPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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DZ540N26K DZ540N26K INFINEON TECHNOLOGIES DZ540N26K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
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DD540N26K DD540N26K INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.48V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
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DZ540N22K DZ540N22K INFINEON TECHNOLOGIES DZ540N22K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
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IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
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IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES IPW60R041P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRF7495TRPBF IRF7495TRPBF INFINEON TECHNOLOGIES irf7495pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES BFR360F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 6V
Collector current: 35mA
Power dissipation: 0.21W
Case: TSFP-3
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
275+0.26 EUR
315+0.23 EUR
376+0.19 EUR
463+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 228 Stücke
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IPA50R399CPXKSA1 IPA50R399CPXKSA1 INFINEON TECHNOLOGIES IPA50R399CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Power dissipation: 8.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR402RE6327 BCR402RE6327 INFINEON TECHNOLOGIES BCR402R.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
Mindestbestellmenge: 35 Stücke
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BCR402RE6327HTSA1 INFINEON TECHNOLOGIES bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
Produkt ist nicht verfügbar
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BSZ075N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ075N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 40A
Power dissipation: 69W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IRFR5410TRRPBF IRFR5410TRRPBF INFINEON TECHNOLOGIES irfr5410pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IPL60R065P7AUMA1 IPL60R065P7AUMA1 INFINEON TECHNOLOGIES IPL60R065P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 201W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 201W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 INFINEON TECHNOLOGIES IPL65R1K5C6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 26.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6 Stücke
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IPL65R070C7AUMA1 IPL65R070C7AUMA1 INFINEON TECHNOLOGIES IPL65R070C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 169W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 169W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R130C7AUMA1 IPL65R130C7AUMA1 INFINEON TECHNOLOGIES IPL65R130C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 102W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL65R195C7AUMA1 IPL65R195C7AUMA1 INFINEON TECHNOLOGIES IPL65R195C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 75W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 75W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.195Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R210CFDAUMA1 IPL65R210CFDAUMA1 INFINEON TECHNOLOGIES IPL65R210CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R230C7AUMA1 IPL65R230C7AUMA1 INFINEON TECHNOLOGIES IPL65R230C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 67W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 67W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R310E6AUMA1 IPL65R310E6AUMA1 INFINEON TECHNOLOGIES IPL65R310E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 104W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R340CFDAUMA1 IPL65R340CFDAUMA1 INFINEON TECHNOLOGIES IPL65R340CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.9A
Power dissipation: 104.2W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R420E6AUMA1 IPL65R420E6AUMA1 INFINEON TECHNOLOGIES IPL65R420E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R460CFDAUMA1 IPL65R460CFDAUMA1 INFINEON TECHNOLOGIES IPL65R460CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R660E6AUMA1 IPL65R660E6AUMA1 INFINEON TECHNOLOGIES IPL65R660E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 63W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 63W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R045C7ATMA1 IPB65R045C7ATMA1 INFINEON TECHNOLOGIES IPB65R045C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R045C7ATMA2 INFINEON TECHNOLOGIES Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: D2PAK; TO263
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 93nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB65R065C7ATMA1 IPB65R065C7ATMA1 INFINEON TECHNOLOGIES IPB65R065C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT1502ELSE6327XTSA1 Infineon-BAT15-02ELS-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895e8f04e77
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BTN8982TA BTN8982TA-DTE.pdf
BTN8982TA
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Technology: NovalithIC™
Case: PG-TO263-7
Kind of package: reel; tape
Mounting: SMD
Output current: -44...50A
Operating temperature: -40...150°C
On-state resistance: 10mΩ
Number of channels: 1
Operating voltage: 5.5...40V DC
Kind of integrated circuit: IMC; motor controller
Produkt ist nicht verfügbar
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BTN8982TAAUMA1 BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1000+4.93 EUR
Mindestbestellmenge: 1000 Stücke
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BCW68FE6327 BCW68FE6327.pdf
BCW68FE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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BCW68HE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCW68GE6327 BCW68FE6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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IPP60R160C6XKSA1 IPP60R160C6-DTE.pdf
IPP60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS5202VH6327XTSA1 BAS5202VH6327XTSA1.pdf
BAS5202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 0.5W
Max. forward voltage: 0.6V
Load current: 0.75A
Max. forward impulse current: 2A
Max. off-state voltage: 45V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
90+0.8 EUR
Mindestbestellmenge: 90 Stücke
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BAS3010S02LRHE6327XTSA1 bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAS3010S02LRHE6327XTSA1 bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 1A
Max. forward impulse current: 4A
Max. off-state voltage: 30V
Max. forward voltage: 0.65V
Leakage current: 0.3mA
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15000+0.15 EUR
Mindestbestellmenge: 15000 Stücke
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IPA80R310CEXKSA2 Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45
IPA80R310CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16.7A; 35W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16.7A
Power dissipation: 35W
Case: TO220-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 91nC
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
20+3.72 EUR
31+2.37 EUR
50+1.9 EUR
Mindestbestellmenge: 20 Stücke
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IPP60R160P6XKSA1 IPP60R160P6-DTE.pdf
IPP60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Drain current: 23.8A
Power dissipation: 176W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
35+2.04 EUR
37+1.94 EUR
39+1.84 EUR
41+1.77 EUR
50+1.7 EUR
Mindestbestellmenge: 35 Stücke
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IPP60R165CPXKSA1 IPP60R165CP-DTE.pdf
IPP60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
21+3.55 EUR
Mindestbestellmenge: 21 Stücke
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IPB60R165CPATMA1 IPB60R165CP-DTE.pdf
IPB60R165CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI60R165CPAKSA1 IPI60R165CP-DTE.pdf
IPI60R165CPAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R310CFDATMA1 IPB65R310CFD-DTE.pdf
IPB65R310CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R420CFDATMA1 IPB65R420CFD-DTE.pdf
IPB65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 310W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISS17EP06LMXTSA1 Infineon-ISS17EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0731173673a6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; 360mW; SOT23
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.79nC
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IGW100N60H3FKSA1 IGW100N60H3-DTE.pdf
IGW100N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 714W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+35.75 EUR
Mindestbestellmenge: 2 Stücke
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1.pdf
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
97+0.74 EUR
127+0.57 EUR
169+0.42 EUR
191+0.37 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 97 Stücke
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IRFR2407TRPBF irfr2407pbf.pdf
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
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IRF9335TRPBF irf9335pbf.pdf
IRF9335TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9358TRPBF irf9358pbf.pdf
IRF9358TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF9952TRPBF irf9952pbf.pdf
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IDV20E65D1XKSA1 Infineon-IDV20E65D1-DS-v02_01-EN.pdf?fileId=5546d4624923e78d0149329dc06a76e7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IRS2336DSTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET; 10÷20V
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR2405TRLPBF irfr2405pbf.pdf
IRFR2405TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DZ540N26K DZ540N26K.pdf
DZ540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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DD540N26K DD540N2xK.pdf
DD540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.48V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Produkt ist nicht verfügbar
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DZ540N22K DZ540N22K.pdf
DZ540N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2500+1.04 EUR
Mindestbestellmenge: 2500 Stücke
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IPW60R041P6FKSA1 IPW60R041P6-DTE.pdf
IPW60R041P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7495TRPBF irf7495pbf.pdf
IRF7495TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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BFR360FH6327XTSA1 BFR360F.pdf
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 6V
Collector current: 35mA
Power dissipation: 0.21W
Case: TSFP-3
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
228+0.31 EUR
275+0.26 EUR
315+0.23 EUR
376+0.19 EUR
463+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 228 Stücke
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IPA50R399CPXKSA1 IPA50R399CP-DTE.pdf
IPA50R399CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Power dissipation: 8.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR402RE6327 BCR402R.pdf
BCR402RE6327
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
35+2.04 EUR
Mindestbestellmenge: 35 Stücke
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BCR402RE6327HTSA1 bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
Produkt ist nicht verfügbar
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BSZ075N08NS5ATMA1 BSZ075N08NS5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 40A
Power dissipation: 69W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFR5410TRRPBF irfr5410pbf.pdf
IRFR5410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPL60R065P7AUMA1 IPL60R065P7.pdf
IPL60R065P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 201W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 201W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R1K5C6SATMA1 IPL65R1K5C6S-DTE.pdf
IPL65R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 26.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
6+11.91 EUR
Mindestbestellmenge: 6 Stücke
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IPL65R070C7AUMA1 IPL65R070C7-DTE.pdf
IPL65R070C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 169W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 169W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R130C7AUMA1 IPL65R130C7-DTE.pdf
IPL65R130C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 102W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL65R195C7AUMA1 IPL65R195C7-DTE.pdf
IPL65R195C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 75W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 75W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.195Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R210CFDAUMA1 IPL65R210CFD-DTE.pdf
IPL65R210CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R230C7AUMA1 IPL65R230C7-DTE.pdf
IPL65R230C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 67W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 67W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R310E6AUMA1 IPL65R310E6-DTE.pdf
IPL65R310E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 104W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R340CFDAUMA1 IPL65R340CFD-DTE.pdf
IPL65R340CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.9A
Power dissipation: 104.2W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R420E6AUMA1 IPL65R420E6-DTE.pdf
IPL65R420E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R460CFDAUMA1 IPL65R460CFD-DTE.pdf
IPL65R460CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R660E6AUMA1 IPL65R660E6-DTE.pdf
IPL65R660E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 63W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 63W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R045C7ATMA1 IPB65R045C7-DTE.pdf
IPB65R045C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R045C7ATMA2 Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: D2PAK; TO263
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 93nC
Produkt ist nicht verfügbar
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IPB65R065C7ATMA1 IPB65R065C7-DTE.pdf
IPB65R065C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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