Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129159) > Seite 2070 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IKW75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 164nC Kind of package: tube Turn-on time: 86ns Turn-off time: 185ns Technology: TRENCHSTOP™ 5 Features of semiconductor devices: integrated anti-parallel diode |
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IKZ75N65EL5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 268W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 436nC Kind of package: tube Turn-on time: 143ns Turn-off time: 325ns Technology: TRENCHSTOP™ 5 Features of semiconductor devices: integrated anti-parallel diode |
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IKZ75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 197W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 164nC Kind of package: tube Turn-on time: 71ns Turn-off time: 427ns Technology: TRENCHSTOP™ 5 Features of semiconductor devices: integrated anti-parallel diode |
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SPW35N60CFD | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21.6A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
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IRF540ZPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 92W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 26.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 993 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9530NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 877 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL014NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 1.9A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IKD10N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 64nC Turn-on time: 24ns Kind of package: reel; tape Turn-off time: 331ns Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 600V Technology: TRENCHSTOP™ RC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 30A |
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IKD10N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 64nC Turn-on time: 27ns Kind of package: reel; tape Turn-off time: 186ns Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 600V Technology: TRENCHSTOP™ RC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 30A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLU024NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 38W Case: IPAK Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 532 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612 | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Type of relay: solid state Contacts configuration: SPST-NO Control current: 5...25mA Max. operating current: 2.4A Switched voltage: -60...60V DC; 0...60V AC Manufacturer series: PVG612 Relay variant: MOSFET On-state resistance: 0.15Ω Mounting: THT Case: DIP6 Operate time: 2ms Release time: 0.5ms Operating temperature: -40...85°C |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612ASPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A Case: DIP6 On-state resistance: 0.1Ω Mounting: SMT Type of relay: solid state Manufacturer series: PVG612 Relay variant: MOSFET Control voltage: 1.2V DC Operating temperature: -40...85°C Contacts configuration: SPST-NO Control current: 5...25mA Operate time: 3.5ms Switched voltage: -60...60V DC; 0...60V AC Release time: 0.5ms Max. operating current: 4A |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612S | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Manufacturer series: PVG612 Relay variant: MOSFET Contacts configuration: SPST-NO Control current: 5...25mA Operate time: 2ms Switched voltage: -60...60V DC; 0...60V AC Release time: 0.5ms Max. operating current: 2.4A On-state resistance: 0.15Ω Type of relay: solid state |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR93AE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
auf Bestellung 10337 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR93AWH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
auf Bestellung 1128 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44ZSTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 36A Power dissipation: 80W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLR024NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 10195 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML2030TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
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IRLML2502TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
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IRF2807PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 82A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 106.7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1207 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2807STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 82A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2807STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 82A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF2807ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 89A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21844SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Integrated circuit features: charge pump; dead time; integrated bootstrap functionality |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21844STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IR2184PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Integrated circuit features: charge pump; dead time; integrated bootstrap functionality |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2184SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP Integrated circuit features: charge pump; dead time; integrated bootstrap functionality |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 270ns Protection: short circuit protection SCP; undervoltage UVP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAT60AE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 10V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 5A Power dissipation: 1.35W |
auf Bestellung 11451 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS452R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output voltage: 62V Output current: 1.8A Case: PG-TO252-5-11 Mounting: SMD Number of channels: 1 Supply voltage: 6...52V DC Kind of output: N-Channel Technology: Classic PROFET On-state resistance: 0.2Ω |
auf Bestellung 1905 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double x2 Features of semiconductor devices: ultrafast switching Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Power dissipation: 0.25W |
auf Bestellung 1220 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAV99SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series x2 Features of semiconductor devices: ultrafast switching Case: SOT363 Max. forward voltage: 1.25V Power dissipation: 0.25W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2092STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...18V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape Frequency: 800kHz |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP064NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 98A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 113.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 508 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3206PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3415PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 872 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BCP5216H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223 Mounting: SMD Collector-emitter voltage: 60V Case: SOT223 Polarisation: bipolar Frequency: 125MHz Type of transistor: PNP Collector current: 1A Power dissipation: 2W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SPA11N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 33A Power dissipation: 33W Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SPB11N60C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Case: PG-TO263 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 33A Power dissipation: 125W Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SPP11N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Case: PG-TO220 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 33A Power dissipation: 125W Technology: CoolMOS™ |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPW35N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Power dissipation: 313W Case: PG-TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 21.9A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±20V On-state resistance: 0.1Ω |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP4468PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 290A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLML6402TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7416TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8 Case: SO8 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Technology: HEXFET® Drain current: -10A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel |
auf Bestellung 2959 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5210PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3661 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5210STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5210STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IR4427STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -1.5...1.5A Power: 625mW Number of channels: 2 Supply voltage: 6...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Turn-on time: 85ns Turn-off time: 65ns |
auf Bestellung 1617 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLR2905TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 160A Power dissipation: 110W Case: DPAK Gate-source voltage: ±16V On-state resistance: 27mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1288 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 30V; 100mA; SOT343; single diode; 80ns; Ufmax: 1V Case: SOT343 Mounting: SMD Max. forward voltage: 1V Features of semiconductor devices: RF Max. off-state voltage: 30V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: switching Reverse recovery time: 80ns |
auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS28WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double independent Features of semiconductor devices: ultrafast switching Case: SOT343 Max. forward voltage: 1.25V Power dissipation: 0.25W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC847CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Frequency: 250MHz |
auf Bestellung 4962 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC849CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420...800 Mounting: SMD Frequency: 250MHz |
auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC858CWH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 250MHz |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 22 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC860CWH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 250MHz |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR108WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ Mounting: SMD Base resistor: 2.2kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Base-emitter resistor: 47kΩ Case: SOT323 Frequency: 170MHz Collector current: 0.1A Collector-emitter voltage: 50V |
auf Bestellung 2946 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BCR116WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323 Mounting: SMD Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Base-emitter resistor: 47kΩ Case: SOT323 Frequency: 150MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 4.7kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB3077PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 210A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPA17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 42W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPB17N80C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 227W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IKW75N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-on time: 86ns
Turn-off time: 185ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-on time: 86ns
Turn-off time: 185ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IKZ75N65EL5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 325ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 325ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZ75N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 197W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 427ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 197W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 427ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPW35N60CFD |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF540ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF9530NSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 877 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFL014NTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKD10N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Turn-on time: 24ns
Kind of package: reel; tape
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 30A
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Turn-on time: 24ns
Kind of package: reel; tape
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKD10N60RFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Turn-on time: 27ns
Kind of package: reel; tape
Turn-off time: 186ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 30A
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Turn-on time: 27ns
Kind of package: reel; tape
Turn-off time: 186ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 30A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLU024NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 532 Stücke:
Lieferzeit 14-21 Tag (e)
| PVG612 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: THT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: THT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| PVG612ASPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Case: DIP6
On-state resistance: 0.1Ω
Mounting: SMT
Type of relay: solid state
Manufacturer series: PVG612
Relay variant: MOSFET
Control voltage: 1.2V DC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 3.5ms
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Max. operating current: 4A
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Case: DIP6
On-state resistance: 0.1Ω
Mounting: SMT
Type of relay: solid state
Manufacturer series: PVG612
Relay variant: MOSFET
Control voltage: 1.2V DC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 3.5ms
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Max. operating current: 4A
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
| PVG612S |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: PVG612
Relay variant: MOSFET
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 2ms
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Max. operating current: 2.4A
On-state resistance: 0.15Ω
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: PVG612
Relay variant: MOSFET
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 2ms
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Max. operating current: 2.4A
On-state resistance: 0.15Ω
Type of relay: solid state
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
| BFR93AE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 10337 Stücke:
Lieferzeit 14-21 Tag (e)
| BFR93AWH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFZ44ZSTRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IRLR024NTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10195 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLML2030TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLML2502TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF2807PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 106.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 106.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1207 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF2807STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF2807STRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF2807ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21844SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21844STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2184PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2184SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2184STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT60AE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 5A
Power dissipation: 1.35W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 11451 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS452R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output voltage: 62V
Output current: 1.8A
Case: PG-TO252-5-11
Mounting: SMD
Number of channels: 1
Supply voltage: 6...52V DC
Kind of output: N-Channel
Technology: Classic PROFET
On-state resistance: 0.2Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output voltage: 62V
Output current: 1.8A
Case: PG-TO252-5-11
Mounting: SMD
Number of channels: 1
Supply voltage: 6...52V DC
Kind of output: N-Channel
Technology: Classic PROFET
On-state resistance: 0.2Ω
auf Bestellung 1905 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV70SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.25W
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 1220 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV99SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2092STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Frequency: 800kHz
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Frequency: 800kHz
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP064NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 508 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3206PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF3415PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 872 Stücke:
Lieferzeit 14-21 Tag (e)
| BCP5216H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Polarisation: bipolar
Frequency: 125MHz
Type of transistor: PNP
Collector current: 1A
Power dissipation: 2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Polarisation: bipolar
Frequency: 125MHz
Type of transistor: PNP
Collector current: 1A
Power dissipation: 2W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPA11N60C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Power dissipation: 33W
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Power dissipation: 33W
Technology: CoolMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| SPB11N60C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Power dissipation: 125W
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Power dissipation: 125W
Technology: CoolMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| SPP11N60C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Power dissipation: 125W
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Power dissipation: 125W
Technology: CoolMOS™
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| SPW35N60C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Power dissipation: 313W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 21.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Power dissipation: 313W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 21.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4468PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLML6402TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| IRF7416TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel
auf Bestellung 2959 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5210PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3661 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5210STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5210STRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IR4427STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 1617 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR2905TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1288 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR81WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOT343; single diode; 80ns; Ufmax: 1V
Case: SOT343
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 80ns
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOT343; single diode; 80ns; Ufmax: 1V
Case: SOT343
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 80ns
auf Bestellung 935 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS28WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT343
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT343
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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Stück im Wert von UAH
| BC847CWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4962 Stücke:
Lieferzeit 14-21 Tag (e)
| BC849CWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Frequency: 250MHz
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
| BC858CWH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| BC860CWH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR108WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 170MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 170MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
auf Bestellung 2946 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR116WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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Stück im Wert von UAH
| IRFB3077PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
| SPA17N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| SPB17N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)