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BTS5215LAUMA1 INFINEON TECHNOLOGIES Infineon-BTS5215L-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aa3febfed1046 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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BFR380FH6327 BFR380FH6327 INFINEON TECHNOLOGIES BFR380FH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSFP-3
Mounting: SMD
Frequency: 14GHz
Kind of package: reel; tape
auf Bestellung 5583 Stücke:
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162+0.52 EUR
213+0.4 EUR
355+0.24 EUR
500+0.18 EUR
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BFR380FH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFR380F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f040158393a Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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BFR380L3E6327XTMA1 INFINEON TECHNOLOGIES BFR380L3E6327XTMA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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IR21363JTRPBF INFINEON TECHNOLOGIES INFN-S-A0002363488-1.pdf?t.download=true&u=5oefqw IRSDS12169-1.pdf?t.download=true&u=5oefqw Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
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IR21363STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363488-1.pdf?t.download=true&u=5oefqw Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5 Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
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CY8C23533-24LQXI CY8C23533-24LQXI INFINEON TECHNOLOGIES CY8C23533-24LQXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN32; 250BSRAM,8kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 26
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 250B SRAM; 8kB FLASH
Case: QFN32
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Supply voltage: 3...5.25V DC
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S29GL128P11FFI020S29GL128P11FFI020
S29GL128P11FFI020S29GL128P11FFI020
 S29GL128P11FFI020 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Case: BGA64
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 61 Stücke:
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9+10.13 EUR
25+9.19 EUR
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S29GL128P90FFIR20 S29GL128P90FFIR20 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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BSR315PH6327XTSA1 BSR315PH6327XTSA1 INFINEON TECHNOLOGIES BSR315PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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BAS16WH6433XTMA1 INFINEON TECHNOLOGIES bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
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CY7C1021D-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY7C1021DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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CY7C1041G-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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CY7C1041G-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY7C1041G30-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2.2...3.6V DC
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CY7C1041G30-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY7C1021D-10ZSXI INFINEON TECHNOLOGIES download description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
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CY7C1021D-10ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
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CY7C1021DV33-10BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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BFP540H6327 BFP540H6327 INFINEON TECHNOLOGIES BFP540.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 4.5V
Power dissipation: 0.25W
Polarisation: bipolar
Technology: SIEGET™
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 33GHz
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BFP540ESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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S25HS512TDPBHI010 INFINEON TECHNOLOGIES 002-12345_rev-AF.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25HS512TDPMHI010 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25HS512TFABHI010 INFINEON TECHNOLOGIES 002-12345_rev-AF.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25HS512TFANHI010 INFINEON TECHNOLOGIES 002-12345_rev-AF.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25HS512TFANHI013 INFINEON TECHNOLOGIES infineon-512-mb-1-gb-semper-tm-flash-quad-spi-ja-datasheet-ja.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
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IPLK60R360PFD7ATMA1 INFINEON TECHNOLOGIES Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPL65R165CFDAUMA2 INFINEON TECHNOLOGIES Infineon-IPL65R165CFD-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144dee127e60baf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPL60R185P7AUMA1 INFINEON TECHNOLOGIES infineon-ipl60r185p7-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; 81W; VSON4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 81W
Case: VSON4
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
Produkt ist nicht verfügbar
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IPL60R104C7AUMA1 IPL60R104C7AUMA1 INFINEON TECHNOLOGIES IPL60R104C7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.53 EUR
15+5.81 EUR
17+5.26 EUR
25+4.63 EUR
50+4.47 EUR
Mindestbestellmenge: 12 Stücke
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IPL60R085P7AUMA1 IPL60R085P7AUMA1 INFINEON TECHNOLOGIES IPL60R085P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 154W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 154W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R075CFD7 IPL60R075CFD7 INFINEON TECHNOLOGIES IPL60R075CFD7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 189W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
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IPL60R105P7AUMA1 IPL60R105P7AUMA1 INFINEON TECHNOLOGIES IPL60R105P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R125P7AUMA1 IPL60R125P7AUMA1 INFINEON TECHNOLOGIES IPL60R125P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R210P6AUMA1 IPL60R210P6AUMA1 INFINEON TECHNOLOGIES IPL60R210P6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R285P7AUMA1 IPL60R285P7AUMA1 INFINEON TECHNOLOGIES IPL60R285P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 59W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 59W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.285Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R650P6SATMA1 INFINEON TECHNOLOGIES IPL60R650P6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R060CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R065C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R075CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R075CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3aa6a5731ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R095CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R095CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f96542e4f53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R125C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R125C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b448dc78594a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R140CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R160CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R160CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ef18bea4d44 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R180P6AUMA1 IPL60R180P6AUMA1 INFINEON TECHNOLOGIES IPL60R180P6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R185C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R185CFD7 IPL60R185CFD7 INFINEON TECHNOLOGIES IPL60R185CFD7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.346Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R185CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R185CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3bcb41d31af Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL60R199CPAUMA1 IPL60R199CPAUMA1 INFINEON TECHNOLOGIES IPL60R199CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.4A
Power dissipation: 139W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R1K5C6SATMA1 IPL60R1K5C6SATMA1 INFINEON TECHNOLOGIES IPL60R1K5C6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 26.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R299CPAUMA1 IPL60R299CPAUMA1 INFINEON TECHNOLOGIES IPL60R299CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.1A; 96W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.1A
Power dissipation: 96W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R2K1C6SATMA1 IPL60R2K1C6SATMA1 INFINEON TECHNOLOGIES IPL60R2K1C6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 21.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 21.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R365P7AUMA1 IPL60R365P7AUMA1 INFINEON TECHNOLOGIES IPL60R365P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 46W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 46W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R065CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R065CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d4bd84e822b7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPL65R095CFD7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BTS5215LAUMA1 Infineon-BTS5215L-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aa3febfed1046
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BFR380FH6327 BFR380FH6327-dte.pdf
BFR380FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSFP-3
Mounting: SMD
Frequency: 14GHz
Kind of package: reel; tape
auf Bestellung 5583 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
213+0.4 EUR
355+0.24 EUR
500+0.18 EUR
Mindestbestellmenge: 162 Stücke
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BFR380FH6327XTSA1 Infineon-BFR380F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f040158393a
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BFR380L3E6327XTMA1 BFR380L3E6327XTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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IR21363JTRPBF INFN-S-A0002363488-1.pdf?t.download=true&u=5oefqw IRSDS12169-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IR21363STRPBF INFN-S-A0002363488-1.pdf?t.download=true&u=5oefqw Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY8C23533-24LQXI CY8C23533-24LQXI.pdf
CY8C23533-24LQXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN32; 250BSRAM,8kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 26
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 250B SRAM; 8kB FLASH
Case: QFN32
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Supply voltage: 3...5.25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 980 Stücke
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S29GL128P11FFI020 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P11FFI020S29GL128P11FFI020
S29GL128P11FFI020S29GL128P11FFI020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Case: BGA64
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+10.13 EUR
25+9.19 EUR
Mindestbestellmenge: 9 Stücke
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S29GL128P90FFIR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR20
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BSR315PH6327XTSA1 BSR315PH6327XTSA1.pdf
BSR315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
62+1.38 EUR
Mindestbestellmenge: 62 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16WH6433XTMA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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CY7C1021D-10VXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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CY7C1021DV33-10VXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 17 Stücke
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CY7C1021DV33-10VXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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CY7C1041G-10VXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY7C1041G-10VXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY7C1041G30-10VXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1041G30-10VXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1021D-10ZSXI description download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
Produkt ist nicht verfügbar
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CY7C1021D-10ZSXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10BVXI Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
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CY7C1021DV33-10ZSXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1021DV33-10BVXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BFP540H6327 BFP540.pdf
BFP540H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 4.5V
Power dissipation: 0.25W
Polarisation: bipolar
Technology: SIEGET™
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 33GHz
Produkt ist nicht verfügbar
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BFP540ESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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S25HS512TDPBHI010 002-12345_rev-AF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S25HS512TDPMHI010 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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S25HS512TFABHI010 002-12345_rev-AF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S25HS512TFANHI010 002-12345_rev-AF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25HS512TFANHI013 infineon-512-mb-1-gb-semper-tm-flash-quad-spi-ja-datasheet-ja.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPLK60R360PFD7ATMA1 Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPL65R165CFDAUMA2 Infineon-IPL65R165CFD-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144dee127e60baf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R185P7AUMA1 infineon-ipl60r185p7-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; 81W; VSON4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 81W
Case: VSON4
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R104C7AUMA1 IPL60R104C7.pdf
IPL60R104C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.53 EUR
15+5.81 EUR
17+5.26 EUR
25+4.63 EUR
50+4.47 EUR
Mindestbestellmenge: 12 Stücke
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IPL60R085P7AUMA1 IPL60R085P7.pdf
IPL60R085P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 154W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 154W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R075CFD7 IPL60R075CFD7.pdf
IPL60R075CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 189W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
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IPL60R105P7AUMA1 IPL60R105P7.pdf
IPL60R105P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R125P7AUMA1 IPL60R125P7.pdf
IPL60R125P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R210P6AUMA1 IPL60R210P6-DTE.pdf
IPL60R210P6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R285P7AUMA1 IPL60R285P7.pdf
IPL60R285P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 59W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 59W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.285Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
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IPL60R650P6SATMA1 IPL60R650P6S-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R065C7AUMA1 Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R075CFD7AUMA1 Infineon-IPL60R075CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3aa6a5731ad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R095CFD7AUMA1 Infineon-IPL60R095CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f96542e4f53
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R125C7AUMA1 Infineon-IPL60R125C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b448dc78594a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R140CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R160CFD7AUMA1 Infineon-IPL60R160CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ef18bea4d44
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R180P6AUMA1 IPL60R180P6-DTE.pdf
IPL60R180P6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R185C7AUMA1 Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPL60R185CFD7 IPL60R185CFD7.pdf
IPL60R185CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.346Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Produkt ist nicht verfügbar
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IPL60R185CFD7AUMA1 Infineon-IPL60R185CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3bcb41d31af
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPL60R199CPAUMA1 IPL60R199CP-DTE.pdf
IPL60R199CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.4A
Power dissipation: 139W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R1K5C6SATMA1 IPL60R1K5C6S-DTE.pdf
IPL60R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 26.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R299CPAUMA1 IPL60R299CP-DTE.pdf
IPL60R299CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.1A; 96W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.1A
Power dissipation: 96W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R2K1C6SATMA1 IPL60R2K1C6S-DTE.pdf
IPL60R2K1C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 21.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 21.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R365P7AUMA1 IPL60R365P7.pdf
IPL60R365P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 46W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 46W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Version: ESD
Produkt ist nicht verfügbar
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IPL65R065CFD7AUMA1 Infineon-IPL65R065CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d4bd84e822b7f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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