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BSS119NH6327XTSA1 BSS119NH6327XTSA1 INFINEON TECHNOLOGIES BSS119NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
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481+0.18 EUR
693+0.12 EUR
812+0.1 EUR
1166+0.073 EUR
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PVA3354NPBF PVA3354NPBF INFINEON TECHNOLOGIES IRSDS10619-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Leads: for PCB
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FM25VN10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BFP640FH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Current gain: 110
Frequency: 40GHz
Collector current: 50mA
Power dissipation: 0.2W
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BFP640FESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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BFP520H6327 BFP520H6327 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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BFP520H6327XTSA1 BFP520H6327XTSA1 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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2ED21814S06JXUMA1 INFINEON TECHNOLOGIES infineon-2edl23-final-rev2.9-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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BCP55H6327XTSA1 BCP55H6327XTSA1 INFINEON TECHNOLOGIES BCP55H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 INFINEON TECHNOLOGIES BSR202NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
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160+0.54 EUR
211+0.4 EUR
234+0.37 EUR
265+0.32 EUR
500+0.3 EUR
1000+0.27 EUR
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IRFHM3911TRPBF INFINEON TECHNOLOGIES irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DZ600N18K DZ600N18K INFINEON TECHNOLOGIES DZ600N18K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.8kV
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IPT019N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IPT111N20NFDATMA1 INFINEON TECHNOLOGIES Infineon-IPT111N20NFD-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8b4b786fc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
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IPT030N12N3GATMA1 INFINEON TECHNOLOGIES infineon-ipt030n12n3-g-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 237A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 237A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 158nC
Kind of channel: enhancement
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IPT044N15N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt044n15n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
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IPC313N10N3RX1SA2 INFINEON TECHNOLOGIES Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Case: DPAK3
On-state resistance: 0.1Ω
Mounting: SMD
Kind of channel: enhancement
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IPD50N04S4L08ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
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IPD50N04S408ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
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IPD50N04S410ATMA1 IPD50N04S410ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 41W; DPAK,TO252
Power dissipation: 41W
Gate charge: 18.2nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 8.5mΩ
Mounting: SMD
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IPB110N20N3LF IPB110N20N3LF INFINEON TECHNOLOGIES IPB110N20N3LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IDDD10G65C6XTMA1 INFINEON TECHNOLOGIES IDDD10G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 10A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 1µA
Power dissipation: 105W
Kind of package: reel; tape
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IDW20G65C5BXKSA2 IDW20G65C5BXKSA2 INFINEON TECHNOLOGIES IDW20G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 46A
Leakage current: 2µA
Power dissipation: 130W
Kind of package: tube
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IDW20G65C5XKSA1 IDW20G65C5XKSA1 INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
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IDDD20G65C6XTMA1 INFINEON TECHNOLOGIES IDDD20G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 20A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 2µA
Power dissipation: 169W
Kind of package: reel; tape
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BSC016N03LSGATMA1 BSC016N03LSGATMA1 INFINEON TECHNOLOGIES BSC016N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
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ISC026N03L5SATMA1 ISC026N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 48W; PG-TDSON-8
Mounting: SMD
Power dissipation: 48W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: PG-TDSON-8
On-state resistance: 2.6mΩ
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ISZ056N03LF2SATMA1 INFINEON TECHNOLOGIES ISZ056N03LF2SATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
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S25FS064SAGNFN030 INFINEON TECHNOLOGIES Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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ETD540N22P60HPSA1 INFINEON TECHNOLOGIES ETD540N22P60_ETT540N22P60.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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AIMZA75R016M1HXKSA1 INFINEON TECHNOLOGIES Infineon-AIMZA75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018da7d8a6134195 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
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BC847BWH6327XTSA1 BC847BWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
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SGB02N120ATMA1 INFINEON TECHNOLOGIES SGB02N120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42799e03c76 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 6.2A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 6.2A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Gate charge: 11nC
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1000+1.65 EUR
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IRF150P221AKMA1 IRF150P221AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRF7379TRPBF IRF7379TRPBF INFINEON TECHNOLOGIES irf7379pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TCA505BG-2 INFINEON TECHNOLOGIES Category: Unclassified
Description: TCA505BG-2
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Lieferzeit 14-21 Tag (e)
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IKB06N60TATMA1 IKB06N60TATMA1 INFINEON TECHNOLOGIES IKB06N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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CYBLE-222014-01 INFINEON TECHNOLOGIES Infineon-CYBLE-222014-01-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edac5815d5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Type of communications module: Bluetooth Low Energy
Bluetooth version: 4.2; BLE
Transmitter output power: 3dBm
Supply voltage: 1.8...4.5V DC
Interface: I2C; SPI; UART
Mounting: SMD
Dimensions: 10x10mm
Receiver sensitivity: -91dBm
Kind of module: wireless
Frequency: 2.4GHz
Produkt ist nicht verfügbar
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IPP026N10NF2SAKMA1 IPP026N10NF2SAKMA1 INFINEON TECHNOLOGIES infineon-ipp026n10nf2s-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 184A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector current: 0.1A
Mounting: SMD
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642+0.13 EUR
807+0.11 EUR
1000+0.1 EUR
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BCR35PNH6327 BCR35PNH6327 INFINEON TECHNOLOGIES BCR35PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Collector current: 0.1A
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Lieferzeit 14-21 Tag (e)
200+0.43 EUR
435+0.19 EUR
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
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BCR10PNH6327 BCR10PNH6327 INFINEON TECHNOLOGIES BCR10PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Base-emitter resistor: 10kΩ
Case: SOT363
Frequency: 130MHz
Collector current: 0.1A
Produkt ist nicht verfügbar
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BCR35PNH6433XTMA1 INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4937 Stücke:
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295+0.29 EUR
424+0.2 EUR
669+0.13 EUR
842+0.1 EUR
1132+0.075 EUR
1316+0.064 EUR
1378+0.062 EUR
Mindestbestellmenge: 295 Stücke
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF INFINEON TECHNOLOGIES IRF2907ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY7C65210A-24LTXIT INFINEON TECHNOLOGIES Infineon-65210_65217_65210A_65217A.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x11,I2C; USB controller; Full Speed; QFN24
Interface: GPIO x11; I2C
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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CY7C65217A-24LTXIT CY7C65217A-24LTXIT INFINEON TECHNOLOGIES Infineon-65210_65217_65210A_65217A.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x9; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65211A-24LTXIT CY7C65211A-24LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65211_USB.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY7C65215A-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65215_CY7C65215A.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES 1EDCxxI12MH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Number of channels: 1
Mounting: SMD
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 967 Stücke:
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24+3.59 EUR
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES 1EDCxxI12MH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Number of channels: 1
Mounting: SMD
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
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IRL100HS121 IRL100HS121 INFINEON TECHNOLOGIES IRL100HS121.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.8A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA95R1K2P7XKSA1 IPA95R1K2P7XKSA1 INFINEON TECHNOLOGIES IPA95R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 84 Stücke:
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36+2.42 EUR
60+1.43 EUR
71+1.21 EUR
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IDW10G65C5XKSA1 IDW10G65C5XKSA1 INFINEON TECHNOLOGIES IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Leakage current: 2µA
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
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S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 INFINEON TECHNOLOGIES BSC520N15NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IFX007TAUMA1IFX007TAUMA1
IFX007TAUMA1IFX007TAUMA1
 IFX007TAUMA1 INFINEON TECHNOLOGIES IFX007T.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 182 Stücke:
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20+4.36 EUR
23+3.75 EUR
26+3.37 EUR
28+3.13 EUR
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S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Interface: QUAD SPI
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053 INFINEON TECHNOLOGIES infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Interface: QUAD SPI
Kind of memory: NOR
Produkt ist nicht verfügbar
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BSS119NH6327XTSA1 BSS119NH6327XTSA1.pdf
BSS119NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4272 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
481+0.18 EUR
693+0.12 EUR
812+0.1 EUR
1166+0.073 EUR
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PVA3354NPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
PVA3354NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Leads: for PCB
auf Bestellung 3618 Stücke:
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50+10.2 EUR
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Current gain: 110
Frequency: 40GHz
Collector current: 50mA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BFP640FESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
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BFP520H6327 BFP520.pdf
BFP520H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 BFP520.pdf
BFP520H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.53 EUR
Mindestbestellmenge: 24 Stücke
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2ED21814S06JXUMA1 infineon-2edl23-final-rev2.9-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
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BCP55H6327XTSA1 BCP55H6327XTSA1.pdf
BCP55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSR202NL6327HTSA1 BSR202NL6327HTSA1.pdf
BSR202NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
99+0.87 EUR
160+0.54 EUR
211+0.4 EUR
234+0.37 EUR
265+0.32 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 99 Stücke
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DZ600N18K DZ600N18K.pdf
DZ600N18K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.8kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+438.76 EUR
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IPT019N08N5ATMA1 Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT111N20NFDATMA1 Infineon-IPT111N20NFD-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8b4b786fc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT030N12N3GATMA1 infineon-ipt030n12n3-g-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 237A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 237A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 158nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT044N15N5ATMA1 infineon-ipt044n15n5-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Case: DPAK3
On-state resistance: 0.1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N04S4L08ATMA1 Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD50N04S408ATMA1 Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD50N04S410ATMA1 Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t
IPD50N04S410ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 41W; DPAK,TO252
Power dissipation: 41W
Gate charge: 18.2nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 8.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPB110N20N3LF IPB110N20N3LF.pdf
IPB110N20N3LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IDDD10G65C6XTMA1 IDDD10G65C6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 10A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 1µA
Power dissipation: 105W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IDW20G65C5BXKSA2 IDW20G65C5B.pdf
IDW20G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 46A
Leakage current: 2µA
Power dissipation: 130W
Kind of package: tube
Produkt ist nicht verfügbar
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IDW20G65C5XKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
IDW20G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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IDDD20G65C6XTMA1 IDDD20G65C6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 20A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 2µA
Power dissipation: 169W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSC016N03LSGATMA1 BSC016N03LSG-DTE.pdf
BSC016N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC026N03L5SATMA1 Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988
ISC026N03L5SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 48W; PG-TDSON-8
Mounting: SMD
Power dissipation: 48W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: PG-TDSON-8
On-state resistance: 2.6mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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S25FS064SAGNFN030 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 980 Stücke
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ETD540N22P60HPSA1 ETD540N22P60_ETT540N22P60.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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AIMZA75R016M1HXKSA1 Infineon-AIMZA75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018da7d8a6134195
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
240+25.32 EUR
Mindestbestellmenge: 240 Stücke
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BC847BWH6327XTSA1 bc847_8_9_bc850.pdf
BC847BWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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SGB02N120ATMA1 SGB02N120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42799e03c76
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 6.2A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 6.2A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Gate charge: 11nC
auf Bestellung 55000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+1.65 EUR
Mindestbestellmenge: 1000 Stücke
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IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
IRF150P221AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.75 EUR
Mindestbestellmenge: 11 Stücke
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IRF7379TRPBF irf7379pbf.pdf
IRF7379TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TCA505BG-2
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TCA505BG-2
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+4.52 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKB06N60TATMA1 IKB06N60T.pdf
IKB06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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CYBLE-222014-01 Infineon-CYBLE-222014-01-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edac5815d5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Type of communications module: Bluetooth Low Energy
Bluetooth version: 4.2; BLE
Transmitter output power: 3dBm
Supply voltage: 1.8...4.5V DC
Interface: I2C; SPI; UART
Mounting: SMD
Dimensions: 10x10mm
Receiver sensitivity: -91dBm
Kind of module: wireless
Frequency: 2.4GHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IPP026N10NF2SAKMA1 infineon-ipp026n10nf2s-datasheet-en.pdf
IPP026N10NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 184A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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17+5.09 EUR
19+4.63 EUR
26+3.27 EUR
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BCR135SH6327 bcr135.pdf
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
414+0.2 EUR
642+0.13 EUR
807+0.11 EUR
1000+0.1 EUR
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BCR35PNH6327 BCR35PNH6327.pdf
BCR35PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Collector current: 0.1A
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
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200+0.43 EUR
435+0.19 EUR
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BCR135WH6327 bcr135.pdf
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCR10PNH6327 BCR10PNH6327.pdf
BCR10PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Base-emitter resistor: 10kΩ
Case: SOT363
Frequency: 130MHz
Collector current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCR35PNH6433XTMA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4937 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
424+0.2 EUR
669+0.13 EUR
842+0.1 EUR
1132+0.075 EUR
1316+0.064 EUR
1378+0.062 EUR
Mindestbestellmenge: 295 Stücke
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF.pdf
IRF2907ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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CY7C65210A-24LTXIT Infineon-65210_65217_65210A_65217A.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x11,I2C; USB controller; Full Speed; QFN24
Interface: GPIO x11; I2C
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY7C65217A-24LTXIT Infineon-65210_65217_65210A_65217A.pdf
CY7C65217A-24LTXIT
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x9,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x9; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY7C65211A-24LTXIT Infineon-CY7C65211_USB.pdf
CY7C65211A-24LTXIT
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x10,I2C,SPI,UART; USB controller; QFN24
Type of integrated circuit: USB interface
Interface: GPIO x10; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY7C65215A-32LTXIT Infineon-CY7C65215_CY7C65215A.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x17,I2C,SPI,UART; USB controller; QFN32
Type of integrated circuit: USB interface
Interface: GPIO x17; I2C; SPI; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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1EDC30I12MHXUMA1 1EDCxxI12MH.pdf
1EDC30I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Number of channels: 1
Mounting: SMD
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.59 EUR
27+3.17 EUR
Mindestbestellmenge: 24 Stücke
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1EDC10I12MHXUMA1 1EDCxxI12MH.pdf
1EDC10I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Number of channels: 1
Mounting: SMD
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.87 EUR
Mindestbestellmenge: 22 Stücke
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IRL100HS121 IRL100HS121.pdf
IRL100HS121
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.8A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA95R1K2P7XKSA1 IPA95R1K2P7.pdf
IPA95R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.42 EUR
60+1.43 EUR
71+1.21 EUR
Mindestbestellmenge: 36 Stücke
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IDW10G65C5XKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Leakage current: 2µA
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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BSC520N15NS3GATMA1 BSC520N15NS3G-DTE.pdf
BSC520N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IFX007TAUMA1 IFX007T.pdf
IFX007TAUMA1IFX007TAUMA1
IFX007TAUMA1IFX007TAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.36 EUR
23+3.75 EUR
26+3.37 EUR
28+3.13 EUR
Mindestbestellmenge: 20 Stücke
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S25HS02GTDPBHB053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Interface: QUAD SPI
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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S25HS02GTDPBHV053 infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Interface: QUAD SPI
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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