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ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Output current: 6mA
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Case: PG-DSO-20
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Operating voltage: 11...18V DC
Topology: push-pull
Type of integrated circuit: PMIC
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SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES SPP11N80C3-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFP3006PBF IRFP3006PBF INFINEON TECHNOLOGIES IRFP3006PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES BTS50085-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
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BTS441RG BTS441RG INFINEON TECHNOLOGIES BTS441RG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
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BTS6133D BTS6133D INFINEON TECHNOLOGIES BTS6133D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
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BSP752R BSP752R INFINEON TECHNOLOGIES BSP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
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BTS4300SGA BTS4300SGA INFINEON TECHNOLOGIES BTS4300SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 34A
Version: ESD
Kind of package: tube
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Kind of package: tube
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES IPN70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
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IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES IPS70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
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BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES BSP129H6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
On-state resistance: 41mΩ
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SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES SPD50P03LGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD122N10N3GATMA1 IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES IRF40R207.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Mounting: SMD
Power dissipation: 83W
Gate charge: 45nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.1mΩ
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CY15B004Q-SXE CY15B004Q-SXE INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Kind of interface: serial
Memory organisation: 512x8bit
Case: SO8
Interface: SPI
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ICE3PCS03GXUMA1 ICE3PCS03GXUMA1 INFINEON TECHNOLOGIES ICE3PCS03G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS01G ICE3PCS01G INFINEON TECHNOLOGIES ICE3PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
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IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRLR120NTRPBF IRLR120NTRPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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CY62148EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
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CY62148EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
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BC849BE6327HTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200...450
Mounting: SMD
Frequency: 250MHz
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IPB025N10N3GATMA1 IPB025N10N3GATMA1 INFINEON TECHNOLOGIES IPB025N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB025N08N3GATMA1 IPB025N08N3GATMA1 INFINEON TECHNOLOGIES IPB025N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC016N06NSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES BAS125-0xW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 0.95V
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
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BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT323
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IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
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IR2135JPBF IR2135JPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Power: 2W
Kind of package: tube
Case: PLCC44
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
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IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES irfp150n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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BTS70101EPAXUMA1 BTS70101EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7010-1EPA-DataSheet-v01_02-EN.pdf?fileId=5546d462636cc8fb0163fe8fada108bf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 19.5mΩ
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES BAW101E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Operating voltage: 10.5...24V DC
Frequency: 39...65kHz
Breakdown voltage: 650V
Input voltage: 85...265V
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PVI1050NSPBFHLLA1 PVI1050NSPBFHLLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES IKD03N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES BSC109N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP135IXTSA1 BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 1.8W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Gate charge: 3.7nC
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES BCV62.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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IR2127STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IR21271STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Produkt ist nicht verfügbar
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IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES IPD70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES IPN70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±16V
Version: ESD
Produkt ist nicht verfügbar
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IPS70R900P7SAKMA1 INFINEON TECHNOLOGIES infineon-ips70r900p7s-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 30.5W
Case: TO251
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.26A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Integrated circuit features: bridge
Produkt ist nicht verfügbar
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TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES TLS115B0.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IKA08N65F5XKSA1 IKA08N65F5XKSA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES IPZ60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™ C7
Features of semiconductor devices: Kelvin terminal
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-4
On-state resistance: 40mΩ
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
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PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES IRSDS10627-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
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PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES IRS2982S-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
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BTS443P BTS443P INFINEON TECHNOLOGIES BTS443P_DS_v10.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Output current: 6mA
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Case: PG-DSO-20
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Operating voltage: 11...18V DC
Topology: push-pull
Type of integrated circuit: PMIC
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SPP11N80C3 SPP11N80C3-dte.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFP3006PBF IRFP3006PBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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BTS50085-1TMA BTS50085-1TMA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
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BTS441RG BTS441RG.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
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BTS6133D BTS6133D.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
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BSP752R BSP752R.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
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BTS4300SGA BTS4300SGA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
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IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 34A
Version: ESD
Kind of package: tube
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IPAN70R360P7SXKSA1 IPAN70R360P7S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Kind of package: tube
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IPN70R360P7SATMA1 IPN70R360P7S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 IPS70R360P7S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Produkt ist nicht verfügbar
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BSP129H6327XTSA1 BSP129H6327-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
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BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
On-state resistance: 41mΩ
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SPD50P03LGBTMA1 SPD50P03LGBTMA1-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1455 Stücke:
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BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2211 Stücke:
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IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 2182 Stücke:
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IRF40R207 IRF40R207.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Mounting: SMD
Power dissipation: 83W
Gate charge: 45nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.1mΩ
Produkt ist nicht verfügbar
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CY15B004Q-SXE CY15B004Q_RevC_6-4-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Kind of interface: serial
Memory organisation: 512x8bit
Case: SO8
Interface: SPI
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 ICE3PCS03G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS01G ICE3PCS01G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1230 Stücke:
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IRFR9120NTRLPBF irfr9120npbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRLR120NTRPBF description irlr120npbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5919 Stücke:
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CY62148EV30LL-45BVXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
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CY62148EV30LL-45ZSXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BC849BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200...450
Mounting: SMD
Frequency: 250MHz
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IPB025N10N3GATMA1 IPB025N10N3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 565 Stücke:
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IPB025N08N3GATMA1 IPB025N08N3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 652 Stücke:
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BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BAS12504WH6327XTSA1 BAS125-0xW.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 0.95V
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
auf Bestellung 2045 Stücke:
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BAR6405WH6327XTSA1 BAR64xx_Ser.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT323
Produkt ist nicht verfügbar
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IR2233JPBF IR2133JPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
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IR2135JPBF IR2133JPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Power: 2W
Kind of package: tube
Case: PLCC44
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
auf Bestellung 18 Stücke:
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IRFP150NPBF description irfp150n.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 324 Stücke:
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BTS70101EPAXUMA1 Infineon-BTS7010-1EPA-DataSheet-v01_02-EN.pdf?fileId=5546d462636cc8fb0163fe8fada108bf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 19.5mΩ
auf Bestellung 1717 Stücke:
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BAW101E6327HTSA1 BAW101E6327HTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Operating voltage: 10.5...24V DC
Frequency: 39...65kHz
Breakdown voltage: 650V
Input voltage: 85...265V
auf Bestellung 1745 Stücke:
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
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Mindestbestellmenge: 50 Stücke
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IKD03N60RFATMA1 IKD03N60RF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSC109N10NS3GATMA1 BSC109N10NS3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 1.8W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Gate charge: 3.7nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BCV62BE6327 BCV62.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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IR2127STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
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IPD70R900P7SAUMA1 IPD70R900P7S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1333 Stücke:
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IPN70R900P7SATMA1 IPN70R900P7S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±16V
Version: ESD
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IPS70R900P7SAKMA1 infineon-ips70r900p7s-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 30.5W
Case: TO251
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
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IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.26A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Integrated circuit features: bridge
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TLS115B0LDXUMA1 TLS115B0.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
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IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IKA08N65F5XKSA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
auf Bestellung 80 Stücke:
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IPZ60R040C7XKSA1 IPZ60R040C7-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™ C7
Features of semiconductor devices: Kelvin terminal
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-4
On-state resistance: 40mΩ
auf Bestellung 17 Stücke:
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BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
auf Bestellung 242 Stücke:
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PVI5033RSPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
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PVI5033RS-TPBF PVI5033RS-TPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
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IRS2982STRPBF IRS2982S-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
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BTS443P description BTS443P_DS_v10.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
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