Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128403) > Seite 2072 nach 2141
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
 Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20 Output current: 6mA Mounting: SMD Operating temperature: -25...125°C Application: SMPS Case: PG-DSO-20 Kind of integrated circuit: resonant mode controller Frequency: 30kHz...1MHz Operating voltage: 11...18V DC Topology: push-pull Type of integrated circuit: PMIC |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPP11N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 156W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS50085-1TMA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO220-7-4 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS441RG | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Output voltage: 4.75...43V Technology: Classic PROFET |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS6133D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 33A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 8mΩ Supply voltage: 5.5...38V DC Technology: High Current PROFET |
auf Bestellung 2503 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Technology: Classic PROFET Output voltage: 52V |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4300SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.3Ω Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 2425 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 34A Version: ESD Kind of package: tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 16.4nC Version: ESD Kind of package: tube |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN70R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 7.2W Case: PG-SOT223 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Gate charge: 16.4nC Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPS70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 16.4nC Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 50mA Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Kind of channel: depletion |
auf Bestellung 774 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSD223PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSL207SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 2W Case: PG-TSOP-6 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V On-state resistance: 41mΩ |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPD50P03LGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 150W Case: PG-TO252-5 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1127 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSL307SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.5A Power dissipation: 2W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1455 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSO207PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2211 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD122N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 2182 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF40R207 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK Mounting: SMD Power dissipation: 83W Gate charge: 45nC Polarisation: unipolar Technology: HEXFET® Drain current: 64A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: DPAK On-state resistance: 5.1mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY15B004Q-SXE | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...125°C Clock frequency: 16MHz Memory: 4kb FRAM Kind of interface: serial Memory organisation: 512x8bit Case: SO8 Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ICE3PCS03GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 21...100kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: boost Input voltage: 90...270V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ICE3PCS01G | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 21...100kHz Case: PG-DSO-14 Mounting: SMD Operating temperature: -25...125°C Topology: boost Input voltage: 90...270V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
auf Bestellung 1230 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR9120NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLR120NTRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 5919 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CY62148EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: VFBGA36 Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 512kx8bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62148EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: TSOP32 II Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 512kx8bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BC849BE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SC59 Current gain: 200...450 Mounting: SMD Frequency: 250MHz |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB025N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 565 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSC016N06NSTATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 FL On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BAS12504WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double series Max. forward voltage: 0.95V Max. forward impulse current: 0.5A Power dissipation: 0.25W |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode Type of diode: switching Mounting: SMD Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 150V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SOT323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IR2233JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Power: 2W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 1.2kV Turn-on time: 750ns Turn-off time: 700ns Integrated circuit features: charge pump; dead time; integrated bootstrap functionality |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2135JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Supply voltage: 10...20V DC Output current: -420...200mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 0.6/1.2kV Turn-on time: 750ns Power: 2W Kind of package: tube Case: PLCC44 Turn-off time: 700ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP150NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 160W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS70101EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14 Operating temperature: -40...150°C Mounting: SMD Supply voltage: 4.1...28V DC Output current: 9A Type of integrated circuit: power switch Kind of output: N-Channel Technology: PROFET™+2 Kind of package: reel; tape Case: PG-TSDSO-14 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 19.5mΩ |
auf Bestellung 1717 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAW101E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.25A Reverse recovery time: 1µs Semiconductor structure: double independent Case: SOT143 Max. forward voltage: 1.3V Kind of package: reel; tape Power dissipation: 0.35W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ICE2QR0665XKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: PWM controller Case: DIP8 Number of channels: 1 Mounting: THT Operating temperature: -25...130°C Application: SMPS Operating voltage: 10.5...24V DC Frequency: 39...65kHz Breakdown voltage: 650V Input voltage: 85...265V |
auf Bestellung 1745 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PVI1050NSPBFHLLA1 | INFINEON TECHNOLOGIES |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Insulation voltage: 2.5kV Case: SMD8 Turn-on time: 90µs |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IKD03N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 53.6W Case: DPAK Mounting: SMD Gate charge: 17.1nC Kind of package: reel; tape Pulsed collector current: 7.5A Turn-on time: 17ns Turn-off time: 265ns Gate-emitter voltage: ±20V Collector current: 6A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPD03N60C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSC109N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSP135IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.12A Power dissipation: 1.8W Case: SOT23 On-state resistance: 30Ω Mounting: SMD Gate charge: 3.7nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCV62BE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Mounting: SMD Case: SOT143 Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 30V Power dissipation: 0.3W Polarisation: bipolar Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IR2127STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Number of channels: 1 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Input voltage: 12...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR21271STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Number of channels: 1 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Voltage class: 600V Output current: 0.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPD70R900P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.5A Power dissipation: 30.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1333 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPN70R900P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.5A Power dissipation: 6.5W Case: PG-SOT223 On-state resistance: 0.9Ω Mounting: SMD Gate charge: 6.8nC Kind of channel: enhancement Technology: CoolMOS™ P7 Gate-source voltage: ±16V Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPS70R900P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6A Power dissipation: 30.5W Case: TO251 On-state resistance: 0.74Ω Mounting: THT Gate charge: 6.9nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR21531STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 0.26A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Input voltage: 10...15.6V Integrated circuit features: bridge |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TLS115B0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Number of channels: 1 Input voltage: 4...45V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDWD40G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.65V Max. forward impulse current: 290A Power dissipation: 402W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IKA08N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5 Case: TO220FP Power dissipation: 15.6W Technology: TRENCHSTOP™ 5 Kind of package: tube Collector-emitter voltage: 650V Gate charge: 22nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 24A Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 6.8A Mounting: THT Manufacturer series: F5 |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPZ60R040C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4 Mounting: THT Power dissipation: 227W Polarisation: unipolar Technology: CoolMOS™ C7 Features of semiconductor devices: Kelvin terminal Drain current: 50A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO247-4 On-state resistance: 40mΩ |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 3.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-SOT89 On-state resistance: 90mΩ |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PVI5033RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Mounting: SMD Manufacturer series: PVI5033RPbF Kind of output: photodiode Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 2.5ms Case: Gull wing 8 Turn-off time: 5ms Number of channels: 2 |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
PVI5033RS-TPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Mounting: SMD Manufacturer series: PVI5033RPbF Case: Gull wing 8 Type of optocoupler: optocoupler Kind of output: photodiode Turn-off time: 0.5ms Turn-on time: 2.5ms Number of channels: 2 Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2982STRPBF | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: LED driver; SMPS controller Case: PG-DSO-8 Output current: 200...400mA Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating voltage: 12.8...18V DC Topology: flyback |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BTS443P | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5...36V DC Technology: High Current PROFET Output voltage: 43V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ICE2HS01GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Output current: 6mA
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Case: PG-DSO-20
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Operating voltage: 11...18V DC
Topology: push-pull
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Output current: 6mA
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Case: PG-DSO-20
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Operating voltage: 11...18V DC
Topology: push-pull
Type of integrated circuit: PMIC
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP11N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3006PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS50085-1TMA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS441RG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS6133D |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP752R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS4300SGA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
| IPA70R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 34A
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 34A
Version: ESD
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| IPAN70R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Kind of package: tube
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| IPN70R360P7SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPS70R360P7SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP129H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)
| BSD223PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1468 Stücke:
Lieferzeit 14-21 Tag (e)
| BSL207SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
On-state resistance: 41mΩ
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| SPD50P03LGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1127 Stücke:
Lieferzeit 14-21 Tag (e)
| BSL307SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
| BSO207PHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD122N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 2182 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF40R207 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Mounting: SMD
Power dissipation: 83W
Gate charge: 45nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Mounting: SMD
Power dissipation: 83W
Gate charge: 45nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.1mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY15B004Q-SXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Kind of interface: serial
Memory organisation: 512x8bit
Case: SO8
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Kind of interface: serial
Memory organisation: 512x8bit
Case: SO8
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3PCS03GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICE3PCS01G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1230 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR9120NTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLR120NTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5919 Stücke:
Lieferzeit 14-21 Tag (e)
| CY62148EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62148EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC849BE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200...450
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200...450
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB025N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB025N08N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 652 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC016N06NSTATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS12504WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 0.95V
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 0.95V
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
auf Bestellung 2045 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6405WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT323
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2233JPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2135JPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Power: 2W
Kind of package: tube
Case: PLCC44
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Power: 2W
Kind of package: tube
Case: PLCC44
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP150NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS70101EPAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 19.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 19.5mΩ
auf Bestellung 1717 Stücke:
Lieferzeit 14-21 Tag (e)
| BAW101E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICE2QR0665XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Operating voltage: 10.5...24V DC
Frequency: 39...65kHz
Breakdown voltage: 650V
Input voltage: 85...265V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Operating voltage: 10.5...24V DC
Frequency: 39...65kHz
Breakdown voltage: 650V
Input voltage: 85...265V
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
| PVI1050NSPBFHLLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD03N60RFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
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| SPD03N60C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BSC109N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BSP135IXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 1.8W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Gate charge: 3.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 1.8W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Gate charge: 3.7nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BCV62BE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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| IR2127STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IR21271STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IPD70R900P7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1333 Stücke:
Lieferzeit 14-21 Tag (e)
| IPN70R900P7SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±16V
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±16V
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IPS70R900P7SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 30.5W
Case: TO251
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 30.5W
Case: TO251
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| IR21531STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.26A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Integrated circuit features: bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.26A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Integrated circuit features: bridge
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLS115B0LDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IDWD40G120C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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| IKA08N65F5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| IPZ60R040C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™ C7
Features of semiconductor devices: Kelvin terminal
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-4
On-state resistance: 40mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™ C7
Features of semiconductor devices: Kelvin terminal
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-4
On-state resistance: 40mΩ
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS606NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| PVI5033RSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| PVI5033RS-TPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2982STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| BTS443P |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Im Einkaufswagen
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