Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128414) > Seite 2073 nach 2141

Wählen Sie Seite:   [  << Vorherige Seite ]  1 214 428 642 856 1070 1284 1498 1712 1926 2068 2069 2070 2071 2072 2073 2074 2075 2076 2077 2078 2140 2141  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 2
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Output current: 0.26A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES TLS115B0.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKA08N65F5XKSA1 IKA08N65F5XKSA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES IPZ60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES IRSDS10627-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES IRS2982S-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS443P BTS443P INFINEON TECHNOLOGIES BTS443P_DS_v10.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PVG612APBF PVG612APBF INFINEON TECHNOLOGIES infineon-pvg612a-datasheet-en.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Turn-on time: 3.5ms
Turn-off time: 0.5ms
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF IRFP3710PBF INFINEON TECHNOLOGIES irfp3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3415PBF IRFP3415PBF INFINEON TECHNOLOGIES irfp3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3703PBF IRFP3703PBF INFINEON TECHNOLOGIES irfp3703.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES BCR08PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES irfp4368pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC030N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2106S06FXUMA1 2ED2106S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 INFINEON TECHNOLOGIES SMBTA06UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-G FM24CL16B-G INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
S25FL032P0XMFA010 S25FL032P0XMFA010 INFINEON TECHNOLOGIES Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFI010 S25FL064LABMFI010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N04S4H2ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-2R8 IPC100N04S5-2R8 INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES IPC100N04S51R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES IPC100N04S5L1R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES IPB100N04S303.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES IPC100N04S5L1R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES IPC100N04S5L1R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES IPC100N04S5L2R6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES irfp7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Power dissipation: 341W
Gate charge: 274nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 281A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 2mΩ
Trade name: StrongIRFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NF2SAKMA1 IPP015N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF50251EL TLF50251EL INFINEON TECHNOLOGIES TLF50251EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLF50201EL TLF50201EL INFINEON TECHNOLOGIES TLF50201EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHA020 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Application: automotive
Memory: 256Mb FLASH
Kind of interface: parallel
Kind of package: in-tray
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY7C65632-48AXCT INFINEON TECHNOLOGIES Infineon-CY7C65632_CY7C65634_HX2VL.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF IRF7389TRPBF INFINEON TECHNOLOGIES irf7389pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES BFR181WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 10417 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES irlr3103pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7430TRLPBF IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 2
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Output current: 0.26A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLS115B0LDXUMA1 TLS115B0.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKA08N65F5XKSA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPZ60R040C7XKSA1 IPZ60R040C7-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PVI5033RSPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PVI5033RS-TPBF PVI5033RS-TPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2982STRPBF IRS2982S-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS443P description BTS443P_DS_v10.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PVG612APBF infineon-pvg612a-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Turn-on time: 3.5ms
Turn-off time: 0.5ms
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF irfp3710.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3415PBF irfp3415.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3703PBF irfp3703.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BCR08PNH6327 BCR08PNH6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4368PBF description irfp4368pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC030N10NM6ATMA1 Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2106S06FXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-G Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
S25FL032P0XMFA010 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFI010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-2R8 IPC100N04S52R8.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-1R9 IPC100N04S51R9.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R5 IPC100N04S5L1R5.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N04S303ATMA1 IPB100N04S303.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R1 IPC100N04S5L1R1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R9 IPC100N04S5L1R9.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-2R6 IPC100N04S5L2R6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7530PBF irfs7530pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP7530PBF irfp7530pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Power dissipation: 341W
Gate charge: 274nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 281A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 2mΩ
Trade name: StrongIRFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NF2SAKMA1 Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF50251EL TLF50251EL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLF50201EL TLF50201EL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHA020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Application: automotive
Memory: 256Mb FLASH
Kind of interface: parallel
Kind of package: in-tray
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY7C65632-48AXCT Infineon-CY7C65632_CY7C65634_HX2VL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF description irf7389pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFR181WH6327XTSA1 BFR181WH6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 10417 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE4945L TLE49x5L.PDF
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1503WE6327HTSA1 BAT1503WE6327HTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3103TRPBF irlr3103pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 214 428 642 856 1070 1284 1498 1712 1926 2068 2069 2070 2071 2072 2073 2074 2075 2076 2077 2078 2140 2141  [ Nächste Seite >> ]