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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: in-tray
Interface: octal
Kind of memory: NOR
Produkt ist nicht verfügbar
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES IPB107N20NA-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 644 Stücke:
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10+8.75 EUR
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TLD2314ELXUMA1 TLD2314ELXUMA1 INFINEON TECHNOLOGIES TLD2314EL.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
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64+1.34 EUR
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BAS3005S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES IKCM30F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
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5+18.91 EUR
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IGCM20F60GAXKMA1IGCM20F60GAXKMA1
IGCM20F60GAXKMA1IGCM20F60GAXKMA1
 IGCM20F60GAXKMA1 INFINEON TECHNOLOGIES IGCM20F60GAXKMA1.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
5+19.84 EUR
6+16.79 EUR
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES IKCM10L60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 25.2W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 280 Stücke:
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280+10.21 EUR
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IDD03SG60CXTMA2 INFINEON TECHNOLOGIES Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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IDD03SG60C IDD03SG60C INFINEON TECHNOLOGIES IDD03SG60C.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 0.23µA
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Power dissipation: 38W
Technology: CoolSiC™ 3G; SiC
Max. off-state voltage: 0.6kV
Case: PG-TO252-3
Produkt ist nicht verfügbar
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PVI1050NPBFHKLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1300 Stücke:
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50+9.29 EUR
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IPG20N10S4L35ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES IPB020N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES IPT020N10N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES IPB020N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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DD1600S33HE4BPSA1 INFINEON TECHNOLOGIES Infineon-DD1600S33HE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191eaef415b350e Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IMW65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247
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IMZA65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 41A
Pulsed drain current: 184A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247-4
Produkt ist nicht verfügbar
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1EDB6275FXUMA1 INFINEON TECHNOLOGIES infineon-1edb7275f-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W
Operating temperature: -40...125°C
Output current: 9A
Type of integrated circuit: driver
Power dissipation: 1.38W
Integrated circuit features: MOSFET
Pulse fall time: 5ns
Case: SOIC8
Kind of integrated circuit: high-side
Number of channels: 1
Impulse rise time: 8.3ns
Topology: H-bridge
Mounting: SMD
Maximum output current: 9A
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2500+1.09 EUR
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2ED21094S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Output current: -0.7...0.29A
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Voltage class: 650V
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES TLE9250.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN-FD
Type of integrated circuit: CAN transceiver
Case: PG-DSO-8
Produkt ist nicht verfügbar
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TZ800N16KOFHPSA3 INFINEON TECHNOLOGIES TZ800N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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TZ810N22KOFHPSA2 INFINEON TECHNOLOGIES TZ810N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 819A
Case: BG-PB70AT-1
Max. forward voltage: 1.51V
Max. forward impulse current: 39kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ800N18KOFHPSA3 INFINEON TECHNOLOGIES TZ800N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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BTS3018TCATMA1 INFINEON TECHNOLOGIES Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263
Type of integrated circuit: power switch
Kind of output: N-Channel
Case: PG-TO263
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 18mΩ
Number of channels: 1
Output current: 6A
Technology: HITFET®
Output voltage: 60V
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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BTS3018TCATMA1 INFINEON TECHNOLOGIES Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 INFINEON TECHNOLOGIES BSS215PH6327-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Gate-source voltage: ±12V
Kind of channel: enhancement
Case: PG-SOT23
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.15Ω
Polarisation: unipolar
Power dissipation: 0.5W
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Lieferzeit 14-21 Tag (e)
152+0.56 EUR
214+0.39 EUR
317+0.27 EUR
374+0.23 EUR
532+0.15 EUR
1000+0.14 EUR
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TLD22522EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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BSC0924NDIATMA1 BSC0924NDIATMA1 INFINEON TECHNOLOGIES BSC0924NDI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES IPB107N20N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIMW120R045M1XKSA1 INFINEON TECHNOLOGIES Infineon-AIMW120R045M1-DataSheet-v03_00-EN.pdf?fileId=5546d4626e8d4b8f016e9304fd2e66c4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIMW120R045M1XKSA1 AIMW120R045M1XKSA1 INFINEON TECHNOLOGIES AIMW120R045M1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1612KV18-250BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1612KV18-300BZXI INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
Produkt ist nicht verfügbar
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CY7C1612KV18-360BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
Produkt ist nicht verfügbar
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CY7C1615KV18-250BZXC INFINEON TECHNOLOGIES Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1618KV18-333BZXC INFINEON TECHNOLOGIES Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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IRFR48ZTRLPBF INFINEON TECHNOLOGIES irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Power dissipation: 91W
Case: DPAK; TO252
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS500101TAEATMA1BTS500101TAEATMA1
BTS500101TAEATMA1BTS500101TAEATMA1
 BTS500101TAEATMA1 INFINEON TECHNOLOGIES BTS500101TAE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Produkt ist nicht verfügbar
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CY8C3446LTI-085 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 50MHz; 64kBFLASH; Architecture: 8051
Type of integrated circuit: ARM microcontroller
Clock frequency: 50MHz
Memory: 64kB FLASH
Number of inputs/outputs: 38
Number of PWM channels: 1
Number of 16bit timers: 4
Mounting: SMD
Interface: I2C; SPI; UART; USB
Integrated circuit features: DMA; internal clock oscillator; PoR; PWM
Kind of architecture: 8051
Operating temperature: -40...85°C
Kind of core: 8-bit
Peripherial: DMA; POR
Produkt ist nicht verfügbar
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IAUA180N04S5N012AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N04S5N012-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20182c67740 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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CY14V116G7-BZ30XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 30ns; FBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 30ns
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC; 2.7...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TLE4291EXUMA2 TLE4291EXUMA2 INFINEON TECHNOLOGIES Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 3.3...42V
Produkt ist nicht verfügbar
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IRFR1010ZTRPBF IRFR1010ZTRPBF INFINEON TECHNOLOGIES irfr1010zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Mounting: SMD
Power dissipation: 140W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 91A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Produkt ist nicht verfügbar
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GS0650306LLMRXUMA1 INFINEON TECHNOLOGIES Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
250+10.16 EUR
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BC847PNH6433XTMA1 BC847PNH6433XTMA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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2EDN7524RXTMA1 INFINEON TECHNOLOGIES infineon-2edl50x3u2d-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRFU3910PBF IRFU3910PBF INFINEON TECHNOLOGIES irfr3910.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhancement
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.73 EUR
150+0.68 EUR
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IRFU3607PBF IRFU3607PBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.62 EUR
75+1.31 EUR
Mindestbestellmenge: 53 Stücke
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CY15B064J-SXET INFINEON TECHNOLOGIES Infineon-CY15B064J_64_KBIT_(8K_X_8)_SERIAL_(I2C)_AUTOMOTIVE_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3c5456a7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 3÷3.6VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY15B064J-SXE INFINEON TECHNOLOGIES Infineon-CY15B064J_64_KBIT_(8K_X_8)_SERIAL_(I2C)_AUTOMOTIVE_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3c5456a7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 3÷3.6VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
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CY15B004J-SXA INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
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CY15B004J-SXAT INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY15B004J-SXE INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 485 Stücke
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CY15B004J-SXET INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY15B004Q-SXET INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY15B016Q-SXE INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Case: SOIC8
Interface: SPI
Kind of memory: FRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 485 Stücke
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CY15B016Q-SXET INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Kind of memory: FRAM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY15B064J-SXA INFINEON TECHNOLOGIES Infineon-CY15B064J_64-Kbit_(8_K_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee34b9a6a43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 970 Stücke
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CY15B064Q-SXA INFINEON TECHNOLOGIES Infineon-CY15B064Q_64-Kbit_(8_K_x_8)_Serial_(SPI)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3eedf6a94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 16MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 16MHz
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Case: SOIC8
Interface: SPI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 970 Stücke
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CY15B064Q-SXE INFINEON TECHNOLOGIES Infineon-CY15B064Q_64_KBIT_(8K_X_8)_SERIAL_(SPI)_AUTOMOTIVE_F-RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3d9d16a8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 16MHz
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Case: SOIC8
Interface: SPI
Produkt ist nicht verfügbar
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S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Memory: 2Gb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: in-tray
Interface: octal
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 520 Stücke
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IPB107N20NAATMA1 IPB107N20NA-DTE.pdf
IPB107N20NAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 644 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.75 EUR
Mindestbestellmenge: 10 Stücke
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TLD2314ELXUMA1 TLD2314EL.pdf
TLD2314ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
64+1.34 EUR
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BAS3005S02LRHE6327XTSA1 bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GA.pdf
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+18.91 EUR
Mindestbestellmenge: 5 Stücke
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IGCM20F60GAXKMA1 IGCM20F60GAXKMA1.pdf
IGCM20F60GAXKMA1IGCM20F60GAXKMA1
IGCM20F60GAXKMA1IGCM20F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+19.84 EUR
6+16.79 EUR
Mindestbestellmenge: 5 Stücke
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IKCM10L60GAXKMA1 IKCM10L60GA.pdf
IKCM10L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 25.2W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
280+10.21 EUR
Mindestbestellmenge: 280 Stücke
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IDD03SG60CXTMA2 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IDD03SG60C IDD03SG60C.pdf
IDD03SG60C
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 0.23µA
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Power dissipation: 38W
Technology: CoolSiC™ 3G; SiC
Max. off-state voltage: 0.6kV
Case: PG-TO252-3
Produkt ist nicht verfügbar
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PVI1050NPBFHKLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+9.29 EUR
Mindestbestellmenge: 50 Stücke
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IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF.pdf
IPB020N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPT020N10N3ATMA1 IPT020N10N3-DTE.pdf
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 IPB020N10N5-dte.pdf
IPB020N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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DD1600S33HE4BPSA1 Infineon-DD1600S33HE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191eaef415b350e
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247
Produkt ist nicht verfügbar
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IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 41A
Pulsed drain current: 184A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247-4
Produkt ist nicht verfügbar
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1EDB6275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W
Operating temperature: -40...125°C
Output current: 9A
Type of integrated circuit: driver
Power dissipation: 1.38W
Integrated circuit features: MOSFET
Pulse fall time: 5ns
Case: SOIC8
Kind of integrated circuit: high-side
Number of channels: 1
Impulse rise time: 8.3ns
Topology: H-bridge
Mounting: SMD
Maximum output current: 9A
auf Bestellung 97500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+1.09 EUR
Mindestbestellmenge: 2500 Stücke
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2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Output current: -0.7...0.29A
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Voltage class: 650V
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE9250SJXUMA1 TLE9250.pdf
TLE9250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN-FD
Type of integrated circuit: CAN transceiver
Case: PG-DSO-8
Produkt ist nicht verfügbar
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TZ800N16KOFHPSA3 TZ800N16KOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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TZ810N22KOFHPSA2 TZ810N22KOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 819A
Case: BG-PB70AT-1
Max. forward voltage: 1.51V
Max. forward impulse current: 39kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ800N18KOFHPSA3 TZ800N18KOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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BTS3018TCATMA1 Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263
Type of integrated circuit: power switch
Kind of output: N-Channel
Case: PG-TO263
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 18mΩ
Number of channels: 1
Output current: 6A
Technology: HITFET®
Output voltage: 60V
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BTS3018TCATMA1 Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSS215PH6327XTSA1 BSS215PH6327-DTE.pdf
BSS215PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Gate-source voltage: ±12V
Kind of channel: enhancement
Case: PG-SOT23
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.15Ω
Polarisation: unipolar
Power dissipation: 0.5W
auf Bestellung 1234 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
214+0.39 EUR
317+0.27 EUR
374+0.23 EUR
532+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 152 Stücke
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TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BSC0924NDIATMA1 BSC0924NDI-DTE.pdf
BSC0924NDIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPB107N20N3GATMA1 IPB107N20N3G-DTE.pdf
IPB107N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIMW120R045M1XKSA1 Infineon-AIMW120R045M1-DataSheet-v03_00-EN.pdf?fileId=5546d4626e8d4b8f016e9304fd2e66c4
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIMW120R045M1XKSA1 AIMW120R045M1.pdf
AIMW120R045M1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1612KV18-250BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 525 Stücke
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CY7C1612KV18-300BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
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CY7C1612KV18-360BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
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CY7C1615KV18-250BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1618KV18-333BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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IRFR48ZTRLPBF irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Power dissipation: 91W
Case: DPAK; TO252
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS500101TAEATMA1 BTS500101TAE.pdf
BTS500101TAEATMA1BTS500101TAEATMA1
BTS500101TAEATMA1BTS500101TAEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Produkt ist nicht verfügbar
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CY8C3446LTI-085 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 50MHz; 64kBFLASH; Architecture: 8051
Type of integrated circuit: ARM microcontroller
Clock frequency: 50MHz
Memory: 64kB FLASH
Number of inputs/outputs: 38
Number of PWM channels: 1
Number of 16bit timers: 4
Mounting: SMD
Interface: I2C; SPI; UART; USB
Integrated circuit features: DMA; internal clock oscillator; PoR; PWM
Kind of architecture: 8051
Operating temperature: -40...85°C
Kind of core: 8-bit
Peripherial: DMA; POR
Produkt ist nicht verfügbar
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IAUA180N04S5N012AUMA1 Infineon-IAUA180N04S5N012-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20182c67740
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY14V116G7-BZ30XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 30ns; FBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 30ns
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC; 2.7...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 3.3...42V
Produkt ist nicht verfügbar
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IRFR1010ZTRPBF irfr1010zpbf.pdf
IRFR1010ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Mounting: SMD
Power dissipation: 140W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 91A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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GS0650306LLMRXUMA1 Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+10.16 EUR
Mindestbestellmenge: 250 Stücke
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BC847PNH6433XTMA1 BC846PNH6327.pdf
BC847PNH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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2EDN7524RXTMA1 infineon-2edl50x3u2d-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFU3910PBF description irfr3910.pdf
IRFU3910PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhancement
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
117+0.73 EUR
150+0.68 EUR
Mindestbestellmenge: 117 Stücke
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IRFU3607PBF irfr3607pbf.pdf
IRFU3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
53+1.62 EUR
75+1.31 EUR
Mindestbestellmenge: 53 Stücke
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CY15B064J-SXET Infineon-CY15B064J_64_KBIT_(8K_X_8)_SERIAL_(I2C)_AUTOMOTIVE_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3c5456a7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 3÷3.6VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B064J-SXE Infineon-CY15B064J_64_KBIT_(8K_X_8)_SERIAL_(I2C)_AUTOMOTIVE_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3c5456a7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 3÷3.6VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
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CY15B004J-SXA Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2910 Stücke
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CY15B004J-SXAT Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B004J-SXE Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
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CY15B004J-SXET Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B004Q-SXET CY15B004Q_RevC_6-4-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B016Q-SXE Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Case: SOIC8
Interface: SPI
Kind of memory: FRAM
Produkt ist nicht verfügbar
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CY15B016Q-SXET Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Kind of memory: FRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B064J-SXA Infineon-CY15B064J_64-Kbit_(8_K_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee34b9a6a43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 970 Stücke
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CY15B064Q-SXA Infineon-CY15B064Q_64-Kbit_(8_K_x_8)_Serial_(SPI)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3eedf6a94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 16MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 16MHz
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Case: SOIC8
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 970 Stücke
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CY15B064Q-SXE Infineon-CY15B064Q_64_KBIT_(8K_X_8)_SERIAL_(SPI)_AUTOMOTIVE_F-RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3d9d16a8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 16MHz
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Case: SOIC8
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 97 Stücke
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