Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128414) > Seite 2073 nach 2141
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IR21531STRPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Number of channels: 2 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Input voltage: 10...15.6V Output current: 0.26A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TLS115B0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Number of channels: 1 Input voltage: 4...45V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDWD40G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.65V Max. forward impulse current: 290A Power dissipation: 402W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IKA08N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5 Case: TO220FP Power dissipation: 15.6W Technology: TRENCHSTOP™ 5 Kind of package: tube Collector-emitter voltage: 650V Gate charge: 22nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 24A Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 6.8A Mounting: THT Manufacturer series: F5 |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPZ60R040C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 227W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 3.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-SOT89 On-state resistance: 90mΩ |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PVI5033RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Mounting: SMD Manufacturer series: PVI5033RPbF Kind of output: photodiode Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 2.5ms Case: Gull wing 8 Turn-off time: 5ms Number of channels: 2 |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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PVI5033RS-TPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Mounting: SMD Manufacturer series: PVI5033RPbF Case: Gull wing 8 Type of optocoupler: optocoupler Kind of output: photodiode Turn-off time: 0.5ms Turn-on time: 2.5ms Number of channels: 2 Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
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IRS2982STRPBF | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: LED driver; SMPS controller Case: PG-DSO-8 Output current: 200...400mA Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating voltage: 12.8...18V DC Topology: flyback |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BTS443P | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5...36V DC Technology: High Current PROFET Output voltage: 43V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BTS443PAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5...36V DC Technology: High Current PROFET Output voltage: 43V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PVG612APBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 2A Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C On-state resistance: 0.1Ω Turn-on time: 3.5ms Turn-off time: 0.5ms |
auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFP3710PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 66.7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP3415PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP3703PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BCR08PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 170MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFP4368PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 350A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IR4426STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET Mounting: SMD Output current: 1.5A Type of integrated circuit: driver Operating temperature: -40...125°C Integrated circuit features: MOSFET Case: SOIC8 Kind of integrated circuit: low-side Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPP030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPI030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
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| ISC030N10NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 179A Power dissipation: 208W Case: PG-TDSON-8 FL On-state resistance: 3mΩ Mounting: SMD Gate charge: 55nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPA030N10NF2SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 154nC On-state resistance: 3mΩ Power dissipation: 41W Drain-source voltage: 100V Drain current: 83A Case: TO220FP Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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2ED2106S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -0.7...0.29A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP Integrated circuit features: integrated bootstrap functionality |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPP030N06NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 119A Power dissipation: 150W Case: TO220-3 On-state resistance: 3.05mΩ Mounting: THT Gate charge: 68nC Kind of channel: enhancement |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMBTA06UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 100MHz Kind of transistor: complementary pair |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM24CL16B-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Mounting: SMD Case: SO8 Kind of interface: serial Supply voltage: 2.7...3.65V DC Operating temperature: -40...85°C Clock frequency: 1MHz |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S25FL032P0XMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 32Mb FLASH Interface: SPI Operating frequency: 104MHz Operating voltage: 2.7...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 446 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S25FL064LABMFI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB100N04S4H2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 115W Case: D2PAK-3 On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPC100N04S5-2R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 45nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5-1R9 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 65nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-1R5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB100N04S303ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-1R1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 0.14µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-1R9 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-2R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 55nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2mΩ Mounting: SMD Gate charge: 65nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB7530PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: TO220AB Mounting: THT Kind of channel: enhancement On-state resistance: 2mΩ Trade name: StrongIRFET Gate charge: 274nC Gate-source voltage: ±20V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP7530PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC Mounting: THT Power dissipation: 341W Gate charge: 274nC Polarisation: unipolar Technology: HEXFET® Drain current: 281A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247AC On-state resistance: 2mΩ Trade name: StrongIRFET |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP015N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP015N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 193A Power dissipation: 188W Case: TO220-3 On-state resistance: 1.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 106nC |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISC015N04NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 206A Power dissipation: 115W Case: PG-TDSON-8 On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 51nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TLF50251EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Topology: buck Mounting: SMD Input voltage: 4.75...45V DC Output current: 0.5A Operating temperature: -40...150°C Output voltage: 5V DC Case: SSOP14 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 2.2MHz |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLF50201EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Topology: buck Mounting: SMD Input voltage: 4.75...45V DC Output current: 0.5A Operating temperature: -40...150°C Output voltage: 5V DC Case: SSOP14 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 2.2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S29GL256S10DHA020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Mounting: SMD Access time: 100ns Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Application: automotive Memory: 256Mb FLASH Kind of interface: parallel Kind of package: in-tray Case: BGA64 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65632-48AXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: reel; tape Case: TQFP48 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISA170230C04LMDSXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
|
IRF7389TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.3/-5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BFR181WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 20mA Power dissipation: 0.175W Case: SOT323 Mounting: SMD Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape |
auf Bestellung 10417 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
TLE4906KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Kind of sensor: unipolar Case: SC59 Range of detectable magnetic field: 5...13.5mT Supply voltage: 2.7...18V DC Operating temperature: -40...150°C Mounting: SMT |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
TLE49462KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Kind of sensor: latch Case: SC59 Range of detectable magnetic field: -3.5...3.5mT Supply voltage: 2.7...18V DC Operating temperature: -40...150°C Mounting: SMT |
auf Bestellung 2338 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
TLE4945L | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT Type of sensor: Hall Kind of sensor: bipolar Mounting: THT Operating temperature: -40...150°C Supply voltage: 3.8...24V DC Range of detectable magnetic field: -10...10mT Case: P-SSO-3-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BAT1503WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 4V Load current: 0.11A Semiconductor structure: single diode Max. forward voltage: 0.41V Power dissipation: 0.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BAT1502ELE6327XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAT1504RE6152HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAT15099E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IRLR3103TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Power dissipation: 69W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRFS7430TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 426A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
IKW30N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 39.5A; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Pulsed collector current: 120A Turn-on time: 29ns Turn-off time: 154ns Gate-emitter voltage: ±20V Collector current: 39.5A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IR21531STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 2
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Output current: 0.26A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 2
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...15.6V
Output current: 0.26A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLS115B0LDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDWD40G120C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKA08N65F5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Case: TO220FP
Power dissipation: 15.6W
Technology: TRENCHSTOP™ 5
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 22nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 6.8A
Mounting: THT
Manufacturer series: F5
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| IPZ60R040C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS606NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT89
On-state resistance: 90mΩ
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| PVI5033RSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| PVI5033RS-TPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2982STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS443P |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS443PAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PVG612APBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Turn-on time: 3.5ms
Turn-off time: 0.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Turn-on time: 3.5ms
Turn-off time: 0.5ms
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3710PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3415PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3703PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR08PNH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4368PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR4426STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP030N10N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
| IPI030N10N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISC030N10NM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA030N10NF2SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2106S06FXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP030N06NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBTA06UPNE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM24CL16B-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Supply voltage: 2.7...3.65V DC
Operating temperature: -40...85°C
Clock frequency: 1MHz
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
| S25FL032P0XMFA010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
| S25FL064LABMFI010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB100N04S4H2ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5-2R8 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5-1R9 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-1R5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB100N04S303ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-1R1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-1R9 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-2R6 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6L014ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6L020ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFB7530PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP7530PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Power dissipation: 341W
Gate charge: 274nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 281A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 2mΩ
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Power dissipation: 341W
Gate charge: 274nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 281A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 2mΩ
Trade name: StrongIRFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP015N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP015N04NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| ISC015N04NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| TLF50251EL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| TLF50201EL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL256S10DHA020 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Application: automotive
Memory: 256Mb FLASH
Kind of interface: parallel
Kind of package: in-tray
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Application: automotive
Memory: 256Mb FLASH
Kind of interface: parallel
Kind of package: in-tray
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65632-48AXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ISA170230C04LMDSXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| IRF7389TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFR181WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 10417 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE4906KHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE49462KHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE4945L |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT1503WE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT1502ELE6327XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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Stück im Wert von UAH
| BAT1504RE6152HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT15099E6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| IRLR3103TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IRFS7430TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)