Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128360) > Seite 2073 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPB100N04S303ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-1R1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 0.14µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-1R9 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC100N04S5L-2R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 55nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2mΩ Mounting: SMD Gate charge: 65nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB7530PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: TO220AB Mounting: THT Kind of channel: enhancement On-state resistance: 2mΩ Trade name: StrongIRFET Gate charge: 274nC Gate-source voltage: ±20V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP7530PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC Mounting: THT Power dissipation: 341W Gate charge: 274nC Polarisation: unipolar Technology: HEXFET® Drain current: 281A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247AC On-state resistance: 2mΩ Trade name: StrongIRFET |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP015N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP015N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 193A Power dissipation: 188W Case: TO220-3 On-state resistance: 1.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 106nC |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISC015N04NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 206A Power dissipation: 115W Case: PG-TDSON-8 On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 51nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TLF50251EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Topology: buck Mounting: SMD Input voltage: 4.75...45V DC Output current: 0.5A Operating temperature: -40...150°C Output voltage: 5V DC Case: SSOP14 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 2.2MHz |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLF50201EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Topology: buck Mounting: SMD Input voltage: 4.75...45V DC Output current: 0.5A Operating temperature: -40...150°C Output voltage: 5V DC Case: SSOP14 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 2.2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S29GL256S10DHA020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Mounting: SMD Access time: 100ns Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Application: automotive Memory: 256Mb FLASH Kind of interface: parallel Kind of package: in-tray Case: BGA64 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65632-48AXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: reel; tape Case: TQFP48 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISA170230C04LMDSXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7389TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.3/-5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BFR181WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 20mA Power dissipation: 0.175W Case: SOT323 Mounting: SMD Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape |
auf Bestellung 10417 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLE4906KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Kind of sensor: unipolar Case: SC59 Range of detectable magnetic field: 5...13.5mT Supply voltage: 2.7...18V DC Operating temperature: -40...150°C Mounting: SMT |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLE49462KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Kind of sensor: latch Case: SC59 Range of detectable magnetic field: -3.5...3.5mT Supply voltage: 2.7...18V DC Operating temperature: -40...150°C Mounting: SMT |
auf Bestellung 2338 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLE4945L | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT Type of sensor: Hall Kind of sensor: bipolar Mounting: THT Operating temperature: -40...150°C Supply voltage: 3.8...24V DC Range of detectable magnetic field: -10...10mT Case: P-SSO-3-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAT1503WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 4V Load current: 0.11A Semiconductor structure: single diode Max. forward voltage: 0.41V Power dissipation: 0.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BAT1502ELE6327XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAT1504RE6152HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAT15099E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRLR3103TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Power dissipation: 69W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFS7430TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 426A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 39.5A; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Pulsed collector current: 120A Turn-on time: 29ns Turn-off time: 154ns Gate-emitter voltage: ±20V Collector current: 39.5A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7413ZTRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BFR106E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 16V Collector current: 0.21A Power dissipation: 0.7W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 5GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB4510PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 62A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5803TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.4A Power dissipation: 1.3W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 9314 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAS4004E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSP62H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: TO261-4 Mounting: SMD Frequency: 200MHz Application: automotive industry Current gain: 2k |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BFR92PE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23 Type of transistor: NPN Collector current: 45mA Mounting: SMD Collector-emitter voltage: 15V Power dissipation: 0.28W Polarisation: bipolar Kind of transistor: RF Kind of package: reel; tape Case: SOT23 Frequency: 5GHz |
auf Bestellung 3072 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR540ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Case: DPAK Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR7540TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 140W Case: DPAK On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB4310PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 7mΩ Power dissipation: 330W Gate charge: 170nC Technology: HEXFET® Gate-source voltage: ±20V |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS5030-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8 Output current: 4A Type of integrated circuit: power switch Kind of output: N-Channel Power dissipation: 1.9W Technology: PROFET™+ 12V Case: PG-DSO-8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 60mΩ Mounting: SMD Supply voltage: 5...28V DC |
auf Bestellung 569 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 846 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB5620PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB3307PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1254 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB7730PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB Mounting: THT Power dissipation: 375W Polarisation: unipolar Technology: HEXFET® Drain current: 246A Kind of channel: enhancement Drain-source voltage: 75V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 2.2mΩ |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB4332PbF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB On-state resistance: 3.3mΩ Trade name: StrongIRFET Mounting: THT Power dissipation: 230W Gate charge: 142nC Polarisation: unipolar Technology: HEXFET® Drain current: 173A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB |
auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB3307ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPA60R190P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 722 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAT6202VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW Type of diode: Schottky switching Case: SC79 Mounting: SMD Max. off-state voltage: 40V Load current: 20mA Semiconductor structure: single diode Max. forward voltage: 1V Power dissipation: 0.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAT62E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 40V Load current: 20mA Semiconductor structure: double independent Max. forward voltage: 1V Power dissipation: 0.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1018EPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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| BGA524N6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiersDescription: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape Type of integrated circuit: RF amplifier Bandwidth: 1550...1615MHz Number of channels: 1 Mounting: SMT Voltage supply range: 1.5...3.3V DC Case: TSNP6 Operating temperature: -40...85°C Integrated circuit features: low noise Kind of package: reel; tape Application: global navigation satellite systems (GPS) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
CY8C28452-24PVXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH Interface: GPIO; I2C; SPI; UART Mounting: SMD Case: SSOP28 Operating temperature: -40...85°C Supply voltage: 3...5.25V DC Number of inputs/outputs: 24 Memory: 1kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 8-bit Type of integrated circuit: PSoC microcontroller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL40SC209 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 478A Power dissipation: 375W Case: D2PAK-7 On-state resistance: 0.6mΩ Mounting: SMD Gate charge: 267nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
ICE3BR4765JGXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: PG-DSO-12 Mounting: SMD Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...80% Power: 24/16.5W Application: SMPS Operating voltage: 10.5...25V DC Output current: 2.32A |
auf Bestellung 719 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BTS3800SL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.35A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SCT595 On-state resistance: 0.8Ω Technology: HITFET® Operating temperature: -40...150°C Turn-on time: 3µs Turn-off time: 3µs |
auf Bestellung 684 Stücke: Lieferzeit 14-21 Tag (e) |
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CY8C3866AXI-040 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH Type of integrated circuit: PSoC microcontroller Case: TQFP100 Mounting: SMD Number of inputs/outputs: 72 Operating temperature: -40...85°C Integrated circuit features: watchdog Clock frequency: 67MHz Kind of core: 8-bit Memory: 8kB SRAM; 64kB FLASH Interface: GPIO; I2C; SPI; UART; USB Supply voltage: 1.71...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY8C4126LTI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: QFN68 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 55 Memory: 8kB SRAM; 64kB FLASH Clock frequency: 24MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C5868AXI-LP032 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP100 Number of inputs/outputs: 72 Supply voltage: 1.71...5.5V DC Operating temperature: -40...85°C Kind of core: 32-bit Interface: GPIO; I2C; SPI; UART; USB Integrated circuit features: watchdog Memory: 64kB SRAM; 256kB FLASH Clock frequency: 67MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
CY8C5868AXI-LP035 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH Interface: GPIO; I2C; SPI; UART; USB Clock frequency: 67MHz Integrated circuit features: watchdog Kind of core: 32-bit Memory: 64kB SRAM; 256kB FLASH Case: TQFP100 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 72 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB100N04S303ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-1R1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-1R9 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC100N04S5L-2R6 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6L014ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6L020ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFB7530PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP7530PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Power dissipation: 341W
Gate charge: 274nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 281A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 2mΩ
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Power dissipation: 341W
Gate charge: 274nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 281A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 2mΩ
Trade name: StrongIRFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP015N04NGXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP015N04NF2SAKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| ISC015N04NM5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| TLF50251EL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| TLF50201EL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Topology: buck
Mounting: SMD
Input voltage: 4.75...45V DC
Output current: 0.5A
Operating temperature: -40...150°C
Output voltage: 5V DC
Case: SSOP14
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL256S10DHA020 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Application: automotive
Memory: 256Mb FLASH
Kind of interface: parallel
Kind of package: in-tray
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Application: automotive
Memory: 256Mb FLASH
Kind of interface: parallel
Kind of package: in-tray
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
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| CY7C65632-48AXCT |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ISA170230C04LMDSXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7389TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFR181WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 10417 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE4906KHTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE49462KHTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE4945L |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT1503WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT1502ELE6327XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| BAT1504RE6152HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BAT15099E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| IRLR3103TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7430TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7413ZTRPBFXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFR106E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 16V
Collector current: 0.21A
Power dissipation: 0.7W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 16V
Collector current: 0.21A
Power dissipation: 0.7W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB4510PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF5803TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9314 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS4004E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP62H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Current gain: 2k
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Current gain: 2k
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| BFR92PE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Collector current: 45mA
Mounting: SMD
Collector-emitter voltage: 15V
Power dissipation: 0.28W
Polarisation: bipolar
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT23
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Collector current: 45mA
Mounting: SMD
Collector-emitter voltage: 15V
Power dissipation: 0.28W
Polarisation: bipolar
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT23
Frequency: 5GHz
auf Bestellung 3072 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR540ZTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR7540TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFB4310PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Power dissipation: 330W
Gate charge: 170nC
Technology: HEXFET®
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Power dissipation: 330W
Gate charge: 170nC
Technology: HEXFET®
Gate-source voltage: ±20V
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS5030-1EJA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 1.9W
Technology: PROFET™+ 12V
Case: PG-DSO-8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 60mΩ
Mounting: SMD
Supply voltage: 5...28V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 1.9W
Technology: PROFET™+ 12V
Case: PG-DSO-8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 60mΩ
Mounting: SMD
Supply voltage: 5...28V DC
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB4410ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 846 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB5620PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB3307PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1254 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7730PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 246A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 2.2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 246A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 2.2mΩ
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB4332PbF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7537PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Mounting: THT
Power dissipation: 230W
Gate charge: 142nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 173A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Mounting: THT
Power dissipation: 230W
Gate charge: 142nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 173A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB3307ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
| IPA60R190P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT6202VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAT62E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF1018EPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| BGA524N6E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CY8C28452-24PVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRL40SC209 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 0.6mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 0.6mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
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| ICE3BR4765JGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC340N08NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS3800SL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
| CY8C3866AXI-040 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Number of inputs/outputs: 72
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 8-bit
Memory: 8kB SRAM; 64kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
Supply voltage: 1.71...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Number of inputs/outputs: 72
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 8-bit
Memory: 8kB SRAM; 64kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
Supply voltage: 1.71...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4126LTI-M445 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
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| CY8C5868AXI-LP032 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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| CY8C5868AXI-LP035 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Interface: GPIO; I2C; SPI; UART; USB
Clock frequency: 67MHz
Integrated circuit features: watchdog
Kind of core: 32-bit
Memory: 64kB SRAM; 256kB FLASH
Case: TQFP100
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Interface: GPIO; I2C; SPI; UART; USB
Clock frequency: 67MHz
Integrated circuit features: watchdog
Kind of core: 32-bit
Memory: 64kB SRAM; 256kB FLASH
Case: TQFP100
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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