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BAT2402LSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Mounting: SMD
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Mounting: THT
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
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IR2118STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRFI4212H-117P IRFI4212H-117P INFINEON TECHNOLOGIES irfi4212h-117p.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 18W
Case: TO220FP-5
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
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IPD130N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DPAK3
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of channel: enhancement
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ISZ230N10NM6ATMA1 INFINEON TECHNOLOGIES infineon-isz230n10nm6-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8 FL
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
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IPD30N10S3L34ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 25000 Stücke:
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2500+0.93 EUR
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CY8C4124PVI-442T CY8C4124PVI-442T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 16kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
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CY8C4014PVI-422 CY8C4014PVI-422 INFINEON TECHNOLOGIES CY8C4014LQI-412.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH
Interface: GPIO; I2C
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 20
Memory: 2kB SRAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense
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CY8C4125PVI-482 CY8C4125PVI-482 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
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CY8C4245PVI-482 CY8C4245PVI-482 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
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CY8C4124PVI-432 CY8C4124PVI-432 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
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BGSX24MU16E6327XUSA1 INFINEON TECHNOLOGIES Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Interface: MIPI
Bandwidth: 0.1...5GHz
Application: telecommunication
Output configuration: DP4T
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BGSX24MU16E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Category: Analog multiplexers and switches
Description: IC: RF switch
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4500+1.04 EUR
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BGSX44MA12E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSX44MA12-DataSheet-v02_02-EN.pdf?fileId=5546d462773f9324017744a682e24a43 Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Mounting: SMD
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S25FL256SAGMFI011 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BCR431UXTSA1 BCR431UXTSA1 INFINEON TECHNOLOGIES Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
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193+0.44 EUR
236+0.36 EUR
262+0.32 EUR
291+0.3 EUR
302+0.29 EUR
313+0.27 EUR
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
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50+8.07 EUR
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BSR92PH6327XTSA1 BSR92PH6327XTSA1 INFINEON TECHNOLOGIES BSR92PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -110mA
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SC59
On-state resistance: 20Ω
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BSP92PH6327XTSA1 BSP92PH6327XTSA1 INFINEON TECHNOLOGIES BSP92PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -260mA
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 12Ω
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79+1.09 EUR
125+0.68 EUR
190+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.29 EUR
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES BSS192PH6327FTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.19A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Power dissipation: 1W
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84+1.02 EUR
117+0.73 EUR
200+0.43 EUR
250+0.36 EUR
500+0.31 EUR
1000+0.27 EUR
2000+0.25 EUR
3000+0.24 EUR
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D1251S45TXPSA1 INFINEON TECHNOLOGIES Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Number of channels: 1
Mounting: SMD
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...35V
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38+2.3 EUR
42+2.06 EUR
50+1.75 EUR
100+1.63 EUR
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxy12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Protection: undervoltage UVP
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES 1EDI20N12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
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1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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1EDI3033ASXUMA1 INFINEON TECHNOLOGIES infineon-1edi3033as-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Integrated circuit features: MOSFET
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Produkt ist nicht verfügbar
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1EDI10I12MFXUMA1 1EDI10I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI2010ASXUMA1 INFINEON TECHNOLOGIES 1EDI2010AS.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-36
Topology: single transistor
Interface: SPI
Output current: -1...1A
Number of channels: 1
Supply voltage: 4.65...5.5V; 13...18V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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1EDI20I12AFXUMA1 1EDI20I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
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1EDI3030ASXUMA1 INFINEON TECHNOLOGIES 1EDI3020ASXUMA1.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
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1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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ISC019N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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ISC058N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
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IPB320P10LMATMA1 INFINEON TECHNOLOGIES Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES IPB320N20N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES BSC032NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
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BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 INFINEON TECHNOLOGIES BSC320N20NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Kind of channel: enhancement
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IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 364A
Technology: OptiMOS™ 5
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IPD320N20N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
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XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4700
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
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XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
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2ED2184S06FXUMA1 2ED2184S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2184-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
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2ED21844S06JXUMA1 INFINEON TECHNOLOGIES infineon-2ed2184-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
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IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 25.2W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
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6+15.27 EUR
7+12.95 EUR
14+11.71 EUR
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES IKCM15L60GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Output voltage: 600V
Input voltage: 13.5...18.5V
Maximum output current: 15A
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TLE42754DATMA1 TLE42754DATMA1 INFINEON TECHNOLOGIES Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...42V
Output current: 0.45A
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-TO252-5
Number of channels: 1
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45+1.9 EUR
59+1.45 EUR
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 5V
Input voltage: 5.5...45V
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40+2.14 EUR
44+1.94 EUR
48+1.81 EUR
100+1.67 EUR
250+1.54 EUR
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ50N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 82A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
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IKY50N120CH3XKSA1 INFINEON TECHNOLOGIES IKY50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 173W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES BAS170WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 70V
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193+0.44 EUR
230+0.37 EUR
264+0.32 EUR
435+0.19 EUR
596+0.14 EUR
1000+0.13 EUR
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BAT2402LSE6327XTSA1 Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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IR2118SPBF description ir2117.pdf
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Mounting: SMD
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
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IR2118PBF ir2117.pdf
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Mounting: THT
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
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IR2118STRPBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRFI4212H-117P irfi4212h-117p.pdf
IRFI4212H-117P
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 18W
Case: TO220FP-5
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
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IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DPAK3
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISZ230N10NM6ATMA1 infineon-isz230n10nm6-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8 FL
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD30N10S3L34ATMA2 Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.93 EUR
Mindestbestellmenge: 2500 Stücke
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CY8C4124PVI-442T Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124PVI-442T
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 16kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4014PVI-422 CY8C4014LQI-412.pdf
CY8C4014PVI-422
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH
Interface: GPIO; I2C
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 20
Memory: 2kB SRAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense
Produkt ist nicht verfügbar
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CY8C4125PVI-482 CY8C4124AXI-443.pdf
CY8C4125PVI-482
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4245PVI-482 CY8C4244LQI-443.pdf
CY8C4245PVI-482
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4124PVI-432 CY8C4124AXI-443.pdf
CY8C4124PVI-432
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
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BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Interface: MIPI
Bandwidth: 0.1...5GHz
Application: telecommunication
Output configuration: DP4T
Produkt ist nicht verfügbar
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BGSX24MU16E6327XTSA1 Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4500+1.04 EUR
Mindestbestellmenge: 4500 Stücke
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BGSX44MA12E6327XTSA1 Infineon-BGSX44MA12-DataSheet-v02_02-EN.pdf?fileId=5546d462773f9324017744a682e24a43
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Mounting: SMD
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4500+0.79 EUR
Mindestbestellmenge: 4500 Stücke
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S25FL256SAGMFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 47 Stücke
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BCR431UXTSA1 Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a
BCR431UXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
236+0.36 EUR
262+0.32 EUR
291+0.3 EUR
302+0.29 EUR
313+0.27 EUR
Mindestbestellmenge: 193 Stücke
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 870 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+8.07 EUR
Mindestbestellmenge: 50 Stücke
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BSR92PH6327XTSA1 BSR92PH6327XTSA1.pdf
BSR92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -110mA
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SC59
On-state resistance: 20Ω
Produkt ist nicht verfügbar
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BSP92PH6327XTSA1 BSP92PH6327XTSA1-dte.pdf
BSP92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -260mA
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 12Ω
auf Bestellung 2243 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
79+1.09 EUR
125+0.68 EUR
190+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.29 EUR
Mindestbestellmenge: 79 Stücke
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BSS192PH6327FTSA1 BSS192PH6327FTSA1-dte.pdf
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.19A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Power dissipation: 1W
auf Bestellung 3441 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
84+1.02 EUR
117+0.73 EUR
200+0.43 EUR
250+0.36 EUR
500+0.31 EUR
1000+0.27 EUR
2000+0.25 EUR
3000+0.24 EUR
Mindestbestellmenge: 84 Stücke
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D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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1EDI05I12AFXUMA1 1EDIxxI12AF.pdf
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Number of channels: 1
Mounting: SMD
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...35V
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
38+2.3 EUR
42+2.06 EUR
50+1.75 EUR
100+1.63 EUR
Mindestbestellmenge: 38 Stücke
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1EDI60N12AFXUMA1 1EDIxxy12AF.pdf
1EDI60N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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1EDI20N12AFXUMA1 1EDI20N12AF.pdf
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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1EDI40I12AFXUMA1 1EDIxxI12AF.pdf
1EDI40I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI60I12AFXUMA1 1EDIxxI12AF.pdf
1EDI60I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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1EDI3033ASXUMA1 infineon-1edi3033as-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Integrated circuit features: MOSFET
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI10I12MFXUMA1 1EDIxxI12MF.pdf
1EDI10I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI2010ASXUMA1 1EDI2010AS.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-36
Topology: single transistor
Interface: SPI
Output current: -1...1A
Number of channels: 1
Supply voltage: 4.65...5.5V; 13...18V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI20I12AFXUMA1 1EDIxxI12AF.pdf
1EDI20I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20I12MFXUMA1 1EDIxxI12MF.pdf
1EDI20I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI3030ASXUMA1 1EDI3020ASXUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDI30I12MFXUMA1 1EDIxxI12MF.pdf
1EDI30I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+0.46 EUR
Mindestbestellmenge: 5000 Stücke
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IPB320P10LMATMA1 Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 IPB320N20N3G-DTE.pdf
IPB320N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC032NE2LSATMA1 BSC032NE2LS-DTE.pdf
BSC032NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC320N20NS3GATMA1 BSC320N20NS3G-DTE.pdf
BSC320N20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
IAUC120N06S5L032ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD320N20N3GATMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+2.02 EUR
Mindestbestellmenge: 2500 Stücke
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XMC4700E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4700
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Produkt ist nicht verfügbar
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XMC4800E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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XMC4800E196K1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196K1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Produkt ist nicht verfügbar
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2ED2184S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2184S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
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2ED21844S06JXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRFR3607TRPBF irfr3607pbf.pdf
IRFR3607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 25.2W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.27 EUR
7+12.95 EUR
14+11.71 EUR
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IKCM15L60GDXKMA1 IKCM15L60GD.pdf
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Output voltage: 600V
Input voltage: 13.5...18.5V
Maximum output current: 15A
Produkt ist nicht verfügbar
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TLE42754DATMA1 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754DATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...42V
Output current: 0.45A
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-TO252-5
Number of channels: 1
auf Bestellung 2217 Stücke:
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45+1.9 EUR
59+1.45 EUR
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TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.14 EUR
44+1.94 EUR
48+1.81 EUR
100+1.67 EUR
250+1.54 EUR
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IKQ50N120CT2XKSA1 IKQ50N120CT2.pdf
IKQ50N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 82A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IKY50N120CH3XKSA1 IKY50N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 173W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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BAS170WE6327HTSA1 BAS170WE6327HTSA1.pdf
BAS170WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 70V
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
230+0.37 EUR
264+0.32 EUR
435+0.19 EUR
596+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 193 Stücke
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