Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128405) > Seite 2068 nach 2141
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IRFB7446PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 123A Power dissipation: 99W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF7832TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Technology: HEXFET® Drain current: 20A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel Case: SO8 |
auf Bestellung 3347 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BSP135H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.12A Kind of channel: depletion Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT223 On-state resistance: 60Ω Mounting: SMD |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS2101SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Topology: MOSFET half-bridge Mounting: SMD Supply voltage: 10...20V DC Output current: -600...290mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 230ns Power: 625mW Kind of package: tube Case: SO8 Turn-off time: 185ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Part status: Not recommended for new designs |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAT1705WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Power dissipation: 0.15W |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAT6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.8A Max. forward voltage: 0.75V Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common cathode; double Type of diode: Schottky switching |
auf Bestellung 1575 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BTS6143D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 33A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 Supply voltage: 5.5...38V DC Technology: High Current PROFET |
auf Bestellung 1364 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A Case: AG-EASY1BM-2 Electrical mounting: Press-Fit Polarisation: unipolar On-state resistance: 45mΩ Pulsed drain current: 50A Technology: CoolSiC™; SiC Gate-source voltage: -10...20V Mechanical mounting: screw Topology: MOSFET half-bridge; NTC thermistor |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS2104SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 185ns |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BSS84PH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.14A Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.37nC Kind of package: reel Kind of channel: enhancement Technology: SIPMOS™ |
auf Bestellung 2182 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
BAT6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.8A Max. forward voltage: 0.75V Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: double series Type of diode: Schottky switching |
auf Bestellung 1263 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAT6406WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.8A Max. forward voltage: 0.75V Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common anode; double Type of diode: Schottky switching |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IR11672ASTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver Mounting: SMD Case: SO8 Supply voltage: 11.4...18V DC Output current: -7...2A Operating temperature: -40...125°C Application: SMPS Voltage class: 200V Power: 625mW Kind of package: reel; tape Topology: flyback; push-pull; resonant LLC |
auf Bestellung 2464 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAS7004WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Type of diode: Schottky switching |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
auf Bestellung 2386 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FM24C64B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 4.5...5.5V DC Clock frequency: 1MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
IRS21531DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Supply voltage: 10.1...16.8V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Power: 625mW Turn-off time: 50ns Number of channels: 2 Topology: MOSFET half-bridge Output current: -260...180mA Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality |
auf Bestellung 696 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BCR400WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller Kind of package: reel; tape Output current: 10mA Type of integrated circuit: driver Integrated circuit features: active bias controller Power: 0.33W Case: SOT343 Mounting: SMD Supply voltage: 1.6...18V DC |
auf Bestellung 2866 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS21844STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
auf Bestellung 2254 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BTS724G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.3...7.3A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: SO20 On-state resistance: 22.5mΩ Supply voltage: 5.5...40V DC Technology: Classic PROFET |
auf Bestellung 1257 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
ITS4141NHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.2Ω Supply voltage: 12...45V DC Technology: Industrial PROFET Power dissipation: 1.4W Operating temperature: -30...85°C Turn-on time: 150µs Kind of package: reel; tape Turn-off time: 0.1ms |
auf Bestellung 1317 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAS4007WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW Mounting: SMD Case: SOT343 Max. forward impulse current: 0.2A Max. forward voltage: 1V Power dissipation: 0.25W Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BAS7005WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Power dissipation: 0.25W |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
ITS5215L | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.7A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: BSOP12 On-state resistance: 70mΩ Supply voltage: 5.5...40V DC Technology: Industrial PROFET |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IKD04N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 75W Case: DPAK Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 12A Gate-emitter voltage: ±20V Collector current: 4A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFP4468PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 290A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
IRFP4568PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 171A Power dissipation: 517W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFP4668PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 130A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 9.7mΩ Mounting: THT Gate charge: 161nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF7103TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8 Mounting: SMD Polarisation: unipolar Drain current: 3A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO8 |
auf Bestellung 3996 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF7341GTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3501 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF7341TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.7A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3349 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFP4110PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFP3077PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 200A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS2153DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IRFB3077PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFB3306PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 994 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFB7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 409A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFB3207PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
SI4435DYTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.4A Pulsed drain current: -50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 67mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2285 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF100B201 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 738 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BC817UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 170MHz |
auf Bestellung 2229 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS2103STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Mounting: SMD Power: 625mW Operating temperature: -40...125°C Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: MOSFET half-bridge Supply voltage: 10...20V DC Output current: -600...290mA Type of integrated circuit: driver Voltage class: 600V Turn-on time: 750ns Kind of package: reel; tape Case: SO8 Turn-off time: 185ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
ITS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 4.9...60V DC Technology: Industrial PROFET |
auf Bestellung 3198 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.23A Kind of channel: depletion Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8Ω |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BCR402WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Case: SOT343 Mounting: SMD Output current: 20...60mA Type of integrated circuit: driver Integrated circuit features: linear dimming Kind of integrated circuit: current regulator; LED driver Number of channels: 1 Operating voltage: 1.2...18V DC Topology: single transistor |
auf Bestellung 2972 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFB3006GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Mounting: SMD Operating voltage: 10.5...26V DC Integrated circuit features: phase-cut dimming; soft-start function Topology: flyback Number of channels: 1 |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS25401PBF | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W Type of integrated circuit: driver Topology: buck Kind of integrated circuit: high-/low-side; LED driver Case: DIP8 Output current: -700...500mA Power: 1W Number of channels: 2 Supply voltage: 8...16.6V DC Mounting: THT Operating temperature: -25...125°C Kind of package: tube Voltage class: 200V Turn-on time: 320ns Turn-off time: 180ns |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IPP147N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3 Mounting: THT Power dissipation: 107W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 56A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 14.7mΩ |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFR4620TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IRS2106STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
BAT5404WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW Power dissipation: 0.23W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Type of diode: Schottky switching |
auf Bestellung 2691 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAT5405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW Power dissipation: 0.23W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Type of diode: Schottky switching |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPF042N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7 Mounting: SMD Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 4.25mΩ Pulsed drain current: 556A Power dissipation: 167W Gate charge: 57nC Polarisation: unipolar Technology: StrongIRFET™ 2 Drain current: 139A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
BSS138IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Gate charge: 1nC |
auf Bestellung 2317 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IPD50N06S214ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 52nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IPD30N06S2L23ATMA3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Power dissipation: 100W Case: DPAK; TO252 On-state resistance: 15.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 33nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IPD096N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 73A Power dissipation: 100W Case: DPAK; TO252 On-state resistance: 7.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 35nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFB7446PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7832TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel
Case: SO8
auf Bestellung 3347 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP135H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 60Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 60Ω
Mounting: SMD
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2101SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 230ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 185ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Part status: Not recommended for new designs
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 230ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 185ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Part status: Not recommended for new designs
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT1705WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT6405WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.8A
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.8A
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 1575 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS6143D |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 1364 Stücke:
Lieferzeit 14-21 Tag (e)
| FF45MR12W1M1B11BOMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2104SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS84PH6327XTSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 2182 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT6404WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.8A
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.8A
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 1263 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT6406WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.8A
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.8A
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
| IR11672ASTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SO8
Supply voltage: 11.4...18V DC
Output current: -7...2A
Operating temperature: -40...125°C
Application: SMPS
Voltage class: 200V
Power: 625mW
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SO8
Supply voltage: 11.4...18V DC
Output current: -7...2A
Operating temperature: -40...125°C
Application: SMPS
Voltage class: 200V
Power: 625mW
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS7004WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2184STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2386 Stücke:
Lieferzeit 14-21 Tag (e)
| FM24C64B-GTR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21531DSTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Power: 625mW
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Power: 625mW
Turn-off time: 50ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -260...180mA
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 696 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR400WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Output current: 10mA
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Power: 0.33W
Case: SOT343
Mounting: SMD
Supply voltage: 1.6...18V DC
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Output current: 10mA
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Power: 0.33W
Case: SOT343
Mounting: SMD
Supply voltage: 1.6...18V DC
auf Bestellung 2866 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS21844STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS724G |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 1257 Stücke:
Lieferzeit 14-21 Tag (e)
| ITS4141NHUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Power dissipation: 1.4W
Operating temperature: -30...85°C
Turn-on time: 150µs
Kind of package: reel; tape
Turn-off time: 0.1ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Power dissipation: 1.4W
Operating temperature: -30...85°C
Turn-on time: 150µs
Kind of package: reel; tape
Turn-off time: 0.1ms
auf Bestellung 1317 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS4007WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Case: SOT343
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Case: SOT343
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS7005WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| ITS5215L |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD04N60RFATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP4468PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP4568PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP4668PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7103TRPBFXTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
auf Bestellung 3996 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7341GTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3501 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7341TRPBFXTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3349 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4110PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3077PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2153DSTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFB3077PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB3306PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 994 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7430PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB3207PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4435DYTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSO211PHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF100B201 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
| BC817UE6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2103STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 750ns
Kind of package: reel; tape
Case: SO8
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 750ns
Kind of package: reel; tape
Case: SO8
Turn-off time: 185ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ITS4140N |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 3198 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS159NH6327XTSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.23A
Kind of channel: depletion
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.23A
Kind of channel: depletion
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8Ω
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR402WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.2...18V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.2...18V DC
Topology: single transistor
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB3006GPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICL8001GXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Topology: flyback
Number of channels: 1
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Topology: flyback
Number of channels: 1
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS25401PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Power: 1W
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Power: 1W
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP147N12N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 14.7mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 14.7mΩ
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR4620TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB042N10N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2106STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT5404WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 2691 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT5405WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
| IPF042N10NF2SATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 4.25mΩ
Pulsed drain current: 556A
Power dissipation: 167W
Gate charge: 57nC
Polarisation: unipolar
Technology: StrongIRFET™ 2
Drain current: 139A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 4.25mΩ
Pulsed drain current: 556A
Power dissipation: 167W
Gate charge: 57nC
Polarisation: unipolar
Technology: StrongIRFET™ 2
Drain current: 139A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138IXTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 2317 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD50N06S214ATMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD30N06S2L23ATMA3 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD096N08N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 35nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 35nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH






































