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IPA040N06NM5SXKSA1 IPA040N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 288A
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Kind of package: tube
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IAUZ40N06S5L050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of channel: enhancement
Pulsed drain current: 252A
Technology: OptiMOS™ 5
Gate-source voltage: ±16V
Kind of package: reel; tape
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IAUZ40N06S5N050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Pulsed drain current: 241A
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Kind of package: reel; tape
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IAUZ40N06S5N105ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Pulsed drain current: 120A
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Kind of package: reel; tape
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1EDC40I12AHXUMA1 1EDC40I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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1EDC20I12AHXUMA1 1EDC20I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...35V
auf Bestellung 566 Stücke:
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25+3.4 EUR
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ISP14EP15LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.29A; 5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.29A
Power dissipation: 5W
Case: SOT223
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of channel: enhancement
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S29GL01GT12DHN010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
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S29GL01GT12DHN013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
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S29GL01GT12DHVV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
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S29GL512T12DHN010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
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S29GL512T12DHN020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
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IRFR2607ZTRPBF IRFR2607ZTRPBF INFINEON TECHNOLOGIES IRFR2607ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
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BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES BSC030N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
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IPP60R280P6XKSA1 IPP60R280P6XKSA1 INFINEON TECHNOLOGIES IPP60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES IPW60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY15B016J-SXA INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Case: SOIC8
Interface: I2C
Kind of memory: FRAM
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CY15B016J-SXAT INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Kind of memory: FRAM
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CY15B016J-SXET INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Clock frequency: 3.4MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Kind of memory: FRAM
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CY15B256J-SXA INFINEON TECHNOLOGIES Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
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CY15B256J-SXAT INFINEON TECHNOLOGIES Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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CY15B256J-SXE INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
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CY15B256J-SXET INFINEON TECHNOLOGIES Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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TC297TX128F300NBCKXUMA1 INFINEON TECHNOLOGIES Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; Core: 32-bit
Type of integrated circuit: microcontroller
Mounting: SMD
Kind of core: 32-bit
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1000+92.88 EUR
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES AIKQ120N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
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PVT312SPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 190mA
Manufacturer series: PV
Relay variant: PhotoMOS
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
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50+6.41 EUR
100+5.77 EUR
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BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES BSB280N15NZ3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
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CY7C25652KV18-400BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 400MHz
Memory organisation: 2Mx36bit
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CY7C25652KV18-500BZXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 500MHz
Memory organisation: 2Mx36bit
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IPD60R380C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Mounting: SMD
Case: PG-TO252
Pulsed drain current: 30A
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
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IPD60R380P6ATMA1 IPD60R380P6ATMA1 INFINEON TECHNOLOGIES Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.38Ω
Produkt ist nicht verfügbar
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IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R3K4CEAUMA1 IPD60R3K4CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 29W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 3.17Ω
Mounting: SMD
Power dissipation: 29W
Gate charge: 4.6nC
Polarisation: unipolar
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: DPAK; TO252
Produkt ist nicht verfügbar
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES BSP89H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT059N15N3ATMA1 IPT059N15N3ATMA1 INFINEON TECHNOLOGIES IPT059N15N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES IKCM10H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 23.1W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
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7+12.61 EUR
8+11.79 EUR
10+10.45 EUR
14+10.26 EUR
Mindestbestellmenge: 7 Stücke
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IRGP4263DPBF IRGP4263DPBF INFINEON TECHNOLOGIES IRGP4263DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Power dissipation: 325W
Collector current: 90A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES irfl4310pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP842ESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 3.7V; 40mA; 120mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 3.7V
Collector current: 40mA
Power dissipation: 0.12W
Case: SOT343
Current gain: 150
Mounting: SMD
Frequency: 60GHz
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3000+0.37 EUR
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES irf7425pbf.pdf irf7425pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 590 Stücke:
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66+1.3 EUR
88+0.98 EUR
100+0.86 EUR
109+0.79 EUR
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IRF7240TRPBF IRF7240TRPBF INFINEON TECHNOLOGIES irf7240pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDWD50E120D7XKSA1 INFINEON TECHNOLOGIES Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
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IDWD50E65E7XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0 Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
 Mindestbestellmenge: 240 Stücke
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S29JL032J70TFI320 S29JL032J70TFI320 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29JL064J55TFI000 S29JL064J55TFI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29JL032J70TFI420 S29JL032J70TFI420 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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CY9BF416NPMC-G-JNE2 INFINEON TECHNOLOGIES download Category: ST microcontrollers
Description: CY9BF416NPMC-G-JNE2
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
90+5.7 EUR
Mindestbestellmenge: 90 Stücke
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IMZA65R083M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R083M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c878f3c6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 104W
Case: TO247-4
On-state resistance: 111mΩ
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA65R029CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPZA65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730948d81344e8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 69A
Power dissipation: 305W
Case: TO247-4
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 145nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 240 Stücke
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T560N16TOFXPSA1 T560N16TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Mounting: Press-Pack
Gate current: 200mA
Max. load current: 809A
Max. forward impulse current: 8kA
Load current: 559A
Max. off-state voltage: 1.6kV
Features of semiconductor devices: phase control thyristor (PCT)
Case: BG-T4814K0-1
Kind of package: in-tray
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1+176.55 EUR
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BSB008NE2LXXUMA1 BSB008NE2LXXUMA1 INFINEON TECHNOLOGIES BSB008NE2LX-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 0.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 89W
Drain current: 180A
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
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IPTC020N13NM6ATMA1 INFINEON TECHNOLOGIES Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 135V
Drain current: 297A
Power dissipation: 395W
Case: PG-HDSOP-16
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
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IRFP4768PBF IRFP4768PBF INFINEON TECHNOLOGIES irfp4768pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C3866PVI-021 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: CY8C3866PVI-021
auf Bestellung 407 Stücke:
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30+29.51 EUR
Mindestbestellmenge: 30 Stücke
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BAT2402ELSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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BAT2402LSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Mounting: SMD
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Mounting: THT
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
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IR2118STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IPA040N06NM5SXKSA1 Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa
IPA040N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 288A
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IAUZ40N06S5L050ATMA1 Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of channel: enhancement
Pulsed drain current: 252A
Technology: OptiMOS™ 5
Gate-source voltage: ±16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Pulsed drain current: 241A
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Pulsed drain current: 120A
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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1EDC40I12AHXUMA1 1EDCxxX12AH.pdf
1EDC40I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Produkt ist nicht verfügbar
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1EDC20I12AHXUMA1 1EDCxxX12AH.pdf
1EDC20I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Produkt ist nicht verfügbar
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1EDC60I12AHXUMA1 1EDCxxX12AH.pdf
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 600/650/1200V
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 3.1...17V; 13...35V
auf Bestellung 566 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.92 EUR
25+3.4 EUR
Mindestbestellmenge: 22 Stücke
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.29A; 5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.29A
Power dissipation: 5W
Case: SOT223
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29GL01GT12DHN010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Produkt ist nicht verfügbar
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S29GL01GT12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Produkt ist nicht verfügbar
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S29GL01GT12DHVV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Produkt ist nicht verfügbar
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S29GL512T12DHN010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Produkt ist nicht verfügbar
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S29GL512T12DHN020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; BGA64; parallel
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...125°C
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Produkt ist nicht verfügbar
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IRFR2607ZTRPBF IRFR2607ZTRPBF.pdf
IRFR2607ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BSC030N08NS5ATMA1 BSC030N08NS5-DTE.pdf
BSC030N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPP60R280P6XKSA1 IPP60R280P6-DTE.pdf
IPP60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R280P6FKSA1 IPW60R280P6-DTE.pdf
IPW60R280P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY15B016J-SXA download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Case: SOIC8
Interface: I2C
Kind of memory: FRAM
Produkt ist nicht verfügbar
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CY15B016J-SXAT download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Kind of memory: FRAM
Produkt ist nicht verfügbar
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CY15B016J-SXET download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Clock frequency: 3.4MHz
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Kind of memory: FRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B256J-SXA Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 485 Stücke
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CY15B256J-SXAT Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY15B256J-SXE download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 485 Stücke
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CY15B256J-SXET Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC297TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; Core: 32-bit
Type of integrated circuit: microcontroller
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+92.88 EUR
Mindestbestellmenge: 1000 Stücke
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AIKQ120N60CTXKSA1 AIKQ120N60CT.pdf
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Produkt ist nicht verfügbar
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PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 190mA
Manufacturer series: PV
Relay variant: PhotoMOS
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 2011 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+6.41 EUR
100+5.77 EUR
Mindestbestellmenge: 50 Stücke
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BSB280N15NZ3GXUMA1 BSB280N15NZ3G-DTE.pdf
BSB280N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
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CY7C25652KV18-400BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 400MHz
Memory organisation: 2Mx36bit
Produkt ist nicht verfügbar
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CY7C25652KV18-500BZXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Case: FBGA165
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Memory: 72Mb SRAM
Frequency: 500MHz
Memory organisation: 2Mx36bit
Produkt ist nicht verfügbar
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IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Mounting: SMD
Case: PG-TO252
Pulsed drain current: 30A
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.38Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
IPD60R3K4CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 29W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 3.17Ω
Mounting: SMD
Power dissipation: 29W
Gate charge: 4.6nC
Polarisation: unipolar
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: DPAK; TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSP89H6327XTSA1 BSP89H6327XTSA1.pdf
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT059N15N3ATMA1 IPT059N15N3-DTE.pdf
IPT059N15N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM10H60GAXKMA1 IKCM10H60GA.pdf
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 23.1W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.61 EUR
8+11.79 EUR
10+10.45 EUR
14+10.26 EUR
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IRGP4263DPBF IRGP4263DPBF.pdf
IRGP4263DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Power dissipation: 325W
Collector current: 90A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IRFL4310TRPBF irfl4310pbf.pdf
IRFL4310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 3.7V; 40mA; 120mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 3.7V
Collector current: 40mA
Power dissipation: 0.12W
Case: SOT343
Current gain: 150
Mounting: SMD
Frequency: 60GHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
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IRF7425TRPBF irf7425pbf.pdf irf7425pbf.pdf
IRF7425TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
66+1.3 EUR
88+0.98 EUR
100+0.86 EUR
109+0.79 EUR
Mindestbestellmenge: 66 Stücke
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IRF7240TRPBF irf7240pbf.pdf
IRF7240TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDWD50E120D7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
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IDWD50E65E7XKSA1 Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
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S29JL032J70TFI320 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI320
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29JL064J55TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI000
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29JL032J70TFI420 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI420
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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CY9BF416NPMC-G-JNE2 download
Hersteller: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: CY9BF416NPMC-G-JNE2
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
90+5.7 EUR
Mindestbestellmenge: 90 Stücke
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IMZA65R083M1HXKSA1 Infineon-IMZA65R083M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c878f3c6e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 104W
Case: TO247-4
On-state resistance: 111mΩ
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA65R029CFD7XKSA1 Infineon-IPZA65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730948d81344e8
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 69A
Power dissipation: 305W
Case: TO247-4
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 145nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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T560N16TOFXPSA1 T560N.pdf
T560N16TOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Mounting: Press-Pack
Gate current: 200mA
Max. load current: 809A
Max. forward impulse current: 8kA
Load current: 559A
Max. off-state voltage: 1.6kV
Features of semiconductor devices: phase control thyristor (PCT)
Case: BG-T4814K0-1
Kind of package: in-tray
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+176.55 EUR
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BSB008NE2LXXUMA1 BSB008NE2LX-DTE.pdf
BSB008NE2LXXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 0.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 89W
Drain current: 180A
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPTC020N13NM6ATMA1 Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 135V
Drain current: 297A
Power dissipation: 395W
Case: PG-HDSOP-16
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1800+7.76 EUR
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IRFP4768PBF irfp4768pbf.pdf
IRFP4768PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C3866PVI-021 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C3866PVI-021
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+29.51 EUR
Mindestbestellmenge: 30 Stücke
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BAT2402ELSE6327XTSA1 Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAT2402LSE6327XTSA1 Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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IR2118SPBF description ir2117.pdf
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Mounting: SMD
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.69 EUR
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IR2118PBF ir2117.pdf
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Mounting: THT
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
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IR2118STRPBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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