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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES IPP045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 496 Stücke:
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23+3.84 EUR
34+2.52 EUR
37+2.33 EUR
50+2.11 EUR
100+1.94 EUR
250+1.75 EUR
Mindestbestellmenge: 23 Stücke
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES irf7805zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1 IRF3205ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1854 Stücke:
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66+1.3 EUR
97+0.88 EUR
129+0.65 EUR
500+0.6 EUR
1000+0.54 EUR
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.63 EUR
60+1.43 EUR
66+1.3 EUR
68+1.26 EUR
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES FP15R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+52.99 EUR
3+52.38 EUR
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES FP75R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Type of semiconductor module: IGBT
Power dissipation: 385W
Technology: EconoPIM™ 3
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
auf Bestellung 1 Stücke:
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1+384.42 EUR
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES BFP450H6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Frequency: 24GHz
Technology: SIEGET™
Kind of package: reel; tape
auf Bestellung 663 Stücke:
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122+0.7 EUR
140+0.61 EUR
188+0.45 EUR
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1719 Stücke:
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186+0.46 EUR
272+0.31 EUR
438+0.19 EUR
536+0.15 EUR
638+0.13 EUR
1000+0.11 EUR
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 67mΩ
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -4.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2829 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.94 EUR
169+0.5 EUR
231+0.37 EUR
257+0.33 EUR
500+0.31 EUR
1000+0.3 EUR
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.88 EUR
12+7.37 EUR
14+6.26 EUR
15+5.71 EUR
20+5 EUR
30+4.74 EUR
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.66 EUR
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1260 Stücke:
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34+2.53 EUR
41+2.11 EUR
46+1.86 EUR
64+1.34 EUR
100+1.18 EUR
250+1.01 EUR
500+0.92 EUR
1000+0.89 EUR
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES irf7319pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES irl3103spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES IRFH7084TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DZ1070N22K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 1.07kA
Max. load current: 1.1kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N18K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.6kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES irf2907zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Mounting: THT
Power dissipation: 330W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.33 EUR
22+3.99 EUR
29+2.96 EUR
50+2.65 EUR
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FM25L16B-GTR FM25L16B-GTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 INFINEON TECHNOLOGIES BSC160N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES SMBT3904SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: NPN
Case: SOT363
Frequency: 300MHz
Collector current: 0.2A
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.34 EUR
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CY8CMBR3102-SX1I CY8CMBR3102-SX1I INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
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CY8CMBR3108-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4900 Stücke
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CY8CMBR3108-LQXIT INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY8CMBR3106S-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
490+1.43 EUR
Mindestbestellmenge: 490 Stücke
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IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3410TRLPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES ICE2QS02G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1788 Stücke:
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52+1.67 EUR
61+1.39 EUR
67+1.27 EUR
76+1.12 EUR
77+1.11 EUR
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES irlms5703pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES irlms1503pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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358+0.24 EUR
506+0.17 EUR
767+0.11 EUR
903+0.094 EUR
1137+0.075 EUR
3000+0.064 EUR
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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BC850BWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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BC850CWH6327XTSA1 BC850CWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pvt412.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 123 Stücke:
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PVT412APBF PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
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100+6.77 EUR
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PVT322PBF PVT322PBF INFINEON TECHNOLOGIES pvt322.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
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IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES irfi540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
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61+1.39 EUR
76+1.12 EUR
100+1.07 EUR
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S29AL008J70TFI020 S29AL008J70TFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
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XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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CY3210-MINIPROG1 INFINEON TECHNOLOGIES Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Type of development kit: Cypress
Software: included
Programmers and development kits features: ISP programmer
Associated circuits: PSoC
Interface: USB
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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Interface: I2C; SPI; UART
Communictions protocol: DALI
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Operating temperature: -40...85°C
Number of 10bit A/D converters: 4
Number of 16bit timers: 3
Number of PWM channels: 1
Number of input capture channels: 1
Number of output compare channels: 1
Supply voltage: 2.5...5.5V DC
Memory: 500B SRAM; 4kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
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CY8C5267AXI-LP051 CY8C5267AXI-LP051 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 128kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
auf Bestellung 88 Stücke:
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5+17.06 EUR
10+16.91 EUR
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IRF7343TRPBF IRF7343TRPBF INFINEON TECHNOLOGIES irf7343pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5553 Stücke:
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42+2.06 EUR
64+1.34 EUR
100+0.88 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
4000+0.54 EUR
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IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES IRS20957S.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 528 Stücke:
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25+3.44 EUR
27+3.21 EUR
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IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES irf7316pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1594 Stücke:
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43+2.02 EUR
61+1.4 EUR
87+0.99 EUR
100+0.86 EUR
200+0.76 EUR
250+0.73 EUR
500+0.67 EUR
1000+0.61 EUR
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES BSS83PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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157+0.55 EUR
232+0.37 EUR
341+0.25 EUR
402+0.21 EUR
574+0.14 EUR
1000+0.13 EUR
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
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IRL6372TRPBF IRL6372TRPBF INFINEON TECHNOLOGIES irl6372pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
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100+0.86 EUR
112+0.76 EUR
125+0.68 EUR
154+0.55 EUR
174+0.49 EUR
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CY7C1021DV33-10ZSXI CY7C1021DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
auf Bestellung 856 Stücke:
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34+2.53 EUR
35+2.49 EUR
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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 138 Stücke:
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28+3.13 EUR
36+2.42 EUR
38+2.28 EUR
40+2.13 EUR
50+2.01 EUR
95+1.93 EUR
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IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 12...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 1W
Kind of package: tube
Turn-off time: 150ns
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25+3.45 EUR
29+3 EUR
31+2.81 EUR
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IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 62 Stücke:
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35+2.46 EUR
37+2.31 EUR
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IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 32 Stücke:
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21+4.24 EUR
23+3.75 EUR
25+3.42 EUR
29+3 EUR
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IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4246 Stücke:
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87+0.99 EUR
117+0.74 EUR
186+0.45 EUR
250+0.39 EUR
500+0.35 EUR
1000+0.32 EUR
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IPP045N10N3GXKSA1 IPP045N10N3G-DTE.pdf
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 496 Stücke:
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AnzahlPrivatkunde
23+3.84 EUR
34+2.52 EUR
37+2.33 EUR
50+2.11 EUR
100+1.94 EUR
250+1.75 EUR
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IRF7805ZTRPBF irf7805zpbf.pdf
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1
IRF3205ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1854 Stücke:
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AnzahlPrivatkunde
66+1.3 EUR
97+0.88 EUR
129+0.65 EUR
500+0.6 EUR
1000+0.54 EUR
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IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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53+1.63 EUR
60+1.43 EUR
66+1.3 EUR
68+1.26 EUR
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FP15R12W1T4_B3 FP15R12W1T4B3.pdf
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 20 Stücke:
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2+52.99 EUR
3+52.38 EUR
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FP75R12KT4 FP75R12KT4.pdf
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Type of semiconductor module: IGBT
Power dissipation: 385W
Technology: EconoPIM™ 3
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
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1+384.42 EUR
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BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BFP450H6327 BFP450H6327-dte.pdf
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Frequency: 24GHz
Technology: SIEGET™
Kind of package: reel; tape
auf Bestellung 663 Stücke:
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122+0.7 EUR
140+0.61 EUR
188+0.45 EUR
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BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1719 Stücke:
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186+0.46 EUR
272+0.31 EUR
438+0.19 EUR
536+0.15 EUR
638+0.13 EUR
1000+0.11 EUR
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 67mΩ
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -4.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2829 Stücke:
Lieferzeit 14-21 Tag (e)
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91+0.94 EUR
169+0.5 EUR
231+0.37 EUR
257+0.33 EUR
500+0.31 EUR
1000+0.3 EUR
Mindestbestellmenge: 91 Stücke
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IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 62 Stücke:
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11+7.88 EUR
12+7.37 EUR
14+6.26 EUR
15+5.71 EUR
20+5 EUR
30+4.74 EUR
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IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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15+5.66 EUR
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IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.53 EUR
41+2.11 EUR
46+1.86 EUR
64+1.34 EUR
100+1.18 EUR
250+1.01 EUR
500+0.92 EUR
1000+0.89 EUR
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IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRF7319TRPBF description irf7319pbf.pdf
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRL3103STRLPBF irl3103spbf.pdf
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF.pdf
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRFS3206TRRPBF irfs3206pbf.pdf
IRFS3206TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DZ1070N22K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 1.07kA
Max. load current: 1.1kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N18K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.6kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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IRF2907ZPBF irf2907zpbf.pdf
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Mounting: THT
Power dissipation: 330W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.33 EUR
22+3.99 EUR
29+2.96 EUR
50+2.65 EUR
Mindestbestellmenge: 16 Stücke
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FM25L16B-GTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSC160N10NS3GATMA1 BSC160N10NS3G-DTE.pdf
BSC160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SMBT3904SH6327XTSA1 SMBT3904SH6327.pdf
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: NPN
Case: SOT363
Frequency: 300MHz
Collector current: 0.2A
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
63+1.34 EUR
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CY8CMBR3102-SX1I Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3102-SX1I
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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CY8CMBR3108-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8CMBR3106S-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
490+1.43 EUR
Mindestbestellmenge: 490 Stücke
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IRFR3410TRPBF description irfr3410pbf.pdf
IRFR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRFR3410TRLPBF irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02G.pdf
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.67 EUR
61+1.39 EUR
67+1.27 EUR
76+1.12 EUR
77+1.11 EUR
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IRLMS5703TRPBF irlms5703pbf.pdf
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRLMS1503TRPBF description irlms1503pbf.pdf
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC850BE6327 BC850BE6327.pdf
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7507 Stücke:
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358+0.24 EUR
506+0.17 EUR
767+0.11 EUR
903+0.094 EUR
1137+0.075 EUR
3000+0.064 EUR
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BC850CE6327 BC850BE6327.pdf
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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148+0.58 EUR
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BC850BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC850CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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PVT412LSPBF pvt412.pdf
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
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12+7.71 EUR
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
PVT412APBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
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50+7.52 EUR
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PVT322PBF pvt322.pdf
PVT322PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRFI540NPBF irfi540n.pdf
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 205 Stücke:
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37+2.33 EUR
61+1.39 EUR
76+1.12 EUR
100+1.07 EUR
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S29AL008J70TFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 514 Stücke:
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21+4.15 EUR
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XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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CY3210-MINIPROG1 Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Type of development kit: Cypress
Software: included
Programmers and development kits features: ISP programmer
Associated circuits: PSoC
Interface: USB
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Interface: I2C; SPI; UART
Communictions protocol: DALI
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Operating temperature: -40...85°C
Number of 10bit A/D converters: 4
Number of 16bit timers: 3
Number of PWM channels: 1
Number of input capture channels: 1
Number of output compare channels: 1
Supply voltage: 2.5...5.5V DC
Memory: 500B SRAM; 4kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
auf Bestellung 167 Stücke:
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49+1.75 EUR
52+1.67 EUR
55+1.57 EUR
100+1.42 EUR
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CY8C5267AXI-LP051 download
CY8C5267AXI-LP051
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 128kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
auf Bestellung 88 Stücke:
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5+17.06 EUR
10+16.91 EUR
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IRF7343TRPBF description irf7343pbf.pdf
IRF7343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5553 Stücke:
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42+2.06 EUR
64+1.34 EUR
100+0.88 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
4000+0.54 EUR
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IRS20957STRPBF IRS20957S.pdf
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 528 Stücke:
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25+3.44 EUR
27+3.21 EUR
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IRF7316TRPBF description irf7316pbf.pdf
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1594 Stücke:
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43+2.02 EUR
61+1.4 EUR
87+0.99 EUR
100+0.86 EUR
200+0.76 EUR
250+0.73 EUR
500+0.67 EUR
1000+0.61 EUR
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BSS83PH6327XTSA1 BSS83PH6327XTSA1-dte.pdf
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9925 Stücke:
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157+0.55 EUR
232+0.37 EUR
341+0.25 EUR
402+0.21 EUR
574+0.14 EUR
1000+0.13 EUR
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
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IRL6372TRPBF irl6372pbf.pdf
IRL6372TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
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100+0.86 EUR
112+0.76 EUR
125+0.68 EUR
154+0.55 EUR
174+0.49 EUR
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CY7C1021DV33-10ZSXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021DV33-10ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
auf Bestellung 856 Stücke:
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34+2.53 EUR
35+2.49 EUR
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IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 138 Stücke:
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28+3.13 EUR
36+2.42 EUR
38+2.28 EUR
40+2.13 EUR
50+2.01 EUR
95+1.93 EUR
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IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 12...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 51 Stücke:
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23+3.8 EUR
25+3.45 EUR
29+3 EUR
31+2.81 EUR
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IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 62 Stücke:
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35+2.46 EUR
37+2.31 EUR
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IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 32 Stücke:
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21+4.24 EUR
23+3.75 EUR
25+3.42 EUR
29+3 EUR
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IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4246 Stücke:
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87+0.99 EUR
117+0.74 EUR
186+0.45 EUR
250+0.39 EUR
500+0.35 EUR
1000+0.32 EUR
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