Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124750) > Seite 2033 nach 2080

Wählen Sie Seite:   [  << Vorherige Seite ]  1 208 416 624 832 1040 1248 1456 1664 1872 2028 2029 2030 2031 2032 2033 2034 2035 2036 2037 2038 2080  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES irfi540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
37+2.33 EUR
61+1.39 EUR
76+1.12 EUR
100+1.07 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI020 S29AL008J70TFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
21+4.15 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY3210-MINIPROG1 INFINEON TECHNOLOGIES Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Type of development kit: Cypress
Software: included
Programmers and development kits features: ISP programmer
Associated circuits: PSoC
Interface: USB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Interface: I2C; SPI; UART
Communictions protocol: DALI
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Operating temperature: -40...85°C
Number of 10bit A/D converters: 4
Number of 16bit timers: 3
Number of PWM channels: 1
Number of input capture channels: 1
Number of output compare channels: 1
Supply voltage: 2.5...5.5V DC
Memory: 500B SRAM; 4kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.75 EUR
52+1.67 EUR
55+1.57 EUR
100+1.42 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5267AXI-LP051 CY8C5267AXI-LP051 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 128kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.06 EUR
10+16.91 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7343TRPBF IRF7343TRPBF INFINEON TECHNOLOGIES irf7343pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5553 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.06 EUR
64+1.34 EUR
100+0.88 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
4000+0.54 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES IRS20957S.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.44 EUR
27+3.21 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES irf7316pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1594 Stücke:
Lieferzeit 14-21 Tag (e)
43+2.02 EUR
61+1.4 EUR
87+0.99 EUR
100+0.86 EUR
200+0.76 EUR
250+0.73 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 43 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES BSS83PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9925 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.55 EUR
232+0.37 EUR
341+0.25 EUR
402+0.21 EUR
574+0.14 EUR
1000+0.13 EUR
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
Mindestbestellmenge: 157 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL6372TRPBF IRL6372TRPBF INFINEON TECHNOLOGIES irl6372pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.86 EUR
112+0.76 EUR
125+0.68 EUR
154+0.55 EUR
174+0.49 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10ZSXI CY7C1021DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
auf Bestellung 856 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.53 EUR
35+2.49 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
28+3.13 EUR
36+2.42 EUR
38+2.28 EUR
40+2.13 EUR
50+2.01 EUR
95+1.93 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 12...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.8 EUR
25+3.45 EUR
29+3 EUR
31+2.81 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.46 EUR
37+2.31 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
21+4.24 EUR
23+3.75 EUR
25+3.42 EUR
29+3 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4246 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.99 EUR
117+0.74 EUR
186+0.45 EUR
250+0.39 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 87 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 12...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
28+3.13 EUR
33+2.65 EUR
35+2.46 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2905ZTRPBF IRFR2905ZTRPBF INFINEON TECHNOLOGIES IRFx2905ZPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4127PBF IRFB4127PBF INFINEON TECHNOLOGIES irfb4127pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7324TRPBF IRF7324TRPBF INFINEON TECHNOLOGIES irf7324pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6327HTSA1 BAV199E6327HTSA1 INFINEON TECHNOLOGIES BAV199E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES BFP760.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Frequency: 45GHz
Technology: SiGe:C
Kind of package: reel; tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES irfb4227pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.5 EUR
38+2.28 EUR
42+2.06 EUR
50+1.81 EUR
100+1.57 EUR
250+1.31 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBFXKMA1 IRFB4227PBFXKMA1 INFINEON TECHNOLOGIES irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.33 EUR
41+2.09 EUR
47+1.82 EUR
52+1.65 EUR
100+1.5 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES irf7424pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Operating voltage: 11...18V DC
Topology: push-pull
Mounting: SMD
Output current: 6mA
Type of integrated circuit: PMIC
Operating temperature: -25...125°C
Application: SMPS
Case: PG-DSO-20
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.27 EUR
30+2.84 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES SPP11N80C3-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.28 EUR
35+2.43 EUR
50+2.13 EUR
100+1.99 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBF IRFP3006PBF INFINEON TECHNOLOGIES IRFP3006PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES BTS50085-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS441RG BTS441RG INFINEON TECHNOLOGIES BTS441RG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.78 EUR
17+5.11 EUR
25+4.58 EUR
100+4.34 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS6133D BTS6133D INFINEON TECHNOLOGIES BTS6133D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Supply voltage: 5.5...38V DC
Output current: 33A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 8mΩ
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.93 EUR
26+3.36 EUR
29+3.03 EUR
32+2.74 EUR
40+2.62 EUR
50+2.57 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP752R BSP752R INFINEON TECHNOLOGIES BSP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Output current: 1.3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Output voltage: 52V
Case: SO8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
37+2.33 EUR
50+1.74 EUR
53+1.62 EUR
55+1.57 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS4300SGA BTS4300SGA INFINEON TECHNOLOGIES BTS4300SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.17 EUR
42+2.06 EUR
48+1.81 EUR
100+1.48 EUR
250+1.31 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.89 EUR
85+1 EUR
87+0.99 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
43+2.01 EUR
66+1.3 EUR
75+1.14 EUR
Mindestbestellmenge: 43 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES IPN70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES IPS70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES BSP129H6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 50mA
Kind of channel: depletion
Drain-source voltage: 240V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 6.5Ω
Mounting: SMD
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
74+1.15 EUR
101+0.84 EUR
137+0.62 EUR
156+0.55 EUR
161+0.54 EUR
Mindestbestellmenge: 74 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -0.39A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
271+0.31 EUR
477+0.18 EUR
582+0.14 EUR
667+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 41mΩ
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.19 EUR
115+0.75 EUR
168+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.37 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES SPD50P03LGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
On-state resistance: 7mΩ
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.45 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 43mΩ
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -5.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.26 EUR
109+0.79 EUR
164+0.52 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 68 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.39 EUR
228+0.37 EUR
Mindestbestellmenge: 218 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD122N10N3GATMA1 IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2184 Stücke:
Lieferzeit 14-21 Tag (e)
37+2.31 EUR
46+1.89 EUR
54+1.58 EUR
60+1.43 EUR
66+1.3 EUR
74+1.15 EUR
100+1.06 EUR
500+0.89 EUR
1000+0.86 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF40R207 IRF40R207 INFINEON TECHNOLOGIES IRF40R207.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.55 EUR
68+1.26 EUR
79+1.09 EUR
96+0.88 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004Q-SXE CY15B004Q-SXE INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Clock frequency: 16MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS03GXUMA1 ICE3PCS03GXUMA1 INFINEON TECHNOLOGIES ICE3PCS03G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01G ICE3PCS01G INFINEON TECHNOLOGIES ICE3PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.74 EUR
28+3.15 EUR
100+2.5 EUR
250+2.23 EUR
500+2.05 EUR
1000+1.94 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLR120NTRPBF IRLR120NTRPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7270 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.58 EUR
87+0.99 EUR
118+0.73 EUR
500+0.56 EUR
1000+0.49 EUR
2000+0.43 EUR
4000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 54 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC849BE6327HTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
18000+0.04 EUR
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB025N10N3GATMA1 IPB025N10N3GATMA1 INFINEON TECHNOLOGIES IPB025N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.87 EUR
13+7.04 EUR
15+5.81 EUR
100+5.02 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB025N08N3GATMA1 IPB025N08N3GATMA1 INFINEON TECHNOLOGIES IPB025N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.94 EUR
23+3.71 EUR
100+2.98 EUR
250+2.73 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES BAS125-0xW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Max. forward voltage: 0.95V
Power dissipation: 0.25W
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.5A
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.89 EUR
Mindestbestellmenge: 45 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
auf Bestellung 4399 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.29 EUR
363+0.24 EUR
435+0.19 EUR
556+0.15 EUR
589+0.14 EUR
Mindestbestellmenge: 295 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFI540NPBF irfi540n.pdf
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
37+2.33 EUR
61+1.39 EUR
76+1.12 EUR
100+1.07 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.15 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY3210-MINIPROG1 Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Type of development kit: Cypress
Software: included
Programmers and development kits features: ISP programmer
Associated circuits: PSoC
Interface: USB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Interface: I2C; SPI; UART
Communictions protocol: DALI
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Operating temperature: -40...85°C
Number of 10bit A/D converters: 4
Number of 16bit timers: 3
Number of PWM channels: 1
Number of input capture channels: 1
Number of output compare channels: 1
Supply voltage: 2.5...5.5V DC
Memory: 500B SRAM; 4kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
49+1.75 EUR
52+1.67 EUR
55+1.57 EUR
100+1.42 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5267AXI-LP051 download
CY8C5267AXI-LP051
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 128kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.06 EUR
10+16.91 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7343TRPBF description irf7343pbf.pdf
IRF7343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5553 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.06 EUR
64+1.34 EUR
100+0.88 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
4000+0.54 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF IRS20957S.pdf
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.44 EUR
27+3.21 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF description irf7316pbf.pdf
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1594 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
43+2.02 EUR
61+1.4 EUR
87+0.99 EUR
100+0.86 EUR
200+0.76 EUR
250+0.73 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 43 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS83PH6327XTSA1 BSS83PH6327XTSA1-dte.pdf
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9925 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
157+0.55 EUR
232+0.37 EUR
341+0.25 EUR
402+0.21 EUR
574+0.14 EUR
1000+0.13 EUR
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
Mindestbestellmenge: 157 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL6372TRPBF irl6372pbf.pdf
IRL6372TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
112+0.76 EUR
125+0.68 EUR
154+0.55 EUR
174+0.49 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10ZSXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021DV33-10ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
auf Bestellung 856 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.53 EUR
35+2.49 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.13 EUR
36+2.42 EUR
38+2.28 EUR
40+2.13 EUR
50+2.01 EUR
95+1.93 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 12...20V DC
Output current: -420...200mA
Turn-on time: 0.2µs
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.8 EUR
25+3.45 EUR
29+3 EUR
31+2.81 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 625mW
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.46 EUR
37+2.31 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 9...20V DC
Output current: -420...200mA
Turn-on time: 150ns
Power: 1W
Kind of package: tube
Turn-off time: 150ns
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.24 EUR
23+3.75 EUR
25+3.42 EUR
29+3 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4246 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
87+0.99 EUR
117+0.74 EUR
186+0.45 EUR
250+0.39 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 87 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR2128SPBF IR21271SPBF.pdf
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 12...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.13 EUR
33+2.65 EUR
35+2.46 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2905ZTRPBF IRFx2905ZPBF.pdf
IRFR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4127PBF irfb4127pbf.pdf
IRFB4127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7324TRPBF irf7324pbf.pdf
IRF7324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6327HTSA1 BAV199E6327.pdf
BAV199E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP760H6327XTSA1 BFP760.pdf
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Frequency: 45GHz
Technology: SiGe:C
Kind of package: reel; tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBF irfb4227pbf.pdf
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.5 EUR
38+2.28 EUR
42+2.06 EUR
50+1.81 EUR
100+1.57 EUR
250+1.31 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBFXKMA1 irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.33 EUR
41+2.09 EUR
47+1.82 EUR
52+1.65 EUR
100+1.5 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF irf7424pbf.pdf
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ICE2HS01GXUMA1 ICE2HS01G.pdf
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Operating voltage: 11...18V DC
Topology: push-pull
Mounting: SMD
Output current: 6mA
Type of integrated circuit: PMIC
Operating temperature: -25...125°C
Application: SMPS
Case: PG-DSO-20
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.27 EUR
30+2.84 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 SPP11N80C3-dte.pdf
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.28 EUR
35+2.43 EUR
50+2.13 EUR
100+1.99 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBF IRFP3006PBF.pdf
IRFP3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS50085-1TMA BTS50085-1TMA.pdf
BTS50085-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS441RG BTS441RG.pdf
BTS441RG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.78 EUR
17+5.11 EUR
25+4.58 EUR
100+4.34 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS6133D BTS6133D.pdf
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Supply voltage: 5.5...38V DC
Output current: 33A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 8mΩ
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.93 EUR
26+3.36 EUR
29+3.03 EUR
32+2.74 EUR
40+2.62 EUR
50+2.57 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP752R BSP752R.pdf
BSP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Output current: 1.3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Output voltage: 52V
Case: SO8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
37+2.33 EUR
50+1.74 EUR
53+1.62 EUR
55+1.57 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS4300SGA BTS4300SGA.pdf
BTS4300SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.17 EUR
42+2.06 EUR
48+1.81 EUR
100+1.48 EUR
250+1.31 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.89 EUR
85+1 EUR
87+0.99 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SXKSA1 IPAN70R360P7S.pdf
IPAN70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
43+2.01 EUR
66+1.3 EUR
75+1.14 EUR
Mindestbestellmenge: 43 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R360P7SATMA1 IPN70R360P7S.pdf
IPN70R360P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPS70R360P7SAKMA1 IPS70R360P7S.pdf
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP129H6327XTSA1 BSP129H6327-DTE.pdf
BSP129H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 50mA
Kind of channel: depletion
Drain-source voltage: 240V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 6.5Ω
Mounting: SMD
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
101+0.84 EUR
137+0.62 EUR
156+0.55 EUR
161+0.54 EUR
Mindestbestellmenge: 74 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -0.39A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
271+0.31 EUR
477+0.18 EUR
582+0.14 EUR
667+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
BSL207SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 41mΩ
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
115+0.75 EUR
168+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.37 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD50P03LGBTMA1 SPD50P03LGBTMA1-DTE.pdf
SPD50P03LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
On-state resistance: 7mΩ
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.45 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 43mΩ
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -5.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
68+1.26 EUR
109+0.79 EUR
164+0.52 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 68 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
218+0.39 EUR
228+0.37 EUR
Mindestbestellmenge: 218 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
IPD122N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2184 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
37+2.31 EUR
46+1.89 EUR
54+1.58 EUR
60+1.43 EUR
66+1.3 EUR
74+1.15 EUR
100+1.06 EUR
500+0.89 EUR
1000+0.86 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF40R207 IRF40R207.pdf
IRF40R207
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.55 EUR
68+1.26 EUR
79+1.09 EUR
96+0.88 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004Q-SXE CY15B004Q_RevC_6-4-19.pdf
CY15B004Q-SXE
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Clock frequency: 16MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS03GXUMA1 ICE3PCS03G.pdf
ICE3PCS03GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01G ICE3PCS01G.pdf
ICE3PCS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.74 EUR
28+3.15 EUR
100+2.5 EUR
250+2.23 EUR
500+2.05 EUR
1000+1.94 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9120NTRLPBF irfr9120npbf.pdf
IRFR9120NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLR120NTRPBF description irlr120npbf.pdf
IRLR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7270 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
54+1.58 EUR
87+0.99 EUR
118+0.73 EUR
500+0.56 EUR
1000+0.49 EUR
2000+0.43 EUR
4000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 54 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148EV30LL-45BVXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148EV30LL-45ZSXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC849BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18000+0.04 EUR
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB025N10N3GATMA1 IPB025N10N3G-DTE.pdf
IPB025N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.87 EUR
13+7.04 EUR
15+5.81 EUR
100+5.02 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB025N08N3GATMA1 IPB025N08N3G-DTE.pdf
IPB025N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.94 EUR
23+3.71 EUR
100+2.98 EUR
250+2.73 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 BAS125-0xW.pdf
BAS12504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Max. forward voltage: 0.95V
Power dissipation: 0.25W
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.5A
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
45+1.89 EUR
Mindestbestellmenge: 45 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR6405WH6327XTSA1 BAR64xx_Ser.pdf
BAR6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
auf Bestellung 4399 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
363+0.24 EUR
435+0.19 EUR
556+0.15 EUR
589+0.14 EUR
Mindestbestellmenge: 295 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 208 416 624 832 1040 1248 1456 1664 1872 2028 2029 2030 2031 2032 2033 2034 2035 2036 2037 2038 2080  [ Nächste Seite >> ]