Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (135284) > Seite 2234 nach 2255
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IPP093N06N3GXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| DD340N18S | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 330A Case: BG-PB50SB-1 Max. forward voltage: 1.31V Max. forward impulse current: 10kA Electrical mounting: screw Mechanical mounting: screw |
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 4643 Stücke: Lieferzeit 14-21 Tag (e) |
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AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 33ns Turn-off time: 184ns |
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7946TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Power dissipation: 96W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IRFR825TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 119W Case: DPAK Mounting: SMD Kind of channel: enhanced |
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IRF7580MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 116A Power dissipation: 115W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Number of channels: 2 Mounting: SMD Case: TSNP6 Supply voltage: 1.8...3.5V DC Output configuration: SPDT Bandwidth: 0.1...6GHz Application: telecommunication |
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TLE4207GXUMA2 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Case: PG-DSO-14 Output current: 0.8A Number of channels: 2 Integrated circuit features: fault detection Mounting: SMD Operating temperature: -40...150°C Operating voltage: 8...18V Kind of package: reel; tape |
auf Bestellung 2466 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE42502GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 2.5...36V Output current: 50mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 4...40V |
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TLE42642GHTSA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 5V Output current: 0.15A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Input voltage: 5.5...45V |
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| TLE4264GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4 Operating temperature: -40...150°C Output voltage: 5V Output current: 0.16A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 5.5...45V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: PG-SOT223-4 Tolerance: ±2% |
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TLE4266GHTMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.15A Case: PG-SOT223-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5.5...45V |
auf Bestellung 4185 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE4268GXUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD Kind of package: reel; tape Case: PG-DSO-20 Output voltage: 5V Output current: 0.15A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 5.5...45V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...150°C |
auf Bestellung 419 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE4269GXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...45V |
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TLE4291EXUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.45A Case: PG-SSOP-14-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 3.3...42V |
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TLE42962GV33HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 3.3V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 4...45V |
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TLE42962GV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 5.5...45V |
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TLE4296GV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 30mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±4% Input voltage: 5.5...45V |
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TLE42994EXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD Kind of package: reel; tape Input voltage: 4.4...45V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...150°C Case: PG-SSOP-14-EP Output voltage: 3.3V Output current: 0.15A Type of integrated circuit: voltage regulator |
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TLE7257SJXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Interface: LIN Supply voltage: 5.5...18V DC Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Case: PG-DSO-8 DC supply current: 3mA Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver |
Produkt ist nicht verfügbar |
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TLE7258DXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8 Type of integrated circuit: interface Interface: LIN Supply voltage: 5.5...18V DC Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Case: PG-TSON-8 DC supply current: 3mA Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver |
Produkt ist nicht verfügbar |
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| TLE7268LCXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14 Operating temperature: -40...150°C Type of integrated circuit: interface Interface: LIN Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver Mounting: SMD Case: PG-TSON-14 Supply voltage: 5.5...40V DC |
Produkt ist nicht verfügbar |
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TLE7268SKXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14 Operating temperature: -40...150°C Type of integrated circuit: interface Interface: LIN Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-14 Supply voltage: 5.5...40V DC |
Produkt ist nicht verfügbar |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Case: AG-EASY1B-1 Max. off-state voltage: 1.2kV Collector current: 6A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Pulsed collector current: 12A Power dissipation: 94W |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR7807ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 40W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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| BSM25GD120DN2E3224BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 25A Power dissipation: 200W Case: ECONOPACK 2K Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Application: Inverter Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge Mechanical mounting: screw Type of module: IGBT |
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AIKB20N60CTATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
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| IKQ120N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: PG-TO247-3-46 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 703nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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AIKQ120N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
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IRFR3910TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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DD261N20K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V Max. off-state voltage: 2kV Max. forward voltage: 1.42V Load current: 261A Semiconductor structure: double series Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB50-1 |
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TT122N22KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw Type of module: thyristor Max. off-state voltage: 2.2kV Max. forward voltage: 1.95V Load current: 122A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 3.3kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: BG-PB34-1 |
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IRFR3504ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 220A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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IPP50R190CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 18.5A Power dissipation: 127W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR15N20DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK Mounting: SMD Case: DPAK Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Type of transistor: N-MOSFET Power dissipation: 140W Kind of package: reel Technology: HEXFET® Kind of channel: enhanced |
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BSC360N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 150V Drain current: 33A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ520N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 150V Drain current: 21A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ900N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 13A Power dissipation: 38W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 4060 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB048N15N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO 263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced |
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IPB048N15N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced |
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IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 214W Polarisation: unipolar Gate charge: 49nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 81A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IPB083N15N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 179W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 66A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IPB108N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3 Technology: OptiMOS™ 3 Case: PG-TO263-3 Mounting: SMD On-state resistance: 10.8mΩ Power dissipation: 214W Drain-source voltage: 150V Drain current: 83A Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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IPB530N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 53mΩ Power dissipation: 68W Polarisation: unipolar Drain current: 21A Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPI075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPI111N15N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPI530N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3 Case: PG-TO262-3 Mounting: THT Technology: OptiMOS™ 3 Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 53mΩ Power dissipation: 68W Polarisation: unipolar Drain current: 21A Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IPP051N15N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP076N15N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 79A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP111N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3 Mounting: THT Drain-source voltage: 150V Drain current: 83A On-state resistance: 11.1mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP530N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3 On-state resistance: 53mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: PG-TO220-3 Drain-source voltage: 150V Drain current: 21A |
Produkt ist nicht verfügbar |
| IPP093N06N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DD340N18S |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| BSC340N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4643 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 99+ | 0.73 EUR |
| 162+ | 0.44 EUR |
| 195+ | 0.37 EUR |
| 206+ | 0.35 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.33 EUR |
| AIGW50N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
Produkt ist nicht verfügbar
| IRFR3410TRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7946TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR825TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7580MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFH7084TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BGS12SN6E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Output configuration: SPDT
Bandwidth: 0.1...6GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Output configuration: SPDT
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
| TLE4207GXUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.69 EUR |
| 30+ | 2.4 EUR |
| 34+ | 2.12 EUR |
| 36+ | 2 EUR |
| TLE42502GHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
Produkt ist nicht verfügbar
| TLE42642GHTSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
| TLE4264GHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.16A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-SOT223-4
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.16A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-SOT223-4
Tolerance: ±2%
Produkt ist nicht verfügbar
| TLE4266GHTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 4185 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.27 EUR |
| 36+ | 2.02 EUR |
| 43+ | 1.69 EUR |
| 45+ | 1.6 EUR |
| 500+ | 1.54 EUR |
| 4000+ | 1.53 EUR |
| TLE4268GXUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Case: PG-DSO-20
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Case: PG-DSO-20
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.13 EUR |
| 38+ | 1.93 EUR |
| 43+ | 1.7 EUR |
| 45+ | 1.62 EUR |
| 250+ | 1.54 EUR |
| TLE4269GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
| TLE4291EXUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Produkt ist nicht verfügbar
| TLE42962GV33HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
Produkt ist nicht verfügbar
| TLE42962GV50HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
| TLE4296GV50HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
| TLE42994EXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
| TLE7257SJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
| TLE7258DXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-TSON-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-TSON-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
| TLE7268LCXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Supply voltage: 5.5...40V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Supply voltage: 5.5...40V DC
Produkt ist nicht verfügbar
| TLE7268SKXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Produkt ist nicht verfügbar
| AIKP20N60CTAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.29 EUR |
| 16+ | 4.68 EUR |
| 18+ | 3.99 EUR |
| 19+ | 3.78 EUR |
| 250+ | 3.69 EUR |
| FP06R12W1T4B3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Collector current: 6A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Power dissipation: 94W
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Collector current: 6A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Power dissipation: 94W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 44.62 EUR |
| IRLR7807ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| BSM25GD120DN2E3224BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| AIKB20N60CTATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKQ120N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKQ120N60TAXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| AIKQ120N60CTXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IRFR3910TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP037N08N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 3.35 EUR |
| 24+ | 3 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.17 EUR |
| DD261N20K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
Produkt ist nicht verfügbar
| TT122N22KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.95V
Load current: 122A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 3.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB34-1
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.95V
Load current: 122A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 3.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB34-1
Produkt ist nicht verfügbar
| IRFR3504ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP80R360P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.58 EUR |
| IRF3805PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP50R190CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.57 EUR |
| 32+ | 2.3 EUR |
| 41+ | 1.77 EUR |
| 43+ | 1.67 EUR |
| IRFR15N20DTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC360N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 150V
Drain current: 33A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 150V
Drain current: 33A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| BSZ520N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| BSZ900N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4060 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.15 EUR |
| 76+ | 0.95 EUR |
| 105+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| IPA075N15N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.25 EUR |
| 11+ | 7.12 EUR |
| 14+ | 5.22 EUR |
| 15+ | 4.93 EUR |
| IPB048N15N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO 263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO 263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB048N15N5LF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB073N15N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 49nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 81A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 49nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 81A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPB083N15N5LF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 66A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 66A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPB108N15N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Technology: OptiMOS™ 3
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 10.8mΩ
Power dissipation: 214W
Drain-source voltage: 150V
Drain current: 83A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Technology: OptiMOS™ 3
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 10.8mΩ
Power dissipation: 214W
Drain-source voltage: 150V
Drain current: 83A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPB530N15N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPI075N15N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPI111N15N3GAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPI530N15N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP051N15N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP076N15N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP111N15N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Mounting: THT
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Mounting: THT
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.15 EUR |
| 16+ | 4.63 EUR |
| 17+ | 4.22 EUR |
| 50+ | 4.06 EUR |
| IPP530N15N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 21A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 21A
Produkt ist nicht verfügbar