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IPF129N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF21940CFF3A0DF&compId=IPF129N20NM6ATMA1.pdf?ci_sign=5a3152a240c0ea7d65acde0ee8511386ec270159 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
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IPT129N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF25A7E7B8C80DF&compId=IPT129N20NM6ATMA1.pdf?ci_sign=30d35994a57117cdc9873c22186519f3c8963974 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
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IPT067N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF24A02318A40DF&compId=IPT067N20NM6ATMA1.pdf?ci_sign=fbaa8df17ce3a6283c04eb395687a5f77eaea2a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 548A
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IPF067N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF213CA379F60DF&compId=IPF067N20NM6ATMA1.pdf?ci_sign=f31c161fc43780799b4d4a3452fcf50711faf093 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 138A; Idm: 552A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 138A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 72nC
Pulsed drain current: 552A
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ISC130N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 352A
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ISC151N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF26935A115E0DF&compId=ISC151N20NM6ATMA1.pdf?ci_sign=2853389a1873421ef7b23eddc1cdd8f08a6cf58f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 74A; Idm: 296A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 200W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 15.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 31nC
Pulsed drain current: 296A
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IPP095N20NM6AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2349188A240DF&compId=IPP095N20NM6AKSA1.pdf?ci_sign=c39c87967d4d89be8e059b3a1a08a71b22ad7dae Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 116A; Idm: 464A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 116A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 464A
Produkt ist nicht verfügbar
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BCW67CE6327 BCW67CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52D8FFE996469&compId=BCW67B.pdf?ci_sign=bdbfe8f0672e4b7d88af7d57146c2b876a179314 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
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IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E29801E7FF4749&compId=IPP60R060P7.pdf?ci_sign=e1878468754d31d06f5fea24df11181436da83af Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
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IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Mounting: SMD
Collector-emitter voltage: 45V
Case: SC74
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 1W
Frequency: 170MHz
Polarisation: bipolar
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S25FL064LABMFA010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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BSZ340N08NS3GATMA1 BSZ340N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4EB1EB22211C&compId=BSZ340N08NS3G-DTE.pdf?ci_sign=fcb9737eb5449cce02db625a02d11085b0a60560 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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2ED300C17SROHSBPSA1 INFINEON TECHNOLOGIES 2ED300C17S.pdf Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Technology: EiceDRIVER™; SiC
Mounting: PCB
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Type of semiconductor module: gate driver board
Kind of output: IGBT driver
Topology: IGBT half-bridge
Operating temperature: -25...85°C
Supply voltage: 14...16V DC
Output current: 30A
Frequency: 60kHz
Voltage class: 1.7kV
Case: AG-EICE
Application: for medium and high power application
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
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BGX50AE6327 BGX50AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; 6ns; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Features of semiconductor devices: fast switching
Semiconductor structure: bridge rectifier
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Reverse recovery time: 6ns
Power dissipation: 0.21W
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463+0.15 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 463
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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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48+1.5 EUR
50+1.44 EUR
54+1.33 EUR
150+1.29 EUR
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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101+0.71 EUR
114+0.63 EUR
125+0.57 EUR
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
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PVG612PBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 970 Stücke:
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50+7.11 EUR
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IRF7465TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES irf7465pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
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BSP315PH6327XTSA1 BSP315PH6327XTSA1 INFINEON TECHNOLOGIES BSP315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
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84+0.86 EUR
131+0.55 EUR
164+0.44 EUR
182+0.39 EUR
205+0.35 EUR
500+0.29 EUR
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IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Power dissipation: 89W
Drain-source voltage: 150V
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IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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PVT312LSPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: SMT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Max. operating current: 0.17A
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 857 Stücke:
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50+5.38 EUR
100+4.83 EUR
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PVT312PBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Max. operating current: 320mA
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
auf Bestellung 244 Stücke:
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50+5.38 EUR
100+4.83 EUR
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PVT312SPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
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IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 117 Stücke:
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36+2 EUR
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IRFB4228PBF IRFB4228PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B73DF1A6F5005056AB5A8F&compId=irfb4228pbf.pdf?ci_sign=c76c55ba351c4f18b4679077e4b312a62afa7c33 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
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23+3.15 EUR
32+2.26 EUR
50+2.1 EUR
100+2.04 EUR
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES IDP15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 100A; TO220-2; 47ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 47ns
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
51+1.42 EUR
77+0.93 EUR
100+0.9 EUR
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES IDP15E65D1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 120A; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: fast switching
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BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Application: telecommunication
Case: TSLP-6-4
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
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BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 1511 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
715+0.1 EUR
770+0.093 EUR
893+0.08 EUR
966+0.074 EUR
1177+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 625
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
auf Bestellung 776 Stücke:
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35+2.06 EUR
64+1.13 EUR
66+1.09 EUR
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IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES IRFB7734PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR420U BCR420U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 95 Stücke:
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95+0.76 EUR
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BCR421UE6327 BCR421UE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
169+0.42 EUR
196+0.37 EUR
209+0.34 EUR
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BCR420UE6327HTSA1 BCR420UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
190+0.38 EUR
214+0.33 EUR
249+0.29 EUR
271+0.26 EUR
Mindestbestellmenge: 157
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
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BTS5210L BTS5210L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 536 Stücke:
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15+4.99 EUR
22+3.33 EUR
100+2.73 EUR
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 603 Stücke:
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25+2.92 EUR
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1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
28+2.56 EUR
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
44+1.64 EUR
51+1.42 EUR
100+1.32 EUR
250+1.27 EUR
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7452TRPBF IRF7452TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7451PBF IRF7451PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7451TRPBF IRF7451TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7455TRPBF IRF7455TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7457TRPBF IRF7457TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLD1314ELXUMA1 TLD1314ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.31 EUR
Mindestbestellmenge: 10
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 40A
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
On-state resistance: 16mΩ
Power dissipation: 63W
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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IPF129N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF21940CFF3A0DF&compId=IPF129N20NM6ATMA1.pdf?ci_sign=5a3152a240c0ea7d65acde0ee8511386ec270159
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
Produkt ist nicht verfügbar
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IPT129N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF25A7E7B8C80DF&compId=IPT129N20NM6ATMA1.pdf?ci_sign=30d35994a57117cdc9873c22186519f3c8963974
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
Produkt ist nicht verfügbar
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IPT067N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF24A02318A40DF&compId=IPT067N20NM6ATMA1.pdf?ci_sign=fbaa8df17ce3a6283c04eb395687a5f77eaea2a3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 548A
Produkt ist nicht verfügbar
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IPF067N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF213CA379F60DF&compId=IPF067N20NM6ATMA1.pdf?ci_sign=f31c161fc43780799b4d4a3452fcf50711faf093
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 138A; Idm: 552A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 138A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 72nC
Pulsed drain current: 552A
Produkt ist nicht verfügbar
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ISC130N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 352A
Produkt ist nicht verfügbar
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ISC151N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF26935A115E0DF&compId=ISC151N20NM6ATMA1.pdf?ci_sign=2853389a1873421ef7b23eddc1cdd8f08a6cf58f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 74A; Idm: 296A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 200W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 15.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 31nC
Pulsed drain current: 296A
Produkt ist nicht verfügbar
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IPP095N20NM6AKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2349188A240DF&compId=IPP095N20NM6AKSA1.pdf?ci_sign=c39c87967d4d89be8e059b3a1a08a71b22ad7dae
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 116A; Idm: 464A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 116A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 464A
Produkt ist nicht verfügbar
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BCW67CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52D8FFE996469&compId=BCW67B.pdf?ci_sign=bdbfe8f0672e4b7d88af7d57146c2b876a179314
BCW67CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
158+0.46 EUR
Mindestbestellmenge: 158
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IPP60R060P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E29801E7FF4749&compId=IPP60R060P7.pdf?ci_sign=e1878468754d31d06f5fea24df11181436da83af
IPP60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R060P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82
IPB60R060P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R060P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207
IPZA60R060P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff
BC817SUE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Mounting: SMD
Collector-emitter voltage: 45V
Case: SC74
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 1W
Frequency: 170MHz
Polarisation: bipolar
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
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S25FL064LABMFA010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL064LABMFA011 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
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S25FL064LABMFA013 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL128LAGMFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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BSZ340N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4EB1EB22211C&compId=BSZ340N08NS3G-DTE.pdf?ci_sign=fcb9737eb5449cce02db625a02d11085b0a60560
BSZ340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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2ED300C17SROHSBPSA1 2ED300C17S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Technology: EiceDRIVER™; SiC
Mounting: PCB
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Type of semiconductor module: gate driver board
Kind of output: IGBT driver
Topology: IGBT half-bridge
Operating temperature: -25...85°C
Supply voltage: 14...16V DC
Output current: 30A
Frequency: 60kHz
Voltage class: 1.7kV
Case: AG-EICE
Application: for medium and high power application
Produkt ist nicht verfügbar
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BSS308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425
BSS308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
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BGX50AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b
BGX50AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; 6ns; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Features of semiconductor devices: fast switching
Semiconductor structure: bridge rectifier
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Reverse recovery time: 6ns
Power dissipation: 0.21W
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
463+0.15 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 463
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IPP80R1K2P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
48+1.5 EUR
50+1.44 EUR
54+1.33 EUR
150+1.29 EUR
Mindestbestellmenge: 40
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IPU80R1K2P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 91
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IPD80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.11 EUR
Mindestbestellmenge: 50
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IRF7465TRPBFXTMA1 infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7465TRPBF irf7465pbf.pdf
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP315PH6327XTSA1 BSP315PH6327XTSA1-dte.pdf
BSP315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
131+0.55 EUR
164+0.44 EUR
182+0.39 EUR
205+0.35 EUR
500+0.29 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
IRF6775MTRPBF pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83
IRF6775MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Power dissipation: 89W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
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PVT312LSPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: SMT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Max. operating current: 0.17A
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Max. operating current: 320mA
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4229PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4228PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B73DF1A6F5005056AB5A8F&compId=irfb4228pbf.pdf?ci_sign=c76c55ba351c4f18b4679077e4b312a62afa7c33
IRFB4228PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
32+2.26 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IDP15E65D2XKSA1 IDP15E65D2.pdf
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 100A; TO220-2; 47ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 47ns
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
51+1.42 EUR
77+0.93 EUR
100+0.9 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IDP15E65D1XKSA1 IDP15E65D1.pdf
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 120A; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Application: telecommunication
Case: TSLP-6-4
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 1511 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
715+0.1 EUR
770+0.093 EUR
893+0.08 EUR
966+0.074 EUR
1177+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
64+1.13 EUR
66+1.09 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7734PBF IRFB7734PBF.pdf
IRFB7734PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR420U pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717
BCR420U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
BCR421UE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061
BCR421UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
169+0.42 EUR
196+0.37 EUR
209+0.34 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BCR420UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
190+0.38 EUR
214+0.33 EUR
249+0.29 EUR
271+0.26 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
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BTS5210L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106
BTS5210L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.99 EUR
22+3.33 EUR
100+2.73 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
1EDC30I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC30I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
28+2.56 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
1EDI05I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
44+1.64 EUR
51+1.42 EUR
100+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7452TRPBF pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657
IRF7452TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451PBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451TRPBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7455TRPBF pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc
IRF7455TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7457TRPBF pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5
IRF7457TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLD1314ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150
TLD1314ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IPB107N20NAATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1
IPB107N20NAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.31 EUR
Mindestbestellmenge: 10
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IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95
BSZ160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 40A
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
On-state resistance: 16mΩ
Power dissipation: 63W
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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