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IDH06G65C5 IDH06G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 54A
Leakage current: 1.2µA
Power dissipation: 62W
Kind of package: tube
Heatsink thickness: 1.17...137mm
auf Bestellung 51 Stücke:
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46+1.57 EUR
48+1.5 EUR
51+1.4 EUR
Mindestbestellmenge: 46
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS4002ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
auf Bestellung 2527 Stücke:
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313+0.23 EUR
334+0.21 EUR
374+0.19 EUR
500+0.18 EUR
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BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 3125 Stücke:
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417+0.17 EUR
532+0.13 EUR
582+0.12 EUR
800+0.089 EUR
1038+0.069 EUR
1166+0.061 EUR
3000+0.055 EUR
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BAS4005E6327HTSA1 BAS4005E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
404+0.18 EUR
435+0.16 EUR
603+0.12 EUR
815+0.088 EUR
1000+0.074 EUR
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IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES IRS20752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Operating temperature: -40...125°C
Output current: -240...160mA
auf Bestellung 2584 Stücke:
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87+0.83 EUR
114+0.63 EUR
118+0.61 EUR
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IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES irf1010nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Gate charge: 0.12µC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
auf Bestellung 691 Stücke:
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44+1.64 EUR
61+1.18 EUR
100+1.04 EUR
200+1.01 EUR
250+0.99 EUR
500+0.92 EUR
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES IR2301-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Topology: MOSFET half-bridge
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
auf Bestellung 118 Stücke:
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32+2.27 EUR
37+1.96 EUR
41+1.76 EUR
48+1.52 EUR
52+1.4 EUR
95+1.34 EUR
Mindestbestellmenge: 32
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IRF7306TRPBF IRF7306TRPBF INFINEON TECHNOLOGIES irf7306pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4164 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
69+1.04 EUR
97+0.74 EUR
112+0.64 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
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AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES auirf7309q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7807ZTRPBF IRF7807ZTRPBF INFINEON TECHNOLOGIES irf7807zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Polarisation: unipolar
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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IRF7807VTRPBF IRF7807VTRPBF INFINEON TECHNOLOGIES irf7807vpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Polarisation: unipolar
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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CY8C29666-24PVXI CY8C29666-24PVXI INFINEON TECHNOLOGIES CY8C29466-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Kind of core: 8-bit
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Case: SSOP48
auf Bestellung 30 Stücke:
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4+23.58 EUR
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CY7C1312KV18-250BZXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
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IR2166PBF IR2166PBF INFINEON TECHNOLOGIES IR2166.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; DIP16; -400÷250mA; 1.8W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; PFC controller
Case: DIP16
Output current: -400...250mA
Power: 1.8W
Number of channels: 2
Supply voltage: 10...25V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Produkt ist nicht verfügbar
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IR2166STRPBF IR2166STRPBF INFINEON TECHNOLOGIES IR2166.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -400÷250mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; PFC controller
Case: SO16
Output current: -400...250mA
Power: 1.4W
Number of channels: 2
Supply voltage: 10...25V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Produkt ist nicht verfügbar
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES BSC030P03NS3GAUMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
auf Bestellung 3134 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
37+1.96 EUR
40+1.83 EUR
44+1.66 EUR
51+1.42 EUR
100+1.16 EUR
250+1.03 EUR
500+0.99 EUR
Mindestbestellmenge: 34
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BTS3050EJ BTS3050EJ INFINEON TECHNOLOGIES BTS3050EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Case: SO8-EP
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
auf Bestellung 2935 Stücke:
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48+1.52 EUR
53+1.36 EUR
64+1.13 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 48
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Case: PG-TO252-3
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 1081 Stücke:
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38+1.89 EUR
42+1.73 EUR
45+1.62 EUR
50+1.44 EUR
100+1.26 EUR
250+1.16 EUR
500+1.07 EUR
1000+1.06 EUR
Mindestbestellmenge: 38
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Case: SO8-EP
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
47+1.54 EUR
55+1.3 EUR
100+1.17 EUR
250+1.09 EUR
500+1.03 EUR
1000+0.93 EUR
Mindestbestellmenge: 42
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2EDN7524FXTMA1 2EDN7524FXTMA1 INFINEON TECHNOLOGIES 2EDN752x-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Voltage class: 20V
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Protection: undervoltage UVP
Output current: -5...5A
auf Bestellung 1342 Stücke:
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75+0.96 EUR
81+0.89 EUR
Mindestbestellmenge: 75
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2EDN8524FXTMA1 2EDN8524FXTMA1 INFINEON TECHNOLOGIES Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Voltage class: 20V
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Protection: undervoltage UVP
Output current: -5...5A
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
114+0.63 EUR
119+0.6 EUR
123+0.58 EUR
Mindestbestellmenge: 88
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES IR4427PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
35+2.06 EUR
Mindestbestellmenge: 29
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IRFB4321PBF IRFB4321PBF INFINEON TECHNOLOGIES IRFB4321PBF-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.63 EUR
27+2.66 EUR
33+2.17 EUR
50+1.94 EUR
100+1.87 EUR
Mindestbestellmenge: 20
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BTS70081EPPXUMA1 INFINEON TECHNOLOGIES BTS70081EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 8.8mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70081EPAXUMA1 INFINEON TECHNOLOGIES BTS70081EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 16.4mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES irfs3004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 1.75mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 380W
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.7 EUR
23+3.13 EUR
50+2.92 EUR
Mindestbestellmenge: 20
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES IPP60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 INFINEON TECHNOLOGIES IPP110N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
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IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPDQ65R099CFD7AXTMA1 INFINEON TECHNOLOGIES Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
750+3.55 EUR
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES irfl4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
115+0.63 EUR
152+0.47 EUR
172+0.42 EUR
200+0.38 EUR
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IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES IRFL024ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES irfl4310pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFL4315TRPBF IRFL4315TRPBF INFINEON TECHNOLOGIES irfl4315pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IKW25N120CS7XKSA1 IKW25N120CS7XKSA1 INFINEON TECHNOLOGIES IKW25N120CS7.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 38ns
Turn-off time: 490ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BC847BWH6327XTSA1 BC847BWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES irlb8748pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 676 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
66+1.08 EUR
79+0.91 EUR
101+0.71 EUR
119+0.6 EUR
137+0.52 EUR
250+0.46 EUR
Mindestbestellmenge: 51
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IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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14+5.21 EUR
25+4.66 EUR
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IRLHS2242TRPBF IRLHS2242TRPBF INFINEON TECHNOLOGIES irlhs2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Power dissipation: 2.1W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
296+0.24 EUR
355+0.2 EUR
Mindestbestellmenge: 162
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IRFU3910PBF IRFU3910PBF INFINEON TECHNOLOGIES irfr3910.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Case: IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Gate charge: 29.3nC
On-state resistance: 0.115Ω
Power dissipation: 52W
Gate-source voltage: ±20V
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
150+0.57 EUR
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BC857BE6327 BC857BE6327 INFINEON TECHNOLOGIES BC857B-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES 1EDN7550B.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1370 Stücke:
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88+0.82 EUR
97+0.74 EUR
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IDB30E120ATMA1 IDB30E120ATMA1 INFINEON TECHNOLOGIES IDB30E120ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3; Ufmax: 2.15V
Mounting: SMD
Max. forward voltage: 2.15V
Load current: 30A
Max. off-state voltage: 1.2kV
Case: TO263-3
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
53+1.36 EUR
100+1.26 EUR
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IDB30E60ATMA1 IDB30E60ATMA1 INFINEON TECHNOLOGIES IDB30E60ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3; Ufmax: 2V
Mounting: SMD
Max. forward voltage: 2V
Load current: 30A
Max. off-state voltage: 0.6kV
Case: TO263-3
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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S25FL128SAGNFV001 S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Kind of memory: NOR
Kind of interface: serial
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Case: SOT23
Semiconductor structure: double series
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES IRFB7440PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
80+0.9 EUR
91+0.79 EUR
Mindestbestellmenge: 60
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES infineon-irl40sc228-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.6 EUR
20+3.72 EUR
22+3.3 EUR
26+2.83 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 104W
Technology: CoolMOS™ P7
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
35+2.1 EUR
36+2 EUR
Mindestbestellmenge: 31
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IPA95R450P7XKSA1 IPA95R450P7XKSA1 INFINEON TECHNOLOGIES IPA95R450P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ P7
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
29+2.5 EUR
33+2.19 EUR
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IPA80R450P7XKSA1 IPA80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 29W
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
49+1.47 EUR
55+1.3 EUR
Mindestbestellmenge: 29
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IPP80R450P7XKSA1 IPP80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Case: PG-TO220-3
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
On-state resistance: 0.45Ω
Power dissipation: 73W
Pulsed drain current: 29A
Technology: CoolMOS™ P7
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
29+2.46 EUR
Mindestbestellmenge: 28
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IPAN70R450P7SXKSA1 IPAN70R450P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R450P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 700V
Gate-source voltage: ±16V
Drain current: 6.5A
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Power dissipation: 22.7W
Technology: CoolMOS™ P7
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
73+0.99 EUR
82+0.87 EUR
Mindestbestellmenge: 63
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IPA60R450E6XKSA1 IPA60R450E6XKSA1 INFINEON TECHNOLOGIES IPA60R450E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Gate-source voltage: ±20V
Drain current: 9.2A
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ E6
Produkt ist nicht verfügbar
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 INFINEON TECHNOLOGIES IPD80R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Case: PG-TO252-3
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 73W
Technology: CoolMOS™ P7
Produkt ist nicht verfügbar
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IDH06G65C5
IDH06G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 54A
Leakage current: 1.2µA
Power dissipation: 62W
Kind of package: tube
Heatsink thickness: 1.17...137mm
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
48+1.5 EUR
51+1.4 EUR
Mindestbestellmenge: 46
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327.pdf
BAS4002ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
auf Bestellung 2527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
334+0.21 EUR
374+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 313
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BAS4004E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 3125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
532+0.13 EUR
582+0.12 EUR
800+0.089 EUR
1038+0.069 EUR
1166+0.061 EUR
3000+0.055 EUR
Mindestbestellmenge: 417
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BAS4005E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4005E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
404+0.18 EUR
435+0.16 EUR
603+0.12 EUR
815+0.088 EUR
1000+0.074 EUR
Mindestbestellmenge: 334
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IRS20752LTRPBF IRS20752ltrpbf.pdf
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Operating temperature: -40...125°C
Output current: -240...160mA
auf Bestellung 2584 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
114+0.63 EUR
118+0.61 EUR
Mindestbestellmenge: 87
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IRF1010NSTRLPBF irf1010nspbf.pdf
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Gate charge: 0.12µC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
auf Bestellung 691 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
61+1.18 EUR
100+1.04 EUR
200+1.01 EUR
250+0.99 EUR
500+0.92 EUR
Mindestbestellmenge: 44
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IR2301SPBF IR2301-DTE.pdf
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Topology: MOSFET half-bridge
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
37+1.96 EUR
41+1.76 EUR
48+1.52 EUR
52+1.4 EUR
95+1.34 EUR
Mindestbestellmenge: 32
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IRF7306TRPBF description irf7306pbf.pdf
IRF7306TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
69+1.04 EUR
97+0.74 EUR
112+0.64 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
Mindestbestellmenge: 50
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AUIRF7309QTR auirf7309q.pdf
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7807ZTRPBF irf7807zpbf.pdf
IRF7807ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Polarisation: unipolar
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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IRF7807VTRPBF irf7807vpbf.pdf
IRF7807VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Polarisation: unipolar
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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CY8C29666-24PVXI CY8C29466-24PVXI.pdf
CY8C29666-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Kind of core: 8-bit
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Case: SSOP48
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.58 EUR
Mindestbestellmenge: 4
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CY7C1312KV18-250BZXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2166PBF IR2166.pdf
IR2166PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; DIP16; -400÷250mA; 1.8W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; PFC controller
Case: DIP16
Output current: -400...250mA
Power: 1.8W
Number of channels: 2
Supply voltage: 10...25V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2166STRPBF IR2166.pdf
IR2166STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -400÷250mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; PFC controller
Case: SO16
Output current: -400...250mA
Power: 1.4W
Number of channels: 2
Supply voltage: 10...25V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1-DTE.pdf
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
auf Bestellung 3134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
37+1.96 EUR
40+1.83 EUR
44+1.66 EUR
51+1.42 EUR
100+1.16 EUR
250+1.03 EUR
500+0.99 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BTS3050EJ BTS3050EJ.pdf
BTS3050EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Case: SO8-EP
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
53+1.36 EUR
64+1.13 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BTS3035TF BTS3035TF.pdf
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Case: PG-TO252-3
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
42+1.73 EUR
45+1.62 EUR
50+1.44 EUR
100+1.26 EUR
250+1.16 EUR
500+1.07 EUR
1000+1.06 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Case: SO8-EP
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
47+1.54 EUR
55+1.3 EUR
100+1.17 EUR
250+1.09 EUR
500+1.03 EUR
1000+0.93 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7524FXTMA1 2EDN752x-DTE.pdf
2EDN7524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Voltage class: 20V
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Protection: undervoltage UVP
Output current: -5...5A
auf Bestellung 1342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
81+0.89 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
2EDN8524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Voltage class: 20V
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Protection: undervoltage UVP
Output current: -5...5A
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
114+0.63 EUR
119+0.6 EUR
123+0.58 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description IR4427PBF.pdf
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
35+2.06 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4321PBF description IRFB4321PBF-DTE.pdf
IRFB4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
27+2.66 EUR
33+2.17 EUR
50+1.94 EUR
100+1.87 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BTS70081EPPXUMA1 BTS70081EPP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 8.8mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70081EPAXUMA1 BTS70081EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 16.4mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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IRFB3004PBF irfs3004pbf.pdf
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 1.75mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 380W
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
23+3.13 EUR
50+2.92 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P6XKSA1 IPP60R099P6-DTE.pdf
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP110N20N3GXKSA1 IPP110N20N3G-DTE.pdf
IPP110N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R099CFD7AXTMA1 Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+3.55 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
IRFL4105TRPBF irfl4105pbf.pdf
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
115+0.63 EUR
152+0.47 EUR
172+0.42 EUR
200+0.38 EUR
Mindestbestellmenge: 90
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IRFL024ZTRPBF IRFL024ZTRPBF.pdf
IRFL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL4310TRPBF irfl4310pbf.pdf
IRFL4310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL4315TRPBF irfl4315pbf.pdf
IRFL4315TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IKW25N120CS7XKSA1 IKW25N120CS7.pdf
IKW25N120CS7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 38ns
Turn-off time: 490ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BC847BWH6327XTSA1 bc847_8_9_bc850.pdf
BC847BWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRLB8748PBF irlb8748pbf.pdf
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 676 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
66+1.08 EUR
79+0.91 EUR
101+0.71 EUR
119+0.6 EUR
137+0.52 EUR
250+0.46 EUR
Mindestbestellmenge: 51
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IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
25+4.66 EUR
Mindestbestellmenge: 14
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IRLHS2242TRPBF irlhs2242pbf.pdf
IRLHS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Power dissipation: 2.1W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
296+0.24 EUR
355+0.2 EUR
Mindestbestellmenge: 162
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IRFU3910PBF description irfr3910.pdf
IRFU3910PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Case: IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Gate charge: 29.3nC
On-state resistance: 0.115Ω
Power dissipation: 52W
Gate-source voltage: ±20V
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
150+0.57 EUR
Mindestbestellmenge: 117
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BC857BE6327 BC857B-DTE.pdf
BC857BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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1EDN7550BXTSA1 1EDN7550B.pdf
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
97+0.74 EUR
Mindestbestellmenge: 88
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IDB30E120ATMA1 IDB30E120ATMA1.pdf
IDB30E120ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3; Ufmax: 2.15V
Mounting: SMD
Max. forward voltage: 2.15V
Load current: 30A
Max. off-state voltage: 1.2kV
Case: TO263-3
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
53+1.36 EUR
100+1.26 EUR
Mindestbestellmenge: 35
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IDB30E60ATMA1 IDB30E60ATMA1.pdf
IDB30E60ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3; Ufmax: 2V
Mounting: SMD
Max. forward voltage: 2V
Load current: 30A
Max. off-state voltage: 0.6kV
Case: TO263-3
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV001
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Kind of memory: NOR
Kind of interface: serial
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
Mindestbestellmenge: 27
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BAT5404E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Case: SOT23
Semiconductor structure: double series
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
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TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF.pdf
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
80+0.9 EUR
91+0.79 EUR
Mindestbestellmenge: 60
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IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.6 EUR
20+3.72 EUR
22+3.3 EUR
26+2.83 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 104W
Technology: CoolMOS™ P7
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
35+2.1 EUR
36+2 EUR
Mindestbestellmenge: 31
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IPA95R450P7XKSA1 IPA95R450P7.pdf
IPA95R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ P7
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
29+2.5 EUR
33+2.19 EUR
Mindestbestellmenge: 23
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IPA80R450P7XKSA1 Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be
IPA80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 29W
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
49+1.47 EUR
55+1.3 EUR
Mindestbestellmenge: 29
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IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Case: PG-TO220-3
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
On-state resistance: 0.45Ω
Power dissipation: 73W
Pulsed drain current: 29A
Technology: CoolMOS™ P7
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
29+2.46 EUR
Mindestbestellmenge: 28
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IPAN70R450P7SXKSA1 IPAN70R450P7S.pdf
IPAN70R450P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 700V
Gate-source voltage: ±16V
Drain current: 6.5A
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Power dissipation: 22.7W
Technology: CoolMOS™ P7
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
73+0.99 EUR
82+0.87 EUR
Mindestbestellmenge: 63
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IPA60R450E6XKSA1 IPA60R450E6-DTE.pdf
IPA60R450E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Gate-source voltage: ±20V
Drain current: 9.2A
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ E6
Produkt ist nicht verfügbar
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IPD80R450P7ATMA1 IPD80R450P7.pdf
IPD80R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Case: PG-TO252-3
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 73W
Technology: CoolMOS™ P7
Produkt ist nicht verfügbar
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