Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149883) > Seite 2480 nach 2499

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2475 2476 2477 2478 2479 2480 2481 2482 2483 2484 2485 2490 2499  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XMC4402F100K256ABXQSA1 XMC4402F100K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4402F64K256ABXQSA1 XMC4402F64K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F100F256ABXQSA1 XMC4400F100F256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F100F512ABXQMA1 XMC4400F100F512ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F100K256ABXQSA1 XMC4400F100K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F64F512ABXQMA1 XMC4400F64F512ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F64K256ABXQSA1 XMC4400F64K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD70N03S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 70A; 68W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; QFN24; 10mA; USB 1.1
Operating temperature: -40...105°C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Version: USB 1.1
DC supply current: 10mA
auf Bestellung 3582 Stücke:
Lieferzeit 14-21 Tag (e)
490+1.57 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Mounting: SMD
Collector-emitter voltage: 45V
Case: SC74
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 1W
Frequency: 170MHz
Polarisation: bipolar
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
126+0.57 EUR
Mindestbestellmenge: 126
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA011 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA013 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ340N08NS3GATMA1 BSZ340N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4EB1EB22211C&compId=BSZ340N08NS3G-DTE.pdf?ci_sign=fcb9737eb5449cce02db625a02d11085b0a60560 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
On-state resistance: 16mΩ
Number of channels: 1
Output current: 5.5A
Case: TO252-5
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED300C17SROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Technology: EiceDRIVER™; SiC
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SMBD914E6327HTSA1 SMBD914E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8368E20BE8469&compId=SMBD914E6327HTSA1.pdf?ci_sign=d7e375d887a04009b6541d4fc1a0393c8d2ccbbc Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Power dissipation: 0.37W
Case: SOT23
Mounting: SMD
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Type of diode: switching
Load current: 0.25A
Max. off-state voltage: 100V
Semiconductor structure: single diode
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BGX50AE6327 BGX50AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; 6ns; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Features of semiconductor devices: fast switching
Semiconductor structure: bridge rectifier
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Reverse recovery time: 6ns
Power dissipation: 0.21W
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
463+0.15 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 463
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R1K4CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 3.9A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 1.22Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.02 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
48+1.5 EUR
50+1.44 EUR
54+1.33 EUR
150+1.29 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVG612PBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.08 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 INFINEON TECHNOLOGIES BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 1.2A; 1.8W; SOT223; SMT
Mounting: SMD
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: 20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: N
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
Case: SOT223
Gate charge: 4.5nC
On-state resistance: 329mΩ
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BSP315PH6327XTSA1 BSP315PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92148C01BBD1CC&compId=BSP315PH6327XTSA1-dte.pdf?ci_sign=d16382970b6d0f196c8c2dc24b5aae9857640e5b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -60V
Drain current: -1.17A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
131+0.55 EUR
164+0.44 EUR
182+0.39 EUR
205+0.35 EUR
500+0.29 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Power dissipation: 89W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT312LSPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: SMT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Max. operating current: 0.17A
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT312PBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Max. operating current: 320mA
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT312SPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4228PBF IRFB4228PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B73DF1A6F5005056AB5A8F&compId=irfb4228pbf.pdf?ci_sign=c76c55ba351c4f18b4679077e4b312a62afa7c33 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
32+2.26 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 100A; TO220-2; 47ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 47ns
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
51+1.42 EUR
77+0.93 EUR
100+0.9 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 120A; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 549mΩ
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Application: telecommunication
Case: TSLP-6-4
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 1511 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
715+0.1 EUR
770+0.093 EUR
893+0.08 EUR
966+0.074 EUR
1177+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAT6406E6327HTSA1 BAT6406E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
auf Bestellung 5779 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
511+0.14 EUR
562+0.13 EUR
787+0.091 EUR
1102+0.065 EUR
1166+0.061 EUR
3000+0.059 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT64E6327HTSA1 BAT64E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: single diode
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
345+0.21 EUR
458+0.16 EUR
573+0.12 EUR
708+0.1 EUR
1238+0.058 EUR
1309+0.055 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Mounting: THT
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 186nC
On-state resistance: 2.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 294W
Drain current: 195A
Kind of package: tube
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5DC2D657A469&compId=IRFB7734PBF.pdf?ci_sign=bc7cc28ffb0486c427e821c8b7317f1232fe5615 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR420U BCR420U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
BCR421UE6327 BCR421UE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
169+0.42 EUR
196+0.37 EUR
209+0.34 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BCR420UE6327HTSA1 BCR420UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
190+0.38 EUR
214+0.33 EUR
249+0.29 EUR
271+0.26 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP100N06S2L05AKSA2 INFINEON TECHNOLOGIES Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.35 EUR
200+3 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280CFD7 IPD60R280CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV49H6327XTSA1 INFINEON TECHNOLOGIES BCV29_49.pdf Category: Transistors - Unclassified
Description: BCV49H6327XTSA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.18 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BTS5210L BTS5210L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.99 EUR
22+3.33 EUR
100+2.73 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
XMC4402F100K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4402F100K256ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4402F64K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4402F64K256ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F100F256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100F256ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F100F512ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100F512ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F100K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100K256ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F64F512ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F64F512ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4400F64K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F64K256ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 70A; 68W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; QFN24; 10mA; USB 1.1
Operating temperature: -40...105°C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Version: USB 1.1
DC supply current: 10mA
auf Bestellung 3582 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+1.57 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817SUE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff
BC817SUE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Mounting: SMD
Collector-emitter voltage: 45V
Case: SC74
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 1W
Frequency: 170MHz
Polarisation: bipolar
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA011 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA013 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGMFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ340N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4EB1EB22211C&compId=BSZ340N08NS3G-DTE.pdf?ci_sign=fcb9737eb5449cce02db625a02d11085b0a60560
BSZ340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5016SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35
BTS5016SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
On-state resistance: 16mΩ
Number of channels: 1
Output current: 5.5A
Case: TO252-5
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED300C17SROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Technology: EiceDRIVER™; SiC
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425
BSS308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SMBD914E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8368E20BE8469&compId=SMBD914E6327HTSA1.pdf?ci_sign=d7e375d887a04009b6541d4fc1a0393c8d2ccbbc
SMBD914E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Power dissipation: 0.37W
Case: SOT23
Mounting: SMD
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Type of diode: switching
Load current: 0.25A
Max. off-state voltage: 100V
Semiconductor structure: single diode
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BGX50AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b
BGX50AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; 6ns; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Features of semiconductor devices: fast switching
Semiconductor structure: bridge rectifier
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Reverse recovery time: 6ns
Power dissipation: 0.21W
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
463+0.15 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 463
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R1K4CEXKSA2 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 3.9A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 1.22Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.02 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R1K2P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
48+1.5 EUR
50+1.44 EUR
54+1.33 EUR
150+1.29 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.08 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBFXTMA1 infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBF pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 1.2A; 1.8W; SOT223; SMT
Mounting: SMD
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: 20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: N
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
Case: SOT223
Gate charge: 4.5nC
On-state resistance: 329mΩ
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BSP315PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92148C01BBD1CC&compId=BSP315PH6327XTSA1-dte.pdf?ci_sign=d16382970b6d0f196c8c2dc24b5aae9857640e5b
BSP315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -60V
Drain current: -1.17A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
131+0.55 EUR
164+0.44 EUR
182+0.39 EUR
205+0.35 EUR
500+0.29 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
IRF6775MTRPBF pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83
IRF6775MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Power dissipation: 89W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT312LSPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: SMT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Max. operating current: 0.17A
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Max. operating current: 320mA
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.38 EUR
100+4.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4229PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4228PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B73DF1A6F5005056AB5A8F&compId=irfb4228pbf.pdf?ci_sign=c76c55ba351c4f18b4679077e4b312a62afa7c33
IRFB4228PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
32+2.26 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IDP15E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 100A; TO220-2; 47ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 47ns
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
51+1.42 EUR
77+0.93 EUR
100+0.9 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IDP15E65D1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 120A; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 549mΩ
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796
BSZ180P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a
BSZ180P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Application: telecommunication
Case: TSLP-6-4
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae
BSZ100N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 1511 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
715+0.1 EUR
770+0.093 EUR
893+0.08 EUR
966+0.074 EUR
1177+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAT6406E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6406E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
auf Bestellung 5779 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
511+0.14 EUR
562+0.13 EUR
787+0.091 EUR
1102+0.065 EUR
1166+0.061 EUR
3000+0.059 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT64E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT64E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: single diode
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
345+0.21 EUR
458+0.16 EUR
573+0.12 EUR
708+0.1 EUR
1238+0.058 EUR
1309+0.055 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7534PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Mounting: THT
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 186nC
On-state resistance: 2.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 294W
Drain current: 195A
Kind of package: tube
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7734PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5DC2D657A469&compId=IRFB7734PBF.pdf?ci_sign=bc7cc28ffb0486c427e821c8b7317f1232fe5615
IRFB7734PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR420U pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717
BCR420U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
BCR421UE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061
BCR421UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
169+0.42 EUR
196+0.37 EUR
209+0.34 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BCR420UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
190+0.38 EUR
214+0.33 EUR
249+0.29 EUR
271+0.26 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145
BSZ100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP100N06S2L05AKSA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.35 EUR
200+3 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0
IPD60R280CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV49H6327XTSA1 BCV29_49.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BCV49H6327XTSA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.18 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BTS5210L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106
BTS5210L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.99 EUR
22+3.33 EUR
100+2.73 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2475 2476 2477 2478 2479 2480 2481 2482 2483 2484 2485 2490 2499  [ Nächste Seite >> ]