Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (135225) > Seite 2232 nach 2254
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced |
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XC87816FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64 Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 3kB SRAM; 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
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| IPD60R400CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.3A Pulsed drain current: 30A Power dissipation: 112W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhanced |
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IPB65R310CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3 Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 104.2W Polarisation: unipolar Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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AIKW20N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
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IRLR8103VTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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| T360N22TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 2.2kV Max. load current: 550A Load current: 360A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 5kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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| T560N14TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.4kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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| T560N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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| T560N18TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA Max. off-state voltage: 1.8kV Load current: 559A Max. load current: 809A Case: BG-T4814K0-1 Max. forward impulse current: 8kA Gate current: 200mA Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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| T860N36TOFVT | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 3.6kV; Ifmax: 2kA; 860A; Igt: 250mA; in-tray Type of thyristor: hockey-puck Max. off-state voltage: 3.6kV Max. load current: 2kA Load current: 860A Gate current: 250mA Case: BG-T7526K-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 18kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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IRFB4127PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 76A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Pulsed drain current: 34A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN70R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 7.2W Case: PG-SOT223 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPS70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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IPSA70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| AUIPS72211RTRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; DPAK5; reel; 2.5W Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 On-state resistance: 35mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry |
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| AUIPS7081RTRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 On-state resistance: 70mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry |
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IRFR120NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSC0910NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.1A Power dissipation: 208.3W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
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IPS65R950C6AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL Mounting: THT Case: IPAK SL Power dissipation: 37W Polarisation: unipolar Technology: CoolMOS™ Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 0.95Ω Gate-source voltage: ±20V |
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IPA60R450E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.42Ω Power dissipation: 310W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET |
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IPB65R660CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.66Ω Power dissipation: 62.5W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 6A |
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IPI200N25N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 88A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of channel: enhanced |
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BSC046N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
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IRL40B209 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 293A Pulsed drain current: 1707A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.25mΩ Mounting: THT Kind of channel: enhanced |
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IRL40B212 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 179A Power dissipation: 231W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL40B215 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 116A Power dissipation: 143W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL60B216 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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| TLS805B1LDVXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 1.2...13.2V Output current: 0.05A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 2.75...42V |
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BCR573E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: PNP Mounting: SMD Case: SOT23 Power dissipation: 0.33W Frequency: 150MHz Polarisation: bipolar Base-emitter resistor: 10kΩ Collector-emitter voltage: 50V Collector current: 0.5A Kind of transistor: BRT Base resistor: 1kΩ |
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IRFB4615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Drain-source voltage: 150V Drain current: 35A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 144W Polarisation: unipolar Gate charge: 26nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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IDB30E120ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3 Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: SMD Case: TO263-3 Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode |
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IDB30E60ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; TO263-3 Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263-3 |
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IRF9321TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9328TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9332TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9335TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.4A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF9410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFML8244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 5.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 5.4nC Kind of channel: enhanced |
auf Bestellung 2265 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS316NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.28Ω Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 0.5W Polarisation: unipolar Drain current: 1.4A Drain-source voltage: 30V |
auf Bestellung 13285 Stücke: Lieferzeit 14-21 Tag (e) |
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BSD214SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 1.5A Drain-source voltage: 20V Case: SOT363 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Type of transistor: N-MOSFET |
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BSD316SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.4A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced |
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BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 847 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 7555 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 7256 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL214NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6 Mounting: SMD Case: TSOP6 Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.5W |
Produkt ist nicht verfügbar |
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BCR185WH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IDW10G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: PG-TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 1.8V Load current: 10A Leakage current: 2µA Type of diode: Schottky rectifying Max. forward impulse current: 46A |
Produkt ist nicht verfügbar |
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XC878CM16FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: CAN x2; SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
Produkt ist nicht verfügbar |
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IRF135B203 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135S203 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 0.27µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SPP80P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3 Mounting: THT Power dissipation: 340W Polarisation: unipolar Kind of package: tube Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 Drain-source voltage: -60V Drain current: -80A On-state resistance: 23mΩ Type of transistor: P-MOSFET |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP77E6433 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
Produkt ist nicht verfügbar |
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IRS2186PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
Produkt ist nicht verfügbar |
| IPB015N08N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| XC87816FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar
| IPD60R400CEAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB65R310CFDATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| AIKW20N60CTXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IRLR8103VTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| T360N22TOFXPSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
| T560N14TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
| T560N16TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
| T560N18TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Max. load current: 809A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Max. load current: 809A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
| T860N36TOFVT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 3.6kV; Ifmax: 2kA; 860A; Igt: 250mA; in-tray
Type of thyristor: hockey-puck
Max. off-state voltage: 3.6kV
Max. load current: 2kA
Load current: 860A
Gate current: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 18kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 3.6kV; Ifmax: 2kA; 860A; Igt: 250mA; in-tray
Type of thyristor: hockey-puck
Max. off-state voltage: 3.6kV
Max. load current: 2kA
Load current: 860A
Gate current: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 18kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
| IRFB4127PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.46 EUR |
| 24+ | 3.06 EUR |
| 27+ | 2.66 EUR |
| 29+ | 2.52 EUR |
| IRFS4410TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA70R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Pulsed drain current: 34A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Pulsed drain current: 34A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.32 EUR |
| 61+ | 1.19 EUR |
| 70+ | 1.03 EUR |
| 80+ | 0.9 EUR |
| 83+ | 0.86 EUR |
| IPN70R360P7SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPS70R360P7SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPAN70R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 54+ | 1.33 EUR |
| 60+ | 1.2 EUR |
| 71+ | 1.02 EUR |
| 75+ | 0.96 EUR |
| IPSA70R360P7SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| AUIPS72211RTRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; DPAK5; reel; 2.5W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 35mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; DPAK5; reel; 2.5W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 35mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Produkt ist nicht verfügbar
| AUIPS7081RTRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 70mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 70mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Produkt ist nicht verfügbar
| IRFR120NTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC0910NDIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD65R250C6XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
Power dissipation: 208.3W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
Power dissipation: 208.3W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPS65R950C6AKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPA60R450E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB65R420CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPB65R660CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Produkt ist nicht verfügbar
| IPI200N25N3GAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC046N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRL40B209 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRL40B212 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| IRL40B215 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| IRL60B216 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| TLS805B1LDVXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2...13.2V
Output current: 0.05A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 2.75...42V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2...13.2V
Output current: 0.05A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 2.75...42V
Produkt ist nicht verfügbar
| BCR573E6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: PNP
Mounting: SMD
Case: SOT23
Power dissipation: 0.33W
Frequency: 150MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: PNP
Mounting: SMD
Case: SOT23
Power dissipation: 0.33W
Frequency: 150MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
Produkt ist nicht verfügbar
| IRFB4615PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: 150V
Drain current: 35A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Gate charge: 26nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: 150V
Drain current: 35A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Gate charge: 26nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.29 EUR |
| 36+ | 2.03 EUR |
| 42+ | 1.72 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.12 EUR |
| IDB30E120ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Case: TO263-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Case: TO263-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| IDB30E60ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263-3
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263-3
Produkt ist nicht verfügbar
| IRF9321TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9328TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9332TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9335TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9410TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFML8244TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhanced
auf Bestellung 2265 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 400+ | 0.18 EUR |
| 440+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| BSS316NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.28Ω
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 1.4A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.28Ω
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 1.4A
Drain-source voltage: 30V
auf Bestellung 13285 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 234+ | 0.31 EUR |
| 358+ | 0.2 EUR |
| 435+ | 0.16 EUR |
| 960+ | 0.075 EUR |
| 1015+ | 0.07 EUR |
| 9000+ | 0.068 EUR |
| BSD214SNH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Drain-source voltage: 20V
Case: SOT363
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Drain-source voltage: 20V
Case: SOT363
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSD316SNH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSS205NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 250+ | 0.29 EUR |
| 329+ | 0.22 EUR |
| 447+ | 0.16 EUR |
| 794+ | 0.09 EUR |
| 847+ | 0.084 EUR |
| BSS306NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7555 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 465+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 740+ | 0.097 EUR |
| 785+ | 0.092 EUR |
| BSS806NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7256 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 195+ | 0.37 EUR |
| 242+ | 0.3 EUR |
| 293+ | 0.24 EUR |
| 355+ | 0.2 EUR |
| 650+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| BSL214NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Produkt ist nicht verfügbar
| BCR185WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 807+ | 0.089 EUR |
| 898+ | 0.08 EUR |
| 1017+ | 0.07 EUR |
| 1177+ | 0.061 EUR |
| 1244+ | 0.057 EUR |
| IPB024N08N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IDW10G65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
Produkt ist nicht verfügbar
| XC878CM16FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar
| IRF135B203 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.85 EUR |
| 28+ | 2.57 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| IRF135S203 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SPP80P06PHXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.59 EUR |
| 15+ | 5.02 EUR |
| 19+ | 3.83 EUR |
| 20+ | 3.62 EUR |
| BSP77E6433 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Produkt ist nicht verfügbar
| IRS2186PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar