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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Type of diode: Schottky rectifying
Mounting: SMD
Case: SC79
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
388+0.18 EUR
477+0.15 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 239
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BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4EECEAA10C259&compId=BTS5030-1EJA.pdf?ci_sign=25f2afe1cf2c7472cefa85b9ca4559e7261c2c31 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 1.9W
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
40+1.79 EUR
43+1.69 EUR
250+1.63 EUR
Mindestbestellmenge: 21
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BTS6133D BTS6133D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987EA20CFB6469&compId=BTS6133D.pdf?ci_sign=2f43acd29dc3b9b6e224e7f86f62b1384a1b7c82 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.49 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 14
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BTS6143D BTS6143D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B42634788B6469&compId=BTS6143D.pdf?ci_sign=fc01caa9553195a299c036982da51db7e3ca4de4 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 1032 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.21 EUR
32+2.27 EUR
34+2.14 EUR
1000+2.12 EUR
Mindestbestellmenge: 14
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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BA89202VH6127XTSA1 BA89202VH6127XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1707+0.042 EUR
1806+0.04 EUR
Mindestbestellmenge: 582
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IRF7842TRPBF IRF7842TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 3049 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
53+1.36 EUR
82+0.88 EUR
87+0.83 EUR
500+0.8 EUR
Mindestbestellmenge: 38
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IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Version: ESD
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±16V
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
122+0.59 EUR
130+0.55 EUR
135+0.53 EUR
148+0.48 EUR
Mindestbestellmenge: 107
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BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
477+0.15 EUR
724+0.099 EUR
1367+0.052 EUR
1446+0.049 EUR
Mindestbestellmenge: 264
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1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD725C62F8FF8BF&compId=1EDN7550B.pdf?ci_sign=d62005bdf2be1827abf849df53db753bfce48e1c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Mounting: SMD
Case: PG-SOT23-6
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Voltage class: 80V
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
75+0.96 EUR
107+0.67 EUR
112+0.64 EUR
Mindestbestellmenge: 66
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IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.33 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 14
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IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 40
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IRFIZ24NPBF IRFIZ24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA3AF1A6F5005056AB5A8F&compId=irfiz24n.pdf?ci_sign=ea6efa5688af3fcfb95c043bff4479f4f56c09fc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
53+1.37 EUR
83+0.87 EUR
88+0.82 EUR
100+0.79 EUR
Mindestbestellmenge: 49
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BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 13725 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
481+0.15 EUR
601+0.12 EUR
667+0.11 EUR
769+0.093 EUR
1690+0.042 EUR
1793+0.04 EUR
Mindestbestellmenge: 295
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8EF625A16D1BF&compId=IPI65R099C6-DTE.pdf?ci_sign=b7ecdbd0817188c32fbc3bd9e75ec036c5cb4a3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB914862BA111BF&compId=IPL65R099C7-DTE.pdf?ci_sign=6b815f4bb7536f080aad6f5d4850b9f64b26de1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB944D4022D91BF&compId=IPP65R099C6-DTE.pdf?ci_sign=59108e7d9ce3a0b6f5caf391c2a545255e688e7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BAT6404WH6327XTSA1 BAT6404WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
auf Bestellung 4195 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
309+0.23 EUR
385+0.19 EUR
468+0.15 EUR
562+0.13 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 228
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BAT6406WH6327XTSA1 BAT6406WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward impulse current: 0.8A
auf Bestellung 10240 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
782+0.092 EUR
848+0.084 EUR
Mindestbestellmenge: 264
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IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11.4...18V DC
Output current: -7...2A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
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BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward impulse current: 0.1A
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
400+0.18 EUR
542+0.13 EUR
966+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 209
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IRFS7734TRLPBF IRFS7734TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
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IKW25N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 38ns
Turn-off time: 490ns
Produkt ist nicht verfügbar
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IKW40N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 56A
Pulsed collector current: 120A
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7F60E098411C&compId=IPP114N12N3G-DTE.pdf?ci_sign=3f321fd03aadd96b8be5a2518eadab640e500888 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.27 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 22
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IRS2184STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
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IRS2453DSTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7ED3F1A6F5005056AB5A8F&compId=irs2453d.pdf?ci_sign=d32bc0a67105279d411e7001c66a71b342acb3d4 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Power: 1W
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
44+1.63 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BAR6502VH6327XTSA1 INFINEON TECHNOLOGIES bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
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FM24CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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S29AL008J55TFIR23 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29GL256S10DHA020 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHB020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHB023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV23 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHV010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHV020 INFINEON TECHNOLOGIES FASLS03740-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHV023 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10FHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY15B204QN-40SXE INFINEON TECHNOLOGIES Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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CY15B204QN-40SXET INFINEON TECHNOLOGIES Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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S29GL01GT11DHIV20 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11DHIV23 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11DHV023 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV10 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV20 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV23 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3005B02VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Type of diode: Schottky rectifying
Mounting: SMD
Case: SC79
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
388+0.18 EUR
477+0.15 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BTS5030-1EJA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4EECEAA10C259&compId=BTS5030-1EJA.pdf?ci_sign=25f2afe1cf2c7472cefa85b9ca4559e7261c2c31
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 1.9W
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
40+1.79 EUR
43+1.69 EUR
250+1.63 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BTS6133D pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987EA20CFB6469&compId=BTS6133D.pdf?ci_sign=2f43acd29dc3b9b6e224e7f86f62b1384a1b7c82
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.49 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BTS6143D description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B42634788B6469&compId=BTS6143D.pdf?ci_sign=fc01caa9553195a299c036982da51db7e3ca4de4
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 1032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
32+2.27 EUR
34+2.14 EUR
1000+2.12 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TT215N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BA89202VH6127XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA89202VH6127XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1707+0.042 EUR
1806+0.04 EUR
Mindestbestellmenge: 582
Im Einkaufswagen  Stück im Wert von  UAH
IRF7842TRPBF description pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c
IRF7842TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 3049 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
53+1.36 EUR
82+0.88 EUR
87+0.83 EUR
500+0.8 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4310ZPBF pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d
IRFSL4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R750P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Version: ESD
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±16V
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
122+0.59 EUR
130+0.55 EUR
135+0.53 EUR
148+0.48 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7006WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
477+0.15 EUR
724+0.099 EUR
1367+0.052 EUR
1446+0.049 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7550BXTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD725C62F8FF8BF&compId=1EDN7550B.pdf?ci_sign=d62005bdf2be1827abf849df53db753bfce48e1c
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Mounting: SMD
Case: PG-SOT23-6
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Voltage class: 80V
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
75+0.96 EUR
107+0.67 EUR
112+0.64 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS1902TRPBF pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS1503TRPBF description pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4010PBF description pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092
IRFSL4010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRS2104SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFIZ24NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA3AF1A6F5005056AB5A8F&compId=irfiz24n.pdf?ci_sign=ea6efa5688af3fcfb95c043bff4479f4f56c09fc
IRFIZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
53+1.37 EUR
83+0.87 EUR
88+0.82 EUR
100+0.79 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 13725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
481+0.15 EUR
601+0.12 EUR
667+0.11 EUR
769+0.093 EUR
1690+0.042 EUR
1793+0.04 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R099C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db
IPB65R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPI65R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8EF625A16D1BF&compId=IPI65R099C6-DTE.pdf?ci_sign=b7ecdbd0817188c32fbc3bd9e75ec036c5cb4a3a
IPI65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB914862BA111BF&compId=IPL65R099C7-DTE.pdf?ci_sign=6b815f4bb7536f080aad6f5d4850b9f64b26de1b
IPL65R099C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPP65R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB944D4022D91BF&compId=IPP65R099C6-DTE.pdf?ci_sign=59108e7d9ce3a0b6f5caf391c2a545255e688e7a
IPP65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
auf Bestellung 4195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
309+0.23 EUR
385+0.19 EUR
468+0.15 EUR
562+0.13 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BAT6406WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward impulse current: 0.8A
auf Bestellung 10240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
782+0.092 EUR
848+0.084 EUR
Mindestbestellmenge: 264
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11.4...18V DC
Output current: -7...2A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
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BAS7004WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7004WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward impulse current: 0.1A
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
400+0.18 EUR
542+0.13 EUR
966+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7734TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5
IRFS7734TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
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IKW25N120CS7XKSA1 Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 38ns
Turn-off time: 490ns
Produkt ist nicht verfügbar
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IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 56A
Pulsed collector current: 120A
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPP114N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7F60E098411C&compId=IPP114N12N3G-DTE.pdf?ci_sign=3f321fd03aadd96b8be5a2518eadab640e500888
IPP114N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 22
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IRS2184STRPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
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IRS2453DSTRPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7ED3F1A6F5005056AB5A8F&compId=irs2453d.pdf?ci_sign=d32bc0a67105279d411e7001c66a71b342acb3d4
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IR21094STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Power: 1W
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
44+1.63 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 34
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BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
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FM24CL64B-DGTR Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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S29AL008J55TFIR23 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29GL256S10DHA020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHIV23 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHV010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHV020 FASLS03740-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10DHV023 download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10FHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Access time: 100ns
Produkt ist nicht verfügbar
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY15B204QN-40SXE
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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CY15B204QN-40SXET
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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S29GL01GT11DHIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
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S29GL01GT11DHIV23 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
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S29GL01GT11DHV023 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
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S29GL01GT11FHIV23 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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