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S26HL512TFPBHM010 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 166MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL512TFPBHM013 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 166MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HS512TGABHI000 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HS512TGABHI010 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HS512TGABHM010 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KL128SDABHB023 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26KL128SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KL256SDABHB020 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KL256SDABHB023 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26KL256SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 256Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KL512SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KL512SDABHI030 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KL512SDABHV023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26KS128SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26KS128SDPBHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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BC848CE6433HTMA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
20000+0.048 EUR
Mindestbestellmenge: 20000
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IPD70R360P7SAUMA1 IPD70R360P7SAUMA1 INFINEON TECHNOLOGIES IPD70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1429 Stücke:
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53+1.36 EUR
71+1.02 EUR
88+0.82 EUR
112+0.64 EUR
118+0.61 EUR
Mindestbestellmenge: 53
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IRFP90N20DPBF IRFP90N20DPBF INFINEON TECHNOLOGIES irfp90n20d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
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4+17.88 EUR
Mindestbestellmenge: 4
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AUIRF7342QTR AUIRF7342QTR INFINEON TECHNOLOGIES auirf7342q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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SGW50N60HS SGW50N60HS INFINEON TECHNOLOGIES SGW50N60HS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IR2010STRPBF IR2010STRPBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: SO16
auf Bestellung 948 Stücke:
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21+3.45 EUR
27+2.67 EUR
Mindestbestellmenge: 21
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IR2011SPBF IR2011SPBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: SO8
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47+1.53 EUR
51+1.42 EUR
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: DIP14
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
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14+5.46 EUR
15+4.82 EUR
Mindestbestellmenge: 14
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IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Case: SO8
Produkt ist nicht verfügbar
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IR2010SPBF IR2010SPBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: SO16
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: DIP8
Produkt ist nicht verfügbar
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AUIR2085STR AUIR2085STR INFINEON TECHNOLOGIES auir2085s.pdf?fileId=5546d462533600a4015355a82609133f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Topology: MOSFET half-bridge
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Case: SO8
Produkt ist nicht verfügbar
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S29AL008J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Mounting: SMD
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 55ns
Memory: 8Mb FLASH
Case: VFBGA48
Interface: CFI; parallel
Produkt ist nicht verfügbar
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BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES BCR166.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 160MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 336 Stücke:
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179+0.4 EUR
285+0.25 EUR
336+0.21 EUR
Mindestbestellmenge: 179
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BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES BCR162.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES BSP316PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
177+0.41 EUR
204+0.35 EUR
227+0.32 EUR
230+0.31 EUR
Mindestbestellmenge: 143
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BCR191E6327 BCR191E6327 INFINEON TECHNOLOGIES BCR191.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N135R3FKSA1 IHW30N135R3FKSA1 INFINEON TECHNOLOGIES DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 INFINEON TECHNOLOGIES BSC123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Kind of channel: enhancement
Case: PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
On-state resistance: 12.3mΩ
Gate-source voltage: ±20V
Drain current: 55A
Power dissipation: 66W
Drain-source voltage: 80V
auf Bestellung 3152 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
98+0.73 EUR
106+0.68 EUR
112+0.64 EUR
119+0.6 EUR
250+0.56 EUR
500+0.52 EUR
1000+0.49 EUR
2500+0.42 EUR
Mindestbestellmenge: 81
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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
91+0.79 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
DD180N20SHPSA1 INFINEON TECHNOLOGIES DD180N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw
Case: BG-PB34SB-1
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: double series
Max. forward voltage: 1.39V
Type of semiconductor module: diode
Load current: 226A
Max. off-state voltage: 2kV
Max. forward impulse current: 5.75kA
Produkt ist nicht verfügbar
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T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Max. load current: 7kA
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
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TT160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HL512TFPBHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 166MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HL512TFPBHM013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 166MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HS512TGABHI000 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HS512TGABHI010 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HS512TGABHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Case: BGA24
Operating frequency: 200MHz
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL128SDABHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL128SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL256SDABHB020
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL256SDABHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL256SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 256Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL512SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL512SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KL512SDABHV023 download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 100MHz
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KS128SDPBHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Case: FBGA24
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC848CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20000+0.048 EUR
Mindestbestellmenge: 20000
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R360P7SAUMA1 IPD70R360P7S.pdf
IPD70R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
71+1.02 EUR
88+0.82 EUR
112+0.64 EUR
118+0.61 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRFP90N20DPBF irfp90n20d.pdf
IRFP90N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7342QTR auirf7342q.pdf
AUIRF7342QTR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGW50N60HS SGW50N60HS.pdf
SGW50N60HS
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IR2010STRPBF IR2010SPBF.pdf
IR2010STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: SO16
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
27+2.67 EUR
Mindestbestellmenge: 21
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IR2011SPBF description IR2011SPBF.pdf
IR2011SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: SO8
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
51+1.42 EUR
Mindestbestellmenge: 47
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IR2010PBF IR2010SPBF.pdf
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: DIP14
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.46 EUR
15+4.82 EUR
Mindestbestellmenge: 14
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IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Case: SO8
Produkt ist nicht verfügbar
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IR2010SPBF IR2010SPBF.pdf
IR2010SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: SO16
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Case: DIP8
Produkt ist nicht verfügbar
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AUIR2085STR auir2085s.pdf?fileId=5546d462533600a4015355a82609133f
AUIR2085STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: reel; tape
Topology: MOSFET half-bridge
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Case: SO8
Produkt ist nicht verfügbar
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S29AL008J55BFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Mounting: SMD
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 55ns
Memory: 8Mb FLASH
Case: VFBGA48
Interface: CFI; parallel
Produkt ist nicht verfügbar
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BCR166E6327 BCR166.pdf
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 160MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
285+0.25 EUR
336+0.21 EUR
Mindestbestellmenge: 179
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BCR162E6327 BCR162.pdf
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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BSP316PH6327XTSA1 BSP316PH6327XTSA1-dte.pdf
BSP316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
177+0.41 EUR
204+0.35 EUR
227+0.32 EUR
230+0.31 EUR
Mindestbestellmenge: 143
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BCR191E6327 BCR191.pdf
BCR191E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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IHW30N135R3FKSA1 DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88
IHW30N135R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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BSC123N08NS3GATMA1 BSC123N08NS3G-DTE.pdf
BSC123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Kind of channel: enhancement
Case: PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
On-state resistance: 12.3mΩ
Gate-source voltage: ±20V
Drain current: 55A
Power dissipation: 66W
Drain-source voltage: 80V
auf Bestellung 3152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
98+0.73 EUR
106+0.68 EUR
112+0.64 EUR
119+0.6 EUR
250+0.56 EUR
500+0.52 EUR
1000+0.49 EUR
2500+0.42 EUR
Mindestbestellmenge: 81
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IRFU5305PBF description irfr5305pbf.pdf
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
91+0.79 EUR
Mindestbestellmenge: 68
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DD180N20SHPSA1 DD180N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw
Case: BG-PB34SB-1
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: double series
Max. forward voltage: 1.39V
Type of semiconductor module: diode
Load current: 226A
Max. off-state voltage: 2kV
Max. forward impulse current: 5.75kA
Produkt ist nicht verfügbar
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T3160N18TOFVTXPSA1 T3160N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Max. load current: 7kA
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
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TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
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TT160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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