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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA30C702DB42143&compId=IPB073N15N5.pdf?ci_sign=af20e0604e1889601409b069b73fbbca7c50096a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
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XMC1202T028X0064ABXUMA1 XMC1202T028X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
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AIHD10N60RATMA1 AIHD10N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA56A2D5665820&compId=AIHD10N60R.pdf?ci_sign=02febf6bcc61b28ffaa6a2d1975f89a5e580013b Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A6FF1A6F5005056AB5A8F&compId=irfs4610.pdf?ci_sign=f82b81a9499178560620d52f14838fe735b30f24 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
31+2.32 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 26
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IRFB4620PBF IRFB4620PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A7DF1A6F5005056AB5A8F&compId=irfb4620pbf.pdf?ci_sign=42d0628fba08e7dbecd4a027551ca7bbbb81baaf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
28+2.6 EUR
30+2.43 EUR
33+2.22 EUR
Mindestbestellmenge: 25
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BFP183WH6327XTSA1 BFP183WH6327XTSA1 INFINEON TECHNOLOGIES bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 65mA
Type of transistor: NPN
Power dissipation: 0.45W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 8GHz
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
382+0.19 EUR
432+0.17 EUR
468+0.15 EUR
500+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 264
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BFP196WH6327 BFP196WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D83F728EC11C&compId=BFP196WH6327-dte.pdf?ci_sign=6513198cf786f3ecf728a401abed3d957006453c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 20V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 5GHz
auf Bestellung 5753 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
197+0.36 EUR
317+0.23 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 152
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BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC244ACA589D3D7&compId=BFR181WH6327.pdf?ci_sign=73bcb88578474fc2ccb23c7942861156c0acb869 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 20mA
Type of transistor: NPN
Power dissipation: 0.175W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
258+0.28 EUR
376+0.19 EUR
435+0.16 EUR
506+0.14 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 173
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SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74363D64915EA&compId=SPP04N80C3.pdf?ci_sign=634f55a9ae6c6b2461f8c0a2174b7a09f2113185 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
37+1.96 EUR
43+1.69 EUR
45+1.6 EUR
250+1.54 EUR
Mindestbestellmenge: 33
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IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A684F93A41EC&compId=irfp7530pbf.pdf?ci_sign=9ac261215de2ad423fa2591b6c80df9d839c61a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Kind of package: tube
Gate charge: 274nC
Gate-source voltage: ±20V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.03 EUR
21+3.43 EUR
23+3.25 EUR
50+3.13 EUR
Mindestbestellmenge: 15
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BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CEBF30B5457E749&compId=BSS209PW.pdf?ci_sign=e9489374d989629f4c132f9c875b4428e0978917 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Mounting: SMD
Case: PG-SOT-323
Drain-source voltage: -20V
Drain current: -630mA
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 4054 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
491+0.15 EUR
578+0.12 EUR
738+0.097 EUR
1071+0.067 EUR
1132+0.063 EUR
Mindestbestellmenge: 334
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BSP171PH6327XTSA1 BSP171PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9213BC79B0F1CC&compId=BSP171PH6327XTSA1-dte.pdf?ci_sign=274099176c997552a32d0a5e51cc2bc110b71f8f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: PG-SOT223
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
94+0.76 EUR
135+0.53 EUR
197+0.36 EUR
215+0.33 EUR
Mindestbestellmenge: 63
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCABFEDCCB15EA&compId=IRFB7440PBF.pdf?ci_sign=e1a8189860eb004e5ec1a517ed03455a0c961fb8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
61+1.17 EUR
77+0.93 EUR
81+0.89 EUR
100+0.84 EUR
Mindestbestellmenge: 39
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IRFR4104TRPBF IRFR4104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD0D220F9975EA&compId=IRFR4104TRPBF.pdf?ci_sign=830393c4e09abe5762fb941f8c9c6d4ae5a4c9c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 1267 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
57+1.27 EUR
72+1 EUR
76+0.94 EUR
500+0.92 EUR
Mindestbestellmenge: 48
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BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Case: SC79
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 13598 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
261+0.27 EUR
307+0.23 EUR
500+0.14 EUR
848+0.084 EUR
893+0.08 EUR
Mindestbestellmenge: 179
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Kind of sensor: unipolar
Mounting: SMT
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
68+1.06 EUR
132+0.54 EUR
139+0.51 EUR
Mindestbestellmenge: 58
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TLE4935L TLE4935L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769 Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Kind of sensor: latch
Mounting: THT
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 45
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A842AAD03C310B&compId=BSS816NWH6327XTSA1.pdf?ci_sign=0330cb7ff020b4a0a3d4eb05d602d7866cbabb9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 3579 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
407+0.18 EUR
558+0.13 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 278
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Power dissipation: 0.15W
Type of diode: Schottky switching
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
155+0.46 EUR
192+0.37 EUR
Mindestbestellmenge: 155
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Case: SOT343
Frequency: 25GHz
Collector-emitter voltage: 4.5V
Current gain: 90...130
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 75mW
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Produkt ist nicht verfügbar
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IRFS4229TRLPBF IRFS4229TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C86ABB5A59F1A303005056AB0C4F&compId=irfs4229pbf.pdf?ci_sign=610a1310601004a142c32c1e433d2c89212cbf1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4321TRLPBF IRFS4321TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF51891A1A95EA&compId=IRFS4321TRLPBF.pdf?ci_sign=a2765fa9ff0e7e96465d26ae8fb10a38c345d12f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 471 Stücke:
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21+3.55 EUR
40+1.82 EUR
42+1.72 EUR
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IKW25T120FKSA1 IKW25T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44779C934C469&compId=IKW25T120.pdf?ci_sign=64fd4beb06f11287c2206cd3385a3c737cc94013 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.92 EUR
12+6.33 EUR
15+4.96 EUR
16+4.69 EUR
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PVT322PBF PVT322PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0C9ACEC8401EC&compId=pvt322.pdf?ci_sign=b9abbd52b80cec3b819c7a498466d806bbe1483b Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 3ms
Release time: 0.5ms
Produkt ist nicht verfügbar
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 143W
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
57+1.27 EUR
66+1.09 EUR
71+1.02 EUR
150+1 EUR
Mindestbestellmenge: 44
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IRFHM830TRPBF IRFHM830TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BBBE0D2352F1A303005056AB0C4F&compId=irfhm830pbf.pdf?ci_sign=7760142d87f380f048badd1b91634d932e827dd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92879E7F2651CC&compId=BSS223PWH6327XTSA1-dte.pdf?ci_sign=abe3df05106a83ed43dc0e080d91b36c045d224a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
391+0.18 EUR
455+0.16 EUR
516+0.14 EUR
589+0.12 EUR
962+0.074 EUR
1000+0.072 EUR
Mindestbestellmenge: 228
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IRFS4310TRLPBF IRFS4310TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C88B246D09F1A303005056AB0C4F&compId=irfs4310pbf.pdf?ci_sign=2ba0ed2c7db4f06ecd950a74a0a6d9e52fd245bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4615TRLPBF IRFS4615TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C919EF3AF7F1A303005056AB0C4F&compId=irfs4615pbf.pdf?ci_sign=00aacefc98a77bbdafb41717ba543c793224741a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFS7437TRLPBF IRFS7437TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
24+3.05 EUR
34+2.13 EUR
36+2 EUR
Mindestbestellmenge: 21
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IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA5EB3E6F411C&compId=IPP126N10N3G-DTE.pdf?ci_sign=35a144c2f33ca71b6a8eca3700b3927fd3fd0b32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BSC252N10NSFGATMA1 BSC252N10NSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222805218164EF1A303005056AB0C4F&compId=irlr6225pbf.pdf?ci_sign=c90e685b7210caa8a81bba363c2cbb3e203cae67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11 Stücke:
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11+6.51 EUR
Mindestbestellmenge: 11
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BFP650H6327 BFP650H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E02B6516E11C&compId=BFP650H6327-DTE.pdf?ci_sign=8ceae5c6a61797b0972337077f9ade1e60abf56c Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
Kind of transistor: RF
Frequency: 42GHz
auf Bestellung 2583 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
124+0.58 EUR
141+0.51 EUR
143+0.5 EUR
151+0.47 EUR
157+0.46 EUR
Mindestbestellmenge: 90
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IRF7410TRPBF IRF7410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7446PBF IRFB7446PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAD99D30235EA&compId=IRFB7446PBF.pdf?ci_sign=6a49d11612e82c301cf8185b0441112f35f31c0e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
64+1.13 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 39
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IRFH7440TRPBF IRFH7440TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2.4mΩ
Gate charge: 92nC
Gate-source voltage: ±20V
auf Bestellung 3341 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
46+1.59 EUR
53+1.37 EUR
55+1.3 EUR
500+1.29 EUR
1000+1.26 EUR
Mindestbestellmenge: 43
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC806F54F7411C&compId=IPP147N12N3G-DTE.pdf?ci_sign=945ce453b57d201a315496168289cae38b7ff480 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
40+1.79 EUR
Mindestbestellmenge: 39
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IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
57+1.26 EUR
86+0.83 EUR
91+0.79 EUR
500+0.78 EUR
Mindestbestellmenge: 48
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BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B75F8A79EA611C&compId=BSP135H6327XTSA1.pdf?ci_sign=b914401dd26fa7619fb03c1cf6bf9912261be089 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Case: SOT223
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
57+1.26 EUR
117+0.61 EUR
124+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 39
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Produkt ist nicht verfügbar
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Case: SOT323
Power dissipation: 0.15W
Type of diode: Schottky switching
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
714+0.1 EUR
Mindestbestellmenge: 714
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 11.5...16.6V DC
Power: 1.4W
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Number of channels: 2
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Topology: MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5 Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Supply voltage: 1.65...3.4V DC
Type of integrated circuit: RF switch
Number of channels: 2
Bandwidth: 0.1...6GHz
Application: telecommunication
Mounting: SMD
Case: ATSLP-10-2
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
Mindestbestellmenge: 66
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BAT6405WH6327XTSA1 BAT6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.8A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
407+0.18 EUR
521+0.14 EUR
582+0.12 EUR
807+0.089 EUR
863+0.083 EUR
Mindestbestellmenge: 250
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 68nC
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.9 EUR
20+3.75 EUR
21+3.55 EUR
Mindestbestellmenge: 15
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES 1ED020I12-F_Ver2.3_May2011.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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BFP640H6327XTSA1 BFP640H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5DD820&compId=Infineon-BFP640-DS-v03_00-EN.pdf?ci_sign=8598667148023825c70ff370d5b13105b6eb907b Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 4.1V
Current gain: 110...270
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 2815 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
145+0.49 EUR
182+0.39 EUR
243+0.3 EUR
257+0.28 EUR
Mindestbestellmenge: 114
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90FA0EABC59E80D3&compId=BFP760.pdf?ci_sign=1929f603bc546f8a545134befdd1ff3f3e6f452c Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2171 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
242+0.3 EUR
262+0.27 EUR
Mindestbestellmenge: 173
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IPP039N04LGXKSA1 IPP039N04LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E969F612F1E11C&compId=IPP039N04LG-DTE.pdf?ci_sign=1ab9746543755d577d3301e9081234380060d3de Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
63+1.14 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFR8314TRPBF IRFR8314TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEE6ACC2908143&compId=IRFR8314TRPBF.pdf?ci_sign=62635df23b932e52fbdf293ba7105247b029c798 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 127A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2134 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
49+1.48 EUR
85+0.85 EUR
90+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 33
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 36
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IPB073N15N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA30C702DB42143&compId=IPB073N15N5.pdf?ci_sign=af20e0604e1889601409b069b73fbbca7c50096a
IPB073N15N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1202T028X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T028X0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
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XMC1202T028X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T028X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
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AIHD10N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA56A2D5665820&compId=AIHD10N60R.pdf?ci_sign=02febf6bcc61b28ffaa6a2d1975f89a5e580013b
AIHD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IRFB4610PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A6FF1A6F5005056AB5A8F&compId=irfs4610.pdf?ci_sign=f82b81a9499178560620d52f14838fe735b30f24
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
31+2.32 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 26
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IRFB4620PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A7DF1A6F5005056AB5A8F&compId=irfb4620pbf.pdf?ci_sign=42d0628fba08e7dbecd4a027551ca7bbbb81baaf
IRFB4620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.6 EUR
30+2.43 EUR
33+2.22 EUR
Mindestbestellmenge: 25
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BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 65mA
Type of transistor: NPN
Power dissipation: 0.45W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 8GHz
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
382+0.19 EUR
432+0.17 EUR
468+0.15 EUR
500+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 264
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BFP196WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D83F728EC11C&compId=BFP196WH6327-dte.pdf?ci_sign=6513198cf786f3ecf728a401abed3d957006453c
BFP196WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 20V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 5GHz
auf Bestellung 5753 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
197+0.36 EUR
317+0.23 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 152
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BFR181WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC244ACA589D3D7&compId=BFR181WH6327.pdf?ci_sign=73bcb88578474fc2ccb23c7942861156c0acb869
BFR181WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 20mA
Type of transistor: NPN
Power dissipation: 0.175W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
258+0.28 EUR
376+0.19 EUR
435+0.16 EUR
506+0.14 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 173
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP04N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74363D64915EA&compId=SPP04N80C3.pdf?ci_sign=634f55a9ae6c6b2461f8c0a2174b7a09f2113185
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
37+1.96 EUR
43+1.69 EUR
45+1.6 EUR
250+1.54 EUR
Mindestbestellmenge: 33
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IRFB7530PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67
IRFB7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IRFP7530PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A684F93A41EC&compId=irfp7530pbf.pdf?ci_sign=9ac261215de2ad423fa2591b6c80df9d839c61a7
IRFP7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Kind of package: tube
Gate charge: 274nC
Gate-source voltage: ±20V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.03 EUR
21+3.43 EUR
23+3.25 EUR
50+3.13 EUR
Mindestbestellmenge: 15
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BSS209PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CEBF30B5457E749&compId=BSS209PW.pdf?ci_sign=e9489374d989629f4c132f9c875b4428e0978917
BSS209PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Mounting: SMD
Case: PG-SOT-323
Drain-source voltage: -20V
Drain current: -630mA
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 4054 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
491+0.15 EUR
578+0.12 EUR
738+0.097 EUR
1071+0.067 EUR
1132+0.063 EUR
Mindestbestellmenge: 334
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BSP171PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9213BC79B0F1CC&compId=BSP171PH6327XTSA1-dte.pdf?ci_sign=274099176c997552a32d0a5e51cc2bc110b71f8f
BSP171PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: PG-SOT223
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
94+0.76 EUR
135+0.53 EUR
197+0.36 EUR
215+0.33 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7440PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCABFEDCCB15EA&compId=IRFB7440PBF.pdf?ci_sign=e1a8189860eb004e5ec1a517ed03455a0c961fb8
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
61+1.17 EUR
77+0.93 EUR
81+0.89 EUR
100+0.84 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD0D220F9975EA&compId=IRFR4104TRPBF.pdf?ci_sign=830393c4e09abe5762fb941f8c9c6d4ae5a4c9c8
IRFR4104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 1267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
57+1.27 EUR
72+1 EUR
76+0.94 EUR
500+0.92 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BAT6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Case: SC79
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 13598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
307+0.23 EUR
500+0.14 EUR
848+0.084 EUR
893+0.08 EUR
Mindestbestellmenge: 179
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Kind of sensor: unipolar
Mounting: SMT
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
68+1.06 EUR
132+0.54 EUR
139+0.51 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
TLE4935L pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769
TLE4935L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Kind of sensor: latch
Mounting: THT
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BSS816NWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A842AAD03C310B&compId=BSS816NWH6327XTSA1.pdf?ci_sign=0330cb7ff020b4a0a3d4eb05d602d7866cbabb9a
BSS816NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 3579 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
407+0.18 EUR
558+0.13 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1704WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Power dissipation: 0.15W
Type of diode: Schottky switching
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
155+0.46 EUR
192+0.37 EUR
Mindestbestellmenge: 155
Im Einkaufswagen  Stück im Wert von  UAH
BFP405H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Case: SOT343
Frequency: 25GHz
Collector-emitter voltage: 4.5V
Current gain: 90...130
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 75mW
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4229TRLPBF pVersion=0046&contRep=ZT&docId=E221C86ABB5A59F1A303005056AB0C4F&compId=irfs4229pbf.pdf?ci_sign=610a1310601004a142c32c1e433d2c89212cbf1e
IRFS4229TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4321TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF51891A1A95EA&compId=IRFS4321TRLPBF.pdf?ci_sign=a2765fa9ff0e7e96465d26ae8fb10a38c345d12f
IRFS4321TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKW25T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44779C934C469&compId=IKW25T120.pdf?ci_sign=64fd4beb06f11287c2206cd3385a3c737cc94013
IKW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.92 EUR
12+6.33 EUR
15+4.96 EUR
16+4.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PVT322PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0C9ACEC8401EC&compId=pvt322.pdf?ci_sign=b9abbd52b80cec3b819c7a498466d806bbe1483b
PVT322PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 3ms
Release time: 0.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272
IRFU4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 143W
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
57+1.27 EUR
66+1.09 EUR
71+1.02 EUR
150+1 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM830TRPBF pVersion=0046&contRep=ZT&docId=E221BBBE0D2352F1A303005056AB0C4F&compId=irfhm830pbf.pdf?ci_sign=7760142d87f380f048badd1b91634d932e827dd0
IRFHM830TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS223PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92879E7F2651CC&compId=BSS223PWH6327XTSA1-dte.pdf?ci_sign=abe3df05106a83ed43dc0e080d91b36c045d224a
BSS223PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
391+0.18 EUR
455+0.16 EUR
516+0.14 EUR
589+0.12 EUR
962+0.074 EUR
1000+0.072 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4310TRLPBF pVersion=0046&contRep=ZT&docId=E221C88B246D09F1A303005056AB0C4F&compId=irfs4310pbf.pdf?ci_sign=2ba0ed2c7db4f06ecd950a74a0a6d9e52fd245bf
IRFS4310TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4615TRLPBF pVersion=0046&contRep=ZT&docId=E221C919EF3AF7F1A303005056AB0C4F&compId=irfs4615pbf.pdf?ci_sign=00aacefc98a77bbdafb41717ba543c793224741a
IRFS4615TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7437TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf
IRFS7437TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
24+3.05 EUR
34+2.13 EUR
36+2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPP126N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA5EB3E6F411C&compId=IPP126N10N3G-DTE.pdf?ci_sign=35a144c2f33ca71b6a8eca3700b3927fd3fd0b32
IPP126N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC252N10NSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22
BSC252N10NSFGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR6225TRPBF pVersion=0046&contRep=ZT&docId=E222805218164EF1A303005056AB0C4F&compId=irlr6225pbf.pdf?ci_sign=c90e685b7210caa8a81bba363c2cbb3e203cae67
IRLR6225TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BFP650H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E02B6516E11C&compId=BFP650H6327-DTE.pdf?ci_sign=8ceae5c6a61797b0972337077f9ade1e60abf56c
BFP650H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
Kind of transistor: RF
Frequency: 42GHz
auf Bestellung 2583 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
124+0.58 EUR
141+0.51 EUR
143+0.5 EUR
151+0.47 EUR
157+0.46 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IRF7410TRPBF pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801
IRF7410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7446PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAD99D30235EA&compId=IRFB7446PBF.pdf?ci_sign=6a49d11612e82c301cf8185b0441112f35f31c0e
IRFB7446PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
64+1.13 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7440TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6
IRFH7440TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2.4mΩ
Gate charge: 92nC
Gate-source voltage: ±20V
auf Bestellung 3341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
46+1.59 EUR
53+1.37 EUR
55+1.3 EUR
500+1.29 EUR
1000+1.26 EUR
Mindestbestellmenge: 43
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IPP147N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC806F54F7411C&compId=IPP147N12N3G-DTE.pdf?ci_sign=945ce453b57d201a315496168289cae38b7ff480
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
40+1.79 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF7832TRPBF description pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8
IRF7832TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
57+1.26 EUR
86+0.83 EUR
91+0.79 EUR
500+0.78 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B75F8A79EA611C&compId=BSP135H6327XTSA1.pdf?ci_sign=b914401dd26fa7619fb03c1cf6bf9912261be089
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Case: SOT223
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
57+1.26 EUR
117+0.61 EUR
124+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2101SPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1705WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1705WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Case: SOT323
Power dissipation: 0.15W
Type of diode: Schottky switching
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
714+0.1 EUR
Mindestbestellmenge: 714
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS5703TRPBF pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 11.5...16.6V DC
Power: 1.4W
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Number of channels: 2
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Topology: MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX22G2A10E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5
BGSX22G2A10E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Supply voltage: 1.65...3.4V DC
Type of integrated circuit: RF switch
Number of channels: 2
Bandwidth: 0.1...6GHz
Application: telecommunication
Mounting: SMD
Case: ATSLP-10-2
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.8A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
407+0.18 EUR
521+0.14 EUR
582+0.12 EUR
807+0.089 EUR
863+0.083 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IRF4104PBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4
IRF4104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 68nC
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12F2XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe
1ED020I12F2XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.9 EUR
20+3.75 EUR
21+3.55 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FXUMA2 1ED020I12-F_Ver2.3_May2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP640H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5DD820&compId=Infineon-BFP640-DS-v03_00-EN.pdf?ci_sign=8598667148023825c70ff370d5b13105b6eb907b
BFP640H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 4.1V
Current gain: 110...270
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 2815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
145+0.49 EUR
182+0.39 EUR
243+0.3 EUR
257+0.28 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
BFP760H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90FA0EABC59E80D3&compId=BFP760.pdf?ci_sign=1929f603bc546f8a545134befdd1ff3f3e6f452c
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
242+0.3 EUR
262+0.27 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
IPP039N04LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E969F612F1E11C&compId=IPP039N04LG-DTE.pdf?ci_sign=1ab9746543755d577d3301e9081234380060d3de
IPP039N04LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
63+1.14 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFR8314TRPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEE6ACC2908143&compId=IRFR8314TRPBF.pdf?ci_sign=62635df23b932e52fbdf293ba7105247b029c798
IRFR8314TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 127A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
49+1.48 EUR
85+0.85 EUR
90+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R900P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
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