Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148866) > Seite 2481 nach 2482

Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 496 744 992 1240 1488 1736 1984 2232 2476 2477 2478 2479 2480 2481 2482  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BSC097N06NSATMA1 BSC097N06NSATMA1 INFINEON TECHNOLOGIES BSC097N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 46A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB38N20DPBF IRFB38N20DPBF INFINEON TECHNOLOGIES irfs38n20d.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.56 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPB039N10N3GATMA1 IPB039N10N3GATMA1 INFINEON TECHNOLOGIES IPB039N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STT1400N16P55XPSA1 INFINEON TECHNOLOGIES STT1400N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 1.4kA; BG-PS55-1; Ufmax: 1.39V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 1.4kA
Case: BG-PS55-1
Max. forward voltage: 1.39V
Max. forward impulse current: 9kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21824S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2182S06FXUMA1 2ED2182S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21834S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2183-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d765b229f7 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP61H6327XTSA1 BSP61H6327XTSA1 INFINEON TECHNOLOGIES BSP61H6327XTSA1.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW16N50C3FKSA1 INFINEON TECHNOLOGIES SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
60+2.00 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES IRL1404STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL1404ZSTRL AUIRL1404ZSTRL INFINEON TECHNOLOGIES auirl1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2213SPBF IR2213SPBF INFINEON TECHNOLOGIES IR2213PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO16
Power: 1.25W
Supply voltage: 12...20V DC
Turn-on time: 280ns
Turn-off time: 225ns
Output current: -2...1.7A
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2213STRPBF INFINEON TECHNOLOGIES ir2213.pdf?fileId=5546d462533600a4015355c9621716d8 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+5.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062GE30-10BGXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062G30-10BGXI INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062G30-10BGXIT INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062GE30-10BGXI INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B064PA-SFXI INFINEON TECHNOLOGIES ?docID=49685 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 64kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101I-SFXIT INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101J2-SXI INFINEON TECHNOLOGIES Infineon-CY14C101I_CY14B101I_CY14E101I_1-Mbit_(128_K_8)_Serial_(I2C)_nvSRAM_with_Real_Time_Clock-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfe05a3466 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101J2-SXIT INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101PA-SFXIT INFINEON TECHNOLOGIES Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2-LHXI INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: DFN8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2-LHXIT INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: DFN8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2A-SXI INFINEON TECHNOLOGIES Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2A-SXIT INFINEON TECHNOLOGIES Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B256PA-SFXI INFINEON TECHNOLOGIES Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B512Q2A-SXIT INFINEON TECHNOLOGIES Infineon-CY14C512Q_CY14B512Q_CY14E512Q_512_KBIT_(64K_X_8)_SPI_NVSRAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0075c348e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial
Memory: 512kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14E101J2-SXI INFINEON TECHNOLOGIES ?docID=46794 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14E256Q5A-SXQ INFINEON TECHNOLOGIES Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial
Memory: 256kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101Q3-SFXI INFINEON TECHNOLOGIES Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-BK108XI INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-SE108XI INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-BK108XIT INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-SE108XIT INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 INFINEON TECHNOLOGIES BSZ018NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
77+0.93 EUR
81+0.89 EUR
100+0.86 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES irf9952pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 INFINEON TECHNOLOGIES BSF030NE2LQ-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2304STRPBF INFINEON TECHNOLOGIES irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 127500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Max. forward voltage: 2V
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Technology: CoolSiC™ 5G; SiC
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G65C5 INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Max. forward voltage: 1.8V
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Technology: CoolSiC™ 5G; SiC
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC112N06LDATMA1 INFINEON TECHNOLOGIES Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.68 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FP50R06W2E3B11BOMA1 INFINEON TECHNOLOGIES FP50R06W2E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP25R12W1T7B11BPSA1 INFINEON TECHNOLOGIES FP25R12W1T7_B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFF600B12ME4PB11BPSA1 INFINEON TECHNOLOGIES IFF600B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFF450B12ME4PB11BPSA1 INFINEON TECHNOLOGIES IFF450B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF900R12ME7PB11BPSA1 INFINEON TECHNOLOGIES Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156 Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
6+316.33 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FS35R12W1T4B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS35R12W1T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0f69b3e5df7 Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
24+44.84 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES BSC039N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHS9301TRPBF IRFHS9301TRPBF INFINEON TECHNOLOGIES irfhs9301pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP752R ISP752R INFINEON TECHNOLOGIES ISP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Case: SO8
Supply voltage: 6...52V DC
auf Bestellung 2706 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
37+1.96 EUR
40+1.82 EUR
42+1.73 EUR
250+1.70 EUR
500+1.66 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BSP752T BSP752T INFINEON TECHNOLOGIES BSP752T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES IRLS3034TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLS3034 INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 108nC
On-state resistance: 1.7mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFIV10 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFIV20 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFV010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFV020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T560N18TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC097N06NSATMA1 BSC097N06NS-DTE.pdf
BSC097N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 46A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB38N20DPBF description irfs38n20d.pdf
IRFB38N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPB039N10N3GATMA1 IPB039N10N3G-DTE.pdf
IPB039N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STT1400N16P55XPSA1 STT1400N16P55.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 1.4kA; BG-PS55-1; Ufmax: 1.39V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 1.4kA
Case: BG-PS55-1
Max. forward voltage: 1.39V
Max. forward impulse current: 9kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21824S06JXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2182S06FXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED2182S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21834S06JXUMA1 Infineon-2ED2183-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d765b229f7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP61H6327XTSA1 BSP61H6327XTSA1.pdf
BSP61H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW16N50C3FKSA1 SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+2.00 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRL1404STRLPBF IRL1404STRLPBF.pdf
IRL1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL1404ZSTRL auirl1404s.pdf
AUIRL1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2213SPBF IR2213PBF.pdf
IR2213SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO16
Power: 1.25W
Supply voltage: 12...20V DC
Turn-on time: 280ns
Turn-off time: 225ns
Output current: -2...1.7A
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2213STRPBF ir2213.pdf?fileId=5546d462533600a4015355c9621716d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+5.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062GE30-10BGXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062G30-10BGXI Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062G30-10BGXIT Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1062GE30-10BGXI Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B064PA-SFXI ?docID=49685
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 64kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101I-SFXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101J2-SXI Infineon-CY14C101I_CY14B101I_CY14E101I_1-Mbit_(128_K_8)_Serial_(I2C)_nvSRAM_with_Real_Time_Clock-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfe05a3466
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101J2-SXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101PA-SFXIT Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2-LHXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: DFN8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2-LHXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: DFN8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2A-SXI Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B101Q2A-SXIT Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B256PA-SFXI Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14B512Q2A-SXIT Infineon-CY14C512Q_CY14B512Q_CY14E512Q_512_KBIT_(64K_X_8)_SPI_NVSRAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0075c348e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial
Memory: 512kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14E101J2-SXI ?docID=46794
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14E256Q5A-SXQ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial
Memory: 256kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101Q3-SFXI Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-BK108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-SE108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-BK108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-SE108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSATMA1 BSZ018NE2LS-DTE.pdf
BSZ018NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
77+0.93 EUR
81+0.89 EUR
100+0.86 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBF irf9952pbf.pdf
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSF030NE2LQXUMA1 BSF030NE2LQ-DTE.pdf
BSF030NE2LQXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2304STRPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 127500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G120C5XTMA1 Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Max. forward voltage: 2V
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Technology: CoolSiC™ 5G; SiC
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Max. forward voltage: 1.8V
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Technology: CoolSiC™ 5G; SiC
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FP50R06W2E3B11BOMA1 FP50R06W2E3B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP25R12W1T7B11BPSA1 FP25R12W1T7_B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFF600B12ME4PB11BPSA1 IFF600B12ME4PB11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFF450B12ME4PB11BPSA1 IFF450B12ME4PB11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF900R12ME7PB11BPSA1 Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+316.33 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FS35R12W1T4B11BOMA1 Infineon-FS35R12W1T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0f69b3e5df7
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+44.84 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NS BSC039N06NS-DTE.pdf
BSC039N06NS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHS9301TRPBF irfhs9301pbf.pdf
IRFHS9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP752R ISP752R.pdf
ISP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Case: SO8
Supply voltage: 6...52V DC
auf Bestellung 2706 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
37+1.96 EUR
40+1.82 EUR
42+1.73 EUR
250+1.70 EUR
500+1.66 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BSP752T BSP752T.pdf
BSP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3034TRLPBF IRLS3034TRLPBF.pdf
IRLS3034TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLS3034 AUIRLS3034.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 108nC
On-state resistance: 1.7mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFIV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T11TFV020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T560N18TOFXPSA1 T560N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 496 744 992 1240 1488 1736 1984 2232 2476 2477 2478 2479 2480 2481 2482  [ Nächste Seite >> ]