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CY7C2263KV18-550BZXI INFINEON TECHNOLOGIES Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; FBGA165; parallel; -40÷85°C
Case: FBGA165
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Memory: 36Mb SRAM
Frequency: 550MHz
Memory organisation: 2Mx18bit
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TLF35584QVHS1XUMA1 INFINEON TECHNOLOGIES Infineon-TLF35584QVHSx-product-overview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce1408601c29 Category: Voltage regulators - DC/DC circuits
Description: TLF35584QVHS1XUMA1
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2500+5.59 EUR
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BSC030N04NSGATMA1 BSC030N04NSGATMA1 INFINEON TECHNOLOGIES BSC030N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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114+0.63 EUR
122+0.59 EUR
129+0.56 EUR
143+0.5 EUR
177+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
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IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES irlml2246pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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F3L300R07PE4 F3L300R07PE4 INFINEON TECHNOLOGIES F3L300R07PE4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Technology: EconoPACK™ 4
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Pulsed collector current: 600A
Power dissipation: 940W
Case: AG-ECONO4-1
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
auf Bestellung 6 Stücke:
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1+292.15 EUR
3+257.4 EUR
6+216.22 EUR
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AIHD06N60RATMA1 AIHD06N60RATMA1 INFINEON TECHNOLOGIES AIHD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Mounting: SMD
Case: DPAK
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Type of transistor: IGBT
Collector-emitter voltage: 600V
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-on time: 19ns
Gate charge: 48nC
Turn-off time: 279ns
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AIHD06N60RFATMA1 AIHD06N60RFATMA1 INFINEON TECHNOLOGIES Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Mounting: SMD
Case: DPAK
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Type of transistor: IGBT
Collector-emitter voltage: 600V
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Turn-on time: 16ns
Gate charge: 48nC
Turn-off time: 127ns
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FS200R12KT4RB11BOSA1 INFINEON TECHNOLOGIES Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 1kW
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Collector current: 200A
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Technology: EconoPACK™ 3
Produkt ist nicht verfügbar
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FS200R12PT4BOSA1 INFINEON TECHNOLOGIES Infineon-FS200R12PT4-DS-v02_02-en_de.pdf?fileId=db3a30432239cccd01230df5d3f555e9 Category: IGBT modules
Description: Module: IGBT; Ic: 280A; THT; THT
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TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
auf Bestellung 367 Stücke:
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43+1.7 EUR
46+1.57 EUR
73+0.99 EUR
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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 334 Stücke:
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148+0.49 EUR
186+0.38 EUR
201+0.36 EUR
205+0.35 EUR
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 636 Stücke:
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99+0.73 EUR
111+0.65 EUR
116+0.62 EUR
120+0.6 EUR
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TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2519 Stücke:
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53+1.37 EUR
72+1 EUR
101+0.71 EUR
1000+0.57 EUR
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BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 INFINEON TECHNOLOGIES BSC360N15NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
On-state resistance: 36mΩ
Drain current: 33A
Power dissipation: 74W
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPB060N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 136A; 250W; TO263-7
Case: TO263-7
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 68nC
On-state resistance: 4.8mΩ
Drain current: 136A
Power dissipation: 250W
Drain-source voltage: 150V
Kind of channel: enhancement
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BSC160N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 56A; 96W; PG-TDSON-8; SMT
Case: PG-TDSON-8
Mounting: SMD
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Technology: OptiMOS™ 5
Gate charge: 19nC
On-state resistance: 16mΩ
Drain current: 56A
Power dissipation: 96W
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 6000 Stücke:
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5000+1.46 EUR
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EUTBSC360N15NS3GATMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: EUTBSC360N15NS3GATMA1
auf Bestellung 5000 Stücke:
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5000+0.7 EUR
Mindestbestellmenge: 5000
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IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES irfts8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1015 Stücke:
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167+0.43 EUR
211+0.34 EUR
240+0.3 EUR
355+0.2 EUR
404+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 167
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES IPA80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 61 Stücke:
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44+1.66 EUR
55+1.3 EUR
61+1.17 EUR
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IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES IPD80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2478 Stücke:
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41+1.77 EUR
62+1.16 EUR
71+1.02 EUR
100+0.82 EUR
500+0.71 EUR
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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES infineon-ips80r900p7-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES IPU80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
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49+1.47 EUR
59+1.22 EUR
75+1.01 EUR
150+0.93 EUR
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES IPN80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
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IRFP9140NPBF IRFP9140NPBF INFINEON TECHNOLOGIES irfp9140n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 560 Stücke:
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26+2.8 EUR
44+1.64 EUR
48+1.52 EUR
51+1.42 EUR
100+1.32 EUR
125+1.27 EUR
250+1.17 EUR
500+1.07 EUR
Mindestbestellmenge: 26
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IPD200N15N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
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IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES irf3805.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 69 Stücke:
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21+3.49 EUR
31+2.32 EUR
50+2.07 EUR
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES IRF300P226.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
Produkt ist nicht verfügbar
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IRF3007STRLPBF INFINEON TECHNOLOGIES irf3007spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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IRF3805STRLPBF INFINEON TECHNOLOGIES irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES IRF300P227.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES irf3315spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES irf3415spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES IRF3610STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF INFINEON TECHNOLOGIES irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Produkt ist nicht verfügbar
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IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES irf3805s-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
73+0.99 EUR
99+0.72 EUR
112+0.64 EUR
200+0.57 EUR
250+0.55 EUR
Mindestbestellmenge: 48
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES IRFR3710ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
44+1.65 EUR
49+1.48 EUR
57+1.26 EUR
65+1.12 EUR
100+1 EUR
250+0.87 EUR
500+0.79 EUR
1000+0.73 EUR
Mindestbestellmenge: 37
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IRFR4104TRPBF IRFR4104TRPBF INFINEON TECHNOLOGIES IRFR4104TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1099 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
77+0.93 EUR
Mindestbestellmenge: 60
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IRFR7546TRPBF IRFR7546TRPBF INFINEON TECHNOLOGIES IRFR7546TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1277 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
81+0.89 EUR
120+0.6 EUR
250+0.52 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES irfs3307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.4 EUR
Mindestbestellmenge: 21
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IRFR3709ZTRPBF IRFR3709ZTRPBF INFINEON TECHNOLOGIES IRFR3709ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRRPBF IRFR3709ZTRRPBF INFINEON TECHNOLOGIES irfr3709zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 INFINEON TECHNOLOGIES BSC059N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9388TRPBF INFINEON TECHNOLOGIES irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES irf9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
Mindestbestellmenge: 30
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Drain-source voltage: 60V
Application: automotive industry
Case: SOT23
Produkt ist nicht verfügbar
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES BSP89H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain current: 0.35A
Power dissipation: 1.8W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
175+0.41 EUR
198+0.36 EUR
Mindestbestellmenge: 143
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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BSC057N08NS3GATMA1 BSC057N08NS3GATMA1 INFINEON TECHNOLOGIES BSC057N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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6EDL04I06PTXUMA1 INFINEON TECHNOLOGIES 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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6EDL04N02PR 6EDL04N02PR INFINEON TECHNOLOGIES 6EDL04N02PR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...17.5V
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 INFINEON TECHNOLOGIES Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
3+216.32 EUR
Mindestbestellmenge: 3
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IPB018N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.3 EUR
Mindestbestellmenge: 800
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IPD028N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD028N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8386267f0183a84489a82df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 139A; 150W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 139A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 102nC
Kind of channel: enhancement
Technology: SiC
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.73 EUR
Mindestbestellmenge: 2000
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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CY7C2263KV18-550BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; FBGA165; parallel; -40÷85°C
Case: FBGA165
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Memory: 36Mb SRAM
Frequency: 550MHz
Memory organisation: 2Mx18bit
Produkt ist nicht verfügbar
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TLF35584QVHS1XUMA1 Infineon-TLF35584QVHSx-product-overview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce1408601c29
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: TLF35584QVHS1XUMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+5.59 EUR
Mindestbestellmenge: 2500
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BSC030N04NSGATMA1 BSC030N04NSG-DTE.pdf
BSC030N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
122+0.59 EUR
129+0.56 EUR
143+0.5 EUR
177+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 114
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IRLML2246TRPBF irlml2246pbf.pdf
IRLML2246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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F3L300R07PE4 F3L300R07PE4.pdf
F3L300R07PE4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Technology: EconoPACK™ 4
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Pulsed collector current: 600A
Power dissipation: 940W
Case: AG-ECONO4-1
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+292.15 EUR
3+257.4 EUR
6+216.22 EUR
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AIHD06N60RATMA1 AIHD06N60R.pdf
AIHD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Mounting: SMD
Case: DPAK
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Type of transistor: IGBT
Collector-emitter voltage: 600V
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-on time: 19ns
Gate charge: 48nC
Turn-off time: 279ns
Produkt ist nicht verfügbar
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AIHD06N60RFATMA1
AIHD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Mounting: SMD
Case: DPAK
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Type of transistor: IGBT
Collector-emitter voltage: 600V
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Turn-on time: 16ns
Gate charge: 48nC
Turn-off time: 127ns
Produkt ist nicht verfügbar
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FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 1kW
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Collector current: 200A
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Technology: EconoPACK™ 3
Produkt ist nicht verfügbar
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FS200R12PT4BOSA1 Infineon-FS200R12PT4-DS-v02_02-en_de.pdf?fileId=db3a30432239cccd01230df5d3f555e9
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 280A; THT; THT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
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TLE4945L TLE49x5L.PDF
TLE4945L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
46+1.57 EUR
73+0.99 EUR
Mindestbestellmenge: 43
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
186+0.38 EUR
201+0.36 EUR
205+0.35 EUR
Mindestbestellmenge: 148
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
111+0.65 EUR
116+0.62 EUR
120+0.6 EUR
Mindestbestellmenge: 99
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TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2519 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
72+1 EUR
101+0.71 EUR
1000+0.57 EUR
Mindestbestellmenge: 53
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BSC360N15NS3GATMA1 BSC360N15NS3G-DTE.pdf
BSC360N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
On-state resistance: 36mΩ
Drain current: 33A
Power dissipation: 74W
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB060N15N5ATMA1 Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 136A; 250W; TO263-7
Case: TO263-7
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 68nC
On-state resistance: 4.8mΩ
Drain current: 136A
Power dissipation: 250W
Drain-source voltage: 150V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 56A; 96W; PG-TDSON-8; SMT
Case: PG-TDSON-8
Mounting: SMD
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Technology: OptiMOS™ 5
Gate charge: 19nC
On-state resistance: 16mΩ
Drain current: 56A
Power dissipation: 96W
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.46 EUR
Mindestbestellmenge: 5000
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EUTBSC360N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: EUTBSC360N15NS3GATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.7 EUR
Mindestbestellmenge: 5000
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IRFTS8342TRPBF irfts8342pbf.pdf
IRFTS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
211+0.34 EUR
240+0.3 EUR
355+0.2 EUR
404+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 167
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IPA80R900P7XKSA1 IPA80R900P7.pdf
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
55+1.3 EUR
61+1.17 EUR
Mindestbestellmenge: 44
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IPD80R900P7ATMA1 IPD80R900P7.pdf
IPD80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
62+1.16 EUR
71+1.02 EUR
100+0.82 EUR
500+0.71 EUR
Mindestbestellmenge: 41
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IPS80R900P7AKMA1 infineon-ips80r900p7-datasheet-en.pdf
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R900P7AKMA1 IPU80R900P7.pdf
IPU80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
59+1.22 EUR
75+1.01 EUR
150+0.93 EUR
Mindestbestellmenge: 49
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IPN80R900P7ATMA1 IPN80R900P7.pdf
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFP9140NPBF irfp9140n.pdf
IRFP9140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
44+1.64 EUR
48+1.52 EUR
51+1.42 EUR
100+1.32 EUR
125+1.27 EUR
250+1.17 EUR
500+1.07 EUR
Mindestbestellmenge: 26
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IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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IRF3805PBF irf3805.pdf
IRF3805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
31+2.32 EUR
50+2.07 EUR
Mindestbestellmenge: 21
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IRF300P226 IRF300P226.pdf
IRF300P226
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
Produkt ist nicht verfügbar
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IRF3007STRLPBF irf3007spbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF300P227 IRF300P227.pdf
IRF300P227
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
Produkt ist nicht verfügbar
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IRF3315STRLPBF irf3315spbf.pdf
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415STRLPBF irf3415spbf.pdf
IRF3415STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF IRF3610STRLPBF.pdf
IRF3610STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Produkt ist nicht verfügbar
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IRF3805STRL-7PP irf3805s-7ppbf.pdf
IRF3805STRL-7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR9120NTRPBF description irfr9120npbf.pdf
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
73+0.99 EUR
99+0.72 EUR
112+0.64 EUR
200+0.57 EUR
250+0.55 EUR
Mindestbestellmenge: 48
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IRFR3710ZTRPBF IRFR3710ZTRPBF.pdf
IRFR3710ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
44+1.65 EUR
49+1.48 EUR
57+1.26 EUR
65+1.12 EUR
100+1 EUR
250+0.87 EUR
500+0.79 EUR
1000+0.73 EUR
Mindestbestellmenge: 37
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IRFR4104TRPBF IRFR4104TRPBF.pdf
IRFR4104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1099 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
77+0.93 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7546TRPBF IRFR7546TRPBF.pdf
IRFR7546TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
81+0.89 EUR
120+0.6 EUR
250+0.52 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 60
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IRFB3307PBF irfs3307.pdf
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
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IRFR3709ZTRPBF IRFR3709ZTRPBF.pdf
IRFR3709ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3709ZTRRPBF irfr3709zpbf.pdf
IRFR3709ZTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1.pdf
BSC059N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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IRF9310TRPBF irf9310pbf.pdf
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
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IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Drain-source voltage: 60V
Application: automotive industry
Case: SOT23
Produkt ist nicht verfügbar
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BSP89H6327XTSA1 BSP89H6327XTSA1.pdf
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain current: 0.35A
Power dissipation: 1.8W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
175+0.41 EUR
198+0.36 EUR
Mindestbestellmenge: 143
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IRS2005STRPBF infineon-irs2005s-m-datasheet-en.pdf
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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BSC057N08NS3GATMA1 BSC057N08NS3G-DTE.pdf
BSC057N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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6EDL04I06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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6EDL04N02PR 6EDL04N02PR.pdf
6EDL04N02PR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...17.5V
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+216.32 EUR
Mindestbestellmenge: 3
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IPB018N06NF2SATMA1 Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.3 EUR
Mindestbestellmenge: 800
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IPD028N06NF2SATMA1 Infineon-IPD028N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8386267f0183a84489a82df3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 139A; 150W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 139A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 102nC
Kind of channel: enhancement
Technology: SiC
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.73 EUR
Mindestbestellmenge: 2000
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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