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1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
28+2.56 EUR
Mindestbestellmenge: 23
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
44+1.64 EUR
51+1.42 EUR
100+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 39
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7452TRPBF IRF7452TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7451PBF IRF7451PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7451TRPBF IRF7451TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7455TRPBF IRF7455TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7457TRPBF IRF7457TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLD1314ELXUMA1 TLD1314ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.31 EUR
Mindestbestellmenge: 10
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9620822B1011C&compId=IPP052NE7N3G-DTE.pdf?ci_sign=468892a790d343bbb195f2418fb4605339d9ca3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
41+1.74 EUR
47+1.53 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 40A
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
On-state resistance: 16mΩ
Power dissipation: 63W
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 2.6mΩ
Drain current: 91A
Gate-source voltage: ±20V
Pulsed drain current: 995A
Power dissipation: 300W
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB100N10S305ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5L054ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5N040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BFR193FH6327XTSA1 INFINEON TECHNOLOGIES bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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DD340N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD340N16SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD340N18S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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BSC040N10NS5SCATMA1 INFINEON TECHNOLOGIES Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+2.56 EUR
Mindestbestellmenge: 4000
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IRF7469TRPBF IRF7469TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP111N15N3GXKSA1 IPP111N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8BEA3643E11C&compId=IPP111N15N3G-DTE.pdf?ci_sign=61da3a9c2d92c5d511a8d5d8168ea3865f37b927 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11.1mΩ
Gate-source voltage: ±20V
Drain current: 83A
Drain-source voltage: 150V
Power dissipation: 214W
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
Mindestbestellmenge: 18
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IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
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50+3.07 EUR
200+2.77 EUR
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TLE7250GVIOXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
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2500+1.76 EUR
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XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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IRS25751LTRPBF INFINEON TECHNOLOGIES irs25751lpbf.pdf?fileId=5546d462533600a40153567b31da2837 Category: Unclassified
Description: IRS25751LTRPBF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.71 EUR
Mindestbestellmenge: 3000
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IRFB4137PBF IRFB4137PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
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IPB018N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
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800+1.14 EUR
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BSS127IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
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S25FL256LAGNFM010 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL256LAGNFM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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IRF135B203 IRF135B203 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain current: 91A
Drain-source voltage: 135V
Power dissipation: 441W
Pulsed drain current: 512A
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27+2.72 EUR
50+2.36 EUR
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ISG0616N10NM5HSCATMA1 INFINEON TECHNOLOGIES Infineon-ISG0616N10NM5HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e527499b64147 Category: Transistors - Unclassified
Description: ISG0616N10NM5HSCATMA1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+3.89 EUR
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SPB20N60S5ATMA1 INFINEON TECHNOLOGIES SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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BAS4006E6327HTSA1 BAS4006E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT23
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
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BAS4006WH6327XTSA1 BAS4006WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
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BAS4006E6433HTMA1 INFINEON TECHNOLOGIES INFNS19700-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.062 EUR
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XMC4104F64K64ABXQSA1 XMC4104F64K64ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 35
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Produkt ist nicht verfügbar
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XMC4104F64K128ABXQSA1 XMC4104F64K128ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4500F100K1024ACXQSA1 XMC4500F100K1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4500E144F1024ACXQSA1 XMC4500E144F1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
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XMC4500E144X1024ACXQSA1 XMC4500E144X1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
Produkt ist nicht verfügbar
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IAUS300N10S5N014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUS300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c159b7467d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSB165N15NZ3GXUMA1 BSB165N15NZ3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB14E6620611C&compId=BSB165N15NZ3G-DTE.pdf?ci_sign=dd418a760ded1deee6217633abfb617c5e3612cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
Produkt ist nicht verfügbar
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E713E691CF1A6F5005056AB5A8F&compId=irfr5505.pdf?ci_sign=0982e56101b1ec4bf1fddcac02efbe5c3bbd2ff6 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2191 Stücke:
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53+1.37 EUR
67+1.07 EUR
79+0.91 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 53
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BTN8962TAAUMA1 BTN8962TAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9 Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Case: PG-TO263-7
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: -27...30A
Number of channels: 1
Operating voltage: 5.5...40V DC
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
Application: DC motors
Type of integrated circuit: driver
Operating temperature: -40...150°C
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13+5.52 EUR
18+4.2 EUR
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BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6AB0B73348469&compId=BCR08PNH6327.pdf?ci_sign=33c762796ef2bb8acd2b0c3413b906d9aa06ed86 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
auf Bestellung 2764 Stücke:
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365+0.2 EUR
410+0.17 EUR
465+0.15 EUR
535+0.13 EUR
Mindestbestellmenge: 365
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BCR08PNH6327XTSA1 INFINEON TECHNOLOGIES bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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3000+0.086 EUR
Mindestbestellmenge: 3000
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
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3+26.93 EUR
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BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Protection: overheating OTP
auf Bestellung 1566 Stücke:
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114+0.63 EUR
158+0.45 EUR
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IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDC30I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC30I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
28+2.56 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
1EDI05I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
44+1.64 EUR
51+1.42 EUR
100+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7452TRPBF pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657
IRF7452TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451PBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451TRPBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7455TRPBF pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc
IRF7455TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7457TRPBF pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5
IRF7457TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLD1314ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150
TLD1314ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB107N20NAATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1
IPB107N20NAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.31 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP052NE7N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9620822B1011C&compId=IPP052NE7N3G-DTE.pdf?ci_sign=468892a790d343bbb195f2418fb4605339d9ca3c
IPP052NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
41+1.74 EUR
47+1.53 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BSZ160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95
BSZ160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 40A
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
On-state resistance: 16mΩ
Power dissipation: 63W
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 2.6mΩ
Drain current: 91A
Gate-source voltage: ±20V
Pulsed drain current: 995A
Power dissipation: 300W
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a
IPB020N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8
IPB020N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N10S305ATMA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DD340N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD340N16SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD340N18S pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+2.56 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IRF7469TRPBF pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28
IRF7469TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP111N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8BEA3643E11C&compId=IPP111N15N3G-DTE.pdf?ci_sign=61da3a9c2d92c5d511a8d5d8168ea3865f37b927
IPP111N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11.1mΩ
Gate-source voltage: ±20V
Drain current: 83A
Drain-source voltage: 150V
Power dissipation: 214W
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
Mindestbestellmenge: 18
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IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.07 EUR
200+2.77 EUR
Mindestbestellmenge: 50
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TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 52500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.76 EUR
Mindestbestellmenge: 2500
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XMC4700E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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IRS25751LTRPBF irs25751lpbf.pdf?fileId=5546d462533600a40153567b31da2837
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: IRS25751LTRPBF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.71 EUR
Mindestbestellmenge: 3000
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IRFB4137PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088
IRFB4137PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB018N06NF2SATMA1 Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.14 EUR
Mindestbestellmenge: 800
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.063 EUR
Mindestbestellmenge: 3000
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S25FL256LAGNFM010 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGNFM013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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IRF135B203 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797
IRF135B203
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain current: 91A
Drain-source voltage: 135V
Power dissipation: 441W
Pulsed drain current: 512A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
27+2.72 EUR
50+2.36 EUR
Mindestbestellmenge: 23
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ISG0616N10NM5HSCATMA1 Infineon-ISG0616N10NM5HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e527499b64147
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: ISG0616N10NM5HSCATMA1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+3.89 EUR
Mindestbestellmenge: 3000
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SPB20N60S5ATMA1 SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.2 EUR
Mindestbestellmenge: 1000
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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BAS4006E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4006E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT23
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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BAS4006WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4006WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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BAS4006E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.062 EUR
Mindestbestellmenge: 10000
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XMC4104F64K64ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104F64K64ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 35
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4104F64K128ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104F64K128ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4500F100K1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100K1024ACXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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XMC4500E144F1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500E144F1024ACXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4500E144X1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500E144X1024ACXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
Produkt ist nicht verfügbar
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IAUS300N10S5N014ATMA1 Infineon-IAUS300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c159b7467d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB165N15NZ3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB14E6620611C&compId=BSB165N15NZ3G-DTE.pdf?ci_sign=dd418a760ded1deee6217633abfb617c5e3612cb
BSB165N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5505TRPBF description pVersion=0046&contRep=ZT&docId=E1C04E713E691CF1A6F5005056AB5A8F&compId=irfr5505.pdf?ci_sign=0982e56101b1ec4bf1fddcac02efbe5c3bbd2ff6
IRFR5505TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
67+1.07 EUR
79+0.91 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 53
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BTN8962TAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9
BTN8962TAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Case: PG-TO263-7
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: -27...30A
Number of channels: 1
Operating voltage: 5.5...40V DC
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
Application: DC motors
Type of integrated circuit: driver
Operating temperature: -40...150°C
auf Bestellung 597 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
18+4.2 EUR
Mindestbestellmenge: 13
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BCR08PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6AB0B73348469&compId=BCR08PNH6327.pdf?ci_sign=33c762796ef2bb8acd2b0c3413b906d9aa06ed86
BCR08PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.2 EUR
410+0.17 EUR
465+0.15 EUR
535+0.13 EUR
Mindestbestellmenge: 365
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BCR08PNH6327XTSA1 bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.086 EUR
Mindestbestellmenge: 3000
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FP20R06W1E3B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e
FP20R06W1E3B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696
IMZ120R030M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.93 EUR
Mindestbestellmenge: 3
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Protection: overheating OTP
auf Bestellung 1566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
158+0.45 EUR
Mindestbestellmenge: 114
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IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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