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S29GL01GT10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI040 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI043 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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IRFP4868PBF IRFP4868PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE900C419F5EA&compId=IRFP4868PBF.pdf?ci_sign=ffb090ca678853ce73ce3547e98b6c3affefd6bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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IRFP4768PBFXKMA1 IRFP4768PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 128 Stücke:
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15+4.86 EUR
20+3.63 EUR
25+3.3 EUR
100+2.9 EUR
Mindestbestellmenge: 15
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IRF7855TRPBF IRF7855TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ACE545C2EEF1A303005056AB0C4F&compId=irf7855pbf.pdf?ci_sign=b22b7175e73c8569212aaa050adf69f108f47aab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8113AB477520C7&compId=IPA60R180P7S.pdf?ci_sign=d8222d4a5b6ce829d39dbad5c90c25d3abcbc850 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate charge: 25nC
auf Bestellung 34 Stücke:
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34+2.1 EUR
Mindestbestellmenge: 34
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IR2108STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 10...20V
Maximum output current: 0.35A
Turn-on time: 220ns
Power dissipation: 0.625W
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.89 EUR
Mindestbestellmenge: 2500
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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 6÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 6...20V
auf Bestellung 2500 Stücke:
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2500+0.99 EUR
Mindestbestellmenge: 2500
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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
Mindestbestellmenge: 24
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IRFB3806PBF IRFB3806PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
64+1.12 EUR
77+0.93 EUR
100+0.86 EUR
Mindestbestellmenge: 44
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.47 EUR
Mindestbestellmenge: 2500
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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17+4.26 EUR
21+3.42 EUR
Mindestbestellmenge: 17
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain current: 100A
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ITS4140N ITS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 3357 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
48+1.5 EUR
55+1.32 EUR
100+1.2 EUR
500+1.13 EUR
Mindestbestellmenge: 44
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IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Number of channels: 6
Supply voltage: 11.5...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES IPD082N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
65+1.1 EUR
100+0.94 EUR
250+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 51
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84ED23234910B&compId=SN7002NH6327XTSA2.pdf?ci_sign=d6285ac03f0bea3b7779feaacb4ca2f8607ef04b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 9000 Stücke:
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278+0.26 EUR
404+0.18 EUR
585+0.12 EUR
688+0.1 EUR
983+0.073 EUR
1132+0.063 EUR
3000+0.051 EUR
6000+0.046 EUR
9000+0.043 EUR
Mindestbestellmenge: 278
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TLE75602ESDXUMA1 INFINEON TECHNOLOGIES Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.89 EUR
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IPB039N10N3GATMA1 IPB039N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB6625D5AA11C&compId=IPB039N10N3G-DTE.pdf?ci_sign=c1734f346b1519c8fdd37045c17c2fdcbb199a8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77ADCA613611C&compId=BSS159NH6327XTSA2.pdf?ci_sign=a1987899b02136e077038fc3e5ada84cd40cf250 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 1043 Stücke:
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139+0.51 EUR
202+0.35 EUR
257+0.28 EUR
309+0.23 EUR
368+0.19 EUR
447+0.16 EUR
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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 100A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Case: AG-EASY2B-2
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IRFS52N15DTRRP IRFS52N15DTRRP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4842F86155EA&compId=IRFS52N15DTRRP.pdf?ci_sign=ebc254e558cc0929f63fa9dc13b00da8547b2f4d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TLE5028CXGAD28HAMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: TLE5028CXGAD28HAMA1
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+4.09 EUR
Mindestbestellmenge: 1500
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7758B7BEB910B&compId=BSR202NL6327HTSA1.pdf?ci_sign=55845be12c367b8471e90a3bdc2297c96057b3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Case: SC59
Produkt ist nicht verfügbar
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BTS134D BTS134D INFINEON TECHNOLOGIES BTS134D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 71 Stücke:
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20+3.63 EUR
30+2.4 EUR
33+2.19 EUR
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IPB019N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
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800+1.99 EUR
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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Type of integrated circuit: driver
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
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TLS850B0TBV33ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 500mA; D2PAK-5; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Application: automotive industry
Number of channels: 1
Protection: overheating OTP
auf Bestellung 1000 Stücke:
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1000+1.76 EUR
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
auf Bestellung 181 Stücke:
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45+1.6 EUR
153+0.47 EUR
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IPB60R360P7ATMA1 IPB60R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8968175445EF773D6&compId=IPB60R360P7.pdf?ci_sign=40ccf4ce5ead59d45d23717572646c4e08f7e2b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 986 Stücke:
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IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA49397A1FD2143&compId=IPD60R360P7.pdf?ci_sign=9e7e9500ebd8e602db7a1d94b31f61db7e493546 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 INFINEON TECHNOLOGIES BSB015N04NX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NGATMA1 INFINEON TECHNOLOGIES IPB015N04NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FZ600R12KS4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE894BC24492EF813D5&compId=FZ600R12KS4.pdf?ci_sign=a0460730c6d5a7ddfe7deaaf4d7f9bbcba82420d Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-2
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 3.9kW
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FF300R12KE4HOSA1 INFINEON TECHNOLOGIES Infineon-FF300R12KE4-DS-v02_01-en_de.pdf?fileId=db3a3043156fd57301161a3fed3c1e00 Category: IGBT modules
Description: Module: IGBT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+152.12 EUR
Mindestbestellmenge: 10
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Technology: CoolMOS™ CE
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.65Ω
Drain current: 6.2A
Pulsed drain current: 19A
Gate-source voltage: ±20V
Power dissipation: 82W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
auf Bestellung 2177 Stücke:
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90+0.8 EUR
101+0.71 EUR
102+0.7 EUR
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EVAL-IMM101T-046TOBO1 (SP004177752)
+2
 		EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Produkt ist nicht verfügbar
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BF2040E6814HTSA1 BF2040E6814HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8C6BF407458143&compId=BF2040.pdf?ci_sign=8ddd8e3e394ba0039b81be9437cdd764153593f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Electrical mounting: SMT
Case: SOT143
Kind of channel: depletion
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
auf Bestellung 3760 Stücke:
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255+0.28 EUR
370+0.19 EUR
420+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 255
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IRFS4510TRLPBF INFINEON TECHNOLOGIES IRSDS13318-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 43A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871ECA86FD211C&compId=BSC070N10NS5-DTE.pdf?ci_sign=78d14c5b1e85b14ec539aab59c7c72f104d0d1c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL512SAGBHAC13 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9216BA914DB1CC&compId=BSP316PH6327XTSA1-dte.pdf?ci_sign=24f11e30d9b56cd6b2e9295c8abcb5ffab3097fa Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
auf Bestellung 724 Stücke:
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152+0.47 EUR
229+0.31 EUR
Mindestbestellmenge: 152
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IRF1018EPBF IRF1018EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A72F1A6F5005056AB5A8F&compId=irf1018epbf.pdf?ci_sign=9421567cb65140505372d9bbe28ae392c50f1431 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 46nC
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
69+1.04 EUR
76+0.95 EUR
91+0.79 EUR
100+0.73 EUR
250+0.66 EUR
500+0.61 EUR
Mindestbestellmenge: 46
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BCR148SH6327 BCR148SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 100MHz
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
405+0.18 EUR
550+0.13 EUR
620+0.12 EUR
695+0.1 EUR
Mindestbestellmenge: 405
Im Einkaufswagen  Stück im Wert von  UAH
T560N16TOFXPSA1 T560N16TOFXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD799E02A0720C7&compId=T560N.pdf?ci_sign=f6ca51bfc40228aaf083e8bbcf0295fb3dd68388 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Gate current: 200mA
Load current: 559A
Max. load current: 809A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
1+148.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1324STRL AUIRF1324STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3A3FAA0BC9C7969E4&compId=AUIRF1324STRL.pdf?ci_sign=27b5c15d4666262949c44068c31395577e196a0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI040 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI043 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4868PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE900C419F5EA&compId=IRFP4868PBF.pdf?ci_sign=ffb090ca678853ce73ce3547e98b6c3affefd6bd
IRFP4868PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4768PBFXKMA1 Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
20+3.63 EUR
25+3.3 EUR
100+2.9 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF7855TRPBF pVersion=0046&contRep=ZT&docId=E221ACE545C2EEF1A303005056AB0C4F&compId=irf7855pbf.pdf?ci_sign=b22b7175e73c8569212aaa050adf69f108f47aab
IRF7855TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R180P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8113AB477520C7&compId=IPA60R180P7S.pdf?ci_sign=d8222d4a5b6ce829d39dbad5c90c25d3abcbc850
IPA60R180P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate charge: 25nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IR2108STRPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 10...20V
Maximum output current: 0.35A
Turn-on time: 220ns
Power dissipation: 0.625W
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.89 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 6÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 6...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP320N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379
IPP320N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3806PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811
IRFB3806PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
64+1.12 EUR
77+0.93 EUR
100+0.86 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
21+3.42 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPI030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain current: 100A
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 3357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
55+1.32 EUR
100+1.2 EUR
500+1.13 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRS23364DJPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Number of channels: 6
Supply voltage: 11.5...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IPD082N10N3GATMA1 IPD082N10N3G-DTE.pdf
IPD082N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
65+1.1 EUR
100+0.94 EUR
250+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 51
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SN7002NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84ED23234910B&compId=SN7002NH6327XTSA2.pdf?ci_sign=d6285ac03f0bea3b7779feaacb4ca2f8607ef04b
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
404+0.18 EUR
585+0.12 EUR
688+0.1 EUR
983+0.073 EUR
1132+0.063 EUR
3000+0.051 EUR
6000+0.046 EUR
9000+0.043 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.89 EUR
Mindestbestellmenge: 3000
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IPB039N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB6625D5AA11C&compId=IPB039N10N3G-DTE.pdf?ci_sign=c1734f346b1519c8fdd37045c17c2fdcbb199a8b
IPB039N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS159NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77ADCA613611C&compId=BSS159NH6327XTSA2.pdf?ci_sign=a1987899b02136e077038fc3e5ada84cd40cf250
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
202+0.35 EUR
257+0.28 EUR
309+0.23 EUR
368+0.19 EUR
447+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 100A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS52N15DTRRP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4842F86155EA&compId=IRFS52N15DTRRP.pdf?ci_sign=ebc254e558cc0929f63fa9dc13b00da8547b2f4d
IRFS52N15DTRRP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5028CXGAD28HAMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TLE5028CXGAD28HAMA1
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+4.09 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
BSR202NL6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7758B7BEB910B&compId=BSR202NL6327HTSA1.pdf?ci_sign=55845be12c367b8471e90a3bdc2297c96057b3b9
BSR202NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Case: SC59
Produkt ist nicht verfügbar
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BTS134D BTS134D.pdf
BTS134D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.99 EUR
Mindestbestellmenge: 800
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1EDS5663HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Type of integrated circuit: driver
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 500mA; D2PAK-5; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Application: automotive industry
Number of channels: 1
Protection: overheating OTP
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.76 EUR
Mindestbestellmenge: 1000
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IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
153+0.47 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8968175445EF773D6&compId=IPB60R360P7.pdf?ci_sign=40ccf4ce5ead59d45d23717572646c4e08f7e2b7
IPB60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA49397A1FD2143&compId=IPD60R360P7.pdf?ci_sign=9e7e9500ebd8e602db7a1d94b31f61db7e493546
IPD60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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BSB015N04NX3GXUMA1 BSB015N04NX3G-DTE.pdf
BSB015N04NX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NG-DTE.pdf
IPB015N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FZ600R12KS4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE894BC24492EF813D5&compId=FZ600R12KS4.pdf?ci_sign=a0460730c6d5a7ddfe7deaaf4d7f9bbcba82420d
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-2
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 3.9kW
Produkt ist nicht verfügbar
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FF300R12KE4HOSA1 Infineon-FF300R12KE4-DS-v02_01-en_de.pdf?fileId=db3a3043156fd57301161a3fed3c1e00
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+152.12 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Technology: CoolMOS™ CE
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.65Ω
Drain current: 6.2A
Pulsed drain current: 19A
Gate-source voltage: ±20V
Power dissipation: 82W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
90+0.8 EUR
101+0.71 EUR
102+0.7 EUR
Mindestbestellmenge: 81
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EVAL-IMM101T-046TOBO1 (SP004177752) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-046TOBO1 (SP004177752)
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Produkt ist nicht verfügbar
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BF2040E6814HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8C6BF407458143&compId=BF2040.pdf?ci_sign=8ddd8e3e394ba0039b81be9437cdd764153593f3
BF2040E6814HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Electrical mounting: SMT
Case: SOT143
Kind of channel: depletion
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
auf Bestellung 3760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
255+0.28 EUR
370+0.19 EUR
420+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 255
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 43A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC070N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871ECA86FD211C&compId=BSC070N10NS5-DTE.pdf?ci_sign=78d14c5b1e85b14ec539aab59c7c72f104d0d1c2
BSC070N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL512SAGBHAC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BSP316PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9216BA914DB1CC&compId=BSP316PH6327XTSA1-dte.pdf?ci_sign=24f11e30d9b56cd6b2e9295c8abcb5ffab3097fa
BSP316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
229+0.31 EUR
Mindestbestellmenge: 152
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IRF1018EPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A72F1A6F5005056AB5A8F&compId=irf1018epbf.pdf?ci_sign=9421567cb65140505372d9bbe28ae392c50f1431
IRF1018EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 46nC
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
69+1.04 EUR
76+0.95 EUR
91+0.79 EUR
100+0.73 EUR
250+0.66 EUR
500+0.61 EUR
Mindestbestellmenge: 46
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BCR148SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276
BCR148SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 100MHz
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
405+0.18 EUR
550+0.13 EUR
620+0.12 EUR
695+0.1 EUR
Mindestbestellmenge: 405
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T560N16TOFXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD799E02A0720C7&compId=T560N.pdf?ci_sign=f6ca51bfc40228aaf083e8bbcf0295fb3dd68388
T560N16TOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Gate current: 200mA
Load current: 559A
Max. load current: 809A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+148.36 EUR
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XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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AUIRF1324STRL pVersion=0046&contRep=ZT&docId=005056AB752F1ED3A3FAA0BC9C7969E4&compId=AUIRF1324STRL.pdf?ci_sign=27b5c15d4666262949c44068c31395577e196a0d
AUIRF1324STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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