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BSZ075N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1DB36696E11C&compId=BSZ075N08NS5-DTE.pdf?ci_sign=ea14860559aa7e61c2d27222f8be8bf43b4b6c42 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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CY8C4013SXI-411T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SOIC16
Type of integrated circuit: PSoC microcontroller
Case: SOIC16
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 12
Clock frequency: 16MHz
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.13 EUR
Mindestbestellmenge: 2500
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF99C3096888A143&compId=IPD95R450P7.pdf?ci_sign=0082607c363ab7b28ae784d1f635cccdd4fd5598 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 950V
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
29+2.47 EUR
33+2.17 EUR
35+2.06 EUR
37+1.97 EUR
Mindestbestellmenge: 25
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AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4A106E0F411C&compId=BSZ150N10LS3G-DTE.pdf?ci_sign=2fde45fc4d6ab9a87f8206295ac3e685a3111857 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29JL032J70BHI310 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70BHI313 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL032J70BHI320 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70BHI323 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL032J70TFI010 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70TFI020 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70TFI023 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL032J70TFI210 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70TFI213 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL032J70TFI313 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL032J70TFI323 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL032J70TFI410 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70TFI423 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AUIRF7342QTR AUIRF7342QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7448F1A6F5005056AB5A8F&compId=auirf7342q.pdf?ci_sign=97ff50904365263a4dbd19246af4cbb382583c69 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DD160N22K DD160N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 4.6kA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
1+208.45 EUR
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DD260N16K DD260N16K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Case: BG-PB50-1
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.32V
Load current: 260A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.5kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+208.21 EUR
3+205.13 EUR
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BAV170E6327HTSA1 BAV170E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2BEA44BDB8469&compId=BAV170E6327.pdf?ci_sign=c347e245b0638e8d11b19d03a57c8b8039a8d928 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5995 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
428+0.17 EUR
633+0.11 EUR
748+0.096 EUR
1341+0.053 EUR
1421+0.05 EUR
Mindestbestellmenge: 313
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IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+2.52 EUR
Mindestbestellmenge: 800
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IPB50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 100W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 100W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.62 EUR
Mindestbestellmenge: 1000
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EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658 Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Kind of module: motor driver
Kit contents: prototype board
Type of development kit: evaluation
Kind of connector: screw terminal x2
Application: motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-015M
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+69.78 EUR
Mindestbestellmenge: 2
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP752R BSP752R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697694FF64B4469&compId=BSP752R.pdf?ci_sign=120788f34bf08562a5f2c30c36ca2a03be1718c5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 2541 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
29+2.55 EUR
43+1.67 EUR
46+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 19
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CY7C1020DV33-10ZSXIT INFINEON TECHNOLOGIES CYPRS10439-1.pdf?t.download=true&u=5oefqw Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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TLE9104SHXUMA1 INFINEON TECHNOLOGIES TLE9104SH_Rev1.31_9-30-20.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 4; N-Channel; SMD; PG-DSO-20-88
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-20-88
On-state resistance: 0.3Ω
Kind of package: reel; tape
Supply voltage: 3.3...5.5V DC
Technology: FLEX
Operating temperature: -40...150°C
Turn-on time: 15µs
Turn-off time: 15µs
Application: automotive industry
Interface: SPI
Produkt ist nicht verfügbar
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IPU95R450P7AKMA1 IPU95R450P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA41453BF4143&compId=IPU95R450P7.pdf?ci_sign=3096511d5ab54501a3504b92e9f2db8a67c5ece1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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ICE5AR0680BZSXKLA1
+1
 		ICE5AR0680BZSXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F2AF8C00A50A18&compId=ICE5ARxxxxBZS.pdf?ci_sign=a62ab432ead4174929122b170c27ba0a6892bb00 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Mounting: THT
Power: 66/39/41W
Operating temperature: -40...140°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 5.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: DIP7
Topology: flyback
Produkt ist nicht verfügbar
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD7A31E17960C4&compId=BSC010N04LS6ATMA1.pdf?ci_sign=c176625c6ac30d6e40377b1953ac9e5b9dcd35f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 67nC
Produkt ist nicht verfügbar
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IDB30E120ATMA1 IDB30E120ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2439FDDAD0469&compId=IDB30E120ATMA1.pdf?ci_sign=5a621dfcb7943456ce2142ca34895c33f860913b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Case: TO263-3
Mounting: SMD
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. off-state voltage: 1.2kV
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
44+1.64 EUR
53+1.37 EUR
55+1.3 EUR
100+1.26 EUR
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
391+0.18 EUR
486+0.15 EUR
544+0.13 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 295
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IPD60R210PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226717c7674a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 386mΩ
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 64W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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BTS3080TF BTS3080TF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3ABC62F9178A749&compId=BTS3080TF.pdf?ci_sign=3810443f3d5f10bfcc1e70b96d9d100edc06eb2d Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Produkt ist nicht verfügbar
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BTS3080EJ BTS3080EJ INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3ABD78EE5ACA749&compId=BTS3080EJ.pdf?ci_sign=107228a4dc126019d2add779cdab39c617df8fab Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 218µs
Produkt ist nicht verfügbar
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BFR740L3RHE6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC22FB9910D33D7&compId=BFR740L3RHE6327.pdf?ci_sign=9b19446fb72ee7a8cb9dcedc0c7fefdbb1f06a39 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Produkt ist nicht verfügbar
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ICE3BR4765JFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3BR4765J_v2_2_10Jun08.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a3043156fd5730115da40851e152a Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.64 EUR
Mindestbestellmenge: 50
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BSC014N04LSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.96 EUR
Mindestbestellmenge: 5000
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IPD020N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Category: Transistors - Unclassified
Description: IPD020N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.65 EUR
Mindestbestellmenge: 2000
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IPP020N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.99 EUR
Mindestbestellmenge: 100
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BSZ097N04LSGATMA1 BSZ097N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3171A02F811C&compId=BSZ097N04LSG-DTE.pdf?ci_sign=96a9ba60dce4f0333f590b7f58775de33fdfe021 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Polarisation: unipolar
On-state resistance: 9.7mΩ
Gate-source voltage: ±20V
Power dissipation: 35W
Drain current: 40A
Drain-source voltage: 40V
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
126+0.57 EUR
146+0.49 EUR
154+0.46 EUR
160+0.45 EUR
Mindestbestellmenge: 97
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ICE3BS03LJGXUMA1 INFINEON TECHNOLOGIES Datasheet_ICE3BS03LJG_6Dec07-V2_0+.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a30431689f4420116b2b751ff05b0 Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 35495 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.8 EUR
Mindestbestellmenge: 2500
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC9C6E07FC35EA&compId=IRF9389TRPBF.pdf?ci_sign=ea3b1216efc13bc500124d935d1fdf6b8d441c11 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1105 Stücke:
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107+0.67 EUR
142+0.51 EUR
207+0.35 EUR
220+0.33 EUR
250+0.31 EUR
Mindestbestellmenge: 107
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IPW60R045CPFKSA1 IPW60R045CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E4C7AF9B31BF&compId=IPW60R045CP-DTE.pdf?ci_sign=5e3f47fef8e1cb1491e58f40da372d83d84901cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
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3+24.32 EUR
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IAUA250N04S6N006AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 169nC
On-state resistance: 0.7mΩ
Drain current: 57A
Pulsed drain current: 1.5kA
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 250W
Case: PG-HSOF-5
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Version: ESD
auf Bestellung 1464 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
75+0.96 EUR
104+0.69 EUR
109+0.66 EUR
111+0.64 EUR
500+0.63 EUR
Mindestbestellmenge: 61
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IPP50R380CEXKSA1 IPP50R380CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABE0A807B4FD51CC&compId=IPP50R380CE-DTE.pdf?ci_sign=dd0098b3e3b779d20ea0de44e83faea4209ef4ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
68+1.06 EUR
89+0.8 EUR
Mindestbestellmenge: 50
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IRFP3077PBF IRFP3077PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACADBF1A6F5005056AB5A8F&compId=irfp3077pbf.pdf?ci_sign=38aa3277a7433eff22b1057a39ac52cbd0fb9e09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE9C65B11E11C&compId=BSZ018NE2LS-DTE.pdf?ci_sign=54744ff0f6629e3500246fd292657e4cc93101aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
50+1.44 EUR
63+1.14 EUR
76+0.94 EUR
80+0.9 EUR
100+0.86 EUR
Mindestbestellmenge: 42
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BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DEF45337FA11C&compId=BSZ018NE2LSI-DTE.pdf?ci_sign=acae32995b5cdedb2f43968670a8e2ecbaebfed6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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S25FL128SAGBHM203 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of memory: NOR
Interface: QUAD SPI
Kind of package: reel; tape
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: BGA24
Memory: 128Mb FLASH
Application: automotive
Produkt ist nicht verfügbar
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IPD30N10S3L34ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.77 EUR
Mindestbestellmenge: 2500
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IPD130N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.53 EUR
Mindestbestellmenge: 2000
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ISC030N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.56 EUR
Mindestbestellmenge: 5000
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DSL70E6327HTSA1 DSL70E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C31A82EAE398BF&compId=DSL70.pdf?ci_sign=bdd5a625ff49c6eb759330af494de0fb7d7bb029 Category: Protection diodes - arrays
Description: Diode: TVS array; 27A; 245W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Application: DSL applications
Leakage current: 5nA
Max. forward impulse current: 27A
Number of channels: 2
Max. off-state voltage: 50V
Peak pulse power dissipation: 245W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.11 EUR
Mindestbestellmenge: 14
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B31DD76B8F1A303005056AB0C4F&compId=irll2705pbf.pdf?ci_sign=b59a3ae6b96ab89ac72517290e013616f2a9d6b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1746 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
92+0.78 EUR
159+0.45 EUR
168+0.43 EUR
500+0.41 EUR
Mindestbestellmenge: 63
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IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Technology: HEXFET®
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD036N04LGATMA1 INFINEON TECHNOLOGIES Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 94W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.59 EUR
Mindestbestellmenge: 2500
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BSZ075N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1DB36696E11C&compId=BSZ075N08NS5-DTE.pdf?ci_sign=ea14860559aa7e61c2d27222f8be8bf43b4b6c42
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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CY8C4013SXI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SOIC16
Type of integrated circuit: PSoC microcontroller
Case: SOIC16
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 12
Clock frequency: 16MHz
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.13 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF99C3096888A143&compId=IPD95R450P7.pdf?ci_sign=0082607c363ab7b28ae784d1f635cccdd4fd5598
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 950V
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
29+2.47 EUR
33+2.17 EUR
35+2.06 EUR
37+1.97 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF2804L pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde
AUIRF2804L
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ150N10LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4A106E0F411C&compId=BSZ150N10LS3G-DTE.pdf?ci_sign=2fde45fc4d6ab9a87f8206295ac3e685a3111857
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70BHI310 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70BHI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70BHI320 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70BHI323 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI010 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI020 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI023 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI210 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI213 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI323 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI410 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70TFI423 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7342QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7448F1A6F5005056AB5A8F&compId=auirf7342q.pdf?ci_sign=97ff50904365263a4dbd19246af4cbb382583c69
AUIRF7342QTR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD160N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f
DD160N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 4.6kA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+208.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD260N16K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1
DD260N16K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Case: BG-PB50-1
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.32V
Load current: 260A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.5kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+208.21 EUR
3+205.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BAV170E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2BEA44BDB8469&compId=BAV170E6327.pdf?ci_sign=c347e245b0638e8d11b19d03a57c8b8039a8d928
BAV170E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
428+0.17 EUR
633+0.11 EUR
748+0.096 EUR
1341+0.053 EUR
1421+0.05 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+2.52 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 100W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 100W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.62 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
EVAL-IMM101T-015TOBO1 (SP004177748) pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Kind of module: motor driver
Kit contents: prototype board
Type of development kit: evaluation
Kind of connector: screw terminal x2
Application: motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-015M
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+69.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP752R pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697694FF64B4469&compId=BSP752R.pdf?ci_sign=120788f34bf08562a5f2c30c36ca2a03be1718c5
BSP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 2541 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
29+2.55 EUR
43+1.67 EUR
46+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1020DV33-10ZSXIT CYPRS10439-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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TLE9104SHXUMA1 TLE9104SH_Rev1.31_9-30-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 4; N-Channel; SMD; PG-DSO-20-88
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-20-88
On-state resistance: 0.3Ω
Kind of package: reel; tape
Supply voltage: 3.3...5.5V DC
Technology: FLEX
Operating temperature: -40...150°C
Turn-on time: 15µs
Turn-off time: 15µs
Application: automotive industry
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R450P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA41453BF4143&compId=IPU95R450P7.pdf?ci_sign=3096511d5ab54501a3504b92e9f2db8a67c5ece1
IPU95R450P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR0680BZSXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F2AF8C00A50A18&compId=ICE5ARxxxxBZS.pdf?ci_sign=a62ab432ead4174929122b170c27ba0a6892bb00
ICE5AR0680BZSXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Mounting: THT
Power: 66/39/41W
Operating temperature: -40...140°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 5.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: DIP7
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LS6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD7A31E17960C4&compId=BSC010N04LS6ATMA1.pdf?ci_sign=c176625c6ac30d6e40377b1953ac9e5b9dcd35f7
BSC010N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 67nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDB30E120ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2439FDDAD0469&compId=IDB30E120ATMA1.pdf?ci_sign=5a621dfcb7943456ce2142ca34895c33f860913b
IDB30E120ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Case: TO263-3
Mounting: SMD
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. off-state voltage: 1.2kV
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
44+1.64 EUR
53+1.37 EUR
55+1.3 EUR
100+1.26 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
BAS7002VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
391+0.18 EUR
486+0.15 EUR
544+0.13 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R210PFD7SAUMA1 Infineon-IPD60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226717c7674a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 386mΩ
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 64W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3080TF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3ABC62F9178A749&compId=BTS3080TF.pdf?ci_sign=3810443f3d5f10bfcc1e70b96d9d100edc06eb2d
BTS3080TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3080EJ pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3ABD78EE5ACA749&compId=BTS3080EJ.pdf?ci_sign=107228a4dc126019d2add779cdab39c617df8fab
BTS3080EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 218µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR740L3RHE6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC22FB9910D33D7&compId=BFR740L3RHE6327.pdf?ci_sign=9b19446fb72ee7a8cb9dcedc0c7fefdbb1f06a39
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR4765JFKLA1 Datasheet_ICE3BR4765J_v2_2_10Jun08.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a3043156fd5730115da40851e152a
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.64 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.96 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD020N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.65 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N03LF2SAKSA1 Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.99 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BSZ097N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3171A02F811C&compId=BSZ097N04LSG-DTE.pdf?ci_sign=96a9ba60dce4f0333f590b7f58775de33fdfe021
BSZ097N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Polarisation: unipolar
On-state resistance: 9.7mΩ
Gate-source voltage: ±20V
Power dissipation: 35W
Drain current: 40A
Drain-source voltage: 40V
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
126+0.57 EUR
146+0.49 EUR
154+0.46 EUR
160+0.45 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BS03LJGXUMA1 Datasheet_ICE3BS03LJG_6Dec07-V2_0+.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a30431689f4420116b2b751ff05b0
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 35495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC9C6E07FC35EA&compId=IRF9389TRPBF.pdf?ci_sign=ea3b1216efc13bc500124d935d1fdf6b8d441c11
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
142+0.51 EUR
207+0.35 EUR
220+0.33 EUR
250+0.31 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R045CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E4C7AF9B31BF&compId=IPW60R045CP-DTE.pdf?ci_sign=5e3f47fef8e1cb1491e58f40da372d83d84901cd
IPW60R045CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IAUA250N04S6N006AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 169nC
On-state resistance: 0.7mΩ
Drain current: 57A
Pulsed drain current: 1.5kA
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 250W
Case: PG-HSOF-5
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R2K0P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1
IPD80R2K0P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Version: ESD
auf Bestellung 1464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
75+0.96 EUR
104+0.69 EUR
109+0.66 EUR
111+0.64 EUR
500+0.63 EUR
Mindestbestellmenge: 61
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IPP50R380CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABE0A807B4FD51CC&compId=IPP50R380CE-DTE.pdf?ci_sign=dd0098b3e3b779d20ea0de44e83faea4209ef4ec
IPP50R380CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
68+1.06 EUR
89+0.8 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3077PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACADBF1A6F5005056AB5A8F&compId=irfp3077pbf.pdf?ci_sign=38aa3277a7433eff22b1057a39ac52cbd0fb9e09
IRFP3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE9C65B11E11C&compId=BSZ018NE2LS-DTE.pdf?ci_sign=54744ff0f6629e3500246fd292657e4cc93101aa
BSZ018NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
50+1.44 EUR
63+1.14 EUR
76+0.94 EUR
80+0.9 EUR
100+0.86 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DEF45337FA11C&compId=BSZ018NE2LSI-DTE.pdf?ci_sign=acae32995b5cdedb2f43968670a8e2ecbaebfed6
BSZ018NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGBHM203 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of memory: NOR
Interface: QUAD SPI
Kind of package: reel; tape
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: BGA24
Memory: 128Mb FLASH
Application: automotive
Produkt ist nicht verfügbar
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IPD30N10S3L34ATMA2 Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.53 EUR
Mindestbestellmenge: 2000
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ISC030N10NM6ATMA1 Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.56 EUR
Mindestbestellmenge: 5000
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DSL70E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C31A82EAE398BF&compId=DSL70.pdf?ci_sign=bdd5a625ff49c6eb759330af494de0fb7d7bb029
DSL70E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 27A; 245W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Application: DSL applications
Leakage current: 5nA
Max. forward impulse current: 27A
Number of channels: 2
Max. off-state voltage: 50V
Peak pulse power dissipation: 245W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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IRLL2705TRPBF pVersion=0046&contRep=ZT&docId=E2227B31DD76B8F1A303005056AB0C4F&compId=irll2705pbf.pdf?ci_sign=b59a3ae6b96ab89ac72517290e013616f2a9d6b3
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1746 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
92+0.78 EUR
159+0.45 EUR
168+0.43 EUR
500+0.41 EUR
Mindestbestellmenge: 63
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IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Technology: HEXFET®
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD036N04LGATMA1 Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 94W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.59 EUR
Mindestbestellmenge: 2500
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