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IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
50+2.59 EUR
200+2.33 EUR
Mindestbestellmenge: 50
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GS-EVB-HB-0650603B-HD INFINEON TECHNOLOGIES Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
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1+306.08 EUR
2+275.48 EUR
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SGP15N120XKSA1 INFINEON TECHNOLOGIES SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.85 EUR
150+4.36 EUR
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BC857CE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.044 EUR
Mindestbestellmenge: 10000
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BC857CWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.044 EUR
Mindestbestellmenge: 3000
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA71791143A11C&compId=IPB015N08N5-DTE.pdf?ci_sign=3b3d54fa795afd84f282f91371f0c9b7e9caecb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.9 EUR
20+3.73 EUR
100+3.35 EUR
250+3.16 EUR
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IPD380P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 35A; 125W; DPAK,TO252
Gate charge: 63nC
On-state resistance: 38mΩ
Gate-source voltage: 20V
Drain current: 35A
Drain-source voltage: 60V
Power dissipation: 125W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
Mounting: SMD
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.94 EUR
Mindestbestellmenge: 2500
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BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Type of diode: TVS
Case: TSSLP-2-4
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 20nA
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Version: ESD
auf Bestellung 8252 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
500+0.14 EUR
569+0.13 EUR
658+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 385
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IRFS7537TRLPBF INFINEON TECHNOLOGIES irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS443P BTS443P INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F78AF1A6F5005056AB5A8F&compId=BTS443P_DS_v10.pdf?ci_sign=0db5963a0c6bf5177e49dfb2e922acd92c0ac2f3 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.75 EUR
Mindestbestellmenge: 2500
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IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6A3F1A6F5005056AB5A8F&compId=irfs3004pbf.pdf?ci_sign=a529c6af990cdf3405d34e5db519c1ceb8d80a66 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.09 EUR
26+2.79 EUR
100+2.43 EUR
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FF200R12KS4HOSA1 INFINEON TECHNOLOGIES FF200R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 INFINEON TECHNOLOGIES FF400R12KE3.pdf Category: IGBT modules
Description: FF400R12KE3HOSA1
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
10+259.76 EUR
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BSC155N06NDATMA1 INFINEON TECHNOLOGIES Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.62 EUR
Mindestbestellmenge: 5000
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES IPP600N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Drain current: 25A
Power dissipation: 136W
Drain-source voltage: 250V
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 92 Stücke:
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23+3.12 EUR
26+2.76 EUR
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BCR166E6327HTSA1 INFINEON TECHNOLOGIES bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.59 EUR
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BAR6402ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Category: Unclassified
Description: BAR6402ELE6327XTMA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.086 EUR
Mindestbestellmenge: 15000
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PVG612SPBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.08 EUR
Mindestbestellmenge: 50
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 22 Stücke:
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22+3.25 EUR
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.92 EUR
Mindestbestellmenge: 1000
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IPD096N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 73A; 100W; DPAK,TO252; SMT
Technology: MOSFET
On-state resistance: 7.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
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BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871A373A03E11C&compId=BSC070N10NS3G-dte.pdf?ci_sign=5c8c232415a157613259f38f01c15cb9959274fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRPBF IRFR3709ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD03F9598C55EA&compId=IRFR3709ZTRPBF.pdf?ci_sign=81100efa9686ec246f64dec8abf1c711090f7610 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRRPBF IRFR3709ZTRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C3E9C2773DF1A303005056AB0C4F&compId=irfr3709zpbf.pdf?ci_sign=64d82bd91e26be1182992fc1edd4c49fe3fb408a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D8C91B1A2E143&compId=IAUT300N08S5N012.pdf?ci_sign=a7ed1dfb1242275fc40ac963e384fc5474eb3a2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT240N08S5N019ATMA1 IAUT240N08S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5F158E68B8BF&compId=IAUT240N08S5N019.pdf?ci_sign=489748605735eacfc3f8b132fe907392a2a67dbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA3F7795BC38BF&compId=IAUT300N10S5N015.pdf?ci_sign=e3a82d26f35a79f1a1297b5f8c8713126b20d22b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC4A423E6C873D7&compId=AUIRGx4062D1.pdf?ci_sign=af7171373d8d0f811877b4635ab8c5c885c6ede0 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22271D69DD6D2F1A303005056AB0C4F&compId=irgs4062dpbf.pdf?ci_sign=f1806f5a728b86898d073ed3e7f80a224519b756 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
496+0.14 EUR
650+0.11 EUR
733+0.098 EUR
857+0.084 EUR
1073+0.067 EUR
Mindestbestellmenge: 385
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BSC024NE2LSATMA1 BSC024NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
On-state resistance: 2.4mΩ
Power dissipation: 48W
Gate-source voltage: ±20V
Case: PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IR2130JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+5.98 EUR
Mindestbestellmenge: 500
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IRF7493TRPBF IRF7493TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A5F4DDE2DCF1A303005056AB0C4F&compId=irf7493pbf.pdf?ci_sign=c0b1b5129242a232c27549a49cf8e89a1f378ec3 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E70C51032B3D1&compId=TD330N16KOF.pdf?ci_sign=cf0811a4f9d14c4abaff1a75e1d02469aca9fb02 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
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TT330N16KOF TT330N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D35FD476572745&compId=TT330N16KOF.pdf?ci_sign=8482230765bc41badec92cc3d5f0c1ef031b3b33 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.99 EUR
Mindestbestellmenge: 3000
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IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C33D8F8C211C&compId=IPB011N04LG-DTE.pdf?ci_sign=886231efb9054af0d16648b0abff6e958593f7ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C55CF5FE411C&compId=IPB011N04NG-dte.pdf?ci_sign=afef0bed750b02c09e3dc1ba463cc912cc3f0be4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
Mindestbestellmenge: 50
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BSS169IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.073 EUR
Mindestbestellmenge: 3000
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IPP023N04NGXKSA1 IPP023N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96896E26C211C&compId=IPP023N04NG-DTE.pdf?ci_sign=123ca1164b118b381a0221555f5c278b376013f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF IRF1018ESTRLPBF INFINEON TECHNOLOGIES infineon-irf1018e-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
51+1.42 EUR
57+1.27 EUR
69+1.04 EUR
100+1 EUR
Mindestbestellmenge: 43
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE76C04CE7E469&compId=TT250N18KOF.pdf?ci_sign=a51bfa528b7ada5ee438c08be9b69cdbf4b92422 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+250.25 EUR
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.37 EUR
Mindestbestellmenge: 2000
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BFR181E6327HTSA1 BFR181E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1395 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
343+0.21 EUR
391+0.18 EUR
455+0.16 EUR
544+0.13 EUR
596+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 25102 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
236+0.3 EUR
345+0.21 EUR
410+0.17 EUR
506+0.14 EUR
596+0.12 EUR
1000+0.1 EUR
3000+0.086 EUR
6000+0.077 EUR
Mindestbestellmenge: 173
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IPB50R250CPATMA1 IPB50R250CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE18A4AE4D71CC&compId=IPB50R250CP-DTE.pdf?ci_sign=b3cb3c08e907a1bd70e009ec0d68109bdbd7b8b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Power dissipation: 114W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPP60R250CPXKSA1 IPP60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC146N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.7 EUR
Mindestbestellmenge: 5000
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IKD06N60RFATMA1 IKD06N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
52+1.4 EUR
55+1.3 EUR
65+1.1 EUR
100+1.03 EUR
Mindestbestellmenge: 47
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IRF7328TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7328-datasheet-en.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7328TRPBF IRF7328TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
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TLE4207GXUMA2 TLE4207GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF2B14155202745&compId=TLE4207G.pdf?ci_sign=fe0125a4b300ae58a3cda1acbb44855e4d17b0aa Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Application: universal
Output current: 0.8A
Number of channels: 2
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
54+1.33 EUR
57+1.26 EUR
100+1.2 EUR
Mindestbestellmenge: 52
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IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.59 EUR
200+2.33 EUR
Mindestbestellmenge: 50
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GS-EVB-HB-0650603B-HD
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+306.08 EUR
2+275.48 EUR
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SGP15N120XKSA1 SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.85 EUR
150+4.36 EUR
Mindestbestellmenge: 50
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BC857CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.044 EUR
Mindestbestellmenge: 10000
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BC857CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.044 EUR
Mindestbestellmenge: 3000
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IPB015N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA71791143A11C&compId=IPB015N08N5-DTE.pdf?ci_sign=3b3d54fa795afd84f282f91371f0c9b7e9caecb8
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
20+3.73 EUR
100+3.35 EUR
250+3.16 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPD380P06NMATMA1 Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 35A; 125W; DPAK,TO252
Gate charge: 63nC
On-state resistance: 38mΩ
Gate-source voltage: 20V
Drain current: 35A
Drain-source voltage: 60V
Power dissipation: 125W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
Mounting: SMD
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.94 EUR
Mindestbestellmenge: 2500
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BSC039N06NS pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae
BSC039N06NS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402
ESD101B102ELSE6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Type of diode: TVS
Case: TSSLP-2-4
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 20nA
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Version: ESD
auf Bestellung 8252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
500+0.14 EUR
569+0.13 EUR
658+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7537TRLPBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS443P description pVersion=0046&contRep=ZT&docId=E1C0475774F78AF1A6F5005056AB5A8F&compId=BTS443P_DS_v10.pdf?ci_sign=0db5963a0c6bf5177e49dfb2e922acd92c0ac2f3
BTS443P
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.75 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3004PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6A3F1A6F5005056AB5A8F&compId=irfs3004pbf.pdf?ci_sign=a529c6af990cdf3405d34e5db519c1ceb8d80a66
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
26+2.79 EUR
100+2.43 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KS4HOSA1 FF200R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 FF400R12KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: FF400R12KE3HOSA1
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+259.76 EUR
Mindestbestellmenge: 10
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BSC155N06NDATMA1 Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.62 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPP600N25N3GXKSA1 IPP600N25N3G-DTE.pdf
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Drain current: 25A
Power dissipation: 136W
Drain-source voltage: 250V
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
26+2.76 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327HTSA1 bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IR2114SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
Mindestbestellmenge: 9
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BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BAR6402ELE6327XTMA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.086 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
PVG612SPBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.08 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
1EDC10I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC10I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.92 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 73A; 100W; DPAK,TO252; SMT
Technology: MOSFET
On-state resistance: 7.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSC070N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871A373A03E11C&compId=BSC070N10NS3G-dte.pdf?ci_sign=5c8c232415a157613259f38f01c15cb9959274fa
BSC070N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD03F9598C55EA&compId=IRFR3709ZTRPBF.pdf?ci_sign=81100efa9686ec246f64dec8abf1c711090f7610
IRFR3709ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRRPBF pVersion=0046&contRep=ZT&docId=E221C3E9C2773DF1A303005056AB0C4F&compId=irfr3709zpbf.pdf?ci_sign=64d82bd91e26be1182992fc1edd4c49fe3fb408a
IRFR3709ZTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73
BSC014N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT300N08S5N012ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D8C91B1A2E143&compId=IAUT300N08S5N012.pdf?ci_sign=a7ed1dfb1242275fc40ac963e384fc5474eb3a2f
IAUT300N08S5N012ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT240N08S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5F158E68B8BF&compId=IAUT240N08S5N019.pdf?ci_sign=489748605735eacfc3f8b132fe907392a2a67dbe
IAUT240N08S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT300N10S5N015ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA3F7795BC38BF&compId=IAUT300N10S5N015.pdf?ci_sign=e3a82d26f35a79f1a1297b5f8c8713126b20d22b
IAUT300N10S5N015ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGSL4062D1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC4A423E6C873D7&compId=AUIRGx4062D1.pdf?ci_sign=af7171373d8d0f811877b4635ab8c5c885c6ede0
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRGSL4062DPBF pVersion=0046&contRep=ZT&docId=E22271D69DD6D2F1A303005056AB0C4F&compId=irgs4062dpbf.pdf?ci_sign=f1806f5a728b86898d073ed3e7f80a224519b756
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
496+0.14 EUR
650+0.11 EUR
733+0.098 EUR
857+0.084 EUR
1073+0.067 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSC024NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181
BSC024NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
On-state resistance: 2.4mΩ
Power dissipation: 48W
Gate-source voltage: ±20V
Case: PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IR2130JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+5.98 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IRF7493TRPBF description pVersion=0046&contRep=ZT&docId=E221A5F4DDE2DCF1A303005056AB0C4F&compId=irf7493pbf.pdf?ci_sign=c0b1b5129242a232c27549a49cf8e89a1f378ec3
IRF7493TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TD330N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E70C51032B3D1&compId=TD330N16KOF.pdf?ci_sign=cf0811a4f9d14c4abaff1a75e1d02469aca9fb02
TD330N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT330N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D35FD476572745&compId=TT330N16KOF.pdf?ci_sign=8482230765bc41badec92cc3d5f0c1ef031b3b33
TT330N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.99 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C33D8F8C211C&compId=IPB011N04LG-DTE.pdf?ci_sign=886231efb9054af0d16648b0abff6e958593f7ba
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C55CF5FE411C&compId=IPB011N04NG-dte.pdf?ci_sign=afef0bed750b02c09e3dc1ba463cc912cc3f0be4
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.073 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPP023N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96896E26C211C&compId=IPP023N04NG-DTE.pdf?ci_sign=123ca1164b118b381a0221555f5c278b376013f2
IPP023N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018ESTRLPBF infineon-irf1018e-datasheet-en.pdf
IRF1018ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
51+1.42 EUR
57+1.27 EUR
69+1.04 EUR
100+1 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
TT250N18KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE76C04CE7E469&compId=TT250N18KOF.pdf?ci_sign=a51bfa528b7ada5ee438c08be9b69cdbf4b92422
TT250N18KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+250.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.37 EUR
Mindestbestellmenge: 2000
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BFR181E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310
BFR181E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
343+0.21 EUR
391+0.18 EUR
455+0.16 EUR
544+0.13 EUR
596+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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BSS83PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 25102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
236+0.3 EUR
345+0.21 EUR
410+0.17 EUR
506+0.14 EUR
596+0.12 EUR
1000+0.1 EUR
3000+0.086 EUR
6000+0.077 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
IPB50R250CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE18A4AE4D71CC&compId=IPB50R250CP-DTE.pdf?ci_sign=b3cb3c08e907a1bd70e009ec0d68109bdbd7b8b1
IPB50R250CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Power dissipation: 114W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0
IPP60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC146N10LS5ATMA1 Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.7 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775
IKD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRF8010PBF description pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
52+1.4 EUR
55+1.3 EUR
65+1.1 EUR
100+1.03 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TRPBFXTMA1 infineon-irf7328-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TRPBF pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd
IRF7328TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4207GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF2B14155202745&compId=TLE4207G.pdf?ci_sign=fe0125a4b300ae58a3cda1acbb44855e4d17b0aa
TLE4207GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Application: universal
Output current: 0.8A
Number of channels: 2
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
54+1.33 EUR
57+1.26 EUR
100+1.2 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
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