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IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 682 Stücke:
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16+4.65 EUR
26+2.79 EUR
28+2.65 EUR
100+2.55 EUR
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 9207 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
350+0.2 EUR
540+0.13 EUR
939+0.076 EUR
991+0.072 EUR
9000+0.071 EUR
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74E879E8C75EA&compId=SPW47N60C3.pdf?ci_sign=1a73e65522ac6237960a368d454b3746e49500ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 121 Stücke:
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4+18.33 EUR
6+12.51 EUR
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC092237EC5C143&compId=SPW47N60CFD.pdf?ci_sign=c0df2ab8085e621354099569b122d97599ed0c0d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 5mA
Supply voltage: 5.5...27V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
auf Bestellung 2434 Stücke:
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53+1.37 EUR
58+1.24 EUR
76+0.94 EUR
81+0.89 EUR
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BF5C458C24F1A303005056AB0C4F&compId=irfr024npbf.pdf?ci_sign=9b1c86bd4b0622dc63c7904ce4b9483a8f5c26cd description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9209 Stücke:
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91+0.79 EUR
113+0.63 EUR
130+0.55 EUR
138+0.52 EUR
143+0.5 EUR
Mindestbestellmenge: 91
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AUIRFR024N AUIRFR024N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04594540D61F1A6F5005056AB5A8F&compId=auirfr024n.pdf?ci_sign=ad8d4298fb54861854d9871cb66091ace3859e24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Topology: single transistor
Voltage class: 600V
Power: 625mW
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
auf Bestellung 75 Stücke:
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39+1.86 EUR
50+1.46 EUR
52+1.39 EUR
55+1.32 EUR
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
auf Bestellung 169 Stücke:
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40+1.82 EUR
44+1.64 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 40
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 0.22µs
Power: 625mW
auf Bestellung 29 Stücke:
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29+2.46 EUR
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Produkt ist nicht verfügbar
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IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 30V
Drain current: 9.1A
On-state resistance: 17.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 9.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 88A
Mounting: SMD
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Output current: -20...20A
Type of integrated circuit: driver
Power dissipation: 30.3W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.42 EUR
Mindestbestellmenge: 3
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IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF36409D0BF1A303005056AB0C4F&compId=irf9317pbf.pdf?ci_sign=8a0f5023cdbb5a2b9e43b14f674edeb990a3138a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -16A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Produkt ist nicht verfügbar
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED782B105FA65B54259&compId=ICE2PCS01G.pdf?ci_sign=c1d3e9b38604e08af0a8c32c9b4c5de70405956e Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
46+1.59 EUR
54+1.33 EUR
57+1.26 EUR
500+1.22 EUR
Mindestbestellmenge: 41
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2473 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
58+1.24 EUR
79+0.91 EUR
84+0.86 EUR
1000+0.83 EUR
Mindestbestellmenge: 46
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IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAA67076835EA&compId=IRFB7437PBF.pdf?ci_sign=b3843ba8ed4017c3b389d86bb5aa3a62671a2a3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 112 Stücke:
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34+2.16 EUR
61+1.19 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 34
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IR21834SPBF IR21834SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Power: 1W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC84639C915820&compId=IHW30N120R5.pdf?ci_sign=89c6f0bb98f687ad7406821198f0deac2a7ce69f Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 165W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 30A
Pulsed collector current: 90A
Turn-off time: 363ns
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
23+3.13 EUR
25+2.96 EUR
60+2.92 EUR
Mindestbestellmenge: 18
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IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9.8mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.6nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
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IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
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IPA060N06NM5SXKSA1 IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 224A
Mounting: THT
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
42+1.72 EUR
48+1.5 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 38
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IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9AD58F7ECE11C&compId=IPA060N06N-DTE.pdf?ci_sign=de88a38c0543e10336c2f0466946c10e8480c91d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPP060N06NAKSA1 IPP060N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9999EF799411C&compId=IPP060N06NAKSA1-DTE.pdf?ci_sign=ddc8b5c50d8ccdc8bbb43e8037890313ad456b22 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Output configuration: SPDT
Mounting: SMD
Case: TSLP-6-4
Type of integrated circuit: RF switch
Bandwidth: 0.05...6GHz
Produkt ist nicht verfügbar
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IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B672F1A6F5005056AB5A8F&compId=irf9z24n.pdf?ci_sign=86417c6f7b297148bbf68c7249788f86ad2c878e Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Kind of package: tube
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
177+0.41 EUR
187+0.38 EUR
Mindestbestellmenge: 107
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IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 8626 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
758+0.094 EUR
987+0.073 EUR
1107+0.065 EUR
1323+0.054 EUR
1401+0.051 EUR
Mindestbestellmenge: 556
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
77+0.93 EUR
159+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 55
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IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9BA476E56C0C0C4&compId=BSS127H6327XTSA2.pdf?ci_sign=b4356276ecc1ec69160130555772bdadebee35de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1781 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
300+0.24 EUR
376+0.19 EUR
443+0.16 EUR
511+0.14 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 173
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
658+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 209
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IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E27805D24F1A303005056AB0C4F&compId=irf7317pbf.pdf?ci_sign=64d961be387dcb2a1a46361559a7321aeb6a99b6 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869871C1DD99A469&compId=BTS5090-1EJA.pdf?ci_sign=af1f6a10ac5d51a8222a21f88fb9386d216a8cca Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Case: DSO8
Supply voltage: 13.5V DC
On-state resistance: 90mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2224 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.97 EUR
38+1.93 EUR
61+1.19 EUR
64+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 25
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IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Mounting: SMD
Case: SO16
Power: 1.25W
Supply voltage: 10...20V DC
Turn-on time: 155ns
Turn-off time: 137ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.6 EUR
20+3.58 EUR
Mindestbestellmenge: 16
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IRS2117SPBF IRS2117SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 140ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: THT
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 140ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 140ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
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BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
527+0.14 EUR
589+0.12 EUR
735+0.097 EUR
Mindestbestellmenge: 527
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BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7E23E4A19C469&compId=BAS16SH6327XTSA1.pdf?ci_sign=a904eb5d3264ef100a93b9fe2e434293d824a621 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4750 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
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BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 8824 Stücke:
Lieferzeit 14-21 Tag (e)
2977+0.024 EUR
Mindestbestellmenge: 2977
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB816C40A9AA469&compId=BAV99SH6327XTSA1.pdf?ci_sign=7841fb4160d2a365fb52354be87bec42fd0eebfe Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB81D40F0D6E469&compId=BAW101E6327HTSA1.pdf?ci_sign=a7075f50f6a18d06ea45d2ff461141e6063d316e Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT143
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
375+0.19 EUR
455+0.16 EUR
520+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 375
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BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7240 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
407+0.18 EUR
557+0.13 EUR
1076+0.066 EUR
1139+0.063 EUR
Mindestbestellmenge: 313
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BAS4005E6327HTSA1 BAS4005E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
407+0.18 EUR
569+0.13 EUR
667+0.11 EUR
834+0.086 EUR
1071+0.067 EUR
1132+0.063 EUR
Mindestbestellmenge: 278
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BAS4007E6327HTSA1 BAS4007E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
365+0.2 EUR
459+0.16 EUR
511+0.14 EUR
582+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 239
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 3576 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
135+0.53 EUR
194+0.37 EUR
285+0.25 EUR
302+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 74
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SMBTA42E6327HTSA1 SMBTA42E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD738071820F5EA&compId=SMBTA42.pdf?ci_sign=9899fa88d5c056e78cf168f4e052d2705dc28676 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
355+0.2 EUR
481+0.15 EUR
550+0.13 EUR
878+0.082 EUR
944+0.076 EUR
Mindestbestellmenge: 200
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BC846UE6327HTSA1 BC846UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E8A42A64A469&compId=BC846UE6327.pdf?ci_sign=ea630812afe3a68be987098d6de4ca9d0884f66b Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
Mindestbestellmenge: 198
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BC856UE6327 BC856UE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E14F5A90A469&compId=BC856UE6327.pdf?ci_sign=c2ecd216c6b7a85380859c7690c18974de788084 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.17 EUR
521+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C71BCCE2211C&compId=BFR106E6327-dte.pdf?ci_sign=41a49cfb5261526e3a9fbc63bc4a5f9d07c0e4e0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Case: SOT23
Frequency: 5GHz
Collector-emitter voltage: 16V
Collector current: 0.21A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1731 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
236+0.3 EUR
309+0.23 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BFR92PE6327 BFR92PE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B1C4B05EE2F92A15&compId=BFR92p.pdf?ci_sign=0796988a38b6bbbde893f563c65ac9fb4f19a8d9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 8310 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
329+0.22 EUR
488+0.15 EUR
847+0.085 EUR
895+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSR302NL6327HTSA1 BSR302NL6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A77D0304ED710B&compId=BSR302NL6327HTSA1.pdf?ci_sign=bec509c870b45911ebd7f61b3857176c3158df8e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C8DDA3C7E11C&compId=BFP193E6327-dte.pdf?ci_sign=adbef814c2b08bb11ceda7a75b0baf42f93db9f7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
277+0.26 EUR
363+0.2 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BCR133E6327 BCR133E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
497+0.14 EUR
Mindestbestellmenge: 497
Im Einkaufswagen  Stück im Wert von  UAH
BCR158E6327 BCR158E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C588C2D3EF2469&compId=BCR158.pdf?ci_sign=0e18e7a6b0bfae444245180d93ab4961cabe1251 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7058 Stücke:
Lieferzeit 14-21 Tag (e)
969+0.074 EUR
1112+0.064 EUR
1257+0.057 EUR
1450+0.049 EUR
1534+0.047 EUR
3000+0.046 EUR
Mindestbestellmenge: 969
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IRS21064SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7456TRPBF pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc
IRF7456TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4115PBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.65 EUR
26+2.79 EUR
28+2.65 EUR
100+2.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
BCV47E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 9207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
350+0.2 EUR
540+0.13 EUR
939+0.076 EUR
991+0.072 EUR
9000+0.071 EUR
Mindestbestellmenge: 264
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SPW47N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74E879E8C75EA&compId=SPW47N60C3.pdf?ci_sign=1a73e65522ac6237960a368d454b3746e49500ae
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.33 EUR
6+12.51 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N60CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC092237EC5C143&compId=SPW47N60CFD.pdf?ci_sign=c0df2ab8085e621354099569b122d97599ed0c0d
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7259-3GE pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf
TLE7259-3GE
Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 5mA
Supply voltage: 5.5...27V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
auf Bestellung 2434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
58+1.24 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRFR024NTRPBF description pVersion=0046&contRep=ZT&docId=E221BF5C458C24F1A303005056AB0C4F&compId=irfr024npbf.pdf?ci_sign=9b1c86bd4b0622dc63c7904ce4b9483a8f5c26cd
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
113+0.63 EUR
130+0.55 EUR
138+0.52 EUR
143+0.5 EUR
Mindestbestellmenge: 91
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AUIRFR024N pVersion=0046&contRep=ZT&docId=E1C04594540D61F1A6F5005056AB5A8F&compId=auirfr024n.pdf?ci_sign=ad8d4298fb54861854d9871cb66091ace3859e24
AUIRFR024N
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2118SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Topology: single transistor
Voltage class: 600V
Power: 625mW
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
50+1.46 EUR
52+1.39 EUR
55+1.32 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IR2301SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
44+1.64 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 0.22µs
Power: 625mW
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 30V
Drain current: 9.1A
On-state resistance: 17.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 9.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 88A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM30F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Output current: -20...20A
Type of integrated circuit: driver
Power dissipation: 30.3W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRF9317TRPBF pVersion=0046&contRep=ZT&docId=E221AF36409D0BF1A303005056AB0C4F&compId=irf9317pbf.pdf?ci_sign=8a0f5023cdbb5a2b9e43b14f674edeb990a3138a
IRF9317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -16A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2PCS01GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782B105FA65B54259&compId=ICE2PCS01G.pdf?ci_sign=c1d3e9b38604e08af0a8c32c9b4c5de70405956e
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
46+1.59 EUR
54+1.33 EUR
57+1.26 EUR
500+1.22 EUR
Mindestbestellmenge: 41
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
58+1.24 EUR
79+0.91 EUR
84+0.86 EUR
1000+0.83 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7437PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAA67076835EA&compId=IRFB7437PBF.pdf?ci_sign=b3843ba8ed4017c3b389d86bb5aa3a62671a2a3e
IRFB7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
61+1.19 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IR21834SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR21834SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Power: 1W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC84639C915820&compId=IHW30N120R5.pdf?ci_sign=89c6f0bb98f687ad7406821198f0deac2a7ce69f
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 165W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 30A
Pulsed collector current: 90A
Turn-off time: 363ns
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
23+3.13 EUR
25+2.96 EUR
60+2.92 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9.8mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.6nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NM5SXKSA1 Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20
IPA060N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 224A
Mounting: THT
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
42+1.72 EUR
48+1.5 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9AD58F7ECE11C&compId=IPA060N06N-DTE.pdf?ci_sign=de88a38c0543e10336c2f0466946c10e8480c91d
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP060N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9999EF799411C&compId=IPP060N06NAKSA1-DTE.pdf?ci_sign=ddc8b5c50d8ccdc8bbb43e8037890313ad456b22
IPP060N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Output configuration: SPDT
Mounting: SMD
Case: TSLP-6-4
Type of integrated circuit: RF switch
Bandwidth: 0.05...6GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B672F1A6F5005056AB5A8F&compId=irf9z24n.pdf?ci_sign=86417c6f7b297148bbf68c7249788f86ad2c878e
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Kind of package: tube
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
177+0.41 EUR
187+0.38 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 8626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
987+0.073 EUR
1107+0.065 EUR
1323+0.054 EUR
1401+0.051 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRPBF description pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
77+0.93 EUR
159+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS127H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9BA476E56C0C0C4&compId=BSS127H6327XTSA2.pdf?ci_sign=b4356276ecc1ec69160130555772bdadebee35de
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
300+0.24 EUR
376+0.19 EUR
443+0.16 EUR
511+0.14 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BAR6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
658+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF7317TRPBF description pVersion=0046&contRep=ZT&docId=E2219E27805D24F1A303005056AB0C4F&compId=irf7317pbf.pdf?ci_sign=64d961be387dcb2a1a46361559a7321aeb6a99b6
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5090-1EJA pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869871C1DD99A469&compId=BTS5090-1EJA.pdf?ci_sign=af1f6a10ac5d51a8222a21f88fb9386d216a8cca
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Case: DSO8
Supply voltage: 13.5V DC
On-state resistance: 90mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
38+1.93 EUR
61+1.19 EUR
64+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRS2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Mounting: SMD
Case: SO16
Power: 1.25W
Supply voltage: 10...20V DC
Turn-on time: 155ns
Turn-off time: 137ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.6 EUR
20+3.58 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRS2117SPBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 140ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118PBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: THT
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 140ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118SPBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 140ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR116SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35
BCR116SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
527+0.14 EUR
589+0.12 EUR
735+0.097 EUR
Mindestbestellmenge: 527
Im Einkaufswagen  Stück im Wert von  UAH
BAS16UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7E23E4A19C469&compId=BAS16SH6327XTSA1.pdf?ci_sign=a904eb5d3264ef100a93b9fe2e434293d824a621
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BAV70UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 8824 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2977+0.024 EUR
Mindestbestellmenge: 2977
Im Einkaufswagen  Stück im Wert von  UAH
BAV99UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB816C40A9AA469&compId=BAV99SH6327XTSA1.pdf?ci_sign=7841fb4160d2a365fb52354be87bec42fd0eebfe
BAV99UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW101E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB81D40F0D6E469&compId=BAW101E6327HTSA1.pdf?ci_sign=a7075f50f6a18d06ea45d2ff461141e6063d316e
BAW101E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT143
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
375+0.19 EUR
455+0.16 EUR
520+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 375
Im Einkaufswagen  Stück im Wert von  UAH
BAS4004E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
407+0.18 EUR
557+0.13 EUR
1076+0.066 EUR
1139+0.063 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BAS4005E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4005E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
407+0.18 EUR
569+0.13 EUR
667+0.11 EUR
834+0.086 EUR
1071+0.067 EUR
1132+0.063 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4007E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
365+0.2 EUR
459+0.16 EUR
511+0.14 EUR
582+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAT1503WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd
BAT1503WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 3576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
135+0.53 EUR
194+0.37 EUR
285+0.25 EUR
302+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA42E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD738071820F5EA&compId=SMBTA42.pdf?ci_sign=9899fa88d5c056e78cf168f4e052d2705dc28676
SMBTA42E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
355+0.2 EUR
481+0.15 EUR
550+0.13 EUR
878+0.082 EUR
944+0.076 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BC846UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E8A42A64A469&compId=BC846UE6327.pdf?ci_sign=ea630812afe3a68be987098d6de4ca9d0884f66b
BC846UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
198+0.36 EUR
Mindestbestellmenge: 198
Im Einkaufswagen  Stück im Wert von  UAH
BC856UE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E14F5A90A469&compId=BC856UE6327.pdf?ci_sign=c2ecd216c6b7a85380859c7690c18974de788084
BC856UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
521+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BFR106E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C71BCCE2211C&compId=BFR106E6327-dte.pdf?ci_sign=41a49cfb5261526e3a9fbc63bc4a5f9d07c0e4e0
BFR106E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Case: SOT23
Frequency: 5GHz
Collector-emitter voltage: 16V
Collector current: 0.21A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1731 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
236+0.3 EUR
309+0.23 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BFR92PE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B1C4B05EE2F92A15&compId=BFR92p.pdf?ci_sign=0796988a38b6bbbde893f563c65ac9fb4f19a8d9
BFR92PE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 8310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
329+0.22 EUR
488+0.15 EUR
847+0.085 EUR
895+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSR302NL6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A77D0304ED710B&compId=BSR302NL6327HTSA1.pdf?ci_sign=bec509c870b45911ebd7f61b3857176c3158df8e
BSR302NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP193E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C8DDA3C7E11C&compId=BFP193E6327-dte.pdf?ci_sign=adbef814c2b08bb11ceda7a75b0baf42f93db9f7
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
277+0.26 EUR
363+0.2 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BCR133E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a
BCR133E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
497+0.14 EUR
Mindestbestellmenge: 497
Im Einkaufswagen  Stück im Wert von  UAH
BCR158E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C588C2D3EF2469&compId=BCR158.pdf?ci_sign=0e18e7a6b0bfae444245180d93ab4961cabe1251
BCR158E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
969+0.074 EUR
1112+0.064 EUR
1257+0.057 EUR
1450+0.049 EUR
1534+0.047 EUR
3000+0.046 EUR
Mindestbestellmenge: 969
Im Einkaufswagen  Stück im Wert von  UAH
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