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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES IR38263M.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: PMBus; PVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES BSC110N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain current: 50A
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC118N10NSGATMA1 BSC118N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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BSC123N10LSGATMA1 BSC123N10LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Produkt ist nicht verfügbar
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BSC12DN20NS3GATMA1 BSC12DN20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC16DN25NS3GATMA1 BSC16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC196N10NSGATMA1 BSC196N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Features of semiconductor devices: logic level
Kind of channel: enhancement
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TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Case: PG-TSON-10
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±0.1%
Output current: 0.15A
Voltage drop: 0.25V
Output voltage: 2...14V
Input voltage: 4...45V
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES BTS500801TEA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Output voltage: 39V
Technology: High Current PROFET
auf Bestellung 515 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
500+2.57 EUR
Mindestbestellmenge: 14
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1079 Stücke:
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139+0.51 EUR
194+0.37 EUR
244+0.29 EUR
272+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 139
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ITS5215L ITS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Mounting: SMD
Number of channels: 2
Case: BSOP12
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 1090 Stücke:
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26+2.85 EUR
28+2.57 EUR
33+2.17 EUR
35+2.06 EUR
Mindestbestellmenge: 26
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2BB0A8349AA14&compId=TLE7258D.pdf?ci_sign=5a9629aac6deb0bd4bee617b0a5ad7dd08881e4f Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Case: SOD323
Max. forward impulse current: 10A
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
auf Bestellung 1983 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
271+0.26 EUR
315+0.23 EUR
355+0.2 EUR
397+0.18 EUR
521+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 200
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
auf Bestellung 86 Stücke:
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28+2.63 EUR
35+2.07 EUR
Mindestbestellmenge: 28
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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BSP78 BSP78 INFINEON TECHNOLOGIES BSP78.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Technology: HITFET®
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
35+2.1 EUR
38+1.9 EUR
100+1.62 EUR
250+1.43 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 23
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BTS5120-2EKA BTS5120-2EKA INFINEON TECHNOLOGIES BTS5120-2EKA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.2 EUR
35+2.09 EUR
38+1.9 EUR
100+1.62 EUR
250+1.42 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 23
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IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.39 EUR
13+5.75 EUR
25+4.78 EUR
50+4.38 EUR
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDFE7C04F673D1&compId=IPN80R1K2P7.pdf?ci_sign=016ba9a1e5be19df356a574b4dc7ffc00988a06e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DD100N16S DD100N16S INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.53 EUR
3+37.25 EUR
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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES IKD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78 Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Type of development kit: ARM Infineon
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kit contents: development board with XMCmicrocontroller; expansion board
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Components: XMC4800-F144
Family: XMC4800
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
610+0.12 EUR
695+0.1 EUR
770+0.093 EUR
1000+0.087 EUR
Mindestbestellmenge: 610
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
auf Bestellung 19415 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
715+0.1 EUR
930+0.077 EUR
1038+0.069 EUR
1188+0.06 EUR
1313+0.054 EUR
1437+0.05 EUR
3000+0.049 EUR
Mindestbestellmenge: 455
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.29 EUR
12+6.28 EUR
15+5.05 EUR
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3788 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
447+0.16 EUR
577+0.12 EUR
682+0.1 EUR
789+0.091 EUR
921+0.078 EUR
1009+0.071 EUR
1040+0.069 EUR
Mindestbestellmenge: 264
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT223
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: ±20V
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
243+0.29 EUR
257+0.28 EUR
268+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 193
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.07 EUR
8+9.19 EUR
10+8.21 EUR
Mindestbestellmenge: 7
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Active logical level: low
Supply voltage: 4.5...5.5V
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+6.69 EUR
Mindestbestellmenge: 800
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IPD040N03LF2SATMA1 INFINEON TECHNOLOGIES IPD040N03LF2SATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 73A; 75W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 75W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 4.05mΩ
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.42 EUR
Mindestbestellmenge: 2000
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; 4kV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Insulation voltage: 4kV
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.85 EUR
Mindestbestellmenge: 50
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; 4kV; -40÷85°C
Type of relay: solid state
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.85 EUR
Mindestbestellmenge: 50
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IPD30N06S4L23ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 30A; 36W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.47 EUR
Mindestbestellmenge: 2500
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES infineon-irl40sc228-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.63 EUR
20+3.73 EUR
22+3.32 EUR
26+2.85 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 200mA; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 200mA
Power dissipation: 0.625W
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Topology: H-bridge
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.19 EUR
Mindestbestellmenge: 2500
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IRLR3636TRLPBF INFINEON TECHNOLOGIES IRSDS10828-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.41 EUR
Mindestbestellmenge: 2500
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IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.56 EUR
Mindestbestellmenge: 200
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IKCM15F60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
14+13.26 EUR
42+11.94 EUR
Mindestbestellmenge: 14
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BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRS2004STRPBF INFINEON TECHNOLOGIES irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.92 EUR
Mindestbestellmenge: 2500
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BC817K40E6327HTSA1 INFINEON TECHNOLOGIES 4a-BC-817-40-E6433.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.048 EUR
Mindestbestellmenge: 3000
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BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.055 EUR
Mindestbestellmenge: 3000
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BCP5316H6327XTSA1 INFINEON TECHNOLOGIES bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: TO261-4
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.17 EUR
Mindestbestellmenge: 1000
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IR38263MTRPBFAUMA1 IR38263M.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: PMBus; PVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 BSC110N06NS3G-DTE.pdf
BSC110N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain current: 50A
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC117N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa
BSC117N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC118N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662
BSC118N10NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC123N10LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541
BSC123N10LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Produkt ist nicht verfügbar
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BSC12DN20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060
BSC12DN20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b
BSC16DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355
BSC190N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC196N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3
BSC196N10NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Features of semiconductor devices: logic level
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLS115B0LDXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48
TLS115B0LDXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Case: PG-TSON-10
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±0.1%
Output current: 0.15A
Voltage drop: 0.25V
Output voltage: 2...14V
Input voltage: 4...45V
Kind of voltage regulator: adjustable; LDO; linear
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS500801TEA.pdf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Output voltage: 39V
Technology: High Current PROFET
auf Bestellung 515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
500+2.57 EUR
Mindestbestellmenge: 14
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BSR316PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e
BSR316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1079 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
194+0.37 EUR
244+0.29 EUR
272+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 139
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ITS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Mounting: SMD
Number of channels: 2
Case: BSOP12
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 1090 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
28+2.57 EUR
33+2.17 EUR
35+2.06 EUR
Mindestbestellmenge: 26
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TLE7250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa
TLE7250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72
TLE7251VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
TLE7268SKXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75
TLE7250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a
TLE7250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7258DXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2BB0A8349AA14&compId=TLE7258D.pdf?ci_sign=5a9629aac6deb0bd4bee617b0a5ad7dd08881e4f
TLE7258DXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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BAS3010A03WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef
BAS3010A03WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Case: SOD323
Max. forward impulse current: 10A
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
auf Bestellung 1983 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
271+0.26 EUR
315+0.23 EUR
355+0.2 EUR
397+0.18 EUR
521+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 200
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IR2128SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
35+2.07 EUR
Mindestbestellmenge: 28
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IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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BSP78 BSP78.pdf
BSP78
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Technology: HITFET®
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
35+2.1 EUR
38+1.9 EUR
100+1.62 EUR
250+1.43 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 23
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BTS5120-2EKA BTS5120-2EKA.pdf
BTS5120-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
35+2.09 EUR
38+1.9 EUR
100+1.62 EUR
250+1.42 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 23
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IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.39 EUR
13+5.75 EUR
25+4.78 EUR
50+4.38 EUR
Mindestbestellmenge: 10
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IPN80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDFE7C04F673D1&compId=IPN80R1K2P7.pdf?ci_sign=016ba9a1e5be19df356a574b4dc7ffc00988a06e
IPN80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DD100N16S DD100N16S.pdf
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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BSC016N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586
BSC016N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 IKD04N60RF.pdf
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78
XMC4800 RELAX ETHERCAT KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Type of development kit: ARM Infineon
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kit contents: development board with XMCmicrocontroller; expansion board
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Components: XMC4800-F144
Family: XMC4800
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
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BCR108SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
610+0.12 EUR
695+0.1 EUR
770+0.093 EUR
1000+0.087 EUR
Mindestbestellmenge: 610
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BCR129E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS316NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254
BSS316NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
auf Bestellung 19415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
930+0.077 EUR
1038+0.069 EUR
1188+0.06 EUR
1313+0.054 EUR
1437+0.05 EUR
3000+0.049 EUR
Mindestbestellmenge: 455
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IPA60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6
IPA60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
12+6.28 EUR
15+5.05 EUR
Mindestbestellmenge: 10
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IPA60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f
IPA60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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BSS131H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
447+0.16 EUR
577+0.12 EUR
682+0.1 EUR
789+0.091 EUR
921+0.078 EUR
1009+0.071 EUR
1040+0.069 EUR
Mindestbestellmenge: 264
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BSP296L6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1
BSP296L6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT223
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: ±20V
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
243+0.29 EUR
257+0.28 EUR
268+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 193
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IGCM10F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.07 EUR
8+9.19 EUR
10+8.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Active logical level: low
Supply voltage: 4.5...5.5V
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+6.69 EUR
Mindestbestellmenge: 800
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 73A; 75W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 75W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 4.05mΩ
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.42 EUR
Mindestbestellmenge: 2000
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; 4kV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Insulation voltage: 4kV
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.85 EUR
Mindestbestellmenge: 50
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; 4kV; -40÷85°C
Type of relay: solid state
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.85 EUR
Mindestbestellmenge: 50
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IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 30A; 36W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.47 EUR
Mindestbestellmenge: 2500
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IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.63 EUR
20+3.73 EUR
22+3.32 EUR
26+2.85 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 200mA; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 200mA
Power dissipation: 0.625W
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Topology: H-bridge
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.19 EUR
Mindestbestellmenge: 2500
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.56 EUR
Mindestbestellmenge: 200
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+13.26 EUR
42+11.94 EUR
Mindestbestellmenge: 14
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BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
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BC817K40E6327HTSA1 4a-BC-817-40-E6433.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.048 EUR
Mindestbestellmenge: 3000
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BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.055 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BCP5316H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: TO261-4
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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