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IPB019N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
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800+2 EUR
Mindestbestellmenge: 800
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 41 Stücke:
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11+6.95 EUR
12+6.26 EUR
15+4.8 EUR
16+4.53 EUR
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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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BTS3800SL BTS3800SL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E30B5066C469&compId=BTS3800SL.pdf?ci_sign=cf2798fc7085ad14eef5f0487446413b0d9150bf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Case: PG-SCT595
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Technology: HITFET®
Kind of output: N-Channel
Turn-off time: 3µs
Turn-on time: 3µs
Output current: 0.35A
On-state resistance: 0.8Ω
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
62+1.16 EUR
74+0.98 EUR
136+0.53 EUR
144+0.5 EUR
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33ABC275D4143&compId=IPB100N06S2L05.pdf?ci_sign=ed9a21125ac2c67384789464ad8f62978609982b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA32C6912322143&compId=IPB100N06S205.pdf?ci_sign=cd8570fdde39d441592cb3a22ab9f2932d43b8c5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPP052N06L3GXKSA1 IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98E023A9B411C&compId=IPP052N06L3G-DTE.pdf?ci_sign=8a5b95f3a4bf719a2bed0f802edb055a4b86c61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
auf Bestellung 67 Stücke:
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30+2.42 EUR
45+1.62 EUR
62+1.16 EUR
65+1.1 EUR
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TLS850B0TBV33ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 500mA; D2PAK-5; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Protection: overheating OTP
Application: automotive industry
Number of channels: 1
auf Bestellung 1000 Stücke:
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1000+1.74 EUR
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
auf Bestellung 191 Stücke:
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45+1.6 EUR
153+0.47 EUR
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IPB60R360P7ATMA1 IPB60R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8968175445EF773D6&compId=IPB60R360P7.pdf?ci_sign=40ccf4ce5ead59d45d23717572646c4e08f7e2b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 986 Stücke:
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53+1.36 EUR
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IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA49397A1FD2143&compId=IPD60R360P7.pdf?ci_sign=9e7e9500ebd8e602db7a1d94b31f61db7e493546 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E964BC12BDC11C&compId=IPP015N04NG-DTE.pdf?ci_sign=e4e930fc62a0b08bfd25e00a3a3255eeba0cdc35 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Kind of package: tube
auf Bestellung 9 Stücke:
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9+7.95 EUR
Mindestbestellmenge: 9
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IPB015N04LGATMA1 IPB015N04LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA2FE9E0AFB2143&compId=IPB015N04LG.pdf?ci_sign=1a31c5b0016acfcba16c81af4f75670fe4ab153c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2093198D6C11C&compId=BSB015N04NX3G-DTE.pdf?ci_sign=b7867ebe58cbd3b3d3056e88f49c277850dedf12 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5CA15F7D7A11C&compId=IPB015N04NG-DTE.pdf?ci_sign=a9024a78fb9752bb225a91352e84938b6e0a7202 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF7606TRPBF IRF7606TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A7C9D225C7F1A303005056AB0C4F&compId=irf7606pbf.pdf?ci_sign=1c367cbf393a3a2237dfc8f4b42c4929181d01c6 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Mounting: SMD
Case: Micro8
Kind of package: reel
Type of transistor: P-MOSFET
Technology: HEXFET®
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE38DEF8FA44259&compId=ICE1HS01G-1.pdf?ci_sign=96815c7069c4d4ca3a0bb743e0a3848133bf4034 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
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BTS3134D BTS3134D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697D586252BC469&compId=BTS3134D.pdf?ci_sign=388ee08463115f09af1d881eb48523bb1a4de87b Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of output: N-Channel
Number of channels: 1
Kind of integrated circuit: low-side
Output current: 3.5A
Output voltage: 42V
Case: TO252-3
Technology: HITFET®
Mounting: SMD
Produkt ist nicht verfügbar
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FZ600R12KS4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE894BC24492EF813D5&compId=FZ600R12KS4.pdf?ci_sign=a0460730c6d5a7ddfe7deaaf4d7f9bbcba82420d Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-2
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 3.9kW
Produkt ist nicht verfügbar
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FF300R12KE4HOSA1 INFINEON TECHNOLOGIES Infineon-FF300R12KE4-DS-v02_01-en_de.pdf?fileId=db3a3043156fd57301161a3fed3c1e00 Category: IGBT modules
Description: Module: IGBT
auf Bestellung 10 Stücke:
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10+152.12 EUR
Mindestbestellmenge: 10
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IPA65R650CEXKSA1 IPA65R650CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2E2F54B0DD1BF&compId=IPA65R650CE-DTE.pdf?ci_sign=2a62d78fe10808ff5baf4319fa8a6c11b583d570 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
Kind of package: tube
auf Bestellung 111 Stücke:
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56+1.29 EUR
90+0.8 EUR
111+0.64 EUR
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IPA60R650CEXKSA1 IPA60R650CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D86E790811BF&compId=IPA60R650CE-DTE.pdf?ci_sign=b48a70375863e2e7469ef2c4c15db26199e76ea3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
55+1.3 EUR
65+1.1 EUR
66+1.09 EUR
71+1.02 EUR
Mindestbestellmenge: 50
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Technology: CoolMOS™ CE
Mounting: SMD
Polarisation: unipolar
Drain current: 6.2A
Drain-source voltage: 600V
Gate charge: 20.5nC
On-state resistance: 0.65Ω
Pulsed drain current: 19A
Gate-source voltage: ±20V
Power dissipation: 82W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
90+0.8 EUR
93+0.77 EUR
101+0.71 EUR
102+0.7 EUR
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EVAL-IMM101T-046TOBO1 (SP004177752)
+2
 		EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658 Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Produkt ist nicht verfügbar
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TLE5028CXAID28HAMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: TLE5028CXAID28HAMA1
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
1500+4.69 EUR
Mindestbestellmenge: 1500
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BF2040E6814HTSA1 BF2040E6814HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8C6BF407458143&compId=BF2040.pdf?ci_sign=8ddd8e3e394ba0039b81be9437cdd764153593f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 40mA
Power dissipation: 0.2W
Case: SOT143
Gate-source voltage: ±10V
Kind of package: reel; tape
Kind of channel: depletion
Electrical mounting: SMT
Features of semiconductor devices: dual gate
Kind of transistor: RF
Open-loop gain: 23dB
Frequency: 800MHz
auf Bestellung 3790 Stücke:
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370+0.19 EUR
420+0.17 EUR
445+0.16 EUR
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IRFS4510TRLPBF INFINEON TECHNOLOGIES IRSDS13318-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 250A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871ECA86FD211C&compId=BSC070N10NS5-DTE.pdf?ci_sign=78d14c5b1e85b14ec539aab59c7c72f104d0d1c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
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S25FL512SAGBHAC13 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9216BA914DB1CC&compId=BSP316PH6327XTSA1-dte.pdf?ci_sign=24f11e30d9b56cd6b2e9295c8abcb5ffab3097fa Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 730 Stücke:
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136+0.53 EUR
169+0.42 EUR
186+0.39 EUR
211+0.34 EUR
223+0.32 EUR
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IRF1018EPBF IRF1018EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A72F1A6F5005056AB5A8F&compId=irf1018epbf.pdf?ci_sign=9421567cb65140505372d9bbe28ae392c50f1431 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 46nC
auf Bestellung 611 Stücke:
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43+1.7 EUR
64+1.12 EUR
70+1.03 EUR
133+0.54 EUR
141+0.51 EUR
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BCR148SH6327 BCR148SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 100MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
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380+0.19 EUR
515+0.14 EUR
575+0.12 EUR
740+0.097 EUR
785+0.092 EUR
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BCR183E6433HTMA1 INFINEON TECHNOLOGIES bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SC59; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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T560N16TOFXPSA1 T560N16TOFXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD799E02A0720C7&compId=T560N.pdf?ci_sign=f6ca51bfc40228aaf083e8bbcf0295fb3dd68388 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
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BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD621C4D4F815EA&compId=BFN26.pdf?ci_sign=e3adbc099da16bcbcf1dd844a6cec75fe008b8ed Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 5999 Stücke:
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455+0.16 EUR
521+0.14 EUR
575+0.12 EUR
878+0.082 EUR
926+0.077 EUR
3000+0.074 EUR
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XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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XMC1302Q024X0064ABXUMA1 XMC1302Q024X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
Produkt ist nicht verfügbar
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XMC1302Q040X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1404Q048X0064AAXUMA1 XMC1404Q048X0064AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
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XMC1201Q040F0200ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1202Q040X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 26
Produkt ist nicht verfügbar
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XMC1202T016X0032ABXUMA1 XMC1202T016X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
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S70FL01GSAGBHBC10 INFINEON TECHNOLOGIES 002-00466%20Rev%20J.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF1324PBF IRF1324PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57AA3F1A6F5005056AB5A8F&compId=irf1324pbf.pdf?ci_sign=acd484969284c33c68b4f85f5b08d355fbc80d72 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 1.5mΩ
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Kind of package: tube
auf Bestellung 102 Stücke:
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26+2.77 EUR
38+1.9 EUR
40+1.8 EUR
100+1.77 EUR
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AUIRF1324STRL AUIRF1324STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3A3FAA0BC9C7969E4&compId=AUIRF1324STRL.pdf?ci_sign=27b5c15d4666262949c44068c31395577e196a0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF1324WL AUIRF1324WL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458231F46DF1A6F5005056AB5A8F&compId=auirf1324wl.pdf?ci_sign=ee1cb2e176d095f29d80ce110d4f3ed9bce65211 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED2181S06FXUMA1 2ED2181S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2181-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d75bd229f3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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2ED21844S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2184-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d76cf229fb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6D4F1A6F5005056AB5A8F&compId=irfs3307.pdf?ci_sign=9ae472c6c10abe8d437b7f6a48b6c6d21a14915d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 108 Stücke:
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26+2.76 EUR
31+2.33 EUR
38+1.93 EUR
51+1.42 EUR
54+1.33 EUR
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BCR402WH6327XTSA1 BCR402WH6327XTSA1 INFINEON TECHNOLOGIES bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
auf Bestellung 3000 Stücke:
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93+0.77 EUR
391+0.18 EUR
443+0.16 EUR
506+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 93
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IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAE3C6D9A9811C&compId=IPD12CN10NG-DTE.pdf?ci_sign=0d8e8162afb7cbafb80d8d63fdd14464e9327014 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1832 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
34+2.13 EUR
43+1.7 EUR
56+1.29 EUR
59+1.22 EUR
100+1.19 EUR
Mindestbestellmenge: 32
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XMC4400F64F256ABXQMA1 XMC4400F64F256ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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XMC4400F64K512ABXQSA1 XMC4400F64K512ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4402F64F256ABXQMA1 XMC4402F64F256ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BTS6142D BTS6142D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869881384811A469&compId=BTS6142D.pdf?ci_sign=02995c4c3dbb2ea686ef0e93c3cf02dd49ebf510 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 7A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...38V DC
Kind of output: N-Channel
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
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IRF7458TRPBF IRF7458TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3EE4837A6F1A303005056AB0C4F&compId=irf7458pbf.pdf?ci_sign=56212f9e3029cce24a6f1a3cb263f85754f8eaae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+2 EUR
Mindestbestellmenge: 800
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IPP020N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.95 EUR
12+6.26 EUR
15+4.8 EUR
16+4.53 EUR
Mindestbestellmenge: 11
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1EDS5663HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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BTS3800SL pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E30B5066C469&compId=BTS3800SL.pdf?ci_sign=cf2798fc7085ad14eef5f0487446413b0d9150bf
BTS3800SL
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Case: PG-SCT595
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Technology: HITFET®
Kind of output: N-Channel
Turn-off time: 3µs
Turn-on time: 3µs
Output current: 0.35A
On-state resistance: 0.8Ω
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
62+1.16 EUR
74+0.98 EUR
136+0.53 EUR
144+0.5 EUR
Mindestbestellmenge: 38
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IPB100N06S2L05ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33ABC275D4143&compId=IPB100N06S2L05.pdf?ci_sign=ed9a21125ac2c67384789464ad8f62978609982b
IPB100N06S2L05ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB100N06S205ATMA4 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA32C6912322143&compId=IPB100N06S205.pdf?ci_sign=cd8570fdde39d441592cb3a22ab9f2932d43b8c5
IPB100N06S205ATMA4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPP052N06L3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98E023A9B411C&compId=IPP052N06L3G-DTE.pdf?ci_sign=8a5b95f3a4bf719a2bed0f802edb055a4b86c61e
IPP052N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
45+1.62 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 30
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TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 500mA; D2PAK-5; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Protection: overheating OTP
Application: automotive industry
Number of channels: 1
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.74 EUR
Mindestbestellmenge: 1000
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IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
153+0.47 EUR
Mindestbestellmenge: 45
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IPB60R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8968175445EF773D6&compId=IPB60R360P7.pdf?ci_sign=40ccf4ce5ead59d45d23717572646c4e08f7e2b7
IPB60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
Mindestbestellmenge: 53
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IPD60R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA49397A1FD2143&compId=IPD60R360P7.pdf?ci_sign=9e7e9500ebd8e602db7a1d94b31f61db7e493546
IPD60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPP015N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E964BC12BDC11C&compId=IPP015N04NG-DTE.pdf?ci_sign=e4e930fc62a0b08bfd25e00a3a3255eeba0cdc35
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Kind of package: tube
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IPB015N04LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA2FE9E0AFB2143&compId=IPB015N04LG.pdf?ci_sign=1a31c5b0016acfcba16c81af4f75670fe4ab153c
IPB015N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSB015N04NX3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2093198D6C11C&compId=BSB015N04NX3G-DTE.pdf?ci_sign=b7867ebe58cbd3b3d3056e88f49c277850dedf12
BSB015N04NX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5CA15F7D7A11C&compId=IPB015N04NG-DTE.pdf?ci_sign=a9024a78fb9752bb225a91352e84938b6e0a7202
IPB015N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF7606TRPBF pVersion=0046&contRep=ZT&docId=E221A7C9D225C7F1A303005056AB0C4F&compId=irf7606pbf.pdf?ci_sign=1c367cbf393a3a2237dfc8f4b42c4929181d01c6
IRF7606TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Mounting: SMD
Case: Micro8
Kind of package: reel
Type of transistor: P-MOSFET
Technology: HEXFET®
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE38DEF8FA44259&compId=ICE1HS01G-1.pdf?ci_sign=96815c7069c4d4ca3a0bb743e0a3848133bf4034
ICE1HS01G1XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
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BTS3134D pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697D586252BC469&compId=BTS3134D.pdf?ci_sign=388ee08463115f09af1d881eb48523bb1a4de87b
BTS3134D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of output: N-Channel
Number of channels: 1
Kind of integrated circuit: low-side
Output current: 3.5A
Output voltage: 42V
Case: TO252-3
Technology: HITFET®
Mounting: SMD
Produkt ist nicht verfügbar
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FZ600R12KS4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE894BC24492EF813D5&compId=FZ600R12KS4.pdf?ci_sign=a0460730c6d5a7ddfe7deaaf4d7f9bbcba82420d
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-2
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 3.9kW
Produkt ist nicht verfügbar
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FF300R12KE4HOSA1 Infineon-FF300R12KE4-DS-v02_01-en_de.pdf?fileId=db3a3043156fd57301161a3fed3c1e00
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+152.12 EUR
Mindestbestellmenge: 10
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IPA65R650CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2E2F54B0DD1BF&compId=IPA65R650CE-DTE.pdf?ci_sign=2a62d78fe10808ff5baf4319fa8a6c11b583d570
IPA65R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
Kind of package: tube
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
90+0.8 EUR
111+0.64 EUR
Mindestbestellmenge: 56
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IPA60R650CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D86E790811BF&compId=IPA60R650CE-DTE.pdf?ci_sign=b48a70375863e2e7469ef2c4c15db26199e76ea3
IPA60R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
55+1.3 EUR
65+1.1 EUR
66+1.09 EUR
71+1.02 EUR
Mindestbestellmenge: 50
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Technology: CoolMOS™ CE
Mounting: SMD
Polarisation: unipolar
Drain current: 6.2A
Drain-source voltage: 600V
Gate charge: 20.5nC
On-state resistance: 0.65Ω
Pulsed drain current: 19A
Gate-source voltage: ±20V
Power dissipation: 82W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
90+0.8 EUR
93+0.77 EUR
101+0.71 EUR
102+0.7 EUR
Mindestbestellmenge: 81
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EVAL-IMM101T-046TOBO1 (SP004177752) pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658
EVAL-IMM101T-046TOBO1 (SP004177752)
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Produkt ist nicht verfügbar
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TLE5028CXAID28HAMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TLE5028CXAID28HAMA1
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+4.69 EUR
Mindestbestellmenge: 1500
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BF2040E6814HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8C6BF407458143&compId=BF2040.pdf?ci_sign=8ddd8e3e394ba0039b81be9437cdd764153593f3
BF2040E6814HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 40mA
Power dissipation: 0.2W
Case: SOT143
Gate-source voltage: ±10V
Kind of package: reel; tape
Kind of channel: depletion
Electrical mounting: SMT
Features of semiconductor devices: dual gate
Kind of transistor: RF
Open-loop gain: 23dB
Frequency: 800MHz
auf Bestellung 3790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
255+0.28 EUR
370+0.19 EUR
420+0.17 EUR
445+0.16 EUR
Mindestbestellmenge: 255
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 250A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC070N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871ECA86FD211C&compId=BSC070N10NS5-DTE.pdf?ci_sign=78d14c5b1e85b14ec539aab59c7c72f104d0d1c2
BSC070N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL512SAGBHAC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BSP316PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9216BA914DB1CC&compId=BSP316PH6327XTSA1-dte.pdf?ci_sign=24f11e30d9b56cd6b2e9295c8abcb5ffab3097fa
BSP316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
169+0.42 EUR
186+0.39 EUR
211+0.34 EUR
223+0.32 EUR
Mindestbestellmenge: 136
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IRF1018EPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A72F1A6F5005056AB5A8F&compId=irf1018epbf.pdf?ci_sign=9421567cb65140505372d9bbe28ae392c50f1431
IRF1018EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 46nC
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
64+1.12 EUR
70+1.03 EUR
133+0.54 EUR
141+0.51 EUR
Mindestbestellmenge: 43
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BCR148SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276
BCR148SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 100MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
515+0.14 EUR
575+0.12 EUR
740+0.097 EUR
785+0.092 EUR
Mindestbestellmenge: 380
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BCR183E6433HTMA1 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SC59; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.047 EUR
Mindestbestellmenge: 10000
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T560N16TOFXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD799E02A0720C7&compId=T560N.pdf?ci_sign=f6ca51bfc40228aaf083e8bbcf0295fb3dd68388
T560N16TOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+155.41 EUR
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BFN26E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD621C4D4F815EA&compId=BFN26.pdf?ci_sign=e3adbc099da16bcbcf1dd844a6cec75fe008b8ed
BFN26E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 5999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
521+0.14 EUR
575+0.12 EUR
878+0.082 EUR
926+0.077 EUR
3000+0.074 EUR
Mindestbestellmenge: 455
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XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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XMC1302Q024X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1302Q024X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
Produkt ist nicht verfügbar
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XMC1302Q040X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1404Q048X0064AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1404Q048X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1202Q040X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 26
Produkt ist nicht verfügbar
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XMC1202T016X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T016X0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
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S70FL01GSAGBHBC10 002-00466%20Rev%20J.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1324PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57AA3F1A6F5005056AB5A8F&compId=irf1324pbf.pdf?ci_sign=acd484969284c33c68b4f85f5b08d355fbc80d72
IRF1324PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 1.5mΩ
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
38+1.9 EUR
40+1.8 EUR
100+1.77 EUR
Mindestbestellmenge: 26
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AUIRF1324STRL pVersion=0046&contRep=ZT&docId=005056AB752F1ED3A3FAA0BC9C7969E4&compId=AUIRF1324STRL.pdf?ci_sign=27b5c15d4666262949c44068c31395577e196a0d
AUIRF1324STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF1324WL pVersion=0046&contRep=ZT&docId=E1C0458231F46DF1A6F5005056AB5A8F&compId=auirf1324wl.pdf?ci_sign=ee1cb2e176d095f29d80ce110d4f3ed9bce65211
AUIRF1324WL
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED2181S06FXUMA1 Infineon-2ED2181-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d75bd229f3
2ED2181S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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2ED21844S06JXUMA1 Infineon-2ED2184-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d76cf229fb
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
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IRFB3307PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6D4F1A6F5005056AB5A8F&compId=irfs3307.pdf?ci_sign=9ae472c6c10abe8d437b7f6a48b6c6d21a14915d
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
31+2.33 EUR
38+1.93 EUR
51+1.42 EUR
54+1.33 EUR
Mindestbestellmenge: 26
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BCR402WH6327XTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
391+0.18 EUR
443+0.16 EUR
506+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 93
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IPD12CN10NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAE3C6D9A9811C&compId=IPD12CN10NG-DTE.pdf?ci_sign=0d8e8162afb7cbafb80d8d63fdd14464e9327014
IPD12CN10NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1832 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
34+2.13 EUR
43+1.7 EUR
56+1.29 EUR
59+1.22 EUR
100+1.19 EUR
Mindestbestellmenge: 32
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XMC4400F64F256ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F64F256ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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XMC4400F64K512ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F64K512ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4402F64F256ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4402F64F256ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BTS6142D pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869881384811A469&compId=BTS6142D.pdf?ci_sign=02995c4c3dbb2ea686ef0e93c3cf02dd49ebf510
BTS6142D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 7A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...38V DC
Kind of output: N-Channel
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
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IRF7458TRPBF pVersion=0046&contRep=ZT&docId=E221A3EE4837A6F1A303005056AB0C4F&compId=irf7458pbf.pdf?ci_sign=56212f9e3029cce24a6f1a3cb263f85754f8eaae
IRF7458TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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