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IPP048N04NGXKSA1 IPP048N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E993296386811C&compId=IPP048N04NG-DTE.pdf?ci_sign=8e6fab273f650bbf26b7fc696887f5f44527a3d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4207GXUMA2 TLE4207GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF2B14155202745&compId=TLE4207G.pdf?ci_sign=fe0125a4b300ae58a3cda1acbb44855e4d17b0aa Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
54+1.33 EUR
55+1.32 EUR
57+1.26 EUR
58+1.24 EUR
100+1.2 EUR
Mindestbestellmenge: 52
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IRFR24N15DTRPBF IRFR24N15DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEF7D18E015EA&compId=IRFR24N15DTRPBF.pdf?ci_sign=ea45edf9f549a5715b095bc03e8c0b797eaf525c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1752E50D38749&compId=IPP60R120P7.pdf?ci_sign=db5d6da5af7792cb5fe3e97f682fefdab165ae7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: D2PAK
Produkt ist nicht verfügbar
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IPW60R120P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf045c0225 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
30+3.15 EUR
Mindestbestellmenge: 30
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BTS70302EPAXUMA1 BTS70302EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Technology: PROFET™+2
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
Output current: 4.5A
On-state resistance: 25mΩ
Number of channels: 2
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
auf Bestellung 2969 Stücke:
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25+2.9 EUR
26+2.79 EUR
44+1.63 EUR
Mindestbestellmenge: 25
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BSC0902NSIATMA1 BSC0902NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38756DA3E34011C&compId=BSC0902NSI-DTE.pdf?ci_sign=63f92bce853f2e97e3e40f57262a8a89d6710ac4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
73+0.98 EUR
81+0.89 EUR
95+0.76 EUR
104+0.69 EUR
Mindestbestellmenge: 63
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BSC0909NSATMA1 BSC0909NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875CDD9985211C&compId=BSC0909NS-DTE.pdf?ci_sign=3419b4f3de333acd915c15565b124484cd2d6348 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 403 Stücke:
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73+0.99 EUR
100+0.72 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 73
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3813 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
35+2.1 EUR
36+1.99 EUR
41+1.77 EUR
66+1.09 EUR
71+1.02 EUR
1000+0.99 EUR
Mindestbestellmenge: 32
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
38+1.89 EUR
47+1.53 EUR
50+1.44 EUR
250+1.39 EUR
Mindestbestellmenge: 27
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BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DBADED761611C&compId=BSC340N08NS3G-DTE.pdf?ci_sign=aa9b337a0db21dfe8f5ac636b1ed5ff1110c9458 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5291 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
104+0.69 EUR
214+0.33 EUR
227+0.32 EUR
5000+0.3 EUR
Mindestbestellmenge: 85
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BSC093N04LSGATMA1 BSC093N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38795A97469411C&compId=BSC093N04LSG-DTE.pdf?ci_sign=1048a566bfd8c900fb6791183d0b42909927a73e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3718 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
127+0.56 EUR
139+0.52 EUR
Mindestbestellmenge: 95
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387420481F9A11C&compId=BSC080N03MSG-DTE.pdf?ci_sign=67d4652ce5e7611550106b6c964b5ad6af114d39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1692 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
133+0.54 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 100
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BSC0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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BSC0902NSATMA1 BSC0902NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875541E9DFA11C&compId=BSC0902NS-DTE.pdf?ci_sign=203977e4a66c3f26c2bd7c796245641d42955b1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC097N06NSATMA1 BSC097N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387970BDE37411C&compId=BSC097N06NS-DTE.pdf?ci_sign=c5a024af0890efb681719e6169d21bdfa1fda0cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0901NSIATMA1 BSC0901NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874DAA9396E11C&compId=BSC0901NSI-DTE.pdf?ci_sign=1a6e993ca51164ce3845b282c744d47c054d2816 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 BSC009NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C232ADC6DE811C&compId=BSC009NE2LS-DTE.pdf?ci_sign=474c14cd09ac2b54f5c408db185963e09191a5c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010NE2LSATMA1 BSC010NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD29AC7BFD011C&compId=BSC010NE2LS-DTE.pdf?ci_sign=4037dffe638488c62f3a77b32205acbf9b96de48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD40EAD5E9A11C&compId=BSC010NE2LSI-DTE.pdf?ci_sign=ab0e926d776d7e5a1947b6a42d0ee3b7e575e2bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C261A139DAE11C&compId=BSC014NE2LSI-DTE.pdf?ci_sign=0a69ffadf1ecef5f2deecb3baae5b5493d0cb0ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC019N04LSATMA1 BSC019N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C276C164B8C11C&compId=BSC019N04LS-DTE.pdf?ci_sign=24f98007f7062467d0d86250c8fc347c8ca5891a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC022N04LSATMA1 BSC022N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C27F07B750811C&compId=BSC022N04LS-dte.pdf?ci_sign=125ecfb34873602b4a13f421a132720c70763d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC026N04LSATMA1 BSC026N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050NE2LSATMA1 BSC050NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD915914BBA11C&compId=BSC050NE2LS-dte.pdf?ci_sign=9758965f29efc39e420dce08de5d90c53062993f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0901NSATMA1 BSC0901NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874C74A719211C&compId=BSC0901NS-DTE.pdf?ci_sign=c4ca8f01c906c426307c8d2a8a0a879bd446b155 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0904NSIATMA1 BSC0904NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE49SR_EVALBOARD INFINEON TECHNOLOGIES Category: Unclassified
Description: TLE49SR_EVALBOARD
auf Bestellung 1 Stücke:
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1+207.42 EUR
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BFR193E6327 BFR193E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CF209426011C&compId=BFR193E6327-dte.pdf?ci_sign=4c5307a786cc21bca7483237e4b4a15904a55f4d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 2064 Stücke:
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179+0.4 EUR
226+0.32 EUR
350+0.2 EUR
486+0.15 EUR
511+0.14 EUR
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BFR193FH6327 BFR193FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D0E2A79A611C&compId=BFR193FH6327-dte.pdf?ci_sign=36a79ff6ce9c25acd1f0aac379677a9982028e7d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
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264+0.27 EUR
336+0.21 EUR
472+0.15 EUR
618+0.12 EUR
658+0.11 EUR
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BFR193L3E6327 BFR193L3E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D61F8F1C611C&compId=BFR193L3E6327-dte.pdf?ci_sign=159eb82f3466f047c6bf832485697538eb140a55 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
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200+0.36 EUR
329+0.22 EUR
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IPP051N15N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.82 EUR
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BSS87H6327FTSA1 BSS87H6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84704B7FFF10B&compId=BSS87H6327FTSA1.pdf?ci_sign=f9330c95011fdd909fb6f9e38030ee639046a456 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Case: SOT89-4
Kind of channel: enhancement
auf Bestellung 653 Stücke:
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262+0.27 EUR
286+0.25 EUR
500+0.24 EUR
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BSP88H6327XTSA1 BSP88H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76899C50F310B&compId=BSP88H6327XTSA1.pdf?ci_sign=7f9ace14eab967c17352ef0016c7b9645cecf49a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Case: SOT223
Kind of channel: enhancement
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100+0.72 EUR
127+0.56 EUR
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IR2214SSPBF IR2214SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
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BSP295H6327XTSA1 BSP295H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A711EB905DB10B&compId=BSP295H6327XTSA1.pdf?ci_sign=12d54ca60e42968960e2526667870bf482146104 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Drain current: 1.8A
Gate-source voltage: ±20V
auf Bestellung 1046 Stücke:
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64+1.13 EUR
86+0.83 EUR
176+0.41 EUR
186+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 64
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IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DB4723ACC11C&compId=IPB029N06N3G-DTE.pdf?ci_sign=5f066976eb9802fc0a5a6395d77568296435c78e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 120A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 188W
Produkt ist nicht verfügbar
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IPI029N06NAKSA1 IPI029N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699443DDF97811C&compId=IPI029N06N-DTE.pdf?ci_sign=e39e3628720de44745f1a3030a66139a6d697760 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 100A
Case: PG-TO262-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 136W
Produkt ist nicht verfügbar
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IPP029N06NAKSA1 IPP029N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E994B5BD37011C&compId=IPP029N06NAKSA1-DTE.pdf?ci_sign=44f27abab4c8ca927c2abefa9665829d753d9b04 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 100A
Case: PG-TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 136W
Produkt ist nicht verfügbar
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IPP029N06NXKSA1 INFINEON TECHNOLOGIES Infineon-IPP029N06N-DS-v02_06-EN.pdf?fileId=db3a3043345a30bc013465bff03f62ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 100A
Case: TO220-3
Gate-source voltage: 20V
Mounting: THT
Gate charge: 66nC
auf Bestellung 200 Stücke:
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100+1.4 EUR
Mindestbestellmenge: 100
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IPB029N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB029N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67ca353b2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 120A; 150W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 60V
Drain current: 120A
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Electrical mounting: SMT
On-state resistance: 2.9mΩ
Power dissipation: 150W
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800+1.13 EUR
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IPA95R450P7XKSA1 IPA95R450P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9B7CCE93EF6143&compId=IPA95R450P7.pdf?ci_sign=b5017dd83b3f6c315c45a347e528ef15f2f64f93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 950V
Kind of package: tube
auf Bestellung 10 Stücke:
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10+7.15 EUR
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BTS5210G BTS5210G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698792116A06469&compId=BTS5210G.pdf?ci_sign=34a674fb634ae891218c8c260ba20409e1b33986 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
Gate charge: 39nC
On-state resistance: 65mΩ
Gate-source voltage: 20V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
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2500+0.79 EUR
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IRFR2307ZTRLPBF IRFR2307ZTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C139920DB3F1A303005056AB0C4F&compId=irfr2307zpbf.pdf?ci_sign=5a02cd30d3be63779fdc26a106cfb0d6acb4247b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1404Q064X0064AAXUMA1 XMC1404Q064X0064AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 55
Produkt ist nicht verfügbar
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AUIRFR2905ZTRL INFINEON TECHNOLOGIES auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 42A; 110W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 60000 Stücke:
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3000+1.37 EUR
Mindestbestellmenge: 3000
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IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B2B6150BC8F1A303005056AB0C4F&compId=irfb3006gpbf.pdf?ci_sign=fe50fde39a28df753a65cb90465a06d54c1f585e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.5Ω
Gate-source voltage: ±20V
Gate charge: 200nC
Technology: HEXFET®
Power dissipation: 375W
Produkt ist nicht verfügbar
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BSZ075N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1DB36696E11C&compId=BSZ075N08NS5-DTE.pdf?ci_sign=ea14860559aa7e61c2d27222f8be8bf43b4b6c42 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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CY8C4013SXI-411T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SOIC16
Type of integrated circuit: PSoC microcontroller
Case: SOIC16
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 12
Clock frequency: 16MHz
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.13 EUR
Mindestbestellmenge: 2500
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF99C3096888A143&compId=IPD95R450P7.pdf?ci_sign=0082607c363ab7b28ae784d1f635cccdd4fd5598 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 950V
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
29+2.47 EUR
33+2.17 EUR
35+2.06 EUR
37+1.97 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4A106E0F411C&compId=BSZ150N10LS3G-DTE.pdf?ci_sign=2fde45fc4d6ab9a87f8206295ac3e685a3111857 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 15mΩ
Power dissipation: 63W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70BHI310 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL032J70BHI313 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP048N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E993296386811C&compId=IPP048N04NG-DTE.pdf?ci_sign=8e6fab273f650bbf26b7fc696887f5f44527a3d6
IPP048N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4207GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF2B14155202745&compId=TLE4207G.pdf?ci_sign=fe0125a4b300ae58a3cda1acbb44855e4d17b0aa
TLE4207GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
54+1.33 EUR
55+1.32 EUR
57+1.26 EUR
58+1.24 EUR
100+1.2 EUR
Mindestbestellmenge: 52
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IRFR24N15DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEF7D18E015EA&compId=IRFR24N15DTRPBF.pdf?ci_sign=ea45edf9f549a5715b095bc03e8c0b797eaf525c
IRFR24N15DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1752E50D38749&compId=IPP60R120P7.pdf?ci_sign=db5d6da5af7792cb5fe3e97f682fefdab165ae7b
IPP60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R120P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R120P7XKSA1 Infineon-IPW60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf045c0225
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+3.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BTS70302EPAXUMA1 Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f
BTS70302EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Technology: PROFET™+2
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
Output current: 4.5A
On-state resistance: 25mΩ
Number of channels: 2
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.9 EUR
26+2.79 EUR
44+1.63 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BSC0902NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38756DA3E34011C&compId=BSC0902NSI-DTE.pdf?ci_sign=63f92bce853f2e97e3e40f57262a8a89d6710ac4
BSC0902NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
73+0.98 EUR
81+0.89 EUR
95+0.76 EUR
104+0.69 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BSC0909NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875CDD9985211C&compId=BSC0909NS-DTE.pdf?ci_sign=3419b4f3de333acd915c15565b124484cd2d6348
BSC0909NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
100+0.72 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
BSC030P03NS3GAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3813 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
35+2.1 EUR
36+1.99 EUR
41+1.77 EUR
66+1.09 EUR
71+1.02 EUR
1000+0.99 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BSC028N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0
BSC028N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
38+1.89 EUR
47+1.53 EUR
50+1.44 EUR
250+1.39 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BSC340N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DBADED761611C&compId=BSC340N08NS3G-DTE.pdf?ci_sign=aa9b337a0db21dfe8f5ac636b1ed5ff1110c9458
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
104+0.69 EUR
214+0.33 EUR
227+0.32 EUR
5000+0.3 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
BSC093N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38795A97469411C&compId=BSC093N04LSG-DTE.pdf?ci_sign=1048a566bfd8c900fb6791183d0b42909927a73e
BSC093N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
127+0.56 EUR
139+0.52 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
BSC080N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387420481F9A11C&compId=BSC080N03MSG-DTE.pdf?ci_sign=67d4652ce5e7611550106b6c964b5ad6af114d39
BSC080N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1692 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
133+0.54 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0902NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875541E9DFA11C&compId=BSC0902NS-DTE.pdf?ci_sign=203977e4a66c3f26c2bd7c796245641d42955b1d
BSC0902NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC097N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387970BDE37411C&compId=BSC097N06NS-DTE.pdf?ci_sign=c5a024af0890efb681719e6169d21bdfa1fda0cf
BSC097N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0901NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874DAA9396E11C&compId=BSC0901NSI-DTE.pdf?ci_sign=1a6e993ca51164ce3845b282c744d47c054d2816
BSC0901NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C232ADC6DE811C&compId=BSC009NE2LS-DTE.pdf?ci_sign=474c14cd09ac2b54f5c408db185963e09191a5c0
BSC009NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD29AC7BFD011C&compId=BSC010NE2LS-DTE.pdf?ci_sign=4037dffe638488c62f3a77b32205acbf9b96de48
BSC010NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD40EAD5E9A11C&compId=BSC010NE2LSI-DTE.pdf?ci_sign=ab0e926d776d7e5a1947b6a42d0ee3b7e575e2bc
BSC010NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C261A139DAE11C&compId=BSC014NE2LSI-DTE.pdf?ci_sign=0a69ffadf1ecef5f2deecb3baae5b5493d0cb0ab
BSC014NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C276C164B8C11C&compId=BSC019N04LS-DTE.pdf?ci_sign=24f98007f7062467d0d86250c8fc347c8ca5891a
BSC019N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC022N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C27F07B750811C&compId=BSC022N04LS-dte.pdf?ci_sign=125ecfb34873602b4a13f421a132720c70763d0b
BSC022N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba
BSC026N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026NE2LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94
BSC026NE2LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC032NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc
BSC032NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD915914BBA11C&compId=BSC050NE2LS-dte.pdf?ci_sign=9758965f29efc39e420dce08de5d90c53062993f
BSC050NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0901NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874C74A719211C&compId=BSC0901NS-DTE.pdf?ci_sign=c4ca8f01c906c426307c8d2a8a0a879bd446b155
BSC0901NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0904NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92
BSC0904NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE49SR_EVALBOARD
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TLE49SR_EVALBOARD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+207.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BFR193E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CF209426011C&compId=BFR193E6327-dte.pdf?ci_sign=4c5307a786cc21bca7483237e4b4a15904a55f4d
BFR193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 2064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
226+0.32 EUR
350+0.2 EUR
486+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BFR193FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D0E2A79A611C&compId=BFR193FH6327-dte.pdf?ci_sign=36a79ff6ce9c25acd1f0aac379677a9982028e7d
BFR193FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 1346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
336+0.21 EUR
472+0.15 EUR
618+0.12 EUR
658+0.11 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BFR193L3E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D61F8F1C611C&compId=BFR193L3E6327-dte.pdf?ci_sign=159eb82f3466f047c6bf832485697538eb140a55
BFR193L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
329+0.22 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IPP051N15N5XKSA1 Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.82 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSS87H6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84704B7FFF10B&compId=BSS87H6327FTSA1.pdf?ci_sign=f9330c95011fdd909fb6f9e38030ee639046a456
BSS87H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Case: SOT89-4
Kind of channel: enhancement
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
210+0.34 EUR
262+0.27 EUR
286+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BSP88H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76899C50F310B&compId=BSP88H6327XTSA1.pdf?ci_sign=7f9ace14eab967c17352ef0016c7b9645cecf49a
BSP88H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Case: SOT223
Kind of channel: enhancement
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
127+0.56 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IR2214SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2214SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.26 EUR
11+6.51 EUR
Mindestbestellmenge: 10
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BSP295H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A711EB905DB10B&compId=BSP295H6327XTSA1.pdf?ci_sign=12d54ca60e42968960e2526667870bf482146104
BSP295H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Drain current: 1.8A
Gate-source voltage: ±20V
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
86+0.83 EUR
176+0.41 EUR
186+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IPB029N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DB4723ACC11C&compId=IPB029N06N3G-DTE.pdf?ci_sign=5f066976eb9802fc0a5a6395d77568296435c78e
IPB029N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 120A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 188W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI029N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699443DDF97811C&compId=IPI029N06N-DTE.pdf?ci_sign=e39e3628720de44745f1a3030a66139a6d697760
IPI029N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 100A
Case: PG-TO262-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 136W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP029N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E994B5BD37011C&compId=IPP029N06NAKSA1-DTE.pdf?ci_sign=44f27abab4c8ca927c2abefa9665829d753d9b04
IPP029N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 100A
Case: PG-TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 136W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP029N06NXKSA1 Infineon-IPP029N06N-DS-v02_06-EN.pdf?fileId=db3a3043345a30bc013465bff03f62ec
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 100A
Case: TO220-3
Gate-source voltage: 20V
Mounting: THT
Gate charge: 66nC
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.4 EUR
Mindestbestellmenge: 100
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IPB029N06NF2SATMA1 Infineon-IPB029N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67ca353b2d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 120A; 150W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 60V
Drain current: 120A
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Electrical mounting: SMT
On-state resistance: 2.9mΩ
Power dissipation: 150W
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.13 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPA95R450P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9B7CCE93EF6143&compId=IPA95R450P7.pdf?ci_sign=b5017dd83b3f6c315c45a347e528ef15f2f64f93
IPA95R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 950V
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BTS5210G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698792116A06469&compId=BTS5210G.pdf?ci_sign=34a674fb634ae891218c8c260ba20409e1b33986
BTS5210G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
Gate charge: 39nC
On-state resistance: 65mΩ
Gate-source voltage: 20V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2307ZTRLPBF pVersion=0046&contRep=ZT&docId=E221C139920DB3F1A303005056AB0C4F&compId=irfr2307zpbf.pdf?ci_sign=5a02cd30d3be63779fdc26a106cfb0d6acb4247b
IRFR2307ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1404Q064X0064AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1404Q064X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 55
Produkt ist nicht verfügbar
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AUIRFR2905ZTRL auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 42A; 110W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.37 EUR
Mindestbestellmenge: 3000
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IRFB3006GPBF pVersion=0046&contRep=ZT&docId=E221B2B6150BC8F1A303005056AB0C4F&compId=irfb3006gpbf.pdf?ci_sign=fe50fde39a28df753a65cb90465a06d54c1f585e
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.5Ω
Gate-source voltage: ±20V
Gate charge: 200nC
Technology: HEXFET®
Power dissipation: 375W
Produkt ist nicht verfügbar
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BSZ075N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1DB36696E11C&compId=BSZ075N08NS5-DTE.pdf?ci_sign=ea14860559aa7e61c2d27222f8be8bf43b4b6c42
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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CY8C4013SXI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SOIC16
Type of integrated circuit: PSoC microcontroller
Case: SOIC16
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 12
Clock frequency: 16MHz
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.13 EUR
Mindestbestellmenge: 2500
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IPD95R450P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF99C3096888A143&compId=IPD95R450P7.pdf?ci_sign=0082607c363ab7b28ae784d1f635cccdd4fd5598
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 950V
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
29+2.47 EUR
33+2.17 EUR
35+2.06 EUR
37+1.97 EUR
Mindestbestellmenge: 25
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AUIRF2804L pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde
AUIRF2804L
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4A106E0F411C&compId=BSZ150N10LS3G-DTE.pdf?ci_sign=2fde45fc4d6ab9a87f8206295ac3e685a3111857
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 15mΩ
Power dissipation: 63W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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S29JL032J70BHI310 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29JL032J70BHI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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