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BC856SH6327 BC856SH6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
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278+0.26 EUR
365+0.2 EUR
557+0.13 EUR
746+0.096 EUR
1000+0.086 EUR
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES BSP170PH6327XTSA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1142 Stücke:
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63+1.14 EUR
94+0.76 EUR
128+0.56 EUR
145+0.5 EUR
200+0.44 EUR
500+0.38 EUR
1000+0.34 EUR
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 IGW25T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
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IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
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IPD90N04S405ATMA1 IPD90N04S405ATMA1 INFINEON TECHNOLOGIES IPD90N04S405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 65W
Drain current: 61A
Pulsed drain current: 344A
Technology: OptiMOS™ T2
Gate charge: 18nC
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES IPD068P03L3GATMA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Gate-source voltage: ±20V
Power dissipation: 100W
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPA07N60C3 SPA07N60C3 INFINEON TECHNOLOGIES SPA07N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 68 Stücke:
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40+1.8 EUR
51+1.42 EUR
66+1.09 EUR
68+1.06 EUR
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SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES SPx07N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 127 Stücke:
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67+1.07 EUR
76+0.94 EUR
84+0.86 EUR
90+0.8 EUR
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IPB025N10N3GATMA1 IPB025N10N3GATMA1 INFINEON TECHNOLOGIES IPB025N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 62 Stücke:
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12+6.13 EUR
14+5.48 EUR
16+4.52 EUR
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IMW65R107M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhancement
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IMZA65R107M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247-4
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9965511A9A11C&compId=IPP020N06NAKSA1-DTE.pdf?ci_sign=83fbe3c4ddd538ca4cd145e6a0d205e58922a5e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N06NATMA1 IPB014N06NATMA1 INFINEON TECHNOLOGIES IPB014N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.4mΩ
Drain current: 180A
Drain-source voltage: 60V
Power dissipation: 214W
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 47 Stücke:
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17+4.35 EUR
18+3.99 EUR
23+3.2 EUR
26+2.83 EUR
Mindestbestellmenge: 17
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IPB034N06L3GATMA1 IPB034N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E22AC82A411C&compId=IPB034N06L3G-DTE.pdf?ci_sign=e2d349a57cd9a28e9c7dbde0c8d7a4b00ed0cf76 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRLR8256TRPBF IRLR8256TRPBF INFINEON TECHNOLOGIES irlr8256pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AIGW40N65F5XKSA1 AIGW40N65F5XKSA1 INFINEON TECHNOLOGIES AIGW40N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 177 Stücke:
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14+5.21 EUR
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 INFINEON TECHNOLOGIES AIGW40N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 161 Stücke:
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9+8.82 EUR
11+6.94 EUR
30+6.38 EUR
60+6.05 EUR
90+5.91 EUR
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AIKW40N65DF5XKSA1 AIKW40N65DF5XKSA1 INFINEON TECHNOLOGIES AIKW40N65DF5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
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AIKW40N65DH5XKSA1 AIKW40N65DH5XKSA1 INFINEON TECHNOLOGIES AIKW40N65DH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IRFH5010TRPBF IRFH5010TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B4FD5221A9F1A303005056AB0C4F&compId=irfh5010pbf.pdf?ci_sign=dc0d60716a5924fc56a535cd67f663c50e1ec509 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5015TRPBF IRFH5015TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B51A9A0F40F1A303005056AB0C4F&compId=irfh5015pbf.pdf?ci_sign=eb6ae4a5494ec8a6c1560e3bc7b19829447ecba1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1 INFINEON TECHNOLOGIES AIKW50N65DH5XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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AIKW50N65DF5XKSA1 AIKW50N65DF5XKSA1 INFINEON TECHNOLOGIES AIKW50N65DF5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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BTS4141N BTS4141N INFINEON TECHNOLOGIES BTS4141N.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
Kind of output: N-Channel
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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IRG4BC40W-STRRP IRG4BC40W-STRRP INFINEON TECHNOLOGIES IRG4BC40W-STRRP.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
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IRL530NSTRLPBF IRL530NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22275DBBD2C88F1A303005056AB0C4F&compId=irl530nspbf.pdf?ci_sign=4b011cbadfca1f27978a0c2fa18b673b18bbb418 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Technology: HEXFET®
Gate-source voltage: ±20V
Features of semiconductor devices: logic level
Kind of channel: enhancement
auf Bestellung 4005 Stücke:
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41+1.77 EUR
59+1.22 EUR
73+0.99 EUR
100+0.89 EUR
250+0.77 EUR
500+0.68 EUR
800+0.61 EUR
1600+0.53 EUR
Mindestbestellmenge: 41
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IRFR1205TRPBF IRFR1205TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C020074448F1A303005056AB0C4F&compId=irfr1205pbf.pdf?ci_sign=ebd78e3c793ea692537d498167bbd2ef9f3ad95b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Power dissipation: 107W
Drain-source voltage: 55V
Type of transistor: N-MOSFET
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
153+0.47 EUR
162+0.44 EUR
178+0.4 EUR
191+0.38 EUR
205+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 120
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IRFSL7437PBF IRFSL7437PBF INFINEON TECHNOLOGIES irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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29+2.55 EUR
46+1.56 EUR
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AIGW50N65F5XKSA1 AIGW50N65F5XKSA1 INFINEON TECHNOLOGIES AIGW50N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES SPx21N50C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
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16+4.46 EUR
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BTS428L2 BTS428L2 INFINEON TECHNOLOGIES BTS428L2.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Technology: Classic PROFET; SIPMOS™
Output voltage: 4.75...41V
Kind of output: N-Channel
auf Bestellung 2283 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.49 EUR
20+3.68 EUR
100+2.97 EUR
250+2.7 EUR
500+2.5 EUR
1000+2.49 EUR
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BTS441TG BTS441TG INFINEON TECHNOLOGIES BTS441TG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Kind of output: N-Channel
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.33 EUR
18+4.05 EUR
100+3.59 EUR
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IRFB3207ZGPBF IRFB3207ZGPBF INFINEON TECHNOLOGIES irfb3207zgpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3207ZPBF IRFB3207ZPBF INFINEON TECHNOLOGIES irfs3207zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
37+1.96 EUR
43+1.69 EUR
50+1.47 EUR
Mindestbestellmenge: 33
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IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B705F1A6F5005056AB5A8F&compId=irfb4019pbf.pdf?ci_sign=35a3c85c464dacc468771d93b7f858d4900a1526 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1078 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
45+1.6 EUR
51+1.42 EUR
59+1.22 EUR
100+1.01 EUR
250+0.76 EUR
500+0.64 EUR
750+0.63 EUR
Mindestbestellmenge: 41
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BSS138WH6327XTSA1 BSS138WH6327XTSA1 INFINEON TECHNOLOGIES BSS138WH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
668+0.11 EUR
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BSS138WH6433XTMA1 BSS138WH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.12A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4020PBF IRFB4020PBF INFINEON TECHNOLOGIES irfb4020pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.1Ω
Gate charge: 18nC
Gate-source voltage: ±20V
Power dissipation: 100W
Technology: HEXFET®
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
66+1.09 EUR
Mindestbestellmenge: 51
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IRFS7530TRL7PP IRFS7530TRL7PP INFINEON TECHNOLOGIES irfs7530-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.62 EUR
26+2.85 EUR
28+2.56 EUR
100+2.16 EUR
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IRS2184PBF IRS2184PBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
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AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB1C37C3CAD820&compId=AIKW75N60CT.pdf?ci_sign=30f321bc96abbc3e7898d3a39c8acc9ee7412c40 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Gate charge: 470nC
Turn-on time: 69ns
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Collector current: 75A
Power dissipation: 428W
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Case: TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Technology: TRENCHSTOP™
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4510PBF IRFB4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA418D2E1B5EA&compId=IRFB4510PBF.pdf?ci_sign=9339082daf1e6b0bfcc37dddedca7d1124a64194 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
62+1.16 EUR
69+1.04 EUR
75+0.96 EUR
100+0.89 EUR
200+0.82 EUR
Mindestbestellmenge: 55
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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70 description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
95+0.76 EUR
106+0.68 EUR
124+0.58 EUR
150+0.57 EUR
Mindestbestellmenge: 84
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES SMBT3904SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
Mindestbestellmenge: 88
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AIKW20N60CTXKSA1 AIKW20N60CTXKSA1 INFINEON TECHNOLOGIES AIKW20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IRLR8103VTRPBF IRLR8103VTRPBF INFINEON TECHNOLOGIES irlr8103vpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFB4615PBF IRFB4615PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A76F1A6F5005056AB5A8F&compId=irfb4615pbf.pdf?ci_sign=b017e04afb02e0c37365c5a851437e30722be4bc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.93 EUR
Mindestbestellmenge: 37
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IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES irfml8244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 4913 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
302+0.24 EUR
345+0.21 EUR
544+0.13 EUR
705+0.1 EUR
1000+0.093 EUR
3000+0.09 EUR
Mindestbestellmenge: 250
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BCR185WH6327 BCR185WH6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
769+0.093 EUR
Mindestbestellmenge: 769
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IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1352 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
40+1.82 EUR
50+1.6 EUR
100+1.53 EUR
250+1.44 EUR
1000+1.43 EUR
Mindestbestellmenge: 33
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AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 INFINEON TECHNOLOGIES AIGW50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 INFINEON TECHNOLOGIES AIKP20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
17+4.43 EUR
18+3.98 EUR
50+3.7 EUR
250+3.69 EUR
Mindestbestellmenge: 15
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AIKB20N60CTATMA1 AIKB20N60CTATMA1 INFINEON TECHNOLOGIES AIKB20N60CT.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IKQ120N60TXKSA1 INFINEON TECHNOLOGIES IKQ120N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES IRFR15N20DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BC856SH6327 BC856UE6327.pdf
BC856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
365+0.2 EUR
557+0.13 EUR
746+0.096 EUR
1000+0.086 EUR
Mindestbestellmenge: 278
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BSP170PH6327XTSA1 BSP170PH6327XTSA1-DTE.PDF
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
94+0.76 EUR
128+0.56 EUR
145+0.5 EUR
200+0.44 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 63
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IRS21864SPBF irs2186pbf.pdf
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3
IGW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IRL7833STRLPBF pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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IPD90N04S405ATMA1 IPD90N04S405.pdf
IPD90N04S405ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 65W
Drain current: 61A
Pulsed drain current: 344A
Technology: OptiMOS™ T2
Gate charge: 18nC
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1.pdf
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Gate-source voltage: ±20V
Power dissipation: 100W
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3G-DTE.pdf
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPA07N60C3 description SPA07N60C3.pdf
SPA07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
51+1.42 EUR
66+1.09 EUR
68+1.06 EUR
Mindestbestellmenge: 40
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SPP07N60C3 SPx07N60C3.pdf
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
76+0.94 EUR
84+0.86 EUR
90+0.8 EUR
Mindestbestellmenge: 67
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IPB025N10N3GATMA1 IPB025N10N3G-DTE.pdf
IPB025N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
14+5.48 EUR
16+4.52 EUR
Mindestbestellmenge: 12
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IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247-4
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9965511A9A11C&compId=IPP020N06NAKSA1-DTE.pdf?ci_sign=83fbe3c4ddd538ca4cd145e6a0d205e58922a5e7
IPP020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N06NATMA1 IPB014N06N-DTE.pdf
IPB014N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.4mΩ
Drain current: 180A
Drain-source voltage: 60V
Power dissipation: 214W
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
18+3.99 EUR
23+3.2 EUR
26+2.83 EUR
Mindestbestellmenge: 17
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IPB034N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E22AC82A411C&compId=IPB034N06L3G-DTE.pdf?ci_sign=e2d349a57cd9a28e9c7dbde0c8d7a4b00ed0cf76
IPB034N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRLR8256TRPBF irlr8256pbf.pdf
IRLR8256TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AIGW40N65F5XKSA1 AIGW40N65F5.pdf
AIGW40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AIGW40N65H5XKSA1 AIGW40N65H5.pdf
AIGW40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.82 EUR
11+6.94 EUR
30+6.38 EUR
60+6.05 EUR
90+5.91 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
AIKW40N65DF5XKSA1 AIKW40N65DF5.pdf
AIKW40N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW40N65DH5XKSA1 AIKW40N65DH5.pdf
AIKW40N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5010TRPBF pVersion=0046&contRep=ZT&docId=E221B4FD5221A9F1A303005056AB0C4F&compId=irfh5010pbf.pdf?ci_sign=dc0d60716a5924fc56a535cd67f663c50e1ec509
IRFH5010TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5015TRPBF pVersion=0046&contRep=ZT&docId=E221B51A9A0F40F1A303005056AB0C4F&compId=irfh5015pbf.pdf?ci_sign=eb6ae4a5494ec8a6c1560e3bc7b19829447ecba1
IRFH5015TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1.pdf
AIKW50N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N65DF5XKSA1 AIKW50N65DF5.pdf
AIKW50N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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BTS4141N description BTS4141N.pdf
BTS4141N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
Kind of output: N-Channel
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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IRG4BC40W-STRRP IRG4BC40W-STRRP.pdf
IRG4BC40W-STRRP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
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IRL530NSTRLPBF pVersion=0046&contRep=ZT&docId=E22275DBBD2C88F1A303005056AB0C4F&compId=irl530nspbf.pdf?ci_sign=4b011cbadfca1f27978a0c2fa18b673b18bbb418
IRL530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Technology: HEXFET®
Gate-source voltage: ±20V
Features of semiconductor devices: logic level
Kind of channel: enhancement
auf Bestellung 4005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
59+1.22 EUR
73+0.99 EUR
100+0.89 EUR
250+0.77 EUR
500+0.68 EUR
800+0.61 EUR
1600+0.53 EUR
Mindestbestellmenge: 41
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IRFR1205TRPBF pVersion=0046&contRep=ZT&docId=E221C020074448F1A303005056AB0C4F&compId=irfr1205pbf.pdf?ci_sign=ebd78e3c793ea692537d498167bbd2ef9f3ad95b
IRFR1205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Power dissipation: 107W
Drain-source voltage: 55V
Type of transistor: N-MOSFET
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
153+0.47 EUR
162+0.44 EUR
178+0.4 EUR
191+0.38 EUR
205+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL7437PBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFSL7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
46+1.56 EUR
Mindestbestellmenge: 29
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AIGW50N65F5XKSA1 AIGW50N65F5.pdf
AIGW50N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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SPP21N50C3 SPx21N50C3.pdf
SPP21N50C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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BTS428L2 BTS428L2.pdf
BTS428L2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Technology: Classic PROFET; SIPMOS™
Output voltage: 4.75...41V
Kind of output: N-Channel
auf Bestellung 2283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.49 EUR
20+3.68 EUR
100+2.97 EUR
250+2.7 EUR
500+2.5 EUR
1000+2.49 EUR
Mindestbestellmenge: 14
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BTS441TG BTS441TG.pdf
BTS441TG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Kind of output: N-Channel
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
18+4.05 EUR
100+3.59 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207ZGPBF irfb3207zgpbf.pdf
IRFB3207ZGPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207ZPBF description irfs3207zpbf.pdf
IRFB3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
37+1.96 EUR
43+1.69 EUR
50+1.47 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4019PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B705F1A6F5005056AB5A8F&compId=irfb4019pbf.pdf?ci_sign=35a3c85c464dacc468771d93b7f858d4900a1526
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
45+1.6 EUR
51+1.42 EUR
59+1.22 EUR
100+1.01 EUR
250+0.76 EUR
500+0.64 EUR
750+0.63 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6327XTSA1 BSS138WH6327XTSA1.pdf
BSS138WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
668+0.11 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6433XTMA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.12A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4020PBF irfb4020pbf.pdf
IRFB4020PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.1Ω
Gate charge: 18nC
Gate-source voltage: ±20V
Power dissipation: 100W
Technology: HEXFET®
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
66+1.09 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7530TRL7PP irfs7530-7ppbf.pdf
IRFS7530TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
26+2.85 EUR
28+2.56 EUR
100+2.16 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184PBF irs2184.pdf
IRS2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW75N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB1C37C3CAD820&compId=AIKW75N60CT.pdf?ci_sign=30f321bc96abbc3e7898d3a39c8acc9ee7412c40
AIKW75N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Gate charge: 470nC
Turn-on time: 69ns
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Collector current: 75A
Power dissipation: 428W
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Case: TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Technology: TRENCHSTOP™
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA418D2E1B5EA&compId=IRFB4510PBF.pdf?ci_sign=9339082daf1e6b0bfcc37dddedca7d1124a64194
IRFB4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
62+1.16 EUR
69+1.04 EUR
75+0.96 EUR
100+0.89 EUR
200+0.82 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRFU5305PBF description pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
95+0.76 EUR
106+0.68 EUR
124+0.58 EUR
150+0.57 EUR
Mindestbestellmenge: 84
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SMBT3904SH6327XTSA1 SMBT3904SH6327.pdf
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
AIKW20N60CTXKSA1 AIKW20N60CT.pdf
AIKW20N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8103VTRPBF irlr8103vpbf.pdf
IRLR8103VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4615PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A76F1A6F5005056AB5A8F&compId=irfb4615pbf.pdf?ci_sign=b017e04afb02e0c37365c5a851437e30722be4bc
IRFB4615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRFML8244TRPBF irfml8244pbf.pdf
IRFML8244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 4913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
345+0.21 EUR
544+0.13 EUR
705+0.1 EUR
1000+0.093 EUR
3000+0.09 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BCR185WH6327 BCR185.pdf
BCR185WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
769+0.093 EUR
Mindestbestellmenge: 769
Im Einkaufswagen  Stück im Wert von  UAH
IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
40+1.82 EUR
50+1.6 EUR
100+1.53 EUR
250+1.44 EUR
1000+1.43 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
AIGW50N65H5XKSA1 AIGW50N65H5.pdf
AIGW50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKP20N60CTAKSA1 AIKP20N60CT.pdf
AIKP20N60CTAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
17+4.43 EUR
18+3.98 EUR
50+3.7 EUR
250+3.69 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
AIKB20N60CTATMA1 AIKB20N60CT.pdf
AIKB20N60CTATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ120N60TXKSA1 IKQ120N60T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR15N20DTRPBF IRFR15N20DTRPBF.pdf
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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