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IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB13F1A6F5005056AB5A8F&compId=irfp4110pbf.pdf?ci_sign=6f5917c718a71c13d636e4dbfc23bbd396deb66b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Power dissipation: 370W
Gate charge: 150nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BFR93AE6327 BFR93AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C30483FF811C&compId=BFR93AE6327-dte.pdf?ci_sign=4976f0bcbdde1e8f6f5441178f01c8ea32474540 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 13314 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
193+0.37 EUR
290+0.25 EUR
926+0.077 EUR
981+0.073 EUR
Mindestbestellmenge: 157
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BFR93AWH6327 BFR93AWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C52D96F5811C&compId=BFR93AWH6327-dte.pdf?ci_sign=f5dad9dcde5007a2b1c25553281c2232de027f10 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
650+0.11 EUR
782+0.092 EUR
944+0.076 EUR
1000+0.072 EUR
12000+0.069 EUR
Mindestbestellmenge: 455
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFA6F1A1E1D5EA&compId=IRFZ44ZSTRRPBF.pdf?ci_sign=6370c9272db105c61280a6fd399b967cc13fdd2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024NTRPBF IRLR024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Case: DPAK
Drain-source voltage: 55V
Drain current: 17A
auf Bestellung 1211 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
98+0.74 EUR
123+0.58 EUR
213+0.34 EUR
226+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 70
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IRLML2030TRPBF IRLML2030TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825E7F1A6F5005056AB5A8F&compId=irlml2030pbf.pdf?ci_sign=a1998ead6eaa1089a0ac43972a6165773eca35a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2163 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
266+0.27 EUR
348+0.21 EUR
394+0.18 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 157
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IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825EEF1A6F5005056AB5A8F&compId=irlml2060pbf.pdf?ci_sign=8f6b20a635982558b5faa81751781baa759c75d9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3171 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
241+0.3 EUR
321+0.22 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 162
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IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BA0DC5F07F1A303005056AB0C4F&compId=irlml2246pbf.pdf?ci_sign=9676557545f801f7a2f3db0a86594d388331cd8f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Drain-source voltage: -20V
Drain current: -2.6A
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
300+0.24 EUR
414+0.17 EUR
486+0.15 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 228
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IRLML2502TRPBF IRLML2502TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1169C8AFE75EA&compId=IRLML2502TRPBF.pdf?ci_sign=ee943fbc222d20849d4363e63ac713ce2afa2b4a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1427 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
228+0.31 EUR
305+0.23 EUR
343+0.21 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 129
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IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582603F1A6F5005056AB5A8F&compId=irlml2803.pdf?ci_sign=068837b0a7fb98cbe47bd8f4ee1d75009a4dd519 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2127 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
207+0.35 EUR
244+0.29 EUR
355+0.2 EUR
417+0.17 EUR
596+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 157
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IRF2807PBF IRF2807PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABB6F1A6F5005056AB5A8F&compId=irf2807.pdf?ci_sign=c4365dc6896733f25b90727d104b25bdc69a3b88 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 106.7nC
Kind of package: tube
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
36+2 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 29
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IRF2807STRLPBF IRF2807STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF2807STRRPBF IRF2807STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF2807ZPBF IRF2807ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABC4F1A6F5005056AB5A8F&compId=irf2807z.pdf?ci_sign=f84c3cab78883006c4b1662defbed8d4661697b0 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 71nC
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
37+1.98 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 27
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IR21844PBF IR21844PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.7 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 16
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IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
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IR2184PBF IR2184PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 20
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IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.96 EUR
20+3.58 EUR
27+2.73 EUR
28+2.59 EUR
Mindestbestellmenge: 19
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IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
19+3.93 EUR
35+2.1 EUR
36+1.99 EUR
Mindestbestellmenge: 18
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BAT60AE6327HTSA1 BAT60AE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EFEC4D26E1A4FA8&compId=BAT60AE6327-DTE.pdf?ci_sign=5452283d909e53b8bdbfacd006cc97d8049e2534 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 2625 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
382+0.19 EUR
432+0.17 EUR
486+0.15 EUR
685+0.1 EUR
725+0.099 EUR
1000+0.096 EUR
Mindestbestellmenge: 250
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BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E00C6D1B8DA469&compId=BAT60BE6327HTSA1.pdf?ci_sign=441728a00897fed1bb4048a2445b2375ec671b6c Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
248+0.29 EUR
311+0.23 EUR
348+0.21 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 167
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BTS452R BTS452R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE604B660BACFA8&compId=BTS452R-DTE.pdf?ci_sign=b267e80bbe61e6651960ff2d69f4b2da6e19fb4a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
40+1.8 EUR
43+1.7 EUR
Mindestbestellmenge: 18
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BAV70SH6327XTSA1 BAV70SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
511+0.14 EUR
828+0.086 EUR
890+0.08 EUR
930+0.077 EUR
942+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 511
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BAV99SH6327XTSA1 BAV99SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB816C40A9AA469&compId=BAV99SH6327XTSA1.pdf?ci_sign=7841fb4160d2a365fb52354be87bec42fd0eebfe Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
161+0.45 EUR
229+0.31 EUR
288+0.25 EUR
387+0.18 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 161
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IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991B35094D5D3F8BF&compId=IRS2092.pdf?ci_sign=d30561b8f2167b835e01440d97d321cfe7659908 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1517 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
28+2.56 EUR
30+2.42 EUR
100+2.39 EUR
250+2.33 EUR
Mindestbestellmenge: 19
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IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A28B5E97DEF1A303005056AB0C4F&compId=irf7413zpbf.pdf?ci_sign=0a0941c7081f3ad0564ea06b4ffff92ce75b9dcf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 2.5W
Technology: HEXFET®
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
102+0.7 EUR
135+0.53 EUR
219+0.33 EUR
232+0.31 EUR
Mindestbestellmenge: 72
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IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCEF05BD07A745&compId=IRS20752ltrpbf.pdf?ci_sign=ef2d046c3868bd8f5a439bd44dd071464cf6744b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Kind of package: reel; tape
Topology: single transistor
Voltage class: 200V
Operating temperature: -40...125°C
Turn-on time: 225ns
Turn-off time: 255ns
Output current: -240...160mA
Kind of integrated circuit: gate driver; high-side
auf Bestellung 2673 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
88+0.82 EUR
95+0.76 EUR
114+0.63 EUR
120+0.6 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
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IRFP064NPBF IRFP064NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA9CF1A6F5005056AB5A8F&compId=irfp064n.pdf?ci_sign=24f2d5c6c21e5e1e08dcd4962b305485e88e41fa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
31+2.33 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 25
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IRFP3206PBF IRFP3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAE2F1A6F5005056AB5A8F&compId=irfp3206pbf.pdf?ci_sign=2ef9fa9035d9ed3b666b2138b0e0fedc28184ff0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 21
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IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BBBCDDD51F1A303005056AB0C4F&compId=irlml5103pbf.pdf?ci_sign=d05fc47b1999adccea3e17a03d7050a4a06178d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 923 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
233+0.31 EUR
323+0.22 EUR
374+0.19 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 152
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IRF3415PBF IRF3415PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AC26F1A6F5005056AB5A8F&compId=irf3415.pdf?ci_sign=6557a603b03ca9e53218ae6af91344f121c3305f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 133.3nC
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
36+1.99 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 28
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IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6077C01015F1A303005056AB0C4F&compId=irf3415spbf.pdf?ci_sign=31c310c17ce697aea79e1cb7cb67885503cefcfc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAAAF1A6F5005056AB5A8F&compId=irfp150n.pdf?ci_sign=3d5f4181bac72740c14a3465f646a761c7e9dbee description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
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IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA95F1A6F5005056AB5A8F&compId=irfp054n.pdf?ci_sign=bcd46d929bd827ee9a9c3a41dc89ce2d51391be2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
39+1.84 EUR
41+1.74 EUR
400+1.67 EUR
Mindestbestellmenge: 19
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BCP5216H6327XTSA1 BCP5216H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5BB543851E469&compId=BCP5216H6327XTSA1.pdf?ci_sign=32661be25e0eb08e39efe4bf55c87c5ce197e855 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Case: SOT223
Collector current: 1A
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Frequency: 125MHz
Collector-emitter voltage: 60V
Produkt ist nicht verfügbar
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ICE3A2065ELJFKLA1 ICE3A2065ELJFKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC193F4FA82D3D7&compId=ICE3A2065ELJ.pdf?ci_sign=3990ab0fbb34ff3915c4f3824fd7bec35a4aa8f9 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.7 EUR
21+3.52 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 16
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ICE3AR0680JZXKLA1
+1
 		ICE3AR0680JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC197E0F7F093D7&compId=ICE3AR0680JZ.pdf?ci_sign=e5a5a2a41e0d97336de868e16e9987b775cba6af Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 20A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
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SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPB11N60C3ATMA1 INFINEON TECHNOLOGIES SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58BF0F14026474A&compId=SPW35N60C3.pdf?ci_sign=d5cc3f9b644bd5805b4f67199468e72689a460cc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.97 EUR
7+10.7 EUR
Mindestbestellmenge: 6
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IRFP3306PBF IRFP3306PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAE9F1A6F5005056AB5A8F&compId=irfp3306pbf.pdf?ci_sign=1f8fb5e0a84f430f9c9d6471d61ba587046f7b3c description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C07DF1A6F5005056AB5A8F&compId=irfp4468pbf.pdf?ci_sign=eef523c294153480bee6f3f39501fda4f4a75d12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.89 EUR
22+3.4 EUR
23+3.22 EUR
100+3.09 EUR
Mindestbestellmenge: 13
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IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B736F1A6F5005056AB5A8F&compId=irfb4227pbf.pdf?ci_sign=73cadd42ded945992e2faf41c326daefc593b46d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Power dissipation: 190W
Gate charge: 70nC
Technology: HEXFET®
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
53+1.37 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 32
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IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF118D59B2D95EA&compId=IRLML6402TRPBF.pdf?ci_sign=cbdcaee48cfc20dd66c36e8dc65e96f5bc0941ff Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 26810 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
232+0.31 EUR
323+0.22 EUR
371+0.19 EUR
782+0.092 EUR
834+0.086 EUR
Mindestbestellmenge: 139
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BSC100N03MSGATMA1 BSC100N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38C25CDBE7C611C&compId=BSC100N03MSG-DTE.pdf?ci_sign=d3a515f2e8fe5598d360f552b9155b246cfe36f8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A580DBC045911820&compId=BSC100N06LS3G.pdf?ci_sign=5cfb9f41c9a01975b454eaf48ab23f5e8f178473 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 45nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PG-TDSON-8
auf Bestellung 4082 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
85+0.84 EUR
167+0.43 EUR
176+0.41 EUR
2000+0.4 EUR
2500+0.39 EUR
Mindestbestellmenge: 52
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IRFP90N20DPBF IRFP90N20DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A7F1A6F5005056AB5A8F&compId=irfp90n20d.pdf?ci_sign=35d758d28b064f4d87903f236acbfb7653d7433c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.64 EUR
22+3.33 EUR
23+3.15 EUR
Mindestbestellmenge: 10
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IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.61 EUR
18+4.13 EUR
19+3.9 EUR
Mindestbestellmenge: 11
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IRF7416TRPBF IRF7416TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2B1BB2E2AF1A303005056AB0C4F&compId=irf7416qpbf.pdf?ci_sign=48a07bb72ed8a46a228df4b109fde42c036d74c8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF5210PBF IRF5210PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B27F1A6F5005056AB5A8F&compId=irf5210.pdf?ci_sign=e24ff7119c232139f774b544bfcb23e827bf91eb Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
Gate-source voltage: ±20V
On-state resistance: 60mΩ
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.87 EUR
32+2.25 EUR
61+1.19 EUR
64+1.13 EUR
Mindestbestellmenge: 25
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IRF5210STRLPBF IRF5210STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
22+3.29 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 17
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IRF5210STRRPBF IRF5210STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS140WE6327HTSA1 BAS140WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF27ED36718469&compId=BAS140WE6327HTSA1.pdf?ci_sign=b32bb421919227b430b9bf5b53efb00a9a0502fa Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
auf Bestellung 6255 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
277+0.26 EUR
508+0.14 EUR
1137+0.063 EUR
1202+0.059 EUR
Mindestbestellmenge: 162
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.17 EUR
32+2.23 EUR
Mindestbestellmenge: 23
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IRF7389TRPBF IRF7389TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A176919833F1A303005056AB0C4F&compId=irf7389pbf.pdf?ci_sign=33486cc5a79142c2d9ae938ef43a9f134b5aef0b description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B48F1A6F5005056AB5A8F&compId=irfi3205.pdf?ci_sign=52d8c371c50b82fd99e00416e1acfb35fbd9f833 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.2 EUR
31+2.36 EUR
33+2.23 EUR
100+2.19 EUR
Mindestbestellmenge: 23
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Case: DIP8
Mounting: THT
Topology: IGBT half-bridge; MOSFET half-bridge
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 6...20V DC
Turn-on time: 85ns
Turn-off time: 65ns
Power: 1W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
37+1.96 EUR
38+1.89 EUR
Mindestbestellmenge: 22
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IR4427STRPBF IR4427STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Topology: IGBT half-bridge; MOSFET half-bridge
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 6...20V DC
Turn-on time: 85ns
Turn-off time: 65ns
Power: 625mW
auf Bestellung 2574 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
38+1.93 EUR
49+1.47 EUR
52+1.4 EUR
2500+1.37 EUR
Mindestbestellmenge: 34
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IRFP4110PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB13F1A6F5005056AB5A8F&compId=irfp4110pbf.pdf?ci_sign=6f5917c718a71c13d636e4dbfc23bbd396deb66b
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Power dissipation: 370W
Gate charge: 150nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BFR93AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C30483FF811C&compId=BFR93AE6327-dte.pdf?ci_sign=4976f0bcbdde1e8f6f5441178f01c8ea32474540
BFR93AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 13314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
193+0.37 EUR
290+0.25 EUR
926+0.077 EUR
981+0.073 EUR
Mindestbestellmenge: 157
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BFR93AWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C52D96F5811C&compId=BFR93AWH6327-dte.pdf?ci_sign=f5dad9dcde5007a2b1c25553281c2232de027f10
BFR93AWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
650+0.11 EUR
782+0.092 EUR
944+0.076 EUR
1000+0.072 EUR
12000+0.069 EUR
Mindestbestellmenge: 455
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IRFZ44ZSTRRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFA6F1A1E1D5EA&compId=IRFZ44ZSTRRPBF.pdf?ci_sign=6370c9272db105c61280a6fd399b967cc13fdd2d
IRFZ44ZSTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024NTRPBF description pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f
IRLR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Case: DPAK
Drain-source voltage: 55V
Drain current: 17A
auf Bestellung 1211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
98+0.74 EUR
123+0.58 EUR
213+0.34 EUR
226+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 70
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IRLML2030TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825E7F1A6F5005056AB5A8F&compId=irlml2030pbf.pdf?ci_sign=a1998ead6eaa1089a0ac43972a6165773eca35a9
IRLML2030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
266+0.27 EUR
348+0.21 EUR
394+0.18 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 157
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IRLML2060TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825EEF1A6F5005056AB5A8F&compId=irlml2060pbf.pdf?ci_sign=8f6b20a635982558b5faa81751781baa759c75d9
IRLML2060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
241+0.3 EUR
321+0.22 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 162
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IRLML2246TRPBF pVersion=0046&contRep=ZT&docId=E2227BA0DC5F07F1A303005056AB0C4F&compId=irlml2246pbf.pdf?ci_sign=9676557545f801f7a2f3db0a86594d388331cd8f
IRLML2246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Drain-source voltage: -20V
Drain current: -2.6A
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
300+0.24 EUR
414+0.17 EUR
486+0.15 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 228
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IRLML2502TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1169C8AFE75EA&compId=IRLML2502TRPBF.pdf?ci_sign=ee943fbc222d20849d4363e63ac713ce2afa2b4a
IRLML2502TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
228+0.31 EUR
305+0.23 EUR
343+0.21 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 129
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IRLML2803TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F582603F1A6F5005056AB5A8F&compId=irlml2803.pdf?ci_sign=068837b0a7fb98cbe47bd8f4ee1d75009a4dd519
IRLML2803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
207+0.35 EUR
244+0.29 EUR
355+0.2 EUR
417+0.17 EUR
596+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABB6F1A6F5005056AB5A8F&compId=irf2807.pdf?ci_sign=c4365dc6896733f25b90727d104b25bdc69a3b88
IRF2807PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 106.7nC
Kind of package: tube
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
36+2 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807STRLPBF pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8
IRF2807STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807STRRPBF pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8
IRF2807STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABC4F1A6F5005056AB5A8F&compId=irf2807z.pdf?ci_sign=f84c3cab78883006c4b1662defbed8d4661697b0
IRF2807ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 71nC
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
37+1.98 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR21844PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IR21844SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.7 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR21844STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2184PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2184SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.96 EUR
20+3.58 EUR
27+2.73 EUR
28+2.59 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IR2184STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
19+3.93 EUR
35+2.1 EUR
36+1.99 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BAT60AE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EFEC4D26E1A4FA8&compId=BAT60AE6327-DTE.pdf?ci_sign=5452283d909e53b8bdbfacd006cc97d8049e2534
BAT60AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 2625 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
382+0.19 EUR
432+0.17 EUR
486+0.15 EUR
685+0.1 EUR
725+0.099 EUR
1000+0.096 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BAT60BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E00C6D1B8DA469&compId=BAT60BE6327HTSA1.pdf?ci_sign=441728a00897fed1bb4048a2445b2375ec671b6c
BAT60BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
248+0.29 EUR
311+0.23 EUR
348+0.21 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
BTS452R pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE604B660BACFA8&compId=BTS452R-DTE.pdf?ci_sign=b267e80bbe61e6651960ff2d69f4b2da6e19fb4a
BTS452R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
40+1.8 EUR
43+1.7 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BAV70SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450
BAV70SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
511+0.14 EUR
828+0.086 EUR
890+0.08 EUR
930+0.077 EUR
942+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 511
Im Einkaufswagen  Stück im Wert von  UAH
BAV99SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB816C40A9AA469&compId=BAV99SH6327XTSA1.pdf?ci_sign=7841fb4160d2a365fb52354be87bec42fd0eebfe
BAV99SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
161+0.45 EUR
229+0.31 EUR
288+0.25 EUR
387+0.18 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 161
Im Einkaufswagen  Stück im Wert von  UAH
IRS2092STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991B35094D5D3F8BF&compId=IRS2092.pdf?ci_sign=d30561b8f2167b835e01440d97d321cfe7659908
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1517 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
28+2.56 EUR
30+2.42 EUR
100+2.39 EUR
250+2.33 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBF description pVersion=0046&contRep=ZT&docId=E221A28B5E97DEF1A303005056AB0C4F&compId=irf7413zpbf.pdf?ci_sign=0a0941c7081f3ad0564ea06b4ffff92ce75b9dcf
IRF7413ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 2.5W
Technology: HEXFET®
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
102+0.7 EUR
135+0.53 EUR
219+0.33 EUR
232+0.31 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
IRS20752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCEF05BD07A745&compId=IRS20752ltrpbf.pdf?ci_sign=ef2d046c3868bd8f5a439bd44dd071464cf6744b
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Kind of package: reel; tape
Topology: single transistor
Voltage class: 200V
Operating temperature: -40...125°C
Turn-on time: 225ns
Turn-off time: 255ns
Output current: -240...160mA
Kind of integrated circuit: gate driver; high-side
auf Bestellung 2673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
88+0.82 EUR
95+0.76 EUR
114+0.63 EUR
120+0.6 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
IRFP064NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA9CF1A6F5005056AB5A8F&compId=irfp064n.pdf?ci_sign=24f2d5c6c21e5e1e08dcd4962b305485e88e41fa
IRFP064NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
31+2.33 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3206PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAE2F1A6F5005056AB5A8F&compId=irfp3206pbf.pdf?ci_sign=2ef9fa9035d9ed3b666b2138b0e0fedc28184ff0
IRFP3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRLML5103TRPBF pVersion=0046&contRep=ZT&docId=E2227BBBCDDD51F1A303005056AB0C4F&compId=irlml5103pbf.pdf?ci_sign=d05fc47b1999adccea3e17a03d7050a4a06178d1
IRLML5103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 923 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
233+0.31 EUR
323+0.22 EUR
374+0.19 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AC26F1A6F5005056AB5A8F&compId=irf3415.pdf?ci_sign=6557a603b03ca9e53218ae6af91344f121c3305f
IRF3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 133.3nC
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
36+1.99 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415STRLPBF pVersion=0046&contRep=ZT&docId=E21F6077C01015F1A303005056AB0C4F&compId=irf3415spbf.pdf?ci_sign=31c310c17ce697aea79e1cb7cb67885503cefcfc
IRF3415STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP150NPBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACAAAF1A6F5005056AB5A8F&compId=irfp150n.pdf?ci_sign=3d5f4181bac72740c14a3465f646a761c7e9dbee
IRFP150NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRFP054NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA95F1A6F5005056AB5A8F&compId=irfp054n.pdf?ci_sign=bcd46d929bd827ee9a9c3a41dc89ce2d51391be2
IRFP054NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
39+1.84 EUR
41+1.74 EUR
400+1.67 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BCP5216H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5BB543851E469&compId=BCP5216H6327XTSA1.pdf?ci_sign=32661be25e0eb08e39efe4bf55c87c5ce197e855
BCP5216H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Case: SOT223
Collector current: 1A
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Frequency: 125MHz
Collector-emitter voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3A2065ELJFKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC193F4FA82D3D7&compId=ICE3A2065ELJ.pdf?ci_sign=3990ab0fbb34ff3915c4f3824fd7bec35a4aa8f9
ICE3A2065ELJFKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.7 EUR
21+3.52 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
ICE3AR0680JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC197E0F7F093D7&compId=ICE3AR0680JZ.pdf?ci_sign=e5a5a2a41e0d97336de868e16e9987b775cba6af
ICE3AR0680JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 20A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SPW35N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58BF0F14026474A&compId=SPW35N60C3.pdf?ci_sign=d5cc3f9b644bd5805b4f67199468e72689a460cc
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.97 EUR
7+10.7 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3306PBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACAE9F1A6F5005056AB5A8F&compId=irfp3306pbf.pdf?ci_sign=1f8fb5e0a84f430f9c9d6471d61ba587046f7b3c
IRFP3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4468PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C07DF1A6F5005056AB5A8F&compId=irfp4468pbf.pdf?ci_sign=eef523c294153480bee6f3f39501fda4f4a75d12
IRFP4468PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.89 EUR
22+3.4 EUR
23+3.22 EUR
100+3.09 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B736F1A6F5005056AB5A8F&compId=irfb4227pbf.pdf?ci_sign=73cadd42ded945992e2faf41c326daefc593b46d
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Power dissipation: 190W
Gate charge: 70nC
Technology: HEXFET®
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
53+1.37 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6402TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF118D59B2D95EA&compId=IRLML6402TRPBF.pdf?ci_sign=cbdcaee48cfc20dd66c36e8dc65e96f5bc0941ff
IRLML6402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 26810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
232+0.31 EUR
323+0.22 EUR
371+0.19 EUR
782+0.092 EUR
834+0.086 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BSC100N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38C25CDBE7C611C&compId=BSC100N03MSG-DTE.pdf?ci_sign=d3a515f2e8fe5598d360f552b9155b246cfe36f8
BSC100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A580DBC045911820&compId=BSC100N06LS3G.pdf?ci_sign=5cfb9f41c9a01975b454eaf48ab23f5e8f178473
BSC100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 45nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PG-TDSON-8
auf Bestellung 4082 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
85+0.84 EUR
167+0.43 EUR
176+0.41 EUR
2000+0.4 EUR
2500+0.39 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRFP90N20DPBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A7F1A6F5005056AB5A8F&compId=irfp90n20d.pdf?ci_sign=35d758d28b064f4d87903f236acbfb7653d7433c
IRFP90N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.64 EUR
22+3.33 EUR
23+3.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPP075N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4
IPP075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.61 EUR
18+4.13 EUR
19+3.9 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRF7416TRPBF pVersion=0046&contRep=ZT&docId=E221A2B1BB2E2AF1A303005056AB0C4F&compId=irf7416qpbf.pdf?ci_sign=48a07bb72ed8a46a228df4b109fde42c036d74c8
IRF7416TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B27F1A6F5005056AB5A8F&compId=irf5210.pdf?ci_sign=e24ff7119c232139f774b544bfcb23e827bf91eb
IRF5210PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
Gate-source voltage: ±20V
On-state resistance: 60mΩ
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
32+2.25 EUR
61+1.19 EUR
64+1.13 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRLPBF pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0
IRF5210STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
22+3.29 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRRPBF pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0
IRF5210STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS140WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF27ED36718469&compId=BAS140WE6327HTSA1.pdf?ci_sign=b32bb421919227b430b9bf5b53efb00a9a0502fa
BAS140WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
auf Bestellung 6255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
277+0.26 EUR
508+0.14 EUR
1137+0.063 EUR
1202+0.059 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665XKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
32+2.23 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF description pVersion=0046&contRep=ZT&docId=E221A176919833F1A303005056AB0C4F&compId=irf7389pbf.pdf?ci_sign=33486cc5a79142c2d9ae938ef43a9f134b5aef0b
IRF7389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI3205PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284B48F1A6F5005056AB5A8F&compId=irfi3205.pdf?ci_sign=52d8c371c50b82fd99e00416e1acfb35fbd9f833
IRFI3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
31+2.36 EUR
33+2.23 EUR
100+2.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Case: DIP8
Mounting: THT
Topology: IGBT half-bridge; MOSFET half-bridge
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 6...20V DC
Turn-on time: 85ns
Turn-off time: 65ns
Power: 1W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
37+1.96 EUR
38+1.89 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Topology: IGBT half-bridge; MOSFET half-bridge
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 6...20V DC
Turn-on time: 85ns
Turn-off time: 65ns
Power: 625mW
auf Bestellung 2574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
38+1.93 EUR
49+1.47 EUR
52+1.4 EUR
2500+1.37 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
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