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BTS5120-2EKA BTS5120-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987523C94E0469&compId=BTS5120-2EKA.pdf?ci_sign=2145b2d43fa43b21b36e2e06df885e96ad29b848 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Technology: PROFET™+ 12V
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2A
On-state resistance: 0.22Ω
Number of channels: 2
Supply voltage: 8...18V DC
Kind of integrated circuit: high-side
Case: SO14
auf Bestellung 1846 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.46 EUR
32+2.26 EUR
52+1.39 EUR
55+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 21
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IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.39 EUR
13+5.75 EUR
25+4.78 EUR
50+4.38 EUR
Mindestbestellmenge: 10
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDFE7C04F673D1&compId=IPN80R1K2P7.pdf?ci_sign=016ba9a1e5be19df356a574b4dc7ffc00988a06e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DD100N16S DD100N16S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C84516482EE469&compId=DD100N16S.pdf?ci_sign=cddd1f5c7b5b531472b3ec26888b82e1ca2304e1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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BC857BE6327 BC857BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRF7351TRPBF IRF7351TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3492 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
56+1.28 EUR
61+1.18 EUR
87+0.83 EUR
92+0.79 EUR
1000+0.76 EUR
Mindestbestellmenge: 45
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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78 Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Type of development kit: ARM Infineon
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kit contents: development board with XMCmicrocontroller; expansion board
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Components: XMC4800-F144
Family: XMC4800
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
610+0.12 EUR
695+0.1 EUR
770+0.093 EUR
1000+0.087 EUR
Mindestbestellmenge: 610
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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ISP752T ISP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 1662 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.02 EUR
43+1.69 EUR
45+1.6 EUR
100+1.54 EUR
Mindestbestellmenge: 24
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TD122N22KOF TD122N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
auf Bestellung 19415 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
715+0.1 EUR
930+0.077 EUR
1038+0.069 EUR
1188+0.06 EUR
1313+0.054 EUR
1437+0.05 EUR
3000+0.049 EUR
Mindestbestellmenge: 455
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.29 EUR
12+6.28 EUR
15+5.05 EUR
Mindestbestellmenge: 10
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3788 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
447+0.16 EUR
577+0.12 EUR
682+0.1 EUR
789+0.091 EUR
921+0.078 EUR
1009+0.071 EUR
1040+0.069 EUR
Mindestbestellmenge: 264
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT223
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: ±20V
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
243+0.29 EUR
257+0.28 EUR
268+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 193
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.07 EUR
8+9.19 EUR
10+8.21 EUR
Mindestbestellmenge: 7
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Active logical level: low
Supply voltage: 4.5...5.5V
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+6.69 EUR
Mindestbestellmenge: 800
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IPD040N03LF2SATMA1 INFINEON TECHNOLOGIES IPD040N03LF2SATMA1.pdf Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.42 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 40A; 37W; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.28 EUR
Mindestbestellmenge: 5000
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ESD131B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26W; 6V; 3.5A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Type of diode: TVS
Leakage current: 0.1µA
Number of channels: 1
Max. forward impulse current: 3.5A
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Peak pulse power dissipation: 26W
Case: 0201; 0603
Semiconductor structure: bidirectional
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.046 EUR
Mindestbestellmenge: 15000
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CY8C5287AXI-LP095 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; Core: 32-bit
Type of integrated circuit: ARM microcontroller
Clock frequency: 67MHz
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
90+13.73 EUR
Mindestbestellmenge: 90
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; 4kV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Insulation voltage: 4kV
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.85 EUR
Mindestbestellmenge: 50
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; 4kV; -40÷85°C
Type of relay: solid state
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.85 EUR
Mindestbestellmenge: 50
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PVT412PBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.92 EUR
150+4.43 EUR
Mindestbestellmenge: 50
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BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 66000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.045 EUR
Mindestbestellmenge: 3000
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IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 30A; 100W; DPAK; automotive industry
Application: automotive industry
Technology: MOSFET
On-state resistance: 15.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Case: DPAK
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
auf Bestellung 910000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.65 EUR
Mindestbestellmenge: 2500
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IPD30N06S4L23ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 30A; 36W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.47 EUR
Mindestbestellmenge: 2500
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES infineon-irl40sc228-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.63 EUR
20+3.73 EUR
22+3.32 EUR
26+2.85 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.26A
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.19 EUR
Mindestbestellmenge: 2500
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BAS2103WE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BAS21SERIES-DS-v01_01-en.pdf?fileId=5546d4624933b8750149880ded0b7e1a Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 50ns; SOD323; Ufmax: 1.25V; 100nA
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 1.25V
Max. off-state voltage: 200V
Application: automotive industry
Mounting: SMD
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.058 EUR
Mindestbestellmenge: 10000
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IRLR3636TRLPBF INFINEON TECHNOLOGIES IRSDS10828-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.41 EUR
Mindestbestellmenge: 2500
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IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.56 EUR
Mindestbestellmenge: 200
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IKCM15F60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
14+13.26 EUR
42+11.94 EUR
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BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 1nC
Application: automotive industry
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRS2004STRPBF INFINEON TECHNOLOGIES irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.92 EUR
Mindestbestellmenge: 2500
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BC817K40E6327HTSA1 INFINEON TECHNOLOGIES 4a-BC-817-40-E6433.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.048 EUR
Mindestbestellmenge: 3000
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BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 81000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.056 EUR
Mindestbestellmenge: 3000
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BCP5316H6327XTSA1 INFINEON TECHNOLOGIES bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: TO261-4
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.17 EUR
Mindestbestellmenge: 1000
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BC850CWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.049 EUR
Mindestbestellmenge: 3000
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IRFB4227PBFXKMA1 IRFB4227PBFXKMA1 INFINEON TECHNOLOGIES irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
33+2.2 EUR
40+1.79 EUR
51+1.42 EUR
100+1.13 EUR
Mindestbestellmenge: 28
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SPP15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.74 EUR
Mindestbestellmenge: 50
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IPD65R380E6ATMA1 IPD65R380E6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFP4468PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS436L2GATMA1 INFINEON TECHNOLOGIES Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V
Technology: SIPMOS™
Power dissipation: 75W
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.78 EUR
Mindestbestellmenge: 1000
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PVG612APBF INFINEON TECHNOLOGIES pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Control voltage: 1.2V DC
Max. operating current: 2A
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)
50+9.88 EUR
Mindestbestellmenge: 50
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IRFP4668PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfp4668-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA030N10NF2SXKSA1 IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Gate charge: 154nC
On-state resistance: 3mΩ
Gate-source voltage: 20V
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1004 Stücke:
Lieferzeit 14-21 Tag (e)
50+2.56 EUR
200+2.3 EUR
Mindestbestellmenge: 50
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FP40R12KE3 FP40R12KE3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698978B6E7E2469&compId=FP40R12KE3.pdf?ci_sign=49b6b959139c32616d6c0ffbe2a4d7fbce40eaeb description Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Power dissipation: 200W
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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FP40R12KE3BPSA1 INFINEON TECHNOLOGIES Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189 Category: IGBT modules
Description: Module: IGBT
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
15+103.35 EUR
Mindestbestellmenge: 15
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IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3872 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
100+0.72 EUR
148+0.48 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 63
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IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 23.1W
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.07 EUR
9+8.62 EUR
Mindestbestellmenge: 8
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IRF7311TRPBF IRF7311TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D564C0834F1A303005056AB0C4F&compId=irf7311pbf.pdf?ci_sign=8996b5e8514953b18fbf8dc54ac6b3c8a3a84fbb Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7341GTRPBF IRF7341GTRPBF INFINEON TECHNOLOGIES irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3053 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
45+1.62 EUR
53+1.37 EUR
59+1.22 EUR
100+1.1 EUR
250+0.99 EUR
500+0.94 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BTS5120-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987523C94E0469&compId=BTS5120-2EKA.pdf?ci_sign=2145b2d43fa43b21b36e2e06df885e96ad29b848
BTS5120-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Technology: PROFET™+ 12V
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2A
On-state resistance: 0.22Ω
Number of channels: 2
Supply voltage: 8...18V DC
Kind of integrated circuit: high-side
Case: SO14
auf Bestellung 1846 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
32+2.26 EUR
52+1.39 EUR
55+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.39 EUR
13+5.75 EUR
25+4.78 EUR
50+4.38 EUR
Mindestbestellmenge: 10
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IPN80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDFE7C04F673D1&compId=IPN80R1K2P7.pdf?ci_sign=016ba9a1e5be19df356a574b4dc7ffc00988a06e
IPN80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DD100N16S pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C84516482EE469&compId=DD100N16S.pdf?ci_sign=cddd1f5c7b5b531472b3ec26888b82e1ca2304e1
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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BC857BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a
BC857BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRF7351TRPBF pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897
IRF7351TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3492 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
56+1.28 EUR
61+1.18 EUR
87+0.83 EUR
92+0.79 EUR
1000+0.76 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586
BSC016N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4800 RELAX ETHERCAT KIT pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78
XMC4800 RELAX ETHERCAT KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Type of development kit: ARM Infineon
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kit contents: development board with XMCmicrocontroller; expansion board
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Components: XMC4800-F144
Family: XMC4800
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
610+0.12 EUR
695+0.1 EUR
770+0.093 EUR
1000+0.087 EUR
Mindestbestellmenge: 610
Im Einkaufswagen  Stück im Wert von  UAH
BCR129E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff
ISP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 1662 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
43+1.69 EUR
45+1.6 EUR
100+1.54 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
TD122N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443
TD122N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS316NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254
BSS316NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
auf Bestellung 19415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
930+0.077 EUR
1038+0.069 EUR
1188+0.06 EUR
1313+0.054 EUR
1437+0.05 EUR
3000+0.049 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6
IPA60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
12+6.28 EUR
15+5.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f
IPA60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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BSS131H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
447+0.16 EUR
577+0.12 EUR
682+0.1 EUR
789+0.091 EUR
921+0.078 EUR
1009+0.071 EUR
1040+0.069 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BSP296L6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1
BSP296L6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT223
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Drain current: 1.2A
Gate-source voltage: ±20V
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
243+0.29 EUR
257+0.28 EUR
268+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 193
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IGCM10F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.07 EUR
8+9.19 EUR
10+8.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Active logical level: low
Supply voltage: 4.5...5.5V
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+6.69 EUR
Mindestbestellmenge: 800
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.42 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 40A; 37W; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.28 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26W; 6V; 3.5A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Type of diode: TVS
Leakage current: 0.1µA
Number of channels: 1
Max. forward impulse current: 3.5A
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Peak pulse power dissipation: 26W
Case: 0201; 0603
Semiconductor structure: bidirectional
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.046 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5287AXI-LP095 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; Core: 32-bit
Type of integrated circuit: ARM microcontroller
Clock frequency: 67MHz
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+13.73 EUR
Mindestbestellmenge: 90
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; 4kV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Insulation voltage: 4kV
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.85 EUR
Mindestbestellmenge: 50
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; 4kV; -40÷85°C
Type of relay: solid state
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 25mA
Control voltage: 1.2V DC
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.85 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT412PBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.92 EUR
150+4.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 66000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.045 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 30A; 100W; DPAK; automotive industry
Application: automotive industry
Technology: MOSFET
On-state resistance: 15.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Case: DPAK
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
auf Bestellung 910000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 30A; 36W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.47 EUR
Mindestbestellmenge: 2500
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IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.63 EUR
20+3.73 EUR
22+3.32 EUR
26+2.85 EUR
50+2.59 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.26A
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.19 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BAS2103WE6433HTMA1 Infineon-BAS21SERIES-DS-v01_01-en.pdf?fileId=5546d4624933b8750149880ded0b7e1a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 50ns; SOD323; Ufmax: 1.25V; 100nA
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 1.25V
Max. off-state voltage: 200V
Application: automotive industry
Mounting: SMD
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.058 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.56 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+13.26 EUR
42+11.94 EUR
Mindestbestellmenge: 14
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BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 1nC
Application: automotive industry
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.057 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BC817K40E6327HTSA1 4a-BC-817-40-E6433.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.048 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 81000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BCP5316H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: TO261-4
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.049 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBFXKMA1 irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
33+2.2 EUR
40+1.79 EUR
51+1.42 EUR
100+1.13 EUR
Mindestbestellmenge: 28
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SPP15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.74 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R380E6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e
IPD65R380E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e
IPD65R380E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS436L2GATMA1 Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V
Technology: SIPMOS™
Power dissipation: 75W
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.78 EUR
Mindestbestellmenge: 1000
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PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Control voltage: 1.2V DC
Max. operating current: 2A
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+9.88 EUR
Mindestbestellmenge: 50
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IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
IPA030N10NF2SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Gate charge: 154nC
On-state resistance: 3mΩ
Gate-source voltage: 20V
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1004 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.56 EUR
200+2.3 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KE3 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698978B6E7E2469&compId=FP40R12KE3.pdf?ci_sign=49b6b959139c32616d6c0ffbe2a4d7fbce40eaeb
FP40R12KE3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Power dissipation: 200W
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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FP40R12KE3BPSA1 Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+103.35 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3872 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
100+0.72 EUR
148+0.48 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IKCM10H60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 23.1W
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.07 EUR
9+8.62 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF7311TRPBF pVersion=0046&contRep=ZT&docId=E2219D564C0834F1A303005056AB0C4F&compId=irf7311pbf.pdf?ci_sign=8996b5e8514953b18fbf8dc54ac6b3c8a3a84fbb
IRF7311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3053 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
45+1.62 EUR
53+1.37 EUR
59+1.22 EUR
100+1.1 EUR
250+0.99 EUR
500+0.94 EUR
Mindestbestellmenge: 32
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