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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 1379 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
49+1.49 EUR
52+1.39 EUR
55+1.32 EUR
100+1.24 EUR
250+1.19 EUR
Mindestbestellmenge: 35
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES TT210N12KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+157.01 EUR
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
auf Bestellung 1554 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
77+0.93 EUR
82+0.87 EUR
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES BCR400W.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
Output current: 10mA
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
385+0.19 EUR
443+0.16 EUR
477+0.15 EUR
532+0.13 EUR
Mindestbestellmenge: 313
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IRS21844STRPBF IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
42+1.73 EUR
44+1.63 EUR
Mindestbestellmenge: 32
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IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES IPP60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
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TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES TLD1120EL.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
88+0.82 EUR
97+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 73
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BTS723GW BTS723GW INFINEON TECHNOLOGIES BTS723GW.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.08 EUR
14+5.42 EUR
25+5.06 EUR
50+4.83 EUR
Mindestbestellmenge: 11
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BTS724G BTS724G INFINEON TECHNOLOGIES BTS724G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.88 EUR
Mindestbestellmenge: 10
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES ITS4141N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
54+1.34 EUR
59+1.22 EUR
Mindestbestellmenge: 40
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BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 2669 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
511+0.14 EUR
556+0.13 EUR
618+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT343
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
224+0.32 EUR
261+0.27 EUR
479+0.15 EUR
696+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 186
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES BSC109N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
432+0.17 EUR
625+0.11 EUR
834+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES BBY55_SER.pdf Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Features of semiconductor devices: RF
Capacitance: 5.5...19.6pF
Max. off-state voltage: 16V
Leakage current: 0.1µA
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
258+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 228
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BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Load current: 0.2A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
550+0.13 EUR
767+0.093 EUR
918+0.078 EUR
1169+0.061 EUR
1334+0.054 EUR
Mindestbestellmenge: 455
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 INFINEON TECHNOLOGIES BSC190N12NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 44A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ITS5215L ITS5215L INFINEON TECHNOLOGIES ITS5215L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 1335 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
28+2.57 EUR
33+2.17 EUR
35+2.06 EUR
Mindestbestellmenge: 26
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Voltage class: 600V
Supply voltage: 12...20V DC
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.63 EUR
35+2.07 EUR
Mindestbestellmenge: 28
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BSP78 BSP78 INFINEON TECHNOLOGIES BSP78.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1399 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
35+2.1 EUR
38+1.9 EUR
100+1.62 EUR
250+1.43 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 23
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DD100N16S DD100N16S INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Case: BG-SB20-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES IKD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 200mA; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 200mA
Power dissipation: 0.625W
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Topology: H-bridge
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.19 EUR
Mindestbestellmenge: 2500
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IRLR3636TRLPBF INFINEON TECHNOLOGIES IRSDS10828-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; PG-TO252-3-11
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: PG-TO252-3-11
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.38 EUR
Mindestbestellmenge: 2500
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IRFP4468PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PVG612APBF INFINEON TECHNOLOGIES pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2A
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Kind of output: MOSFET
Control voltage: 1.2V DC
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 3788 Stücke:
Lieferzeit 14-21 Tag (e)
50+9.9 EUR
Mindestbestellmenge: 50
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IRFP4668PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfp4668-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.45 EUR
16+4.68 EUR
20+3.58 EUR
25+2.92 EUR
Mindestbestellmenge: 14
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IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3808 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
100+0.72 EUR
148+0.48 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 63
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IRF7341GTRPBF IRF7341GTRPBF INFINEON TECHNOLOGIES irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2883 Stücke:
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45+1.62 EUR
53+1.37 EUR
59+1.22 EUR
100+1.1 EUR
250+0.99 EUR
500+0.94 EUR
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IRF7341TRPBFXTMA1 IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2240 Stücke:
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78+0.93 EUR
114+0.63 EUR
250+0.55 EUR
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IRFR6215TRLPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SPD08N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 7.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
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2500+0.8 EUR
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
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18+3.98 EUR
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IRFP3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
auf Bestellung 203 Stücke:
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22+3.33 EUR
24+2.99 EUR
28+2.65 EUR
30+2.46 EUR
100+2.3 EUR
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IRF7313TRPBFXTMA1 INFINEON TECHNOLOGIES irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2153DSTRPBF INFINEON TECHNOLOGIES irs2153d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Supply voltage: 10.1...16.8V DC
Number of channels: 2
Voltage class: 600V
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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IRFB4310ZPBFXKMA1 INFINEON TECHNOLOGIES infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES IRL1404STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 3.8W
Drain-source voltage: 40V
Drain current: 160A
Type of transistor: N-MOSFET
Features of semiconductor devices: logic level
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1246 Stücke:
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29+2.47 EUR
39+1.86 EUR
49+1.49 EUR
58+1.24 EUR
100+1.06 EUR
200+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 29
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IRFS3004TRL7PP INFINEON TECHNOLOGIES irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES SPD50P03LGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 7mΩ
Polarisation: unipolar
Power dissipation: 150W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1221 Stücke:
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27+2.66 EUR
34+2.12 EUR
100+1.52 EUR
500+1.2 EUR
1000+1.09 EUR
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IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES irfs7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
41+1.77 EUR
49+1.47 EUR
61+1.17 EUR
72+1 EUR
100+0.97 EUR
Mindestbestellmenge: 31
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IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES IRFB7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 173 Stücke:
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25+2.96 EUR
28+2.62 EUR
38+1.9 EUR
50+1.79 EUR
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.4 EUR
Mindestbestellmenge: 21
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES IPD025N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1555 Stücke:
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28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES BSC035N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 4160 Stücke:
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44+1.66 EUR
49+1.47 EUR
55+1.32 EUR
100+1.26 EUR
Mindestbestellmenge: 44
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 45mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
207+0.35 EUR
219+0.33 EUR
222+0.32 EUR
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES BSO211PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
173+0.41 EUR
187+0.38 EUR
204+0.35 EUR
Mindestbestellmenge: 157
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
41+1.77 EUR
50+1.56 EUR
100+1.47 EUR
250+1.32 EUR
500+1.23 EUR
Mindestbestellmenge: 35
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES AIKQ120N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-off time: 343ns
Technology: TRENCHSTOP™
Collector current: 120A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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BC817UE6327HTSA1 BC817UE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2582 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
182+0.39 EUR
202+0.35 EUR
262+0.27 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxy12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: single transistor
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Polarisation: unipolar
Power dissipation: 0.25W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
296+0.24 EUR
428+0.17 EUR
506+0.14 EUR
603+0.12 EUR
695+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 209
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IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 1379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
49+1.49 EUR
52+1.39 EUR
55+1.32 EUR
100+1.24 EUR
250+1.19 EUR
Mindestbestellmenge: 35
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FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TT210N12KOF TT210N12KOF.pdf
TT210N12KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+157.01 EUR
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
auf Bestellung 1554 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 56
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BCR400WH6327XTSA1 BCR400W.pdf
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
Output current: 10mA
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
443+0.16 EUR
477+0.15 EUR
532+0.13 EUR
Mindestbestellmenge: 313
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IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
42+1.73 EUR
44+1.63 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190P6XKSA1 IPP60R190P6-DTE.pdf
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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TLD1120ELXUMA1 TLD1120EL.pdf
TLD1120ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
88+0.82 EUR
97+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
BTS723GW BTS723GW.pdf
BTS723GW
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.08 EUR
14+5.42 EUR
25+5.06 EUR
50+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BTS724G BTS724G.pdf
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.88 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
ITS4141NHUMA1 ITS4141N.pdf
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
54+1.34 EUR
59+1.22 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704E6327HTSA1 BAT1704E6327HTSA1.pdf
BAT1704E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 2669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
511+0.14 EUR
556+0.13 EUR
618+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007WH6327XTSA1 BAS4004E6327HTSA1.pdf
BAS4007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT343
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
224+0.32 EUR
261+0.27 EUR
479+0.15 EUR
696+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BSC109N10NS3GATMA1 BSC109N10NS3G-DTE.pdf
BSC109N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7005WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
432+0.17 EUR
625+0.11 EUR
834+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BBY5502VH6327XTSA1 BBY55_SER.pdf
BBY5502VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Features of semiconductor devices: RF
Capacitance: 5.5...19.6pF
Max. off-state voltage: 16V
Leakage current: 0.1µA
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
258+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BAT5402VH6327XTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Load current: 0.2A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
550+0.13 EUR
767+0.093 EUR
918+0.078 EUR
1169+0.061 EUR
1334+0.054 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BSC190N12NS3GATMA1 BSC190N12NS3G-DTE.pdf
BSC190N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 44A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS5215L ITS5215L.pdf
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 1335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
28+2.57 EUR
33+2.17 EUR
35+2.06 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IR2128SPBF IR21271SPBF.pdf
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Voltage class: 600V
Supply voltage: 12...20V DC
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
35+2.07 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BSP78 BSP78.pdf
BSP78
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
35+2.1 EUR
38+1.9 EUR
100+1.62 EUR
250+1.43 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DD100N16S DD100N16S.pdf
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Case: BG-SB20-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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IKD04N60RFATMA1 IKD04N60RF.pdf
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 200mA; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 200mA
Power dissipation: 0.625W
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Topology: H-bridge
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.19 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; PG-TO252-3-11
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: PG-TO252-3-11
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2A
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Kind of output: MOSFET
Control voltage: 1.2V DC
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 3788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+9.9 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
16+4.68 EUR
20+3.58 EUR
25+2.92 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3808 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
100+0.72 EUR
148+0.48 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2883 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
45+1.62 EUR
53+1.37 EUR
59+1.22 EUR
100+1.1 EUR
250+0.99 EUR
500+0.94 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341TRPBFXTMA1 infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
IRF7341TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
78+0.93 EUR
114+0.63 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.45 EUR
2000+0.4 EUR
Mindestbestellmenge: 50
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IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 7.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
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IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.22 EUR
18+3.98 EUR
Mindestbestellmenge: 17
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IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
24+2.99 EUR
28+2.65 EUR
30+2.46 EUR
100+2.3 EUR
Mindestbestellmenge: 22
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IRF7313TRPBFXTMA1 irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSTRPBF irs2153d.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Supply voltage: 10.1...16.8V DC
Number of channels: 2
Voltage class: 600V
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBFXKMA1 infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL1404STRLPBF IRL1404STRLPBF.pdf
IRL1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 3.8W
Drain-source voltage: 40V
Drain current: 160A
Type of transistor: N-MOSFET
Features of semiconductor devices: logic level
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.47 EUR
39+1.86 EUR
49+1.49 EUR
58+1.24 EUR
100+1.06 EUR
200+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 29
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IRFS3004TRL7PP irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD50P03LGBTMA1 SPD50P03LGBTMA1-DTE.pdf
SPD50P03LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 7mΩ
Polarisation: unipolar
Power dissipation: 150W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
34+2.12 EUR
100+1.52 EUR
500+1.2 EUR
1000+1.09 EUR
Mindestbestellmenge: 27
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IRFB7537PBF irfs7537pbf.pdf
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
41+1.77 EUR
49+1.47 EUR
61+1.17 EUR
72+1 EUR
100+0.97 EUR
Mindestbestellmenge: 31
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IRFB7430PBF IRFB7430PBF.pdf
IRFB7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
28+2.62 EUR
38+1.9 EUR
50+1.79 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207PBF irfs3207pbf.pdf
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
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IPD025N06NATMA1 IPD025N06N-DTE.pdf
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BSC035N10NS5ATMA1 BSC035N10NS5-DTE.pdf
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 4160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
49+1.47 EUR
55+1.32 EUR
100+1.26 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 45mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
207+0.35 EUR
219+0.33 EUR
222+0.32 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BSO211PHXUMA1 BSO211PHXUMA1-dte.pdf
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
173+0.41 EUR
187+0.38 EUR
204+0.35 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IRF100B201 IRF100x201.pdf
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
41+1.77 EUR
50+1.56 EUR
100+1.47 EUR
250+1.32 EUR
500+1.23 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
AIKQ120N60CTXKSA1 AIKQ120N60CT.pdf
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-off time: 343ns
Technology: TRENCHSTOP™
Collector current: 120A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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BC817UE6327HTSA1 BC817UE6327.pdf
BC817UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2582 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
182+0.39 EUR
202+0.35 EUR
262+0.27 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
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1EDI60N12AFXUMA1 1EDIxxy12AF.pdf
1EDI60N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: single transistor
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Polarisation: unipolar
Power dissipation: 0.25W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
296+0.24 EUR
428+0.17 EUR
506+0.14 EUR
603+0.12 EUR
695+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
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