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BTS462T BTS462T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1545 Stücke:
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32+2.3 EUR
34+2.12 EUR
36+2.02 EUR
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 78 Stücke:
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56+1.29 EUR
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 250 Stücke:
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22+3.3 EUR
24+3.1 EUR
50+2.37 EUR
100+1.86 EUR
250+1.52 EUR
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Mounting: SMD
Case: SOT323
Semiconductor structure: double series
Type of diode: Schottky switching
Power dissipation: 0.1W
Load current: 0.11A
Max. off-state voltage: 4V
auf Bestellung 935 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
172+0.42 EUR
194+0.37 EUR
227+0.32 EUR
274+0.26 EUR
286+0.25 EUR
Mindestbestellmenge: 143
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1259 Stücke:
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12+6.16 EUR
16+4.72 EUR
25+4.35 EUR
50+4.22 EUR
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169 Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Gate charge: 191nC
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Drain current: 53A
Power dissipation: 313W
Mounting: THT
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Gate charge: 107nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Power dissipation: 313W
Mounting: THT
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES irf3315spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3703PBF IRF3703PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 230W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 164 Stücke:
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164+0.43 EUR
Mindestbestellmenge: 164
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES BSS123NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 17566 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
715+0.1 EUR
758+0.094 EUR
985+0.073 EUR
1097+0.065 EUR
1194+0.06 EUR
1303+0.055 EUR
Mindestbestellmenge: 556
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain current: 20A
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E42CFD251E11C&compId=BSZ110N08NS5-DTE.pdf?ci_sign=f275ad3f127399cd10fc2d635f9bdc2dfb4fa4d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
auf Bestellung 363 Stücke:
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363+0.2 EUR
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IR2130SPBF IR2130SPBF INFINEON TECHNOLOGIES ir2130_2132.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
auf Bestellung 24 Stücke:
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10+7.18 EUR
13+5.79 EUR
Mindestbestellmenge: 10
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IR2133SPBF IR2133SPBF INFINEON TECHNOLOGIES IRSDS12168-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 1.6W
auf Bestellung 14 Stücke:
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8+9.61 EUR
9+8.65 EUR
10+7.64 EUR
Mindestbestellmenge: 8
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IRFB4321PBF IRFB4321PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ADE1C9B8ADAEFE27&compId=IRFB4321PBF-DTE.pdf?ci_sign=ac172432e5caf556bc0aacd18b384ef70e2cb9b8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
24+3 EUR
26+2.76 EUR
50+2.55 EUR
100+2.29 EUR
Mindestbestellmenge: 23
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES irfb4332pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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26+2.82 EUR
32+2.29 EUR
34+2.14 EUR
Mindestbestellmenge: 26
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AIHD10N60RFATMA1 AIHD10N60RFATMA1 INFINEON TECHNOLOGIES AIHD10N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES irs2109.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 850ns
Power: 1.6W
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
Mindestbestellmenge: 33
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6DBF1A6F5005056AB5A8F&compId=irfs3307zpbf.pdf?ci_sign=745ca6cfbb3bee6d11b93d0f36d18bb15218eaea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
29+2.55 EUR
35+2.04 EUR
39+1.84 EUR
50+1.62 EUR
Mindestbestellmenge: 27
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IRFIZ44NPBF IRFIZ44NPBF INFINEON TECHNOLOGIES irfiz44n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
44+1.65 EUR
50+1.44 EUR
57+1.27 EUR
100+1.11 EUR
Mindestbestellmenge: 38
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IRFR120NTRPBF IRFR120NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C03E7E09C8F1A303005056AB0C4F&compId=irfr120npbf.pdf?ci_sign=7f63985421ca573e2961fdac6eac7824a6b1dc3f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 9.1A
Kind of channel: enhancement
Power dissipation: 39W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1784 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
125+0.57 EUR
145+0.49 EUR
154+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.37 EUR
Mindestbestellmenge: 65
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IRFR6215TRPBF IRFR6215TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C517D20416F1A303005056AB0C4F&compId=irfr6215pbf.pdf?ci_sign=bf33c014ce9fd9f0e1f0849046b1f285842f7d28 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
55+1.31 EUR
64+1.13 EUR
100+0.89 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 44
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IRFSL4410ZPBF IRFSL4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 97A
Drain-source voltage: 100V
Power dissipation: 230W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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BC856SH6327 BC856SH6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
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557+0.13 EUR
746+0.096 EUR
1000+0.086 EUR
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77521E006811C&compId=BSS139H6327XTSA1.pdf?ci_sign=3ea77d60429e3dc7332d53b5d8ff41a954bf7f5d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
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341+0.21 EUR
394+0.18 EUR
500+0.17 EUR
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES BSP170PH6327XTSA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1442 Stücke:
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63+1.14 EUR
94+0.76 EUR
128+0.56 EUR
145+0.5 EUR
200+0.44 EUR
500+0.38 EUR
1000+0.34 EUR
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
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IGW25T120FKSA1 IGW25T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
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IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
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IPD90N04S405ATMA1 IPD90N04S405ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAEC1DA6D7B820&compId=IPD90N04S405.pdf?ci_sign=e5fc15d5072846873debc1d1932ae19d845a375d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 344A
Power dissipation: 65W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel
Kind of channel: enhancement
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES IPD068P03L3GATMA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Gate-source voltage: ±20V
Power dissipation: 100W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 TLE7181EMXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC7045A66088A15&compId=TLE7181EM.pdf?ci_sign=31b4483a018d90a92ae0ce3f533bdf2ef721bf75 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
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TLE7182EMXUMA1 TLE7182EMXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC71BF6EAAB8A15&compId=TLE7182EM.pdf?ci_sign=24d6ba42ecb5c5995c5642959ae1b5354a6d60ff Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPA07N60C3 SPA07N60C3 INFINEON TECHNOLOGIES SPA07N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 68 Stücke:
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40+1.8 EUR
51+1.42 EUR
66+1.09 EUR
68+1.06 EUR
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SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES SPx07N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 127 Stücke:
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76+0.94 EUR
84+0.86 EUR
90+0.8 EUR
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IPB025N10N3GATMA1 IPB025N10N3GATMA1 INFINEON TECHNOLOGIES IPB025N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 62 Stücke:
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12+6.13 EUR
14+5.48 EUR
16+4.52 EUR
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IMW65R107M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhancement
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IMZA65R107M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247-4
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9965511A9A11C&compId=IPP020N06NAKSA1-DTE.pdf?ci_sign=83fbe3c4ddd538ca4cd145e6a0d205e58922a5e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N06NATMA1 IPB014N06NATMA1 INFINEON TECHNOLOGIES IPB014N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.4mΩ
Drain current: 180A
Drain-source voltage: 60V
Power dissipation: 214W
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 47 Stücke:
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17+4.35 EUR
18+3.99 EUR
23+3.2 EUR
26+2.83 EUR
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IPB034N06L3GATMA1 IPB034N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E22AC82A411C&compId=IPB034N06L3G-DTE.pdf?ci_sign=e2d349a57cd9a28e9c7dbde0c8d7a4b00ed0cf76 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BTS452T BTS452T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C802CDDF0469&compId=BTS452T.pdf?ci_sign=5923cb0a238c32d8e287782b944aa70f07c70e0a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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IRLR8256TRPBF IRLR8256TRPBF INFINEON TECHNOLOGIES irlr8256pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AIGW40N65F5XKSA1 AIGW40N65F5XKSA1 INFINEON TECHNOLOGIES AIGW40N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Turn-off time: 178ns
auf Bestellung 177 Stücke:
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10+7.21 EUR
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 INFINEON TECHNOLOGIES AIGW40N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-off time: 160ns
Gate charge: 92nC
Turn-on time: 31ns
auf Bestellung 161 Stücke:
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60+6.05 EUR
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AIKW40N65DF5XKSA1 AIKW40N65DF5XKSA1 INFINEON TECHNOLOGIES AIKW40N65DF5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
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AIKW40N65DH5XKSA1 AIKW40N65DH5XKSA1 INFINEON TECHNOLOGIES AIKW40N65DH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IRFH5010TRPBF IRFH5010TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B4FD5221A9F1A303005056AB0C4F&compId=irfh5010pbf.pdf?ci_sign=dc0d60716a5924fc56a535cd67f663c50e1ec509 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5015TRPBF IRFH5015TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B51A9A0F40F1A303005056AB0C4F&compId=irfh5015pbf.pdf?ci_sign=eb6ae4a5494ec8a6c1560e3bc7b19829447ecba1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1 INFINEON TECHNOLOGIES AIKW50N65DH5XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
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AIKW50N65DF5XKSA1 AIKW50N65DF5XKSA1 INFINEON TECHNOLOGIES AIKW50N65DF5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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BTS4141N BTS4141N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E631CB72C469&compId=BTS4141N.pdf?ci_sign=64b0e0c8fb54d7ae515db22073e7a17b310fd5c8 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output voltage: 12...45V
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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BTS462T pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
34+2.12 EUR
36+2.02 EUR
Mindestbestellmenge: 32
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IRF1104PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
Mindestbestellmenge: 56
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IRFB4229PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
24+3.1 EUR
50+2.37 EUR
100+1.86 EUR
250+1.52 EUR
Mindestbestellmenge: 22
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BAT1504WH6327XTSA1 BAT1503WE6327HTSA1.pdf
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Mounting: SMD
Case: SOT323
Semiconductor structure: double series
Type of diode: Schottky switching
Power dissipation: 0.1W
Load current: 0.11A
Max. off-state voltage: 4V
auf Bestellung 935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
172+0.42 EUR
194+0.37 EUR
227+0.32 EUR
274+0.26 EUR
286+0.25 EUR
Mindestbestellmenge: 143
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BTS711L1 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.16 EUR
16+4.72 EUR
25+4.35 EUR
50+4.22 EUR
Mindestbestellmenge: 12
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IRF300P226 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169
IRF300P226
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Gate charge: 191nC
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Drain current: 53A
Power dissipation: 313W
Mounting: THT
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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IRF300P227 pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab
IRF300P227
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Gate charge: 107nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Power dissipation: 313W
Mounting: THT
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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IRF3315STRLPBF irf3315spbf.pdf
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3703PBF pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8
IRF3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 230W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
164+0.43 EUR
Mindestbestellmenge: 164
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BSS123NH6327XTSA1 BSS123NH6327XTSA1.pdf
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 17566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
715+0.1 EUR
758+0.094 EUR
985+0.073 EUR
1097+0.065 EUR
1194+0.06 EUR
1303+0.055 EUR
Mindestbestellmenge: 556
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BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain current: 20A
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E42CFD251E11C&compId=BSZ110N08NS5-DTE.pdf?ci_sign=f275ad3f127399cd10fc2d635f9bdc2dfb4fa4d0
BSZ110N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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BCR133SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a
BCR133SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
auf Bestellung 363 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
363+0.2 EUR
Mindestbestellmenge: 363
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IR2130SPBF description ir2130_2132.pdf
IR2130SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
13+5.79 EUR
Mindestbestellmenge: 10
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IR2133SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 1.6W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.61 EUR
9+8.65 EUR
10+7.64 EUR
Mindestbestellmenge: 8
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IRFB4321PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ADE1C9B8ADAEFE27&compId=IRFB4321PBF-DTE.pdf?ci_sign=ac172432e5caf556bc0aacd18b384ef70e2cb9b8
IRFB4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
24+3 EUR
26+2.76 EUR
50+2.55 EUR
100+2.29 EUR
Mindestbestellmenge: 23
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IRFB4332PbF irfb4332pbf.pdf
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
32+2.29 EUR
34+2.14 EUR
Mindestbestellmenge: 26
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AIHD10N60RFATMA1 AIHD10N60RF.pdf
AIHD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRS21094PBF description irs2109.pdf
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 850ns
Power: 1.6W
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108PBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108SPBF irs2108.pdf
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
Mindestbestellmenge: 33
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IRFB3307ZPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6DBF1A6F5005056AB5A8F&compId=irfs3307zpbf.pdf?ci_sign=745ca6cfbb3bee6d11b93d0f36d18bb15218eaea
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
29+2.55 EUR
35+2.04 EUR
39+1.84 EUR
50+1.62 EUR
Mindestbestellmenge: 27
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IRFIZ44NPBF irfiz44n.pdf
IRFIZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
44+1.65 EUR
50+1.44 EUR
57+1.27 EUR
100+1.11 EUR
Mindestbestellmenge: 38
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IRFR120NTRPBF description pVersion=0046&contRep=ZT&docId=E221C03E7E09C8F1A303005056AB0C4F&compId=irfr120npbf.pdf?ci_sign=7f63985421ca573e2961fdac6eac7824a6b1dc3f
IRFR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 9.1A
Kind of channel: enhancement
Power dissipation: 39W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
125+0.57 EUR
145+0.49 EUR
154+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.37 EUR
Mindestbestellmenge: 65
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IRFR6215TRPBF pVersion=0046&contRep=ZT&docId=E221C517D20416F1A303005056AB0C4F&compId=irfr6215pbf.pdf?ci_sign=bf33c014ce9fd9f0e1f0849046b1f285842f7d28
IRFR6215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
55+1.31 EUR
64+1.13 EUR
100+0.89 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 44
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IRFSL4410ZPBF irfb4410zpbf.pdf
IRFSL4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 97A
Drain-source voltage: 100V
Power dissipation: 230W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 BC856UE6327.pdf
BC856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
365+0.2 EUR
557+0.13 EUR
746+0.096 EUR
1000+0.086 EUR
Mindestbestellmenge: 278
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BSS139H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77521E006811C&compId=BSS139H6327XTSA1.pdf?ci_sign=3ea77d60429e3dc7332d53b5d8ff41a954bf7f5d
BSS139H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 7469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
228+0.31 EUR
341+0.21 EUR
394+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 148
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BSP170PH6327XTSA1 BSP170PH6327XTSA1-DTE.PDF
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
94+0.76 EUR
128+0.56 EUR
145+0.5 EUR
200+0.44 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 63
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IRS21864SPBF irs2186pbf.pdf
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW25T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3
IGW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IRL7833STRLPBF pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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IPD90N04S405ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAEC1DA6D7B820&compId=IPD90N04S405.pdf?ci_sign=e5fc15d5072846873debc1d1932ae19d845a375d
IPD90N04S405ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 344A
Power dissipation: 65W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1.pdf
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Gate-source voltage: ±20V
Power dissipation: 100W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N15N3GATMA1 IPB065N15N3G-DTE.pdf
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7181EMXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC7045A66088A15&compId=TLE7181EM.pdf?ci_sign=31b4483a018d90a92ae0ce3f533bdf2ef721bf75
TLE7181EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7182EMXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC71BF6EAAB8A15&compId=TLE7182EM.pdf?ci_sign=24d6ba42ecb5c5995c5642959ae1b5354a6d60ff
TLE7182EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPA07N60C3 description SPA07N60C3.pdf
SPA07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
51+1.42 EUR
66+1.09 EUR
68+1.06 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SPP07N60C3 SPx07N60C3.pdf
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
76+0.94 EUR
84+0.86 EUR
90+0.8 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
IPB025N10N3GATMA1 IPB025N10N3G-DTE.pdf
IPB025N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
14+5.48 EUR
16+4.52 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247-4
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9965511A9A11C&compId=IPP020N06NAKSA1-DTE.pdf?ci_sign=83fbe3c4ddd538ca4cd145e6a0d205e58922a5e7
IPP020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N06NATMA1 IPB014N06N-DTE.pdf
IPB014N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.4mΩ
Drain current: 180A
Drain-source voltage: 60V
Power dissipation: 214W
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
18+3.99 EUR
23+3.2 EUR
26+2.83 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPB034N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E22AC82A411C&compId=IPB034N06L3G-DTE.pdf?ci_sign=e2d349a57cd9a28e9c7dbde0c8d7a4b00ed0cf76
IPB034N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS452T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C802CDDF0469&compId=BTS452T.pdf?ci_sign=5923cb0a238c32d8e287782b944aa70f07c70e0a
BTS452T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8256TRPBF irlr8256pbf.pdf
IRLR8256TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AIGW40N65F5XKSA1 AIGW40N65F5.pdf
AIGW40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Turn-off time: 178ns
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
Mindestbestellmenge: 10
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AIGW40N65H5XKSA1 AIGW40N65H5.pdf
AIGW40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-off time: 160ns
Gate charge: 92nC
Turn-on time: 31ns
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.82 EUR
11+6.94 EUR
30+6.38 EUR
60+6.05 EUR
90+5.91 EUR
Mindestbestellmenge: 9
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AIKW40N65DF5XKSA1 AIKW40N65DF5.pdf
AIKW40N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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AIKW40N65DH5XKSA1 AIKW40N65DH5.pdf
AIKW40N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IRFH5010TRPBF pVersion=0046&contRep=ZT&docId=E221B4FD5221A9F1A303005056AB0C4F&compId=irfh5010pbf.pdf?ci_sign=dc0d60716a5924fc56a535cd67f663c50e1ec509
IRFH5010TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5015TRPBF pVersion=0046&contRep=ZT&docId=E221B51A9A0F40F1A303005056AB0C4F&compId=irfh5015pbf.pdf?ci_sign=eb6ae4a5494ec8a6c1560e3bc7b19829447ecba1
IRFH5015TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1.pdf
AIKW50N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N65DF5XKSA1 AIKW50N65DF5.pdf
AIKW50N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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BTS4141N description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E631CB72C469&compId=BTS4141N.pdf?ci_sign=64b0e0c8fb54d7ae515db22073e7a17b310fd5c8
BTS4141N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output voltage: 12...45V
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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