Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148599) > Seite 2466 nach 2477
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IDW40G65C5BXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W Power dissipation: 112W Case: PG-TO247-3 Mounting: THT Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Max. forward voltage: 1.8V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 87A Leakage current: 4.1µA Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: -16...5V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SAK-TC1797-384F150E | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC Type of integrated circuit: microcontroller Case: BGA416 Memory: 3MB FLASH Mounting: SMD Supply voltage: 3.5...5V DC Interface: I2C; SPI; UART |
Produkt ist nicht verfügbar |
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BCR10PNH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 130MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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IRLHS6242TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1.98W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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IKD04N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Power dissipation: 75W Case: DPAK Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Collector current: 4A Pulsed collector current: 12A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
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XMC4800 RELAX ETHERCAT KIT | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144 Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2 Kit contents: development board with XMCmicrocontroller; expansion board Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2 Application: building automation; CAV; EtherCAT; motors; photovoltaics Kind of architecture: Cortex M4 Type of development kit: ARM Infineon Family: XMC4800 Components: XMC4800-F144 Number of add-on connectors: 2 |
Produkt ist nicht verfügbar |
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IPW60R070C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BCR112 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
Produkt ist nicht verfügbar |
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BCR108SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ Frequency: 170MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT363 |
auf Bestellung 3507 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR148SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 100MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2668 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR191E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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BCR135WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Mounting: SMD Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT323 Frequency: 150MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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BCR192WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 200MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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BCR129E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD90R1K2C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.2A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD90R1K2C3BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.2A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW08T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3 Collector current: 8A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Collector-emitter voltage: 1.2kV Turn-on time: 63ns Turn-off time: 520ns Type of transistor: IGBT Power dissipation: 70W Kind of package: tube Gate charge: 53nC |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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IDWD30G120C5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 0.24kA Power dissipation: 332W |
Produkt ist nicht verfügbar |
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CY7C1470V25-200AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
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CY7C1470V25-200BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY7C1470V33-167AXC | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY7C1470V33-167AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY7C1470V33-167BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF9335TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.4A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ISP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Industrial PROFET |
auf Bestellung 2060 Stücke: Lieferzeit 14-21 Tag (e) |
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2EDL05I06PFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Output current: -0.7...0.36A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: high-/low-side; IGBT gate driver Topology: IGBT half-bridge Voltage class: 600V Mounting: SMD Case: PG-DSO-8 Supply voltage: 10...20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Drain-source voltage: 600V Drain current: 0.09A On-state resistance: 45Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT89 |
auf Bestellung 532 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN50R800CEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223 Case: PG-SOT223 Mounting: SMD Drain current: 4.8A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 12.4nC Technology: CoolMOS™ CE Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
auf Bestellung 2903 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN50R950CEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223 Case: PG-SOT223 Mounting: SMD Drain current: 4.2A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 10.5nC Technology: CoolMOS™ CE Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
auf Bestellung 2803 Stücke: Lieferzeit 14-21 Tag (e) |
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TLF80511TFV50ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 3.3...40V |
auf Bestellung 552 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ0506NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain current: 40A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 27W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IPD50R399CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Drain current: 9A On-state resistance: 0.399Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB50R199CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD50R520CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Drain current: 7.1A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 66W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BSC0501NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BSC0504NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain current: 64A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB50R140CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain current: 3.1A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB50R250CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB50R299CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain current: 12A On-state resistance: 0.299Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Case: PG-TO252-3-313 Mounting: SMD Drain current: -45A On-state resistance: 12.6mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Technology: OptiMOS® -P2 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -200A Drain-source voltage: -40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IPD50R950CEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Drain current: 4.3A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 34W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DD260N16K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 260A Case: BG-PB50-1 Max. forward voltage: 1.32V Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IAUS260N10S5N019TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W Case: PG-HDSOP-16 Drain-source voltage: 100V Drain current: 91A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: reel; tape Gate charge: 166nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 995A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IPB107N20NAATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Case: PG-TO263-3 Drain-source voltage: 200V Drain current: 88A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 820 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB107N20N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Case: PG-TO263-3 Drain-source voltage: 200V Drain current: 88A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRFL4315TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.6A Power dissipation: 2.8W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TD122N22KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw Max. load current: 220A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
CY7C15632KV18-400BZXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; 0÷70°C Supply voltage: 1.7...1.9V DC Frequency: 400MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 4Mx18bit Kind of package: in-tray Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: 0...70°C Case: FBGA165 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TLD5097EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1 Case: PG-TSDSO-14 Operating voltage: 4.5...45V DC Output current: -550...380mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: linear dimming; PWM Protection: overheating OTP Technology: Litix™ Kind of integrated circuit: LED driver; SMPS controller Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TLD5098EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1 Case: PG-TSDSO-14 Operating voltage: 4.5...45V DC Output current: -550...380mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: linear dimming; PWM Protection: overheating OTP Technology: Litix™ Kind of integrated circuit: LED driver; SMPS controller Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BFP196E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 0.15A Power dissipation: 0.7W Case: SOT143 Mounting: SMD Kind of package: reel; tape Frequency: 7.5GHz Current gain: 70...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IDH08G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 60A Leakage current: 1.6µA Power dissipation: 76W Kind of package: tube Heatsink thickness: 1.17...137mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPAN60R210PFD7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A Mounting: THT Case: TO220FP Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 386mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Technology: CoolMOS™ PFD7 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IPD60R210PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Mounting: SMD Case: TO252 Drain-source voltage: 600V Drain current: 10A On-state resistance: 386mΩ Type of transistor: N-MOSFET Power dissipation: 64W Polarisation: unipolar Technology: CoolMOS™ PFD7 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF2907ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BGX50AE6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape Max. off-state voltage: 50V Load current: 0.14A Case: SOT143 Semiconductor structure: bridge rectifier Features of semiconductor devices: fast switching Mounting: SMD Power dissipation: 0.21W Kind of package: reel; tape Type of diode: switching |
auf Bestellung 2396 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP023N08N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IDW40G65C5BXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Power dissipation: 112W
Case: PG-TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 87A
Leakage current: 4.1µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Power dissipation: 112W
Case: PG-TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 87A
Leakage current: 4.1µA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50P04P4L11ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SAK-TC1797-384F150E |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR10PNH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHS6242TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKD04N60RFATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC4800 RELAX ETHERCAT KIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R070C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR112 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR108SH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
auf Bestellung 3507 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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562+ | 0.13 EUR |
642+ | 0.11 EUR |
736+ | 0.10 EUR |
782+ | 0.09 EUR |
3000+ | 0.09 EUR |
BCR148SH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2668 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
380+ | 0.19 EUR |
515+ | 0.14 EUR |
575+ | 0.12 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |
BCR191E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
325+ | 0.21 EUR |
BCR135SH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR135WH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR192WH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR129E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD90R1K2C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPD90R1K2C3BTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IKW08T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
Gate charge: 53nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
Gate charge: 53nC
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
31+ | 2.35 EUR |
33+ | 2.22 EUR |
IDWD30G120C5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1470V25-200AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
CY7C1470V25-200BZI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1470V33-167AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V33-167AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1470V33-167BZI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9335TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISP752T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
37+ | 1.96 EUR |
42+ | 1.72 EUR |
44+ | 1.63 EUR |
500+ | 1.57 EUR |
2EDL05I06PFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 600V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 600V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS225H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
auf Bestellung 532 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.88 EUR |
116+ | 0.62 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
500+ | 0.32 EUR |
IPN50R800CEATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 12.4nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 12.4nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
auf Bestellung 2903 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
98+ | 0.73 EUR |
109+ | 0.66 EUR |
115+ | 0.63 EUR |
119+ | 0.60 EUR |
IPN50R950CEATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.2A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Drain current: 4.2A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
auf Bestellung 2803 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
164+ | 0.44 EUR |
207+ | 0.35 EUR |
220+ | 0.33 EUR |
TLF80511TFV50ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
59+ | 1.22 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
500+ | 0.90 EUR |
BSZ0506NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain current: 40A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain current: 40A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50R399CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 9A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 9A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB50R199CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50R520CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC0501NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC0504NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 64A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain current: 64A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB50R140CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 3.1A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 3.1A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPB50R250CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPB50R299CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 12A
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain current: 12A
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPD50P04P413ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Case: PG-TO252-3-313
Mounting: SMD
Drain current: -45A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -40V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Case: PG-TO252-3-313
Mounting: SMD
Drain current: -45A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -40V
Produkt ist nicht verfügbar
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IPD50R950CEATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 4.3A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain current: 4.3A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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DD260N16K |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Drain-source voltage: 100V
Drain current: 91A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 166nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 995A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Drain-source voltage: 100V
Drain current: 91A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 166nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 995A
Mounting: SMD
Produkt ist nicht verfügbar
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IPB107N20NAATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 820 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.95 EUR |
9+ | 8.11 EUR |
10+ | 7.66 EUR |
250+ | 7.46 EUR |
IPB107N20N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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IRFL4315TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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TD122N22KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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CY7C15632KV18-400BZXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; 0÷70°C
Supply voltage: 1.7...1.9V DC
Frequency: 400MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 4Mx18bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: FBGA165
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; 0÷70°C
Supply voltage: 1.7...1.9V DC
Frequency: 400MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 4Mx18bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: FBGA165
Produkt ist nicht verfügbar
Im Einkaufswagen
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TLD5097EPXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 7.5GHz
Current gain: 70...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 7.5GHz
Current gain: 70...140
Produkt ist nicht verfügbar
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IDH08G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
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IPAN60R210PFD7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 386mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 386mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPD60R210PFD7SAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Case: TO252
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 386mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Case: TO252
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 386mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF2907ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BGX50AE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Mounting: SMD
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Mounting: SMD
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
auf Bestellung 2396 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
414+ | 0.17 EUR |
468+ | 0.15 EUR |
610+ | 0.12 EUR |
642+ | 0.11 EUR |
IPP023N08N5AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB65R190CFDATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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