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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES IKW50N60DTP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 303 Stücke:
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19+3.85 EUR
29+2.53 EUR
35+2.1 EUR
120+2.04 EUR
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES IKW50N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 139 Stücke:
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15+5.11 EUR
20+3.73 EUR
30+3.58 EUR
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IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES IKW50N60T-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.06 EUR
18+4 EUR
30+3.86 EUR
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AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 INFINEON TECHNOLOGIES AIKW50N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW50N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES IKFW50N60ET.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IPD50N06S409ATMA2 INFINEON TECHNOLOGIES INFNS13307-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50N06S4L08ATMA2 INFINEON TECHNOLOGIES INFNS14103-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 INFINEON TECHNOLOGIES IPD50N06S4L12.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1616 Stücke:
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55+1.3 EUR
82+0.88 EUR
91+0.79 EUR
100+0.75 EUR
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IPD350N06LGBTMA1 IPD350N06LGBTMA1 INFINEON TECHNOLOGIES IPD350N06LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 1722 Stücke:
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64+1.13 EUR
101+0.71 EUR
154+0.47 EUR
500+0.45 EUR
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IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES irf7313pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 3479 Stücke:
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65+1.1 EUR
93+0.78 EUR
138+0.52 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.33 EUR
Mindestbestellmenge: 65
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AUIRF7341QTR AUIRF7341QTR INFINEON TECHNOLOGIES auirf7341q.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 INFINEON TECHNOLOGIES BSS84PWH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
589+0.12 EUR
834+0.086 EUR
960+0.075 EUR
1263+0.057 EUR
1425+0.05 EUR
Mindestbestellmenge: 417
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
Mindestbestellmenge: 12
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IRFZ44NPBF IRFZ44NPBF INFINEON TECHNOLOGIES IRFZ44Npbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 17.5mΩ
Produkt ist nicht verfügbar
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IRFZ44NSTRLPBF IRFZ44NSTRLPBF INFINEON TECHNOLOGIES irfz44nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW60N60H3FKSA1 IGW60N60H3FKSA1 INFINEON TECHNOLOGIES IGW60N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.48 EUR
13+5.81 EUR
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IKW60N60H3FKSA1 IKW60N60H3FKSA1 INFINEON TECHNOLOGIES IKW60N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.54 EUR
12+5.98 EUR
14+5.48 EUR
30+4.7 EUR
Mindestbestellmenge: 11
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IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW60N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
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IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IRF640NPBF IRF640NPBF INFINEON TECHNOLOGIES irf640n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 6670 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
89+0.81 EUR
104+0.69 EUR
112+0.64 EUR
250+0.57 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.42 EUR
5000+0.4 EUR
Mindestbestellmenge: 51
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IRF640NSTRLPBF IRF640NSTRLPBF INFINEON TECHNOLOGIES irf640npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRL540NPBF IRL540NPBF INFINEON TECHNOLOGIES irl540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 3791 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
79+0.91 EUR
86+0.84 EUR
92+0.78 EUR
100+0.73 EUR
250+0.66 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.53 EUR
Mindestbestellmenge: 44
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IRFP4668PBF IRFP4668PBF INFINEON TECHNOLOGIES irfp4668pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD04N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES SPP24N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.89 EUR
17+4.4 EUR
25+3.89 EUR
Mindestbestellmenge: 15
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IRF3710LPBF IRF3710LPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF3710PBF IRF3710PBF INFINEON TECHNOLOGIES irf3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
56+1.3 EUR
65+1.11 EUR
100+1.03 EUR
250+0.93 EUR
Mindestbestellmenge: 33
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IRF3710STRLPBF IRF3710STRLPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.67 EUR
41+1.75 EUR
53+1.36 EUR
100+1.19 EUR
250+0.97 EUR
Mindestbestellmenge: 27
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IRF3710STRRPBF IRF3710STRRPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3710ZPBF IRF3710ZPBF INFINEON TECHNOLOGIES irf3710z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
54+1.35 EUR
62+1.17 EUR
74+0.98 EUR
100+0.87 EUR
Mindestbestellmenge: 34
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IRF3710ZSTRLPBF IRF3710ZSTRLPBF INFINEON TECHNOLOGIES irf3710zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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AUIRF3710ZSTRL AUIRF3710ZSTRL INFINEON TECHNOLOGIES auirf3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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IRFP250MPBF IRFP250MPBF INFINEON TECHNOLOGIES irfp250mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
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IRFP250NPBF IRFP250NPBF INFINEON TECHNOLOGIES irfp250n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
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IRFP260MPBF IRFP260MPBF INFINEON TECHNOLOGIES irfp260mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFP260NPBF IRFP260NPBF INFINEON TECHNOLOGIES irfp260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1374 Stücke:
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50+2.26 EUR
100+2.07 EUR
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IRFP2907PBF IRFP2907PBF INFINEON TECHNOLOGIES irfp2907.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 111 Stücke:
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IRF1407PBF IRF1407PBF INFINEON TECHNOLOGIES irf1407pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
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IRF1407STRLPBF INFINEON TECHNOLOGIES infineon-irf1407spbf-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
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IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES IKP08N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
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SPA08N80C3 SPA08N80C3 INFINEON TECHNOLOGIES INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES IKA10N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
auf Bestellung 71 Stücke:
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 INFINEON TECHNOLOGIES IGB15N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Collector current: 23A
Gate-emitter voltage: ±20V
Turn-on time: 26ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-off time: 147ns
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES IKB15N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Collector current: 18A
Gate-emitter voltage: ±20V
Turn-on time: 33ns
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 172ns
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IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES IKP15N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Manufacturer series: H5
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES SPW20N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 414 Stücke:
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26+2.77 EUR
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SPP20N60C3 SPP20N60C3 INFINEON TECHNOLOGIES spp20n60c3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1103 Stücke:
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BSS169H6327XTSA1 BSS169H6327XTSA1 INFINEON TECHNOLOGIES BSS169H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 630 Stücke:
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139+0.51 EUR
197+0.36 EUR
268+0.27 EUR
307+0.23 EUR
368+0.19 EUR
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BC850CWH6327 BC850CWH6327 INFINEON TECHNOLOGIES Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 3993 Stücke:
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532+0.13 EUR
802+0.089 EUR
940+0.076 EUR
1058+0.068 EUR
1188+0.06 EUR
3000+0.05 EUR
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IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES IR2113SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 94 Stücke:
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21+3.53 EUR
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IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES IR2113STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 480 Stücke:
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27+2.66 EUR
30+2.46 EUR
33+2.22 EUR
50+2.06 EUR
100+1.94 EUR
125+1.92 EUR
250+1.83 EUR
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IRF5305PBF IRF5305PBF INFINEON TECHNOLOGIES irf5305.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Mounting: THT
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Gate charge: 42nC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Power dissipation: 110W
auf Bestellung 1542 Stücke:
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46+1.59 EUR
52+1.38 EUR
65+1.11 EUR
86+0.83 EUR
123+0.58 EUR
500+0.53 EUR
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IRF5305STRLPBF IRF5305STRLPBF INFINEON TECHNOLOGIES irf5305spbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
auf Bestellung 3292 Stücke:
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32+2.26 EUR
47+1.54 EUR
64+1.13 EUR
100+0.98 EUR
500+0.73 EUR
800+0.7 EUR
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IRF530NPBF IRF530NPBF INFINEON TECHNOLOGIES irf530n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Drain current: 17A
Gate charge: 24.7nC
On-state resistance: 90mΩ
Power dissipation: 79W
Technology: HEXFET®
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
auf Bestellung 1382 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
120+0.6 EUR
131+0.55 EUR
142+0.5 EUR
154+0.47 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 97
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IRF530NSTRLPBF IRF530NSTRLPBF INFINEON TECHNOLOGIES irf530nspbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Mounting: SMD
Kind of package: reel
Case: D2PAK
Drain current: 17A
Power dissipation: 3.8W
Technology: HEXFET®
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
66+1.09 EUR
100+0.77 EUR
250+0.65 EUR
500+0.55 EUR
800+0.53 EUR
Mindestbestellmenge: 46
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IRLR120NTRPBF IRLR120NTRPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13325 Stücke:
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85+0.84 EUR
98+0.74 EUR
117+0.61 EUR
128+0.56 EUR
250+0.5 EUR
500+0.46 EUR
1000+0.43 EUR
2000+0.39 EUR
4000+0.37 EUR
Mindestbestellmenge: 85
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ICE2QS03G ICE2QS03G INFINEON TECHNOLOGIES ICE2QS03G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 2358 Stücke:
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32+2.27 EUR
49+1.47 EUR
54+1.34 EUR
100+1.17 EUR
250+1.07 EUR
500+0.99 EUR
1000+0.97 EUR
Mindestbestellmenge: 32
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IRF1010EPBF IRF1010EPBF INFINEON TECHNOLOGIES irf1010e.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
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IRF1010ESTRLPBF IRF1010ESTRLPBF INFINEON TECHNOLOGIES Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
46+1.59 EUR
54+1.34 EUR
100+1.23 EUR
250+1.09 EUR
Mindestbestellmenge: 41
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IKW50N60DTPXKSA1 IKW50N60DTP.pdf
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
29+2.53 EUR
35+2.1 EUR
120+2.04 EUR
Mindestbestellmenge: 19
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IKW50N60H3FKSA1 IKW50N60H3.pdf
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
20+3.73 EUR
30+3.58 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T-dte.pdf
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
18+4 EUR
30+3.86 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CT.pdf
AIKW50N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3E.pdf
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ET.pdf
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L12ATMA2 IPD50N06S4L12.pdf
IPD50N06S4L12ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
82+0.88 EUR
91+0.79 EUR
100+0.75 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LG-DTE.pdf
IPD350N06LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 1722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
101+0.71 EUR
154+0.47 EUR
500+0.45 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IRF7313TRPBF description irf7313pbf.pdf
IRF7313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 3479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
93+0.78 EUR
138+0.52 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.33 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7341QTR auirf7341q.pdf
AUIRF7341QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 BSS84PWH6327XTSA1-dte.pdf
BSS84PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
589+0.12 EUR
834+0.086 EUR
960+0.075 EUR
1263+0.057 EUR
1425+0.05 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF IRFZ44Npbf.pdf
IRFZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 17.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF irfz44nspbf.pdf
IRFZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 IGW60N60H3-DTE.pdf
IGW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.48 EUR
13+5.81 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 IKW60N60H3.pdf
IKW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.54 EUR
12+5.98 EUR
14+5.48 EUR
30+4.7 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 IKFW60N60DH3E.pdf
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NPBF irf640n.pdf
IRF640NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 6670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
89+0.81 EUR
104+0.69 EUR
112+0.64 EUR
250+0.57 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.42 EUR
5000+0.4 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NSTRLPBF irf640npbf.pdf
IRF640NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL540NPBF irl540n.pdf
IRL540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 3791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
79+0.91 EUR
86+0.84 EUR
92+0.78 EUR
100+0.73 EUR
250+0.66 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.53 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBF irfp4668pbf.pdf
IRFP4668PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP24N60C3 description SPP24N60C3.pdf
SPP24N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
17+4.4 EUR
25+3.89 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF irf3710spbf.pdf
IRF3710LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF irf3710.pdf
IRF3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
56+1.3 EUR
65+1.11 EUR
100+1.03 EUR
250+0.93 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF irf3710spbf.pdf
IRF3710STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
41+1.75 EUR
53+1.36 EUR
100+1.19 EUR
250+0.97 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF irf3710spbf.pdf
IRF3710STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZPBF irf3710z.pdf
IRF3710ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
54+1.35 EUR
62+1.17 EUR
74+0.98 EUR
100+0.87 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZSTRLPBF irf3710zpbf.pdf
IRF3710ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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AUIRF3710ZSTRL auirf3710z.pdf
AUIRF3710ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRFP250MPBF irfp250mpbf.pdf
IRFP250MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
38+1.92 EUR
47+1.53 EUR
55+1.32 EUR
100+1.22 EUR
Mindestbestellmenge: 25
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IRFP250NPBF description irfp250n.pdf
IRFP250NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
37+1.96 EUR
41+1.77 EUR
50+1.64 EUR
100+1.53 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260MPBF irfp260mpbf.pdf
IRFP260MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
33+2.2 EUR
36+2.03 EUR
40+1.82 EUR
50+1.66 EUR
100+1.52 EUR
Mindestbestellmenge: 20
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IRFP260NPBF irfp260n.pdf
IRFP260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.28 EUR
27+2.67 EUR
30+2.43 EUR
50+2.26 EUR
100+2.07 EUR
250+1.89 EUR
400+1.79 EUR
500+1.73 EUR
800+1.63 EUR
Mindestbestellmenge: 17
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IRFP2907PBF irfp2907.pdf
IRFP2907PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
25+2.95 EUR
100+2.77 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407PBF description irf1407pbf.pdf
IRF1407PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 IKP08N65H5-DTE.pdf
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IKA10N65ET6XKSA2 IKA10N65ET6.pdf
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.69 EUR
50+1.62 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N65S5ATMA1 IGB15N65S5.pdf
IGB15N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Collector current: 23A
Gate-emitter voltage: ±20V
Turn-on time: 26ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-off time: 147ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 IKB15N65EH5.pdf
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Collector current: 18A
Gate-emitter voltage: ±20V
Turn-on time: 33ns
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 172ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5-DTE.pdf
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Manufacturer series: H5
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW20N60C3 SPW20N60C3.pdf
SPW20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
26+2.77 EUR
29+2.47 EUR
32+2.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60C3 spp20n60c3.pdf
SPP20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
39+1.86 EUR
Mindestbestellmenge: 26
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BSS169H6327XTSA1 BSS169H6327XTSA1.pdf
BSS169H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
197+0.36 EUR
268+0.27 EUR
307+0.23 EUR
368+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BC850CWH6327
BC850CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 3993 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
802+0.089 EUR
940+0.076 EUR
1058+0.068 EUR
1188+0.06 EUR
3000+0.05 EUR
Mindestbestellmenge: 385
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IR2113SPBF description IR2113SPBF.pdf
IR2113SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
24+2.99 EUR
Mindestbestellmenge: 21
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IR2113STRPBF IR2113STRPBF.pdf
IR2113STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
27+2.66 EUR
30+2.46 EUR
33+2.22 EUR
50+2.06 EUR
100+1.94 EUR
125+1.92 EUR
250+1.83 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF5305PBF irf5305.pdf
IRF5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Mounting: THT
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Gate charge: 42nC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Power dissipation: 110W
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
52+1.38 EUR
65+1.11 EUR
86+0.83 EUR
123+0.58 EUR
500+0.53 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRF5305STRLPBF description irf5305spbf.pdf
IRF5305STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
auf Bestellung 3292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
47+1.54 EUR
64+1.13 EUR
100+0.98 EUR
500+0.73 EUR
800+0.7 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRF530NPBF irf530n.pdf
IRF530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Drain current: 17A
Gate charge: 24.7nC
On-state resistance: 90mΩ
Power dissipation: 79W
Technology: HEXFET®
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
auf Bestellung 1382 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
120+0.6 EUR
131+0.55 EUR
142+0.5 EUR
154+0.47 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 97
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IRF530NSTRLPBF description irf530nspbf.pdf
IRF530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Mounting: SMD
Kind of package: reel
Case: D2PAK
Drain current: 17A
Power dissipation: 3.8W
Technology: HEXFET®
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
66+1.09 EUR
100+0.77 EUR
250+0.65 EUR
500+0.55 EUR
800+0.53 EUR
Mindestbestellmenge: 46
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IRLR120NTRPBF description irlr120npbf.pdf
IRLR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
98+0.74 EUR
117+0.61 EUR
128+0.56 EUR
250+0.5 EUR
500+0.46 EUR
1000+0.43 EUR
2000+0.39 EUR
4000+0.37 EUR
Mindestbestellmenge: 85
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ICE2QS03G ICE2QS03G.pdf
ICE2QS03G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 2358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
49+1.47 EUR
54+1.34 EUR
100+1.17 EUR
250+1.07 EUR
500+0.99 EUR
1000+0.97 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EPBF description irf1010e.pdf
IRF1010EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
Mindestbestellmenge: 67
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IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
46+1.59 EUR
54+1.34 EUR
100+1.23 EUR
250+1.09 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
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