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BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Mounting: SMD
Application: telecommunication
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
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IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F316ADF575611C&compId=IPD031N03LG-DTE.pdf?ci_sign=44aace7bc3066b2eb9d2220bfd76a10eefb1118b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 545 Stücke:
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56+1.29 EUR
61+1.17 EUR
81+0.88 EUR
86+0.84 EUR
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BABC34B7B3E11C&compId=IPD034N06N3G-DTE.pdf?ci_sign=3395175fdad7c29d5693c15a03df835870be8966 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 963 Stücke:
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25+2.96 EUR
38+1.92 EUR
51+1.42 EUR
54+1.33 EUR
500+1.29 EUR
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IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F32ECE512BE11C&compId=IPD075N03LG-DTE.pdf?ci_sign=0043c8fce757839b3a1d71add383451290e8ae9e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2455 Stücke:
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107+0.67 EUR
136+0.53 EUR
178+0.40 EUR
188+0.38 EUR
500+0.37 EUR
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IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F339715B71211C&compId=IPD135N03LG-DTE.pdf?ci_sign=68054a3fac3564e33e44811ddec17420b0dc86f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 21A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 814 Stücke:
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59+1.22 EUR
121+0.59 EUR
137+0.52 EUR
159+0.45 EUR
168+0.43 EUR
500+0.42 EUR
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IRF8736TRPBF IRF8736TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE837B9ABBF1A303005056AB0C4F&compId=irf8736pbf.pdf?ci_sign=9f437ccc0e59342b4111934b0de47bb61ce0fc80 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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IR2112PBF IR2112PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3404F1A6F5005056AB5A8F&compId=ir2112.pdf?ci_sign=595bac11ed51c7b446cca90d7246aae6dbde8538 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
Power: 1.6W
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22+3.25 EUR
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IR2112SPBF IR2112SPBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
Power: 1.25W
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IR2112STRPBF IR2112STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC156B99E195EA&compId=IR2112STRPBF.pdf?ci_sign=fff1ad2fc5e660ca130ec2d8a3d9c46d23cf73c8 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Power: 1.25W
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
32+2.26 EUR
34+2.13 EUR
100+2.10 EUR
250+2.06 EUR
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IRFR4105TRPBF IRFR4105TRPBF INFINEON TECHNOLOGIES irfr4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR4105ZTRL AUIRFR4105ZTRL INFINEON TECHNOLOGIES auirfr4105.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2121PBF IR2121PBF INFINEON TECHNOLOGIES ir2121.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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2ED020I12-FI 2ED020I12-FI INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C03E1F002831F1A6F5005056AB5A8F&compId=10027685.pdf?ci_sign=1ab77e8c2d7501fb50ace795d6564c2952906e00 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
auf Bestellung 723 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.28 EUR
29+2.55 EUR
30+2.40 EUR
500+2.32 EUR
Mindestbestellmenge: 14
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IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2B012CAA49F6749&compId=IKQ75N120CH3.pdf?ci_sign=e914df17ff7ca938dbbe26bac7072d720567b44d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 256W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B09007A649B8BF&compId=IKQ75N120CS6XKSA1.pdf?ci_sign=da4429176011a05079a0b9331dca0f7487332609 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.20 EUR
9+8.11 EUR
10+7.66 EUR
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IKQ75N120CT2XKSA1 IKQ75N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD9D0DB3C2749&compId=IKQ75N120CT2.pdf?ci_sign=0547d472e8cc63063fbb86787a5014befe4e4eea Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 237W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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IKY75N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF32EF40E8F3820&compId=IKY75N120CH3.pdf?ci_sign=88a902c54bc1c0842a5325041056e533d46c617e Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 256W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Technology: TRENCHSTOP™
Case: TO247PLUS-4
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 70ns
Turn-off time: 335ns
Produkt ist nicht verfügbar
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IKY75N120CS6XKSA1 IKY75N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0ACA311F3D8BF&compId=IKY75N120CS6.pdf?ci_sign=517ad18d7abb7b0f17daf362f1db5b2889eba0e3 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: TO247PLUS-4
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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BTS4140N BTS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E4633D744469&compId=BTS4140N.pdf?ci_sign=5e474e1a89c00f803a10d92fc322e39aa4180b9e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 2599 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
49+1.47 EUR
62+1.16 EUR
65+1.10 EUR
500+1.09 EUR
1000+1.06 EUR
Mindestbestellmenge: 44
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IRFB3006PBF IRFB3006PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6AAF1A6F5005056AB5A8F&compId=irfb3006pbf.pdf?ci_sign=af7f6f1ff8f7a54d3a732ebdbab42c7601952b23 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Case: TO220AB
Drain-source voltage: 60V
Drain current: 270A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 200nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IPA032N06N3GXKSA1 IPA032N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99C743C5DE11C&compId=IPA032N06N3G-DTE.pdf?ci_sign=b6736c10eb5920ad8ce93c1b17bc3994112976c6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.00 EUR
27+2.70 EUR
28+2.56 EUR
30+2.45 EUR
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IM69D120V01XTSA1 IM69D120V01XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF4CFB1ADEB3D1&compId=IM69D120.pdf?ci_sign=7d5b6d5b6672ed91108f10e47edb50eaf5d9a8d2 Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Integrated circuit features: MEMS
Kind of integrated circuit: digital microphone
Mounting: SMD
Case: LLGA-5-1
Supply voltage: 1.62...3.6V DC
Type of integrated circuit: driver/sensor
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130V01XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF5DF43158B3D1&compId=IM69D130.pdf?ci_sign=77c431dd75d1a04351a27800a6ef8a7d5fe39a18 Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Integrated circuit features: MEMS
Kind of integrated circuit: digital microphone
Mounting: SMD
Case: LLGA-5-1
Supply voltage: 1.62...3.6V DC
Type of integrated circuit: driver/sensor
Produkt ist nicht verfügbar
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IRLU120NPBF IRLU120NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 110 Stücke:
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63+1.14 EUR
110+0.64 EUR
Mindestbestellmenge: 63
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IRLU3110ZPBF IRLU3110ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 29
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IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLU7843PBF IRLU7843PBF INFINEON TECHNOLOGIES irlr7843pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Drain-source voltage: 30V
Drain current: 161A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: THT
Case: IPAK
Produkt ist nicht verfügbar
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IRLU8743PBF IRLU8743PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506C3BF1A6F5005056AB5A8F&compId=irlr8743pbf.pdf?ci_sign=ec1c3384cca0d2986348f4dc5fc8865732992d42 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
50+1.44 EUR
61+1.18 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 38
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IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A61F1A6F5005056AB5A8F&compId=irfs4410.pdf?ci_sign=7c5f492f325e1029f7935d9e50a854b0b56bff5f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
42+1.72 EUR
62+1.16 EUR
65+1.10 EUR
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A68F1A6F5005056AB5A8F&compId=irfb4410zpbf.pdf?ci_sign=a2eb2dffb8f0130fe236daaa55b1a2a68f3cccae description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
70+1.03 EUR
81+0.89 EUR
87+0.83 EUR
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES IRFR3710ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 2595 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
47+1.55 EUR
83+0.87 EUR
88+0.82 EUR
2000+0.80 EUR
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SPA15N60C3XKSA1 SPA15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
24+3.00 EUR
26+2.85 EUR
Mindestbestellmenge: 17
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AIHD15N60RATMA1 AIHD15N60RATMA1 INFINEON TECHNOLOGIES AIHD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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AIHD15N60RFATMA1 AIHD15N60RFATMA1 INFINEON TECHNOLOGIES AIHD15N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IRF2204PBF IRF2204PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.59 EUR
44+1.63 EUR
47+1.54 EUR
Mindestbestellmenge: 28
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DZ1070N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 2.6kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 2.8kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES auirf7640s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE4360D764D3D1&compId=IPN80R1K4P7.pdf?ci_sign=78fb10d99a14536f832bfbd20390774725556ad0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Mounting: SMD
Case: PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Version: ESD
Gate charge: 10nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
75+0.96 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 49
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BTS4142N BTS4142N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E84A11A0A469&compId=BTS4142N.pdf?ci_sign=3244447680817f5f79474ea635215c847d786be5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.35 EUR
38+1.89 EUR
41+1.77 EUR
Mindestbestellmenge: 17
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.88 EUR
21+3.47 EUR
22+3.29 EUR
60+3.20 EUR
Mindestbestellmenge: 15
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BGS14MPA9E6327XTSA1 INFINEON TECHNOLOGIES BGS14MPA9E6327.pdf Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SP4T
Supply voltage: 1.65...1.95V DC
Type of integrated circuit: RF switch
Interface: MIPI
Number of channels: 4
Produkt ist nicht verfügbar
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BSP762T BSP762T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697AB1C4CDAC469&compId=BSP762T.pdf?ci_sign=3e6d8828cac9092b5936c4f21f2326965e7952af Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 2444 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.20 EUR
41+1.77 EUR
43+1.67 EUR
1000+1.63 EUR
Mindestbestellmenge: 18
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BSP76E6433 BSP76E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975D357543C469&compId=BSP76E6433.pdf?ci_sign=ee41e26ebfd9d7f22ffc4ce630ef54f3ab400fc4 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2346 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
40+1.79 EUR
69+1.04 EUR
73+0.99 EUR
1000+0.97 EUR
2000+0.94 EUR
Mindestbestellmenge: 26
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IPB027N10N3GATMA1 IPB027N10N3GATMA1 INFINEON TECHNOLOGIES IPB027N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 INFINEON TECHNOLOGIES IPB027N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3636TRPBF IRLR3636TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11D881CECD5EA&compId=IRLR3636TRPBF.pdf?ci_sign=b6220a740730b6ab7b23975b33855f69170c505b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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ITS716G ITS716G INFINEON TECHNOLOGIES ITS716G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
22+3.37 EUR
23+3.19 EUR
Mindestbestellmenge: 11
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BTS6163D BTS6163D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE5FC44976A0FA8&compId=BTS6163D-DTE.pdf?ci_sign=9d33c8266458148b300f88bc2036db936d9aeb6f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Number of channels: 1
Output current: 5.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...62V DC
On-state resistance: 20mΩ
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.46 EUR
18+4.09 EUR
19+3.88 EUR
500+3.72 EUR
Mindestbestellmenge: 10
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BSP752R BSP752R INFINEON TECHNOLOGIES BSP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
29+2.55 EUR
43+1.67 EUR
46+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 19
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BTS441RG BTS441RG INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C19A98E98469&compId=BTS441RG.pdf?ci_sign=e61366597abf2906cf65152ad268807663a7c035 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.25 EUR
18+4.00 EUR
19+3.79 EUR
Mindestbestellmenge: 14
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BTS5210L BTS5210L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
On-state resistance: 0.11Ω
Output current: 1.8A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: BSOP12
Supply voltage: 5.5...40V DC
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.39 EUR
24+3.00 EUR
26+2.85 EUR
250+2.73 EUR
Mindestbestellmenge: 14
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BTS716GXUMA1 BTS716GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF308CE2FAF3D1&compId=BTS716G.pdf?ci_sign=b81448f0354de497b5d1a10935734c50374a9d3c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Output current: 2.6...5.3A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Power dissipation: 3.6W
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.78 EUR
21+3.43 EUR
23+3.23 EUR
Mindestbestellmenge: 13
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EA36E40F0469&compId=BTS4175SGA.pdf?ci_sign=b4727641779625566a455f41863bca8a403915c1 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFR5410TRPBF IRFR5410TRPBF INFINEON TECHNOLOGIES irfr5410pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1057 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
56+1.29 EUR
139+0.52 EUR
147+0.49 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BSP742R BSP742R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869764CDAC0A6469&compId=BSP742R.pdf?ci_sign=d73026d39c5d188555036d786d3243364a24976c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Mounting: SMD
Number of channels: 1
Case: SO8
On-state resistance: 0.25Ω
Kind of output: N-Channel
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
33+2.22 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSP742RIXUMA1 BSP742RIXUMA1 INFINEON TECHNOLOGIES Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Mounting: SMD
Application: telecommunication
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
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IPD031N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F316ADF575611C&compId=IPD031N03LG-DTE.pdf?ci_sign=44aace7bc3066b2eb9d2220bfd76a10eefb1118b
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
61+1.17 EUR
81+0.88 EUR
86+0.84 EUR
Mindestbestellmenge: 56
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IPD034N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BABC34B7B3E11C&compId=IPD034N06N3G-DTE.pdf?ci_sign=3395175fdad7c29d5693c15a03df835870be8966
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
38+1.92 EUR
51+1.42 EUR
54+1.33 EUR
500+1.29 EUR
Mindestbestellmenge: 25
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IPD075N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F32ECE512BE11C&compId=IPD075N03LG-DTE.pdf?ci_sign=0043c8fce757839b3a1d71add383451290e8ae9e
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
136+0.53 EUR
178+0.40 EUR
188+0.38 EUR
500+0.37 EUR
Mindestbestellmenge: 107
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IPD135N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F339715B71211C&compId=IPD135N03LG-DTE.pdf?ci_sign=68054a3fac3564e33e44811ddec17420b0dc86f2
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 21A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
121+0.59 EUR
137+0.52 EUR
159+0.45 EUR
168+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IRF8736TRPBF pVersion=0046&contRep=ZT&docId=E221AE837B9ABBF1A303005056AB0C4F&compId=irf8736pbf.pdf?ci_sign=9f437ccc0e59342b4111934b0de47bb61ce0fc80
IRF8736TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01G.pdf
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2112PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3404F1A6F5005056AB5A8F&compId=ir2112.pdf?ci_sign=595bac11ed51c7b446cca90d7246aae6dbde8538
IR2112PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
Power: 1.6W
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
22+3.25 EUR
Mindestbestellmenge: 17
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IR2112SPBF description ir2112.pdf
IR2112SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
Power: 1.25W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IR2112STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC156B99E195EA&compId=IR2112STRPBF.pdf?ci_sign=fff1ad2fc5e660ca130ec2d8a3d9c46d23cf73c8
IR2112STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Power: 1.25W
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
32+2.26 EUR
34+2.13 EUR
100+2.10 EUR
250+2.06 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4105TRPBF irfr4105pbf.pdf
IRFR4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR4105ZTRL auirfr4105.pdf
AUIRFR4105ZTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2121PBF ir2121.pdf
IR2121PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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2ED020I12-FI pVersion=0046&contRep=ZT&docId=E1C03E1F002831F1A6F5005056AB5A8F&compId=10027685.pdf?ci_sign=1ab77e8c2d7501fb50ace795d6564c2952906e00
2ED020I12-FI
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
auf Bestellung 723 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
29+2.55 EUR
30+2.40 EUR
500+2.32 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2B012CAA49F6749&compId=IKQ75N120CH3.pdf?ci_sign=e914df17ff7ca938dbbe26bac7072d720567b44d
IKQ75N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 256W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B09007A649B8BF&compId=IKQ75N120CS6XKSA1.pdf?ci_sign=da4429176011a05079a0b9331dca0f7487332609
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.20 EUR
9+8.11 EUR
10+7.66 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD9D0DB3C2749&compId=IKQ75N120CT2.pdf?ci_sign=0547d472e8cc63063fbb86787a5014befe4e4eea
IKQ75N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 237W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY75N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF32EF40E8F3820&compId=IKY75N120CH3.pdf?ci_sign=88a902c54bc1c0842a5325041056e533d46c617e
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 256W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Technology: TRENCHSTOP™
Case: TO247PLUS-4
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 70ns
Turn-off time: 335ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY75N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0ACA311F3D8BF&compId=IKY75N120CS6.pdf?ci_sign=517ad18d7abb7b0f17daf362f1db5b2889eba0e3
IKY75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: TO247PLUS-4
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E4633D744469&compId=BTS4140N.pdf?ci_sign=5e474e1a89c00f803a10d92fc322e39aa4180b9e
BTS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 2599 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
62+1.16 EUR
65+1.10 EUR
500+1.09 EUR
1000+1.06 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3006PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6AAF1A6F5005056AB5A8F&compId=irfb3006pbf.pdf?ci_sign=af7f6f1ff8f7a54d3a732ebdbab42c7601952b23
IRFB3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Case: TO220AB
Drain-source voltage: 60V
Drain current: 270A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 200nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPA032N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99C743C5DE11C&compId=IPA032N06N3G-DTE.pdf?ci_sign=b6736c10eb5920ad8ce93c1b17bc3994112976c6
IPA032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.00 EUR
27+2.70 EUR
28+2.56 EUR
30+2.45 EUR
Mindestbestellmenge: 24
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IM69D120V01XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF4CFB1ADEB3D1&compId=IM69D120.pdf?ci_sign=7d5b6d5b6672ed91108f10e47edb50eaf5d9a8d2
IM69D120V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Integrated circuit features: MEMS
Kind of integrated circuit: digital microphone
Mounting: SMD
Case: LLGA-5-1
Supply voltage: 1.62...3.6V DC
Type of integrated circuit: driver/sensor
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF5DF43158B3D1&compId=IM69D130.pdf?ci_sign=77c431dd75d1a04351a27800a6ef8a7d5fe39a18
IM69D130V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Integrated circuit features: MEMS
Kind of integrated circuit: digital microphone
Mounting: SMD
Case: LLGA-5-1
Supply voltage: 1.62...3.6V DC
Type of integrated circuit: driver/sensor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU120NPBF description pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34
IRLU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
110+0.64 EUR
Mindestbestellmenge: 63
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IRLU3110ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f
IRLU3110ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3410PBF pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU7843PBF irlr7843pbf.pdf
IRLU7843PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Drain-source voltage: 30V
Drain current: 161A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: THT
Case: IPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU8743PBF description pVersion=0046&contRep=ZT&docId=E1C04E95506C3BF1A6F5005056AB5A8F&compId=irlr8743pbf.pdf?ci_sign=ec1c3384cca0d2986348f4dc5fc8865732992d42
IRLU8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
50+1.44 EUR
61+1.18 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4410PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A61F1A6F5005056AB5A8F&compId=irfs4410.pdf?ci_sign=7c5f492f325e1029f7935d9e50a854b0b56bff5f
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
42+1.72 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4410ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A68F1A6F5005056AB5A8F&compId=irfb4410zpbf.pdf?ci_sign=a2eb2dffb8f0130fe236daaa55b1a2a68f3cccae
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
70+1.03 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3710ZTRPBF IRFR3710ZTRPBF.pdf
IRFR3710ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 2595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
47+1.55 EUR
83+0.87 EUR
88+0.82 EUR
2000+0.80 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
SPA15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPA15N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
24+3.00 EUR
26+2.85 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
AIHD15N60RATMA1 AIHD15N60R.pdf
AIHD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1 AIHD15N60RF.pdf
AIHD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IRF2204PBF description pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc
IRF2204PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
44+1.63 EUR
47+1.54 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N26K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 2.6kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 2.8kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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AUIRF7640S2TR auirf7640s2.pdf
AUIRF7640S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R1K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE4360D764D3D1&compId=IPN80R1K4P7.pdf?ci_sign=78fb10d99a14536f832bfbd20390774725556ad0
IPN80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Mounting: SMD
Case: PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Version: ESD
Gate charge: 10nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
75+0.96 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BTS4142N pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E84A11A0A469&compId=BTS4142N.pdf?ci_sign=3244447680817f5f79474ea635215c847d786be5
BTS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
38+1.89 EUR
41+1.77 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N135R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.88 EUR
21+3.47 EUR
22+3.29 EUR
60+3.20 EUR
Mindestbestellmenge: 15
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BGS14MPA9E6327XTSA1 BGS14MPA9E6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SP4T
Supply voltage: 1.65...1.95V DC
Type of integrated circuit: RF switch
Interface: MIPI
Number of channels: 4
Produkt ist nicht verfügbar
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BSP762T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697AB1C4CDAC469&compId=BSP762T.pdf?ci_sign=3e6d8828cac9092b5936c4f21f2326965e7952af
BSP762T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 2444 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.20 EUR
41+1.77 EUR
43+1.67 EUR
1000+1.63 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSP76E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975D357543C469&compId=BSP76E6433.pdf?ci_sign=ee41e26ebfd9d7f22ffc4ce630ef54f3ab400fc4
BSP76E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
40+1.79 EUR
69+1.04 EUR
73+0.99 EUR
1000+0.97 EUR
2000+0.94 EUR
Mindestbestellmenge: 26
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IPB027N10N3GATMA1 IPB027N10N3G-DTE.pdf
IPB027N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5-dte.pdf
IPB027N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11D881CECD5EA&compId=IRLR3636TRPBF.pdf?ci_sign=b6220a740730b6ab7b23975b33855f69170c505b
IRLR3636TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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ITS716G ITS716G.pdf
ITS716G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
22+3.37 EUR
23+3.19 EUR
Mindestbestellmenge: 11
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BTS6163D pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE5FC44976A0FA8&compId=BTS6163D-DTE.pdf?ci_sign=9d33c8266458148b300f88bc2036db936d9aeb6f
BTS6163D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Number of channels: 1
Output current: 5.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...62V DC
On-state resistance: 20mΩ
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.46 EUR
18+4.09 EUR
19+3.88 EUR
500+3.72 EUR
Mindestbestellmenge: 10
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BSP752R BSP752R.pdf
BSP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
29+2.55 EUR
43+1.67 EUR
46+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 19
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BTS441RG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C19A98E98469&compId=BTS441RG.pdf?ci_sign=e61366597abf2906cf65152ad268807663a7c035
BTS441RG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
18+4.00 EUR
19+3.79 EUR
Mindestbestellmenge: 14
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BTS5210L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106
BTS5210L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
On-state resistance: 0.11Ω
Output current: 1.8A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: BSOP12
Supply voltage: 5.5...40V DC
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.39 EUR
24+3.00 EUR
26+2.85 EUR
250+2.73 EUR
Mindestbestellmenge: 14
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BTS716GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF308CE2FAF3D1&compId=BTS716G.pdf?ci_sign=b81448f0354de497b5d1a10935734c50374a9d3c
BTS716GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Output current: 2.6...5.3A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Power dissipation: 3.6W
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.78 EUR
21+3.43 EUR
23+3.23 EUR
Mindestbestellmenge: 13
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BTS4175SGA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EA36E40F0469&compId=BTS4175SGA.pdf?ci_sign=b4727641779625566a455f41863bca8a403915c1
BTS4175SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFR5410TRPBF description irfr5410pbf.pdf
IRFR5410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1057 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
56+1.29 EUR
139+0.52 EUR
147+0.49 EUR
Mindestbestellmenge: 39
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BSP742R pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869764CDAC0A6469&compId=BSP742R.pdf?ci_sign=d73026d39c5d188555036d786d3243364a24976c
BSP742R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Mounting: SMD
Number of channels: 1
Case: SO8
On-state resistance: 0.25Ω
Kind of output: N-Channel
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
33+2.22 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 22
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BSP742RIXUMA1 Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t
BSP742RIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Produkt ist nicht verfügbar
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