Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148616) > Seite 2461 nach 2477
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IRF6715MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 180A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 78W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRF6775MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 28A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRF6785MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 57W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6795MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 160A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 75W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRF6811STRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 74A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 32W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6894MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 170A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 54W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRF6898MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 213A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 78W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRF7739L2TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRF7779L2TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 67A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRF7946TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Case: DirectFET Mounting: SMD Kind of channel: enhancement Power dissipation: 96W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6645TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 42W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6641TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.6A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7748L1TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 28A Case: DirectFET Mounting: SMD Kind of channel: enhancement On-state resistance: 1.7mΩ Power dissipation: 3.3W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AUIRF7665S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14.4A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 30W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
CY7C1470BV33-200BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
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CY7C1470BV33-167AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1470BV33-167BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BTS50080-1TEA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD Case: PG-TO252-5-11 Supply voltage: 5.5...30V DC On-state resistance: 16mΩ Output voltage: 39V Output current: 10A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Mounting: SMD |
auf Bestellung 2085 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS500251TEAAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 24A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-5-11 On-state resistance: 5mΩ Supply voltage: 5.8...18V DC Technology: High Current PROFET Operating temperature: -40...150°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPD053N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Drain-source voltage: -100V Drain current: -290mA On-state resistance: 2.2Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 |
auf Bestellung 1180 Stücke: Lieferzeit 14-21 Tag (e) |
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CY7C4041KV13-667FCXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FCBGA361 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 1.3V DC Frequency: 667MHz |
Produkt ist nicht verfügbar |
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IDP15E65D2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2 Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IDP15E65D1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BFR360FH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Power dissipation: 0.21W Case: TSFP-3 Kind of package: reel; tape Frequency: 14GHz Mounting: SMD Current gain: 90...160 Collector-emitter voltage: 6V Collector current: 35mA |
auf Bestellung 2972 Stücke: Lieferzeit 14-21 Tag (e) |
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S25FL128SAGNFV001 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP320N20N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3 Mounting: THT Drain-source voltage: 200V Drain current: 34A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO220-3 |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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S80KS2562GABHB023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2562GABHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2563GABHA020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2563GABHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2564GACHI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2564GACHI043 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2564GACHV040 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS2564GACHV043 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BSZ035N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ035N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ITS5215L | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Case: BSOP12 Mounting: SMD Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Technology: Industrial PROFET Kind of integrated circuit: high-side Supply voltage: 5.5...40V DC On-state resistance: 70mΩ Output current: 3.7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP027N08N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPP019N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W Type of transistor: N-MOSFET Technology: StrongIRFET™ 2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 147A Pulsed drain current: 764A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 124nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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S80KS5122GABHA020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS5122GABHB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS5122GABHM020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S80KS5122GABHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHA213 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHAC10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHAC13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHB210 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHB213 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
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S25FL512SAGBHBA10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
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S25FL512SAGBHBA13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
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S25FL512SAGBHI210 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
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S25FL512SAGBHI213 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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S25FL512SAGBHI310 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHI313 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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S25FL512SAGBHIA10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHIA13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHIC10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHIC13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL512SAGBHID10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
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Im Einkaufswagen Stück im Wert von UAH |
IRF6715MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF6775MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6785MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 57W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 57W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6795MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 75W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 75W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6811STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 32W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 32W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6894MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6898MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7739L2TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7779L2TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7946TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6645TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6641TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7748L1TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Power dissipation: 3.3W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Power dissipation: 3.3W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7665S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1470BV33-200BZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-167AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-167BZI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BTS50080-1TEA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.98 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
BTS500251TEAAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD053N06NATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
169+ | 0.42 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
1000+ | 0.25 EUR |
CY7C4041KV13-667FCXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
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IDP15E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
IDP15E65D1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
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BFR360FH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.21W
Case: TSFP-3
Kind of package: reel; tape
Frequency: 14GHz
Mounting: SMD
Current gain: 90...160
Collector-emitter voltage: 6V
Collector current: 35mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.21W
Case: TSFP-3
Kind of package: reel; tape
Frequency: 14GHz
Mounting: SMD
Current gain: 90...160
Collector-emitter voltage: 6V
Collector current: 35mA
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
232+ | 0.31 EUR |
336+ | 0.21 EUR |
391+ | 0.18 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
S25FL128SAGNFV001 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
45+ | 1.62 EUR |
50+ | 1.43 EUR |
IPP320N20N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.42 EUR |
19+ | 3.90 EUR |
22+ | 3.39 EUR |
23+ | 3.20 EUR |
S80KS2562GABHB023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2562GABHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2563GABHA020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
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S80KS2563GABHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
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S80KS2564GACHI040 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
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S80KS2564GACHI043 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
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S80KS2564GACHV040 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S80KS2564GACHV043 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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BSZ035N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSZ035N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
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ITS5215L |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Output current: 3.7A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Output current: 3.7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP027N08N5AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPP019N08NF2SAKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Pulsed drain current: 764A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 124nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Pulsed drain current: 764A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 124nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.90 EUR |
36+ | 1.99 EUR |
40+ | 1.83 EUR |
50+ | 1.80 EUR |
S80KS5122GABHA020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S80KS5122GABHB020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S80KS5122GABHM020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S80KS5122GABHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S25FL512SAGBHA213 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25FL512SAGBHAC10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25FL512SAGBHAC13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHB210 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25FL512SAGBHB213 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHBA10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHBA13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHI210 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHI213 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHI310 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHI313 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHIA10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHIA13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHIC10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHIC13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL512SAGBHID10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH