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AUIRF7343QTR AUIRF7343QTR INFINEON TECHNOLOGIES auirf7343q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7342TRPBF IRF7342TRPBF INFINEON TECHNOLOGIES irf7342pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4092 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
68+1.05 EUR
80+0.9 EUR
100+0.73 EUR
250+0.64 EUR
500+0.59 EUR
1000+0.55 EUR
2000+0.51 EUR
4000+0.48 EUR
Mindestbestellmenge: 47
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IGU04N60TAKMA1 IGU04N60TAKMA1 INFINEON TECHNOLOGIES IGU04N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Power dissipation: 42W
Case: TO251
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
auf Bestellung 36 Stücke:
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36+1.99 EUR
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IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES IKD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 317ns
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
69+1.05 EUR
104+0.69 EUR
500+0.54 EUR
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IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES IKP04N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
82+0.87 EUR
107+0.67 EUR
120+0.6 EUR
250+0.57 EUR
Mindestbestellmenge: 68
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3670 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
65+1.1 EUR
76+0.94 EUR
87+0.83 EUR
100+0.76 EUR
Mindestbestellmenge: 50
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BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. forward voltage: 0.95V
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 2765 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
94+0.76 EUR
108+0.67 EUR
155+0.46 EUR
181+0.4 EUR
250+0.33 EUR
500+0.29 EUR
Mindestbestellmenge: 79
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TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2528 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
82+0.88 EUR
115+0.62 EUR
1000+0.5 EUR
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IGB15N60TATMA1 IGB15N60TATMA1 INFINEON TECHNOLOGIES IGB15N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
39+1.86 EUR
43+1.69 EUR
55+1.3 EUR
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IGW75N60H3FKSA1 IGW75N60H3FKSA1 INFINEON TECHNOLOGIES IGW75N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
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IGW75N60TFKSA1 IGW75N60TFKSA1 INFINEON TECHNOLOGIES IGW75N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 140 Stücke:
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14+5.38 EUR
19+3.95 EUR
30+3.76 EUR
Mindestbestellmenge: 14
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IKA15N60TXKSA1 IKA15N60TXKSA1 INFINEON TECHNOLOGIES IKA15N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Turn-off time: 238ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector current: 23A
Turn-off time: 238ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.97 EUR
29+2.52 EUR
30+2.4 EUR
Mindestbestellmenge: 25
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 319ns
Technology: TRENCHSTOP™ RC
Turn-on time: 26ns
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
38+1.92 EUR
43+1.69 EUR
51+1.42 EUR
Mindestbestellmenge: 30
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IKD15N60RFATMA1 IKD15N60RFATMA1 INFINEON TECHNOLOGIES IKD15N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-off time: 177ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
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IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
52+1.39 EUR
69+1.04 EUR
100+0.99 EUR
Mindestbestellmenge: 32
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IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 85ns
Turn-off time: 332ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.75 EUR
14+5.42 EUR
Mindestbestellmenge: 11
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IRFR3806TRPBF IRFR3806TRPBF INFINEON TECHNOLOGIES irfr3806pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1848 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
67+1.07 EUR
90+0.8 EUR
102+0.71 EUR
250+0.61 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 52
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IRFU9024NPBF IRFU9024NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D50559BF1A6F5005056AB5A8F&compId=irfr9024n.pdf?ci_sign=e676952b8a6a14a6d0b9ff8eafc4cbd4f96826fd description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Power dissipation: 38W
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
123+0.58 EUR
133+0.54 EUR
145+0.49 EUR
155+0.46 EUR
375+0.42 EUR
525+0.41 EUR
Mindestbestellmenge: 103
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BAV199E6327HTSA1 BAV199E6327HTSA1 INFINEON TECHNOLOGIES BAV199E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BSS126H6327XTSA2 BSS126H6327XTSA2 INFINEON TECHNOLOGIES BSS126H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
auf Bestellung 2446 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
150+0.48 EUR
172+0.42 EUR
278+0.26 EUR
500+0.24 EUR
Mindestbestellmenge: 120
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ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE30FC061DBA259&compId=ICE3BR4765JG.pdf?ci_sign=95a7f62974d2cfe45acb074f63d500b1e43f11f2 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 1225 Stücke:
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42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.37 EUR
Mindestbestellmenge: 42
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ICE3PCS01G ICE3PCS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A1FC0F2E8259&compId=ICE3PCS01G.pdf?ci_sign=c391d469f96c741ae49b2f5803c8ebf735bcd417 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Frequency: 21...100kHz
Application: SMPS
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 90...270V
auf Bestellung 1379 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
28+2.65 EUR
100+2.1 EUR
250+1.87 EUR
500+1.72 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
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ICE3PCS02GXUMA1 ICE3PCS02GXUMA1 INFINEON TECHNOLOGIES infineon-ice3pcs02g-ds-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 ICE3PCS03GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A4F0D40C8259&compId=ICE3PCS03G.pdf?ci_sign=681fdf327e579491c7b3fdba419e20770ca4b24b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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IR2103STRPBF IR2103STRPBF INFINEON TECHNOLOGIES ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
auf Bestellung 2460 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
68+1.06 EUR
77+0.93 EUR
80+0.9 EUR
Mindestbestellmenge: 66
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IRFS3607TRLPBF IRFS3607TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C788DD8CBFF1A303005056AB0C4F&compId=irfs3607pbf.pdf?ci_sign=bd195fc092e1dd6bd534dd7e189505e734d16645 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF5801TRPBF IRF5801TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F65AA430653F1A303005056AB0C4F&compId=irf5801pbf.pdf?ci_sign=f7e5c67b927b2f01bfff7333591905e81fb2e857 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Drain current: 0.6A
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
162+0.44 EUR
182+0.39 EUR
261+0.27 EUR
305+0.23 EUR
345+0.21 EUR
Mindestbestellmenge: 143
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IRLZ44NPBF IRLZ44NPBF INFINEON TECHNOLOGIES irlz44n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
102+0.7 EUR
107+0.67 EUR
111+0.65 EUR
115+0.62 EUR
500+0.57 EUR
1000+0.55 EUR
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IRLZ44NSTRLPBF IRLZ44NSTRLPBF INFINEON TECHNOLOGIES irlz44nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLZ44ZSTRLPBF IRLZ44ZSTRLPBF INFINEON TECHNOLOGIES irlz44zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IGB30N60H3ATMA1 IGB30N60H3ATMA1 INFINEON TECHNOLOGIES IGB30N60H3-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
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IGB30N60TATMA1 IGB30N60TATMA1 INFINEON TECHNOLOGIES IGB30N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES IGW30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
34+2.12 EUR
42+1.72 EUR
44+1.64 EUR
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IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES IGW30N60TFKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
20+3.73 EUR
24+3.07 EUR
30+2.4 EUR
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES IKW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.53 EUR
27+2.7 EUR
28+2.56 EUR
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IKW30N60TFKSA1 IKW30N60TFKSA1 INFINEON TECHNOLOGIES IKW30N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 INFINEON TECHNOLOGIES AIKW30N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IR2302SPBF IR2302SPBF INFINEON TECHNOLOGIES IR2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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IR2302STRPBF IR2302STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 750ns
Produkt ist nicht verfügbar
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IR21064PBF IR21064PBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IR2106SPBF IR2106SPBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 77 Stücke:
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23+3.25 EUR
25+2.92 EUR
29+2.55 EUR
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IR2106STRPBF IR2106STRPBF INFINEON TECHNOLOGIES ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
57+1.26 EUR
Mindestbestellmenge: 55
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IR2102SPBF IR2102SPBF INFINEON TECHNOLOGIES ir2101_2102.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IR2102STRPBF IR2102STRPBF INFINEON TECHNOLOGIES IRSDS17613-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
auf Bestellung 1440 Stücke:
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44+1.63 EUR
50+1.43 EUR
60+1.2 EUR
Mindestbestellmenge: 44
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IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 16 Stücke:
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16+4.46 EUR
Mindestbestellmenge: 16
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IR2109PBF IR2109PBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
27+2.66 EUR
29+2.5 EUR
Mindestbestellmenge: 21
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IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 3718 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
65+1.12 EUR
71+1.02 EUR
Mindestbestellmenge: 55
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SPD08N50C3BTMA1 SPD08N50C3BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC055B0CF746143&compId=SPD08N50C3.pdf?ci_sign=b862188d80ca98611ca5bbb3552eb42de1934d70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR5305TRLPBF IRFR5305TRLPBF INFINEON TECHNOLOGIES irfr5305pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
Mindestbestellmenge: 40
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IRFR5305TRPBF IRFR5305TRPBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9161 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
73+0.99 EUR
84+0.86 EUR
103+0.7 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.47 EUR
4000+0.43 EUR
6000+0.41 EUR
Mindestbestellmenge: 46
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AUIRFR5305TR AUIRFR5305TR INFINEON TECHNOLOGIES auirfr5305.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR5305TRL INFINEON TECHNOLOGIES auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -110A
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A6995DAD3FBCA11C&compId=IPI040N06N3G-DTE.pdf?ci_sign=5d0fdb2ae18e41775c6c36dcfad7d25cc4ee6d30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
60+1.2 EUR
67+1.07 EUR
74+0.97 EUR
Mindestbestellmenge: 53
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IPP040N06N3GXKSA1 IPP040N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98C3F13C0811C&compId=IPP040N06N3G-DTE.pdf?ci_sign=dc43bbb37c068b8d637e5688c12841b44cf9c94a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
57+1.26 EUR
Mindestbestellmenge: 31
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BFR193WH6327XTSA1 BFR193WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D2E2BDFF411C&compId=BFR193WH6327-dte.pdf?ci_sign=d5d4bdb519ab3c0349eced101a0ebc15d034d71a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector current: 80mA
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
188+0.38 EUR
325+0.22 EUR
388+0.18 EUR
481+0.15 EUR
550+0.13 EUR
Mindestbestellmenge: 152
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IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES IPD040N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2623 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
82+0.88 EUR
120+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
2500+0.43 EUR
Mindestbestellmenge: 52
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 6A
Gate-emitter voltage: ±20V
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
52+1.39 EUR
69+1.04 EUR
81+0.89 EUR
95+0.76 EUR
Mindestbestellmenge: 48
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
70+1.03 EUR
101+0.71 EUR
Mindestbestellmenge: 45
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
49+1.49 EUR
64+1.13 EUR
100+1.07 EUR
Mindestbestellmenge: 36
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AUIRF7343QTR auirf7343q.pdf
AUIRF7343QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7342TRPBF irf7342pbf.pdf
IRF7342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4092 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
68+1.05 EUR
80+0.9 EUR
100+0.73 EUR
250+0.64 EUR
500+0.59 EUR
1000+0.55 EUR
2000+0.51 EUR
4000+0.48 EUR
Mindestbestellmenge: 47
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IGU04N60TAKMA1 IGU04N60T.pdf
IGU04N60TAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Power dissipation: 42W
Case: TO251
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
Mindestbestellmenge: 36
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IKD04N60RATMA1 IKD04N60R.pdf
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 317ns
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
69+1.05 EUR
104+0.69 EUR
500+0.54 EUR
Mindestbestellmenge: 44
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IKP04N60TXKSA1 IKP04N60T.pdf
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
82+0.87 EUR
107+0.67 EUR
120+0.6 EUR
250+0.57 EUR
Mindestbestellmenge: 68
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IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
65+1.1 EUR
76+0.94 EUR
87+0.83 EUR
100+0.76 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00
BAS12504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. forward voltage: 0.95V
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 2765 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
94+0.76 EUR
108+0.67 EUR
155+0.46 EUR
181+0.4 EUR
250+0.33 EUR
500+0.29 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 2528 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
82+0.88 EUR
115+0.62 EUR
1000+0.5 EUR
Mindestbestellmenge: 60
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IGB15N60TATMA1 IGB15N60T-DTE.pdf
IGB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
39+1.86 EUR
43+1.69 EUR
55+1.3 EUR
Mindestbestellmenge: 34
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IGW75N60H3FKSA1 IGW75N60H3-DTE.pdf
IGW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGW75N60TFKSA1 IGW75N60T-DTE.pdf
IGW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.38 EUR
19+3.95 EUR
30+3.76 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N60TXKSA1 IKA15N60T.pdf
IKA15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Turn-off time: 238ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector current: 23A
Turn-off time: 238ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
29+2.52 EUR
30+2.4 EUR
Mindestbestellmenge: 25
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IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 319ns
Technology: TRENCHSTOP™ RC
Turn-on time: 26ns
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
38+1.92 EUR
43+1.69 EUR
51+1.42 EUR
Mindestbestellmenge: 30
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IKD15N60RFATMA1 IKD15N60RF.pdf
IKD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-off time: 177ns
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
52+1.39 EUR
69+1.04 EUR
100+0.99 EUR
Mindestbestellmenge: 32
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IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 85ns
Turn-off time: 332ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.75 EUR
14+5.42 EUR
Mindestbestellmenge: 11
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IRFR3806TRPBF irfr3806pbf.pdf
IRFR3806TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
67+1.07 EUR
90+0.8 EUR
102+0.71 EUR
250+0.61 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRFU9024NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D50559BF1A6F5005056AB5A8F&compId=irfr9024n.pdf?ci_sign=e676952b8a6a14a6d0b9ff8eafc4cbd4f96826fd
IRFU9024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Power dissipation: 38W
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
123+0.58 EUR
133+0.54 EUR
145+0.49 EUR
155+0.46 EUR
375+0.42 EUR
525+0.41 EUR
Mindestbestellmenge: 103
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BAV199E6327HTSA1 BAV199E6327.pdf
BAV199E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BSS126H6327XTSA2 BSS126H6327XTSA2.pdf
BSS126H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
auf Bestellung 2446 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
150+0.48 EUR
172+0.42 EUR
278+0.26 EUR
500+0.24 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR4765JGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE30FC061DBA259&compId=ICE3BR4765JG.pdf?ci_sign=95a7f62974d2cfe45acb074f63d500b1e43f11f2
ICE3BR4765JGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 1225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.37 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A1FC0F2E8259&compId=ICE3PCS01G.pdf?ci_sign=c391d469f96c741ae49b2f5803c8ebf735bcd417
ICE3PCS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Frequency: 21...100kHz
Application: SMPS
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 90...270V
auf Bestellung 1379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
28+2.65 EUR
100+2.1 EUR
250+1.87 EUR
500+1.72 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
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ICE3PCS02GXUMA1 infineon-ice3pcs02g-ds-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b
ICE3PCS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A4F0D40C8259&compId=ICE3PCS03G.pdf?ci_sign=681fdf327e579491c7b3fdba419e20770ca4b24b
ICE3PCS03GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
auf Bestellung 2460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
68+1.06 EUR
77+0.93 EUR
80+0.9 EUR
Mindestbestellmenge: 66
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IRFS3607TRLPBF pVersion=0046&contRep=ZT&docId=E221C788DD8CBFF1A303005056AB0C4F&compId=irfs3607pbf.pdf?ci_sign=bd195fc092e1dd6bd534dd7e189505e734d16645
IRFS3607TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5801TRPBF pVersion=0046&contRep=ZT&docId=E21F65AA430653F1A303005056AB0C4F&compId=irf5801pbf.pdf?ci_sign=f7e5c67b927b2f01bfff7333591905e81fb2e857
IRF5801TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Drain current: 0.6A
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
162+0.44 EUR
182+0.39 EUR
261+0.27 EUR
305+0.23 EUR
345+0.21 EUR
Mindestbestellmenge: 143
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IRLZ44NPBF description irlz44n.pdf
IRLZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
102+0.7 EUR
107+0.67 EUR
111+0.65 EUR
115+0.62 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 54
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IRLZ44NSTRLPBF irlz44nspbf.pdf
IRLZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLZ44ZSTRLPBF irlz44zpbf.pdf
IRLZ44ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IGB30N60H3ATMA1 IGB30N60H3-DTE.pdf
IGB30N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGB30N60TATMA1 IGB30N60T.pdf
IGB30N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IGW30N60H3FKSA1 IGW30N60H3-DTE.pdf
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
34+2.12 EUR
42+1.72 EUR
44+1.64 EUR
Mindestbestellmenge: 26
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IGW30N60TFKSA1 IGW30N60TFKSA1-DTE.pdf
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.73 EUR
24+3.07 EUR
30+2.4 EUR
Mindestbestellmenge: 18
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IKW30N60H3FKSA1 IKW30N60H3.pdf
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 21
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IKW30N60TFKSA1 IKW30N60T.pdf
IKW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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AIKW30N60CTXKSA1 AIKW30N60CT.pdf
AIKW30N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IR2302SPBF IR2302SPBF.pdf
IR2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2302STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 750ns
Produkt ist nicht verfügbar
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IR21064PBF ir2106.pdf
IR21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2106SPBF ir2106.pdf
IR2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.92 EUR
29+2.55 EUR
Mindestbestellmenge: 23
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IR2106STRPBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
57+1.26 EUR
Mindestbestellmenge: 55
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IR2102SPBF description ir2101_2102.pdf
IR2102SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
50+1.43 EUR
60+1.2 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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IR2109PBF IR21094SPBF.pdf
IR2109PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
27+2.66 EUR
29+2.5 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 3718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
65+1.12 EUR
71+1.02 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
SPD08N50C3BTMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC055B0CF746143&compId=SPD08N50C3.pdf?ci_sign=b862188d80ca98611ca5bbb3552eb42de1934d70
SPD08N50C3BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR5305TRLPBF irfr5305pbf.pdf
IRFR5305TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5305TRPBF description irfr5305pbf.pdf
IRFR5305TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
73+0.99 EUR
84+0.86 EUR
103+0.7 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.47 EUR
4000+0.43 EUR
6000+0.41 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR5305TR auirfr5305.pdf
AUIRFR5305TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR5305TRL auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -110A
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI040N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A6995DAD3FBCA11C&compId=IPI040N06N3G-DTE.pdf?ci_sign=5d0fdb2ae18e41775c6c36dcfad7d25cc4ee6d30
IPI040N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
60+1.2 EUR
67+1.07 EUR
74+0.97 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IPP040N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98C3F13C0811C&compId=IPP040N06N3G-DTE.pdf?ci_sign=dc43bbb37c068b8d637e5688c12841b44cf9c94a
IPP040N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
57+1.26 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
BFR193WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D2E2BDFF411C&compId=BFR193WH6327-dte.pdf?ci_sign=d5d4bdb519ab3c0349eced101a0ebc15d034d71a
BFR193WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector current: 80mA
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
188+0.38 EUR
325+0.22 EUR
388+0.18 EUR
481+0.15 EUR
550+0.13 EUR
Mindestbestellmenge: 152
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IPD040N03LGATMA1 IPD040N03LG-DTE.pdf
IPD040N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2623 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
82+0.88 EUR
120+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
2500+0.43 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 6A
Gate-emitter voltage: ±20V
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
52+1.39 EUR
69+1.04 EUR
81+0.89 EUR
95+0.76 EUR
Mindestbestellmenge: 48
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IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
70+1.03 EUR
101+0.71 EUR
Mindestbestellmenge: 45
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IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.49 EUR
64+1.13 EUR
100+1.07 EUR
Mindestbestellmenge: 36
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