Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149582) > Seite 2460 nach 2494
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Mounting: SMD Case: SOT23 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: double series Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Mounting: SMD Case: SOT23 Max. off-state voltage: 150V Max. forward voltage: 1.2V Load current: 0.2A Semiconductor structure: double series Max. forward impulse current: 12A Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN |
auf Bestellung 1520 Stücke: Lieferzeit 14-21 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF |
auf Bestellung 1155 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Mounting: SMD Case: SOD323 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 2619 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 170MHz Kind of transistor: complementary pair |
auf Bestellung 7010 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Electrical mounting: SMT Features of semiconductor devices: Schottky Type of bridge rectifier: single-phase Case: SOT143 Max. off-state voltage: 30V Load current: 0.9A Max. forward impulse current: 5A Kind of package: reel; tape |
auf Bestellung 4579 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS4002ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT Case: SOT143 Max. off-state voltage: 40V Load current: 0.2A Max. forward impulse current: 2A Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: Schottky Type of bridge rectifier: single-phase |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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BB640E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 2.8...76pF |
auf Bestellung 2336 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBTA06UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 100MHz |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML9303TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 4174 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R360P7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1662 Stücke: Lieferzeit 14-21 Tag (e) |
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ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Mounting: SMD Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: phase-cut dimming; soft-start function Kind of integrated circuit: LED driver; PFC controller; SMPS controller Topology: flyback Case: PG-DSO-8 Operating voltage: 10.5...26V DC |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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IR1161LTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5 Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Topology: flyback; push-pull; resonant LLC Voltage class: 200V Operating temperature: -40...125°C Power: 590mW Supply voltage: 4.75...18V DC Output current: -2.5...1A Type of integrated circuit: driver Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR11688STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Topology: flyback; push-pull; resonant LLC Voltage class: 200V Operating temperature: -40...125°C Power: 625mW Supply voltage: 4.75...18V DC Output current: -4...1A Type of integrated circuit: driver Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR1169STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Topology: flyback; push-pull; resonant LLC Voltage class: 200V Operating temperature: -40...125°C Power: 625mW Supply voltage: 11...19V DC Output current: -4...1A Type of integrated circuit: driver Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE5QR1070AZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80% Power: 58/32W Input voltage: 80...265V Output current: 0.4A Case: DIP7 Mounting: THT Operating temperature: -40...150°C Breakdown voltage: 700V Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Duty cycle factor: 0...80% Kind of integrated circuit: PWM controller Topology: flyback Operating voltage: 10...25.5V DC Frequency: 20kHz |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP740H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: HBT; RF Collector-emitter voltage: 13V Collector current: 45mA Power dissipation: 0.16W Case: SOT343 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 44GHz Technology: SiGe:C |
auf Bestellung 2541 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50055-1TMB | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT Case: PG-TO220-7-11 Supply voltage: 5...34V DC On-state resistance: 4.4mΩ Output current: 55A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Mounting: THT |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50080-1TMB | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT Case: PG-TO220-7-12 Supply voltage: 5.5...38V DC On-state resistance: 7mΩ Output current: 9.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Mounting: THT |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR182WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323 Kind of package: reel; tape Collector-emitter voltage: 12V Collector current: 35mA Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: RF Mounting: SMD Case: SOT323 Frequency: 8GHz |
auf Bestellung 1437 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5616H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX53H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Mounting: SMD Frequency: 125MHz Power dissipation: 2W |
auf Bestellung 571 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX5610H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Mounting: SMD Frequency: 100MHz Collector-emitter voltage: 80V Collector current: 1A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Case: SOT89 |
auf Bestellung 1795 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX56H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF5802TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 0.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1773 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSL207SPH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6 Case: PG-TSOP-6 Mounting: SMD On-state resistance: 41mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -6A |
auf Bestellung 2861 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2132JPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Mounting: SMD Turn-on time: 675ns Turn-off time: 475ns Number of channels: 6 Kind of package: tube Topology: IGBT three-phase bridge; MOSFET three-phase bridge Operating temperature: -40...125°C Voltage class: 600V Power: 2W Supply voltage: 10...20V DC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2135JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Mounting: SMD Turn-on time: 750ns Turn-off time: 700ns Number of channels: 6 Kind of package: tube Topology: IGBT three-phase bridge; MOSFET three-phase bridge Operating temperature: -40...125°C Voltage class: 0.6/1.2kV Power: 2W Supply voltage: 10...20V DC |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2233JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Mounting: SMD Turn-on time: 750ns Turn-off time: 700ns Number of channels: 6 Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Kind of package: tube Topology: IGBT three-phase bridge; MOSFET three-phase bridge Operating temperature: -40...125°C Voltage class: 1.2kV Power: 2W Supply voltage: 10...20V DC |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF100B201 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL4310TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFB7434PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 317A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 216nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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TLF50201EL | INFINEON TECHNOLOGIES |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLF50251EL | INFINEON TECHNOLOGIES |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2181SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: undervoltage UVP |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW20N60S5 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: THT Kind of channel: enhancement Gate charge: 16.7nC Features of semiconductor devices: logic level Kind of package: tube |
auf Bestellung 1262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 21A Pulsed drain current: 110A Power dissipation: 68W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFP3006PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3415PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3703PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Drain-source voltage: 240V Drain current: 50mA On-state resistance: 6.5Ω Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Power dissipation: 1.8W Case: SOT223 |
auf Bestellung 1719 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Case: SOT223 Mounting: SMD Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2304SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 185ns Power: 625mW |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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BB535E7904HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 2...20pF |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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BB639E7904HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 2.4...40pF |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 0.45...7.2pF |
auf Bestellung 1055 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Mounting: SMD Case: SC79 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 2855 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Mounting: SMD Power dissipation: 66W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TDSON-8 Drain-source voltage: 80V Drain current: 55A On-state resistance: 12.3mΩ Type of transistor: N-MOSFET |
auf Bestellung 1398 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Mounting: SMD Power dissipation: 60W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TDSON-8 Drain-source voltage: 100V Drain current: 42A On-state resistance: 16mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 150V Drain current: 50A On-state resistance: 19mΩ Type of transistor: N-MOSFET |
auf Bestellung 1751 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Case: SC79 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 2285 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Mounting: SMD Case: SOT323 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: common cathode; double Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 1115 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF250P225 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W Type of transistor: N-MOSFET Power dissipation: 313W Polarisation: unipolar Case: TO247AC Kind of package: tube Mounting: THT Gate charge: 96nC Technology: StrongIRFET™ Kind of channel: enhancement Drain-source voltage: 250V Gate-source voltage: ±20V Drain current: 49A On-state resistance: 22mΩ |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 45A On-state resistance: 16.5mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSB015N04NX3GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB015N04NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BAR6404E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
296+ | 0.24 EUR |
384+ | 0.19 EUR |
573+ | 0.12 EUR |
884+ | 0.08 EUR |
933+ | 0.08 EUR |
1000+ | 0.07 EUR |
BAR66E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.2V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 12A
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.2V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 12A
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
252+ | 0.28 EUR |
353+ | 0.20 EUR |
414+ | 0.17 EUR |
439+ | 0.16 EUR |
BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 1155 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
405+ | 0.18 EUR |
460+ | 0.16 EUR |
500+ | 0.14 EUR |
BAR6303WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
311+ | 0.23 EUR |
412+ | 0.17 EUR |
635+ | 0.11 EUR |
827+ | 0.09 EUR |
910+ | 0.08 EUR |
BC817UPNE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7010 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
215+ | 0.33 EUR |
275+ | 0.26 EUR |
404+ | 0.18 EUR |
428+ | 0.17 EUR |
BAS3007ARPPE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Case: SOT143
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Case: SOT143
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Kind of package: reel; tape
auf Bestellung 4579 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
156+ | 0.46 EUR |
182+ | 0.39 EUR |
240+ | 0.30 EUR |
254+ | 0.28 EUR |
1000+ | 0.27 EUR |
BAS4002ARPPE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
166+ | 0.43 EUR |
239+ | 0.30 EUR |
252+ | 0.28 EUR |
500+ | 0.27 EUR |
BB640E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.8...76pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.8...76pF
auf Bestellung 2336 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
252+ | 0.28 EUR |
385+ | 0.19 EUR |
407+ | 0.18 EUR |
695+ | 0.10 EUR |
736+ | 0.10 EUR |
SMBTA06UPNE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
239+ | 0.30 EUR |
371+ | 0.19 EUR |
511+ | 0.14 EUR |
544+ | 0.13 EUR |
IRLML9303TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4174 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
315+ | 0.23 EUR |
451+ | 0.16 EUR |
511+ | 0.14 EUR |
758+ | 0.09 EUR |
807+ | 0.09 EUR |
3000+ | 0.09 EUR |
IPD70R360P7SAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1662 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
81+ | 0.88 EUR |
93+ | 0.78 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
ICL8001GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: phase-cut dimming; soft-start function
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Topology: flyback
Case: PG-DSO-8
Operating voltage: 10.5...26V DC
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: phase-cut dimming; soft-start function
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Topology: flyback
Case: PG-DSO-8
Operating voltage: 10.5...26V DC
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
51+ | 1.42 EUR |
58+ | 1.24 EUR |
64+ | 1.13 EUR |
67+ | 1.07 EUR |
100+ | 1.04 EUR |
IR1161LTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 590mW
Supply voltage: 4.75...18V DC
Output current: -2.5...1A
Type of integrated circuit: driver
Application: SMPS
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 590mW
Supply voltage: 4.75...18V DC
Output current: -2.5...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR11688STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 4.75...18V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 4.75...18V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR1169STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11...19V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11...19V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE5QR1070AZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Power: 58/32W
Input voltage: 80...265V
Output current: 0.4A
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Breakdown voltage: 700V
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Power: 58/32W
Input voltage: 80...265V
Output current: 0.4A
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Breakdown voltage: 700V
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Operating voltage: 10...25.5V DC
Frequency: 20kHz
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.97 EUR |
BFP740H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 45mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 44GHz
Technology: SiGe:C
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 45mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 44GHz
Technology: SiGe:C
auf Bestellung 2541 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
198+ | 0.36 EUR |
221+ | 0.32 EUR |
231+ | 0.31 EUR |
249+ | 0.29 EUR |
500+ | 0.28 EUR |
BTS50055-1TMB |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-11
Supply voltage: 5...34V DC
On-state resistance: 4.4mΩ
Output current: 55A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-11
Supply voltage: 5...34V DC
On-state resistance: 4.4mΩ
Output current: 55A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 10.14 EUR |
13+ | 5.51 EUR |
14+ | 5.21 EUR |
BTS50080-1TMB |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.89 EUR |
13+ | 5.65 EUR |
14+ | 5.33 EUR |
BFR182WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
auf Bestellung 1437 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
562+ | 0.13 EUR |
642+ | 0.11 EUR |
705+ | 0.10 EUR |
758+ | 0.09 EUR |
834+ | 0.09 EUR |
878+ | 0.08 EUR |
BCP5616H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
245+ | 0.29 EUR |
320+ | 0.23 EUR |
335+ | 0.21 EUR |
BCX53H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Mounting: SMD
Frequency: 125MHz
Power dissipation: 2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Mounting: SMD
Frequency: 125MHz
Power dissipation: 2W
auf Bestellung 571 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
248+ | 0.29 EUR |
285+ | 0.25 EUR |
362+ | 0.20 EUR |
383+ | 0.19 EUR |
BCX5610H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Mounting: SMD
Frequency: 100MHz
Collector-emitter voltage: 80V
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Mounting: SMD
Frequency: 100MHz
Collector-emitter voltage: 80V
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Case: SOT89
auf Bestellung 1795 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
250+ | 0.29 EUR |
325+ | 0.22 EUR |
345+ | 0.21 EUR |
BCX56H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF5802TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1773 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
170+ | 0.42 EUR |
317+ | 0.23 EUR |
336+ | 0.21 EUR |
IRLMS2002TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSL207SPH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 41mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 41mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -6A
auf Bestellung 2861 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
108+ | 0.67 EUR |
216+ | 0.33 EUR |
229+ | 0.31 EUR |
IR2132JPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 675ns
Turn-off time: 475ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 600V
Power: 2W
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 675ns
Turn-off time: 475ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 600V
Power: 2W
Supply voltage: 10...20V DC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
IR2135JPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 750ns
Turn-off time: 700ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Power: 2W
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 750ns
Turn-off time: 700ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Power: 2W
Supply voltage: 10...20V DC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.22 EUR |
7+ | 10.80 EUR |
IR2233JPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 750ns
Turn-off time: 700ns
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 1.2kV
Power: 2W
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 750ns
Turn-off time: 700ns
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 1.2kV
Power: 2W
Supply voltage: 10...20V DC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.67 EUR |
7+ | 10.30 EUR |
8+ | 9.74 EUR |
IRF100B201 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.18 EUR |
31+ | 2.33 EUR |
33+ | 2.20 EUR |
IRFL4310TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7434PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.35 EUR |
29+ | 2.49 EUR |
45+ | 1.62 EUR |
47+ | 1.53 EUR |
TLF50201EL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLF50251EL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
IR2181SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.93 EUR |
21+ | 3.50 EUR |
22+ | 3.32 EUR |
SPW20N60S5 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.74 EUR |
12+ | 6.03 EUR |
13+ | 5.71 EUR |
IRLZ34NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.7nC
Features of semiconductor devices: logic level
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.7nC
Features of semiconductor devices: logic level
Kind of package: tube
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
73+ | 0.99 EUR |
162+ | 0.44 EUR |
171+ | 0.42 EUR |
IRLZ34NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP3006PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
18+ | 3.99 EUR |
19+ | 3.78 EUR |
IRFP3415PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.40 EUR |
IRFP3703PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
BSP129H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
94+ | 0.77 EUR |
147+ | 0.49 EUR |
155+ | 0.46 EUR |
250+ | 0.45 EUR |
500+ | 0.44 EUR |
BSP129H6906XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
IRS2304SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Power: 625mW
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
35+ | 2.10 EUR |
45+ | 1.62 EUR |
46+ | 1.57 EUR |
BB535E7904HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2...20pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2...20pF
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
295+ | 0.24 EUR |
382+ | 0.19 EUR |
420+ | 0.17 EUR |
BB639E7904HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
170+ | 0.41 EUR |
BB85702VH7902XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
auf Bestellung 1055 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
192+ | 0.37 EUR |
360+ | 0.20 EUR |
382+ | 0.19 EUR |
BAR6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
271+ | 0.26 EUR |
339+ | 0.21 EUR |
543+ | 0.13 EUR |
1011+ | 0.07 EUR |
1069+ | 0.07 EUR |
BSC123N08NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 55A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 55A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
auf Bestellung 1398 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.70 EUR |
60+ | 1.20 EUR |
86+ | 0.84 EUR |
91+ | 0.79 EUR |
500+ | 0.76 EUR |
BSC160N10NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
Power dissipation: 60W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
Power dissipation: 60W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC190N15NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 50A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 50A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 1751 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.00 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
275+ | 0.26 EUR |
455+ | 0.16 EUR |
500+ | 0.14 EUR |
625+ | 0.11 EUR |
BAR6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Mounting: SMD
Case: SOT323
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: common cathode; double
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Mounting: SMD
Case: SOT323
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: common cathode; double
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
298+ | 0.24 EUR |
435+ | 0.16 EUR |
582+ | 0.12 EUR |
1000+ | 0.11 EUR |
IRF250P225 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 96nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 49A
On-state resistance: 22mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 96nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 49A
On-state resistance: 22mΩ
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.74 EUR |
12+ | 6.15 EUR |
13+ | 5.81 EUR |
IRFZ46NLPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.40 EUR |
IRFZ46NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.66 EUR |
62+ | 1.17 EUR |
114+ | 0.63 EUR |
121+ | 0.59 EUR |
BSB165N15NZ3GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSB015N04NX3GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB015N04NGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH