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ICE3AR0680JZXKLA1
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 		ICE3AR0680JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC197E0F7F093D7&compId=ICE3AR0680JZ.pdf?ci_sign=e5a5a2a41e0d97336de868e16e9987b775cba6af Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 20A
auf Bestellung 9 Stücke:
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9+7.95 EUR
Mindestbestellmenge: 9
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SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPB11N60C3ATMA1 INFINEON TECHNOLOGIES SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
39+1.86 EUR
50+1.43 EUR
66+1.09 EUR
100+1.06 EUR
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SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
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10+7.36 EUR
Mindestbestellmenge: 10
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IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C07DF1A6F5005056AB5A8F&compId=irfp4468pbf.pdf?ci_sign=eef523c294153480bee6f3f39501fda4f4a75d12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Gate charge: 360nC
Technology: HEXFET®
Power dissipation: 520W
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.4 EUR
25+3.63 EUR
100+3.35 EUR
125+3.3 EUR
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IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B736F1A6F5005056AB5A8F&compId=irfb4227pbf.pdf?ci_sign=73cadd42ded945992e2faf41c326daefc593b46d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
auf Bestellung 237 Stücke:
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38+1.92 EUR
43+1.67 EUR
50+1.59 EUR
100+1.5 EUR
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IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES IRLML6402TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
253+0.28 EUR
368+0.19 EUR
432+0.17 EUR
Mindestbestellmenge: 173
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BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A580DBC045911820&compId=BSC100N06LS3G.pdf?ci_sign=5cfb9f41c9a01975b454eaf48ab23f5e8f178473 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2591 Stücke:
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53+1.36 EUR
76+0.94 EUR
87+0.83 EUR
106+0.68 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.5 EUR
2000+0.46 EUR
2500+0.44 EUR
Mindestbestellmenge: 53
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IRFP90N20DPBF IRFP90N20DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A7F1A6F5005056AB5A8F&compId=irfp90n20d.pdf?ci_sign=35d758d28b064f4d87903f236acbfb7653d7433c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.62 EUR
18+4.15 EUR
25+3.88 EUR
100+3.49 EUR
125+3.42 EUR
Mindestbestellmenge: 11
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IRF7416TRPBF IRF7416TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2B1BB2E2AF1A303005056AB0C4F&compId=irf7416qpbf.pdf?ci_sign=48a07bb72ed8a46a228df4b109fde42c036d74c8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4181 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
90+0.8 EUR
102+0.7 EUR
122+0.59 EUR
250+0.52 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.41 EUR
4000+0.38 EUR
Mindestbestellmenge: 56
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IRF5210PBF IRF5210PBF INFINEON TECHNOLOGIES irf5210.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1737 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
38+1.89 EUR
42+1.72 EUR
50+1.57 EUR
100+1.46 EUR
500+1.2 EUR
1000+1.12 EUR
1250+1.09 EUR
Mindestbestellmenge: 31
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IRF5210STRLPBF IRF5210STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.72 EUR
26+2.77 EUR
31+2.33 EUR
100+1.94 EUR
Mindestbestellmenge: 20
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IRF5210STRRPBF IRF5210STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS140WE6327HTSA1 BAS140WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF27ED36718469&compId=BAS140WE6327HTSA1.pdf?ci_sign=b32bb421919227b430b9bf5b53efb00a9a0502fa Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
auf Bestellung 4784 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
285+0.25 EUR
466+0.15 EUR
1137+0.063 EUR
1202+0.059 EUR
Mindestbestellmenge: 186
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...24V DC
Application: SMPS
Breakdown voltage: 650V
Input voltage: 85...265V
Topology: flyback
auf Bestellung 2118 Stücke:
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27+2.75 EUR
32+2.27 EUR
35+2.06 EUR
Mindestbestellmenge: 27
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IRF7389TRPBF IRF7389TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A176919833F1A303005056AB0C4F&compId=irf7389pbf.pdf?ci_sign=33486cc5a79142c2d9ae938ef43a9f134b5aef0b description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B48F1A6F5005056AB5A8F&compId=irfi3205.pdf?ci_sign=52d8c371c50b82fd99e00416e1acfb35fbd9f833 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
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23+3.25 EUR
24+2.97 EUR
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES IR4427PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
37+1.96 EUR
40+1.82 EUR
50+1.79 EUR
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IR4427STRPBF IR4427STRPBF INFINEON TECHNOLOGIES IR4427PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 2436 Stücke:
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45+1.6 EUR
54+1.34 EUR
Mindestbestellmenge: 45
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IRFB4310PBF IRFB4310PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A45F1A6F5005056AB5A8F&compId=irfs4310.pdf?ci_sign=5f019cb77481638d1fb392219f3c0e042cb82bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Gate charge: 170nC
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
32+2.26 EUR
38+1.93 EUR
50+1.57 EUR
100+1.54 EUR
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IRFB4310ZPBF IRFB4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A4CF1A6F5005056AB5A8F&compId=irfb4310zpbf.pdf?ci_sign=3b66071c2947244729f80c74ae0a1ee1680ad33d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Gate-source voltage: ±20V
Gate charge: 0.12µC
Technology: HEXFET®
Power dissipation: 250W
auf Bestellung 40 Stücke:
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24+2.99 EUR
33+2.17 EUR
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IRLR2905TRPBF INFINEON TECHNOLOGIES irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 160A
Drain current: 30A
Gate charge: 48nC
On-state resistance: 27mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Polarisation: unipolar
auf Bestellung 2105 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
58+1.25 EUR
66+1.08 EUR
80+0.9 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.51 EUR
Mindestbestellmenge: 40
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BAR81WH6327XTSA1 BAR81WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A26A2DA3067820&compId=BAR81.pdf?ci_sign=34e0f73e30b0ee29a7b8a6b9fc44f6096ce0a755 Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
177+0.41 EUR
199+0.36 EUR
222+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 69
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BAS28WH6327XTSA1 BAS28WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 1.25V
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Reverse recovery time: 4ns
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
Mindestbestellmenge: 125
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BC847CWH6327XTSA1 BC847CWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4972 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
309+0.23 EUR
539+0.13 EUR
687+0.1 EUR
827+0.087 EUR
1000+0.072 EUR
2500+0.056 EUR
3000+0.053 EUR
Mindestbestellmenge: 228
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BC849CWH6327XTSA1 BC849CWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
1017+0.07 EUR
Mindestbestellmenge: 1000
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BC858CWH6327 BC858CWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 30V
Frequency: 250MHz
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
2193+0.033 EUR
2778+0.026 EUR
2959+0.024 EUR
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BC860CWH6327 BC860CWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C7A678BAC469&compId=BC860CWH6327.pdf?ci_sign=089acfec796841105af32fdb8af9d00879956a20 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
795+0.09 EUR
1075+0.067 EUR
1215+0.059 EUR
1355+0.053 EUR
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BCR108WH6327 BCR108WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Kind of transistor: BRT
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
405+0.18 EUR
455+0.16 EUR
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BCR116WH6327 BCR116WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
450+0.16 EUR
920+0.078 EUR
1020+0.07 EUR
1155+0.062 EUR
Mindestbestellmenge: 450
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BCR129WH6327 BCR129WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Kind of transistor: BRT
auf Bestellung 13 Stücke:
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ICE2A180ZXKLA1
+1
 		ICE2A180ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6564F9B8095EA&compId=ICE2A265.pdf?ci_sign=b24b004e9b31a188c10f6a1d3585527c36658a70 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39D498D700259&compId=ICE2QS02G.pdf?ci_sign=e4bd689e7d7905ed242b81dfcdc4240d74f0894e Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
65+1.1 EUR
74+0.97 EUR
76+0.94 EUR
Mindestbestellmenge: 50
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ICE3BR0665JXKLA1 ICE3BR0665JXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492A96FF2A258BF&compId=ICE3BR0665J.pdf?ci_sign=2485ba497152d65b19cbd6488c3afc8c6cbd4e28 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.8A
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 56 Stücke:
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28+2.57 EUR
32+2.26 EUR
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ICE3BR1765JXKLA1 ICE3BR1765JXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492B90DB14E18BF&compId=ICE3BR1765J.pdf?ci_sign=b06ecb24355917be2440a416b519d692a3668673 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 1.5A
auf Bestellung 100 Stücke:
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39+1.86 EUR
Mindestbestellmenge: 39
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ICE3RBR0665JZXKLA1
+1
 		ICE3RBR0665JZXKLA1 INFINEON TECHNOLOGIES INFNS27653-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR1765JZXKLA1
+1
 		ICE3RBR1765JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE9949306FB11E998BF&compId=ICE3RBR1765JZ.pdf?ci_sign=51e37586229cebaa7e3a4060c0ad23c8a6fdf5ec Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR4765JZXKLA1
+1
 		ICE3RBR4765JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492F6789822D8BF&compId=ICE3RBR4765JZ.pdf?ci_sign=ede773950aa5318fcee8c2f31f82a013a22b1219 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Operating temperature: -40...130°C
Case: DIP7
Topology: flyback
Mounting: THT
Application: SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Duty cycle factor: 0...75%
Number of channels: 1
Operating voltage: 10.5...25V DC
Power: 26/18W
Input voltage: 85...265V
Breakdown voltage: 650V
Frequency: 65kHz
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSC0906NSATMA1 BSC0906NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875B1D58D0211C&compId=BSC0906NS-DTE.pdf?ci_sign=86654d924452c6631898cc76a12dd5eb308b8719 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
120+0.6 EUR
156+0.46 EUR
174+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
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IRFB3077PBF IRFB3077PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6B1F1A6F5005056AB5A8F&compId=irfb3077pbf.pdf?ci_sign=eb560ed04d0f30ce819df2a516ae68749dafec84 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 370W
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
41+1.77 EUR
50+1.72 EUR
Mindestbestellmenge: 25
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BGA524N6E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84AD79882F6640D2&compId=BGA524N6.pdf?ci_sign=71cefdfaa396b54cd6f68001cfc818fd4743cc12 Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Case: TSNP6
Mounting: SMT
Kind of package: reel; tape
Bandwidth: 1550...1615MHz
Application: global navigation satellite systems (GPS)
Integrated circuit features: low noise
Type of integrated circuit: RF amplifier
Operating temperature: -40...85°C
Noise Figure: 0.55dB
Number of channels: 1
Operating voltage: 1.5...3.3V
Produkt ist nicht verfügbar
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BTS640S2G BTS640S2G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CD6C94488469&compId=BTS640S2G.pdf?ci_sign=6ab6339076f7ce3792ac6be94012d605c8ecfe8b Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Case: TO263-7
On-state resistance: 27mΩ
Mounting: SMD
Output current: 11.4A
Number of channels: 1
Supply voltage: 5...34V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Kind of output: N-Channel
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.21 EUR
14+5.31 EUR
100+4.29 EUR
Mindestbestellmenge: 10
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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
Mindestbestellmenge: 23
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BAS2103WE6327HTSA1 BAS2103WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW
Reverse recovery time: 50ns
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Features of semiconductor devices: ultrafast switching
auf Bestellung 7890 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
397+0.18 EUR
455+0.16 EUR
645+0.11 EUR
751+0.095 EUR
1038+0.069 EUR
1169+0.061 EUR
3000+0.058 EUR
Mindestbestellmenge: 334
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
355+0.2 EUR
395+0.18 EUR
450+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 355
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IRF630NPBF IRF630NPBF INFINEON TECHNOLOGIES irf630n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
116+0.62 EUR
132+0.54 EUR
141+0.51 EUR
149+0.48 EUR
Mindestbestellmenge: 65
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IRF630NSTRLPBF IRF630NSTRLPBF INFINEON TECHNOLOGIES irf630npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.75 EUR
Mindestbestellmenge: 26
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SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
21+3.49 EUR
Mindestbestellmenge: 17
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
13+5.51 EUR
25+4.95 EUR
100+4.69 EUR
Mindestbestellmenge: 12
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
35+2.09 EUR
50+1.84 EUR
100+1.66 EUR
Mindestbestellmenge: 31
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.4 EUR
18+4.02 EUR
21+3.42 EUR
30+3.13 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 506 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
73+0.99 EUR
99+0.72 EUR
112+0.64 EUR
200+0.57 EUR
250+0.55 EUR
500+0.5 EUR
Mindestbestellmenge: 48
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IRF9540NLPBF IRF9540NLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
32+2.29 EUR
50+1.96 EUR
100+1.83 EUR
Mindestbestellmenge: 26
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IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES irf9540n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Kind of package: tube
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF12A53ADB7F5EA&compId=IRLR7843TRPBF.pdf?ci_sign=811800f91ae3ae22ef949fd280234228e68a7137 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
Mindestbestellmenge: 90
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IRFP1405PBF IRFP1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B2A151B7CBBF4A15&compId=irfp1405pbf.pdf?ci_sign=dc842e80b63cc194f40a38909618016841365ed4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Kind of channel: enhancement
Case: TO247AC
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 110A
Technology: HEXFET®
Power dissipation: 310W
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
26+2.79 EUR
Mindestbestellmenge: 23
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IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAA3F1A6F5005056AB5A8F&compId=irfp140n.pdf?ci_sign=fcc855513258caba7b984ad9c289a988f08e4045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
46+1.59 EUR
50+1.46 EUR
53+1.37 EUR
100+1.29 EUR
Mindestbestellmenge: 32
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ICE3AR0680JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC197E0F7F093D7&compId=ICE3AR0680JZ.pdf?ci_sign=e5a5a2a41e0d97336de868e16e9987b775cba6af
ICE3AR0680JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 20A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
39+1.86 EUR
50+1.43 EUR
66+1.09 EUR
100+1.06 EUR
Mindestbestellmenge: 32
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SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.36 EUR
Mindestbestellmenge: 10
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IRFP4468PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C07DF1A6F5005056AB5A8F&compId=irfp4468pbf.pdf?ci_sign=eef523c294153480bee6f3f39501fda4f4a75d12
IRFP4468PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Gate charge: 360nC
Technology: HEXFET®
Power dissipation: 520W
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
25+3.63 EUR
100+3.35 EUR
125+3.3 EUR
Mindestbestellmenge: 8
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IRFB4227PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B736F1A6F5005056AB5A8F&compId=irfb4227pbf.pdf?ci_sign=73cadd42ded945992e2faf41c326daefc593b46d
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
43+1.67 EUR
50+1.59 EUR
100+1.5 EUR
Mindestbestellmenge: 38
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IRLML6402TRPBF IRLML6402TRPBF.pdf
IRLML6402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
253+0.28 EUR
368+0.19 EUR
432+0.17 EUR
Mindestbestellmenge: 173
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BSC100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A580DBC045911820&compId=BSC100N06LS3G.pdf?ci_sign=5cfb9f41c9a01975b454eaf48ab23f5e8f178473
BSC100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2591 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
76+0.94 EUR
87+0.83 EUR
106+0.68 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.5 EUR
2000+0.46 EUR
2500+0.44 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRFP90N20DPBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A7F1A6F5005056AB5A8F&compId=irfp90n20d.pdf?ci_sign=35d758d28b064f4d87903f236acbfb7653d7433c
IRFP90N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.62 EUR
18+4.15 EUR
25+3.88 EUR
100+3.49 EUR
125+3.42 EUR
Mindestbestellmenge: 11
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IRF7416TRPBF pVersion=0046&contRep=ZT&docId=E221A2B1BB2E2AF1A303005056AB0C4F&compId=irf7416qpbf.pdf?ci_sign=48a07bb72ed8a46a228df4b109fde42c036d74c8
IRF7416TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
90+0.8 EUR
102+0.7 EUR
122+0.59 EUR
250+0.52 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.41 EUR
4000+0.38 EUR
Mindestbestellmenge: 56
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IRF5210PBF irf5210.pdf
IRF5210PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1737 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
38+1.89 EUR
42+1.72 EUR
50+1.57 EUR
100+1.46 EUR
500+1.2 EUR
1000+1.12 EUR
1250+1.09 EUR
Mindestbestellmenge: 31
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IRF5210STRLPBF pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0
IRF5210STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.72 EUR
26+2.77 EUR
31+2.33 EUR
100+1.94 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRRPBF pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0
IRF5210STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS140WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF27ED36718469&compId=BAS140WE6327HTSA1.pdf?ci_sign=b32bb421919227b430b9bf5b53efb00a9a0502fa
BAS140WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
auf Bestellung 4784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
285+0.25 EUR
466+0.15 EUR
1137+0.063 EUR
1202+0.059 EUR
Mindestbestellmenge: 186
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ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665XKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...24V DC
Application: SMPS
Breakdown voltage: 650V
Input voltage: 85...265V
Topology: flyback
auf Bestellung 2118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.75 EUR
32+2.27 EUR
35+2.06 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF description pVersion=0046&contRep=ZT&docId=E221A176919833F1A303005056AB0C4F&compId=irf7389pbf.pdf?ci_sign=33486cc5a79142c2d9ae938ef43a9f134b5aef0b
IRF7389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI3205PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284B48F1A6F5005056AB5A8F&compId=irfi3205.pdf?ci_sign=52d8c371c50b82fd99e00416e1acfb35fbd9f833
IRFI3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
24+2.97 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description IR4427PBF.pdf
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
37+1.96 EUR
40+1.82 EUR
50+1.79 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF IR4427PBF.pdf
IR4427STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 2436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
54+1.34 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A45F1A6F5005056AB5A8F&compId=irfs4310.pdf?ci_sign=5f019cb77481638d1fb392219f3c0e042cb82bb2
IRFB4310PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Gate charge: 170nC
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
32+2.26 EUR
38+1.93 EUR
50+1.57 EUR
100+1.54 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A4CF1A6F5005056AB5A8F&compId=irfb4310zpbf.pdf?ci_sign=3b66071c2947244729f80c74ae0a1ee1680ad33d
IRFB4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Gate-source voltage: ±20V
Gate charge: 0.12µC
Technology: HEXFET®
Power dissipation: 250W
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
33+2.17 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2905TRPBF description irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 160A
Drain current: 30A
Gate charge: 48nC
On-state resistance: 27mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Polarisation: unipolar
auf Bestellung 2105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
58+1.25 EUR
66+1.08 EUR
80+0.9 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.51 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BAR81WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A26A2DA3067820&compId=BAR81.pdf?ci_sign=34e0f73e30b0ee29a7b8a6b9fc44f6096ce0a755
BAR81WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
177+0.41 EUR
199+0.36 EUR
222+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
BAS28WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501
BAS28WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT343; Ufmax: 1.25V; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 1.25V
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Reverse recovery time: 4ns
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BC847CWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
309+0.23 EUR
539+0.13 EUR
687+0.1 EUR
827+0.087 EUR
1000+0.072 EUR
2500+0.056 EUR
3000+0.053 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BC849CWH6327XTSA1 bc847_8_9_bc850.pdf
BC849CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1017+0.07 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BC858CWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 30V
Frequency: 250MHz
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2193+0.033 EUR
2778+0.026 EUR
2959+0.024 EUR
Mindestbestellmenge: 2193
Im Einkaufswagen  Stück im Wert von  UAH
BC860CWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C7A678BAC469&compId=BC860CWH6327.pdf?ci_sign=089acfec796841105af32fdb8af9d00879956a20
BC860CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
795+0.09 EUR
1075+0.067 EUR
1215+0.059 EUR
1355+0.053 EUR
Mindestbestellmenge: 795
Im Einkaufswagen  Stück im Wert von  UAH
BCR108WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Kind of transistor: BRT
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
405+0.18 EUR
455+0.16 EUR
Mindestbestellmenge: 405
Im Einkaufswagen  Stück im Wert von  UAH
BCR116WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35
BCR116WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
450+0.16 EUR
920+0.078 EUR
1020+0.07 EUR
1155+0.062 EUR
Mindestbestellmenge: 450
Im Einkaufswagen  Stück im Wert von  UAH
BCR129WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Kind of transistor: BRT
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ICE2A180ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6564F9B8095EA&compId=ICE2A265.pdf?ci_sign=b24b004e9b31a188c10f6a1d3585527c36658a70
ICE2A180ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QS02GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39D498D700259&compId=ICE2QS02G.pdf?ci_sign=e4bd689e7d7905ed242b81dfcdc4240d74f0894e
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
65+1.1 EUR
74+0.97 EUR
76+0.94 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR0665JXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492A96FF2A258BF&compId=ICE3BR0665J.pdf?ci_sign=2485ba497152d65b19cbd6488c3afc8c6cbd4e28
ICE3BR0665JXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.8A
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
32+2.26 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR1765JXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492B90DB14E18BF&compId=ICE3BR1765J.pdf?ci_sign=b06ecb24355917be2440a416b519d692a3668673
ICE3BR1765JXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 1.5A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR1765JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE9949306FB11E998BF&compId=ICE3RBR1765JZ.pdf?ci_sign=51e37586229cebaa7e3a4060c0ad23c8a6fdf5ec
ICE3RBR1765JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR4765JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492F6789822D8BF&compId=ICE3RBR4765JZ.pdf?ci_sign=ede773950aa5318fcee8c2f31f82a013a22b1219
ICE3RBR4765JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Operating temperature: -40...130°C
Case: DIP7
Topology: flyback
Mounting: THT
Application: SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Duty cycle factor: 0...75%
Number of channels: 1
Operating voltage: 10.5...25V DC
Power: 26/18W
Input voltage: 85...265V
Breakdown voltage: 650V
Frequency: 65kHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0906NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875B1D58D0211C&compId=BSC0906NS-DTE.pdf?ci_sign=86654d924452c6631898cc76a12dd5eb308b8719
BSC0906NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
120+0.6 EUR
156+0.46 EUR
174+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6B1F1A6F5005056AB5A8F&compId=irfb3077pbf.pdf?ci_sign=eb560ed04d0f30ce819df2a516ae68749dafec84
IRFB3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 370W
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
41+1.77 EUR
50+1.72 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BGA524N6E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84AD79882F6640D2&compId=BGA524N6.pdf?ci_sign=71cefdfaa396b54cd6f68001cfc818fd4743cc12
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Case: TSNP6
Mounting: SMT
Kind of package: reel; tape
Bandwidth: 1550...1615MHz
Application: global navigation satellite systems (GPS)
Integrated circuit features: low noise
Type of integrated circuit: RF amplifier
Operating temperature: -40...85°C
Noise Figure: 0.55dB
Number of channels: 1
Operating voltage: 1.5...3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS640S2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CD6C94488469&compId=BTS640S2G.pdf?ci_sign=6ab6339076f7ce3792ac6be94012d605c8ecfe8b
BTS640S2G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Case: TO263-7
On-state resistance: 27mΩ
Mounting: SMD
Output current: 11.4A
Number of channels: 1
Supply voltage: 5...34V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Kind of output: N-Channel
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
14+5.31 EUR
100+4.29 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IR2183SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
Mindestbestellmenge: 23
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BAS2103WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0
BAS2103WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW
Reverse recovery time: 50ns
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Features of semiconductor devices: ultrafast switching
auf Bestellung 7890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
397+0.18 EUR
455+0.16 EUR
645+0.11 EUR
751+0.095 EUR
1038+0.069 EUR
1169+0.061 EUR
3000+0.058 EUR
Mindestbestellmenge: 334
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BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
355+0.2 EUR
395+0.18 EUR
450+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 355
Im Einkaufswagen  Stück im Wert von  UAH
IRF630NPBF description irf630n.pdf
IRF630NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
116+0.62 EUR
132+0.54 EUR
141+0.51 EUR
149+0.48 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
IRF630NSTRLPBF irf630npbf.pdf
IRF630NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.75 EUR
Mindestbestellmenge: 26
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SPA17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
21+3.49 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
13+5.51 EUR
25+4.95 EUR
100+4.69 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
35+2.09 EUR
50+1.84 EUR
100+1.66 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SPW17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.4 EUR
18+4.02 EUR
21+3.42 EUR
30+3.13 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9120NTRPBF description pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
73+0.99 EUR
99+0.72 EUR
112+0.64 EUR
200+0.57 EUR
250+0.55 EUR
500+0.5 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540NLPBF irf9540nspbf.pdf
IRF9540NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
32+2.29 EUR
50+1.96 EUR
100+1.83 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540NPBF irf9540n.pdf
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Kind of package: tube
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540NSTRLPBF description irf9540nspbf.pdf
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF12A53ADB7F5EA&compId=IRLR7843TRPBF.pdf?ci_sign=811800f91ae3ae22ef949fd280234228e68a7137
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IRFP1405PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B2A151B7CBBF4A15&compId=irfp1405pbf.pdf?ci_sign=dc842e80b63cc194f40a38909618016841365ed4
IRFP1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Kind of channel: enhancement
Case: TO247AC
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 110A
Technology: HEXFET®
Power dissipation: 310W
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
26+2.79 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFP140NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAA3F1A6F5005056AB5A8F&compId=irfp140n.pdf?ci_sign=fcc855513258caba7b984ad9c289a988f08e4045
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
46+1.59 EUR
50+1.46 EUR
53+1.37 EUR
100+1.29 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
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