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IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAA3F1A6F5005056AB5A8F&compId=irfp140n.pdf?ci_sign=fcc855513258caba7b984ad9c289a988f08e4045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
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34+2.13 EUR
44+1.63 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 34
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KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CF734AC77FAAFA8&compId=KIT-XMC11-BOOT-001-DTE.pdf?ci_sign=ef6462c854920b7069dbe0820df11cbb8f6c9376 Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAC8ACBFD611C&compId=BSC150N03LDG-DTE.pdf?ci_sign=d2b4cd9da2292db7bf6454f06b5bc3388eaf7918 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F215A33882811C&compId=BSO150N03MDG-DTE.pdf?ci_sign=154f009a54dd3f61ead2ec23389e475b9675f797 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Power dissipation: 0.1W
auf Bestellung 1242 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
202+0.35 EUR
242+0.30 EUR
355+0.20 EUR
397+0.18 EUR
432+0.17 EUR
459+0.16 EUR
Mindestbestellmenge: 148
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BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
132+0.54 EUR
201+0.36 EUR
213+0.34 EUR
300+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 107
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IR21271PBF IR21271PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 9...20V DC
Turn-on time: 150ns
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: THT
auf Bestellung 44 Stücke:
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23+3.19 EUR
27+2.66 EUR
29+2.52 EUR
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IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 9...20V DC
Turn-on time: 150ns
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: SMD
auf Bestellung 36 Stücke:
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25+2.92 EUR
36+1.99 EUR
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IR2127PBF IR2127PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 12...20V DC
Turn-on time: 0.2µs
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: THT
auf Bestellung 37 Stücke:
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20+3.76 EUR
22+3.39 EUR
28+2.60 EUR
30+2.46 EUR
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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3443F1A6F5005056AB5A8F&compId=ir2127spbf.pdf?ci_sign=203f11987e306e198516b74fa296a60c82b6b5ef Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: SMD
auf Bestellung 53 Stücke:
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23+3.16 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 23
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IGT60R190D1SATMA1 IGT60R190D1SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE4549364958BF&compId=IGT60R190D1SATMA1.pdf?ci_sign=500d5346868d9d0d739574ae6a7257e739be002c Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 55.5W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate current: 7.7mA
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Pulsed drain current: 23A
auf Bestellung 3 Stücke:
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3+23.84 EUR
Mindestbestellmenge: 3
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IRLZ24NSTRLPBF IRLZ24NSTRLPBF INFINEON TECHNOLOGIES irlz24nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRFP3077PBF IRFP3077PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACADBF1A6F5005056AB5A8F&compId=irfp3077pbf.pdf?ci_sign=38aa3277a7433eff22b1057a39ac52cbd0fb9e09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Power dissipation: 340W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Topology: single transistor
Voltage class: 600V
Power: 1W
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
30+2.39 EUR
32+2.25 EUR
Mindestbestellmenge: 22
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33FDF1A6F5005056AB5A8F&compId=ir2111.pdf?ci_sign=cfae4f602fb7282d14336c0c0f16766cd0eadcb6 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Topology: MOSFET half-bridge
Turn-off time: 190ns
Voltage class: 600V
Turn-on time: 830ns
Supply voltage: 10...20V DC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 24
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 24
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BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
695+0.10 EUR
736+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 295
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BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT223
auf Bestellung 1072 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
88+0.81 EUR
153+0.47 EUR
162+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 74
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.95A
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
305+0.23 EUR
371+0.19 EUR
463+0.15 EUR
603+0.12 EUR
Mindestbestellmenge: 179
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5EF6CF788910B&compId=BSD840NH6327XTSA1.pdf?ci_sign=5b04d5f43bcba673eb33cf4377e0362af3f23a9e Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.88A
auf Bestellung 3936 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
309+0.23 EUR
360+0.20 EUR
459+0.16 EUR
794+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 209
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7D848CA9B710B&compId=BSS214NWH6327XTSA1.pdf?ci_sign=5c615cce946f0aa6b4aace9b25942d6eab7b2b3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT323
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)
241+0.30 EUR
341+0.21 EUR
509+0.14 EUR
587+0.12 EUR
852+0.08 EUR
901+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 241
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IRL2505PBF IRL2505PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227317C98B92F1A303005056AB0C4F&compId=irl2505pbf.pdf?ci_sign=f6bfba5649d0dd9c0ee6df3f8e5c34860d2b83d7 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
35+2.04 EUR
47+1.53 EUR
50+1.44 EUR
Mindestbestellmenge: 29
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IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6FF95B2795EA&compId=IRF7201TRPBF.pdf?ci_sign=1faf568f52c19e8c6dcda73263526dccd2553458 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73B8475059F1A303005056AB0C4F&compId=irf7205pbf.pdf?ci_sign=9c16f80a8aabbea691f6d1023906fcaa71ff4780 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3543 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 100
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IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Drain-source voltage: 100V
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain current: 38A
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3717611A24FA8&compId=IGW40N120H3-DTE.pdf?ci_sign=6b7e50c22310b6e9d6b61594307c9e8b688024d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.99 EUR
14+5.19 EUR
90+5.12 EUR
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.29 EUR
21+3.53 EUR
22+3.33 EUR
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0A66D3DFBB8BF&compId=IKW40N120CS6.pdf?ci_sign=31fae688f4eaa08099e8297f1be2823d2dbebf7b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.11 EUR
16+4.70 EUR
17+4.45 EUR
Mindestbestellmenge: 11
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4B1227AD871CC&compId=IKW40N120H3-DTE.pdf?ci_sign=f8b339f1e873d397d5d01461d09440706297c41f Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD0E2F7E6320259&compId=IKW40N120T2.pdf?ci_sign=6bbbb8c74de3acef3716a77652baf5b260d1e5ac Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Type of transistor: IGBT
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.27 EUR
10+7.44 EUR
Mindestbestellmenge: 7
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 51
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Produkt ist nicht verfügbar
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PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.21 EUR
8+9.27 EUR
9+8.75 EUR
Mindestbestellmenge: 6
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 28A
Pulsed collector current: 80A
Turn-on time: 27ns
Turn-off time: 137ns
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 60A
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 25A
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.80 EUR
25+2.92 EUR
26+2.76 EUR
100+2.66 EUR
Mindestbestellmenge: 15
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D5A62F654D811C&compId=SPD50N03S207G-DTE.pdf?ci_sign=068d79be9e9d324ac6f1de7a5a630c5f9ecd67a2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.70 EUR
107+0.67 EUR
112+0.64 EUR
114+0.63 EUR
117+0.61 EUR
500+0.60 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FCC41651611C&compId=BSC050N03LSG-DTE.pdf?ci_sign=55fc8546e1bdca0ab93af1429ad045914edb6305 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FE70931A411C&compId=BSC050N03MSG-DTE.pdf?ci_sign=30504bf576f6632aed8312b78da20e1992fd0544 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0EB1F2E8A11C&compId=BSZ050N03LSG-DTE.pdf?ci_sign=9f16a7c062b56041a9272d38bed4641b6e009ba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E131A2C06811C&compId=BSZ050N03MSG-DTE.pdf?ci_sign=2cf09708082e3be57659c3c3e831485885c116b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31FCD9EF4C11C&compId=IPD050N03LG-DTE.pdf?ci_sign=d06db5c93bba5c2107dc7137cf96d635f8618866 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
73+0.99 EUR
115+0.62 EUR
122+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 50
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SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.05 EUR
34+2.16 EUR
35+2.04 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.80 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 19
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SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 50V
Drain current: 3A
auf Bestellung 3063 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.15 EUR
97+0.74 EUR
274+0.26 EUR
290+0.25 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7103QTR AUIRF7103QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Power dissipation: 2.4W
Gate charge: 10nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP140NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAA3F1A6F5005056AB5A8F&compId=irfp140n.pdf?ci_sign=fcc855513258caba7b984ad9c289a988f08e4045
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
44+1.63 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 34
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KIT_XMC11_BOOT_001 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CF734AC77FAAFA8&compId=KIT-XMC11-BOOT-001-DTE.pdf?ci_sign=ef6462c854920b7069dbe0820df11cbb8f6c9376
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAC8ACBFD611C&compId=BSC150N03LDG-DTE.pdf?ci_sign=d2b4cd9da2292db7bf6454f06b5bc3388eaf7918
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F215A33882811C&compId=BSO150N03MDG-DTE.pdf?ci_sign=154f009a54dd3f61ead2ec23389e475b9675f797
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Power dissipation: 0.1W
auf Bestellung 1242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
202+0.35 EUR
242+0.30 EUR
355+0.20 EUR
397+0.18 EUR
432+0.17 EUR
459+0.16 EUR
Mindestbestellmenge: 148
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BAT6804WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
132+0.54 EUR
201+0.36 EUR
213+0.34 EUR
300+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 107
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IR21271PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 9...20V DC
Turn-on time: 150ns
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: THT
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
27+2.66 EUR
29+2.52 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR21271SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 9...20V DC
Turn-on time: 150ns
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: SMD
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
36+1.99 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IR2127PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 12...20V DC
Turn-on time: 0.2µs
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: THT
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
22+3.39 EUR
28+2.60 EUR
30+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2127SPBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3443F1A6F5005056AB5A8F&compId=ir2127spbf.pdf?ci_sign=203f11987e306e198516b74fa296a60c82b6b5ef
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 0.2µs
Turn-off time: 150ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: SMD
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 23
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IGT60R190D1SATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE4549364958BF&compId=IGT60R190D1SATMA1.pdf?ci_sign=500d5346868d9d0d739574ae6a7257e739be002c
IGT60R190D1SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 55.5W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate current: 7.7mA
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Pulsed drain current: 23A
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NSTRLPBF irlz24nspbf.pdf
IRLZ24NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFP3077PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACADBF1A6F5005056AB5A8F&compId=irfp3077pbf.pdf?ci_sign=38aa3277a7433eff22b1057a39ac52cbd0fb9e09
IRFP3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Power dissipation: 340W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Topology: single transistor
Voltage class: 600V
Power: 1W
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
30+2.39 EUR
32+2.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2117SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IR2111PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33FDF1A6F5005056AB5A8F&compId=ir2111.pdf?ci_sign=cfae4f602fb7282d14336c0c0f16766cd0eadcb6
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Topology: MOSFET half-bridge
Turn-off time: 190ns
Voltage class: 600V
Turn-on time: 830ns
Supply voltage: 10...20V DC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2111SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BC847PNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
695+0.10 EUR
736+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 295
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BSP125H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT223
auf Bestellung 1072 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
88+0.81 EUR
153+0.47 EUR
162+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 74
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BSD235NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.95A
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
305+0.23 EUR
371+0.19 EUR
463+0.15 EUR
603+0.12 EUR
Mindestbestellmenge: 179
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BSD840NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5EF6CF788910B&compId=BSD840NH6327XTSA1.pdf?ci_sign=5b04d5f43bcba673eb33cf4377e0362af3f23a9e
BSD840NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.88A
auf Bestellung 3936 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
309+0.23 EUR
360+0.20 EUR
459+0.16 EUR
794+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 209
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BSS214NWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7D848CA9B710B&compId=BSS214NWH6327XTSA1.pdf?ci_sign=5c615cce946f0aa6b4aace9b25942d6eab7b2b3c
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT323
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
241+0.30 EUR
341+0.21 EUR
509+0.14 EUR
587+0.12 EUR
852+0.08 EUR
901+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 241
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IRL2505PBF description pVersion=0046&contRep=ZT&docId=E2227317C98B92F1A303005056AB0C4F&compId=irl2505pbf.pdf?ci_sign=f6bfba5649d0dd9c0ee6df3f8e5c34860d2b83d7
IRL2505PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
35+2.04 EUR
47+1.53 EUR
50+1.44 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7201TRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6FF95B2795EA&compId=IRF7201TRPBF.pdf?ci_sign=1faf568f52c19e8c6dcda73263526dccd2553458
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7205TRPBF description pVersion=0046&contRep=ZT&docId=E21F73B8475059F1A303005056AB0C4F&compId=irf7205pbf.pdf?ci_sign=9c16f80a8aabbea691f6d1023906fcaa71ff4780
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Drain-source voltage: 100V
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain current: 38A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3717611A24FA8&compId=IGW40N120H3-DTE.pdf?ci_sign=6b7e50c22310b6e9d6b61594307c9e8b688024d8
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.99 EUR
14+5.19 EUR
90+5.12 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.29 EUR
21+3.53 EUR
22+3.33 EUR
Mindestbestellmenge: 12
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IKQ40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0A66D3DFBB8BF&compId=IKW40N120CS6.pdf?ci_sign=31fae688f4eaa08099e8297f1be2823d2dbebf7b
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.11 EUR
16+4.70 EUR
17+4.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4B1227AD871CC&compId=IKW40N120H3-DTE.pdf?ci_sign=f8b339f1e873d397d5d01461d09440706297c41f
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKW40N120T2FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD0E2F7E6320259&compId=IKW40N120T2.pdf?ci_sign=6bbbb8c74de3acef3716a77652baf5b260d1e5ac
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Type of transistor: IGBT
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.44 EUR
Mindestbestellmenge: 7
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IKY40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD090N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 51
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IRL2203NSTRLPBF pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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PVT422PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.21 EUR
8+9.27 EUR
9+8.75 EUR
Mindestbestellmenge: 6
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IGB20N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 28A
Pulsed collector current: 80A
Turn-on time: 27ns
Turn-off time: 137ns
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 60A
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 25A
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.80 EUR
25+2.92 EUR
26+2.76 EUR
100+2.66 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SPD50N03S207GBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D5A62F654D811C&compId=SPD50N03S207G-DTE.pdf?ci_sign=068d79be9e9d324ac6f1de7a5a630c5f9ecd67a2
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.70 EUR
107+0.67 EUR
112+0.64 EUR
114+0.63 EUR
117+0.61 EUR
500+0.60 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FCC41651611C&compId=BSC050N03LSG-DTE.pdf?ci_sign=55fc8546e1bdca0ab93af1429ad045914edb6305
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FE70931A411C&compId=BSC050N03MSG-DTE.pdf?ci_sign=30504bf576f6632aed8312b78da20e1992fd0544
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0EB1F2E8A11C&compId=BSZ050N03LSG-DTE.pdf?ci_sign=9f16a7c062b56041a9272d38bed4641b6e009ba8
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E131A2C06811C&compId=BSZ050N03MSG-DTE.pdf?ci_sign=2cf09708082e3be57659c3c3e831485885c116b9
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD050N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31FCD9EF4C11C&compId=IPD050N03LG-DTE.pdf?ci_sign=d06db5c93bba5c2107dc7137cf96d635f8618866
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
73+0.99 EUR
115+0.62 EUR
122+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 50
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SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.05 EUR
34+2.16 EUR
35+2.04 EUR
Mindestbestellmenge: 18
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SPP11N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.80 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 19
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SPW11N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7101TRPBF pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBF description pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 50V
Drain current: 3A
auf Bestellung 3063 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.15 EUR
97+0.74 EUR
274+0.26 EUR
290+0.25 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF description pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7105TRPBF description pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF7103QTR pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2
AUIRF7103QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Power dissipation: 2.4W
Gate charge: 10nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9310TRPBF pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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