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BFR193WH6327XTSA1 BFR193WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D2E2BDFF411C&compId=BFR193WH6327-dte.pdf?ci_sign=d5d4bdb519ab3c0349eced101a0ebc15d034d71a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 80mA
auf Bestellung 1904 Stücke:
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143+0.5 EUR
175+0.41 EUR
302+0.24 EUR
358+0.2 EUR
506+0.14 EUR
532+0.13 EUR
Mindestbestellmenge: 143
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IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31B6D92D6611C&compId=IPD040N03LG-DTE.pdf?ci_sign=c43f580ccbbda67e3eef56e4bc1c1ff14680a8f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2678 Stücke:
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52+1.39 EUR
82+0.88 EUR
120+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
2500+0.43 EUR
Mindestbestellmenge: 52
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 6A
Gate-emitter voltage: ±20V
auf Bestellung 40 Stücke:
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39+1.86 EUR
40+1.79 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 810 Stücke:
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45+1.62 EUR
70+1.03 EUR
102+0.71 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 509 Stücke:
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36+1.99 EUR
49+1.49 EUR
64+1.13 EUR
100+1.07 EUR
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BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E361D77DC011C&compId=BSZ100N03LSG-DTE.pdf?ci_sign=0aeb2ea04dbf0d85a37550526f88d1a53c2c8176 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3910A65E211C&compId=BSZ100N03MSG-DTE.pdf?ci_sign=3167bf6ff8d6294dd6408c2209455b666caa1dc8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF2804PBF IRF2804PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB93F1A6F5005056AB5A8F&compId=irf2804pbf.pdf?ci_sign=9f2cd0b5281445cfe2b663272a91b969b93b978a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 259 Stücke:
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32+2.26 EUR
42+1.73 EUR
50+1.5 EUR
100+1.42 EUR
250+1.3 EUR
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IRF2804STRLPBF IRF2804STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD9C7052ECFB5EA&compId=IRF2804STRLPBF.pdf?ci_sign=ceb1c25cab55bb73207a20aedeee782175571ebd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 751 Stücke:
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22+3.35 EUR
30+2.45 EUR
44+1.66 EUR
46+1.56 EUR
500+1.5 EUR
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IRF2804STRRPBF IRF2804STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC55F4DADF75EA&compId=IRF2804STRRPBF.pdf?ci_sign=9690775b0b0968417ea458182b3ffc7d6f880934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804STRL AUIRF2804STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D51A6F1A6F5005056AB5A8F&compId=auirf2804.pdf?ci_sign=48273ccb52c8944e4920d69227ea85c7a621f551 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC726401B1413D7&compId=AUIRGP4062D.pdf?ci_sign=abe2566713006bbfdcfca57c4d542d338b09fdab Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
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IRFS23N20DTRLP IRFS23N20DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEF4AA2A1A2143&compId=IRFS23N20DTRLP.pdf?ci_sign=9f6ed2347050e53086604115e4da51f6ccbf05a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3004TRLPBF INFINEON TECHNOLOGIES irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRL7PP IRFS3006TRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C606F53EBAF1A303005056AB0C4F&compId=irfs3006-7ppbf.pdf?ci_sign=d684293d8cda10b025102521ccf3680057339b6f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRLPBF INFINEON TECHNOLOGIES irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRL7PP IRFS3107TRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRLPBF IRFS3107TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3306TRLPBF IRFS3306TRLPBF INFINEON TECHNOLOGIES irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 379 Stücke:
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25+2.96 EUR
26+2.79 EUR
31+2.35 EUR
34+2.16 EUR
50+1.9 EUR
100+1.73 EUR
200+1.63 EUR
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IRFS3307ZTRLPBF IRFS3307ZTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF49FF83CD95EA&compId=IRFS3307ZTRLPBF.pdf?ci_sign=106fcfce984a17d8761c0f0f26faa5bffc97d713 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3806TRLPBF INFINEON TECHNOLOGIES irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS38N20DTRLP IRFS38N20DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C7A499B34BF1A303005056AB0C4F&compId=irfs38n20dpbf.pdf?ci_sign=9b5c070acd025a5b666bc589cb087f874778b453 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4010TRL7PP INFINEON TECHNOLOGIES irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 740A
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4020TRLPBF IRFS4020TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4F1965D875EA&compId=IRFS4020TRLPBF.pdf?ci_sign=fab949482923513abf23ec76eccd56e21f9ee684 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS4115TRLPBF INFINEON TECHNOLOGIES irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4127TRLPBF IRFS4127TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C80D350D83F1A303005056AB0C4F&compId=irfs4127pbf.pdf?ci_sign=c3b84bbd7abf80a7477d4d92685476a7d076ad1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 779 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
27+2.72 EUR
30+2.42 EUR
50+2.06 EUR
100+1.86 EUR
200+1.84 EUR
Mindestbestellmenge: 20
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BSP149H6327XTSA1 BSP149H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B764EFF996611C&compId=BSP149H6327XTSA1.pdf?ci_sign=2e341726376cd098a1dd94399f757045beabb8c7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1396 Stücke:
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44+1.64 EUR
69+1.05 EUR
112+0.64 EUR
118+0.61 EUR
500+0.58 EUR
Mindestbestellmenge: 44
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BSP149H6906XTSA1 BSP149H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Case: SOT223
Technology: SIPMOS®
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF7805TRPBF IRF7805TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AAB9AF9695F1A303005056AB0C4F&compId=irf7805pbf.pdf?ci_sign=443ae672556fdca4e15edb1e1122c36e4d066fc1 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AAD84A1F7EF1A303005056AB0C4F&compId=irf7805zpbf.pdf?ci_sign=477441440a9e246de6443801c45f03308c5647d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF3808PBF IRF3808PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AE8F1A6F5005056AB5A8F&compId=irf3808.pdf?ci_sign=9b75e9d1b7ae4216cd6e064857a08cfc6f4e1820 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 150nC
Kind of package: tube
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.4 EUR
36+2.03 EUR
40+1.83 EUR
50+1.7 EUR
100+1.59 EUR
250+1.42 EUR
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IRF3808STRLPBF IRF3808STRLPBF INFINEON TECHNOLOGIES irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 474 Stücke:
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20+3.75 EUR
24+2.99 EUR
27+2.75 EUR
30+2.46 EUR
50+2.26 EUR
100+2.04 EUR
125+2 EUR
250+1.82 EUR
Mindestbestellmenge: 20
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BTS5215L BTS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987CBDA9CF8469&compId=BTS5215L.pdf?ci_sign=d07d7e318e650d9718d976f18de6af9dbefa4b2e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Number of channels: 2
Output current: 3.7A
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 917 Stücke:
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13+5.61 EUR
17+4.26 EUR
26+2.83 EUR
27+2.67 EUR
500+2.57 EUR
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IRF2805PBF IRF2805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABA8F1A6F5005056AB5A8F&compId=irf2805.pdf?ci_sign=75f46d0371246f527250018376170da7c42dbc3a description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 150nC
On-state resistance: 4.7mΩ
auf Bestellung 369 Stücke:
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64+1.13 EUR
68+1.06 EUR
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IRF2805STRLPBF IRF2805STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F9415D53DF1A303005056AB0C4F&compId=irf2805spbf.pdf?ci_sign=de92fdc8f6ae8f1bc7e2c301ba6d3231b8470cbf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB7A0F9993D820&compId=IGB50N65H5.pdf?ci_sign=c80c470858009409ab30cbd2d7519e5c0d06a463 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 147ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB81BC395BB820&compId=IGB50N65S5.pdf?ci_sign=0778718709225d6346585e04ae937444174763cc Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IGW50N65F5FKSA1 IGW50N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BAFB0E0EF0AE2A18&compId=IGW50N65F5.pdf?ci_sign=58957c2cf056abb404f562d57cb4dd27fa5e9e23 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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IGW50N65H5FKSA1 IGW50N65H5FKSA1 INFINEON TECHNOLOGIES DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IGZ50N65H5XKSA1 IGZ50N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6D68D8FA90A18&compId=IGZ50N65H5.pdf?ci_sign=96a64ded9d76f49e106ee56fcc6bd28a53b58942 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 271ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 50ns
Turn-off time: 218ns
Technology: TRENCHSTOP™ 5
auf Bestellung 178 Stücke:
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16+4.59 EUR
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IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF29AD2429DB820&compId=IKW50N65EH5.pdf?ci_sign=543bacaa290afb265262e30a541ac32eec8829b1 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 207ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2A0C69FC8B820&compId=IKW50N65ES5.pdf?ci_sign=37d8685f6023c7efb5ad42c81aa82f3ae004e6ee Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 47ns
Turn-off time: 161ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C32ED04EF1CC&compId=IKW50N65F5-DTE.pdf?ci_sign=bba1665e443f317af0d8789097c07047bfdea290 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 171 Stücke:
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18+4.18 EUR
26+2.77 EUR
30+2.42 EUR
60+2.4 EUR
Mindestbestellmenge: 18
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IKW50N65H5FKSA1 IKW50N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B905150E9D8FA8&compId=IKW50N65H5FKSA1-DTE.pdf?ci_sign=7f10bd8bc8b551f0edda00af4f15d07c1c38118b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.35 EUR
17+4.36 EUR
20+3.82 EUR
30+3.72 EUR
Mindestbestellmenge: 14
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IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2C6F50809D820&compId=IKW50N65WR5.pdf?ci_sign=8c4c9b0d0d9ac5f3cfcced20f163a629fe87121b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 79ns
Turn-off time: 420ns
Technology: TRENCHSTOP™ 5
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.98 EUR
16+4.59 EUR
Mindestbestellmenge: 15
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5B41609FDF3D7&compId=IKZ50N65ES5.pdf?ci_sign=164ad88ab6dd00700ae40f6b09533ca8d88ec35b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 58ns
Turn-off time: 326ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKZ50N65NH5XKSA1 IKZ50N65NH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C72DD820EC4A18&compId=IKZ50N65NH5.pdf?ci_sign=e634198c5e8edd6d50febfc52496a0b32b6a9135 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 30ns
Turn-off time: 275ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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BTS3410GXUMA1 BTS3410GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8F98EFB4E259&compId=BTS3410G.pdf?ci_sign=ddc0179d6d16bdce0acde891ec45a1db5ab766cf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.3A
On-state resistance: 0.2Ω
Power dissipation: 0.8W
Number of channels: 2
Kind of integrated circuit: low-side
Case: PG-DSO-8
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
50+1.46 EUR
53+1.37 EUR
55+1.3 EUR
57+1.26 EUR
Mindestbestellmenge: 23
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IRLR3705ZTRPBF IRLR3705ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF120FD286C55EA&compId=IRLR3705ZTRPBF.pdf?ci_sign=35ad5f87f1b8ef08e2a63ecd16eb41e8ada71222 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Polarisation: unipolar
auf Bestellung 1062 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
48+1.5 EUR
64+1.13 EUR
Mindestbestellmenge: 34
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BTS3408GXUMA2 BTS3408GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799BFFC16F7AF0749&compId=BTS3408G.pdf?ci_sign=4799b98e7393b94cd3de40caf24b56a0f30f968a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Operating temperature: -40...150°C
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 0.55A
Turn-off time: 2µs
Turn-on time: 2µs
On-state resistance: 0.48Ω
Power dissipation: 0.88W
Number of channels: 2
Supply voltage: 4.5...60V DC
Output voltage: 60V
Kind of integrated circuit: low-side
Case: PG-DSO-8
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
38+1.89 EUR
40+1.79 EUR
500+1.77 EUR
1000+1.72 EUR
Mindestbestellmenge: 29
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IRLR2703TRPBF INFINEON TECHNOLOGIES irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 96A
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRLR2705TRLPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 110A
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRLR2705TRPBF IRLR2705TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E605A45B0F1A303005056AB0C4F&compId=irlr2705pbf.pdf?ci_sign=b6baeb06276ab86ae10757cd8e517e59dd6be110 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
91+0.79 EUR
120+0.6 EUR
250+0.29 EUR
265+0.27 EUR
Mindestbestellmenge: 71
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227EB606ADACF1A303005056AB0C4F&compId=irlr3103pbf.pdf?ci_sign=3cef654ee8f937478c9dc59895a9dc4f14faaa1c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227ED532A6AAF1A303005056AB0C4F&compId=irlr3105pbf.pdf?ci_sign=27e86e922a975b9332692ad13636276895f80f4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.73 EUR
15+5.06 EUR
16+4.5 EUR
30+3.76 EUR
Mindestbestellmenge: 13
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BFR193WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D2E2BDFF411C&compId=BFR193WH6327-dte.pdf?ci_sign=d5d4bdb519ab3c0349eced101a0ebc15d034d71a
BFR193WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 80mA
auf Bestellung 1904 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
175+0.41 EUR
302+0.24 EUR
358+0.2 EUR
506+0.14 EUR
532+0.13 EUR
Mindestbestellmenge: 143
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IPD040N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31B6D92D6611C&compId=IPD040N03LG-DTE.pdf?ci_sign=c43f580ccbbda67e3eef56e4bc1c1ff14680a8f1
IPD040N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
82+0.88 EUR
120+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
2500+0.43 EUR
Mindestbestellmenge: 52
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IGP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 6A
Gate-emitter voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
40+1.79 EUR
Mindestbestellmenge: 39
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IKD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
70+1.03 EUR
102+0.71 EUR
Mindestbestellmenge: 45
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IKP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.49 EUR
64+1.13 EUR
100+1.07 EUR
Mindestbestellmenge: 36
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BSZ100N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E361D77DC011C&compId=BSZ100N03LSG-DTE.pdf?ci_sign=0aeb2ea04dbf0d85a37550526f88d1a53c2c8176
BSZ100N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ100N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3910A65E211C&compId=BSZ100N03MSG-DTE.pdf?ci_sign=3167bf6ff8d6294dd6408c2209455b666caa1dc8
BSZ100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF2804PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB93F1A6F5005056AB5A8F&compId=irf2804pbf.pdf?ci_sign=9f2cd0b5281445cfe2b663272a91b969b93b978a
IRF2804PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
42+1.73 EUR
50+1.5 EUR
100+1.42 EUR
250+1.3 EUR
Mindestbestellmenge: 32
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IRF2804STRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD9C7052ECFB5EA&compId=IRF2804STRLPBF.pdf?ci_sign=ceb1c25cab55bb73207a20aedeee782175571ebd
IRF2804STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
30+2.45 EUR
44+1.66 EUR
46+1.56 EUR
500+1.5 EUR
Mindestbestellmenge: 22
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IRF2804STRRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC55F4DADF75EA&compId=IRF2804STRRPBF.pdf?ci_sign=9690775b0b0968417ea458182b3ffc7d6f880934
IRF2804STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804STRL pVersion=0046&contRep=ZT&docId=E1C045883D51A6F1A6F5005056AB5A8F&compId=auirf2804.pdf?ci_sign=48273ccb52c8944e4920d69227ea85c7a621f551
AUIRF2804STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGP4062D pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC726401B1413D7&compId=AUIRGP4062D.pdf?ci_sign=abe2566713006bbfdcfca57c4d542d338b09fdab
AUIRGP4062D
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
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IRFS23N20DTRLP pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEF4AA2A1A2143&compId=IRFS23N20DTRLP.pdf?ci_sign=9f6ed2347050e53086604115e4da51f6ccbf05a5
IRFS23N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3004TRLPBF irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRL7PP pVersion=0046&contRep=ZT&docId=E221C606F53EBAF1A303005056AB0C4F&compId=irfs3006-7ppbf.pdf?ci_sign=d684293d8cda10b025102521ccf3680057339b6f
IRFS3006TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRLPBF irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRL7PP pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658
IRFS3107TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRLPBF pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658
IRFS3107TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde
IRFS3206TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3306TRLPBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFS3306TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
26+2.79 EUR
31+2.35 EUR
34+2.16 EUR
50+1.9 EUR
100+1.73 EUR
200+1.63 EUR
Mindestbestellmenge: 25
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IRFS3307ZTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF49FF83CD95EA&compId=IRFS3307ZTRLPBF.pdf?ci_sign=106fcfce984a17d8761c0f0f26faa5bffc97d713
IRFS3307ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3806TRLPBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS38N20DTRLP pVersion=0046&contRep=ZT&docId=E221C7A499B34BF1A303005056AB0C4F&compId=irfs38n20dpbf.pdf?ci_sign=9b5c070acd025a5b666bc589cb087f874778b453
IRFS38N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4010TRL7PP irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 740A
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4020TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4F1965D875EA&compId=IRFS4020TRLPBF.pdf?ci_sign=fab949482923513abf23ec76eccd56e21f9ee684
IRFS4020TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4115TRLPBF irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4127TRLPBF pVersion=0046&contRep=ZT&docId=E221C80D350D83F1A303005056AB0C4F&compId=irfs4127pbf.pdf?ci_sign=c3b84bbd7abf80a7477d4d92685476a7d076ad1a
IRFS4127TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 779 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
27+2.72 EUR
30+2.42 EUR
50+2.06 EUR
100+1.86 EUR
200+1.84 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BSP149H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B764EFF996611C&compId=BSP149H6327XTSA1.pdf?ci_sign=2e341726376cd098a1dd94399f757045beabb8c7
BSP149H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
69+1.05 EUR
112+0.64 EUR
118+0.61 EUR
500+0.58 EUR
Mindestbestellmenge: 44
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BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Case: SOT223
Technology: SIPMOS®
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805TRPBF description pVersion=0046&contRep=ZT&docId=E221AAB9AF9695F1A303005056AB0C4F&compId=irf7805pbf.pdf?ci_sign=443ae672556fdca4e15edb1e1122c36e4d066fc1
IRF7805TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805ZTRPBF pVersion=0046&contRep=ZT&docId=E221AAD84A1F7EF1A303005056AB0C4F&compId=irf7805zpbf.pdf?ci_sign=477441440a9e246de6443801c45f03308c5647d7
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF3808PBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AE8F1A6F5005056AB5A8F&compId=irf3808.pdf?ci_sign=9b75e9d1b7ae4216cd6e064857a08cfc6f4e1820
IRF3808PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 150nC
Kind of package: tube
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
36+2.03 EUR
40+1.83 EUR
50+1.7 EUR
100+1.59 EUR
250+1.42 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRF3808STRLPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
24+2.99 EUR
27+2.75 EUR
30+2.46 EUR
50+2.26 EUR
100+2.04 EUR
125+2 EUR
250+1.82 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BTS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987CBDA9CF8469&compId=BTS5215L.pdf?ci_sign=d07d7e318e650d9718d976f18de6af9dbefa4b2e
BTS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Number of channels: 2
Output current: 3.7A
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.61 EUR
17+4.26 EUR
26+2.83 EUR
27+2.67 EUR
500+2.57 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IRF2805PBF description pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABA8F1A6F5005056AB5A8F&compId=irf2805.pdf?ci_sign=75f46d0371246f527250018376170da7c42dbc3a
IRF2805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 150nC
On-state resistance: 4.7mΩ
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
64+1.13 EUR
68+1.06 EUR
Mindestbestellmenge: 48
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IRF2805STRLPBF pVersion=0046&contRep=ZT&docId=E21F5F9415D53DF1A303005056AB0C4F&compId=irf2805spbf.pdf?ci_sign=de92fdc8f6ae8f1bc7e2c301ba6d3231b8470cbf
IRF2805STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGB50N65H5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB7A0F9993D820&compId=IGB50N65H5.pdf?ci_sign=c80c470858009409ab30cbd2d7519e5c0d06a463
IGB50N65H5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 147ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB81BC395BB820&compId=IGB50N65S5.pdf?ci_sign=0778718709225d6346585e04ae937444174763cc
IGB50N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BAFB0E0EF0AE2A18&compId=IGW50N65F5.pdf?ci_sign=58957c2cf056abb404f562d57cb4dd27fa5e9e23
IGW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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IGW50N65H5FKSA1 DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25
IGW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGZ50N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6D68D8FA90A18&compId=IGZ50N65H5.pdf?ci_sign=96a64ded9d76f49e106ee56fcc6bd28a53b58942
IGZ50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 271ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW50N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 50ns
Turn-off time: 218ns
Technology: TRENCHSTOP™ 5
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65EH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF29AD2429DB820&compId=IKW50N65EH5.pdf?ci_sign=543bacaa290afb265262e30a541ac32eec8829b1
IKW50N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 207ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW50N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2A0C69FC8B820&compId=IKW50N65ES5.pdf?ci_sign=37d8685f6023c7efb5ad42c81aa82f3ae004e6ee
IKW50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 47ns
Turn-off time: 161ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C32ED04EF1CC&compId=IKW50N65F5-DTE.pdf?ci_sign=bba1665e443f317af0d8789097c07047bfdea290
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
26+2.77 EUR
30+2.42 EUR
60+2.4 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B905150E9D8FA8&compId=IKW50N65H5FKSA1-DTE.pdf?ci_sign=7f10bd8bc8b551f0edda00af4f15d07c1c38118b
IKW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
17+4.36 EUR
20+3.82 EUR
30+3.72 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2C6F50809D820&compId=IKW50N65WR5.pdf?ci_sign=8c4c9b0d0d9ac5f3cfcced20f163a629fe87121b
IKW50N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 79ns
Turn-off time: 420ns
Technology: TRENCHSTOP™ 5
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.98 EUR
16+4.59 EUR
Mindestbestellmenge: 15
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IKZ50N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5B41609FDF3D7&compId=IKZ50N65ES5.pdf?ci_sign=164ad88ab6dd00700ae40f6b09533ca8d88ec35b
IKZ50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 58ns
Turn-off time: 326ns
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ50N65NH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C72DD820EC4A18&compId=IKZ50N65NH5.pdf?ci_sign=e634198c5e8edd6d50febfc52496a0b32b6a9135
IKZ50N65NH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 30ns
Turn-off time: 275ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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BTS3410GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8F98EFB4E259&compId=BTS3410G.pdf?ci_sign=ddc0179d6d16bdce0acde891ec45a1db5ab766cf
BTS3410GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.3A
On-state resistance: 0.2Ω
Power dissipation: 0.8W
Number of channels: 2
Kind of integrated circuit: low-side
Case: PG-DSO-8
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
50+1.46 EUR
53+1.37 EUR
55+1.3 EUR
57+1.26 EUR
Mindestbestellmenge: 23
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IRLR3705ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF120FD286C55EA&compId=IRLR3705ZTRPBF.pdf?ci_sign=35ad5f87f1b8ef08e2a63ecd16eb41e8ada71222
IRLR3705ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Polarisation: unipolar
auf Bestellung 1062 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
48+1.5 EUR
64+1.13 EUR
Mindestbestellmenge: 34
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BTS3408GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE799BFFC16F7AF0749&compId=BTS3408G.pdf?ci_sign=4799b98e7393b94cd3de40caf24b56a0f30f968a
BTS3408GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Operating temperature: -40...150°C
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 0.55A
Turn-off time: 2µs
Turn-on time: 2µs
On-state resistance: 0.48Ω
Power dissipation: 0.88W
Number of channels: 2
Supply voltage: 4.5...60V DC
Output voltage: 60V
Kind of integrated circuit: low-side
Case: PG-DSO-8
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
38+1.89 EUR
40+1.79 EUR
500+1.77 EUR
1000+1.72 EUR
Mindestbestellmenge: 29
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IRLR2703TRPBF irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 96A
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRLR2705TRLPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 110A
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRLR2705TRPBF pVersion=0046&contRep=ZT&docId=E2227E605A45B0F1A303005056AB0C4F&compId=irlr2705pbf.pdf?ci_sign=b6baeb06276ab86ae10757cd8e517e59dd6be110
IRLR2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
91+0.79 EUR
120+0.6 EUR
250+0.29 EUR
265+0.27 EUR
Mindestbestellmenge: 71
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IRLR3103TRPBF pVersion=0046&contRep=ZT&docId=E2227EB606ADACF1A303005056AB0C4F&compId=irlr3103pbf.pdf?ci_sign=3cef654ee8f937478c9dc59895a9dc4f14faaa1c
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLR3105TRPBF pVersion=0046&contRep=ZT&docId=E2227ED532A6AAF1A303005056AB0C4F&compId=irlr3105pbf.pdf?ci_sign=27e86e922a975b9332692ad13636276895f80f4c
IRLR3105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRLR3114ZTRPBF pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IHW30N160R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.73 EUR
15+5.06 EUR
16+4.5 EUR
30+3.76 EUR
Mindestbestellmenge: 13
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