Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148611) > Seite 2458 nach 2477

Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2453 2454 2455 2456 2457 2458 2459 2460 2461 2462 2463 2470 2477  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRF40B207 IRF40B207 INFINEON TECHNOLOGIES IRF40B207.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
65+1.10 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF4104SPBF IRF4104SPBF INFINEON TECHNOLOGIES irf4104pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES auirf4104.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 68nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA029N06NM5SXKSA1 IPA029N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA029N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd953036de6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 348A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA029N06NXKSA1 IPA029N06NXKSA1 INFINEON TECHNOLOGIES IPA029N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7241TRPBF IRF7241TRPBF INFINEON TECHNOLOGIES irf7241pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 41mΩ
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
72+1.00 EUR
86+0.84 EUR
109+0.66 EUR
115+0.62 EUR
120+0.60 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55FFAR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES irfh5250dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES irfh5250pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FV30LL-45ZXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FV30LL-45ZXI INFINEON TECHNOLOGIES Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES IPP60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES IPW60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190E6FKSA1 IPW60R190E6FKSA1 INFINEON TECHNOLOGIES IPW60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES IPP60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R190E6XKSA1 IPA60R190E6XKSA1 INFINEON TECHNOLOGIES IPA60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 INFINEON TECHNOLOGIES IPDD60R190G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 36A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R022S7XKSA1 IPP60R022S7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R280P6XKSA1 IPP60R280P6XKSA1 INFINEON TECHNOLOGIES IPP60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES IPP60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1618KV18-333BZXC INFINEON TECHNOLOGIES Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS10752LTRPBF IRS10752LTRPBF INFINEON TECHNOLOGIES IRS10752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Mounting: SMD
Case: SOT23-6
Operating temperature: -40...125°C
Turn-on time: 225ns
Turn-off time: 255ns
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES BBY55_SER.pdf Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Features of semiconductor devices: RF
auf Bestellung 2038 Stücke:
Lieferzeit 14-21 Tag (e)
131+0.55 EUR
224+0.32 EUR
256+0.28 EUR
271+0.26 EUR
Mindestbestellmenge: 131
Im Einkaufswagen  Stück im Wert von  UAH
CY14MB064Q2A-SXQ INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; tube
Case: SOIC8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Frequency: 40MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14MB064Q2A-SXQT INFINEON TECHNOLOGIES ?docID=46910 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Frequency: 40MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES irfr2407pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 INFINEON TECHNOLOGIES IPZ40N04S53R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5-5R4 IPZ40N04S5-5R4 INFINEON TECHNOLOGIES IPZ40N04S5-5R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 23nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5-8R4 IPZ40N04S5-8R4 INFINEON TECHNOLOGIES IPZ40N04S5-8R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 13.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-2R8 IPZ40N04S5L-2R8 INFINEON TECHNOLOGIES IPZ40N04S5L-2R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Gate charge: 52nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-4R8 IPZ40N04S5L-4R8 INFINEON TECHNOLOGIES IPZ40N04S5L-4R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-7R4 IPZ40N04S5L-7R4 INFINEON TECHNOLOGIES IPZ40N04S5L-7R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 17nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5303WE6327HTSA1 BBY5303WE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BBY53SERIES-DS-v01_01-en.pdf Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Case: SOD323
Capacitance: 1.85...5.8pF
Max. off-state voltage: 6V
Load current: 20mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BB439E6327HTSA1 BB439E6327HTSA1 INFINEON TECHNOLOGIES BB439-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 28V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Case: SOD323
Capacitance: 5.1...53pF
Max. off-state voltage: 28V
Load current: 20mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5302VH6327XTSA1 INFINEON TECHNOLOGIES INFNS15715-1.pdf?t.download=true&u=5oefqw Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 6V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY6602VH6327XTSA1 INFINEON TECHNOLOGIES bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400 Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Max. off-state voltage: 12V
Load current: 50mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Mounting: SMD
Case: SC79
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 INFINEON TECHNOLOGIES IAUT165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Mounting: SMD
Case: PG-HSOF-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICL5101XUMA1 ICL5101XUMA1 INFINEON TECHNOLOGIES ICL5101-DTE.pdf Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES TLE6232GP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Turn-off time: 10µs
Output current: 0.55...1.1A
Number of channels: 6
Turn-on time: 10µs
Technology: FLEX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES TLE6251-2G.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2474 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
421+0.17 EUR
537+0.13 EUR
767+0.09 EUR
1374+0.05 EUR
1450+0.05 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.74 EUR
13+5.79 EUR
18+4.03 EUR
19+3.80 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES IPI024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR13N15DTRPBF IRFR13N15DTRPBF INFINEON TECHNOLOGIES irfr13n15dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 14A
Power dissipation: 86W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BAI010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BAI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF40B207 IRF40B207.pdf
IRF40B207
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
65+1.10 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF4104SPBF description irf4104pbf.pdf
IRF4104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104STRL auirf4104.pdf
AUIRF4104STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 68nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA029N06NM5SXKSA1 Infineon-IPA029N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd953036de6
IPA029N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 348A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA029N06NXKSA1 IPA029N06N-DTE.pdf
IPA029N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7241TRPBF description irf7241pbf.pdf
IRF7241TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 41mΩ
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
72+1.00 EUR
86+0.84 EUR
109+0.66 EUR
115+0.62 EUR
120+0.60 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55BFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55FFAR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250DTRPBF irfh5250dpbf.pdf
IRFH5250DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250TRPBF irfh5250pbf.pdf
IRFH5250TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FV30LL-45ZXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FV30LL-45ZXI Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R060P7 IPP60R060P7.pdf
IPP60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190P6FKSA1 IPW60R190P6-DTE.pdf
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190E6FKSA1 IPW60R190E6-DTE.pdf
IPW60R190E6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190E6XKSA1 IPP60R190E6-DTE.pdf
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R190E6XKSA1 IPA60R190E6-DTE.pdf
IPA60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R190G7XTMA1 IPDD60R190G7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 36A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R280P6XKSA1 IPP60R280P6-DTE.pdf
IPP60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R330P6XKSA1 IPP60R330P6-DTE.pdf
IPP60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1618KV18-333BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS10752LTRPBF IRS10752ltrpbf.pdf
IRS10752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Mounting: SMD
Case: SOT23-6
Operating temperature: -40...125°C
Turn-on time: 225ns
Turn-off time: 255ns
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5502VH6327XTSA1 BBY55_SER.pdf
BBY5502VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Features of semiconductor devices: RF
auf Bestellung 2038 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
131+0.55 EUR
224+0.32 EUR
256+0.28 EUR
271+0.26 EUR
Mindestbestellmenge: 131
Im Einkaufswagen  Stück im Wert von  UAH
CY14MB064Q2A-SXQ download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; tube
Case: SOIC8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Frequency: 40MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14MB064Q2A-SXQT ?docID=46910
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Frequency: 40MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2407TRPBF irfr2407pbf.pdf
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S53R1ATMA1 IPZ40N04S53R1.pdf
IPZ40N04S53R1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5-5R4 IPZ40N04S5-5R4.pdf
IPZ40N04S5-5R4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 23nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5-8R4 IPZ40N04S5-8R4.pdf
IPZ40N04S5-8R4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 13.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-2R8 IPZ40N04S5L-2R8.pdf
IPZ40N04S5L-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Gate charge: 52nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-4R8 IPZ40N04S5L-4R8.pdf
IPZ40N04S5L-4R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-7R4 IPZ40N04S5L-7R4.pdf
IPZ40N04S5L-7R4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 17nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5303WE6327HTSA1 Infineon-BBY53SERIES-DS-v01_01-en.pdf
BBY5303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Case: SOD323
Capacitance: 1.85...5.8pF
Max. off-state voltage: 6V
Load current: 20mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BB439E6327HTSA1 BB439-DTE.pdf
BB439E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 28V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Case: SOD323
Capacitance: 5.1...53pF
Max. off-state voltage: 28V
Load current: 20mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 6V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY6602VH6327XTSA1 bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Max. off-state voltage: 12V
Load current: 50mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Mounting: SMD
Case: SC79
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT165N08S5N029ATMA2 IAUT165N08S5N029.pdf
IAUT165N08S5N029ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Mounting: SMD
Case: PG-HSOF-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICL5101XUMA1 ICL5101-DTE.pdf
ICL5101XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6232GPAUMA2 TLE6232GP.pdf
TLE6232GPAUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Turn-off time: 10µs
Output current: 0.55...1.1A
Number of channels: 6
Turn-on time: 10µs
Technology: FLEX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6251-2G TLE6251-2G.pdf
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
421+0.17 EUR
537+0.13 EUR
767+0.09 EUR
1374+0.05 EUR
1450+0.05 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP024N06N3GXKSA1 IPP024N06N3G-DTE.pdf
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.74 EUR
13+5.79 EUR
18+4.03 EUR
19+3.80 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPI024N06N3GXKSA1 IPI024N06N3G-DTE.pdf
IPI024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR13N15DTRPBF irfr13n15dpbf.pdf
IRFR13N15DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 14A
Power dissipation: 86W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFNR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFNR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BAI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BAI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2453 2454 2455 2456 2457 2458 2459 2460 2461 2462 2463 2470 2477  [ Nächste Seite >> ]