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IRF7805TRPBF IRF7805TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AAB9AF9695F1A303005056AB0C4F&compId=irf7805pbf.pdf?ci_sign=443ae672556fdca4e15edb1e1122c36e4d066fc1 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AAD84A1F7EF1A303005056AB0C4F&compId=irf7805zpbf.pdf?ci_sign=477441440a9e246de6443801c45f03308c5647d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF3808PBF IRF3808PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AE8F1A6F5005056AB5A8F&compId=irf3808.pdf?ci_sign=9b75e9d1b7ae4216cd6e064857a08cfc6f4e1820 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 150nC
auf Bestellung 862 Stücke:
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20+3.66 EUR
51+1.42 EUR
54+1.34 EUR
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IRF3808STRLPBF IRF3808STRLPBF INFINEON TECHNOLOGIES irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 508 Stücke:
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18+4.20 EUR
43+1.69 EUR
45+1.60 EUR
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BTS5215L BTS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987CBDA9CF8469&compId=BTS5215L.pdf?ci_sign=d07d7e318e650d9718d976f18de6af9dbefa4b2e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
auf Bestellung 147 Stücke:
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13+5.91 EUR
26+2.83 EUR
27+2.67 EUR
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IRF2805PBF IRF2805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABA8F1A6F5005056AB5A8F&compId=irf2805.pdf?ci_sign=75f46d0371246f527250018376170da7c42dbc3a description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
On-state resistance: 4.7mΩ
Gate-source voltage: ±20V
auf Bestellung 781 Stücke:
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44+1.63 EUR
49+1.47 EUR
55+1.30 EUR
64+1.13 EUR
68+1.06 EUR
Mindestbestellmenge: 44
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IRF2805STRLPBF IRF2805STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F9415D53DF1A303005056AB0C4F&compId=irf2805spbf.pdf?ci_sign=de92fdc8f6ae8f1bc7e2c301ba6d3231b8470cbf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB7A0F9993D820&compId=IGB50N65H5.pdf?ci_sign=c80c470858009409ab30cbd2d7519e5c0d06a463 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 26ns
Turn-off time: 147ns
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB81BC395BB820&compId=IGB50N65S5.pdf?ci_sign=0778718709225d6346585e04ae937444174763cc Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 199ns
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IGW50N65F5FKSA1 IGW50N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BAFB0E0EF0AE2A18&compId=IGW50N65F5.pdf?ci_sign=58957c2cf056abb404f562d57cb4dd27fa5e9e23 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
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IGW50N65H5FKSA1 IGW50N65H5FKSA1 INFINEON TECHNOLOGIES DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IGZ50N65H5XKSA1 IGZ50N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6D68D8FA90A18&compId=IGZ50N65H5.pdf?ci_sign=96a64ded9d76f49e106ee56fcc6bd28a53b58942 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 27ns
Turn-off time: 271ns
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.06 EUR
14+5.35 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
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IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF29AD2429DB820&compId=IKW50N65EH5.pdf?ci_sign=543bacaa290afb265262e30a541ac32eec8829b1 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
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IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2A0C69FC8B820&compId=IKW50N65ES5.pdf?ci_sign=37d8685f6023c7efb5ad42c81aa82f3ae004e6ee Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Produkt ist nicht verfügbar
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C32ED04EF1CC&compId=IKW50N65F5-DTE.pdf?ci_sign=bba1665e443f317af0d8789097c07047bfdea290 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.71 EUR
19+3.78 EUR
21+3.56 EUR
Mindestbestellmenge: 10
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IKW50N65H5FKSA1 IKW50N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B905150E9D8FA8&compId=IKW50N65H5FKSA1-DTE.pdf?ci_sign=7f10bd8bc8b551f0edda00af4f15d07c1c38118b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.01 EUR
18+4.09 EUR
19+3.86 EUR
60+3.72 EUR
Mindestbestellmenge: 11
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IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2C6F50809D820&compId=IKW50N65WR5.pdf?ci_sign=8c4c9b0d0d9ac5f3cfcced20f163a629fe87121b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.99 EUR
12+6.29 EUR
15+4.82 EUR
16+4.55 EUR
Mindestbestellmenge: 11
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5B41609FDF3D7&compId=IKZ50N65ES5.pdf?ci_sign=164ad88ab6dd00700ae40f6b09533ca8d88ec35b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
Produkt ist nicht verfügbar
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IKZ50N65NH5XKSA1 IKZ50N65NH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C72DD820EC4A18&compId=IKZ50N65NH5.pdf?ci_sign=e634198c5e8edd6d50febfc52496a0b32b6a9135 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
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BTS3410GXUMA1 BTS3410GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8F98EFB4E259&compId=BTS3410G.pdf?ci_sign=ddc0179d6d16bdce0acde891ec45a1db5ab766cf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
On-state resistance: 0.2Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.8W
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8
auf Bestellung 2491 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.35 EUR
33+2.19 EUR
53+1.37 EUR
55+1.30 EUR
1000+1.26 EUR
Mindestbestellmenge: 22
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IRLR3705ZTRPBF IRLR3705ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF120FD286C55EA&compId=IRLR3705ZTRPBF.pdf?ci_sign=35ad5f87f1b8ef08e2a63ecd16eb41e8ada71222 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
43+1.67 EUR
58+1.24 EUR
61+1.17 EUR
500+1.13 EUR
Mindestbestellmenge: 37
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BTS3408GXUMA2 BTS3408GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799BFFC16F7AF0749&compId=BTS3408G.pdf?ci_sign=4799b98e7393b94cd3de40caf24b56a0f30f968a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Output voltage: 60V
Output current: 0.55A
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 2
Technology: HITFET®
Kind of integrated circuit: low-side
Supply voltage: 4.5...60V DC
On-state resistance: 0.48Ω
Turn-on time: 2µs
Turn-off time: 2µs
Kind of output: N-Channel
Power dissipation: 0.88W
auf Bestellung 1856 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
32+2.26 EUR
34+2.14 EUR
100+2.06 EUR
Mindestbestellmenge: 21
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IRLR2703TRPBF INFINEON TECHNOLOGIES irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Pulsed drain current: 96A
Produkt ist nicht verfügbar
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IRLR2705TRLPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRLR2705TRPBF IRLR2705TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E605A45B0F1A303005056AB0C4F&compId=irlr2705pbf.pdf?ci_sign=b6baeb06276ab86ae10757cd8e517e59dd6be110 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
105+0.69 EUR
132+0.54 EUR
250+0.29 EUR
265+0.27 EUR
Mindestbestellmenge: 74
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227EB606ADACF1A303005056AB0C4F&compId=irlr3103pbf.pdf?ci_sign=3cef654ee8f937478c9dc59895a9dc4f14faaa1c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227ED532A6AAF1A303005056AB0C4F&compId=irlr3105pbf.pdf?ci_sign=27e86e922a975b9332692ad13636276895f80f4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 411ns
Technology: TRENCHSTOP™
auf Bestellung 31 Stücke:
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13+5.78 EUR
18+4.13 EUR
19+3.90 EUR
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IR2113PBF IR2113PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3412F1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=247116e3d5b7bad6858a091480152cfde4abe4bd description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 100 Stücke:
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29+2.52 EUR
31+2.37 EUR
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IRLML9301TRPBF IRLML9301TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C86AD25A8F1A303005056AB0C4F&compId=irlml9301pbf.pdf?ci_sign=cff5d3a9e1fb1b7e0e7544975a7831b46000b145 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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129+0.56 EUR
205+0.35 EUR
285+0.25 EUR
329+0.22 EUR
658+0.11 EUR
695+0.10 EUR
Mindestbestellmenge: 129
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SMBT2222AE6327HTSA1 SMBT2222AE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7FFBA97A00469&compId=SMBT2222AE6327.pdf?ci_sign=e947f7e7ed39cabf58351392c21760d8d29d3c84 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Produkt ist nicht verfügbar
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E7B9E48F611C&compId=BSC040N10NS5-DTE.pdf?ci_sign=1afe5a86553b823be907139a75c36c5eed705e55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA51E41005A11C&compId=BSZ440N10NS3G-DTE.pdf?ci_sign=346209358a53e8d09666903e8b3a2cdcaef96bb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
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39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
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IAUZ40N10S5L120ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 35Ω
Contacts configuration: SPST-NO
Max. operating current: 200mA
Mounting: SMT
Relay variant: MOSFET
Control current: 3...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
13+5.51 EUR
14+5.21 EUR
100+5.00 EUR
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Mounting: SMD
Turn-on time: 675ns
Turn-off time: 475ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 600V
Power: 1.6W
Supply voltage: 10...20V DC
auf Bestellung 17 Stücke:
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10+7.81 EUR
12+6.03 EUR
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IPB64N25S320ATMA1 INFINEON TECHNOLOGIES Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E713E691CF1A6F5005056AB5A8F&compId=irfr5505.pdf?ci_sign=0982e56101b1ec4bf1fddcac02efbe5c3bbd2ff6 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3559 Stücke:
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48+1.52 EUR
67+1.08 EUR
174+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 48
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Mounting: SMD
Turn-on time: 0.4µs
Turn-off time: 380ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 600V
Power: 1.6W
Supply voltage: 10...20V DC
auf Bestellung 9 Stücke:
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7+11.47 EUR
9+7.95 EUR
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IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
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2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5C2CA4584F10B&compId=2N7002H6327XTSA2.pdf?ci_sign=329548fe42e8d9dcb0858f8ddae70fe1ac08d7bb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
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562+0.13 EUR
719+0.10 EUR
851+0.08 EUR
1007+0.07 EUR
1337+0.05 EUR
1413+0.05 EUR
Mindestbestellmenge: 374
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
auf Bestellung 370 Stücke:
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46+1.56 EUR
63+1.14 EUR
66+1.09 EUR
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 282 Stücke:
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26+2.85 EUR
60+1.20 EUR
64+1.13 EUR
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF149F8AD1575EA&compId=IRS44273LTRPBF.pdf?ci_sign=0811e9e8216aae8fdb7f04e8f1b695bc97deadfd Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Case: SOT23-5
Mounting: SMD
Topology: single transistor
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 9.2...20V DC
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
auf Bestellung 2196 Stücke:
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72+1.00 EUR
80+0.90 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 72
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IRS21814SPBF IRS21814SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D3FF1A6F5005056AB5A8F&compId=irs2181.pdf?ci_sign=6993d3a766a3465e140bc82188cb2503d6b7f53b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.26 EUR
20+3.60 EUR
Mindestbestellmenge: 17
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IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES irf7456pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.65 EUR
26+2.79 EUR
28+2.65 EUR
100+2.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 9717 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
350+0.20 EUR
540+0.13 EUR
937+0.08 EUR
993+0.07 EUR
9000+0.07 EUR
Mindestbestellmenge: 264
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IRF7805TRPBF description pVersion=0046&contRep=ZT&docId=E221AAB9AF9695F1A303005056AB0C4F&compId=irf7805pbf.pdf?ci_sign=443ae672556fdca4e15edb1e1122c36e4d066fc1
IRF7805TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805ZTRPBF pVersion=0046&contRep=ZT&docId=E221AAD84A1F7EF1A303005056AB0C4F&compId=irf7805zpbf.pdf?ci_sign=477441440a9e246de6443801c45f03308c5647d7
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3808PBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AE8F1A6F5005056AB5A8F&compId=irf3808.pdf?ci_sign=9b75e9d1b7ae4216cd6e064857a08cfc6f4e1820
IRF3808PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 150nC
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF3808STRLPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.20 EUR
43+1.69 EUR
45+1.60 EUR
Mindestbestellmenge: 18
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BTS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987CBDA9CF8469&compId=BTS5215L.pdf?ci_sign=d07d7e318e650d9718d976f18de6af9dbefa4b2e
BTS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.91 EUR
26+2.83 EUR
27+2.67 EUR
Mindestbestellmenge: 13
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IRF2805PBF description pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABA8F1A6F5005056AB5A8F&compId=irf2805.pdf?ci_sign=75f46d0371246f527250018376170da7c42dbc3a
IRF2805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
On-state resistance: 4.7mΩ
Gate-source voltage: ±20V
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
55+1.30 EUR
64+1.13 EUR
68+1.06 EUR
Mindestbestellmenge: 44
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IRF2805STRLPBF pVersion=0046&contRep=ZT&docId=E21F5F9415D53DF1A303005056AB0C4F&compId=irf2805spbf.pdf?ci_sign=de92fdc8f6ae8f1bc7e2c301ba6d3231b8470cbf
IRF2805STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGB50N65H5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB7A0F9993D820&compId=IGB50N65H5.pdf?ci_sign=c80c470858009409ab30cbd2d7519e5c0d06a463
IGB50N65H5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 26ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
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IGB50N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB81BC395BB820&compId=IGB50N65S5.pdf?ci_sign=0778718709225d6346585e04ae937444174763cc
IGB50N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 199ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BAFB0E0EF0AE2A18&compId=IGW50N65F5.pdf?ci_sign=58957c2cf056abb404f562d57cb4dd27fa5e9e23
IGW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IGW50N65H5FKSA1 DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25
IGW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IGZ50N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6D68D8FA90A18&compId=IGZ50N65H5.pdf?ci_sign=96a64ded9d76f49e106ee56fcc6bd28a53b58942
IGZ50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 27ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IHW50N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
14+5.35 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65EH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF29AD2429DB820&compId=IKW50N65EH5.pdf?ci_sign=543bacaa290afb265262e30a541ac32eec8829b1
IKW50N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
Produkt ist nicht verfügbar
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IKW50N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2A0C69FC8B820&compId=IKW50N65ES5.pdf?ci_sign=37d8685f6023c7efb5ad42c81aa82f3ae004e6ee
IKW50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C32ED04EF1CC&compId=IKW50N65F5-DTE.pdf?ci_sign=bba1665e443f317af0d8789097c07047bfdea290
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.71 EUR
19+3.78 EUR
21+3.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B905150E9D8FA8&compId=IKW50N65H5FKSA1-DTE.pdf?ci_sign=7f10bd8bc8b551f0edda00af4f15d07c1c38118b
IKW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.01 EUR
18+4.09 EUR
19+3.86 EUR
60+3.72 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2C6F50809D820&compId=IKW50N65WR5.pdf?ci_sign=8c4c9b0d0d9ac5f3cfcced20f163a629fe87121b
IKW50N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.99 EUR
12+6.29 EUR
15+4.82 EUR
16+4.55 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKZ50N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5B41609FDF3D7&compId=IKZ50N65ES5.pdf?ci_sign=164ad88ab6dd00700ae40f6b09533ca8d88ec35b
IKZ50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ50N65NH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C72DD820EC4A18&compId=IKZ50N65NH5.pdf?ci_sign=e634198c5e8edd6d50febfc52496a0b32b6a9135
IKZ50N65NH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
Produkt ist nicht verfügbar
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BTS3410GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8F98EFB4E259&compId=BTS3410G.pdf?ci_sign=ddc0179d6d16bdce0acde891ec45a1db5ab766cf
BTS3410GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
On-state resistance: 0.2Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.8W
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8
auf Bestellung 2491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
33+2.19 EUR
53+1.37 EUR
55+1.30 EUR
1000+1.26 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3705ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF120FD286C55EA&compId=IRLR3705ZTRPBF.pdf?ci_sign=35ad5f87f1b8ef08e2a63ecd16eb41e8ada71222
IRLR3705ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
43+1.67 EUR
58+1.24 EUR
61+1.17 EUR
500+1.13 EUR
Mindestbestellmenge: 37
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BTS3408GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE799BFFC16F7AF0749&compId=BTS3408G.pdf?ci_sign=4799b98e7393b94cd3de40caf24b56a0f30f968a
BTS3408GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Output voltage: 60V
Output current: 0.55A
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 2
Technology: HITFET®
Kind of integrated circuit: low-side
Supply voltage: 4.5...60V DC
On-state resistance: 0.48Ω
Turn-on time: 2µs
Turn-off time: 2µs
Kind of output: N-Channel
Power dissipation: 0.88W
auf Bestellung 1856 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
32+2.26 EUR
34+2.14 EUR
100+2.06 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2703TRPBF irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Pulsed drain current: 96A
Produkt ist nicht verfügbar
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IRLR2705TRLPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRPBF pVersion=0046&contRep=ZT&docId=E2227E605A45B0F1A303005056AB0C4F&compId=irlr2705pbf.pdf?ci_sign=b6baeb06276ab86ae10757cd8e517e59dd6be110
IRLR2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
105+0.69 EUR
132+0.54 EUR
250+0.29 EUR
265+0.27 EUR
Mindestbestellmenge: 74
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IRLR3103TRPBF pVersion=0046&contRep=ZT&docId=E2227EB606ADACF1A303005056AB0C4F&compId=irlr3103pbf.pdf?ci_sign=3cef654ee8f937478c9dc59895a9dc4f14faaa1c
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3105TRPBF pVersion=0046&contRep=ZT&docId=E2227ED532A6AAF1A303005056AB0C4F&compId=irlr3105pbf.pdf?ci_sign=27e86e922a975b9332692ad13636276895f80f4c
IRLR3105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRLR3114ZTRPBF pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IHW30N160R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 411ns
Technology: TRENCHSTOP™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.78 EUR
18+4.13 EUR
19+3.90 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IR2113PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3412F1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=247116e3d5b7bad6858a091480152cfde4abe4bd
IR2113PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRLML9301TRPBF pVersion=0046&contRep=ZT&docId=E2227C86AD25A8F1A303005056AB0C4F&compId=irlml9301pbf.pdf?ci_sign=cff5d3a9e1fb1b7e0e7544975a7831b46000b145
IRLML9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
205+0.35 EUR
285+0.25 EUR
329+0.22 EUR
658+0.11 EUR
695+0.10 EUR
Mindestbestellmenge: 129
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SMBT2222AE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7FFBA97A00469&compId=SMBT2222AE6327.pdf?ci_sign=e947f7e7ed39cabf58351392c21760d8d29d3c84
SMBT2222AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E7B9E48F611C&compId=BSC040N10NS5-DTE.pdf?ci_sign=1afe5a86553b823be907139a75c36c5eed705e55
BSC040N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA51E41005A11C&compId=BSZ440N10NS3G-DTE.pdf?ci_sign=346209358a53e8d09666903e8b3a2cdcaef96bb8
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT412LSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 35Ω
Contacts configuration: SPST-NO
Max. operating current: 200mA
Mounting: SMT
Relay variant: MOSFET
Control current: 3...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
13+5.51 EUR
14+5.21 EUR
100+5.00 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2132SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Mounting: SMD
Turn-on time: 675ns
Turn-off time: 475ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 600V
Power: 1.6W
Supply voltage: 10...20V DC
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.81 EUR
12+6.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPB64N25S320ATMA1 Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5505TRPBF description pVersion=0046&contRep=ZT&docId=E1C04E713E691CF1A6F5005056AB5A8F&compId=irfr5505.pdf?ci_sign=0982e56101b1ec4bf1fddcac02efbe5c3bbd2ff6
IRFR5505TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3559 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
67+1.08 EUR
174+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2136SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Mounting: SMD
Turn-on time: 0.4µs
Turn-off time: 380ns
Number of channels: 6
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 600V
Power: 1.6W
Supply voltage: 10...20V DC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
9+7.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2136STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5C2CA4584F10B&compId=2N7002H6327XTSA2.pdf?ci_sign=329548fe42e8d9dcb0858f8ddae70fe1ac08d7bb
2N7002H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 7524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
374+0.19 EUR
562+0.13 EUR
719+0.10 EUR
851+0.08 EUR
1007+0.07 EUR
1337+0.05 EUR
1413+0.05 EUR
Mindestbestellmenge: 374
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AUIRGP35B60PD pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
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IRF1405PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
46+1.56 EUR
63+1.14 EUR
66+1.09 EUR
Mindestbestellmenge: 24
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IRF1405STRLPBF pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1405ZPBF pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
60+1.20 EUR
64+1.13 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRS44273LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF149F8AD1575EA&compId=IRS44273LTRPBF.pdf?ci_sign=0811e9e8216aae8fdb7f04e8f1b695bc97deadfd
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Case: SOT23-5
Mounting: SMD
Topology: single transistor
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 9.2...20V DC
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
auf Bestellung 2196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
80+0.90 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
IRS21814SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D3FF1A6F5005056AB5A8F&compId=irs2181.pdf?ci_sign=6993d3a766a3465e140bc82188cb2503d6b7f53b
IRS21814SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
20+3.60 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRF7456TRPBF irf7456pbf.pdf
IRF7456TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4115PBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.65 EUR
26+2.79 EUR
28+2.65 EUR
100+2.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
BCV47E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 9717 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
350+0.20 EUR
540+0.13 EUR
937+0.08 EUR
993+0.07 EUR
9000+0.07 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
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